Relevant bibliographies by topics / ZnO:Al

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'ZnO:Al'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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Journal articles on the topic "ZnO:Al"

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Riaz, Adeel, Amna Ashraf, Hymna Taimoor, et al. "Photocatalytic and Photostability Behavior of Ag- and/or Al-Doped ZnO Films in Methylene Blue and Rhodamine B Under UV-C Irradiation." Coatings 9, no. 3 (2019): 202. http://dx.doi.org/10.3390/coatings9030202.

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Silver (Ag) and/or aluminum (Al)-doped zinc oxide (ZnO:Ag, ZnO:Al) films with different concentrations were produced using sol-gel process and investigated for wettability and photocatalysis. Water contact angle (CA) measurements indicated the films to be hydrophilic with reduced solid/liquid interfacial surface energy upon metal doping. The films were highly transparent (>94%) with red or blue shift in the absorption edge depending on the dopant type (Ag or Al) owing to the Burstein–Moss effect. The ZnO:Ag and ZnO:Al films with 0.5 and 1.0 wt.% metal dopant showed high degradation efficien
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Duan, Li, Feng Wei, Jibin Fan, et al. "Low-Cost Fabrication of UV Photodetector Based on Hexagonal Nanocrystal ZnO:Al/p-Si Heterojunction." Nano 11, no. 02 (2016): 1650019. http://dx.doi.org/10.1142/s1793292016500193.

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ZnO:Al/p-Si heterojunction was fabricated by depositing a hexagonal nanocrystal ZnO:Al film on p-type Si substrate using a simple chemical bath deposition (CBD) method. The vertically aligned hexagonal ZnO:Al nanocrystals reduce the grain boundary scattering and provide good conductivity. The ZnO:Al/Si heterojunction shows obvious photocurrent under ultraviolet (UV) illumination. A high UV-to-visible rejection ratio of the ZnO:Al/Si heterojunction indicates that the hexagonal nanocrystal ZnO:Al film is a good material for fabricating UV photodetectors. Furthermore, the response speed of the ph
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Sinaga, P. "PENGARUH TEMPERATUR ANNEALING TERHADAP STRUKTUR MIKRO, SIFAT LISTRIK DAN SIFAT OPTIK DARI FILM TIPIS OKSIDA KONDUKTIF TRANSPARAN ZnO:Al YANG DIBUAT DENGAN TEKNIK SCREEN PRINTING." Jurnal Pengajaran Matematika dan Ilmu Pengetahuan Alam 14, no. 2 (2015): 51. http://dx.doi.org/10.18269/jpmipa.v14i2.301.

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Film tipis ZnO:Al transparan telah dibuat dengan menumbuhkannya di atas substrat dari kaca mikroskop dengan menggunakan metode sol gel teknik screen printing. Partikel ZnO:Al dibuat dengan cara mencampurkan ZnAc dengan Aluminium nitrat nanohidrat ( Al/Zn = 1.0x10-2) dalam larutan etanol dan dietilen glikol (etanol/DEG = 1/3). Pasta ZnO:Al yang terbentuk dicetakkan pada substrat kaca dan masing masing di anealing pada temperatur 300 hingga 600oC. Hasil karakterisasi XRD mengindikasikan struktur kristal wurtzite ZnO dengan parameter kisi a = 3,249953 Å dan c = 5,241091 Å. Hasil pemotretan SEM me
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Cisneros-Contreras, Ivan Ricardo, Geraldine López-Ganem, Oswaldo Sánchez-Dena, Yew Hoong Wong, Ana Laura Pérez-Martínez, and Arturo Rodríguez-Gómez. "Al-Doped ZnO Thin Films with 80% Average Transmittance and 32 Ohms per Square Sheet Resistance: A Genuine Alternative to Commercial High-Performance Indium Tin Oxide." Physics 5, no. 1 (2023): 45–58. http://dx.doi.org/10.3390/physics5010004.

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In this study, a low-sophistication low-cost spray pyrolysis system built by undergraduate students is used to grow aluminum-doped zinc oxide thin films (ZnO:Al). The pyrolysis system was able to grow polycrystalline ZnO:Al with a hexagonal wurtzite structure preferentially oriented on the c-axis, corresponding to a hexagonal wurtzite structure, and exceptional reproducibility. The ZnO:Al films were studied as transparent conductive oxides (TCOs). Our best ZnO:Al TCO are found to exhibit an 80% average transmittance in the visible range of the electromagnetic spectrum, a sheet resistance of 32
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Shi, Ming Ji, and Lan Li Chen. "Fabrication of High Quality Textured ZnO:Al Thin Films." Solid State Phenomena 181-182 (November 2011): 447–50. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.447.

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High quality textured ZnO:Al electrode can improve the energy conversion efficiency of silicon based thin film solar cells. Two groups of ZnO:Al films were fabricated under different sputtering powers. Different textured surfaces were got when corroding ZnO:Al films with diluted HCl solutions of different concentration. The transmission spectrum and square resistance of the samples were measured. The dependence of sputtering power and corrosion time on the resistivity, transmittance and surface texture of the samples were studied. The results showed that the density of the ZnO:Al film was main
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Roberts, Neil, R. P. Wang, Arthur W. Sleight, and William W. Warren. "27Aland69Gaimpurity nuclear magnetic resonance in ZnO:Al and ZnO:Ga." Physical Review B 57, no. 10 (1998): 5734–41. http://dx.doi.org/10.1103/physrevb.57.5734.

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Reukova, O. V., V. G. Kytin, V. A. Kulbachinskii, L. I. Burova, A. R. Kaul, and A. G. Ulyashin. "Weak localization in ZnO:Ga and ZnO:Al thin films." Journal of Physics: Conference Series 568, no. 5 (2014): 052025. http://dx.doi.org/10.1088/1742-6596/568/5/052025.

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Baydogan, N., Y. Gokce, Murat Baydogan, and Huseyin Cimenoglu. "Capacitance-Voltage (C-V) Properties of ZnO:Al/p-Si Heterojunctions." Defect and Diffusion Forum 334-335 (February 2013): 349–52. http://dx.doi.org/10.4028/www.scientific.net/ddf.334-335.349.

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ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.
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Kim, Doo Soo, Byeong Yun Oh, Min Chang Jeong, and Jae Min Myoung. "Characteristics of Al-Doped ZnO Transparent Conductive Oxide Films for Solar Cell Applications." Solid State Phenomena 124-126 (June 2007): 131–34. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.131.

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Al-doped ZnO (ZnO:Al) films for transparent electrode applications in dye-sensitized solar cells and thin film solar cells were fabricated and characterized. In order to investigate the effect of crystallinity of the ZnO:Al films to the morphology and optical properties of the etched surface, the ZnO:Al films were deposited with varying substrate temperature by rf magnetron sputtering system and then films’ surface was etched in diluted hydrochloric acid (HCl) solution. Surface morphology of the amorphous ZnO:Al film deposited at room temperature was controllable to have large surface area, bu
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Sutanto, Heri, Sufwan Durri, Singgih Wibowo, Hady Hadiyanto, and Eko Hidayanto. "Rootlike Morphology of ZnO:Al Thin Film Deposited on Amorphous Glass Substrate by Sol-Gel Method." Physics Research International 2016 (May 26, 2016): 1–7. http://dx.doi.org/10.1155/2016/4749587.

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Zinc oxide (ZnO) and aluminum doped zinc oxide (ZnO:Al) thin films have been deposited onto a glass substrate by sol-gel spray coating method at atmospheric pressure. X-ray diffractometer (XRD), scanning electron microscopy (SEM), and UV-Vis spectrophotometer have been used to characterize the films. XRD spectra indicated that all prepared thin films presented the wurtzite hexagonal structure. SEM images exhibited rootlike morphology on the surface of thin films and the shortest root diameter was about 0.219 μm. The UV-Vis absorption spectra exhibited the absorption edges that were slightly sh
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Dissertations / Theses on the topic "ZnO:Al"

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Trindade, Neilo Marcos [UNESP]. "Investigação das propriedades ópticas de ZnO e ZnO:Al." Universidade Estadual Paulista (UNESP), 2015. http://hdl.handle.net/11449/135936.

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Made available in DSpace on 2016-03-07T19:20:28Z (GMT). No. of bitstreams: 0 Previous issue date: 2015-08-21. Added 1 bitstream(s) on 2016-03-07T19:24:05Z : No. of bitstreams: 1 000858000.pdf: 3107291 bytes, checksum: 03cc09e21968c8a2c5f8ce48884a2617 (MD5)<br>Este trabalho apresenta um estudo das propriedades ópticas de filmes finos de ZnO puro e de ZnO dopado com Al; e um estudo da influência da variação de pressão do gás argônico durante a deposição dos filmes, nas propriedades ópticas e estruturais. Os filmes foram depositados em substrato de vidro e silício pela técnica RF magnetron sput
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Trindade, Neilo Marcos. "Investigação das propriedades ópticas de ZnO e ZnO:Al /." Sorocaba, 2015. http://hdl.handle.net/11449/135936.

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Orientador: José Roberto Ribeiro Bortoleto<br>Co-orientador: Americo Sheitiro Tabata<br>Banca: Luis Vicente de Andrade Scalvi<br>Banca: Jose Humberto Dias da Silva<br>Banca: Julio Ricardo Sambrano<br>Banca: Maximo Siu Li<br>O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi<br>Resumo: Este trabalho apresenta um estudo das propriedades ópticas de filmes finos de ZnO puro e de ZnO dopado com Al; e um estudo da influência da variação de pressão do gás argônico durante a deposição do
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Бересток, Таїсія Олександрівна, Таисия Александровна Бересток, Taisiia Oleksandrivna Berestok та ін. "Структурні та субструктурні характеристики хімічно осаджених плівок ZnO:Al". Thesis, Сумський державний університет, 2015. http://essuir.sumdu.edu.ua/handle/123456789/41125.

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Завдяки унікальним оптичним та електрофізичним вдастивостям плівки оксиду цинку леговані атомами алюмінію (ZnO:Al) розглядаються як альтернатива більш дорогому оксиду олова легованому індієм (ITO) при використанні як ефективний струмопровідний контакт тонкоплівкових сонячних елементів, покриттів поглинаючих НВЧ випромінювання, стерилізаційних та антизаморожувальних покриттів.
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Ruske, Florian. "Magnetronsputtern von hochleitfähigen ZnO:Al-Schichten für die Photovoltaik." Stuttgart Fraunhofer-IRB-Verl, 2009. http://d-nb.info/993460631/04.

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Bauer, Andreas [Verfasser]. "ZnO:Al-Elektroden in semitransparenten organischen Solarzellen und Tandemsolarzellen / Andreas Bauer." Karlsruhe : KIT Scientific Publishing, 2012. http://www.ksp.kit.edu.

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Chaves, Michel [UNESP]. "Efeito da pressão em filmes finos de ZnO:Al por RF Magnetron sputtering reativo." Universidade Estadual Paulista (UNESP), 2014. http://hdl.handle.net/11449/115609.

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Made available in DSpace on 2015-03-03T11:52:23Z (GMT). No. of bitstreams: 0 Previous issue date: 2014-07-16Bitstream added on 2015-03-03T12:07:24Z : No. of bitstreams: 1 000806683.pdf: 1193891 bytes, checksum: 1226deee936f356b44515bf10a7e5739 (MD5)<br>Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)<br>Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)<br>Filme finos de AZO foram sintetizados sobre substratos de vidro utilizando um alvo de Zn-Al (5% at Al) com 99,999% de pureza através da técnica RF magnetron sputtering reativo a temperatura ambiente. As propr
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Chaves, Michel. "Efeito da pressão em filmes finos de ZnO:Al por RF Magnetron sputtering reativo /." Bauru, 2014. http://hdl.handle.net/11449/115609.

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Orientador: José Roberto Ribeiro Bortoleto<br>Banca: José Humberto da Silva<br>Banca: Adriana de Oliveira Delgado<br>O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi<br>Resumo: Filme finos de AZO foram sintetizados sobre substratos de vidro utilizando um alvo de Zn-Al (5% at Al) com 99,999% de pureza através da técnica RF magnetron sputtering reativo a temperatura ambiente. As propriedades estruturais, elétricas, ópticas e morfológicas foram investigadas em função da variação d
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Погребняк, Олександр Дмитрович, Александр Дмитриевич Погребняк, Oleksandr Dmytrovych Pohrebniak, A. M. Muhammed, and N. Y. Jamil. "Electrical and optical properties of ZnO:Al films prepared by chemical vapour deposition (CVD)." Thesis, Видавництво СумДУ, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20968.

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Chaves, Michel. "Estudo dos mecanismos de dopagem e eficiência de ionização em filmes finos de ZnO:Al /." Bauru, 2018. http://hdl.handle.net/11449/166356.

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Orientador: José Roberto Ribeiro Bortoleto<br>Banca: Tersio Guilherme de Souza Cruz<br>Banca: Marcio Peron Franco de Godoy<br>Banca: José Humberto Dias da Silva<br>Banca: Steven Frederick Durrant<br>Neste trabalho foi realizado o estudo sobre o efeito da pressão e a evolução da espessura nos filmes de AZO, produzidos com alvo metálico e alvo cerâmico através da técnica RF magnetron sputtering. Este estudo teve a finalidade de investigar as propriedades ópticas, estruturais, morfológicas e principalmente as propriedades elétricas, especificamente a causa que leva a baixa ativação dos átomos de
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Owen, Jorj Ian [Verfasser]. "Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells / Jorj Ian Owen." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2012. http://d-nb.info/1021914673/34.

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Books on the topic "ZnO:Al"

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Duenow, Joel N. ZnO:Al doping level and hydrogen growth ambient effects on CIGS solar cell performance: Preprint. National Renewable Energy Laboratory, 2008.

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Veljković, Branislav. Dva znoja. Apostrof, 2003.

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Ružić, Mira. Znova Marx? Dolenjska založba, 1999.

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Grdina, Igor. Vedno znova Tannenberg. Inštitut za civilizacijo in kulturo, ICK, 2015.

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ek, Slavoj Z. iz. Poskusiti znova-spodleteti bolje. Cankarjeva založba, 2011.

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Beretič, Miran. Od znoja do boja: Pripoved v 4 knjigah. Tiskarna Novo mesto, 1999.

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Malinkowa, Trudla. A znowa maš so rozsudźić: Žiwjenski wobraz Marje Kubašec. Ludowe nakładnistwo Domowina, 1990.

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Kolenik, Lipej. Znova: Koroški Slovenci pod britansko zasedbeno oblastjo po letu 1945 : pričevanja in poročila. Drava, 2008.

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Thiele, Erin. Čelenie Rozvodu Znova. NarrowRoad Publishing House, 2021.

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Black, Holly. Dlaczego krol elfow nie znosil basni. Jaguar, 2021.

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Book chapters on the topic "ZnO:Al"

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Kawamoto, H., R. Konishi, H. Harada, and H. Sasakura. "Characteristics of ZnO:Al Transparent Conductive Films." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93430-8_63.

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Koziarskyi, I. P., E. V. Maistruk, and D. P. Koziarskyi. "Thin ZnO:Al and CdS Films’ Optical Properties." In Lecture Notes in Mechanical Engineering. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-6133-3_26.

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Ferkha, Djouweyda, and Douniazad Mezdour. "ZnO:Al Properties Study for a Transparent Electrode Application." In Green Energy and Technology. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-6148-7_63.

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Hüpkes, J., J. Müller, and B. Rech. "Texture Etched ZnO:Al for Silicon Thin Film Solar Cells." In Transparent Conductive Zinc Oxide. Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-73612-7_8.

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Mauch, R. H., and H. W. Schock. "Highly Transparent and Conductive ZnO:Al Thin Films for Photovoltaic Applications." In Tenth E.C. Photovoltaic Solar Energy Conference. Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_23.

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Park, Hyun Ah, K. Prabakar, Yeon Chul Yoo, Sun Keun Hwang, and Chong Mu Lee. "Structure and Photoluminescence Properties of ZnO:Al/Porous Silicon Thin Films." In Materials Science Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-966-0.21.

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Wang, Wen Wen, and Tian Min Wang. "Effects of γ-Ray Irradiation on Structure and Properties of ZnO:Al Thin Film." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-432-4.2137.

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Kerour, Safia, Meryem Lasladj, and Abdeslam Bouloufa. "Solar Cell Based on p-Si/n-Zno:Al Thin Films: Simulation and Parameters Extraction." In Proceedings of the Third International Symposium on Materials and Sustainable Development. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-89707-3_22.

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Kim, Sang Kyun, Jung Chul Lee, Viresh Dutta, Sung Ju Park, and Kyung Hoon Yoon. "The Effect of ZnO:Al Sputtering Condition on a-Si:H / Si Wafer Heterojunction Solar Cells." In Solid State Phenomena. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.1015.

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Grigorjeva, Larisa, Donats Millers, Krishjanis Smits, Claude J. A. Monty, Jules Kouam, and Lassad El Mir. "The Luminescence Properties of ZnO:Al Nanopowders Obtained by Sol-gel, Plasma and Vaporization-Condensation Methods." In Solid State Phenomena. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-38-8.135.

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Conference papers on the topic "ZnO:Al"

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Jamee, Zaheer Al. "Synthesisation of ZnO:Al Nanoparticles by Uncovered Hydrothermal Method for Photocatalytic Activity of Azoic Dye." In 2024 13th International Conference on Electrical and Computer Engineering (ICECE). IEEE, 2024. https://doi.org/10.1109/icece64886.2024.11024907.

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Karpyna, Vitalii, Arsenii Ievtushenko, Olena Olifan, et al. "Substrate bias influence on the properties of ZnO:Al and ZnO:Al,N films deposited by magnetron sputtering." In IXth INTERNATIONAL SAMSONOV CONFERENCE “MATERIALS SCIENCE OF REFRACTORY COMPOUNDS”. Frantsevich Ukrainian Materials Research Society, 2024. http://dx.doi.org/10.62564/m4-vk1027.

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ZnO-based wide bandgap semiconductor oxides with a bandgap 3.3 eV have unique optical and electrical properties that make it promising for transparent electronics, optoelectronics and solar cells [1]. Magnetron sputtering (MS) attracts our attention due to the great possibilities for the deposition oxide films with good film adhesion, high deposition rates, film uniformity and stable composition of the deposited films. Traditionally the substrate potential at MS is grounded. The negative or positive potential applied to substrate (substrate bias) can influence the film growth as well. As to si
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Rahmane, Saad, Mohamed Abdou Djouadi, Mohamed Salah Aida, and Nicolas Barreau. "Oxygen effect in Magnetron Sputtered Aluminum doped Zinc oxide films." In 13th International Conference on Plasma Surface Engineering September 10 - 14, 2012, in Garmisch-Partenkirchen, Germany. Linköping University Electronic Press, 2013. http://dx.doi.org/10.3384/wcc2.311-316.

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In this work, polycrystalline transparent conductive aluminum doped zinc oxide (ZnO:Al) films, have been successfully grown on glass and silicon substrates by rf magnetron sputtering technique at room temperature. The effect of oxygen content in plasma on the structural, optical and electrical properties of the films was systematically studied. The growth rate was fond to decrease with the increase in O2 content. The crystal structure of ZnO:Al films deposited on glass is hexagonal with C axis preferential orientation, while for film deposited on silicon substrate, the preferred orientation of
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Lee, Ching-Ting, Wen-Ming Shien, Hsin-Ying Lee, and Cheng-Hsu Chou. "ZnO:Al based transparent thin film transistors." In LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008). IEEE, 2008. http://dx.doi.org/10.1109/leos.2008.4688490.

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Prepelita, Petronela, R. Medianu, F. Garoi, A. Moldovan, Gabriel Ferro, and Paul Siffert. "Growth of ZnO:Al thin films onto different substrates." In 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗. AIP, 2010. http://dx.doi.org/10.1063/1.3518300.

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Ruske, Florian, Mark Wimmer, Grit Köppel, Andreas Pflug, and Bernd Rech. "Optical characterization of high mobility polycrystalline ZnO:Al films." In SPIE OPTO, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2012. http://dx.doi.org/10.1117/12.908969.

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Yu, Zhinong, Jin Xu, Wei Xue, and Jinwei Li. "The annealing process of R.F. magnetron sputtered ZnO:Al films." In 2007 Asia Optical Fiber Communication and Optoelectronics Conference. IEEE, 2007. http://dx.doi.org/10.1109/aoe.2007.4410872.

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Berner, Marcel, Marc Samann, Ahmed Garamoun, and Markus B. Schubert. "Short papers: Quantification of optical deflection by laser-structured ZnO:Al." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2. IEEE, 2012. http://dx.doi.org/10.1109/pvsc-vol2.2012.6656777.

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Berner, Marcel, Marc Samann, Ahmed Garamoun, and Markus B. Schubert. "Short papers: Quantification of optical deflection by laser-structured ZnO:Al." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2. IEEE, 2013. http://dx.doi.org/10.1109/pvsc-vol2.2013.6656777.

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Orlov, Anatolii, Veronika Ulianova, Yuriy Yakimenko, Oleksandr Bogdan, and Genadzi Pashkevich. "Influence of process time on ZnO and ZnO:Al nanorods formation." In 2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2016. http://dx.doi.org/10.1109/elnano.2016.7493033.

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