Relevant bibliographies by topics / ZnO Thin Film Transistor

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'ZnO Thin Film Transistor'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 September 2023

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Journal articles on the topic "ZnO Thin Film Transistor"

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Pokharel, Peshal, and Lalita Shrestha. "Fabrication of Transparent Thin Film for Application of Thin Film Transistor (TFT) and Microelectronics." Himalayan Journal of Science and Technology 6, no. 1 (2022): 22–28. http://dx.doi.org/10.3126/hijost.v6i1.50645.

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A thin-film transistor (TFT) is a special type of metal-oxide-semiconductor field-effect transistor (MOSFET) made by coating an insulating substrate with layers of an active semiconductor layer, metallic contacts, and the dielectric layer. FET transistors consist of three main components: source, gate, and drain. The main objective of the work is to fabricate the channel component by growing the ZnO nanostructure on the glass substrate using spin coating and spray pyrolysis methods. Thin films of zinc oxide (ZnO) were deposited on glass substrates by spin coating techniques from a precursor so
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Singh, Mandeep, Gerardo Palazzo, Giuseppe Romanazzi, et al. "Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer." Faraday Discuss. 174 (2014): 383–98. http://dx.doi.org/10.1039/c4fd00081a.

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Among the metal oxide semiconductors, ZnO has been widely investigated as a channel material in thin-film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution-processed techniques. Herein, we report a solution-processable ZnO-based thin-film transistor gated through a liquid electrolyte with an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate-buffered saline (PBS) are discussed in terms of the operation stability and
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Md Sin, N. D., Mohamad Hafiz Mamat, and Mohamad Rusop. "Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application." Advanced Materials Research 667 (March 2013): 511–15. http://dx.doi.org/10.4028/www.scientific.net/amr.667.511.

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The properties of nanostructured aluminum (Al) doped zinc oxide (ZnO) thin film for thin film transistors (TFT) are presented. This research has been focused on optical and structural properties of Al doped ZnO thin film. The influence of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using UV-Vis-NIR spectrophotometer for optical properties. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The absorption coefficient spectra obtained from UV-Vis-NIR sp
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S S, Omprakash, and Naveen Kumar S K. "Impact of Deposition Temperature on Amorphous Zinc Oxide Thin Film Characteristics." International Journal of Scientific & Engineering Research 12, no. 5 (2021): 806–13. http://dx.doi.org/10.14299/ijser.2021.05.04.

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In this paper, we discuss the deposition of amorphous zinc oxide (a: ZnO) thin film at two different temperatures by spray pyrolysis unit for Thin Film Transistor (TFT) application. The a: ZnO films were studied for its structural, morphology, composition, optical and electrical properties by means of XRD, SEM, EDAX, UV-Visible spectroscopy and I-V measurement system respectively. The film thickness characterized by optical Profilometer. The SEM images exhibit the variation in temperature leads to the crystallinity of the film. The XRD spectrum confirmed the films were amorphous in nature.
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Chang, Jingjing, Kok Leong Chang, Chunyan Chi, Jie Zhang, and Jishan Wu. "Water induced zinc oxide thin film formation and its transistor performance." J. Mater. Chem. C 2, no. 27 (2014): 5397–403. http://dx.doi.org/10.1039/c3tc32311k.

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Mourey, Devin A., Dalong A. Zhao, Jie Sun, and Thomas N. Jackson. "Fast PEALD ZnO Thin-Film Transistor Circuits." IEEE Transactions on Electron Devices 57, no. 2 (2010): 530–34. http://dx.doi.org/10.1109/ted.2009.2037178.

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Moon, Yeon-Keon, Dae-Yong Moon, Sang-Ho Lee, Chang-Oh Jeong, and Jong-Wan Park. "High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering." Journal of Nanoscience and Nanotechnology 8, no. 9 (2008): 4557–60. http://dx.doi.org/10.1166/jnn.2008.ic24.

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Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputter
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Kim, Junghwan, Jun Meng, Donghoon Lee, et al. "ZnO Thin-Film Transistor Grown by rf Sputtering Using Carbon Dioxide and Substrate Bias Modulation." Journal of Nanomaterials 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/709018.

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ZnO thin-film transistor (TFT) grown by rf magnetron sputtering in Ar/O2atmosphere shows inferior turn-off characteristics compared to ZnO TFT grown by other methods. We thought that reactions between Zn and O2might produce defects responsible for the poor turn-off behavior. In order to solve this problem, we studied sputtering growth in Ar/CO2atmosphere at 450°C. During sputtering growth, we modulated substrate dc bias to control ion supply to the substrate. After growth ZnO was annealed in CO2and O2gas. With these methods, our bottom-gate ZnO thin-film transistor showed 4.7 cm2/Vsec mobility
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Khafe, Adie Bin Mohd, Hiraku Watanabe, Hiroshi Yamauchi, et al. "Physical Property Evaluation of ZnO Thin Film Fabricated by Low-Temperature Process for Flexible Transparent TFT." Journal of Nanoscience and Nanotechnology 16, no. 4 (2016): 3168–75. http://dx.doi.org/10.1166/jnn.2016.12283.

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The usual silicon-based display back planes require fairly high process temperature and thus the development of a low temperature process is needed on flexible plastic substrates. A new type of flexible organic light emitting transistor (OLET) had been proposed and investigated in the previous work. By using ultraviolet/ozone (UV/O3) assisted thermal treatments on wet processed zinc oxide field effect transistor (ZnO-FET), through low-process temperature, ZnO-FETs were fabricated which succeeded to achieve target drain current value and mobility. In this study, physical property evaluation of
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Hwang, Young Hwan, Seok-Jun Seo, and Byeong-Soo Bae. "Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor." Journal of Materials Research 25, no. 4 (2010): 695–700. http://dx.doi.org/10.1557/jmr.2010.0103.

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Thin-film transistors (TFTs) with zinc oxide channel layers were fabricated through a simple and low-cost solution process. Precursor solution concentration, annealing temperature, and the process were controlled for the purpose of improving the electrical properties of ZnO TFTs and analyzed in terms of microstructural scope. The fabricated ZnO films show preferential orientation of the (002) plane, which contributes to enhanced electron conduction and a dense surface. The results show that the TFT characteristics of the film are clearly affected by the microstructure. The optimized TFT operat
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Dissertations / Theses on the topic "ZnO Thin Film Transistor"

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Jones, Timothy Russell. "Manufacturing Gallium Doped ZnO Thin Films Suitable for Use in Thin Film Transistors Using Unbalanced Magnetron Sputtering." OpenSIUC, 2013. https://opensiuc.lib.siu.edu/theses/1117.

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Gallium doped zinc oxide (GZO) thin films were deposited onto Si (100) substrates. Depositions were performed at relatively low temperatures suitable for use in manufacturing thin films on plastic substrates. Substrates were thermally oxidized, and then thin films were deposited via radio frequency (RF) unbalanced magnetron sputtering. ZnO thin films were also sputtered in order to act as a seed layer for growing nanostructures by the hydrothermal method. Sputtering parameters evaluated independently include pressure, gas composition, power, temperature and the presence of an external magnetic
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Vidor, Fábio Fedrizzi. "Study of the hysteretic behavior in ZnO nanoparticle thin-film transistors." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2012. http://hdl.handle.net/10183/71874.

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Nas últimas décadas, o interesse na eletrônica flexível tem aumentado. Sistemas que apresentam benefícios, tais como: baixo custo, melhor desempenho, transparência, confiabilidade e melhores credenciais ecológicas, estão sendo extensivamente pesquisados por vários grupos. Os transistores de filmes-finos possuem potencial para alcançarem essas características. Dispositivos baseados em óxido de zinco (ZnO) tem atraído pesquisadores devido as suas propriedades elétricas, sensoriais e ópticas. Neste trabalho, nanopartículas de ZnO foram utilizadas como semicondutor ativo e cross-linked PVP (polivi
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Vidor, Fábio Fedrizzi [Verfasser]. "ZnO thin-film transistors for cost-efficient flexible electronics / Fábio Fedrizzi Vidor." Paderborn : Universitätsbibliothek, 2017. http://d-nb.info/112762833X/34.

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Li, Yuanjie. "Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn,Mg)O by pulsed laser deposition." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013815.

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Toporkov, Mykyta. "Growth and Characterization of Wide Bandgap Quaternary BeMgZnO Thin Films and BeMgZnO/ZnO Heterostructures." VCU Scholars Compass, 2016. http://scholarscompass.vcu.edu/etd/4196.

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This thesis reports a comprehensive study of quaternary BeMgZnO alloy and BeMgZnO/ZnO heterostructures for UV-optoelectronics electronic applications. It was shown that by tuning Be and Mg contents in the heterostructures, high carrier densities of two-dimensional electron gas (2DEG) are achievable and makes its use possible for high power RF applications. Additionally, optical bandgaps as high as 5.1 eV were achieved for single crystal wurtzite material which allows the use of the alloy for solar blind optoelectronics (Eg>4.5eV) or intersubband devices. A systematic experimental and theoretic
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Thapaliya, Prem S. "Optimization of The Fabrication Condition of RF Sputtered ZnO Thin Film Transistors with High-k HfO2 Gate Dielectric." University of Toledo / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1452258637.

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Becker, Thales Exenberger. "Caracterização elétrica temporal de transistores de filmes finos de nanopartículas de óxido de zinco." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2018. http://hdl.handle.net/10183/179538.

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Neste trabalho, são discutidas as características de transistores de filmes finos (TFTs) nos quais nanopartículas de óxido de zinco (ZnO) são empregadas como material ativo na camada semicondutora. O crescimento contínuo do interesse por este componente está associado à busca pelo desenvolvimento da tecnologia de dispositivos eletrônicos flexíveis, transparentes e de baixo custo. TFTs integrados com nanopartículas de ZnO são apresentados, e uma extensa rotina de caracterização elétrica transiente é realizada para avaliar como estes dispositivos se comportam e degradam ao longo do tempo. Foram
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Elzwawi, Salim Ahmed Ali. "Cathodic Arc Zinc Oxide for Active Electronic Devices." Thesis, University of Canterbury. Electrical and Computer Engineering, 2015. http://hdl.handle.net/10092/10852.

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The filtered cathodic vacuum arc (FCVA) technique is a well established deposition method for wear resistant mechanical coatings. More recently, this method has attracted attention for growing ZnO based transparent conducting films. However, the potential of FCVA deposition to prepare ZnO layers for electronic devices is largely unexplored. This thesis addresses the use of FCVA deposition for the fabrication of active ZnO based electronic devices. The structural, electrical and optical characteristics of unintentionally doped ZnO films grown on different sapphire substrates were systematically
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Lee, Hyun Ho. "A thin film transistor driven microchannel device." Texas A&M University, 2004. http://hdl.handle.net/1969.1/1439.

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Novel electrophoresis devices for protein and DNA separation and identification have been presented and studied. The new device utilizes a contact resistance change detection method to identify protein and DNA in situ. The devices were prepared with a microelectronic micromechanical system (MEMS) fabrication method. Three model proteins and six DNA fragments were separated by polyacrylamide gel microchannel electrophoresis and surface electrophoresis. The detection of the proteins or DNA fragments was accomplished using the contact resistance increase of the detection electrode due to adsorpti
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Bu, Ian Yi-Yu. "Plasma nitrogenation for thin film transistor applications." Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.615998.

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Books on the topic "ZnO Thin Film Transistor"

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Vidor, Fábio Fedrizzi, Gilson Inácio Wirth, and Ulrich Hilleringmann. ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-72556-7.

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Symposium, on Thin Film Transistor Technologies (8th 2006 Cancun Mexico). Thin film transistor technology 8. Electrochemical Society, 2006.

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Li, Flora M., Arokia Nathan, Yiliang Wu, and Beng S. Ong. Organic Thin Film Transistor Integration. Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527634446.

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Symposium on Thin Film Transistor Technologies (4th 1998 Boston, Massachusetts). Thin film transistor technologies: Proceedings of the Fourth Symposium on Thin Film Transistor Technologies. Edited by Kuo Yue, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Electronics Division. Electrochemical Society, 1999.

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Symposium, on Thin Film Transistor Technologies (2nd 1994 Miami Beach Fla ). Proceedings of the Second Symposium on Thin Film Transistor Technologies. Electrochemical Society, 1995.

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Symposium, on Thin Film Transistor Technologies (5th 2000 Phoenix Ariz ). Thin film transistor technologies V: Proceedings of the international symposium. Electrochemical Society, 2001.

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Yue, Kuo, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Electronics Division, eds. Proceedings of the Third Symposium on Thin Film Transistor Technologies. Electrochemical Society, 1997.

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Symposium on Thin Film Transistor Technologies (1st 1992 Toronto, Ont.). Proceedings of the First Symposium on Thin Film Transistor Technologies. Electrochemical Society, 1992.

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9

Bo mo jing ti guan (TFT) zhen lie zhi zao ji shu. Fu dan da xue chu ban she, 2007.

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Hakumaku toranjisuta gijutsu no subete: Kōzō, tokusei, seizō purosesu kara jisedai TFT made = Thin film transistor. Kōgyō Chōsakai, 2007.

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Book chapters on the topic "ZnO Thin Film Transistor"

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Vidor, Fábio Fedrizzi, Gilson Inácio Wirth, and Ulrich Hilleringmann. "Zinc Oxide Transistors." In ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-72556-7_4.

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Vidor, Fábio Fedrizzi, Gilson Inácio Wirth, and Ulrich Hilleringmann. "Introduction." In ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-72556-7_1.

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Vidor, Fábio Fedrizzi, Gilson Inácio Wirth, and Ulrich Hilleringmann. "Fundamentals." In ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-72556-7_2.

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Vidor, Fábio Fedrizzi, Gilson Inácio Wirth, and Ulrich Hilleringmann. "Integration." In ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-72556-7_3.

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Vidor, Fábio Fedrizzi, Gilson Inácio Wirth, and Ulrich Hilleringmann. "Electronic Circuits." In ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-72556-7_5.

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Vidor, Fábio Fedrizzi, Gilson Inácio Wirth, and Ulrich Hilleringmann. "Improvements." In ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-72556-7_6.

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Vidor, Fábio Fedrizzi, Gilson Inácio Wirth, and Ulrich Hilleringmann. "Conclusion and Future Perspectives." In ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-72556-7_7.

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Mahaboob Jilani, S., and P. Banerji. "Effect of ZnO Loading on the Electrical Characteristics of Graphene Oxide-ZnO Based Thin Film Transistors." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_156.

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Rezk, Ayman, and Irfan Saadat. "ALD Al-doped ZnO Thin Film as Semiconductor and Piezoelectric Material: Transistors and Sensors." In The IoT Physical Layer. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-93100-5_5.

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Shimoda, Tatsuya. "Thin-Film Oxide Transistor by Liquid Process (1): FGT (Ferroelectric Gate Thin-Film Transistor)." In Nanoliquid Processes for Electronic Devices. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-2953-1_16.

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Conference papers on the topic "ZnO Thin Film Transistor"

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Sun, Jie, Devin Mourey, Dalong Zhao, et al. "Fast ZnO Thin-Film Transistor Circuits." In 2007 65th Annual Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/drc.2007.4373631.

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Zhao, Dalong A., Devin A. Mourey, and Thomas N. Jackson. "Flexible plastic substrate ZnO thin film transistor circuits." In 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354938.

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Li, Yuanyuan V., J. Israel Ramirez, Kaige G. Sun, and Thomas N. Jackson. "Low-voltage ZnO double-gate thin film transistor circuits." In 2012 70th Annual Device Research Conference (DRC). IEEE, 2012. http://dx.doi.org/10.1109/drc.2012.6256969.

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Geng, Y. F., D. D. Han, J. Cai, et al. "High performance dual-layer channel ZnO thin film transistor." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-6-9.

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Bayraktaroglu, Burhan, Kevin Leedy, and Robert Neidhard. "High Frequency ZnO Thin Film Transistors." In 2008 66th Annual Device Research Conference (DRC). IEEE, 2008. http://dx.doi.org/10.1109/drc.2008.4800819.

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Bayraktaroglu, Burhan, Kevin Leedy, and Robert Neidhard. "Nanocrystalline ZnO microwave thin film transistors." In SPIE Defense, Security, and Sensing, edited by Thomas George, M. Saif Islam, and Achyut K. Dutta. SPIE, 2010. http://dx.doi.org/10.1117/12.849666.

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Chakraborty, B., S. Chakrabarty, S. Ghosh, and C. Roy Chaudhuri. "High Performance Biosensor Based on RGO/ZnO Thin Film Transistor." In 2018 IEEE Sensors. IEEE, 2018. http://dx.doi.org/10.1109/icsens.2018.8589592.

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Iechi, Hiroyuki, Masatoshi Sakai, Masakazu Nakamura, and Kazuhiro Kudo. "VERTICAL TYPE ORGANIC LIGHT EMITTING TRANSISTOR USING THIN-FILM ZnO." In 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.a-4-3.

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Li, Haoyu U., J. Israel Ramirez, Kaige G. Sun, Yiyang Gong, Yuanyuan V. Li, and Thomas N. Jackson. "ZnO thin film transistors for more than just displays." In 2015 IEEE International Electron Devices Meeting (IEDM). IEEE, 2015. http://dx.doi.org/10.1109/iedm.2015.7409736.

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Pan, Heng, Nipun Misra, Seung H. Ko, and Costas P. Grigoropoulos. "Excimer laser annealing of ZnO nanoparticles for thin film transistor fabrication." In ICALEO® 2008: 27th International Congress on Laser Materials Processing, Laser Microprocessing and Nanomanufacturing. Laser Institute of America, 2008. http://dx.doi.org/10.2351/1.5061404.

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Reports on the topic "ZnO Thin Film Transistor"

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VanSant, Kaitlyn. Thin Film Solar Cells Using ZnO Nanowires, Organic Semiconductors and Quantum Dots. Portland State University Library, 2000. http://dx.doi.org/10.15760/etd.2692.

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Wang, Qing-Ming. Dual Mode Thin Film Bulk Acoustic Resonators (FBARs) Based on AlN, ZnO and GaN Films with Tilted c-Axis Orientation. Defense Technical Information Center, 2010. http://dx.doi.org/10.21236/ada532761.

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Olsen, L. C. Investigation of polycrystalline thin-film CuInSe{sub 2} solar cells based on ZnSe and ZnO buffer layers. Final report, February 16, 1992--November 15, 1995. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/266650.

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