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Relevant bibliographies by topics / ZnGeP2

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Academic literature on the topic 'ZnGeP2'

Author: Grafiati

Published: 25 May 2024

Last updated: 31 July 2025

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Journal articles on the topic "ZnGeP2"

1

СЛЮНЬКО, Е. С., Н. Н. ЮДИН, В. М. КАЛЫГИНА, et al. "Effect of diffusion doping of ZnGeP2with Mg and Ca atoms on the optical properties of single crystals." Optika atmosfery i okeana 37, no. 4(423) (2024): 302–6. http://dx.doi.org/10.15372/aoo20240406.

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С целью увеличения оптической прочности нелинейного кристалла дифосфида цинка-германия (ZnGeP2) изучено влияние на порог оптического пробоя на длине волны 2091 нм примесных атомов Mg и Ca, введенных в кристаллическую решетку ZnGeP2. Примесь вводилась путем диффузионного легирования посредством напыления материала на подложку из ZnGeP2с последующим отжигом в вакууме при температуре 750 °C в течение 200 ч. Показано, что введение примесных атомов Mg в монокристалл приводит к увеличению порога оптического пробоя на 31%. При легировании ZnGeP2атомами Ca наблюдается противоположная тенденция. Выдвин

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Voevodin, Vladimir, Svetlana Bereznaya, Yury S. Sarkisov, Nikolay N. Yudin, and Sergey Yu Sarkisov. "Terahertz Generation by Optical Rectification of 780 nm Laser Pulses in Pure and Sc-Doped ZnGeP2 Crystals." Photonics 9, no. 11 (2022): 863. http://dx.doi.org/10.3390/photonics9110863.

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Terahertz wave generation through the optical rectification of 780 nm femtosecond laser pulses in ZnGeP2 crystals has been studied. All of the possible interactions of types I and II were analyzed by modeling and experimentally. We demonstrate the possibility of broadband “low-frequency” terahertz generation by an ee–e interaction (with two pumping waves and a generated terahertz wave; all of these had extraordinary polarization in the crystal) and “high-frequency” terahertz generation by an oe–e interaction. The arising possibility of achieving the narrowing of the terahertz generation bandwi

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3

Ning, Jing, Rong Dai, Qiao Wu, Lei Zhang, Tingting Shao, and Fuchun Zhang. "Density Functional Theory Study of Infrared Nonlinear Optical Crystal ZnGeP₂." Journal of Nanoelectronics and Optoelectronics 16, no. 10 (2021): 1544–53. http://dx.doi.org/10.1166/jno.2021.3110.

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The electronic structure and optical properties of ZnGeP2 crystal were studied using DFT. The electronic structure results showed that ZnGeP2 is a nonlinear optical crystal with a direct wide bandgap. The bandgap was calculated to be 1.99 eV using the HSE06 method, which is exactly equal to the experimental value. The optical properties showed strong absorption and reflection in the ultraviolet region and strong transmittance in the infrared region. The average static refractive index of ZnGeP2 was 2.73, and the static birefractive index was 0.04. The above results indicate that ZnGeP2 is a po

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Zhao, Xin, Shi Fu Zhu, and Yong Qiang Sun. "Growth of ZnGeP₂ Single Crystal by Three-Temperature-Zone Furnace." Advanced Materials Research 179-180 (January 2011): 945–48. http://dx.doi.org/10.4028/www.scientific.net/amr.179-180.945.

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In order to meet the requirements of growing high-quality ZnGeP2, a crystal growth furnace with three-temperature-zone was designed and fabricated based on a conventional vertical two-zone tubular resistance furnace. Appropriate temperature gradients of 12~15°C/cm at the growth interface and stable thermal profile were obtained. A crack-free ZnGeP2 single crystal with size of Φ15mm×30mm was grown successfully in the furnace mentioned above. The as-grown crystal was characterized by X-ray diffraction (XRD) and Infrared (IR) spectrophotometers. It is found that there is a cleavage face of (101)

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Yudin, Nikolay N., Andrei Khudoley, Mikhail Zinovev, et al. "Experimental Investigation of Laser Damage Limit for ZPG Infrared Single Crystal Using Deep Magnetorheological Polishing of Working Surfaces." Crystals 14, no. 1 (2023): 32. http://dx.doi.org/10.3390/cryst14010032.

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Zinc germanium phosphide (ZGP) crystals have garnered significant attention for their nonlinear properties, making them good candidates for powerful mid-IR optical parametric oscillators and second-harmonic generators. A ZnGeP2 single crystal was treated by deep magnetorheological processing (MRP) until an Angstrom level of roughness. The studies presented in this article are devoted to the experimental evaluation of the influence of deep removal (up to 150 μm) from the surface of a ZnGeP2 single crystal by magnetorheological polishing on the parameters of optical breakdown. It was shown that

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Pal, S., D. Sharma, M. Chandra, et al. "Thermodynamic properties of chalcogenide and pnictide ternary tetrahedral semiconductors." Chalcogenide Letters 21, no. 1 (2024): 1–9. http://dx.doi.org/10.15251/cl.2024.211.1.

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In this paper, we present thermodynamic properties such as heat of formation, heat of fusion and entropy of fusion for chalcopyrite structured solids with the product of ionic charges and nearest neighbour distance d (Å). The heat of formation (∆Hf) of these compounds exhibit a linear relationship when plotted on a log-log scale against the nearest neighbour distance d (Å), but fall on different straight lines according to the ionic charge product of the compounds. On the basis of this result two simple heat of formation (∆Hf)heat of fusion (∆HF), and heat of formation (∆Hf)entropy of fusion

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7

Yudin, Nikolai, Oleg Antipov, Ilya Eranov, et al. "Laser-Induced Damage Threshold of Single Crystal ZnGeP2 at 2.1 µm: The Effect of Crystal Lattice Quality at Various Pulse Widths and Repetition Rates." Crystals 12, no. 5 (2022): 652. http://dx.doi.org/10.3390/cryst12050652.

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The ZnGeP2 crystal is a material of choice for powerful mid-IR optical parametric oscillators and amplifiers. In this paper, we present the experimental analysis of the optical damage threshold of ZnGeP2 nonlinear crystals induced by a repetitively-pulsed Ho3+:YAG laser at 2091 nm. Two types of ZnGeP2 crystals grown under different conditions were examined using the laser and holographic techniques. The laser-induced damage threshold (LIDT) determined by the pulse fluence or peak intensity was studied as a function of the pulse repetition rate (PRR) and laser exposure duration. The main crysta

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Voevodin, Vladimir I., Valentin N. Brudnyi, Yury S. Sarkisov, Xinyang Su, and Sergey Yu Sarkisov. "Electrical Relaxation and Transport Properties of ZnGeP2 and 4H-SiC Crystals Measured with Terahertz Spectroscopy." Photonics 10, no. 7 (2023): 827. http://dx.doi.org/10.3390/photonics10070827.

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Terahertz photoconductivity and charge carrier recombination dynamics at two-photon (ZnGeP2) and three-photon (4H-SiC) excitation were studied. Thermally annealed, high-energy electron-irradiated and Sc-doped ZnGeP2 crystals were tested. The terahertz charge carrier mobilities were extracted from both the differential terahertz transmission at a specified photoexcitation condition and the Drude–Smith fitting of the photoconductivity spectra. The determined terahertz charge carrier mobility values are ~453 cm2/V·s for 4H-SiC and ~37 cm2/V·s for ZnGeP2 crystals. The charge carrier lifetimes and

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Yudin, Nikolai, Andrei Khudoley, Mikhail Zinoviev, et al. "The Influence of Angstrom-Scale Roughness on the Laser-Induced Damage Threshold of Single-Crystal ZnGeP2." Crystals 12, no. 1 (2022): 83. http://dx.doi.org/10.3390/cryst12010083.

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Magnetorheological processing was applied to polish the working surfaces of single-crystal ZnGeP2, in which a non-aqueous liquid with the magnetic particles of carbonyl iron with the addition of nanodiamonds was used. Samples of a single-crystal ZnGeP2 with an Angstrom level of surface roughness were received. The use of magnetorheological polish allowed the more accurate characterization of the possible structural defects that emerged on the surface of a single crystal and had a size of ~0.5–1.5 μm. The laser-induced damage threshold (LIDT) value at the indicated orders of magnitude of the su

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Yudin, Nikolay, Mikhail Zinoviev, Vladimir Kuznetsov, et al. "Effect of Dopants on Laser-Induced Damage Threshold of ZnGeP2." Crystals 13, no. 3 (2023): 440. http://dx.doi.org/10.3390/cryst13030440.

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The effect of doping Mg, Se, and Ca by diffusion into ZnGeP2 on the optical damage threshold at a wavelength of 2.1 μm has been studied. It has been shown that diffusion-doping with Mg and Se leads to an increase in the laser-induced damage threshold (LIDT) of a single crystal (monocrystal), ZnGeP2; upon annealing at a temperature of 750 °C, the damage threshold of samples doped with Mg and Se increases by 31% and 21% from 2.2 ± 0.1 J/cm2 to 2.9 ± 0.1 and 2.7 ± 0.1 J/cm2, respectively. When ZnGeP2 is doped with Ca, the opposite trend is observed. It has been suggested that the changes in the L

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Dissertations / Theses on the topic "ZnGeP2"

1

Cheng, Siqi [Verfasser]. "Multi-picosecond Ho:YLF-pumped supercontinuum generation and ZnGeP2-based optical parametric amplifiers in the fingerprint regime / Siqi Cheng." Hamburg : Staats- und Universitätsbibliothek Hamburg Carl von Ossietzky, 2020. http://d-nb.info/1229625518/34.

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Rame, Jérémy. "Recherche et élaboration de nouveaux matériaux pour les applications laser non-linéaires du moyen infrarouge." Electronic Thesis or Diss., Paris 6, 2014. http://www.theses.fr/2014PA066716.

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Le moyen infrarouge (MIR) présente un fort intérêt technologique du fait de la présence de bandes de transparence de l’atmosphère dans ce domaine. En effet, elles permettent d’envisager de nombreuses applications à longue distance, telles que la détection de gaz ou le brouillage infrarouge de missiles pour la sécurité des aéronefs civils ou militaires. Les sources paramétriques optiques font partie des technologies de choix pour la génération d’impulsions laser dans ce domaine. Elles nécessitent l’emploi de cristaux non-linéaires pour convertir des signaux laser, du proche infrarouge vers le M

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3

Blanton, Eric Williams. "Characterization and Control of ZnGeN2 Cation Lattice Ordering and a Thermodynamic Model for ZnGeN2-ZnSnN2 Alloy Growth." Case Western Reserve University School of Graduate Studies / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=case1448295996.

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Bekele, Challa Megenassa. "SYNTHESIS AND CHARACTERIZATION OF GaN AND ZnGeN2." Case Western Reserve University School of Graduate Studies / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=case1165271807.

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Beddelem, Nicole. "Croissance et caractérisation de nitrures ZnGeN2 pour applications optoélectroniques." Thesis, Université de Lorraine, 2019. http://www.theses.fr/2019LORR0029/document.

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Les nitrures d'éléments II-IV ZnSiN2, ZnGeN2 et ZnSnN2 forment une famille de semi-conducteurs liés aux nitrures d'éléments III (le GaN et ses alliages contenant de l'aluminium ou de l'indium). Ils s'obtiennent par construction en remplaçant l'élément III (Ga) périodiquement par un élément II (Zn) puis par un élément IV (Si, Ge ou Sn), ses voisins de gauche et de droite dans le tableau périodique. La structure cristalline qui en résulte est très proche de celle du GaN wurtzite. Le ZnGeN2 présente un désaccord de maille avec le GaN inférieur à 1%. Sa largeur de bande interdite est de quelques p

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Beddelem, Nicole. "Croissance et caractérisation de nitrures ZnGeN2 pour applications optoélectroniques." Electronic Thesis or Diss., Université de Lorraine, 2019. http://www.theses.fr/2019LORR0029.

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Les nitrures d'éléments II-IV ZnSiN2, ZnGeN2 et ZnSnN2 forment une famille de semi-conducteurs liés aux nitrures d'éléments III (le GaN et ses alliages contenant de l'aluminium ou de l'indium). Ils s'obtiennent par construction en remplaçant l'élément III (Ga) périodiquement par un élément II (Zn) puis par un élément IV (Si, Ge ou Sn), ses voisins de gauche et de droite dans le tableau périodique. La structure cristalline qui en résulte est très proche de celle du GaN wurtzite. Le ZnGeN2 présente un désaccord de maille avec le GaN inférieur à 1%. Sa largeur de bande interdite est de quelques p

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Rolles, Mélanie. "Étude théorique de la faisabilité des LED à base de ZnGeN2." Thesis, Université de Lorraine, 2018. http://www.theses.fr/2018LORR0206/document.

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Le développement de LED à base de nitrures représente un enjeu important tant sur le plan scientifique qu’industriel et sociétal. De par leur large bande interdite, les matériaux semi-conducteurs à base de nitrures d’éléments III (composés III-N) tels que le GaN et ses alliages sont de très bons candidats pour la réalisation de dispositifs optoélectroniques nouveaux. Néanmoins, ces systèmes présentent bon nombre de limitations, principalement dues à l’évolution des propriétés de l’InGaN lorsque la concentration d’indium augmente. Les effets de contrainte et de polarisation affectent la qualité

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Rolles, Mélanie. "Étude théorique de la faisabilité des LED à base de ZnGeN2." Electronic Thesis or Diss., Université de Lorraine, 2018. http://www.theses.fr/2018LORR0206.

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Le développement de LED à base de nitrures représente un enjeu important tant sur le plan scientifique qu’industriel et sociétal. De par leur large bande interdite, les matériaux semi-conducteurs à base de nitrures d’éléments III (composés III-N) tels que le GaN et ses alliages sont de très bons candidats pour la réalisation de dispositifs optoélectroniques nouveaux. Néanmoins, ces systèmes présentent bon nombre de limitations, principalement dues à l’évolution des propriétés de l’InGaN lorsque la concentration d’indium augmente. Les effets de contrainte et de polarisation affectent la qualité

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Rablău, Corneliu Ioan. "Photoluminescence and optical absorption spectroscopy of infrared materials Cr²+:ZnSe and ZnGeP₂." Morgantown, W. Va. : [West Virginia University Libraries], 1999. http://etd.wvu.edu/templates/showETD.cfm?recnum=1124.

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Thesis (Ph. D.)--West Virginia University, 1999.<br>Title from document title page. Document formatted into pages; contains xv, 200 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 194-200).

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Stevens, Kevin T. "Electron-nuclear double resonance studies of point defects in AgGaSe₂ and ZnGeP₂." Morgantown, W. Va. : [West Virginia University Libraries], 1999. http://etd.wvu.edu/templates/showETD.cfm?recnum=1130.

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Thesis (Ph. D.)--West Virginia University, 1999.<br>Title from document title page. Document formatted into pages; contains ix, 165 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 118-122).

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Books on the topic "ZnGeP2"

1

N, Dietz, and United States. National Aeronautics and Space Administration., eds. Native defect related optical properties of ZnGeP₂. National Aeronautics and Space Administration, 1994.

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2

Nikolaus, Dietz, and United States. National Aeronautics and Space Administration., eds. Defect characterization in ZnGeP₂ by time-resolved photoluminescence. National Aeronautics and Space Administration, 1995.

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3

H, Churnside James, and Wave Propagation Laboratory, eds. Frequency conversion of a COb2s laser with ZnGePb2s. U.S. Dept. of Commerce, National Oceanic and Atmospheric Administration, Environmental Research Laboratories, Wave Propagation Laboratory, 1992.

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Mason, Paul David. A detailed study of second harmonic generation of carbon dioxide laser radiation in AgGaSe[inferior 2] and ZnGeP[inferior 2]. University of Birmingham, 1996.

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United States. National Aeronautics and Space Administration., ed. Final technical report on growth of new materials for solid state laser applications with a supplemental study on the growth of ZnGeP ́by the vertical Bridgman method, September 1, 1986 through March 31, 1991. Board of Trustees of the Leland Stanford Junior University, Center for Materials Research, 1993.

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National Aeronautics and Space Administration (NASA) Staff. Growth of New Materials for Solid State Laser Applications. the Growth of Zngep2 by the Vertical Bridgman Method. Independently Published, 2018.

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Frequency conversion of a CO ́laser with ZnGeP. U.S. Dept. of Commerce, National Oceanic and Atmospheric Administration, Environmental Research Laboratories, Wave Propagation Laboratory, 1992.

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Defect characterization in ZnGeP₂ by time-resolved photoluminescence. National Aeronautics and Space Administration, 1995.

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Book chapters on the topic "ZnGeP2"

1

Rössler, U. "ZnGeP2: force constants." In New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_55.

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Kobayashi, Takayoshi. "Sellmeier Dispersion for Phase-Matched Terahertz Generation in ZnGeP2." In Ultrashort Pulse Lasers and Ultrafast Phenomena. CRC Press, 2023. http://dx.doi.org/10.1201/9780429196577-36.

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Apollonov, V. V. "Subtraction of the CO2 Laser Radiation Frequencies in a ZnGeP2 Crystal." In High-Energy Molecular Lasers. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-33359-5_50.

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Chandra, Satish, Deepak Kumar, Rukmani Singh, Ritesh Kumar, and Virendra Kumar. "Physical Properties Resemblance of Optical Material ZnGeN2 with GaN Under Different Higher Pressures." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0312-0_66.

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Rife, J. C. "Zinc Germanium Phosphide (ZnGeP2)." In Handbook of Optical Constants of Solids. Elsevier, 1997. http://dx.doi.org/10.1016/b978-012544415-6.50123-0.

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Balčaitis, G., Z. Januškevičius, and A. Sodeika. "On the Nature of Energy Levels in ZnGeP₂." In May 16. De Gruyter, 1985. http://dx.doi.org/10.1515/9783112494646-060.

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Levalois, M., and G. Allais. "Etude structurale, par diffraction de R-X, des liaisons dans les semiconducteurs ternaires ZnSiAs₂, ZnGeAs₂ et ZnSnAs ₂." In September 16. De Gruyter, 1988. http://dx.doi.org/10.1515/9783112495643-011.

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Levalois, M., and G. Allais. "Etude par diffraction de R-X de la densité de charge de valence dans les deux semi-conducteurs tétraédriques ZnSiAs₂ et ZnGeAs₂." In 16 January. De Gruyter, 1989. http://dx.doi.org/10.1515/9783112472866-024.

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Levalois, M., and G. Allais. "Etude par diffraction de R-X de la densité de charge de valence dans les deux semi-conducteurs tétraédriques ZnSiAs₂ et ZnGeAs₂." In January 16. De Gruyter, 1989. http://dx.doi.org/10.1515/9783112495100-025.

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Conference papers on the topic "ZnGeP2"

1

Piotrowski, Marcin, Achille Bogas-Droy, Gerhard Spindler, and Anne Hildenbrand-Dhollande. "High-power mid-IR ns-pulsed CdSiP2 OPO pumped at 2.06 µm compared to ZnGeP2 OPO." In Advanced Solid State Lasers. Optica Publishing Group, 2024. https://doi.org/10.1364/assl.2024.aw4a.2.

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In a compact cavity, we use a CSP OPO pumped by a Ho:LLF laser (2.06 µm) to achieve more than 8 W of mid-IR power. We compare the performance of the CSP non-linear crystal to commonly used ZGP for mid-IR applications.

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Юдин, Н. Н., А. Л. Худолей, М. М. Зиновьев, А. С. Ольшуков та А. Ю. Давыдова. "ВЛИЯНИЕ МАГНИТОРИОЛОГИЧЕСКОЙ ПОЛИРОВКИ ZnGeP2 НА ШЕРОХОВАТОСТЬ ПОВЕРХНОСТИ". У XXVIII Международный симпозиум «Оптика атмосферы и океана. Физика атмосферы». Crossref, 2022. http://dx.doi.org/10.56820/oaopa.2022.24.64.002.

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KRIVOSHEEVA, A. V., V. L. SHAPOSHNIKOV, V. V. LYSKOUSKI, F. ARNAUD D'AVITAYA, and J. L. LAZZARI. "THE EFFECT OF IMPURITY ON MAGNETIC PROPERTIES OF ZnGeP2 AND ZnGeAs2." In Proceedings of the International Conference on Nanomeeting 2007. WORLD SCIENTIFIC, 2007. http://dx.doi.org/10.1142/9789812770950_0013.

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Князькова, А. И. "ИССЛЕДОВАНИЕ СПЕКТРОВ КОМБИНАЦИОННОГО РАССЕЯНИЯ КРИСТАЛЛОВ ZnGeP2". У XXVIII Международный симпозиум «Оптика атмосферы и океана. Физика атмосферы». Crossref, 2022. http://dx.doi.org/10.56820/oaopa.2022.85.51.002.

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В работе исследовались кристаллы ZnGeP2 с разным порогом оптического пробоя. Спектры комбинационного рассеяния кристаллов получены с помощью системы inVia Reflex с длиной волны возбуждения 785 нм. полученные спектры комбинационного рассеяния кристаллов с разным порогом оптического пробоя имеют одинаковые пики на частотах 119.9, 245.5, 326.8 и 387.7 см-1 характерные ZnGeP2 соединению. Отличающиеся пики свидетельствуют о различной лучевой стойкости исследуемых кристаллов.

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Andreev, Yu M., V. G. Voevodin, P. P. Geiko, A. I. Gribenyukov, V. V. Zuev, and V. E. Zuev. "Effective Source of Coherent Radiation Based on CO2 Lasers and ZnGeP2 Frequency Converters." In Laser and Optical Remote Sensing: Instrumentation and Techniques. Optica Publishing Group, 1987. http://dx.doi.org/10.1364/lors.1987.wc13.

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The ZnGeP2 monocrystals have high nonlinear figure of merit, third after Te and CdGeAs2. ZnGeP2 is sufficiently birefringent (B = + 0.04) for three-frequency matching mixing practically all over the transmission range. However, mainly due to low optical transmission of the monocrystals available, the experimental studies of frequency converters (FC) have been limited until recently to approbation of the CO2 laser radiation up-[1] and downconverters [2].

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Allik, Toomas H., Suresh Chandra, Peter G. Schunemann, et al. "3.5 pm Pumped NCPM ZnGeP2 OPO." In Advanced Solid State Lasers. OSA, 1998. http://dx.doi.org/10.1364/assl.1998.fc2.

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Schunemann, P. G., P. A. Budni, L. Pomeranz, M. G. Knights, T. M. Pollak, and E. P. Chicklis. "Improved ZnGeP2 for High-Power OPO’s." In Advanced Solid State Lasers. OSA, 1997. http://dx.doi.org/10.1364/assl.1997.pc6.

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Зиновьев, М. М., Н. Н. Юдин, И. О. Дорофеев, С. Н. Подзывалов та Е. С. Слюнько. "ТЕМПЕРАТУРНАЯ ЗАВИСИМОСТЬ ОПТИЧЕСКОЙ ПРОЧНОСТИ МОНОКРИСТАЛЛА ZnGeP2". У XXVIII Международный симпозиум «Оптика атмосферы и океана. Физика атмосферы». Crossref, 2022. http://dx.doi.org/10.56820/oaopa.2022.42.91.002.

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Abstract:

В работе показано увеличение пороговой плотности энергии лазерного излучения на длине волны 2091 нм при уменьшении температуры от 0ºС до -60ºС до достижения оптического пробоя образца монокристалла ZnGeP2 (ZGP). При снижении температуры от 0º до -60º С наблюдается резкое увеличение пороговой плотности энергии с 1,6 до 2,6 Дж/см2, при диаметре лазерного пучка 270 мкм, и с 3,2 до 10,2 Дж/см2 при диаметре 100 мкм (в 1,5 и 3 раза, соответственно).

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Князькова, А. И., Д. А. Вражнов, Ю. В. Кистенев, О. А. Романовский, and М. С. Снегерев. "STUDY OF POLARIZED COMBINED SCATTERING OF ZnGeP2 SINGLE CRYSTALS." In XXX Юбилейный Международный симпозиум Оптика атмосферы и океана. Физика атмосферы. Crossref, 2024. https://doi.org/10.56820/oao30b51.

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В работе исследовались кристаллы ZnGeP2 с ориентацией кристаллографической оси (100) и (001). Показано, что в случае использовании поляризационной приставки меняется соотношение мод кристалла. Работа выполнена в рамках государственного задания ИОА СО РАН. ZnGeP2 crystals with the orientation of the crystallographic axis (100) and (001) were studied in this work. It is shown that in the case of using a polarization prefix, the ratio of the modes of the crystal changes. The work was performed within the framework of the state assignment of the IOA SB RAS.

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Lippert, E., H. Fonnum, G. Rustad, and K. Stenersen. "ZnGeP2 in High Power Optical Parametric Oscillators." In 2008 IEEE PhotonicsGlobal@Singapore (IPGC). IEEE, 2008. http://dx.doi.org/10.1109/ipgc.2008.4781502.

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