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Dissertations / Theses on the topic 'ZnO Thin Film Transistor'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Jones, Timothy Russell. "Manufacturing Gallium Doped ZnO Thin Films Suitable for Use in Thin Film Transistors Using Unbalanced Magnetron Sputtering." OpenSIUC, 2013. https://opensiuc.lib.siu.edu/theses/1117.

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Gallium doped zinc oxide (GZO) thin films were deposited onto Si (100) substrates. Depositions were performed at relatively low temperatures suitable for use in manufacturing thin films on plastic substrates. Substrates were thermally oxidized, and then thin films were deposited via radio frequency (RF) unbalanced magnetron sputtering. ZnO thin films were also sputtered in order to act as a seed layer for growing nanostructures by the hydrothermal method. Sputtering parameters evaluated independently include pressure, gas composition, power, temperature and the presence of an external magnetic

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2

Vidor, Fábio Fedrizzi. "Study of the hysteretic behavior in ZnO nanoparticle thin-film transistors." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2012. http://hdl.handle.net/10183/71874.

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Nas últimas décadas, o interesse na eletrônica flexível tem aumentado. Sistemas que apresentam benefícios, tais como: baixo custo, melhor desempenho, transparência, confiabilidade e melhores credenciais ecológicas, estão sendo extensivamente pesquisados por vários grupos. Os transistores de filmes-finos possuem potencial para alcançarem essas características. Dispositivos baseados em óxido de zinco (ZnO) tem atraído pesquisadores devido as suas propriedades elétricas, sensoriais e ópticas. Neste trabalho, nanopartículas de ZnO foram utilizadas como semicondutor ativo e cross-linked PVP (polivi

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Vidor, Fábio Fedrizzi [Verfasser]. "ZnO thin-film transistors for cost-efficient flexible electronics / Fábio Fedrizzi Vidor." Paderborn : Universitätsbibliothek, 2017. http://d-nb.info/112762833X/34.

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4

Li, Yuanjie. "Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn,Mg)O by pulsed laser deposition." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013815.

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5

Toporkov, Mykyta. "Growth and Characterization of Wide Bandgap Quaternary BeMgZnO Thin Films and BeMgZnO/ZnO Heterostructures." VCU Scholars Compass, 2016. http://scholarscompass.vcu.edu/etd/4196.

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This thesis reports a comprehensive study of quaternary BeMgZnO alloy and BeMgZnO/ZnO heterostructures for UV-optoelectronics electronic applications. It was shown that by tuning Be and Mg contents in the heterostructures, high carrier densities of two-dimensional electron gas (2DEG) are achievable and makes its use possible for high power RF applications. Additionally, optical bandgaps as high as 5.1 eV were achieved for single crystal wurtzite material which allows the use of the alloy for solar blind optoelectronics (Eg>4.5eV) or intersubband devices. A systematic experimental and theoretic

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6

Thapaliya, Prem S. "Optimization of The Fabrication Condition of RF Sputtered ZnO Thin Film Transistors with High-k HfO2 Gate Dielectric." University of Toledo / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1452258637.

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7

Becker, Thales Exenberger. "Caracterização elétrica temporal de transistores de filmes finos de nanopartículas de óxido de zinco." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2018. http://hdl.handle.net/10183/179538.

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Neste trabalho, são discutidas as características de transistores de filmes finos (TFTs) nos quais nanopartículas de óxido de zinco (ZnO) são empregadas como material ativo na camada semicondutora. O crescimento contínuo do interesse por este componente está associado à busca pelo desenvolvimento da tecnologia de dispositivos eletrônicos flexíveis, transparentes e de baixo custo. TFTs integrados com nanopartículas de ZnO são apresentados, e uma extensa rotina de caracterização elétrica transiente é realizada para avaliar como estes dispositivos se comportam e degradam ao longo do tempo. Foram

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8

Elzwawi, Salim Ahmed Ali. "Cathodic Arc Zinc Oxide for Active Electronic Devices." Thesis, University of Canterbury. Electrical and Computer Engineering, 2015. http://hdl.handle.net/10092/10852.

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The filtered cathodic vacuum arc (FCVA) technique is a well established deposition method for wear resistant mechanical coatings. More recently, this method has attracted attention for growing ZnO based transparent conducting films. However, the potential of FCVA deposition to prepare ZnO layers for electronic devices is largely unexplored. This thesis addresses the use of FCVA deposition for the fabrication of active ZnO based electronic devices. The structural, electrical and optical characteristics of unintentionally doped ZnO films grown on different sapphire substrates were systematically

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9

Lee, Hyun Ho. "A thin film transistor driven microchannel device." Texas A&M University, 2004. http://hdl.handle.net/1969.1/1439.

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Novel electrophoresis devices for protein and DNA separation and identification have been presented and studied. The new device utilizes a contact resistance change detection method to identify protein and DNA in situ. The devices were prepared with a microelectronic micromechanical system (MEMS) fabrication method. Three model proteins and six DNA fragments were separated by polyacrylamide gel microchannel electrophoresis and surface electrophoresis. The detection of the proteins or DNA fragments was accomplished using the contact resistance increase of the detection electrode due to adsorpti

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10

Bu, Ian Yi-Yu. "Plasma nitrogenation for thin film transistor applications." Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.615998.

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11

Aschenbeck, Jens. "Novel amorphous silicon thin film transistor structures." Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.620172.

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12

Islam, Mujahid-ul. "Polysilicon thin film transistor systems and circuits." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613019.

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13

Kuo, Dong-Lin, and 郭東霖. "Studies of ZnO-Based Transparent Thin-Film Transistor." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/42233240051946527537.

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碩士<br>國立成功大學<br>電機工程學系碩博士班<br>97<br>Abstract In this thesis, we demonstrate an all sputtering, all lithography technology process to fabricate low voltage operational, enhancement mode N-Type ZnO-TFT by using high-k material (Y2O3) as the gate oxide. The effects of different processing parameters of ZnO layer and device geometric structures to the electrical performance of device will be discussed in Chapter 4. We also did some applications of saving device area、driving OLED and fabricating TTFT array on glass substrate. Finally by improve the series resistance of TFT device, we fabricated dev

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14

Hung, Shu-kai, and 洪書凱. "The Influence of Nitrogen Content on ZnO Thin Film Transistor." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/67ts2t.

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碩士<br>大同大學<br>光電工程研究所<br>102<br>Our group had developed a Zinc Oxide thin-film transistor with zinc oxide thin film transistors with poor electrical characteristics, transistor threshold voltage-13.65V and subthreshold swing of 2.8V/decade, which was not appropriate for low power consumption condition. Therefore, we introduce the zinc oxide with doping to improve its poor electrical characteristics. We proposed zinc nitride as precursor, deposited by DC magnetron sputtering system, formed zinc oxide doped nitrogen as TFT active layer by furnace annealing. One of the annealing condition shows t

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15

黃千睿. "Study of SolGel ZnO thin film transistor with oxidation treatment." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/18070682640020760932.

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16

Lai, Yi-Ming, and 賴奕名. "Study of Stacking ZnO Active Layer of Thin Film Transistor." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/27698785732609826334.

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17

Alshammari, Fwzah. "Multilayer Dielectrics and Semiconductor Channels for Thin Film Transistor Applications." Diss., 2018. http://hdl.handle.net/10754/630149.

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Emerging transparent conducting and semiconducting oxide (TCO) and (TSO) materials have achieved success in display markets. Due to their excellent electrical performance, TSOs have been chosen to enhance the performance of traditional displays and to evaluate their application in future transparent and flexible displays. This dissertation is devoted to the study ZnO-based thin film transistors (TFTs) using multilayer dielectrics and channel layers. Using multilayers to engineer transistor parameters is a new approach. By changing the thickness, composition, and sequence of the layers, transis

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18

Yang, Li-Hong, and 楊立宏. "Transparent ZnO nanorods thin film transistors." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/992a34.

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碩士<br>中原大學<br>電子工程研究所<br>107<br>Zinc oxide (ZnO) is a very important material for transparent thin film transistors. It has high energy gap, high mechanical properties, and thermal stability. It can also be prepared in many ways, such as chemical vapor deposition, sol-gel method, and hydrothermal method. Well-aligned vertically oriented zinc oxide (ZnO) nanorod arrays on polymethylmethacrylate (PMMA) thin film were fabricated by sol-gel and hydrothermal method. Solution-processed ZnO thin films not only possess low resistivity but also high transmission. Following, transparent thin film transi

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19

Chiu-JungChiu and 邱久容. "Application of Amorphous ZnO-Based Thin Film Transistor and UV Phototransistors." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/03865222149228585206.

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博士<br>國立成功大學<br>微電子工程研究所碩博士班<br>100<br>In this dissertation, amorphous oxide semiconductor ZnO-based thin film transistors (TFTs) with high k Ta2O5 gate dielectric were fabricated and analysis of deep UV phototransistor investigated. First, we apply a-IGZO thin film as channel layer to the fabrication of TFT with Ta2O5 gate dielectric. At 2 V operation voltage, it was found that the field-effect mobility (μFE) were 55.3 cm2/Vs, threshold voltage (VT)of 0.38 V, subthreshold swing (S.S) of 0.2 V/decade and Ion/Ioff of 3.6×105 for a-IGZO TFT with Ta2O5 gate dielectric. These results could be cont

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20

SHAO, ZHEN-FENG, and 邵振峰. "Investigation of MgZnO/ZnO Metal-Oxide-Semiconductor Heterojunction Thin-Film Transistor." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/ve7q5c.

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碩士<br>逢甲大學<br>電子工程學系<br>107<br>This study is mainly to deposit the metal-oxide-semiconductor heterojunction thin film transistor with oxide layer of alumina on the bottom-gate fluorine-doped tin oxide glass substrate. And deposit the barrier layer magnesium zinc oxide and active layer zinc oxide on the oxide layer. The oxide layer, the energy barrier layer and the active layer are produced by a ultrasonic spray pyrolysis deposition method in a non-vacuum environment, and the source/drain electrode are deposited by photolithography to form pattern then using aluminum metal in a thermal evaporat

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21

Wei-YuChen and 陳威宇. "Transistor characteristics and electrical stability of ZnO thin film transistors with MgO and HfOx dielectrics." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/38658025480788620610.

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博士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>101<br>Thin film transistor-liquid crystal displays are already largely applied in our life. As the display is developed to the large size, transistor with high carrier mobility is required. At the same time, to achieve low power consumption, reduce the operation voltage is an important issue. In this study, MgO and HfOx with high dielectric constant were used as dielectric layer in ZnO-based thin film transistors. The transistor characteristic improvement including carrier mobility and threshold voltage is investigated. The electrical stability against gate bi

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22

Chen, Yu-Chun, and 陳禹鈞. "Physical Mechanisms and device new application of ZnO-based Thin Film Transistor." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/01019388873502340848.

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博士<br>國立中山大學<br>物理學系研究所<br>101<br>Due to the progress of digitized information, a number of studies have demonstrated the application of active-matrix flat panel display, such as ultra-large diaply (60 up inches), high resolution potable electronic device and non-glass 3-D display. These new applications bring a great challenge to the present device fabrication technology and conventional amorphous hydrogenated silicon (a-Si) TFT. For a switching TFT or driving TFT in next generation display, the electrical performance and reliability requirement of TFT is also increased. ZnO-based amorphous o

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23

Yeh, Barry B. L., and 葉柏良. "Studies of ZnO Transparent Thin Film Transistors." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/49118233620143268790.

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碩士<br>國立暨南國際大學<br>電機工程學系<br>95<br>In this thesis, the transparent thin-film-transistor with ZnO thin films was fabricated. To deposit ZnO film, RF-magnetron sputtering was used with the different Ar:O2 gas flow, power, and working pressure. Then, the sample was annealing with different temperature. The material and electrical characterizations were performed by four-point-probe measurement, Hall-effect measurement, XRD analysis, spectrophotometer, and HP4156 semiconductor parameter analysis. The ZnO thin film depositied with the O2(0.5%) flow ratio exhibits the optimum (0002) orientation. The

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24

Lin, Yung-Hao, and 林詠濠. "ZnO-based Transparent Thin-film Transistors with ZnO Buffer Layer." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/90245426621793322977.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>97<br>Al-doped ZnO (ZnO:Al) transparent thin-film transistors (TTFTs) with and without ZnO buffer layer were fabricated by a magnetron RF co-sputtering system. The deposited ZnO buffer layer/ZnO:Al channel layer exhibited single-phase hexagonal wurtzite structure measured by X-ray diffraction. The grain size of ZnO:Al channel layer with and without ZnO buffer layer are 21.7 nm and 19.4 nm, respectively. It indicated that the ZnO buffer layer caused a better crystalline structure of the ZnO:Al channel layer. The electric properties, such as the field-effect carrier

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25

Lo, Zih-Han, and 羅子涵. "Fabrication of ZnO Thin Film Transistor with High-k Organic-Inorganic Composite Dielectric." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/03151300999745792440.

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碩士<br>國立成功大學<br>電機工程學系碩博士班<br>95<br>This study implemented using the method of the dispersing agent with Poly(4-vinylphenol) to generate organic-inorganic thin film insulator layer. Through the adding TiO2 into organic-inorganic thin film insulator layer, the k value increased from 3.5 to 3.9. Furthermore, this insulator layer hold the current density of 10-9 with the extremely characteristic of isolation such as shockproof, and bears pulls and the characteristic of organic along with plastic, transparent and flexible. Applies the zinc oxide thin film in the thin film transistor channel laye

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Kuo, Po-Hung, and 郭柏宏. "ZnO-Based Thin Film Transistors and their Applications." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/94559361177676421822.

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碩士<br>國立成功大學<br>電機工程學系碩博士班<br>96<br>In this paper,we demonstrate an Enhancement Mode N-Type ZnO-TFT by changing the Process Parameter and Device Geometric Structure.The maximum Field Effect Mobility(μFE) is 4.2 (cm2/V.s) and the ION/OFF~104~107,the optimized Subthreshold Swing (S.S) is 0.83(V/Decade).We also did some applications of saving device area、driving OLED and integrating to Logic Inverter by ZnO-TFT devices. There are two parts of this paper,In the first part,we discuss different Sputtering Parameters and Post-Treatment for ZnO-TFT analysing by XRD、AFM、SEM and I-V Measurement.In the

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Hsiao, Li-Han, and 蕭力函. "Characterization of Annealed ZnO Films and Fabrication on Thin-Film Transistors." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/18981673380828955686.

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碩士<br>國立中央大學<br>電機工程學系<br>101<br>In the future, when the size and resolution of displays continuously increase, ZnO-based thin film transistor (TFT) is one of the potential replacement for amorphous-Si and low temperature poly-Si TFTs based on its higher mobility (>10 cm2/ V∙s), less light sensitive and compatible fabrication process. To achieve a high mobility ZnO film, the properties of annealed ZnO and Ga-doped ZnO in oxygen or nitrogen ambient were investigated. Structural, electrical and optical properties were summarized to explain the generation-annihilation of defects. In the end,

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28

Chen, Pin-Tseng, and 陳品岑. "Fabrication and Characterization of Film-Profile-Engineered ZnO Thin-Film Transistors." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/f9bt83.

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碩士<br>國立交通大學<br>電子工程學系電子研究所<br>102<br>In this thesis, we have successfully realized a new structure of ZnO TFTs fabricated using a novel film-profile engineering (FPE) concept, which has the merit of employing only one mask. In order to better understand about the new structure, we study the effects of different structural parameters such as channel length and types of fan-out layout of the devices. Effects of deposition pressure also have been studied. For the purpose of reducing parasitic source/drain (S/D) resistance to improve the electrical performance, we also study the impacts of the A

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29

Tsai, Shang Yu, and 蔡尚育. "Fabrication ZnO transparent thin film transistor using high dielectric constant Gd2O3 as gate insulator." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/16333640452274744504.

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碩士<br>長庚大學<br>光電工程研究所<br>97<br>Abstract Developments of the transparent electronic circuits have been interested in most of researches to create new optoelectronic devices and applications. Among them the transparent field-effect transistor (FET) is a key device for realizing transparent circuits. Recently, transparent oxide semiconductors have emerged as promising materials for next generation thin film transistors (TFTs). ZnO, especially, has attracted much more attention with its advantages than other semiconductor materials because of its wide direct band gap of 3.4 eV, high transparency i

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Luo, Yi Cheng, and 羅伊呈. "The Investigation of Zr doped ZnO Thin Film Transistor by RF co-sputtering technology." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/81856641006860269404.

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碩士<br>長庚大學<br>電子工程學系<br>101<br>This work elucidates the properties of ZrZnO and ZnO TFTs devices using reactively evaporated Gd2O3 as a gate dielectric. Effects of zirconium (Zr) doping on the performance of resolve processed zinc oxide (ZnO) thin-film transistors (TFTs) grown using the RF cosputtering method are investigated. We measured the energy discontinuity in the band offsets (ΔEc and ΔEv) of Gd2O3/ZrZnO and Gd2O3/ZnO heterostructures using x-ray photoelectron spectroscopy (XPS). The Gd2O3/ZrZnO TFTs showed the better conduction band (ΔEc = 3.98) and electrical stability performances

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31

Beaumont, Ana Cecilia Marques de. "ZTO Thin film transistor parameter extraction and modeling." Master's thesis, 2017. http://hdl.handle.net/10362/31875.

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Transistor models are of utmost importance for device behaviour prediction and circuit design. Physical modelling has the advantage of the parameters being correlated based on device physics. This allows to gain insight on the device during the analysis and extraction of parameters phase. However, the extraction methods may not consider possible non-idealities of the device, which can cause modelling issues when working with novel thin film transistors (TFTs). A simple physical DC and AC model was applied to a novel zinc tin oxide TFT annealed at low temperatures (200 ºC). The characteristic

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Shin, Cing-Yun, and 施清雲. "Development of wideband ZnO-based transparent thin-film transistors." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/73444355011020606579.

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碩士<br>國立清華大學<br>電子工程研究所<br>93<br>Abstract The technological advancement of liquid crystal displays (LCDs) is changing with time everyday. Recently, it has started to dominate the display devices in a large scale and this has urged for more technological improvement. One challenging area for the electronics industry is the development of fully transparent optoelectronics devices. Substituting thin film transistors (TFTs) made of amorphous Si (a-Si) or polycrystalline Si (poly-Si) that are currently used in active-matrix liquid crystal displays (AMLCDs) with transparent ZnO-TFTs would enable i

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Wu, Meng-Lun, and 吳孟倫. "High Performance and High Stability ZnO Thin Film Transistors." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/49694776081582444575.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>96<br>This thesis focuses on two aspects of ZnO thin film transistors, the post oxygen passivation on ZnO thin film and a delta structure of ZnO TFTs. The first part demonstrates a high-performance enhancement-mode ZnO TFT on a glass substrate. A post deposition oxygen passivation technique is proposed with the purpose to fill up oxygen vacancies in the upper part of the ZnO channel layer. Before realizing the TFT device, the characteristics of ZnO thin film are examined to find out the optimal deposition conditions. The ZnO thin film is deposited by RF magnetron sp

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Wu, Meng-Lun. "High Performance and High Stability ZnO Thin Film Transistors." 2008. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2507200810423900.

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Lee, Hai-Lin, and 李海粼. "Study on the fabrication of ZnO thin film transistors." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/84657829466459368672.

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碩士<br>國立臺灣大學<br>應用力學研究所<br>100<br>The effect of ZnO thin film transistors annealed in different ambiences is presented. In this research, solution-process ZnO thin film transistor has been demonstrated. Zinc oxide is an inorganic material. Therefore, the thin film transistor fabricated by ZnO can obtain higher mobility than that fabricated by organic material. There are many methods which can deposit ZnO thin film. Generally speaking, ZnO thin film deposited by RF sputtering can get higher quality, yet the flaws of sputtering are high cost and difficult to implement large area coating, so solu

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Li, Shin-Hung, and 李信宏. "Fabrication and Characterization of Undoped-ZnO Thin Film Transistors." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/33209742529390969126.

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碩士<br>國立交通大學<br>電子工程學系電子研究所<br>101<br>In this thesis, we have successfully fabricated ZnO TFTs with the inverted-staggered structure. RF sputter method, which has merits of low manufacture temperature and good uniformity on a large scale, was employed to deposit the ZnO films,. Because of the simple fabrication processes on inverted-staggered structure, we can investigate the impacts of various deposition conditions on the ZnO films, such as the oxygen flow rate, substrate temperature, and ZnO thickness. Finally, the ZnO TFTs fabricated with suitable manufacture parameters were investigated f

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Chia-ChiChen and 陳佳琪. "Investigation of Three-Dimensionally Stacked Complementary Thin-Film Transistors Using ZnO and NiO Thin Film." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/sp74b9.

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Wu, Pei-Wen, and 吳佩紋. "Low-temperature solution processed ZnO semiconductor thin films and its application in thin film transistors." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/67159805621835338672.

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碩士<br>逢甲大學<br>材料科學所<br>100<br>In this study, the author fabricated the bottom-gate thin film transistors ( TFTs ) with zinc oxide ( ZnO ) transparent semiconductor thin film as the active channel layer via a low-temperature solution process. The coating solution was synthesized by the following procedures. First the crystalline ZnO nanoparticles were manufactured by the hydrothermal method, and then ZnO nanoparticles, DI water, and dispersant Polyvinylpyrrolidone ( PVP ) were mixed for preparing the ZnO nanoparticles solution. The ZnO semiconductor thin films were formed by spin-coating and lo

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Lung, Huan-Chi, and 龍煥其. "Fabrication and Characterization of ZnO Bottom-Gate Thin Film Transistor on Glass Substrate by Sputtering." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/h4h96v.

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碩士<br>中原大學<br>電子工程研究所<br>106<br>Transparent and high electron mobility thin film transistor (TFT) is the key technology for modern displays. The transparency can enhance the brightness of display at lower operated power. The high electron mobility can enhance the switching speed and resolution. Metal oxides, for example zinc oxide (ZnO) can meet those requirements. In our study, the ZnO thin film is deposited by sputtering. The ALD-Al2O3 as gate dielectric is deposited on ITO/glass substrate by atomic layer deposition (ALD). Moreover, annealing of ZnO thin film in air shows the greater carrier

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Bo-YuanSu and 蘇泊沅. "Investigation of the optical and electrical properties of ZnO-based thin films grown via sol-gel method for thin-film transistor application." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/03286700121608981053.

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博士<br>國立成功大學<br>電機工程學系碩博士班<br>101<br>Zinc oxide (ZnO) thin films with n-type conductivity and high transparency have been applied in devices such as transparent electrodes, photovoltaic cells, and thin-film transistors (TFTs). In this work, ZnO-based films were deposited by the sol-gel method and utilized as an anti-reflective coating (ARC) to enhance the light gathering capability and short-circuit current density (Jsc) of GaAs solar cells. The ARC significantly enhanced the conversion efficiency of cells from 8.2% to 13.86%. The results indicate that chemically deposited ZnO films are effect

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Shien, Wen-Ming, and 謝文明. "The properties research of ZnO based Transparent Thin-Film Transistors." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/10773186738182712415.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>96<br>The purpose of this research is to investigate the Bottom-gate-type and enhancement-mode thin film transistors with the Al slightly doped ZnO films as the active channel layers. This research changed the different amount of Al slightly doped ZnO films and the thickness of the Al slightly doped ZnO films and investigated electrical characteristics of the device including IDS-VDS and IDS-VGS, the thermal stability and the optical stability. The carries passed through the channel layer which were low electric conductivity. Because carries were induced at bottom

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Chen, Yu-Sheng, and 陳育昇. "High-Performance ZnO Thin Film Transistors with Optimized Oxygen Passivation." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/60754199065147979830.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>95<br>We demonstrate a high-performance enhancement-mode ZnO TFT on a glass substrate. The ZnO thin film is deposited by RF magnetron sputtering with the presence of O2 at low temperature and optimized oxygen passivation conditions on the ZnO surface. When biased at the saturation region VDS = 10~20V and VGS = 5V, the IDS is as high as 0.85mA. The Ion/Ioff ratio is 1.47×106 and field effect mobility as high as 391.6 cm2/Vs. We believe the results are among the best ZnO TFTs ever obtained.

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Ho, Po-Chi, and 何柏錡. "The Influence of Oxygen Content on ZnO Thin Film Transistors." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/05010280257894308377.

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"Study of ferromagnetic and field effect properties of ZnO thin films." Thesis, 2011. http://library.cuhk.edu.hk/record=b6075123.

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Xia, Daxue.<br>Thesis (Ph.D.)--Chinese University of Hong Kong, 2011.<br>Includes bibliographical references.<br>Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web.<br>Abstract also in Chinese.

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FeriAdriyanto and 飛瑞. "Solution-Processed ZnO Nanorods, Barium Zirconate Titanate and Poly(4-vinylphenol) for Thin Film Transistor Applications." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/67545193670035711162.

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博士<br>國立成功大學<br>電機工程學系<br>102<br>The control dimension and morphology in Zinc Oxide (ZnO) nanorods are critical issues in the fabrication of electronic nanodevice. This study discusses ZnO nanorods on plastic substrate for Thin Film Transistor (TFTs) applications. The substrate was immersed in a zinc nitrate hexahydrate Zn(NO3)26H2O and hexamethylenetetramine C12H6N4 solution under various deposition conditions. The X-ray diffraction (XRD) pattern showed that the films were composed of ZnO and Zn(OH)2, and that the ZnO crystal had strong x-ray reflection peaks (110) and (002), in which the c-

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Chen, Yao-Ching, and 陳堯景. "Fabrication and Characterization of doped Ga2O3 and ZnO Thin-Film Transistors." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/48551862117175137600.

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碩士<br>國立中興大學<br>材料科學與工程學系所<br>105<br>In this research, the β-Ga2O3 films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition and applied for the fabrication of thin-film transistors (TFTs). Through the Si-ion implantation and thermal annealing treatment, the film properties and corresponding TFT characteristics of β-Ga2O3 were described. In addition, the cobalt-doped ZnO (CZO) films were prepared by pulsed laser deposition and attempted for the TFT fabrication. The influences of film thickness and gas atmosphere for CZO growth on the characteristics of TFTs we

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Nan, Chunyan. "Numerical Modeling of Flexible ZnO Thin-Film Transistors Using COMSOL Multiphysics." Thesis, 2013. http://hdl.handle.net/10012/7660.

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Increasing attention has been directed towards the development of optically transparent and mechanically flexible thin film transistors (TFTs) and associated circuits based on the transition metal oxides. These flexible see-through structures offer reduced weight, potential low-cost fabrication, and high performance compared to commonly used hydrogenated amorphous silicon (a-Si:H) in applications for large-area electronics and displays. As these emerging technologies evolve towards commercialization, a thorough investigation of the impacts of the thermo-mechanical stress and strain and their e

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Liu, Mei-Chen, and 柳美禎. "Fabrication and Electrical Characterization of In2O3:ZnO (IZO) Thin-Film Transistors." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/f48s9w.

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碩士<br>明志科技大學<br>材料工程系碩士班<br>103<br>The IZO films are processed at different annealing temperatures (350°C, 400°C, 500°C, and 600°C) under different argon gas flow (50, 100, 150, 200 SCCM).The physical characteristics of IZO films including crystal structures, photoelectric properties and morphology were obtained by using X-Ray diffraction (XRD), uv-visible spectroscopy, Hall effect measurement and atomic force microscopy (AFM).The XRD shows that the amorphous phase, the transmittance higher than 80 % and the surface roughness about 1~2 nm (Rms) are abtained. The best resistivity (annealed at 3

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CHUN-WEI-SHIH and 施鈞維. "The Study on ZnO and IGZO Double Layer Thin Film Transistors." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/78509074584893755068.

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碩士<br>國立暨南國際大學<br>電機工程學系<br>104<br>This thesis has two parts. First, the IGZO TFTs were fabricated by Pulsed-DC sputter deposition with different gas flow rate, oxygen ratio, and RF-power. Second, the double-layer TFTs were fabricated with IGZO and ZnO thin films. As results, for IGZO TFTs, the devices fabricated with oxygen ratio of 4-6%, total flow of 125 sccm, and RF-power of 125 W showed the lower threshold-voltage, higher mobility, higher On/Off current ratio, and lower sub-threshold swing than that of other samples. For IGZO/ZnO double-layer TFTs, the devices fabricated at RF-power of 12

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Chiang, Yu-Hsin, and 蔣育欣. "ZnO nanorods thin film transistors by the low-temperature solution method." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/30524680601974200737.

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碩士<br>國立中正大學<br>光機電整合工程所<br>98<br>In this thesis, ZnO nanorods were fabricated by two-step process. In the first instance, the substrate was pre-coated seed layer by sol-gel spin-coating method before growing nanorods . Secondly, ZnO nanorods thin film were synthesized by Chemical bath deposition (CBD). ZnO nanorods thin films were measured by SEM, XRD and photo- luminescence spectra to get there physical characteristic. We fabricated the field effective transistor by using these ZnO nanorods thin films and measured I-V curve of these transistors. We obtained the ZnO nanorods thin film with fi

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