Relevant bibliographies by topics / ZnSe1-x Tex

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'ZnSe1-x Tex'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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Journal articles on the topic "ZnSe1-x Tex"

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Lee, C. D., H. K. Kim, H. L. Park, C. H. Chung, and S. K. Chang. "Luminescence from free and self-trapped excitons in ZnSe1-x Tex." Journal of Luminescence 48-49 (January 1991): 116–20. http://dx.doi.org/10.1016/0022-2313(91)90087-c.

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Larramendi, Erick M., Karla Gutiérrez Z-B, Christof Arens, Ulrike Woggon, Detlef Schikora, and Klaus Lischka. "Growth of ZnSe(1−x)Tex epilayers by isothermal closed space sublimation." Journal of Applied Physics 107, no. 10 (2010): 103510. http://dx.doi.org/10.1063/1.3374706.

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El-Nahass, M. M., B. A. Khalifa, A. M. El-Rahman, and R. El-Ariny. "Structural and optical properties of ZnSe x Te1−-x solid solutions in thin-film form." Applied Physics A Materials Science and Processing 63, no. 1 (1996): 81–86. http://dx.doi.org/10.1007/bf01579749.

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Belyaev, Alexey P., Dmitry A. Mokhorov, and Vladimir V. Antipov. "The composition of the vapor phase upon evaporation of a mechanical mixture of cadmium and zinc selenotelluride powders." Butlerov Communications 63, no. 8 (2020): 80–85. http://dx.doi.org/10.37952/roi-jbc-01/20-63-8-80.

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The effect temperature has on the composition of a vapor phase passed through a thermal field after the evaporation of a mechanical mixture of the powders of cadmium and zinc selenotelluride is studied. It is found that the composition of the vapor phase can be changed throughout the range of concentrations by varying the temperature. The results of the study are satisfactorily explained by the effect temperature has on the particle distribution function in correspondence to the weights of the molecules constituting the mixture. There were virtually no molecules of the evaporated substance in
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Batstone, Joanna L. "TEM and cathodoluminescence of precipitates in II-VI semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 488–89. http://dx.doi.org/10.1017/s0424820100104509.

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Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent p
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Belyaev, A. P., V. P. Rubets, and I. P. Kalinkin. "Current transport processes in In2O3-ZnSe-(Zn1 − x Cdx Te)1 − y(In2 Te3)y heterostructures." Thin Solid Films 256, no. 1-2 (1995): 23–30. http://dx.doi.org/10.1016/0040-6090(94)06248-x.

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Bousquet, V., M. Laügt, P. Vennéguès, E. Tournié, and J. P. Faurie. "Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer." Journal of Crystal Growth 201-202 (May 1999): 498–501. http://dx.doi.org/10.1016/s0022-0248(98)01385-2.

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Ji, W., H. S. Tan, Z. C. Feng, and P. Becla. "Low Threshold ZnSe1−x Tex Optical Limiters." MRS Proceedings 374 (1994). http://dx.doi.org/10.1557/proc-374-79.

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AbstractWe report an experimental investigation of optical limiting with bulk ZnSe1−xTex crystals at wavelengths just below the band edge, using nanosecond laser pulses. The limiting threshold as low as a few mJ/cm2 has been demonstrated. The generation of free charge carriers by singlephoton absorption, and subsequent free-carrier nonlinearities (nonlinear absorption and selfdefocusing) are responsible for the limiting behavior.
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Wang, Hailong, Jie Cui, Aidong Shen, Liang Xu, Yunliang Chen, and Yuhua Shen. "MBE Growth and Properties of Wide Band-Gap II-VI Strained-Layer Superlattice." MRS Proceedings 242 (1992). http://dx.doi.org/10.1557/proc-242-227.

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ABSTRACTThe (ZnSe) /(ZnS ), strained layer super-lattices (SLSs) on (100) GaAs and (ZnTe)/(ZnSe) SLSs on (100) InP have been grown by molecular beam epitaxy (MBE) and atomic layer epitaxy (ALE). The structural characteristics of these SLSs were investigated in situ RHEED observation, low-angle X-ray diffraction spectra, TED image and AES analysis. The optical properties of the SLSs, such as refractive index of superlattice materials, photoluminescence (PL) spectra, transient PL spectra, Raman spectra, far-infrared reflectivity spectra and Optical nonlinear have been studied.
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Petruzzello, J., O. Boser, and P. Kellawon. "Tem Investigation of Strain Relaxation in ZnSe/ZnSxSe1−x Superlattices Grown by MBE." MRS Proceedings 104 (1987). http://dx.doi.org/10.1557/proc-104-629.

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ABSTRACTThe relaxation mechanisms of ZnSe/ZnSxSe1−x superlattices grown by molecular beam epitaxy was studied by transmission rAeclmn icroscopy. The relaxation of misfit strain occured in part by conventional misfit dislocations that reside in the superlattice-buffer layer interface and in part by dislocations pinned at individual layer interfaces of the superlattice. The generation of misfit dislocations at the superlattice-buffer layer interface is inhibited by the misfit strain between individual superlattice layers. Therefore a significant amount of overall strain is present even after 1 μ
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Dissertations / Theses on the topic "ZnSe1-x Tex"

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Suthagar, J., and Kissinger J. K. Suthan. "Synthesis and Characterization of ZnSe1-xTex Alloy Thin Films Deposited by Electron Beam Technique." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35012.

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ZnSe1-x Tex solid solutions were prepared and films were deposited on glass substrates with x 0.2, 0.4, 0.6 and 0.8. DTA/TGA analysis was carried out to study the alloy formation temperature. Structural studies by XRD results showed the polycrystalline nature of the films. The Full Width at Half Maximum (FWHM) values were observed from the XRD pattern and used to evaluate the microstructural parameters like crystallite size, strain, dislocation density and stacking fault density for all the films with x 0.2, 0.4, 0.6 and 0.8. These films were coated with a thickness of about 200 nm on gla
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Vivet, Nicolas. "Elaboration et caractérisation de films minces Cr2+:ZnSe nanostructurés pour la fabrication de microlasers émettant dans le moyen infrarouge." Phd thesis, Université de Caen, 2008. http://tel.archives-ouvertes.fr/tel-00347093.

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Il existe une demande de plus en plus importante pour des sources laser bon marché émettant dans le moyen infrarouge (MIR) à température ambiante pour différentes applications incluant la détection des constituants atmosphériques, la communication optique et le domaine de la médecine. De part ses propriétés optiques et structurales, le Cr2+: ZnSe est devenu le candidat idéal pour une émission largement accordable dans la région 2-3 µm. <br />Dans l'objectif de développer un laser compact pompé électriquement, des films minces de Cr2+:ZnSe ont été élaborés à température ambiante par pulvérisati
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Chaïeb, Abderrahmane. "Etude structurale par diffraction X et optique linéaire et non linéaire de composites à base de nanocristaux semi-conducteurs (CdSe, ZnSe) dispersés dans des matrices hôtes organique (PMMA) et minérale (KBr, KCl)." Phd thesis, Université d'Angers, 2009. http://tel.archives-ouvertes.fr/tel-00480577.

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Le présent travail a pour but l'élaboration ainsi que la caractérisation structurale et optique de matériaux composites à base de nanocristaux semi-conducteurs à grand gap dispersés dans des matrices optiquement transparentes dans le domaine UV Visible. La première partie du travail expose la problématique du sujet à étudier et met en évidence l'actualité du travail envisagé. Elle donne un aperçu sur les propriétés optiques des nanocomposites à base de semi conducteurs et fait apparaitre les raisons justifiant le choix des matériaux adoptés pour la fabrication des nanocomposites étudiés : CdSe
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Book chapters on the topic "ZnSe1-x Tex"

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Adachi, Sadao. "Zinc Seleno-Telluride (ZnSe x Te1-x )." In Optical Constants of Crystalline and Amorphous Semiconductors. Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_48.

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Conference papers on the topic "ZnSe1-x Tex"

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Matras-Postolek, Katarzyna, A. Zaba, S. Sovinska, and D. Bogdal. "Microwave-assisted preparation of ZnS and ZnSe nanocrystals with different morphologies for photodegradation process of organic dyes." In Ampere 2019. Universitat Politècnica de València, 2019. http://dx.doi.org/10.4995/ampere2019.2019.9998.

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Zinc sulphide (ZnS) and zinc selenide (ZnSe) and manganese-doped and un-doped with different morphologies from 1D do 3D microflowers were successfully fabricated in only a few minutes by solvothermal reactions under microwave irradiation. In order to compare the effect of microwave heating on the properties of obtained nanocrystals, additionally the synthesis under conventional heating was conducted additionally in similar conditions. The obtained nanocrystals were systematically characterized in terms of structural and optical properties using X-ray diffraction (XRD), scanning electron micros
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Mansour, Nastaran, Giancarlo Reali, and M. J. Soileau. "Laser-generated ripple patterns on dielectrics and intermediate band-gap semiconductors." In OSA Annual Meeting. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.wj15.

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We report the results of studies of laser-generated ripple patterns on intermediate gap semiconductors (e.g., ZnS, ZnSe) and dielectrics of various indices of refraction. The experiment has been carried out at normal incidence using mainly a CO2 TEA laser which produced TEM00 pulses of 150-ns duration. Preliminary results of irradiation with 1.06 µm, 15-ns pulses have also been produced. The results confirmed the formation of coherent structures on the front or rear surface of a damaged material. In particular, for a variety of transparent dielectrics, we carefully determined the ripple spacin
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