Academic literature on the topic 'Zn2GeO4'

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Journal articles on the topic "Zn2GeO4"

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Wang, Zhou, Zhiting Tang, Xueling Peng, Chuanhui Xia, and Feng Wang. "New viewpoint about the persistent luminescence mechanism of Mn2+/Eu3+ co-doped Zn2GeO4." International Journal of Modern Physics B 33, no. 32 (December 30, 2019): 1950389. http://dx.doi.org/10.1142/s0217979219503892.

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In this work, Mn[Formula: see text]Eu[Formula: see text] co-doped Zn2GeO4 (Zn2GeO4:Mn[Formula: see text] was prepared by high-temperature solid phase method. Compared with common fluorescent materials Zn2GeO4:Mn[Formula: see text], Zn2GeO4:Mn[Formula: see text] could not only emit strong green fluorescence of 535 nm, but also maintain excellent persistent luminescence performance. Through Density Functional Theory calculation, we obtained the fine band structure of Zn2GeO4:Mn[Formula: see text]. The results of the band structure were consistent with the experimental spectral data. On this basis, we proposed a new luminescence mechanism model of Zn2GeO4:Mn[Formula: see text] to explain the phenomena observed in experiment reasonably, though which was not completely consistent with previous works. When Zn2GeO4:Mn[Formula: see text] was excited, electron–hole separation occurred in the valence band (VB), and the electron transitioned to the conduction band (CB) directly. Through CB, the electron was trapped by trap levels (7F[Formula: see text]F5 of Eu[Formula: see text] and maintained metastable for a long time. Under the action of thermal stimulation, electron returned to CB from the trap level slowly. The electron was captured again by the 4T2(D) level of Mn[Formula: see text]. Then the electron transitioned down toward VB and recombined with the previous hole and emitted a photon with 535 nm (afterglow). The samples were being irradiated, trap levels accommodated the excited electrons to saturation. More electrons excited into the CB could not be captured by the trap levels any more. They were captured directly by the 4T2(D) and transitioned directly to VB, then emitted green fluorescence.
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TAKAHASHI, YOSHIHIRO, MASATAKA ANDO, RIE IHARA, TAKUMI FUJIWARA, and MINORU OSADA. "NANOCRYSTALLIZATION AND OPTICAL PROPERTY OF WILLEMITE-TYPE SEMICONDUCTIVE Zn2GeO4 IN GLASS." Functional Materials Letters 05, no. 02 (June 2012): 1260008. http://dx.doi.org/10.1142/s1793604712600089.

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A wide band-gap semiconductive oxide Zn2GeO4 has recently attracted considerable interest because it is a multifunctional material; excellent photoluminescent (PL) and photocatalytic property, high-capacity anode for lithium batteries, and so on. Recently, present authors' group have fabricated transparent Zn2GeO4 -nanocrystallized glass from a lithium zincogermanate glass. This article briefly describes a series of our studies on the nanocrystallized glass. Particularly, the phase-formation dynamics in supercooled-liquid phase and PL property of nanocrystallized glasses are presented.
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Li, Hong, Yinhai Wang, Lei Li, Haiju Huang, Hui Zhao, and Zhengfa Hu. "Enhanced photocatalytic activity and persistent luminescence in Zn2GeO4:Mn2+ by Eu3+ doping." Modern Physics Letters B 30, no. 27 (October 10, 2016): 1650305. http://dx.doi.org/10.1142/s021798491650305x.

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Zn2GeO4:Mn[Formula: see text],[Formula: see text]Eu[Formula: see text] and Zn2GeO4:Mn[Formula: see text] powders were synthesized by a high-temperature solid-state reaction. X-ray powder diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize the structures and morphologies of the synthesized powders, respectively. The photocatalytic properties and long persistent luminescence performance were improved by Eu[Formula: see text] doping. Thermoluminescent (TL) curves showed that the trap concentration in the material was increased with Eu[Formula: see text] doping, which formed trap centers in Zn2GeO4:Mn[Formula: see text]. The trap centers can capture the electrons or holes and subsequently increase the separation of photogenerated electrons and holes by suppressing the recombination of captured electrons and holes; thus, resulting in an improved photocatalytic activity and a prolonged persistent luminescence. The present strategy may be used as a general method to improve the photocatalytic activity and persistent luminescence.
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Xia, Chuanhui, Mu Zhou, Miao He, Liu Yang, Miao Liu, Ping Zhou, Hang Chen, and Feng Wang. "Experimental and theoretical studies on luminescent mechanisms and different visual color of the mixed system composed of MgGeO3:Mn, Eu and Zn2GeO4:Mn." International Journal of Modern Physics B 34, no. 25 (September 8, 2020): 2050216. http://dx.doi.org/10.1142/s0217979220502161.

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In this work, the mixed system composed of Zn2GeO4: Mn and MgGeO3: Mn, Eu was synthesized by the high temperature solid phase method. Under the external excitation, visual color of samples was yellow. However, after the excitation was completed, visual color turned to be red. From luminescence spectrum, it was found that Zn2GeO4: Mn emitted green fluorescence of 534 nm under the excitation of 375 nm light. At the same time, MgGeO3: Mn, Eu emitted both fluorescence and persistent luminescence (PersL) of 668 nm. Moreover, the properties of PersL present samples were superior to other red PersL materials. Fine band structures from density functional theory (DFT) indicated that there were different luminescent mechanisms of Zn2GeO4: Mn and MgGeO3: Mn, Eu. When Zn2GeO4: Mn was excited, electron transitioned from VB to CB directly. Through CB, the electron was captured by the 4T2(D) of Mn ion, then the electron jumped from 4T2(D) to VB and recombined at once with the previous hole and emitted a 534 nm photon. When MgGeO3: Mn, Eu was excited, electron transitioned from 6A1(S) of Mn ion to CB and left a hole. Through CB, electron was captured by 7F6 levels of Eu[Formula: see text] and remained metastable for a long time, which slowed down the recombined rate between electron and hole. Under thermal stimulation, the captured electron returned to CB from 7F6 levels and was recaptured by the 4T2(D) of Mn. The electron transitioned down toward 6A1(S) and recombined with the hole immediately, then emitted a photon with 668 nm.
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Hou, Zhenfei, Xiaoli Zou, Xipeng Pu, Lei Wang, and Yanling Geng. "Facile synthesis and improved photocatalytic H2 production of ZnO/Zn2GeO4 and ZnO/Zn2GeO4-Cu composites." Journal of Solid State Chemistry 296 (April 2021): 121965. http://dx.doi.org/10.1016/j.jssc.2021.121965.

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Gu, Zhanjun, Feng Liu, Xufan Li, and Zheng Wei Pan. "Luminescent Zn2GeO4 nanorod arrays and nanowires." Physical Chemistry Chemical Physics 15, no. 20 (2013): 7488. http://dx.doi.org/10.1039/c3cp43977a.

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Cao, B., J. Chen, and W. Zhou. "Controlled Growth of Zn2GeO4/ZnO Heterojunction Nanowires." Microscopy and Microanalysis 17, S2 (July 2011): 1926–27. http://dx.doi.org/10.1017/s1431927611010506.

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Liu, Li, Weiliu Fan, Xian Zhao, Honggang Sun, Pan Li, and Liming Sun. "Surface Dependence of CO2 Adsorption on Zn2GeO4." Langmuir 28, no. 28 (June 29, 2012): 10415–24. http://dx.doi.org/10.1021/la301679h.

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Hidalgo, Pedro, Alejandro López, Bianchi Méndez, and Javier Piqueras. "Synthesis and optical properties of Zn2GeO4 microrods." Acta Materialia 104 (February 2016): 84–90. http://dx.doi.org/10.1016/j.actamat.2015.11.023.

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Gu, Zhanjun, Feng Liu, Xufan Li, and Zheng Wei Pan. "Luminescent GeO2–Zn2GeO4 hybrid one dimensional nanostructures." CrystEngComm 15, no. 15 (2013): 2904. http://dx.doi.org/10.1039/c3ce26809h.

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Dissertations / Theses on the topic "Zn2GeO4"

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Ahmed, Mustafa M. Abdalla. "Alternating-Current Thin-Film Electroluminescent Device Characterization." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233432.

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Jádrem této disertační práce bylo studovat optické a elektrické charakteristiky tenkovrstvých elektroluminiscenčních součástek řízených střídavým proudem (ACTFEL) a zejména vliv procesu stárnutí luminiforů na jejich optické a elektrické vlastnosti. Cílem této studie měl být příspěvek ke zvýšení celkové účinnosti luminoforů, vyjádřené pomocí jasu, účinnosti a stability. Vzhledem k tomu, že současnou dominantní technologií plochých obrazovek je LCD, musí se další alternativní technologie plošných displejů porovnávat s LCD. Výhodou ACTFEL displejů proti LCD je lepší rozlišení, větší teplotní rozsah činnosti, větší čtecí úhel, či možnost čtení při mnohem vyšší intenzitě pozadí. Na druhou stranu je jejich nevýhodou vyšší energetická náročnost, problém s odpovídající barevností tří základních barev a podstatně vyšší napětí nutné pro činnost displeje. K dosažení tohoto cíle jsme provedli optická, elektrická a optoelektrická měření ACTFEL struktur a ZnS:Mn luminoforů. Navíc jsme studovali vliv dotování vrstvy pomocí KCl na chování mikrostruktury a na elektroluminiscenční vlastnosti (zejména na jas a světelnou účinnost) ZnS:Mn luminoforů. Provedli jsme i některá, ne zcela obvyklá, měření ACTFEL součástek. Vypočítali jsme i rozptylový poměr nabitých barevných center a simulovali transportní charakteristiky v ACTFEL součástkách. Studovali jsme vliv stárnutí dvou typů ZnS:Mn luminoforů (s vrstvou napařenou či získanou pomocí epitaxe atomových vrstev) monitorováním závislostí svítivost-napětí (L-V), velikost vnitřního náboje - elektrické pole luminoforu (Q-Fp) a kapacitance-napětí (C-V) ve zvolených časových intervalech v průběhu stárnutí. Provedli jsme krátkodobá i dlouhodobá měření a pokusili jsme se i o vizualizaci struktury luminoforu se subvlnovým rozlišením pomocí optického rastrovacího mikroskopu pracujícího v blízkém poli (SNOM). Na praktickém případu zeleného Zn2GeO4:Mn (2% Mn) ACTFEL displeje, pracujícího při 50 Hz, jsme také studovali stabilitu svítivosti pomocí měření závislosti svítivosti na napětí (L-V) a světelné účinnosti na napětí (eta-V). Přitom byl zhodnocen význam těchto charakteristik. Nezanedbatelnou a neoddělitelnou součástí této práce je i její pedagogický aspekt. Předložený text by mohl být využit i jako učebnice pro studenty na mé univerzitě v Lybii.
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Liao, Chi-Hung, and 廖啟宏. "Single Crystalline Zn2GeO4 Nanowires and Their Optoelectronic Properties." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/29688589495796884825.

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碩士
國立交通大學
材料科學與工程學系所
101
In this work, Zn2GeO4 nanowires (NWs) have been successfully synthesized on Si (100) substrate through carbon thermal reduction and vapor-liquid-solid method. The diameters of the NWs are in the range of 80-150 nm with high aspect ratio (AR>100). The X-ray diffraction (XRD) peaks revealed that the phase is rhombohedral Zn2GeO4. High resolution transmission electron microscopy (HRTEM) indicated that the NWs are perfect single-crystalline with [110] growth direction. Moreover, the atomic resolution high-angle annular dark-field (HAADF) and bright field images of scanning transmission electron microscopy (STEM) can distinguish the different elements of atoms. They further clarified the structure of Zn2GeO4 and the position of elements located. The room temperature photoluminescence spectra of Zn2GeO4 NWs revealed high UV emission and broad blue emission. The UV emission was attributed to the Zinc interstitial, of which the intensity decreased as temperature increasing. Furthermore, we have fabricated the device to measure electrical properties of the single NW. The platinum electrodes of the device were deposited by focus ion beam (FIB). It is remarkable that individual Zn2GeO4 NW device exhibited excellent optoelectronic property with fast switching speed under 254 nm UV illuminations. The result showed that Zn2GeO4 NWs can be served as the building blocks for UV photodetectors. In addition, while exposing Zn2GeO4 NWs, which soaking in methyl orange solution. With short wavelength UV illumination, the methyl orange were degraded. This result showed that Zn2GeO4 NWs can be used in degrading organic pollutants. In conclusion, Zn2GeO4 NWs show highly potential applications in UV photodetectors and degradation of organic pollutants.
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Hung, Chih-Cheng, and 洪智晟. "Growth of porous ZnO and Zn2GeO4 nanowires by thermal evaporation." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/15713848272101020808.

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碩士
國立成功大學
材料科學及工程學系碩博士班
97
The growth of porous ZnO nanowires (NWs) by thermal oxidation of ZnS NWs in air and by the Ag catalyst via thermal evaporation of ZnS powder in Ar, respectively, was studied. The ZnS NWs were first synthesized by thermal evaporation of ZnS powder at 1100℃ in Ar. On subsequent annealing in air, the ZnS NWs transformed to porous ZnS-ZnO core-shell NWs and porous ZnO NWs at 600-700℃ and 700-750℃, respectively. Higher annealing temperature or oxygen partial pressure suppressed the formation of porous ZnO NWs. On Ag-coated Si substrates, porous ZnO NWs could directly grow at 750-800℃ by thermal evaporation of ZnS powder at 1100℃ in Ar without subsequent annealing. Two factors, the higher formation rate for SO2 than for ZnO and the incompatible structure at the interface of epitaxial ZnS and ZnO, are beneficial to the formation of porous ZnS NWs from ZnS templates on annealing in air or by the Ag-catalytic growth in Air. The mechanisms for the formation of porous ZnO NWs by the two methods were explored, respectively. Another part of this study focused on the effects of oxygen partial pressure and a Cu layer on Si substrates on the growth of Zn2GeO4 NWs by thermal evaporation of ZnS and Ge powders at 1100˚C in Ar. The Zn2GeO4 NWs could grow on the bare Si substrates at 650-800˚C in Ar, while the deposited Cu layer further enhanced the growth of Zn2GeO4 NWs, forming the Cu-doped Zn2GeO4 NWs. The growth of Zn2GeO4NWs and Cu-doped Zn2GeO4 NWs followed the self-catalyzed vapor-liquid-solid (VLS) process. In Ar/O2(3%), GeO2 particles instead of Zn2GeO4 NWs formed on the Si substrates, revealing that higher oxygen partial pressure in Ar enhanced the growth of GeO2. The photoluminescence (PL) peak of Cu-doped Zn2GeO4 NWs showed a blue shift of about 15 nm as compared with that, 540 nm, of undoped Zn2GeO4 NWs.
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Lin, Tzu-Yin, and 林姿吟. "Solid-state reaction formation of ZnO-Zn2GeO4 heterostructures and its applications in sensing devices." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/04031823972757042716.

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碩士
國立臺灣海洋大學
材料工程研究所
103
Well-crystalline one-dimensional ZnO-Zn2GeO4 (ZGO) heterostructures were successfully synthesized using a high-temperature solid-state reaction between the ZnO and Ge layers of ZnO-Ge core-shell nanostructures. The polycrystalline ZGO crystallites had a thickness in the range of 17 to 26 nm. The high-temperature solid-state reaction induced grooves and crystal defects on the surfaces of the ZGO crystallites. The sensors made from the ZnO-ZGO heterostructures exhibited a marked photocurrent response to UV light at room temperature. For the gas sensing test, the ZnO-ZGO has a visible sensitivity to various reducing and oxidizing gases because of ZGO shell provides many efficient adsorption sites for gases. The observed sensing properties are attributed to the rugged surface of the ZGO heterointerfaces between ZnO and ZGO, surface crystal defects of ZGO, and cross-linked contact regions of ZnO-ZGO.
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Conference papers on the topic "Zn2GeO4"

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Hidalgo Alcalde, Pedro, Jaime José Dolado Fernández, and Bianchi Méndez. "Efficient white-light emission from Zn2GeO4 nanomaterials." In Oxide-based Materials and Devices X, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2019. http://dx.doi.org/10.1117/12.2511254.

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Wang, Wen-Jiu, Qi-Fan Wang, Shi-Zhao Kang, Xiang-Qing Li, Li-Xia Qin, and Jin Mu. "Controllable Preparation and Electrochemical Behavior of Nanostructured Zn2GeO4." In 2nd Annual International Conference on Advanced Material Engineering (AME 2016). Paris, France: Atlantis Press, 2016. http://dx.doi.org/10.2991/ame-16.2016.37.

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Prasanna, P. B. Lakshmi, P. Sai Raju, S. Kondal Rao, Sk Erfan, B. Subba Rao, and K. V. R. Murthy. "Synthesis & photoluminescence analysis of Eu3+activated Zn2GeO4 phosphor." In INTERNATIONAL CONFERENCE ON “MULTIDIMENSIONAL ROLE OF BASIC SCIENCE IN ADVANCED TECHNOLOGY” ICMBAT 2018. Author(s), 2019. http://dx.doi.org/10.1063/1.5100450.

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Wan, Lijuan, and Dongxiang Cheng. "Synthesis of Zn2GeO4 nanorods for efficient photocatalytic conversion of CO2." In MATHEMATICAL SCIENCES AND ITS APPLICATIONS. Author(s), 2017. http://dx.doi.org/10.1063/1.4971889.

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Wu, Chengguo, Suhong He, and Yanhua Huang. "First-principles calculations of optical properties of Zn2GeO4 under high pressures." In MATERIALS SCIENCE, ENERGY TECHNOLOGY AND POWER ENGINEERING II (MEP2018). Author(s), 2018. http://dx.doi.org/10.1063/1.5041105.

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Breternitz, Joachim, and Susan Schorr. "π- cubic SnS and spinel-type Zn2GeO4: Strategies for the bulk synthesis of metastable compounds for solar energy conversion." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8547709.

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