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Journal articles on the topic 'ZnO Thin Film Transistor'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Pokharel, Peshal, and Lalita Shrestha. "Fabrication of Transparent Thin Film for Application of Thin Film Transistor (TFT) and Microelectronics." Himalayan Journal of Science and Technology 6, no. 1 (2022): 22–28. http://dx.doi.org/10.3126/hijost.v6i1.50645.

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A thin-film transistor (TFT) is a special type of metal-oxide-semiconductor field-effect transistor (MOSFET) made by coating an insulating substrate with layers of an active semiconductor layer, metallic contacts, and the dielectric layer. FET transistors consist of three main components: source, gate, and drain. The main objective of the work is to fabricate the channel component by growing the ZnO nanostructure on the glass substrate using spin coating and spray pyrolysis methods. Thin films of zinc oxide (ZnO) were deposited on glass substrates by spin coating techniques from a precursor so

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2

Singh, Mandeep, Gerardo Palazzo, Giuseppe Romanazzi, et al. "Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer." Faraday Discuss. 174 (2014): 383–98. http://dx.doi.org/10.1039/c4fd00081a.

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Among the metal oxide semiconductors, ZnO has been widely investigated as a channel material in thin-film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution-processed techniques. Herein, we report a solution-processable ZnO-based thin-film transistor gated through a liquid electrolyte with an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate-buffered saline (PBS) are discussed in terms of the operation stability and

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3

Md Sin, N. D., Mohamad Hafiz Mamat, and Mohamad Rusop. "Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application." Advanced Materials Research 667 (March 2013): 511–15. http://dx.doi.org/10.4028/www.scientific.net/amr.667.511.

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The properties of nanostructured aluminum (Al) doped zinc oxide (ZnO) thin film for thin film transistors (TFT) are presented. This research has been focused on optical and structural properties of Al doped ZnO thin film. The influence of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using UV-Vis-NIR spectrophotometer for optical properties. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The absorption coefficient spectra obtained from UV-Vis-NIR sp

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4

S S, Omprakash, and Naveen Kumar S K. "Impact of Deposition Temperature on Amorphous Zinc Oxide Thin Film Characteristics." International Journal of Scientific & Engineering Research 12, no. 5 (2021): 806–13. http://dx.doi.org/10.14299/ijser.2021.05.04.

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In this paper, we discuss the deposition of amorphous zinc oxide (a: ZnO) thin film at two different temperatures by spray pyrolysis unit for Thin Film Transistor (TFT) application. The a: ZnO films were studied for its structural, morphology, composition, optical and electrical properties by means of XRD, SEM, EDAX, UV-Visible spectroscopy and I-V measurement system respectively. The film thickness characterized by optical Profilometer. The SEM images exhibit the variation in temperature leads to the crystallinity of the film. The XRD spectrum confirmed the films were amorphous in nature.

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5

Chang, Jingjing, Kok Leong Chang, Chunyan Chi, Jie Zhang, and Jishan Wu. "Water induced zinc oxide thin film formation and its transistor performance." J. Mater. Chem. C 2, no. 27 (2014): 5397–403. http://dx.doi.org/10.1039/c3tc32311k.

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6

Mourey, Devin A., Dalong A. Zhao, Jie Sun, and Thomas N. Jackson. "Fast PEALD ZnO Thin-Film Transistor Circuits." IEEE Transactions on Electron Devices 57, no. 2 (2010): 530–34. http://dx.doi.org/10.1109/ted.2009.2037178.

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7

Moon, Yeon-Keon, Dae-Yong Moon, Sang-Ho Lee, Chang-Oh Jeong, and Jong-Wan Park. "High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering." Journal of Nanoscience and Nanotechnology 8, no. 9 (2008): 4557–60. http://dx.doi.org/10.1166/jnn.2008.ic24.

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Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputter

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8

Kim, Junghwan, Jun Meng, Donghoon Lee, et al. "ZnO Thin-Film Transistor Grown by rf Sputtering Using Carbon Dioxide and Substrate Bias Modulation." Journal of Nanomaterials 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/709018.

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ZnO thin-film transistor (TFT) grown by rf magnetron sputtering in Ar/O2atmosphere shows inferior turn-off characteristics compared to ZnO TFT grown by other methods. We thought that reactions between Zn and O2might produce defects responsible for the poor turn-off behavior. In order to solve this problem, we studied sputtering growth in Ar/CO2atmosphere at 450°C. During sputtering growth, we modulated substrate dc bias to control ion supply to the substrate. After growth ZnO was annealed in CO2and O2gas. With these methods, our bottom-gate ZnO thin-film transistor showed 4.7 cm2/Vsec mobility

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9

Khafe, Adie Bin Mohd, Hiraku Watanabe, Hiroshi Yamauchi, et al. "Physical Property Evaluation of ZnO Thin Film Fabricated by Low-Temperature Process for Flexible Transparent TFT." Journal of Nanoscience and Nanotechnology 16, no. 4 (2016): 3168–75. http://dx.doi.org/10.1166/jnn.2016.12283.

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The usual silicon-based display back planes require fairly high process temperature and thus the development of a low temperature process is needed on flexible plastic substrates. A new type of flexible organic light emitting transistor (OLET) had been proposed and investigated in the previous work. By using ultraviolet/ozone (UV/O3) assisted thermal treatments on wet processed zinc oxide field effect transistor (ZnO-FET), through low-process temperature, ZnO-FETs were fabricated which succeeded to achieve target drain current value and mobility. In this study, physical property evaluation of

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10

Hwang, Young Hwan, Seok-Jun Seo, and Byeong-Soo Bae. "Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor." Journal of Materials Research 25, no. 4 (2010): 695–700. http://dx.doi.org/10.1557/jmr.2010.0103.

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Thin-film transistors (TFTs) with zinc oxide channel layers were fabricated through a simple and low-cost solution process. Precursor solution concentration, annealing temperature, and the process were controlled for the purpose of improving the electrical properties of ZnO TFTs and analyzed in terms of microstructural scope. The fabricated ZnO films show preferential orientation of the (002) plane, which contributes to enhanced electron conduction and a dense surface. The results show that the TFT characteristics of the film are clearly affected by the microstructure. The optimized TFT operat

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11

Tiwari, Nidhi, Ram Narayan Chauhan, Po-Tsun Liu, and Han-Ping D. Shieh. "Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets." RSC Advances 5, no. 64 (2015): 51983–89. http://dx.doi.org/10.1039/c5ra08793g.

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12

Ma, Hong Yu, En Jie Ding, and Zeng Liang Shi. "ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes." Key Engineering Materials 480-481 (June 2011): 605–8. http://dx.doi.org/10.4028/www.scientific.net/kem.480-481.605.

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The fabrication of zinc oxide （ZnO）based thin-film field-effect transistors (TFTs) on p-Si substrates by rf magnetron sputtering, photolithography and wet etching processes was presented. Bottom-gate-type thin film transistors using ZnO as an active channel layer were constructed, and their properties were characterized by atomic force microscope, X-ray diffraction and I-V measurements. The fabricated ZnO transistors exhibited enhancement mode characteristics with the on-to-off current ratio of ∼105 and the threshold voltage of 10V. It is believed that the ZnO TFTs fabricatd by the simple and

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13

Razak, A. A., W. H. Khoo, and Suhana Mohamed Sultan. "ZnO Thin Film Transistor: Effect of Traps and Grain Boundaries." ELEKTRIKA- Journal of Electrical Engineering 17, no. 1 (2018): 41–43. http://dx.doi.org/10.11113/elektrika.v17n1.9.

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Recently ZnO has drawn a lot of attention in semiconductor industry due to its interesting features. High exciton binding energy, high resistivity against radiation, high breakdown voltage, low temperature deposition are some of the interesting features of this material. Zinc oxide TFT device gains an increasing interest for its potential in sensing applications due to its biocompability, chemical stability and simple fabrication process with various methods and high surface-to-volume ratio. However, ZnO TFT devices from previous work exhibited poor ION and field effect mobility. This work inv

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14

Li, Yuanyuan V., Jose Israel Ramirez, Kaige G. Sun, and Thomas N. Jackson. "Low-Voltage Double-Gate ZnO Thin-Film Transistor Circuits." IEEE Electron Device Letters 34, no. 7 (2013): 891–93. http://dx.doi.org/10.1109/led.2013.2263193.

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15

Bayraktaroglu, Burhan, and Kevin Leedy. "Pulsed Laser Deposited ZnO for Thin Film Transistor Applications." ECS Transactions 16, no. 12 (2019): 61–73. http://dx.doi.org/10.1149/1.2985844.

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16

Shan, Yue, Yan Hong Wu, Dong Xing Wang, et al. "The Preparation and Characteristics Analysis of ZnO/Ni/ZnO Schottky Junction TFTs." Advanced Materials Research 981 (July 2014): 834–37. http://dx.doi.org/10.4028/www.scientific.net/amr.981.834.

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Using radio frequency magnetron sputtering deposition deposit ZnO films on SiO2glass, and prepare vertical structure ZnO-based thin film transistor. By means of measurement, obtain the static output characteristics, the output current can achieve the order of milliampere, get the transfer characteristics of ZnO TFTs; transconductance which get the largest value gm=0.0061S when source-drain voltage VDS=3V, source-gate VGS=0.4V; output resistance and voltage amplification coefficient, the smallest voltage amplification factor is μ=1.16056,still have voltage amplification effect.

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17

Yuliarto, Brian, Mardiana Silvia, Muhammad Iqbal, and Nugraha. "Fabrication of LP Gas Leakage Detector Systems Based on Modified Nanostructured ZnO Thin Film." Advanced Materials Research 364 (October 2011): 206–10. http://dx.doi.org/10.4028/www.scientific.net/amr.364.206.

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The liquid petroleum (LP) gas leakage detector was successfully fabricated using modified nanostructured ZnO thin film as the sensitive layer. The detector consists of ZnO sensitive layer, a heater, a comparator, a transistor, an LED and a buzzer. The detector has the switch system where the comparator can change the current through the LED and buzzers when the LP gas is detected. The ZnO thin films were fabricated by sol gel method using chemical bath deposition technique at moderate temperature on an alumina substrate with electrode contacts. This sensors system allows us to produce LP gas s

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18

Lee, Jong Hoon, Hong Seung Kim, Nak Won Jang, and Young Yun. "A Study of Thin-Film Transistor with Mg0.1Zn0.9O/ZnO Active Structure." Journal of the Korean Institute of Electrical and Electronic Material Engineers 27, no. 7 (2014): 472–76. http://dx.doi.org/10.4313/jkem.2014.27.7.472.

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19

Bayraktaroglu, Burhan, Kevin Leedy, and Robert Neidhard. "Microwave ZnO Thin-Film Transistors." IEEE Electron Device Letters 29, no. 9 (2008): 1024–26. http://dx.doi.org/10.1109/led.2008.2001635.

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20

BAYRAKTAROGLU, BURHAN, KEVIN LEEDY, and ROBERT NEIDHARD. "ZnO NANOCRYSTALLINE HIGH PERFORMANCE THIN FILM TRANSISTORS." International Journal of High Speed Electronics and Systems 20, no. 01 (2011): 171–82. http://dx.doi.org/10.1142/s0129156411006507.

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In this study, nc - ZnO films deposited in a Pulsed Laser Deposition (PLD) system at various temperatures were used to fabricate high performance transistors. As determined by Transmission Electron Microscope (TEM) images, nc - ZnO films deposited at a temperature range of 25°C to 400°C were made of closely packed nanocolums showing strong orientation. The influences of film growth temperature and post growth annealing on device performance were investigated. Various gate dielectric materials, including SiO 2, Al 2 O 3, and HfO 2 were shown to be suitable for high performance device applicatio

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21

Tiwari, Nidhi, Ram Narayan Chauhan, Po-Tsun Liu, and Han-Ping D. Shieh. "Modification of intrinsic defects in IZO/IGZO thin films for reliable bilayer thin film transistors." RSC Advances 6, no. 79 (2016): 75693–98. http://dx.doi.org/10.1039/c6ra13208a.

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Dual active channel IZO/IGZO thin film transistors as such and with ZnO interlayer are fabricated and characterized to investigate the impact of ultra-thin ZnO insertion on their performance and bias stability.

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22

Kuk, Seoung Woo, Seok Hwan Bang, In Hoe Kim, et al. "Chemical and Electrical Properties of ZnS Deposited with DEZ and H₂S by Atomic Layer Deposition Method." Materials Science Forum 544-545 (May 2007): 689–92. http://dx.doi.org/10.4028/www.scientific.net/msf.544-545.689.

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ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl- Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.

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23

Kim, Eom-Ji, Won-Ho Lee, and Sung-Min Yoon. "Threshold voltage control of a thin-film transistor using an Al–Zn–O channel prepared using atomic layer deposition by controlling the Al dopant positions." RSC Advances 6, no. 95 (2016): 92534–40. http://dx.doi.org/10.1039/c6ra16683k.

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24

Choi, Woon-Seop. "ALD-Grown ZnO Thin-Film Transistor with a Polymeric Dielectric." Journal of the Korean Physical Society 54, no. 2 (2009): 678–81. http://dx.doi.org/10.3938/jkps.54.678.

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25

Liu, Yu-Rong, Jing Su, Pei-Tao Lai, and Ruo-He Yao. "Positive gate-bias temperature instability of ZnO thin-film transistor." Chinese Physics B 23, no. 6 (2014): 068501. http://dx.doi.org/10.1088/1674-1056/23/6/068501.

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26

Reyes, Pavel Ivanoff, Chieh-Jen Ku, Ziqing Duan, Yicheng Lu, Aniruddh Solanki, and Ki-Bum Lee. "ZnO thin film transistor immunosensor with high sensitivity and selectivity." Applied Physics Letters 98, no. 17 (2011): 173702. http://dx.doi.org/10.1063/1.3582555.

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27

Carcia, P. F., R. S. McLean, M. H. Reilly, and G. Nunes. "Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering." Applied Physics Letters 82, no. 7 (2003): 1117–19. http://dx.doi.org/10.1063/1.1553997.

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28

Zhang, Jieqiong, Zhixiong Li, Liangping Shen, Cong Ye, Baoyuan Wang, and Hao Wang. "Characteristics of ZnO thin film transistor using Ta2O5 gate dielectrics." Thin Solid Films 544 (October 2013): 281–84. http://dx.doi.org/10.1016/j.tsf.2013.03.103.

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29

Alshammari, Fwzah H., Pradipta K. Nayak, Zhenwei Wang, and Husam N. Alshareef. "Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics." ACS Applied Materials & Interfaces 8, no. 35 (2016): 22751–55. http://dx.doi.org/10.1021/acsami.6b06498.

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30

Ohya, Yutaka, Tsukasa Niwa, Takayuki Ban, and Yasutaka Takahashi. "Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition." Japanese Journal of Applied Physics 40, Part 1, No. 1 (2001): 297–98. http://dx.doi.org/10.1143/jjap.40.297.

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31

Fortunato, E. M. C., P. M. C. Barquinha, A. C. M. B. G. Pimentel, et al. "Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature." Advanced Materials 17, no. 5 (2005): 590–94. http://dx.doi.org/10.1002/adma.200400368.

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32

Tiwari, Nidhi, Han-Ping D. Shieh, and Po-Tsun Liu. "Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application." Materials Letters 151 (July 2015): 53–56. http://dx.doi.org/10.1016/j.matlet.2015.03.043.

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33

Dan, Wen Chao, Ya Dong Jiang, Hui Ling Tai, et al. "The Formaldehyde OTFT Sensor Based on the Airbrushed P3HT/ZnO Composite Thin Film." Key Engineering Materials 531-532 (December 2012): 400–403. http://dx.doi.org/10.4028/www.scientific.net/kem.531-532.400.

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The pure conducting polymer P3HT film is less sensitive to the formaldehyde (HCHO), and the pure ZnO film needs a high temperature to militate the HCHO, as a result, the P3HT/ZnO composite was fabricated on the organic thin film transistor (OTFT) by spraying to detect the HCHO at room temperature, the electrical properties and sensing properties of all the prepared OTFT devices were measured by Keithley 4200-SCS source measurement unit. What is more, the effect of different P3HT/ZnO composite masses on the response of sensors were tested, all the sensors showed a remarkable response to HCHO, a

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34

Mądzik, Mateusz Tomasz, Elangovan Elamurugu, Raquel Flores, and Jaime Viegas. "Impact of glycerol on Zinc Oxide based thin film transistors with Indium Molybdenum Oxide electrodes." MRS Advances 1, no. 4 (2016): 265–68. http://dx.doi.org/10.1557/adv.2016.26.

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ABSTRACTThin-film transistors (TFT) were fabricated at a room-temperature (RT) with zinc oxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. To isolate the gate oxide and gate electrode influence on the device performance, common gate configuration on a commercial substrate with thermal SiO2 (100 nm) was selected. A threshold voltage (VTh) of 10 V and ION/IOFF ratio of 1 × 10-5 were obtained. Once the reference data was taken transistors were exposed to glycerol. Temporary changes in device characteristics were observed due to the influence of glycerol, a low conductivity medium.

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35

Itohara, Daiki, Kazato Shinohara, Toshiyuki Yoshida, and Yasuhisa Fujita. "p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers." Journal of Nanomaterials 2016 (2016): 1–6. http://dx.doi.org/10.1155/2016/8219326.

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Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested

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36

Nakata, Mitsuru, Kazushige Takechi, Toshimasa Eguchi, Eisuke Tokumitsu, Hirotaka Yamaguchi, and Setsuo Kaneko. "Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors." Japanese Journal of Applied Physics 48, no. 8 (2009): 081608. http://dx.doi.org/10.1143/jjap.48.081608.

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37

Kim, Kyongmin, Eunkyeom Kim, Youngill Kim, and Kyoungwan Park. "Characteristics of ZnO Thin Film Transistors Fabricated Using a Microwave Sol-Gel Method." Korean Journal of Metals and Materials 52, no. 2 (2014): 155–61. http://dx.doi.org/10.3365/kjmm.2014.52.2.155.

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38

Hoffman, R. L., B. J. Norris, and J. F. Wager. "ZnO-based transparent thin-film transistors." Applied Physics Letters 82, no. 5 (2003): 733–35. http://dx.doi.org/10.1063/1.1542677.

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39

Ramirez, J. Israel, Yuanyuan V. Li, Hitesh Basantani, et al. "Radiation-Hard ZnO Thin Film Transistors." IEEE Transactions on Nuclear Science 62, no. 3 (2015): 1399–404. http://dx.doi.org/10.1109/tns.2015.2417831.

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40

Jeong, Yesul, Christopher Pearson, Hyun-Gwan Kim, et al. "Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors." RSC Advances 5, no. 45 (2015): 36083–87. http://dx.doi.org/10.1039/c5ra02989a.

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A ZnO transistor with carrier mobility of 3 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> using a SiO<sub>2</sub> insulator formed at low-temperature (180 °C) from solution-processed perhydropolysilazane.

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41

Kandpal, Kavindra, and Navneet Gupta. "Study of structural and electrical properties of ZnO thin film for Thin Film Transistor (TFT) applications." Journal of Materials Science: Materials in Electronics 28, no. 21 (2017): 16013–20. http://dx.doi.org/10.1007/s10854-017-7500-7.

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42

Kandpal, Kavindra, Navneet Gupta, Jitendra Singh, and Chandra Shekhar. "Study of ZnO/BST interface for thin-film transistor (TFT) applications." Surfaces and Interfaces 23 (April 2021): 100996. http://dx.doi.org/10.1016/j.surfin.2021.100996.

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43

Wu Ping, Zhang Jie, Li Xi-Feng, Chen Ling-Xiang, Wang Lei, and L Jian-Guo. "Ultraviolet photoresponse of ZnO thin-film transistor fabricated at room temperature." Acta Physica Sinica 62, no. 1 (2013): 018101. http://dx.doi.org/10.7498/aps.62.018101.

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44

WANG, Cong, Yu-rong LIU, Qiang PENG, and He HUANG. "Bias Stress Stability of Electric-double-layer ZnO Thin-film Transistor." Chinese Journal of Luminescence 43, no. 01 (2022): 129–36. http://dx.doi.org/10.37188/cjl.20210324.

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45

M, Amuthasurabi, Chandradass J, Seong-Ju Park, and Leenus Jesu Martin. "Reduction of self-heating effect in (Ga)ZnO thin film transistor." Surface Engineering 33, no. 11 (2017): 816–19. http://dx.doi.org/10.1080/02670844.2017.1294813.

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46

Yamauchi, Hiroshi, Masaaki Iizuka, and Kazuhiro Kudo. "Fabrication of Vertical Organic Light-Emitting Transistor Using ZnO Thin Film." Japanese Journal of Applied Physics 46, no. 4B (2007): 2678–82. http://dx.doi.org/10.1143/jjap.46.2678.

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47

Sun, Jie, Devin A. Mourey, Dalong Zhao, et al. "ZnO Thin-Film Transistor Ring Oscillators with 31-ns Propagation Delay." IEEE Electron Device Letters 29, no. 7 (2008): 721–23. http://dx.doi.org/10.1109/led.2008.923206.

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48

Liu, Rongsheng, Minfang Peng, Haiyan Zhang, Xun Wan, and Meie Shen. "Atomic layer deposition of ZnO on graphene for thin film transistor." Materials Science in Semiconductor Processing 56 (December 2016): 324–28. http://dx.doi.org/10.1016/j.mssp.2016.09.016.

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49

Shen, Yi-Chun, Chun-Hsu Yang, Shu-Wen Chen, Shou-Hao Wu, Tsung-Lin Yang, and Jian-Jang Huang. "IGZO thin film transistor biosensors functionalized with ZnO nanorods and antibodies." Biosensors and Bioelectronics 54 (April 2014): 306–10. http://dx.doi.org/10.1016/j.bios.2013.10.043.

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50

Oh, Byeong-Yun, Young-Hwan Kim, Hee-Jun Lee, et al. "High-performance ZnO thin-film transistor fabricated by atomic layer deposition." Semiconductor Science and Technology 26, no. 8 (2011): 085007. http://dx.doi.org/10.1088/0268-1242/26/8/085007.

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