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Relevant bibliographies by topics / ZnS / CdTe heterojunction

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Academic literature on the topic 'ZnS / CdTe heterojunction'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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Journal articles on the topic "ZnS / CdTe heterojunction"

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Toma, O., L. Ion, S. Iftimie, et al. "Physical properties of rf-sputtered ZnS and ZnSe thin films used for double-heterojunction ZnS/ZnSe/CdTe photovoltaic structures." Applied Surface Science 478 (June 2019): 831–39. http://dx.doi.org/10.1016/j.apsusc.2019.02.032.

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Ahmed, Sheikh Rashel Al, Jannatul Ferdous, and Md Suruz Mian. "Development of a novel CdTe/ZnS/ZnTe heterojunction thin-film solar cells: a numerical approach." IOP SciNotes 1, no. 2 (2020): 024802. http://dx.doi.org/10.1088/2633-1357/aba1f7.

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Zyoud, Samer H., Ahed H. Zyoud, Naser M. Ahmed, and Atef F. I. Abdelkader. "Numerical Modelling Analysis for Carrier Concentration Level Optimization of CdTe Heterojunction Thin Film–Based Solar Cell with Different Non–Toxic Metal Chalcogenide Buffer Layers Replacements: Using SCAPS–1D Software." Crystals 11, no. 12 (2021): 1454. http://dx.doi.org/10.3390/cryst11121454.

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Cadmium telluride (CdTe), a metallic dichalcogenide material, was utilized as an absorber layer for thin film–based solar cells with appropriate configurations and the SCAPS–1D structures program was used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin–film buffer layer is frequently employed as a traditional n–type heterojunction partner. In this study, numerical simulation was used to determine a suitable non–toxic material for the buffer layer that can be used instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS and In2S3) and

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Wang, Yuzhe, Yueqi Zhong, Jiangzhi Zi, and Zichao Lian. "Type-I CdSe@CdS@ZnS Heterostructured Nanocrystals with Long Fluorescence Lifetime." Materials 16, no. 21 (2023): 7007. http://dx.doi.org/10.3390/ma16217007.

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Conventional single-component quantum dots (QDs) suffer from low recombination rates of photogenerated electrons and holes, which hinders their ability to meet the requirements for LED and laser applications. Therefore, it is urgent to design multicomponent heterojunction nanocrystals with these properties. Herein, we used CdSe quantum dot nanocrystals as a typical model, which were synthesized by means of a colloidal chemistry method at high temperatures. Then, CdS with a wide band gap was used to encapsulate the CdSe QDs, forming a CdSe@CdS core@shell heterojunction. Finally, the CdSe@CdS co

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Хребтов, А. И., А. С. Кулагина, В. В. Данилов та ін. "Фотодинамика люминесценции гибридных наноструктур InP/InAsP/InP ННК, пассивированных слоем ТОРО-CdSe/ZnS КТ". Физика и техника полупроводников 54, № 9 (2020): 952. http://dx.doi.org/10.21883/ftp.2020.09.49838.32.

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The results of studies of the photodynamics of the excited state decay of a hybrid semiconductor nanostructure, which is an array of InP nanowires with InAsP nanoinsertions passivated with a layer of TOPO (trioctylphosphine oxide) containing colloidal CdSe/ZnS quantum dots, are presented. Time- and spectrally resolved measurement of photoluminescence InAsP nanoinsertions in the near infrared region at temperatures of 80 K and 293 K were made. The presence of a quasi-Langmuir layer of TOPO-CdSe/ZnS quantum dots on the surface of InP/InAsP/InP nanowires leads to an increase in the duration of ra

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Khanmamedova, Elmira. "ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF P-CDS/P-CDTE/ZNTE/ZNCDS HETEROJUNCTIONS." Grail of Science, no. 21 (November 5, 2022): 126–29. http://dx.doi.org/10.36074/grail-of-science.28.10.2022.023.

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Studies show that during thermal processing, major changes occur in p-CdS/p-CdTe/ZnTe/ZnCdS heterojunctions. The nature of the change in electrical and photoelectric properties of heterojunctions depending on thermal processing conditions shows that the volume charge layer expands due to the presence of acceptor levels near the surface of the Zn1-xCdxS layer (Fig. 1). Therefore, the capacity of p-n heterojunctions decreases. The increase in photoresponse across all spectra indicates that the compensation of donor-type natural defects with acceptor levels results in the formation of a high-resi

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Delahoy, Alan E., Shou Peng, Payal Patra, et al. "Cadmium Tin Oxide and Zinc Magnesium Oxide Prepared by Hollow Cathode Sputtering for CdTe Photovoltaics." MRS Advances 2, no. 53 (2017): 3203–14. http://dx.doi.org/10.1557/adv.2017.407.

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ABSTRACTThis work reports the fabrication and characterization of superstrate-type Zn1-xMgxO/CdTe heterojunction solar cells on both CdxSnyO and commercial SnO2:F transparent conducting oxides (TCOs) in which the ZMO and CTO layers are produced for the first time by hollow cathode sputtering. The sputtering is conducted in a reactive mode using metal or alloyed metal targets fitted to a custom-made linear cathode. It is notable that the CdS buffer layer conventionally employed in CdTe solar cells is entirely replaced by the ZMO window layer. The use of ZMO is found to eliminate the blue loss a

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Lee, Seok Ho, Hyunsoo Lee, Sung-yeoun Park, et al. "Hybrid effects of CdSe/ZnS quantum dots on p–n heterojunction organic nanowire." Synthetic Metals 163 (January 2013): 1–6. http://dx.doi.org/10.1016/j.synthmet.2012.12.022.

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Ashith, V. K., K. Priya, and Gowrish K. Rao. "The electrical properties of n-CdS/p-CdTe and n-ZnS/p-CdTe heterojunctions fabricated by a combination of SILAR and vacuum deposition techniques." Physica B: Condensed Matter 614 (August 2021): 413025. http://dx.doi.org/10.1016/j.physb.2021.413025.

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Ting, NI, ZOU Fan, JIANG Yu-Rong, and YANG Sheng-Yi. "To Improve the Efficiency of Bulk Heterojunction Organic Solar Cells by Incorporating CdSe/ZnS Quantum Dots." Acta Physico-Chimica Sinica 30, no. 3 (2014): 453–59. http://dx.doi.org/10.3866/pku.whxb201312274.

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Dissertations / Theses on the topic "ZnS / CdTe heterojunction"

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Kurbatov, Denys Ihorovych, Денис Игоревич Курбатов, Денис Ігорович Курбатов, et al. "Sublimation and microstructural investigations of ZnS/CdTe heterojunction." Thesis, Вид-во СумДУ, 2009. http://essuir.sumdu.edu.ua/handle/123456789/4222.

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Доброжан, Олександр Анатолійович, Александр Анатольевич Доброжан, Oleksandr Anatoliyovych Dobrozhan, et al. "Optical Losses of Thin Solar Cells on the Basis of n-ZnS / p-CdTe and n-CdS / p-CdTe Heterojunctions." Thesis, Sumy State University Publishing, 2013. http://essuir.sumdu.edu.ua/handle/123456789/33898.

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The optical reflection and absorption losses in the accessory layers of solar cells based on n-ZnS / p- CdTe and n-CdS / p-CdTe heterojunctions are defined in this work. Aluminum doped zinc oxide is used as the front conductive layer material. It is shown that the replacement of traditional window material (CdS) for a wide-one (ZnS) leads to an increase in accessory solar cells layers transmittance. When the thickness of the window layers is 50 nm, the transmittance using ZnS windows with the wavelength of 380-500 nm is higher in 7-40 % than the corresponding value for CdS. At 300 nm for t

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Dobrozhan, O. A., T. O. Berestok, D. I. Kurbatov, A. S. Opanasyuk, N. M. Opanasyuk, and V. F. Nefedchenko. "Optical Losses of Thin Solar Cells on the Basis of n-ZnS / p-CdTe and n-CdS / p-CdTe Heterojunctions." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35590.

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The optical reflection and absorption losses in the accessory layers of solar cells based on n-ZnS / p- CdTe and n-CdS / p-CdTe heterojunctions are defined in this work. Aluminum doped zinc oxide is used as the front conductive layer material. It is shown that the replacement of traditional window material (CdS) for a wide-one (ZnS) leads to an increase in accessory solar cells layers transmittance. When the thickness of the window layers is 50 nm, the transmittance using ZnS windows with the wavelength of 380-500 nm is higher in 7-40 % than the corresponding value for CdS. At 300 nm for

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Бересток, Таїсія Олександрівна, Таисия Александровна Бересток, Taisiia Oleksandrivna Berestok, et al. "Modeling of the basic solar cells characteristics on the basis of n-ZnS/p-CdTe and n-CdS/p-CdTe heterojunctions." Thesis, Прикарпатський національний університет імені Василя Стефаника, 2013. http://essuir.sumdu.edu.ua/handle/123456789/34071.

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In this work we used SCAPS-3200 software environment for the realistic modeling of the basic electrical characteristics (current density of short circuit (Jsc), open circuit voltage (Uoc), fill factor (FF) and efficiency (h)) of thin solar cells films with n-ZnS/p-CdTe heterojunction. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34071

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Бересток, Таїсія Олександрівна, Таисия Александровна Бересток, Taisiia Oleksandrivna Berestok, et al. "Solar Cells Efficiency On The Basis Of n-ZnS/p-CdTe heterojunctions with optical losses consideration." Thesis, Львівський національний університет, 2013. http://essuir.sumdu.edu.ua/handle/123456789/34059.

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The aim of this work is to define the maximal theoretical SC efficiency value, that have the construction of glass/n-ZnO/n-ZnS/p-CdTe with the optical losses consideration on the interfaces of contacting materials depending on the thickness of these layers. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34059

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Liu, Xilan. "Polymer Photodetectors: Device Structure, Interlayer and Physics." University of Akron / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=akron1384334220.

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BOUCHET-BOUDET, NATHALIE. "Etude par diffraction de rayons x d'heterostructures epitaxiees a base des semi-conducteurs ii-vi cdte et znte." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10153.

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Ce memoire traite de la caracterisation structurale par diffraction et reflectivite de rayons x d'heterostructures de semi-conducteurs ii-vi cdte et znte. Ce sont des heterostructures a fort desaccord parametrique, elaborees par epitaxie par jets moleculaires. Ce travail s'articule autour de deux themes: la caracterisation de reseaux de fils quantiques de znte, elabores par croissance par avancee de marche sur une surface vicinale de cdte (001), et l'etude des correlations verticales dans des superreseaux cd#0#. #8zn#0#. #2te/cdte et des superreseaux d'insertions fractionnaires de znte dans cd

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Le, Cunff Delphine. "Epitaxie de terres rares sur les semiconducteurs II-VI CdTe et CdZnTe : croissance, dopage et caractérisation électrique." Université Joseph Fourier (Grenoble ; 1971-2015), 1995. http://www.theses.fr/1995GRE10216.

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Ce travail concerne l'elaboration de contacts metalliques a base de terre rare sur les semi-conducteurs ii-vi cdte et cdznte. La croissance des couches minces a ete realisee en epitaxie par jets moleculaires et nous avons mis en evidence les differentes reconstructions que presente la surface des semi-conducteurs ainsi que leur influence sur les conditions de croissance. Le dopage de type n et p des couches semi-conductrices a ete obtenu avec differents elements. Nous montrons que l'iode est un candidat plus favorable que l'indium pour le dopage n des couches de cdte et de cdznte. En ce qui co

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Book chapters on the topic "ZnS / CdTe heterojunction"

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Chate, Prashant A., and Dattatray J. Sathe. "DESIGN AND FABRICATION OF ZnSe BASED SOLAR CELLS." In Futuristic Trends in Renewable & Sustainable Energy Volume 3 Book 2. Iterative International Publishers, Selfypage Developers Pvt Ltd, 2024. http://dx.doi.org/10.58532/v3bars2p1ch13.

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Direct wide band gap zinc selenide (ZnSe) would be a perfect match for solar cell devices. In photoelectrochemical cells, Znse is act as n-type photoelectrode. Electrolytes, redox couple, solvent, ionic liquids, cations and additives decide the efficiency of the devices. ZnSe is appropriate passivation substance to generate a type II core or shell arrangement for CdSe/cadmium sulphie quantum dots There are some benefits related with ZnSe heterojunction based solar cells above silicon homojunction

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Fardi, Hamid, and Fatima Buny. "Characterization and Modeling of ZnO/CdS/CdTe Heterojunction Thin Film Solar Cells." In Engineering Research: Perspectives on Recent Advances Vol. 2. BP International, 2025. https://doi.org/10.9734/bpi/erpra/v2/3818.

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Conference papers on the topic "ZnS / CdTe heterojunction"

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Dixit, Khushboo, and Gufran Ahmad. "Optimizing the performance of ZnO nanowire-based CdS-CdTe thin film heterojunction solar cells through Numerical simulation." In 2024 4th International Conference on Emerging Frontiers in Electrical and Electronic Technologies (ICEFEET). IEEE, 2024. https://doi.org/10.1109/icefeet64463.2024.10866934.

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Focsha, Alexandru, Petru Gashin, and Alexei Simashkevich. "Photovoltaic Phenomena in Thin Film ZnTe-CdSe Heterojunctions." In ASME 2001 Solar Engineering: International Solar Energy Conference (FORUM 2001: Solar Energy — The Power to Choose). American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/sed2001-141.

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Abstract Thin layer ZnTe-CdSe heterojunctions were produced by vapor phase epitaxial growth of ZnTe and CdSe layers on mica and single-crystal ZnSe substrates. These heterojunctions photosensitivity covers the wavelength region of 0.56–0.85 μm. The shape of photosensitivity spectral dependence of ZnTe-CdSe heterojunction depends on the components thickness and their doping level. Thin layer ZnTe-CdSe epitaxial heterojunction parameters under illumination of 80 mW/cm2 (AM1.5) are: FF=0.53, Uoc=0.72V, Isc=14.8 mA/cm2, efficiency η=7.1%. Thin film polycrystalline ZnTe-CdSe heterojunctions having

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Chung, C., and F. Jain. "Two-dimensional modal analysis of blue-green lasers using ZnSe based p-n and metal-insulator-semiconductor (MIS) heterostructures." In Compact Blue-Green Lasers. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/cbgl.1992.the4.

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The wide energy gap II-VI compounds semiconductors, such as ZnSe, ZnS, MnSe, CdSe, and their ternary and quaternary alloys, are particularly suitable for the realization of short wavelength optoelectronic devices. These materials have been found to exhibit excellent luminescent properties as demonstrated by photoluminescent spectra [1] and the successful operation of photopumped lasers [2]. Recently, Haase et al[3] reported p-n heterojunction injection laser operating at cryogenic temperatures. Currently, several research groups are investigating p-type doping of ZnSe using MBE, MOCVD and CBE

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Ozkan, Cengiz S. "Assembly at the Nanoscale: Heterojunctions of Carbon Nanotubes and Nanocrystals (Keynote)." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-82363.

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This paper reports the controlled synthesis of multi-walled Carbon Nanotube-Quantum Dot (CNT-QD) heterojunctions using the Ethylene Carbodiimide Coupling procedure (EDC). Thiol stabilized ZnS capped CdSe quantum dots containing amine terminal groups (QD-NH2) were conjugated with acid treated Multi-Walled Carbon Nanotubes (MWCNT) ranging from 400 nm to 4μm in length. SEM, TEM, EDS and FTIR were used to characterize the conjugation process.

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Ozkan, Cengiz S. "Assembly at the Nanoscale: Towards Functional Nanostructured Materials (Invited)." In ASME 2006 Multifunctional Nanocomposites International Conference. ASMEDC, 2006. http://dx.doi.org/10.1115/mn2006-17078.

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This paper reports the self assembly of functional nanostructured materials including multi-walled Carbon Nanotube-Quantum Dot (CNT-QD) heterojunctions using the Ethylene Carbodiimide Coupling procedure (EDC). Thiol stabilized ZnS capped CdSe quantum dots containing amine terminal groups (QD-NH2) were conjugated with acid treated Multi-Walled Carbon Nanotubes (MWCNT) ranging from 400 nm to 4μm in length. SEM, TEM, EDS and FTIR were used to characterize the conjugation process.

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Pena, Juan Luis, Victor Rejon, Oscar Ares, Juan M. Camacho, and Araceli Rios-Flores. "The ZnO-reflectance effect on the heterojunction ITO/ZnO/CdS/CdTe." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). IEEE, 2012. http://dx.doi.org/10.1109/pvsc.2012.6317995.

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Potlog, Tamara. "Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions." In 2012 International Semiconductor Conference (CAS 2012). IEEE, 2012. http://dx.doi.org/10.1109/smicnd.2012.6400790.

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Potlog, T., N. Spalatu, V. Fedorov, et al. "The performance of thin film solar cells employing photovoltaic ZnSe/CdTe, CdS/CdTe and ZnTe/CdTe heterojunctions." In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186211.

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Bump, Buddy J., Grant T. Olson, Richard Savage, and Robert S. Echols. "Increasing optical density of single-layer multi-polymer bulk-heterojunction OPVs using CdSe(ZnS) core(shell) quantum dots." In SPIE Organic Photonics + Electronics, edited by Zakya H. Kafafi, Paul A. Lane, and Ifor D. W. Samuel. SPIE, 2014. http://dx.doi.org/10.1117/12.2061955.

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