Relevant bibliographies by topics / Zirconia-hafnia system

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Zirconia-hafnia system'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Zirconia-hafnia system"

1

Wang, Chong, Matvei Zinkevich, and Fritz Aldinger. "The Zirconia?Hafnia System: DTA Measurements and Thermodynamic Calculations." Journal of the American Ceramic Society 89, no. 12 (2006): 3751–58. http://dx.doi.org/10.1111/j.1551-2916.2006.01286.x.

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Wang, Chong, Matvei Zinkevich, and Fritz Aldinger. ""The Zirconia?Hafnia System: DTA Measurements and Thermodynamic Calculations"." Journal of the American Ceramic Society 90, no. 6 (2007): 1963. http://dx.doi.org/10.1111/j.1551-2916.2007.01719.x.

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3

TRUBELJA, MLADEN F., and VLADIMIR S. STUBICAN. "Phase Equilibria and Ordering in the System Zirconia-Hafnia-Yttria." Journal of the American Ceramic Society 71, no. 8 (1988): 662–66. http://dx.doi.org/10.1111/j.1151-2916.1988.tb06385.x.

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4

Nakamura, Akio, Nobuyuki Masaki, Haruyoshi Otobe, Yukio Hinatsu, Junhu Wang, and Masuo Takeda. "Defect-fluorite oxides M1-yLnyO2-y/2(Ln = lanthanide; M = Hf, Zr, Ce, U, Th): Structure, property, and applications." Pure and Applied Chemistry 79, no. 10 (2007): 1691–729. http://dx.doi.org/10.1351/pac200779101691.

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An up-to-date summary of our coupled macroscopic (lattice parameter, a0) and microscopic (Mössbauer) studies on the entitled systems is given, shedding new light on the basic phase and structure properties of these technologically important, highly defective oxides. Through these studies, the intermediate-pyrochlore (P)-based local structure nature of the so-called stabilized-zirconia (SZ)- and stabilized-hafnia (SH)-type defect-fluorite (DF) phases in the M4+ = Zr and Hf systems seems to be almost unambiguously established with different (from the conventional) approaches: These are (1) the presence of a broad lattice parameter (a0) hump over the extended stabilized cubic DF region (y = ~0.3-~0.7); (2) the microscopic 151Eu-Mössbauer evidence of Eu3+ isomer shifts (ISs) showing characteristic V-shaped minima around the ideal-P area (y ~ 0.50) for both the M4+ = Zr and Hf systems; and (3) rich 155Gd-Mössbauer data on the Zr1-yGdyO2-y/2 system [IS, quadrupole splitting (QS), line width, peak height, and relative absorption area (RAA)], revealing detailed features of its ordered P-disordered DF phase and structure relationships. These results are discussed with reported basic-property data of these systems.
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Armelao, L., H. Bertagnolli, D. Bleiner, et al. "Highly Dispersed Mixed Zirconia and Hafnia Nanoparticles in a Silica Matrix: First Example of a ZrO2 -HfO2 -SiO2 Ternary Oxide System." Advanced Functional Materials 17, no. 10 (2007): 1671–81. http://dx.doi.org/10.1002/adfm.200600458.

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Ushakov, S. V., A. Navrotsky, Y. Yang, et al. "Crystallization in hafnia- and zirconia-based systems." physica status solidi (b) 241, no. 10 (2004): 2268–78. http://dx.doi.org/10.1002/pssb.200404935.

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7

Toy, C., and E. Savrun. "Novel composites in the aluminum nitride-zirconia and —hafnia systems." Journal of the European Ceramic Society 18, no. 1 (1998): 23–29. http://dx.doi.org/10.1016/s0955-2219(97)00104-0.

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TOY, C., and E. SAVRUN. "ChemInform Abstract: Novel Composites in the Aluminum Nitride-Zirconia and -Hafnia Systems." ChemInform 29, no. 14 (2010): no. http://dx.doi.org/10.1002/chin.199814216.

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Andrievskaya, E. R. "Phase equilibria in the refractory oxide systems of zirconia, hafnia and yttria with rare-earth oxides." Journal of the European Ceramic Society 28, no. 12 (2008): 2363–88. http://dx.doi.org/10.1016/j.jeurceramsoc.2008.01.009.

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Chen, Weiqun, Theresa A. Lee, and Alexandra Navrotsky. "Enthalpy of Formation of Yttria-Doped Ceria." Journal of Materials Research 20, no. 1 (2005): 144–50. http://dx.doi.org/10.1557/jmr.2005.0017.

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Solid solutions (1 − x)CeO2 − xYO1.5 (0 ≤ x ≤ 0.36) were prepared by coprecipitation and sol-gel methods. Their enthalpy of formation relative to the end-members, fluorite-type cubic CeO2 and C-type YO1.5 was determined by oxide melt solution calorimetry. The enthalpy of drop solution shows a roughly linear trend with composition. Extrapolation to x = 1 gives the transition enthalpy of C-type to cubic fluorite YO1.5 as 22.2 ± 6.7 kJ/mol. This linear behavior is in contrast to the strong curvature seen in the ZrO2 − YO1.5 and HfO2 − YO1.5 systems. The slightly positive enthalpy of formation of CeO2 − YO1.5 is strikingly different from the strongly negative enthalpies of formation of ZrO2 − YO1.5 and HfO2 − YO1.5. The thermodynamics of CeO2 − YO1.5 is analyzed in terms of defect association and oxygen vacancy distribution. Specifically, the association of oxygen vacancies with the tetravalent cations in the zirconia and hafnia systems, in contrast to the preference of vacancies for nearest neighbor yttrium sites in the ceria systems, may explain the different energetics.
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Dissertations / Theses on the topic "Zirconia-hafnia system"

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Mojaki, Emela Anna. "Study of the zirconia-hafnia system and particularly its behaviour at high temperatures and high pressure." Thesis, 2011. http://hdl.handle.net/10539/10530.

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Conference papers on the topic "Zirconia-hafnia system"

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Hsu, Tzu-Yao, Bo-Ting Lin, Jay Shieh, and Miin-Jang Chen. "The Ferroelectricity and Crystallinity of Zirconia, Hafnia and Hafnium Zirconium Oxide (HZO) Ultrathin Films Prepared by Atomic Layer Deposition With and Without Post-Annealing." In ASME 2018 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/smasis2018-7946.

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Large stable ferroelectricity in hafnium zirconium oxide (HZO) solid solution ultrathin films (including pure zirconia (ZrO2) and hafnia (HfO2)) and ZrO2/HfO2 bilayer ultrathin films of thickness ranging from 5–12 nm, prepared by thermal atomic layer deposition or remote plasma atomic layer deposition (RP-ALD) has been demonstrated. Ferroelectric crystallization of the ZrO2 ultrathin film with high-pressure orthorhombic (o) space group Pbc21 could be achieved without post-annealing due to the plasma-induced thermal stresses experienced by the film during the RP-ALD process. In contrast, for the ZrO2/HfO2 bilayer ultrathin film, due to the high crystallization temperature of HfO2, post-annealing was needed to achieve sufficient confinement of the sandwiched HfO2 layer by the ZrO2 top layer and Si bottom substrate to promote the high-pressure ferroelectric o-phase in HfO2. The ferroelectric properties of the HZO ultrathin films prepared by RP-ALD were highly dependent on the Hf-to-Zr ratio — an increasing amount of HfO2 has been found to be detrimental to the ferroelectricity, mainly due to the high crystallization temperature of HfO2. Without post-annealing, the ferroelectricity of the HZO ultrathin films was governed by the relative amounts of the amorphous phase and the ferroelectric o-phase induced by the plasma treatment. While with post-annealing, the ferroelectricity was governed by the relative amounts of the ferroelectric o-phase and the non-ferroelectric monoclinic (m) phase.
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