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Journal articles on the topic 'ZnO based Schottky Thin film devices'

Author: Grafiati

Published: 6 September 2023

Last updated: 31 July 2025

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1

R. Sabity, Mowj, and Ghusoon M. Ali. "PERFORMANCE ANALYSIS OF PD/ZNO BASED FLEXIBLE UV MSM PHOTODETECTORS." Journal of Engineering and Sustainable Development 26, no. 5 (2022): 98–104. http://dx.doi.org/10.31272/jeasd.26.5.9.

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Flexible electronics and optoelectronics devices attract further attention in recent years. In this paper, we present the fabrication and photodetection properties of a flexible metal-semiconductor-metal UV photodetector based on a thin ZnO film with Pd Schottky electrodes. The active ZnO layer was created using a hydrothermal method on ITO/PET flexible substrates. Palladium employed as back-to-back Schottky contacts. Metal masks are designed and used to deposit palladium via thermal evaporation. To demonstrate the impact of ZnO on flexible substrates, the structural, optical, and electrical c

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Zhang, Teng-Fei, Guo-An Wu, Jiu-Zhen Wang, et al. "A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction." Nanophotonics 6, no. 5 (2016): 1073–81. http://dx.doi.org/10.1515/nanoph-2016-0143.

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AbstractIn this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure

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3

Zhang, Zhi Kun, Ji Ming Bian, and Xiao Qiang Kou. "A Novel ZnO-Based Graphite-Insulator-Semiconductor Diode for Transferable Unipolar Electronic Devices." Advanced Materials Research 710 (June 2013): 29–32. http://dx.doi.org/10.4028/www.scientific.net/amr.710.29.

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In this paper, a novel ZnO-based graphite-insulator-semiconductor (GIS) diode was fabricated on graphite substrate by radio frequency (rf) magnetron sputtering. A SiO2 thin film was used as the insulator layer grown by electron beam evaporation technique. The measurement of current-voltage of the ZnO-based GIS diode showed a Schottky rectifying diode characteristic with a threshold voltage of 5.2 V and a poor leakage current of ~10-3 A under a reverse bias condition. An interesting negative capacitance phenomenon was also observed from the GIS diode. The successful fabrication of ZnO-based GIS

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4

Shen, Mei, Triratna P. Muneshwar, Ken Cadien, Ying Y. Tsui, and Doug Barlage. "Optimization of Copper Schottky Contacts on Nanocrystalline ZnO thin films by Atomic Layer Deposition." MRS Advances 1, no. 50 (2016): 3421–27. http://dx.doi.org/10.1557/adv.2016.357.

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ABSTRACTContact metallization is an essential obstacle for utilizing low temperature achievable polycrystalline ZnO in any discrete devices and integrated circuits. To develop ZnO based semiconductor devices with advanced feature of flexibility, transparency and compatibility with low temperature processing, rectifying junctions must be fully developed. In this work, nanoscale polycrystalline ZnO thin films are fabricated with via low temperature (&lt;200 °C) by atomic layer deposition (ALD). A vertical structure of bottom Schottky metallized diode is developed with copper (Cu) sputtered i

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5

Zafar, Mubeen, Muhammad Naeem Awais, Muhammad Asif, Amir Razaq, and Gul Amin. "Fabrication and characterization of piezoelectric nanogenerator based on Al/ZnO/Au structure." Microelectronics International 34, no. 1 (2017): 35–39. http://dx.doi.org/10.1108/mi-11-2015-0092.

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Purpose The purpose of this research work is to harvest energy using the piezoelectric properties of ZnO nanowires (NW). Fabrication and characterization of the piezoelectric nanogenerator (NG), based on Al/ZnO/Au structure without using hosting layer, were done to harvest energy. The proposed method has full potential to harvest the cost-effective energy. Design/methodology/approach ZnO NW were fabricated between the thin layers of Al- and Au-coated substrates for the development of piezoelectric NG. To grow ZnO NW, ZnO seed layer was prepared on the Al-coated substrate, and then ZnO NW were

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6

Zhao, Shuaitongze, and Shifeng Xu. "Semiconductor Photoanode Photoelectric Properties of Methanol Fuel Cells." Journal of Nanoelectronics and Optoelectronics 16, no. 1 (2021): 72–79. http://dx.doi.org/10.1166/jno.2021.2906.

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One-dimensional TiO2, ZnO, and Fe2O3 nanorod arrays are selected as the photocatalytic methanol fuel cell photoanodes, and a greenhouse catalytic methanol fuel cell device is designed. With the photo-generated holes' participation in fuel molecules' oxidation in the semiconductor electrode, chemical energy is converted into electric energy. Firstly, with pot-doped tin dioxide (TRS) as the substrate, TiO2, ZnO, and Fe2O3 nanorod arrays are prepared by hydrothermal method. TiO2 and ZnO are excellent photoelectric catalytic materials with similar energy band capability and strong separation capab

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7

Aghassi-Hagmann, Jasmin. "(Invited) Solution-Processable Materials and Structuring Processes for Electrochemically Gated Thin Film Devices." ECS Meeting Abstracts MA2024-01, no. 31 (2024): 1545. http://dx.doi.org/10.1149/ma2024-01311545mtgabs.

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Printed and flexible electronics enable interesting novel applications in the fields of sensors [1], bioelectronics [2], and security applications [3]. Most of them gain their functionality from a layered structure composed of different materials that interact with each other. For semiconducting layers, organic and inorganic materials can be used; in this regard, the respective functional materials need to be formulated into inks that are then printed on various substrates. The structuring process of printing is a complex process in which many chemical and physical process parameters need to b

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8

Shen, Mei, Amir Afshar, Manisha Gupta, et al. "Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD." MRS Proceedings 1635 (2014): 127–32. http://dx.doi.org/10.1557/opl.2014.49.

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ABSTRACTAn electrical and analytical study was carried out to investigate TiW/ZnO Schottky contacts with 30 nm ZnO thin film layers deposited by pulsed laser deposition (PLD), plasma enhanced atomic layer deposition (PEALD), and thermal atomic layer deposition (TALD). Devices with ZnO layer deposited by TALD exhibit approximately linear behavior in their I-V measurements. However, both devices with ZnO layers deposited by PEALD and PLD behaved like Schottky rectifiers with barrier heights between TiW and ZnO of 0.51 eV and 0.45 eV respectively and ideality factors of 2.0 and 2.3 respectively.

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9

Jiang, Dayong, Jiying Zhang, Youming Lu, et al. "Ultraviolet Schottky detector based on epitaxial ZnO thin film." Solid-State Electronics 52, no. 5 (2008): 679–82. http://dx.doi.org/10.1016/j.sse.2007.10.040.

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10

Ginting, M., and J. D. Leslie. "Preparation and electrical properties of heterojunctions of ZnO on Zn3P2 and CdTe." Canadian Journal of Physics 67, no. 4 (1989): 448–55. http://dx.doi.org/10.1139/p89-080.

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"Heterojunctions" have been fabricated by the reactive evaporation of thin film n-type ZnO onto p-type single crystal Zn3P2, polycrystalline films of Zn3P2, and single crystal CdTe. The photovoltaic response of the n-ZnO – single crystal p-CdTe devices was good, that of the n-ZnO – single crystal p-Zn3P2 devices was poor, and that of the n-ZnO – p-Zn3P2 polycrystalline film devices was nonexistent. The ideality factor n of all devices studied was greater than two. On the basis of 1/C2 vs. V results, the n-ZnO – single crystal p-Zn3P2 devices behaved most like Schottky barrier devices, whereas

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11

Trinchi, A., W. Wlodarski, Sandro Santucci, et al. "Microstructural Characterisation of RF Magnetron Sputtered ZnO Thin Films on SiC." Solid State Phenomena 99-100 (July 2004): 123–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.123.

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The microstructural characterization of r.f. magnetron sputtered ZnO thin films deposited on 6H-SiC is presented with a comprehensive investigation of their properties as a function of annealing temperature and film thickness. These structures, with some modifications, are utilised as Schottky diode hydrogen gas sensors and Surface Acoustic Wave (SAW) devices.

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12

KESKENLER, E. F., and M. HAİDAR. "SCHOTTKY DIODE FABRICATION VIA COLD SUBSTRATE EVAPORATED Ag ON SOL-GEL DERIVED ZnO ULTRA-THIN FILMS FOR SEMICONDUCTOR DEVICES." Journal of Ovonic Research 16, no. 5 (2020): 309–21. http://dx.doi.org/10.15251/jor.2020.165.309.

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ZnO thin films were grown on glass and SnO2 substrate by using Sol-gel method with a simple, low cost-temperature and high controlled away. ZnO thin films were contacted with Ag in two different temperatures at 200K (cold substrate) and 300K (room temperature) by PVD Cold Substrate Method. Characterization of the obtained films and Schottky diodes studied by XRD, SEM, Optical and Electrical measurements. The average particle size and film thickness of the films were calculated as ~25 and ~300nm. Bandgap of the ZnO films coated on different substrates was calculated to be around 3.29-3.31 eV. P

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13

Ali, Ghusoon M., Ahmed K. Khalid, and Salah M. Swadi. "Nanoflower ZnO thin-film grown by hydrothermal technique based Schottky diode." Journal of Semiconductors 41, no. 10 (2020): 102103. http://dx.doi.org/10.1088/1674-4926/41/10/102103.

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14

Xi, Jun Hua, Xue Ping Chen, Hong Xia Li, Jun Zhang, and Zhen Guo Ji. "Effects of Film Thickness on Resistive Switching Characteristics of ZnO Based ReRAM." Advanced Materials Research 721 (July 2013): 194–98. http://dx.doi.org/10.4028/www.scientific.net/amr.721.194.

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ZnO thin films were deposited on heavily doped silicon wafer by DC magnetron sputtering and the Cu electrodes were evaporated on ZnO/ n+-Si by electric beam evaporation to get Cu/ZnO/n+-Si resistive random access memory (ReRAM). The forming, reset and set processes of the devices were investigated using filamentary model. The effects of film thickness on the crystalline structure of the ZnO thin films and the resistive switching characteristics of the fabricated devices were investigated. The diffraction peak intensity and crystal size increased with increasing film thickness, which shows bett

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15

Yang, X., C. Wang, C. Zhao, et al. "Fabrication of ZnO Thin Film Transistors Based on the Substrate of Glass." Key Engineering Materials 428-429 (January 2010): 501–4. http://dx.doi.org/10.4028/www.scientific.net/kem.428-429.501.

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In our paper, we induced the process of ZnO based thin film transistors (ZnO-TFTs) fabricated on the substrate of glass. The photolithographic plate designed for using in the ZnO-TFT devices fabrication process was shown in our paper. The ZnO-TFT devices were fabricated successfully, the Ion/off ratio is ~104.

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16

Singh, Mandeep, Gerardo Palazzo, Giuseppe Romanazzi, et al. "Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer." Faraday Discuss. 174 (2014): 383–98. http://dx.doi.org/10.1039/c4fd00081a.

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Among the metal oxide semiconductors, ZnO has been widely investigated as a channel material in thin-film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution-processed techniques. Herein, we report a solution-processable ZnO-based thin-film transistor gated through a liquid electrolyte with an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate-buffered saline (PBS) are discussed in terms of the operation stability and

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17

Shan, Yue, Yan Hong Wu, Dong Xing Wang, et al. "The Preparation and Characteristics Analysis of ZnO/Ni/ZnO Schottky Junction TFTs." Advanced Materials Research 981 (July 2014): 834–37. http://dx.doi.org/10.4028/www.scientific.net/amr.981.834.

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Using radio frequency magnetron sputtering deposition deposit ZnO films on SiO2glass, and prepare vertical structure ZnO-based thin film transistor. By means of measurement, obtain the static output characteristics, the output current can achieve the order of milliampere, get the transfer characteristics of ZnO TFTs; transconductance which get the largest value gm=0.0061S when source-drain voltage VDS=3V, source-gate VGS=0.4V; output resistance and voltage amplification coefficient, the smallest voltage amplification factor is μ=1.16056,still have voltage amplification effect.

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18

Dawka, Sahil, Pengjun Duan, Raju Sapkota, and Chris Papadopoulos. "Thin Film Photodetectors Based on Zinc Oxide Nanoinks." ECS Meeting Abstracts MA2022-01, no. 31 (2022): 1329. http://dx.doi.org/10.1149/ma2022-01311329mtgabs.

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Zinc oxide (ZnO) has many useful properties for electronics and optoelectronics including wide band gap, large exciton binding energy, low-cost, ease of processing and availability [1]. This has led to increased interest and development of thin film electronics, transparent conductors, solar cells, light-emitting diodes, lasers, photodetectors and various sensors based on ZnO materials [2, 3]. The high surface areas and tunable properties of ZnO nanostructures make them particularly suitable for applications such as sensing and photonic devices [4, 5]. In this work, we present results on nanos

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19

Li, Hong Xia, Dong Dong Shen, Wei Qing Ke, Jun Hua Xi, Zhe Kong, and Zhen Guo Ji. "Fabrication and Characterization of Transparent ZnO Film Based Resistive Switching Devices." Key Engineering Materials 609-610 (April 2014): 565–70. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.565.

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In this paper, ZnO thin films were prepared on ITO conductive glass by direct current magnetron sputtering and the Cu electrodes were evaporated on ZnO/ITO by electric beam evaporation to get transparent Cu/ZnO/ITO resistive random access memory. The crystal structure and surface morphology were investigated by X-ray diffraction and atomic force microscopy, respectively. The transmittance spectra of ZnO/ITO in the visible region were measured by UV-VIS spectroscopy. The resistive switching characteristics of the fabricated devices were investigated by the voltage sweeping method, which showed

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20

Hernandez-Como, N., A. Rodriguez-Lopez, F. J. Hernandez-Cuevas, et al. "Current–voltage–temperature characteristics of PEDOT:PSS/ZnO thin film-based Schottky barrier diodes." Semiconductor Science and Technology 31, no. 11 (2016): 115007. http://dx.doi.org/10.1088/0268-1242/31/11/115007.

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21

M. Ali, Ghusoon, and P. Chakrabarti. "Thermal Stability of Sol-Gel Deposited Thin Film Zno-Based Schottky Ultraviolet Photodetectors." Engineering and Technology Journal 32, no. 4B (2014): 720–28. http://dx.doi.org/10.30684/etj.32.4b.12.

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22

Yılmaz, K., M. Parlak, and Ç. Erçelebi. "Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices." Semiconductor Science and Technology 22, no. 12 (2007): 1268–71. http://dx.doi.org/10.1088/0268-1242/22/12/004.

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23

Singh, Budhi, and Subhasis Ghosh. "Highly Conducting Gallium-Doped ZnO Thin Film as Transparent Schottky Contact for Organic- Semiconductor-Based Schottky Diodes." Journal of Electronic Materials 44, no. 8 (2015): 2663–69. http://dx.doi.org/10.1007/s11664-015-3783-8.

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24

Dai, Zhen Qing, Bing Hui, and Ya Fei Zhang. "A Simple and Sufficient Method to Fabricate ZnO Nanowire Thin-Film Transistors." Advanced Materials Research 335-336 (September 2011): 451–54. http://dx.doi.org/10.4028/www.scientific.net/amr.335-336.451.

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Large-scale fabrication of ZnO nanowire (NW) based devices with a low cost process is a key issue in practical application. In this paper, we report a simple and sufficient self-assembly process to prepare highly dense, uniform ZnO NW films. In this process, the NWs are modified with the aminopropyltriethoxy silane (APTES) to form the positively charged amine-terminated layer, so they are adsorbed on negatively charged SiO2/Si substrates to form ZnO NW films by the electrostatic interaction in aqueous solution. Nanowire thin-film transistors (NW-TFTs) based on the prepared ZnO NW films are fab

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25

Luo, Jack K., Y. Q. Fu, Greg Ashley, and Williams I. Milne. "Integrated ZnO Film Based Acoustic Wave Microfluidics and Biosensors." Advances in Science and Technology 67 (October 2010): 49–58. http://dx.doi.org/10.4028/www.scientific.net/ast.67.49.

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Lab-on-a-chip (LOC) is one of the most important microsystems with promising applications in microanalysis, drug development and diagnosis, etc. We have been developing a LOC biodetection system using acoustic wave as a single actuation mechanism for both microfluidics and biosensing using low cost piezoelectric ZnO film. Surface acoustic waves (SAW) coupled into the liquid will induce acoustic streaming, or move the droplet on the surface. These have been utilized to make SAW-based micropumps and micromixers which are simple in structure, easy to fabricate, low cost, reliable and efficient. S

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26

Neaime, Chrystelle, Fabien Grasset, and Tangi Aubert. "Band-Gap Engineering Based on Ti@ZnO Nanocolloids: Tunable Optical Properties." Key Engineering Materials 617 (June 2014): 161–65. http://dx.doi.org/10.4028/www.scientific.net/kem.617.161.

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One of the largest application areas of sol-gel chemistry is thin-film preparation. Using this approach, we started to synthesize M@ZnO colloidal solutions for the preparation of functional thin films. ZnO is a wide band-gap (3.37 eV) semiconductor with large exciton binding energy. In the bulk or in nanosized form, it could be used in a wide range of applications such as UV light emitters, spin functional devices, gas sensors, transparent electronics or surface acoustic wave devices. Since recently, the preparation of innovative functional M@ZnO materials by doping or functionalizing nanocoll

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27

Iqbal, Tahir, M. Irfan, Shahid M. Ramay, Hamid M. Gaithan, Asif Mahmood, and Murtaza Saleem. "Investigations on ZnO/polymer nanocomposite thin film for polymer based devices." Materials Research Express 6, no. 7 (2019): 075322. http://dx.doi.org/10.1088/2053-1591/ab1316.

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T.Armoot, Shahad, and Ghusoon M. Ali. "NANORODS ZnO THIN FILM GROWN BY HYDROTHERMAL METHOD BASED PLANAR AND VERTICAL PD/ZnO SCHOTTKY DIODE CONFIGURATIONS." Journal of Engineering and Sustainable Development 24, special (2020): 199–205. http://dx.doi.org/10.31272/jeasd.conf.1.22.

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29

Kumar, Manoj, Hakyung Jeong, and Dongjin Lee. "Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface." RSC Advances 7, no. 44 (2017): 27699–706. http://dx.doi.org/10.1039/c7ra03460a.

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Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

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30

Cardarilli, Gian Carlo, Gaurav Mani Khanal, Luca Di Nunzio, Marco Re, Rocco Fazzolari, and Raj Kumar. "Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device." Electronics 9, no. 2 (2020): 287. http://dx.doi.org/10.3390/electronics9020287.

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An oxygen-rich ZnO-reduced graphene oxide (rGO) thin film was synthesized using a photo-annealing technique from zinc precursor (ZnO)–graphene oxide (GO) sol–gel solution. X-ray diffraction (XRD) results show a clear characteristic peak corresponding to rGO. The scanning electron microscope (SEM) image of the prepared thin film shows an evenly distributed wrinkled surface structure. Transition Metal Oxide (TMO)-based memristive devices are nominees for beyond CMOS Non-Volatile Memory (NVRAM) devices. The two-terminal Metal–TMO (Insulator)–Metal (MIM) memristive device is fabricated using a syn

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31

Kumar, Ashish, Arathy Varghese, Shriniwas Yadav, Mahanth Prasad, Vijay Janyani, and R. P. Yadav. "Influence of Temperature on Graphene/ZnO Heterojunction Schottky Diode Characteristics." Journal of Nanoscience and Nanotechnology 21, no. 5 (2021): 3165–70. http://dx.doi.org/10.1166/jnn.2021.19084.

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The paper reports development of graphene/ZnO heterojunction Schottky diode structure and its structural and electrical characterization. Graphene is grown on copper substrate using chemical vapor deposition (CVD) and transferred on flexible substrate (indium Tin Oxide coated PET). The grown thin layer is characterized using scanning electron microscopy and Raman spectroscopy which confirm uniformity and high-quality graphene layer. The sputtered ZnO is deposited and characterized which confirms c-axis (002) orientation and uniform growth of ZnO film. Silver (Ag) as a top electrode has been de

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Das, Arpita, Alakananda Das, Sayantani Sen, and Anirban Bhattacharyya. "A Novel Method for Spatially-selective ZnO Thin Film Growth by the Sol-Gel Technique." Journal of Condensed Matter 2, no. 02 (2025): 37–42. https://doi.org/10.61343/jcm.v2i02.69.

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Sol-gel deposition of ZnO using the dip-coating method typically generate uniform large area thin films on various substrates, and individual devices are created by a subsequent etching step. In this paper a method for the spontaneous formation of islands of ZnO aligned to existing electrode structures has been presented where thin films and nanostructures of ZnO were sequentially deposited on patterned substrates by sol-gel and vapor-liquid-solid processes. The results indicate spontaneous formation of spatially-selective structures of ZnO which avoid proximity to electrode edges. The morphol

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Liu, Y., J. Yu, and P. T. Lai. "Investigation of WO3/ZnO thin-film heterojunction-based Schottky diodes for H2 gas sensing." International Journal of Hydrogen Energy 39, no. 19 (2014): 10313–19. http://dx.doi.org/10.1016/j.ijhydene.2014.04.155.

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Dawka, Sahil, Pengjun Duan, Shreyasi Maitra, Raju Sapkota, and Chris Papadopoulos. "Solution-Processed Zinc Oxide Nanoparticles for Thin Film Optoelectronic Neuromorphic Devices." ECS Meeting Abstracts MA2024-02, no. 36 (2024): 2531. https://doi.org/10.1149/ma2024-02362531mtgabs.

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Metal oxide nanostructures are an important class of thin film electronic materials well-suited for applications, which can exhibit large changes in their electrical and optical properties upon exposure to different external stimuli, gas and/or chemical environments at their surfaces [1, 2]. Zinc oxide (ZnO) in particular, has been garnering increased interest due to its unique combination of properties that are advantageous for electronics and optoelectronics such as wide band gap, large exciton binding energy, low-cost, ease of processing and availability [3]. This has led to the development

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Raj, V. Bhasker, Harpreet Singh, A. Theodore Nimal, M. U. Sharma, Monika Tomar, and Vinay Gupta. "Utilization of Mass and Elastic Loading in Oxide Materials Based SAW Devices for the Detection of Mustard Gas Simulant." Advanced Materials Research 488-489 (March 2012): 1558–62. http://dx.doi.org/10.4028/www.scientific.net/amr.488-489.1558.

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The properties (mass loading and elastic changes) of different oxide materials (ZnO, TeO2, SnO2, TiO2) in thin film form has been explored for the enhanced detection of DBS (di butyl sulphide), a simulant of sulphur mustard gas. All the four oxide materials are deposited on to the surface of SAW (Surface Acoustic Wave) devices to impart sensitivity and selectivity. ZnO and SnO2 films are crystalline whereas TiO2 and TeO2 films are amorphous in nature. All the films are transparent with transparency greater than 75 % in the visible region. The SAW devices coated with different oxide materials w

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Kumar, Ashish, Arathy Varghese, and Vijay Janyani. "Fabrication of graphene–ZnO heterostructure-based flexible and thin platform-based UV detector." Journal of Materials Science: Materials in Electronics 33, no. 7 (2021): 3880–90. http://dx.doi.org/10.1007/s10854-021-07578-8.

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AbstractThis work presents the performance evaluation of Graphene/ZnO Schottky junctions grown on flexible indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrates. The fabricated structures include chemical vapour deposition grown graphene layer on ITO-coated PET substrates. Polymethyl methacrylate assisted transfer method has been employed for the successful transfer of graphene from Cu substrate to PET. The smaller D-band intensity (1350 cm−1) compared to G-band (1580 cm−1) indicates good quality of carbon lattice with less number of defects. High-quality ZnO has been depos

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Ma, Hong Yu, En Jie Ding, and Zeng Liang Shi. "ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes." Key Engineering Materials 480-481 (June 2011): 605–8. http://dx.doi.org/10.4028/www.scientific.net/kem.480-481.605.

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The fabrication of zinc oxide （ZnO）based thin-film field-effect transistors (TFTs) on p-Si substrates by rf magnetron sputtering, photolithography and wet etching processes was presented. Bottom-gate-type thin film transistors using ZnO as an active channel layer were constructed, and their properties were characterized by atomic force microscope, X-ray diffraction and I-V measurements. The fabricated ZnO transistors exhibited enhancement mode characteristics with the on-to-off current ratio of ∼105 and the threshold voltage of 10V. It is believed that the ZnO TFTs fabricatd by the simple and

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Dan, Wen Chao, Ya Dong Jiang, Hui Ling Tai, et al. "The Formaldehyde OTFT Sensor Based on the Airbrushed P3HT/ZnO Composite Thin Film." Key Engineering Materials 531-532 (December 2012): 400–403. http://dx.doi.org/10.4028/www.scientific.net/kem.531-532.400.

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The pure conducting polymer P3HT film is less sensitive to the formaldehyde (HCHO), and the pure ZnO film needs a high temperature to militate the HCHO, as a result, the P3HT/ZnO composite was fabricated on the organic thin film transistor (OTFT) by spraying to detect the HCHO at room temperature, the electrical properties and sensing properties of all the prepared OTFT devices were measured by Keithley 4200-SCS source measurement unit. What is more, the effect of different P3HT/ZnO composite masses on the response of sensors were tested, all the sensors showed a remarkable response to HCHO, a

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Yadav, Aniruddh Bahadur, Amritanshu Pandey, Divya Somvanshi, and Satyabrata Jit. "Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodiodes." IEEE Transactions on Electron Devices 62, no. 6 (2015): 1879–84. http://dx.doi.org/10.1109/ted.2015.2423322.

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Ali, Ghusoon M., and Parthasarathi Chakrabarti. "Fabrication and characterization of thin film ZnO Schottky contacts based UV photodetectors: A comparative study." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30, no. 3 (2012): 031206. http://dx.doi.org/10.1116/1.3701945.

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Roy, S., S. Das, and C. K. Sarkar. "Investigation of nanostructured Pd–Ag/n-ZnO thin film based Schottky junction for methane sensing." International Nano Letters 6, no. 3 (2016): 199–210. http://dx.doi.org/10.1007/s40089-016-0187-6.

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Zhang, Jiawei, Josh Wilson, and Aimin Song. "(Invited, Digital Presentation) Oxide TFTs Based on Semiconductors and Semimetals." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1263. http://dx.doi.org/10.1149/ma2022-02351263mtgabs.

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Oxide semiconductors have opened a new era for large-area, flexible and transparent applications. Despite the progresses, a bottleneck issue of oxide thin-film transistors (TFTs) is the instability either under bias stress or when used as a current source. Furthermore, the carrier mobility and current driving capability need to be improved for high-spec displays. It is still hugely challenging to overcome both issues using the conventional device structure and oxide semiconductor materials. Here, we review our recent work on novel oxide TFTs that show a few desirable properties. Rather than us

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Kamiya, Toshio, and Masashi Kawasaki. "ZnO-Based Semiconductors as Building Blocks for Active Devices." MRS Bulletin 33, no. 11 (2008): 1061–66. http://dx.doi.org/10.1557/mrs2008.226.

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AbstractThis article provides a review of materials and devices of wide-bandgap oxide semiconductors based on ZnO, highlighting the nature of the chemical bond. The electronic structures of these materials are very different from those of conventional covalently bonded semiconductors, owing to the ionic nature of the chemical bonds. Therefore, one needs to design and optimize fabrication processes and structures of active devices containing such materials, taking into account the peculiar defect formation mechanisms. A variety of active devices that have clear advantages over the conventional

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Ahmed Ali, Amal Mohamed, Naser M. Ahmed, Norlaili A. Kabir, et al. "Investigation of X-ray Radiation Detectability Using Fabricated ZnO-PB Based Extended Gate Field-Effect Transistor as X-ray Dosimeters." Applied Sciences 11, no. 23 (2021): 11258. http://dx.doi.org/10.3390/app112311258.

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A new design of the MOSFET dosimeter is being developed in a different study to measure the dose delivered to the tissue layers. Development of zinc oxide-Lead (ZnO-Pb) of different thicknesses fabricated by chemical bath deposition were investigated to study their sensitivity following irradiation using a low absorbed dose that can be used in diagnostic and interventional radiology (9, 36.5, and 70 mGy) and high absorbed dose (1, 5, and 10 Gy) of X-ray. The morphology and structure of the as-prepared films were analysed using FESEM and XRD measurements. The device relies on sensing the change

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Kaneko, Masao, Hirohito Ueno, and Junichi Nemoto. "Schottky junction/ohmic contact behavior of a nanoporous TiO2 thin film photoanode in contact with redox electrolyte solutions." Beilstein Journal of Nanotechnology 2 (February 28, 2011): 127–34. http://dx.doi.org/10.3762/bjnano.2.15.

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The nature and photoelectrochemical reactivity of nanoporous semiconductor electrodes have attracted a great deal of attention. Nanostructured materials have promising capabilities applicable for the construction of various photonic and electronic devices. In this paper, a mesoporous TiO2 thin film photoanode was soaked in an aqueous methanol solution using an O2-reducing Pt-based cathode in contact with atmospheric air on the back side. It was shown from distinct photocurrents in the cyclic voltammogram (CV) that the nanosurface of the mesoporous n-TiO2 film forms a Schottky junction with wat

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Cheng, Chien Chuan, Re Ching Lin, Wei Tsai Chang, Ying Chung Chen, Kuo Sheng Kao, and Sin Liang Ou. "Shear Mode ZnO Thin Film Applied in FBAR Sensor." Advanced Materials Research 201-203 (February 2011): 718–21. http://dx.doi.org/10.4028/www.scientific.net/amr.201-203.718.

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In this study, platinum (Pt) and zinc oxide (ZnO) had been adopted as electrode and piezoelectric layer of an FBAR sensor. Based on the off-axis deposition of the ZnO film, longitude and shear modes resonance phenomenon can be approached to sensitive in air and liquid respectively. The preferred orientation and crystal properties of the ZnO film were evaluated by X-ray diffraction (XRD) using a SHIMADZU XRD-6000 with Cu Kαradiation. The crosssections of the grain structures of ZnO films were observed by scanning electron microscopy (SEM) (Philips XL40 FESEM). The electrical resistance of the b

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Chen, Jinkai, Wenbo Wang, Weipeng Xuan, et al. "Flexible surface acoustic wave broadband strain sensors based on ultra-thin flexible glass substrate." MRS Advances 1, no. 21 (2016): 1519–24. http://dx.doi.org/10.1557/adv.2016.110.

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ABSTRACTFlexible SAW devices based on ZnO piezoelectric thin film deposited on ultra-thin flexible glass were fabricated and their performances as a strain sensor have been investigated. The XRD and AFM characterizations showed that the ZnO layers have good crystal quality and smooth surface. The flexible SAW devices show excellent strain sensitivity which increases from ∼87 to ∼137 Hz/με with the increasing ZnO thickness, and the sensors can withstand strains up to ∼3000 με, 4∼6 times larger than those of SAW strain sensors on rigid substrates. The sensors exhibited remarkable stability up to

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Putri, Nur Ajrina, Cuk Imawan, and Vivi Fauzia. "ZnO Thin Films Prepared Using the Ultrasonic Spray Pyrolysis Method for High Performance Metal Oxides-Based Photoconductors." Key Engineering Materials 860 (August 2020): 274–81. http://dx.doi.org/10.4028/www.scientific.net/kem.860.274.

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Zinc oxide (ZnO) has attracted considerable attention because of its potential applications in optoelectronic devices. Many scientists have reported on the preparation of ZnO based photodetectors in metal-semiconductor-metal (MSM) structures where expensive noble metals are used as electrodes. Here, we propose the preparation of full metal-oxide photoconductors by using indium tin oxide (ITO) as the electrodes and ZnO thin films as sensing materials. ZnO thin films were prepared by employing a simple ultrasonic spray pyrolysis (USP) technique with a commercial ultrasonic nebulizer (1.7 MHz). I

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Muhammad, S., A. T. Nomaan, A. O. Olaoye, et al. "Facile low temperature processed nanostructure ZnO QD based thin films for potential perovskite solar cell: thickness dependence of crystal and electrical properties." Journal of Physics: Conference Series 2411, no. 1 (2022): 012011. http://dx.doi.org/10.1088/1742-6596/2411/1/012011.

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Abstract The precipitation-spin coating technique is employed to prepare nanostructure ZnO quantum dot (QD) films at different thicknesses. The X-ray diffraction analysis reveals the polycrystalline thin film growth along (101) plane and crystallinity improvement with thickness rise. The increase in thickness causes an increase (5.14 - 7.73 nm) and a decrease (3.39- 3.22 eV) in grain size and bandgap respectively. At optimized thickness, the ZnO QD thin film exhibits 72 % transmittance with the lowest resistivity of 16.24 x 10-2 Ωcm and highest carrier mobility of 15.38 cm2/Vs rendering it via

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Vyas, Sumit. "A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors." Johnson Matthey Technology Review 64, no. 2 (2020): 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.

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Zinc oxide has emerged as an attractive material for various applications in electronics, optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at room temperature as compared to 25 meV of gallium nitride, an III-V compound makes ZnO an efficient light emitter in the ultraviolet (UV) spectral region and hence favourable for optoelectronic applications. The high conductivity and transparency of ZnO makes it important for applications like transparent conducting oxides (TCO) and thin-film transistors (TFT). In this paper, the optoelectronic, electronic and other p

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