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Dissertations / Theses on the topic 'ZnO:Al'

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Published: 4 June 2021
Last updated: 25 July 2025

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1

Trindade, Neilo Marcos [UNESP]. "Investigação das propriedades ópticas de ZnO e ZnO:Al." Universidade Estadual Paulista (UNESP), 2015. http://hdl.handle.net/11449/135936.

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Made available in DSpace on 2016-03-07T19:20:28Z (GMT). No. of bitstreams: 0 Previous issue date: 2015-08-21. Added 1 bitstream(s) on 2016-03-07T19:24:05Z : No. of bitstreams: 1 000858000.pdf: 3107291 bytes, checksum: 03cc09e21968c8a2c5f8ce48884a2617 (MD5)<br>Este trabalho apresenta um estudo das propriedades ópticas de filmes finos de ZnO puro e de ZnO dopado com Al; e um estudo da influência da variação de pressão do gás argônico durante a deposição dos filmes, nas propriedades ópticas e estruturais. Os filmes foram depositados em substrato de vidro e silício pela técnica RF magnetron sput
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2

Trindade, Neilo Marcos. "Investigação das propriedades ópticas de ZnO e ZnO:Al /." Sorocaba, 2015. http://hdl.handle.net/11449/135936.

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Orientador: José Roberto Ribeiro Bortoleto<br>Co-orientador: Americo Sheitiro Tabata<br>Banca: Luis Vicente de Andrade Scalvi<br>Banca: Jose Humberto Dias da Silva<br>Banca: Julio Ricardo Sambrano<br>Banca: Maximo Siu Li<br>O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi<br>Resumo: Este trabalho apresenta um estudo das propriedades ópticas de filmes finos de ZnO puro e de ZnO dopado com Al; e um estudo da influência da variação de pressão do gás argônico durante a deposição do
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3

Бересток, Таїсія Олександрівна, Таисия Александровна Бересток, Taisiia Oleksandrivna Berestok та ін. "Структурні та субструктурні характеристики хімічно осаджених плівок ZnO:Al". Thesis, Сумський державний університет, 2015. http://essuir.sumdu.edu.ua/handle/123456789/41125.

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Завдяки унікальним оптичним та електрофізичним вдастивостям плівки оксиду цинку леговані атомами алюмінію (ZnO:Al) розглядаються як альтернатива більш дорогому оксиду олова легованому індієм (ITO) при використанні як ефективний струмопровідний контакт тонкоплівкових сонячних елементів, покриттів поглинаючих НВЧ випромінювання, стерилізаційних та антизаморожувальних покриттів.
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4

Ruske, Florian. "Magnetronsputtern von hochleitfähigen ZnO:Al-Schichten für die Photovoltaik." Stuttgart Fraunhofer-IRB-Verl, 2009. http://d-nb.info/993460631/04.

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5

Bauer, Andreas [Verfasser]. "ZnO:Al-Elektroden in semitransparenten organischen Solarzellen und Tandemsolarzellen / Andreas Bauer." Karlsruhe : KIT Scientific Publishing, 2012. http://www.ksp.kit.edu.

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6

Chaves, Michel [UNESP]. "Efeito da pressão em filmes finos de ZnO:Al por RF Magnetron sputtering reativo." Universidade Estadual Paulista (UNESP), 2014. http://hdl.handle.net/11449/115609.

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Made available in DSpace on 2015-03-03T11:52:23Z (GMT). No. of bitstreams: 0 Previous issue date: 2014-07-16Bitstream added on 2015-03-03T12:07:24Z : No. of bitstreams: 1 000806683.pdf: 1193891 bytes, checksum: 1226deee936f356b44515bf10a7e5739 (MD5)<br>Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)<br>Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)<br>Filme finos de AZO foram sintetizados sobre substratos de vidro utilizando um alvo de Zn-Al (5% at Al) com 99,999% de pureza através da técnica RF magnetron sputtering reativo a temperatura ambiente. As propr
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7

Chaves, Michel. "Efeito da pressão em filmes finos de ZnO:Al por RF Magnetron sputtering reativo /." Bauru, 2014. http://hdl.handle.net/11449/115609.

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Orientador: José Roberto Ribeiro Bortoleto<br>Banca: José Humberto da Silva<br>Banca: Adriana de Oliveira Delgado<br>O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi<br>Resumo: Filme finos de AZO foram sintetizados sobre substratos de vidro utilizando um alvo de Zn-Al (5% at Al) com 99,999% de pureza através da técnica RF magnetron sputtering reativo a temperatura ambiente. As propriedades estruturais, elétricas, ópticas e morfológicas foram investigadas em função da variação d
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8

Погребняк, Олександр Дмитрович, Александр Дмитриевич Погребняк, Oleksandr Dmytrovych Pohrebniak, A. M. Muhammed, and N. Y. Jamil. "Electrical and optical properties of ZnO:Al films prepared by chemical vapour deposition (CVD)." Thesis, Видавництво СумДУ, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20968.

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9

Chaves, Michel. "Estudo dos mecanismos de dopagem e eficiência de ionização em filmes finos de ZnO:Al /." Bauru, 2018. http://hdl.handle.net/11449/166356.

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Orientador: José Roberto Ribeiro Bortoleto<br>Banca: Tersio Guilherme de Souza Cruz<br>Banca: Marcio Peron Franco de Godoy<br>Banca: José Humberto Dias da Silva<br>Banca: Steven Frederick Durrant<br>Neste trabalho foi realizado o estudo sobre o efeito da pressão e a evolução da espessura nos filmes de AZO, produzidos com alvo metálico e alvo cerâmico através da técnica RF magnetron sputtering. Este estudo teve a finalidade de investigar as propriedades ópticas, estruturais, morfológicas e principalmente as propriedades elétricas, especificamente a causa que leva a baixa ativação dos átomos de
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10

Owen, Jorj Ian [Verfasser]. "Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells / Jorj Ian Owen." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2012. http://d-nb.info/1021914673/34.

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11

Jullien, Maud. "Synthèse et caractérisation de films minces d’oxydes pour le développement d’un système électrochrome "tout céramique"." Thesis, Vandoeuvre-les-Nancy, INPL, 2011. http://www.theses.fr/2011INPL069N/document.

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Les systèmes électrochromes suscitent un intérêt croissant dû au fait qu’ils permettent un contrôle des propriétés optiques dans le domaine du visible et du proche infrarouge.Lors d’une précédente étude, la synthèse d’électrolytes NaSICon (Na+ SuperIonicConductor) a été réalisée. Il est alors possible de développer des systèmes électrochromes « tout céramique » à mouvement de sodium par pulvérisation cathodique. Ce travail de thèse, s’articule autour de deux axes :Le premier concerne le développement de la contre-électrode du dispositif. Des films minces ont été synthétisés dans le système Na-
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12

Philipp, Martin. "Electrical Transport and Scattering Mechanisms in Thin Silver Films for Thermally Insulating Glazing." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-70920.

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Thin silver films are widely used in low-emissivity coatings for building glazing due to their high reflectance in the infrared and high transmittance in the visible spectrum. The determining parameter for the infrared reflectance is the electrical conductance of the layer stack - the better the conductance the higher the reflectance. Electrically conductive films of thicknesses smaller than the electron mean free path exhibit a strong increase in the residual resistivity proportional to the inverse of the film thickness. Despite intensive discussions, which have extended over tens of years, i
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13

Ayachi, Boubakeur. "Towards full sputtering deposition process for CIGS solar cell fabrication : from single thin film deposition up to device characterization." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10150/document.

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De nos jours, et après plus de quatre décennies de recherche et développement de la technologie CIS, une concurrence directe avec la technologie silicium est toujours loin d'être gagnée; néanmoins, il existe certains marchés de niche où la technologie silicium ne peut pas être utilisée ou est moins appropriée. Les procédés de fabrication actuels présentent certains inconvénients: (i) certain(e)s matériaux et/ou techniques utilisé(e)s ont une forte empreinte environnementale, (ii) certains matériaux alternatifs développés sont coûteux, (iii) certaines techniques utilisées ne sont pas facilement
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14

Charpentier, Coralie. "Investigation of deposition conditions and annealing treatments on sputtered ZnO:Al thin films : Material properties and application to microcristalline silicon solar cells." Phd thesis, Ecole Polytechnique X, 2012. http://tel.archives-ouvertes.fr/tel-00796955.

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La couche mince d'Oxyde Transparent Conducteur (OTC) utilisée en tant qu'électrode avant pour les cellules photovoltaïques silicium microcristallin est un matériau déterminant pour l'amélioration de leur rendement. Un OTC prometteur est l'oxyde de zinc dopé aluminium ZnO:Al déposé par pulvérisation cathodique magnétron RF. Une première partie du travail de thèse est dédiée à l'étude de l'influence des conditions de dépôt sur la microstructure, les mécanismes de croissance et les propriétés optoélectroniques du ZnO:Al. Nous avons ainsi obtenu un optimum en termes de transparence maximale dans l
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15

Arnou, Panagiota. "Solution processing of thin films for solar cell applications : CuIn(S,Se)2, Cu(In,Ga)(S,Se)2 and ZnO:Al." Thesis, Loughborough University, 2016. https://dspace.lboro.ac.uk/2134/23224.

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Cu(In,Ga)(Se,S)2 (CIGS) solar cells have attracted a lot of attention due to their high performance and the prospect for lower manufacturing costs over conventional crystalline silicon solar cells. All recent record efficiency CIGS absorbers have been deposited using vacuum processing which introduces high manufacturing costs. CIGS can also be compatible with low cost, atmospheric processing which can significantly reduce manufacturing costs. Recently, there has been some progress in developing atmospheric solution-based processes for CIGS. Among different solution approaches, deposition of mo
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16

Sommer, Nicolas [Verfasser], Uwe [Akademischer Betreuer] Rau, and Matthias [Akademischer Betreuer] Wuttig. "Conductivity and structure of sputtered ZnO:Al on flat and textured substrates for thin-film solar cells / Nicolas Sommer ; Uwe Rau, Matthias Wuttig." Aachen : Universitätsbibliothek der RWTH Aachen, 2016. http://d-nb.info/1129875970/34.

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Sommer, Nicolas Verfasser], Uwe [Akademischer Betreuer] [Rau, and Matthias [Akademischer Betreuer] Wuttig. "Conductivity and structure of sputtered ZnO:Al on flat and textured substrates for thin-film solar cells / Nicolas Sommer ; Uwe Rau, Matthias Wuttig." Aachen : Universitätsbibliothek der RWTH Aachen, 2016. http://d-nb.info/1129875970/34.

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18

Madani, Ghahfarokhi Omid [Verfasser], Carsten [Akademischer Betreuer] Agert, and Jürgen [Akademischer Betreuer] Parisi. "Investigation of microcrystalline silicon emitters and DC sputtered ZnO:Al as front contact in silicon heterojunction solar cells / Omid Madani Ghahfarokhi. Betreuer: Carsten Agert ; Jürgen Parisi." Oldenburg : BIS der Universität Oldenburg, 2014. http://d-nb.info/1051467926/34.

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Madani, Ghahfarokhi Omid [Verfasser], Carsten Akademischer Betreuer] Agert, and Jürgen [Akademischer Betreuer] [Parisi. "Investigation of microcrystalline silicon emitters and DC sputtered ZnO:Al as front contact in silicon heterojunction solar cells / Omid Madani Ghahfarokhi. Betreuer: Carsten Agert ; Jürgen Parisi." Oldenburg : BIS der Universität Oldenburg, 2014. http://d-nb.info/1051467926/34.

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20

Hlawenka, Steffi [Verfasser], Florian [Akademischer Betreuer] Ruske, Bernd [Akademischer Betreuer] Rech, Bernd [Gutachter] Rech, Mario [Gutachter] Dähne, and Matthias [Gutachter] Wuttig. "Unravelling annealing-related processes in ZnO:Al thin films used for tailoring electrical and optical properties / Steffi Hlawenka ; Gutachter: Bernd Rech, Mario Dähne, Matthias Wuttig ; Florian Ruske, Bernd Rech." Berlin : Technische Universität Berlin, 2016. http://d-nb.info/1156015618/34.

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21

Tomita, Yuto. "Alternative transparent electrodes for organic light emitting diodes." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1236711483222-35217.

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Solid state lighting is a new environmentally friendly light source. So far, light emitting diodes (LEDs) and organic LEDs (OLEDs) have been presented as candidates with potentially high efficiency. Recent advances of OLEDs in device architecture, light-out coupling, and materials have ensured high efficiency, exceeding that of incandescent light bulbs. In contrast to conventional point source LEDs, OLEDs distribute light throughout the surface area and are not restricted by their size. Additionally, OLEDs are expected to reach sufficient stability in the near future. The remaining challenge f
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Tomita, Yuto. "Alternative transparent electrodes for organic light emitting diodes." Doctoral thesis, Technische Universität Dresden, 2008. https://tud.qucosa.de/id/qucosa%3A23806.

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Solid state lighting is a new environmentally friendly light source. So far, light emitting diodes (LEDs) and organic LEDs (OLEDs) have been presented as candidates with potentially high efficiency. Recent advances of OLEDs in device architecture, light-out coupling, and materials have ensured high efficiency, exceeding that of incandescent light bulbs. In contrast to conventional point source LEDs, OLEDs distribute light throughout the surface area and are not restricted by their size. Additionally, OLEDs are expected to reach sufficient stability in the near future. The remaining challenge f
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23

Heimke, Bruno. "RF überlagertes DC-Sputtern von transparenten leitfähigen Oxiden." Doctoral thesis, Universitätsbibliothek Chemnitz, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-116687.

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Die vorliegende Dissertation befasst sich mit dem RF- überlagerten DC-Sputtern von Indiumzinnoxid und aluminiumdotierten Zinkoxid. Bei dem dafür entwickelten synchron gepulsten RF/DC-Verfahren werden die zu untersuchenden Materialien gleichzeitig mit Hilfe eines RF- und eines PulsDC-Generators gesputtert. Ein wesentliches Resultat der Untersuchungen ist, dass durch RF- überlagertes DCSputtern Schichten abgeschieden werden können, die im Vergleich zum DC- bzw. PulsDC-Sputtern geringere spezifische Widerstände aufweisen. Dies ist auf eine Verringerung von Defekten in den abgeschiedenen Schichten
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Heimke, Bruno. "RF überlagertes DC-Sputtern von transparenten leitfähigen Oxiden." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2012. https://monarch.qucosa.de/id/qucosa%3A19919.

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Die vorliegende Dissertation befasst sich mit dem RF- überlagerten DC-Sputtern von Indiumzinnoxid und aluminiumdotierten Zinkoxid. Bei dem dafür entwickelten synchron gepulsten RF/DC-Verfahren werden die zu untersuchenden Materialien gleichzeitig mit Hilfe eines RF- und eines PulsDC-Generators gesputtert. Ein wesentliches Resultat der Untersuchungen ist, dass durch RF- überlagertes DCSputtern Schichten abgeschieden werden können, die im Vergleich zum DC- bzw. PulsDC-Sputtern geringere spezifische Widerstände aufweisen. Dies ist auf eine Verringerung von Defekten in den abgeschiedenen Schichten
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25

Gonçalves, Agnaldo de Souza [UNESP]. "Células solares de ZnO:Ga nanocristalino sensibilizado por corante." Universidade Estadual Paulista (UNESP), 2008. http://hdl.handle.net/11449/105779.

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Made available in DSpace on 2014-06-11T19:35:08Z (GMT). No. of bitstreams: 0 Previous issue date: 2008-06-30Bitstream added on 2014-06-13T19:45:03Z : No. of bitstreams: 1 goncalves_as_dr_araiq.pdf: 8384691 bytes, checksum: 99f915f60f4aa419101cf4839adc9f92 (MD5)<br>Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)<br>Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)<br>Com o objetivo de melhorar o transporte eletrônico no eletrodo nanoestruturado de ZnO, íons Ga3+ foram utilizados neste trabalho como dopantes e/ou modificadores da superfície. Nanopartículas de Zn
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Gonçalves, Agnaldo de Souza. "Células solares de ZnO:Ga nanocristalino sensibilizado por corante /." Araraquara : [s.n.], 2008. http://hdl.handle.net/11449/105779.

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Orientador: Marian Rosaly Davolos<br>Coorientador: Ana Flávia Nogueira<br>Banca: Luiz Antonio Andrade de Oliveira<br>Banca: Fernando Aparecido Sigoli<br>Banca: Ivo Alexandre Hummelgen<br>Banca: Koiti Araki<br>Resumo: Com o objetivo de melhorar o transporte eletrônico no eletrodo nanoestruturado de ZnO, íons Ga3+ foram utilizados neste trabalho como dopantes e/ou modificadores da superfície. Nanopartículas de ZnO e ZnO:Ga 1, 3 e 5% cristalinas foram preparadas pelo método da precipitação a baixa temperatura. Nenhuma evidência da formação de ZnGa2O4, mesmo na amostra ZnO:Ga 5%, foi detectada por
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27

Sainju, Deepak. "Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics." University of Toledo / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1430326934.

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Lacerda, Luis Henrique da Silveira. "INVESTIGAÇÃO TEÓRICA DOS MATERIAIS ZnO:Ba E (Ba, Zn)TiO3." UNIVERSIDADE ESTADUAL DE PONTA GROSSA, 2015. http://tede2.uepg.br/jspui/handle/prefix/2037.

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Made available in DSpace on 2017-07-24T19:37:53Z (GMT). No. of bitstreams: 1 Luis Lacerda.pdf: 6157407 bytes, checksum: 67f47ee9ce5d908521ba3d0455add580 (MD5) Previous issue date: 2015-03-09<br>Coordenação de Aperfeiçoamento de Pessoal de Nível Superior<br>Semiconductors materials are largely employed on development of innumerous optical and electronic due to their electronic, optical, ferroelectric and structural properties. Among the semiconductors materials stand out the zinc oxide (ZnO) and the barium titanate (BaTiO3) once shows excellent properties allied to low cost to obtaining. The
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LIMA, Naiara Arantes. "Caracterização estrutural e magnética do ZnO do sistema ZnO:Mn." Universidade Federal de Alfenas, 2016. https://bdtd.unifal-mg.edu.br:8443/handle/tede/792.

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Foram sintetizadas amostras de ZnO puro e ZnO dopadas com Mn (ZnO:Mn) na forma de pós com tamanho de partícula/grão controlado pelo método dos precursores poliméricos. Os parâmetros do método foram manipulados visando obter amostras com diferentes tamanhos de partículas (entre 60 nm a 800 nm). Tanto o ZnO quanto o ZnO dopado com metais de transição (MT), que é um Óxido Semicondutor Magnético Diluído (OSMD), possuem grande potencial em aplicações na spintrônica. A dependência das propriedades magnéticas com o tamanho de partícula é um aspecto relacionado com a compreensão do comportamento ferro
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Bovo, Laura. "Nanostructured Materials Based on ZnO for Cataltytic, Optical and Magnetic Applications." Doctoral thesis, Università degli studi di Padova, 2011. http://hdl.handle.net/11577/3423214.

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ZnO based materials, such as Zn1-xTMxO (TM = Mn, Co, Cu) nanopowders, were synthesised by a Sol gel route to investigate their properties in three fields: catalysis, optics and magnetism. These materials were characterised by complementary techniques such as X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS) and UV-Vis Spectroscopy. The fine structure and electronic properties of these nanomaterials were studied by X-ray Absorption Spectroscopy (XAS) and Electron Paramagnetic Resonance (EPR). These techniques give site, element and chemical spec
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Kane, Matthew Hartmann. "Investigaton of the Suitability of Wide Bandgap Dilute Magnetic Semiconductors for Spintronics." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16166.

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New semiconductor materials may enable next-generation â spintronicâ devices which exploit both the spin and charge of an electron for data processing, storage, and transfer. The realization of such devices would benefit greatly from room temperature ferromagnetic dilute magnetic semiconductors. Theoretical predictions have suggested that room temperature ferromagnetism may be possible in the wide bandgap semiconductors GaMnN and ZnMnO, though the existing models require input from the growth of high-quality materials. This work focuses on an experimental effort to develop high-quality mate
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Mukherjee, Devajyoti. "Growth and Characterization of Epitaxial Thin Films and Multiferroic Heterostructures of Ferromagnetic and Ferroelectric Materials." Scholar Commons, 2010. http://scholarcommons.usf.edu/etd/3622.

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Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling th
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33

Ebrahimizadeh, Abrishami M. "Carrier Density Dependence of sp-d Exchange in Nanostructured ZnO:Mn Thin Film." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/34907.

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In this work, the nanostructured ZnO:Mn thin films with different Mn concentration (5, 10 and 15 mol%) have been grown on glass substrates at 500°C by the spray pyrolysis technique. The average grain size was estimated about 25 nm using SEM micrographs. The Faraday rotations were determined in applied magnetic fields up to 1.05 T. The highest values of Faraday rotation were observed in the sample with 5 mol% Mn concentration. The carrier density has been calculated from the Faraday rotations and it is observed that the sp-d exchange in magnetic semiconductor is strongly affected by carrie
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34

Chang, Chih-Yuan, and 張智淵. "Investigation of transparent conductive ZnO:Al thinfilms deposited by RF sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/382w29.

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碩士<br>國立中山大學<br>光電工程學系研究所<br>97<br>In this thesis, we focus on the properties of Al-doped ZnO (AZO) thin films for opto-electronic applications. AZO films were prepared by radio-frequency sputtering on silicon and optical glass substrates with 98wt% ZnO and 2wt% Al2O3 alloy target. AZO films were prepared under various deposition parameters (RF power, background pressure, Ar flow, and substrate temperature). The optimal parameters for the conductive and transparent AZO films are power = 100W, pressure = 3mTorr, Ar flow = 5sccm, and substrate temperature 250℃. The film exhibits the resistivity(
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Tsai, Pin Hsiang, and 蔡濱祥. "Characteristics of ZnO:Al Thin Film prepared using DC reactive sputtering deposition." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/40186861892277837035.

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碩士<br>國立成功大學<br>材料科學及工程學系<br>88<br>Aluminum-doped zinc oxide films on corning glass 1737F have been prepared by dc reactive magnetron sputtering from metallic targets with different dopant concentrations and oxygen partial pressures at room temperature. The optical, electrical, surface morphology and structure properties of the sputtered ZnO:Al thin films have been investigated by spectroscopy(UV-VIS), X-ray diffraction, SEM, AES and conductivity measurements. The X-ray diffraction studies revealed that both as-dep and annealed AZO films have (002) preferred orientation with wurtzit
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Su, Tzu-Hsi, and 蘇子熙. "Characteristics of ZnO:Al Thin Film by UV-assisted Pulsed Laser Deposition." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/31493255428312570115.

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碩士<br>國立嘉義大學<br>光電暨固態電子研究所<br>98<br>AZO(Aluminum doped Zinc Oxide, ZnO:Al) and AZO:N thin films grown by conventional and ultraviolet-assisted pulsed laser deposition technique(PLD and UVPLD) on glass substrates were analyzed by XPS, XRD, AFM, four-point probe, Hall effect, CAFM, UV-VIS and elliposmeter. With respect to film grown by conventional PLD under similar conditions but without UV illumination, the UVPLD grown film exhibited better structural, optical, and electrical properties. The studies of XRD indicated that AZO and AZO:N thin films were hexagonal wurtzite type structure with
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Fu, Shin-Jiun, and 傅新鈞. "ZnO:Al TFT Fabricated on Si and Flexible Substrates at Room Temperature." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/89422132301714810912.

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碩士<br>國立交通大學<br>電子研究所<br>100<br>This thesis focuses on ZnO:Al thin film transistors (AZO TFTs) fabricated on Si substrates and flexible substrates using a room-temperature process. Before fabricating the AZO TFT on Si substrates, we first analyzed the physical properties of AZO thin films deposited by DC sputtering with various oxygen flow rates. Then, common-gate AZO TFTs were fabricated with AZO channels deposited by various oxygen flow rates. The best AZO deposition condition with zero oxygen flow rate was chosen to fabricate the bottom-gate AZO TFTs with a high-??ngate insulator. In th
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Yang, Meng-Syuan, and 楊孟璇. "Study of Amorphous ZnO:Al Thin Films by Low-Temperature Sputtering Technique." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/5pt426.

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碩士<br>國立中山大學<br>物理學系研究所<br>97<br>Aluminum doped zinc oxide AZO has been studied for 20 years. It can improve thin films’ thermal stability and transparency in visible range .However AZO is not as good as ITO in conductivity and transparency, that’s why the application of AZO is only limited in few fields. This is because the nature limit of ZnO. Because part of doped Al forms Al2O3 instead of sits on Zn sites, that enhances light and carriers scattering and suppresses the optical transparency and electric conductivity. This study is plane to take advantage of amorphous properties, that may be
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Hsu, You-Gang, and 許佑綱. "Synthesis of ZnO:Al Transparent Conductive Thin Films Using Sol-Gel Method." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/7znn8w.

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碩士<br>國立虎尾科技大學<br>材料科學與綠色能源工程研究所<br>99<br>Tin-doped indium oxide (ITO) deposited by vacuum process with excellent optical and electrical properties have been generally used as transparent conductive oxide thin films. In view of high cost and recycles not easily of vacuum process, zinc oxide films synthesized by wet chemical process is therefore regarded a more suitable candidate to replace ITO. In this work , sol-gel method was used to synthesis transparent aluminum doped zinc oxide (ZnO : Al, AZO) with 450 nm thickness for large scale production of CIGS solar cell. The experimental parame
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"Studies of localized electrical properties of ZnO:Al by scanning probe microscope (SPM)." 2008. http://library.cuhk.edu.hk/record=b5896783.

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Fang, Qianying = 基於掃描探針顯微鏡(SPM)的關於鋁摻雜氧化鋅(ZnO:Al)局域電學性質之研究 / 方倩莹.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2008.<br>Includes bibliographical references (leaves 97-100).<br>Text in English; abstracts in English and Chinese.<br>Fang, Qianying = Ji yu sao miao tan zhen xian wei jing (SPM) de guan yu lü shan za yang hua xin (ZnO:Al) ju yu dian xue xing zhi zhi yan jiu / Fang Qianying.<br>Chapter I. --- Abstract<br>Chapter II. --- Acknowledgement<br>Chapter III. --- Table of contents<br>Chapter IV. --- List of figures<br>Chapter V. --- List of tables<br>Chapter 1 --- Introduction<br>Cha
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Yu, Yu-Chieh, and 游裕傑. "Characterizations of Transparent Conductive ZnO:Al (AZO) Thin Films by RF Magnetron Sputtering." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/23106981890979722136.

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碩士<br>國立勤益科技大學<br>機械工程系<br>98<br>In this study, AZO thin films were deposited on glass substrates by r.f. magnetron sputtering. The working pressure was fixed at 2 mtorr, film thickness was 500 nm, and the working distance was 7 cm. The microstructure, electrical, and optical properties were evaluated by X-ray photoelectron spectroscopy, X-ray diffraction, FE-SEM, AFM, Hall measurement, and optical transmission spectroscopy. The results suggest that the qualities of AZO films were affected by sputtering power, substrate temperature and atmosphere of sputtering. A high transmittance over 90 % a
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Yu-Wei, Lan, and 藍御維. "An amperometric glucose biosensor based on ZnO:Al thin film modified Au electrode." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/61571342027353548952.

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碩士<br>國立雲林科技大學<br>光學電子工程研究所<br>97<br>An amperometric glucose biosensor was successfully constructed by sputtering deposition of aluminum doped zinc oxide (ZnO:Al, AZO) thin film on Au electrode, and then by layering-on glucose oxidase. Atomic force microscopy and field-emission scanning electron microscopy were used to characterize the nano-structure of AZO films. In addition, the electrochemical characteristics of the modified electrode were analyzed by cyclic voltammetry and electrochemical impedance spectroscopy. Due to the highly reactive surface area and enhanced electron transfer of the
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Lu, Chih-Ming, and 盧志銘. "Characterization and Applications of ZnO:Al (AZO) Thin Films Prepared by Magnetron Sputtering." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/02672232644613703632.

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碩士<br>國立中興大學<br>材料工程學系所<br>95<br>Transparent conducting oxide (TCO) is an important material for many photoelectronic devices. In this study, transparent conducting ZnO thin films doped with Al (ZnO:Al) were prepared by simultaneously RF magnetron sputtering of ZnO target and DC magnetron sputtering of Al target. Post annealing of the ZnO:Al (AZO) films were carried out under Ar, N2, O2, and forming gases at temperatures ranging from 300 to 500℃. Optical and electrical properties of the AZO films were measured by an UV/Visible spectrophotometer and four-point probe and Hall effect, respectivel
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Lin, Chun-fu, and 林俊甫. "Fabrication of large-area ZnO:Al nanostructure arrays by electrodeposition and their properties." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/61765421268372632135.

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碩士<br>國立中央大學<br>化學工程與材料工程研究所<br>99<br>In this study, ZnO:Al ( AZO ) transparent conducting oxide thin films were deposited on glass by a RF sputtering system to serve as the seed layer for the electrodeposition of AZO nanorods. Large-area AZO nanorod arrays were prepared in the optimal electrodeposition conditions. The microstructue, surface morphology, and physical properties of the AZO nanorods have been investigated. Furthermore, bowl-like AZO nanorod structures were successfully fabricated on AZO films by using nanosphere lithography combined with the electrodeposition technique. The size
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SunPinWang and 王淑屏. "Characterization of Transparent Conductive ZnO:Al (AZO) Thin Films by DC Magnetron Sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/32273132779567636499.

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碩士<br>國立勤益科技大學<br>機械工程系<br>97<br>Aluminum-doped zinc oxide (AZO) films have their advantages due to the high conductivity, high transparency, cheap value, good stability and absence of toxicity. AZO films have many applications such as electro-optical devices, plastic liquid crystal display devices, transparent electromagnetic shielding materials and transparent electrode of thin film solar cell devices. In this study, AZO films were prepared by DC magnetron sputtering on glass substrates with specifically designed AZOY target. Systematic study on dependence of working pressure and substrate t
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Chen, Bo-chun, and 陳柏君. "The Study of Recrystallization for Amorphous ZnO:Al Thin Film by Laser Annealing." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/7zdx28.

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碩士<br>國立中山大學<br>物理學系研究所<br>97<br>The goal of this paper is to study the mechanism that may lead to the change of physic properties by annealed amorphous AZO samples, that were grown by RF magnetron sputtering, by an excimer laser or a tube furnace or both. By using of the Taguchi Methods, which is in expected to be a fast and efficiency method, to search the best process parameters and to understand what mechanism stood behind the change of these parameters. We found that polycrystalline AZO films may be formed very easily when were grown at a temperature higher than 150K. Amorphous AZO films
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Kuo, Tai-Chao, and 郭泰照. "Characteristics of Transparent Conducting ZnO:Al Thin Films Prepared by Reactive RF Magnetron Sputtering." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/39267349818850566609.

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碩士<br>正修科技大學<br>電子工程研究所<br>94<br>In this study, the reactive rf magnetron sputtering was used to deposit Aluminum-doped zinc oxide (AZO) thin films on corning 7059 glass substrate at room temperature. The thermal treatment procedure was carried out to improve the electrical characteristics and optical characteristics of AZO thin films. The physical characteristics of AZO thin films with different post annealing process were obtained by the analyses of XRD and SEM. The conductivity properties of AZO thin films with different post annealing process were obtained by the analyses of four-point pro
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Liu, Zheng-Yan, and 劉政諺. "The study of ZnO:Al transparent electrode on the performance of CIGS solar cells." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/63435226539264310911.

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碩士<br>中華技術學院<br>電子工程研究所碩士班<br>98<br>Aluminum doped zinc oxide (Aluminum doped zinc oxide，AZO) with good conductivity, high transparency, excellent chemical stability and price relative to production of indium tin oxide (tin-doped indium oxide, ITO) cheap, non-toxic, raw materials are abundant and easy to implement a large area coating, in the production of CIGS solar cell which is expected to become a new generation of transparent conductive material. RF SPUTTER is used to deposite AZO on SLG substrates, then combined use of Hall-effect measurement, SEM, AFM, XRD to provide useful data that ar
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Chien, Yu-Tsang, and 簡毓蒼. "A study on the wet etching process of AZO(ZnO:Al)transparent conducting film." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/56879243730170013917.

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碩士<br>國立彰化師範大學<br>機電工程學系<br>94<br>The purpose of this study is to investigate the effect of wet etching process on the AZO(ZnO:Al) film. RF magnetron sputtering system was used to deposit AZO thin film on 1737F glass substrates. Sputtering parameters were adjusted and heat treatments were employed to obtain the optimal that yield the suitable optoelectronic properties. In order to understand the effect of etching process on AZO film, the etching process were influenced by etchant temperature and concentration, etchant and photoresist were carried out with TMAH and AZ4620. The etching rate, dep
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Jheng, Ciao-Ren, and 鄭僑人. "Transparent conductive ZnO:Al films growth and application on silicon thin-film solar cells." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/25025113901883213481.

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