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Dissertations / Theses on the topic 'Zn-doped'

Author: Grafiati
Published: 5 June 2025
Last updated: 2 August 2025

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1

雷美琪 and Mei-ki Pattie Lui. "Positron lifetime study of Zn-doped GaSb." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2001. http://hub.hku.hk/bib/B31226437.

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Lui, Mei-ki Pattie. "Positron lifetime study of Zn-doped GaSb /." Hong Kong : University of Hong Kong, 2001. http://sunzi.lib.hku.hk/hkuto/record.jsp?B24534328.

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3

Ulm, Eric R. "Penetration Depth Studies in Ni and Zn Doped YBa2Cu3O7-8 /." The Ohio State University, 1995. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487929230739462.

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4

Rajagopal, Raghu Raman. "Preparation and characterisation of bioglasses doped with Sr and Zn." Master's thesis, Universidade de Aveiro, 2011. http://hdl.handle.net/10773/3844.

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Mestrado em Ciência e Engenharia dos Materiais<br>Os vidros e vitro-cerâmicos do sistema ternário diopsite (CaO·MgO·2SiO2; posteriormente mencionado como Di) – fluorapatite (9CaO·3P2O5·CaF2; posteriormente mencionado como FA) e fosfato tricálcico (3CaO·P2O5; posteriormente mencionado como TCP) são potenciais candidatos para várias aplicações biomédicas incluindo estruturas de suporte para engenharia de tecido ósseo. O presente trabalho teve como objectivo investigar os vidros e os vitrocerâmicos do sistema Di-FA-TCP quanto à sua estrutura e capacidades de formação, sinterização e crist
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Jiang, Lulu. "Catalytic Performance and Characterization of Zn-doped Cryptomelane-type Manganese Dioxide For Ethanol Oxidation." Miami University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=miami1352827354.

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6

Lam, Chi-hung. "Positron annihilation spectroscopy studies of 6H N-type silicon carbide and Zn-doped P-type gallium antimonide." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B36299996.

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7

Lam, Chi-hung, and 林志雄. "Positron annihilation spectroscopy studies of 6H N-type silicon carbide and Zn-doped P-type gallium antimonide." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B36299996.

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8

Rancati, Andrea. "Ab initio simulations of topological phase transitions in Dirac semimetal Cd3As2 doped with Zn and Mn impurities." Thesis, Linnéuniversitetet, Institutionen för fysik och elektroteknik (IFE), 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-80767.

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In this work we exploit the unique characteristics of a Dirac semimetal material to be symmetry-protected, to investigate dierent topological phase transitions provided by chemical dopings, focusing in particular on the electronic, magnetic and topological properties of the doped systems, studied by the mean of rst-principles methods based on density functional theory (DFT) approach. In particular these doped systems, besides being of interest for investigating the role of topology in solid state physics, could have a great potential for practical application since the dierent topological phas
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9

Galiyeva, Perizat. "Doped Ag-In-Zn-S and Ag-In-Ga-Zn-S QDs : synthesis and potential as dual-modality probes for magnetic resonance and fluorescence imaging of cells." Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0118.

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L’imagerie par fluorescence (IF) et l’imagerie de résonance magnétique (IRM) comptent parmi les outils de diagnostic les plus efficaces. Dans ce contexte, des QDs possédant à la fois des propriétés fluorescentes et magnétiques sont d’un grand intérêt en tant que sondes bimodales. Dans ce travail, des QDs Ag-In-Zn-S (AIZS) et Ag-In-Ga-Zn-S (AIGZS) ont été préparés et dopés afin de développer de nouvelles sondes de sondes bimodales pour l’IF et l’IRM. Des QDs AIZS très fluorescents ont été préparés en milieu organique à l’aide de DDT et d’OAm comme ligands. Les QDs Mn:AIZS possèdent des propriét
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10

Li, Yuanjie. "Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn,Mg)O by pulsed laser deposition." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013815.

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11

Knapp, Alexander Gerhard [Verfasser], and J. [Gutachter] Geurts. "Resonant Spin Flip Raman-Spectroscopy of Electrons and Manganese-Ions in the n-doped Diluted Magnetic Semiconductor (Zn,Mn)Se:Cl / Alexander Gerhard Knapp ; Gutachter: J. Geurts." Würzburg : Universität Würzburg, 2019. http://d-nb.info/1193927218/34.

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12

Song, Young Wook. "Photoluminescence of InN with Mg and Zn Dopants." Thesis, University of Canterbury. Physics and Astronomy, 2008. http://hdl.handle.net/10092/1638.

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The optical properties of Mg-doped InN thin films grown on YSZ substrates have been investigated by photoluminescence (PL). A series of InN:Mg samples with various Mg cell temperatures (TMg) were produced by molecular beam epitaxy. The effect of Mg concentration on PL emission properties have been explored by various excitation power and temperature dependent measurements. The PL spectra as a function of excitation power exhibited a pronounce blueshift, indicating prominent band filling caused by the Burstein-Moss effect. Meanwhile, a typical redshift was observed as temperature increased due
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13

CORDEIRO, MOACIR R. "Investigação de interações hiperfinas em Zn(1-x)MT(x)O, onde MT=(V, Cr, Mn, Fe, Co, Ni, Cu) pela técnica de correlação angular gama-gama perturbada." reponame:Repositório Institucional do IPEN, 2012. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10073.

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Made available in DSpace on 2014-10-09T12:34:26Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:09:48Z (GMT). No. of bitstreams: 0<br>Tese (Doutoramento)<br>IPEN/T<br>Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP
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Li, Guan-Zhang, and 李冠璋. "Processing and Property Characterization of Zn-Doped GaN and Zn-Doped InGaN Thin Films Prepared by Reactive Sputtering." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/4e7xur.

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碩士<br>國立臺灣科技大學<br>材料科學與工程系<br>104<br>In this research, we successfully deposited p-type Zn-doped GaN and InGaN (Zn-GaN and Zn-InGaN) films by RF sputtering with single cermet targets. The targets were made by hot pressing the powder mixture of metallic Ga, Zn, and In and ceramic GaN. In addition, we had added Zn into the GaN and InGaN cermet targets and successfully deposited p-type GaN and InGaN films by RF sputtering. All the thin films were analysised by EDS, SEM, AFM, XRD, Hall Effect measurement, and UV. This study was divided into four parts. The first part is about Zn-x GaN films (x = 0
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15

Chen, Szu-i., and 陳思宜. "Synthesis and applications of Zn-doped CuO nanowires." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/51526415963827106250.

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碩士<br>國立臺南大學<br>電機工程研究所<br>99<br>In this thesis, Zn-doped CuO nanowires were synthesized by thermal oxidation of sputtered two-layer metal thin film(Cu and Zn). The electrical properties, field-emission properties and humidity sensing properties of Zn-doped CuO nanowires were followed measured. The analysis equipments we used in this research include：Scanning Electron Microscopy－for surface morphology analysis of nanowires；Energy Dispersive X-ray Spectroscopy－for composition and quantitative elemental analysis of nanowires；X-Ray Diffraction－for crystal structure and composition analysis of nan
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16

Chiachi, Lee, and 李佳倛. "Substitution Mechanism Study of Zn-doped Lithium Niobate Crystals." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/33015647302774041064.

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17

Huang, Chi-Hsuan, and 黃伎玄. "The Study of Zn doped CuInSe2 P-N junction." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/11311730903679525783.

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碩士<br>國立高雄第一科技大學<br>光電工程研究所<br>98<br>In this study, we use two methods to grows CuInSe2: Zn p-n homojunction thin film solar cell. In the caseA, we first fabricated co-sputter Cu、In and Zn precursor layers and then use selenization method to form ultimate CuInSe2:Zn absorbent layer. The Zn diffusion depth is controlled by sputtering power of Zn and Zn target shutter open time. In the caseB, we first fabricated co-sputter Cu and In precursor layer and then use selenization method to form CuInSe2 absorbent layer. Next step, we use sputter Zn on the surface of CuInSe2 thin films and then use anne
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18

Wu, Sheng-jie, and 巫勝傑. "A Study of Annealing Effect of Zn-doped ZnO." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/60931419952738785148.

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碩士<br>國立成功大學<br>物理學系碩博士班<br>97<br>In our study, pure, 2% and 5% zinc-doped zinc oxide (ZnO:Zn) thin films were deposited on silicon substrates by RF magnetron co-sputtering method under argon. Samples were annealed under air, nitrogen and oxygen atmospheres at annealing temperature ranging from 500 to 900℃. The influence of ZnO structural crystallinity for annealing temperature and ambient were analyzed by room temperature photoluminescence (RTPL) measurement. The PL spectrum in the visible light region was used to analyze defects of samples in variation of different annealing temperature and
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19

Tseng, Po-Kai, and 曾柏凱. "The study of Zn doped CuInSe2 thin film by selenization of co-sputtering Cu-In-Zn alloy." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/85187467571340669107.

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碩士<br>國立高雄第一科技大學<br>光電工程研究所<br>97<br>Chalcopyrite-structure Cu(In,Ga)Se2 (CIGS) alloys are the most promising materials for use as a low cost and high efficiency absorber layer. The highest efficiencies of 19.9% for thin-film Cu(In,Ga)Se2 (CIGS) solar cells have been faricated by the multi-source elemental co-evaporation process.A CdS buffer layer deposited by chemical bath deposition (CBD) method has long been used for CIGS cells, because the CdS layer plays important role in forming a pn-homojunction in the CIGS surface layer resulted from Cd diffusion. The use of CdS involves handling prob
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20

pei-chang, Tsai, and 蔡沛昌. "Study of defect structure of highly Zn doped LiNbO3 single crystal." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/13496088580135550195.

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博士<br>國立臺灣師範大學<br>物理學系<br>97<br>In order to determine the defect structure of ZnO-doped LiNbO3 single crystals, EXAFS, FTIR, Proton Exchange, Thermal Effect, and Coercive Field experiments were used to target this subject. The calculation of hybrid density functional theory OH─ absorption mode and IFEFFIT EXAFS analysis fitting were also included. From the Extended X-ray Absorption Fine Structure (EXAFS) measurement at room temperature, we find that there is no obvious difference between Zn and Nb core in EXAFS spectra, implying that doped Zn atom is substituted directly on the Li site of LiNb
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21

Juang, Fung Lung, та 莊豐隆. "Mechanisms of the depression of critical temperature in Zn-doped YBa2Cu3O7-δ". Thesis, 1995. http://ndltd.ncl.edu.tw/handle/84420464872565544841.

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碩士<br>國立中山大學<br>物理研究所<br>83<br>In this thesis we synthesize RBa2(Cu1-xZnx)3O7-δ(R=Y,Gd,Eu) systems by means of X-ray diffraction,electrical resistivity and heat-capacity measurements.From these data analysis,We hope to more clearly understand the meachanisms of the depression of critical temperature in Zn-doped YBa2Cu3O7-δ. The main results are as follows:1.All the RBa2(Cu1-xZnx)3O7-δ samples retain the orthorhombic structure in the range of Zn substitution.2. The suppression of the superco
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22

Yang, Chun-Chao, and 楊淳超. "Preparation of different Cr/Cu ratios and Zn doped CuCrO2 thin films." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/89093613265220677204.

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碩士<br>國立高雄應用科技大學<br>化學工程與材料工程系<br>99<br>In this study, the influence of different Cr/Cu ratios and Zn-doped in CuCrO2 films on the microstructure and optoelectronic properties of the thin films were examined. When Cr/Cu ratio was greater than 0.8, the single CuCrO2 phase was obtained. Whereas Cr/Cu ratio was less than 0.7, CuO+CuCrO2 phases were found. The optical transmittance and optical bandgap were increasingly with Cr/Cu ratios decreasing. The optical transmittance was increasingly from 45% (Cr/Cu=1) to 62% (Cr/Cu=0.8) meanwhile the optical bandgap was enhanced from 2.93 eV (Cr/Cu=1) to 3
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23

Wang, Chun-Yu, and 王鈞右. "Preparation and characterization of Zn-doped Li2FeSiO4 cathode material for lithium ion batteries." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/09178892205454712559.

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碩士<br>大同大學<br>材料工程學系(所)<br>101<br>In this study, Li2Fe1-xZnxSiO4 (0 ≤ x ≤ 0.07) cathode materials are synthesized by a sol-gel method. The crystal structure, carbon contents, and morphologies of as-prepared powders are investigated with XRD, EA, and SEM, respectively. The electrochemical properties of Li2Fe1-xZnxSiO4 (0 ≤ x ≤ 0.07) cathode materials are examined by assembling these materials into coin-type cells with home-made battery tester by cycling it between 1.5 and 4.6 V (vs. Li/Li+) at 0.1, 0.2, 0.5, and 1C-rates. The XRD results reveal that monoclinic (or orthorhombic) Li2FeSiO4 is exc
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24

Lin, Chun-Hsing, and 林俊興. "Thermal stability of Zn-doped ITO films prepared by rf magnetron cosputtering system." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/mn56ym.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>94<br>Indium zinc oxide (IZO) thin films at various atomic ratios [Zn / (Zn + In) at.%] were prepared by rf cosputtering system at room temperature using indium tin oxide (ITO) and zinc oxide (ZnO) targets. The thermal stability of ITO and cosputtered films annealed under reducing atmosphere (forming gas 95% Ar + 5% H2) oxygen, and atmosphere ambient were investigated. The film resistivity of ITO and IZO films at lower atomic ratios was drastically increased at an annealing temperature of 700℃. The appearance of the metal-like In phase was responsible for the si
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25

Chuang, Hung-Yi, and 莊鴻億. "A study of Zn and In oxided film gas sensor doped with precious metal." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/30271326288521191610.

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碩士<br>國立成功大學<br>化學工程學系碩博士班<br>90<br>Abstract The gas sensors consist of a thin film deposited on an electrical insulated substrate, which is sensitive to some gases. Because of the interaction of adsorbed gas with sensor, the sensor electrical properties change, and the change can be detected. In the study, the ZnO and In2O3 thin films doped with precious metal were prepared by vacuum deposition of a thin film of zinc and indium on Al2O3 substrate followed with thermal annealing and oxidation. The sensitivity, response time, and recovery time for ethanol and CO were measured and the surface m
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26

Yang, Kai-Chun, and 楊凱鈞. "Photoelectrochemical performance of Zn-doped n-type CuInS2 thin film prepared by spray pyrolysis method." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/81122088556971001614.

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碩士<br>國立中央大學<br>化學工程與材料工程學系<br>105<br>n-type CuInS2 thin films were fabricated with different [Cu]/[In] ratio in precursor by spray pyrolysis method on a transparent indium-doped tin oxide (ITO) substrate followed by calcination in the Ar at 500 oC. Further we investigated the structural and optical properties of Zn-doped n-type CuInS2. As the XRD patterns, shows the chalcopyrite CuInS2 structure with the increase of the amount of Cu, the higher the crystallinity of CuInS2. The optical study show the absorption coefficient (α) in the UV-visible region is found to be in the order of 104~105 cm-
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27

Yu, Ya Chien, and 游雅茜. "Photoelectrochemical Study of Cu doped Zn-In-S Thin Film Electrodes Using Chemical Bath Deposition." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/59561433914195307876.

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碩士<br>長庚大學<br>化工與材料工程學系<br>98<br>In this study, Cu-doped Zn-In-S thin films were grown on fluorine-doped tin oxide (FTO) coated glass substrates using chemical bath deposition method. The effect of [Cu]/[Zn] molar ratio in solution bath on the structure, morphology, optical, and electrical properties of samples was investigated. X-ray Diffraction (XRD) patterns of the samples show that the thin films prepared in this study are cubic spinel phase. Field-emission scanning electron microscope (FE-SEM) images shows that the microstructures of deposited films change from microspheres with numerous
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28

WU, JYH-Ming, and 吳志明. "Studay on Low Temperature Sinter Bi-Zn-Nb Series Microwave Dielectric Ceramics Doped with V2O5." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/32962058081435568509.

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Tung, Cheng-Wei, and 董承瑋. "Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/14973821867573283320.

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碩士<br>國立中山大學<br>材料與光電科學學系研究所<br>99<br>In this thesis, the resistance switching characteristic of Zn:SiO2 -based memory was studied. The resistive memory was fabricated by sputtering to deposit the Metal/Insulator/Metal (MIM) structure. The top and bottom layers were made by Pt and TiN respectively, and the insulator was Zn:SiO2 grown by co-sputtering with SiO2 and Zinc. We found that doping Zinc into SiO2 insulator induced the resistive switching characteristic. By the treatment of supercritical carbon dioxide (SCCO2) in Zn:SiO2 -based device,the operation current would decrease. In the result
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Chen, Hung-Chang, and 陳宏昌. "Growth and Characteristics of Zn-doped InN Alloys on Sapphire by RF Reactive Magnetron Sputtering." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/jbmjvv.

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碩士<br>國立臺北科技大學<br>光電工程系所<br>93<br>This dissertation investigates the growth and characteristics of Zn-doped Indium nitride alloys on (0001) Sapphire substrate by RF reactive magnetron sputtering. By changing the deposition conditions such as chamber pressure, nitrogen flow rate and RF power, we found that at 500°C of substrate temperature, chamber pressure 3m Torr, N2 flow rate 9 sccm and RF power under 50W, we obtained the main orientation of InN (0002) thin film and a better electric conduction quality of zinc-doped Indium Nitride material; Hall mobility of 14.6cm2/V-s, 5.6e20cm-3 carrier co
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31

Su, Hui-Yi, and 蘇慧儀. "Phase diagrams of ternary Zn-Sb-In systems and thermoelectric properties of In doped Zn4Sb3." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/dwqv7p.

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碩士<br>國立中山大學<br>材料與光電科學學系研究所<br>106<br>In cope with the environmental protection and energy sustainability, the development of thermoelectric (TE) materials and devices has grown enormously in the recent decade. The p-type β-Zn4Sb3 attracts great attention in the application of mid-temperature TE generator, due to the fact that the β-Zn4Sb3 comprises the cost-effective, non-toxic and earth-abundant elements. The indium acts as effective dopant and substituted in β-Zn4Sb3, and the TE transport properties of In-doped Zn4Sb3 are evaluated systematically, with respect to the varying In ratios and
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32

Hsin, Hsu Mao, and 許懋勳. "Study on Superconductors Pr2-xCexCu1-yMyO4(X=0.13~0.17;M=Zn,Ni) for Electron-Doped Effect." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/56714964299002794602.

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碩士<br>南台科技大學<br>電機工程系<br>93<br>From the results of low temperature specific heat), p-type 214 superconductor shows a d-wave behavior (C(T)=A/T2+γT+αT2+βT3). However, n-type 214 superconductor is not clear. Therefore we are strong interesting in investigating the electronic transportation mechanism of Pr2-xCexCu1-yMyO4 by doping magnetic and nonmagnetic atoms, and also comparing with p-type Pr2-xCexCu1-yMyO4. In this thesis, we synthesis Pr2-xCexCu1-yMyO4(M=Zn、Ni，x=0.13、0.14、0.15、0.16、0.17，y=0、0.0025、0.005、0.0075、0.01) electronic superconductors using Solid State Reaction method and investigate
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Huang, Jie-Ling, and 黃潔翎. "Synthesis of Au catalysts modified Zn-doped SnO2 nanorod clusters for low-temperature gas sensing applications." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/07551184599041142205.

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碩士<br>國立交通大學<br>材料科學與工程學系所<br>102<br>In the thesis, we mainly described the synthesis of novel Zn-doped SnO2 nanostructures, the surface decoration with tiny Au nanoparticles (NPs), and the CO gas sensing applications. With precisely controlled hydrothermal processes and unique Au decoration techniques, a series of highly CO-sensitive catalytic Au NPs decorated Zn-doped SnO2 nanorod clusters were successfully synthesized. Regarding the structural design and syntheis, doping of Zn into the SnO2 lattices is evidenced as a workable strategy not only for optimizing the CO sensitivity from the view
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Lin, Li-Yu, and 林麗玉. "Chemical Synthesis, Characterization and Luminescent Properties of Pristine and Doped ZnS and (Zn,Cd)S Nanoparticles." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/14416301711017582068.

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碩士<br>國立交通大學<br>應用化學系<br>88<br>This research is attempted to investigate the effect of host composition, synthetic temperature and synthetic methodology on the luminescent properties for two series of prestine and doped ZnS and (Zn,Cd)S phosphor nanoparticles. Nanoparticles of ZnS and (Zn,Cd)S have been synthesized via solid state, chemical colloid and solvothermal routes, respectively. X-ray diffraction, photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) were utilized in the characterization of phase purity and microstructure of phosphor nanoparticles.
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Weng, Jia-Yen, and 翁嘉言. "Research of Mn and Zn doped Cadmium Sulfide/Zinc Sulfide Core-Shellnanoparticls in Reverse Micellar Method." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/k6uc2z.

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碩士<br>國立臺北科技大學<br>材料及資源工程系所<br>94<br>ZnS-coated CdS:Mn and ZnS-coated CdS:Zn core/shells structured nanocrystals are synthesized via a reversed micelle process. The optimum luminance intensity can be obtained in 2 mol% Mn-doped CdS/ZnS and the emission wavelength exhibits blue-shifted. The emission wavelength decreases with the increase with the concentration of Zn in CdS:Zn/ZnS. The crystal structures are identified by using XRD. The distribution of the size is from 10 nm to 100 nm. From TEM, the nanoparticle size is about 20 nm.
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Jen, I.-Lun, and 任毅倫. "Phase diagram of ternary Zn-Sb-Ga system and Thermoelectric properties of Ga doped Zn4Sb3 alloys." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/5wu289.

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碩士<br>國立中山大學<br>材料與光電科學學系研究所<br>107<br>In order to cope with the global warming and energy sustainability, the development of thermoelectric (TE) materials has grown extremely in recent years. The p-type β-Zn4Sb3 attracts great attention in the application of middle temperature thermoelectric generators.The addition of Gallium (Ga) in the Zn4Sb3 leads to the power factor (PF) increasing with two times in selective Ga-doped Zn4Sb3 which is grown crystal by the Bridgman method. At 623 K, the maximum solubility of Gallium in Zn4Sb3 under the thermally equilibrium state is less than 4 at.%Ga, as s
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Wu, Yeng-Ting, and 吳彥廷. "The study of preparation and photoelectrical properties of chemical bath deposited Zn, Sb, Ni-doped CuInS2 films." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/r7wtxr.

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碩士<br>國立臺北科技大學<br>化學工程研究所<br>99<br>Zn, Sb, Ni-Doped CuInS2 semiconductor films were fabricated on indium- tin–oxide (ITO) substrates by chemical bath deposition. The chemical composition, morphology, crystalline, and optical properties of the Zn, Sb, Ni-doped CuInS2 films were characterized by SEM, XRD, UV-Vis and α–step. Additionally, the carrier density and flat band potential of the semiconductor electrodes were measured by Hall and Potentiostat. Results show that the electrical property of the films was changed from n-type to p-type semiconductors, when doped with various amounts of Zn or
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38

Wang, Shiu-wen, and 王脩文. "STUDIES ON THE PHOTOLUMINESCENCE BEHAVIOR OF THE MN AND SM DOPED ZN-SI-B-O GLASS-CERAMICS." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/02331187686663558604.

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碩士<br>大同大學<br>材料工程學系(所)<br>97<br>The experiment is used the zinc nitrate and the tetraethyl orthosilicate and the boric acid for the reatant.Under the different kind of temperature, and doped manganese and Samarium, the reation is used the sol-gel method of synthesis zinc and silica and boric and oxygen, the discussion under the different crystal phase the influence of the reation temperature and the dopping elements. The main content is choose different catalyst and heat treatment condition , and study the influence of its formation to fluorescent powder and luminescence characteristic, and w
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39

Chou, Cheng Hsueh, and 周承學. "The studies of photocatalytic degradation of Toluene vapor with B-Zn co-doped TiO2 in packed bed reactor." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/2vrk3r.

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碩士<br>長庚大學<br>化工與材料工程學系<br>104<br>In this study, the photocatalysts is prepared by commercial titanium dioxide (P25) co-doped with of Boron, Zinc ions. Photocatalyst was coated on the glass beads by impregnation method. The powder characteristics were analyzed by UV-vis, XRD, PL, SEM. The removal efficiency were discussed on different initial concentrations, relative humidities. The kinetic parameters of photocatalytic decomposition of toluene vapor in our study follows the Langumuir-Hinshelwood (L-H) model. The modified photocatalyst powder 0.05%B/0.05%Zn/P25 has the best photodegradation
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Knapp, Alexander Gerhard. "Resonant Spin Flip Raman-Spectroscopy of Electrons and Manganese-Ions in the n-doped Diluted Magnetic Semiconductor (Zn,Mn)Se:Cl." Doctoral thesis, 2019. https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-186099.

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Main focus of the present dissertation was to gain new insight about the interaction between magnetic ions and the conduction band of diluted magnetic semiconductors. This interaction in magnetic semiconductors with carrier concentrations near the metal-insulator transition (MIT) in an external magnetic field is barely researched. Hence, n-doped Zn1−xMnxSe:Cl samples were studied. Resonant Raman spectroscopy was employed at an external magnetic field between 1T and 7T and a temperature of 1.5K. The resulting magnetization of the material amplifies the splitting of states with opposite spins bo
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41

RezaRooydell and 雷光夏. "Zn-containing Hybrid Metal Organic Precursores and Derived Doped ZnO Nanostructures: Synthesis Properties and Application in Gas Sensing and Photocatalyst." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/272n8t.

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博士<br>國立成功大學<br>材料科學及工程學系<br>105<br>A series of Metal Organic precursors (MOPs) were synthesized, structure determination found out metal-ligand complex follows our proposal. The main objective of this study was to synthesize and characterize precursors that are capable of producing zinc/copper precursors with varity ratio of zinc/copper, the researcher studied Cu doped ZnO via these precursors by thin films and chemical vapor deposition (CVD). Metal Organic Precursors (MOPs) are often volatile enough to be useful as precursors of the metals in vapor phase deposition process, e.g. chemical va
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42

Chien-JuiLo and 羅建睿. "Fabrication of Co-based metal-organic frameworks/ N-doped reduced graphene oxide nanocomposites as bifunctional electrocatalysts for Zn-air batteries." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/cxkg4p.

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43

Kim, Taeyang. "Effect of Synthesis Condition and Annealing on the Sensitivity and Stability of Gas Sensors Made of Zn-Doped y-Fe2O3 Particles." 2009. http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-852.

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In this study, the effect of synthesis conditions and annealing process on the sensitivity and stability of gas sensors made of flame-synthesized Zn-doped γ-Fe2O3 particles was investigated. Zn-doped γ-Fe2O3 particles were synthesized by flame spray pyrolysis using either H2/Air or H2/O2 coflow diffusion flames. The particles were then annealed at 325~350˚C in a tube furnace under air atmosphere. Both as-synthesized and annealed particles were used as gas sensing materials to construct gas sensors. Transmission electron microscopy (TEM), X-ray diffraction (XRD), Brunauer-Emmett-Teller surface
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44

Sun, Jiansheng. "Electron paramagnetic resonance studies of single crystals of Mn -doped (NH ) SO , Gd -doped NH Pr(SO ) .4H O,VO -doped M(NH ) (SO ) .6H O (M = Cd, Co, Fe, Mg, Zn) and Mg(ND ) (SO ) .6D O, and Cu -doped MNa (SO ) .4H O (M = Co, Mg)." Thesis, 1991. http://spectrum.library.concordia.ca/5894/1/NN64658.pdf.

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45

Chetty, Raju. "Thermoelectric Propeties of Cu Based Chalcogenide Compounds." Thesis, 2014. http://etd.iisc.ac.in/handle/2005/2912.

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Thermoelectric (TE) materials directly convert heat energy into electrical energy. The conversion efficiency of the TE devices depends on the performance of the materials. The conversion efficiency of available thermoelectric materials and devices is low. Therefore, the development of new materials for improving thermoelectric device performance is a highly essential. As the performance of the TE materials depends on TE figure of merit [zT=S2P T ] which consist of three material properties such as Seebeck coefficient (S), electrical resistivity ( ) and thermal conductivity ( ). Thermoelectric
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46

Chetty, Raju. "Thermoelectric Propeties of Cu Based Chalcogenide Compounds." Thesis, 2014. http://hdl.handle.net/2005/2912.

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Thermoelectric (TE) materials directly convert heat energy into electrical energy. The conversion efficiency of the TE devices depends on the performance of the materials. The conversion efficiency of available thermoelectric materials and devices is low. Therefore, the development of new materials for improving thermoelectric device performance is a highly essential. As the performance of the TE materials depends on TE figure of merit [zT=S2P T ] which consist of three material properties such as Seebeck coefficient (S), electrical resistivity ( ) and thermal conductivity ( ). Thermoelectric
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