Relevant bibliographies by topics / ZnSnO3

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  2. Dissertations / Theses
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Academic literature on the topic 'ZnSnO3'

Author: Grafiati
Published: 10 September 2021
Last updated: 3 February 2022

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Journal articles on the topic "ZnSnO3"

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AN, SOYEON, CHANGHYUN JIN, HYUNSU KIM, SANGMIN LEE, BONGYONG JEONG, and CHONGMU LEE. "SYNTHESIS, STRUCTURE, AND LUMINESCENCE PROPERTIES OF ZnSnO3 NANOWIRES." Nano 07, no. 02 (April 2012): 1250013. http://dx.doi.org/10.1142/s1793292012500130.

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ZnSnO3 nanowires were synthesized on Si substrates by thermal evaporation of a mixture of ZnO, SnO2 and graphite powders. The nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The ZnSnO3 nanowires varied from 10 to 100 nm in diameter and up to a few hundred of micrometers in length. Transmission electron microscopy and X-ray diffraction revealed that the nanowires are multiphase nanostructures containing ZnSnO3, Zn2SnO4, ZnO, and SnO2 phases. Photoluminescence measurements showed that ZnSnO3 nanowires had a sharp ultraviolet emission peak at approximately 375 nm as well as a broad green emission band centered at approximately 510 nm. The violet emission of ZnSnO3 nanowires exhibits a blue shift by approximately 5 nm compared to that of ZnO nanowires and the visible emission of ZnO nanowires shifted from the orange region to the green region, which should be attributed to the narrowing of Eg. Thermal annealing enhanced the green emission but degraded the ultraviolet emission of the ZnSnO3 nanowires. In addition, the origin of the enhanced luminescence of ZnSnO3 nanowires compared to ZnO and SnO2 nanowires is discussed.
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Mukherjee, Devajyoti, Mahesh Hordagoda, Corisa Kons, Anuja Datta, Sarath Witanachchi, and Pritish Mukherjee. "Measurements of Polarization Switching in LiNbO3-type ZnSnO3/ZnO Nanocomposite Thin Films." MRS Proceedings 1729 (2015): 111–16. http://dx.doi.org/10.1557/opl.2015.264.

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ABSTRACTWe report the measurements of ferroelectricity in LiNbO3 (LN)-type ZnSnO3 /ZnO nanocomposite thick films deposited on Pt-Si substrates using a novel combined chemical/physical technique. Phase-pure LN-type ZnSnO3 nanorods (NRs) were first synthesized using a low temperature solvothermal process and characterized in detail using X-ray diffraction, electron microscopy and Raman spectroscopy. The prototype device for polarization measurements was fabricated by depositing the as-prepared LN-type ZnSnO3 NRs onto conducting Pt-Si substrates (also served as bottom electrodes). A dielectric filler-layer of polycrystalline ZnO was deposited on top using pulsed laser deposition to fabricate LN-type ZnSnO3 /ZnO nanocomposite films. Polarization measurements of the Pt/ZnSnO3+ZnO/Pt nanocomposite capacitors at 300K showed indication of polarization switching in the hysteresis loops with a remanent polarization (Pr) of 13 μC/cm2 at a low applied voltage of 8 V. The work provides information on the coherent design of future FE memory devices based on the emerging non-toxic Pb-free material LN-ZnSnO3.
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Zang, G. Z., J. F. Wang, H. C. Chen, W. B. Su, W. X. Wang, P. Qi, and C. M. Wang. "New ZnSnO3-based varistor system." Journal of Materials Science 39, no. 10 (May 2004): 3537–39. http://dx.doi.org/10.1023/b:jmsc.0000026971.47213.2a.

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Wang, Qiong, Na Yao, Chen Liu, Dongmin An, Yan Li, Yunling Zou, and Xiaoqiang Tong. "Synthesis of Hollow ZnSnO3 Nanospheres with High Ethanol Sensing Properties." Journal of Nanomaterials 2016 (2016): 1–5. http://dx.doi.org/10.1155/2016/2381823.

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Hollow ZnSnO3 nanospheres were synthesized by a hydrothermal method using ZnO nanospheres as the hard template and raw material simultaneously. The combined characterizations of X-ray diffraction (XRD), scanning electron microscope (SEM) and high-resolution transmission electron microscopy (HRTEM) confirmed the successful preparation of hollow ZnSnO3 nanospheres. The gas-sensing results indicated that the sensor made from hollow ZnSnO3 nanospheres exhibited high sensitivity, good selectivity, and stability to ethanol at a low operating temperature of 200°C. The sensitivity was about 32 and the response and recovery time were about 4 s and 30 s for 100 ppm ethanol, respectively. The enhancement in gas-sensing properties was attributed to the hollow nanostructures and high specific surface areas of ZnSnO3.
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Anucha, Chukwuka Bethel, IIknur Altin, Emin Bacaksiz, Vassilis N. Stathopoulos, Ismail Polat, Ahmet Yasar, and Ömer Faruk Yüksel. "Silver Doped Zinc Stannate (Ag-ZnSnO3) for the Photocatalytic Degradation of Caffeine under UV Irradiation." Water 13, no. 9 (May 4, 2021): 1290. http://dx.doi.org/10.3390/w13091290.

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Contaminants of emerging concerns (CECs) spread across a wide range of organic product compounds. As biorecalcitrants, their removal from conventional wastewater treatment systems remains a herculean task. To address this issue, heterogenous solar driven advanced oxidation process based-TiO2 and other semiconductor materials has been extensively studied for their abatement from wastewater sources. In this study, we have synthesized by hydrothermal assisted co-precipitation Ag doped ZnSnO3. Structural and morphological characterizations were performed via X-ray diffraction (XRD), Fourier transform infra-red (FTIR), N2 adsorption-desorption at 77 K by Brunauer-Emmet-Teller (BET) and Barrett, Joyner, and Halenda (BJH) methods, Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy coupled with Energy dispersive spectroscopy (SEM-EDS), and UV-visible absorption in Diffuse reflectance spectroscopy (UV-vis/DRS) mode. Crystallite size estimate for Ag-ZnSnO3 and undoped form was 19.4 and 29.3 nm, respectively, while respective TEM particle size estimate was 79.0 nm and 98.2 nm. BET surface area and total pore volume by BJH for Ag-ZnSnO3 were estimated with respective values of 17.2 m2/g and 0.05 cm3/g in comparison to 18.8 m2/g and 0.06 cm3/g for ZnSnO3. Derived energy band gap (Eg) values were 3.8 eV for Ag-ZnSnO3 and 4.2 eV for ZnSnO3. Photocatalytic performance of Ag-ZnSnO3 was tested towards caffeine achieving about 68% removal under (natural) unmodified pH = 6.50 and almost 100% removal at initial pH around 7.5 after 4 h irradiation. The effect of initial pH, catalyst dosage, pollutant concentration, charge scavengers, H2O2, contaminant inorganic ions (anions) as well as humic acid (HA) on the photocatalyst activity over caffeine degradation were assessed. In accordance with the probation test of the reactive species responsible for photocatalytic degradation process, a reaction mechanism was deduced.
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Choi, Kyung Hyun, Ghayas Uddin Siddiqui, Bong-su Yang, and Maria Mustafa. "Synthesis of ZnSnO3 nanocubes and thin film fabrication of (ZnSnO3/PMMA) composite through electrospray deposition." Journal of Materials Science: Materials in Electronics 26, no. 8 (May 20, 2015): 5690–96. http://dx.doi.org/10.1007/s10854-015-3121-1.

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Datta, Anuja, Devajyoti Mukherjee, Corisa Kons, Sarath Witanachchi, and Pritish Mukherjee. "Ferroelectricity in Strategically Synthesized Pb-free LiNbO3-type ZnSnO3 Nanostructure Arrayed Thick Films." MRS Proceedings 1729 (2015): 105–10. http://dx.doi.org/10.1557/opl.2015.171.

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ABSTRACTWe report the evidence of ferroelectricity from LN-type ZnSnO3 nanostructure arrayed thick films (10 - 20 µm) on Si with remanent polarization value as high as ≈ 30 µC/cm2 in nanowire arrays. A combined pulsed-laser deposition (PLD) technique and a solvothermal synthesis scheme was adopted to effectively synthesize the nanostructured samples assisted by conducting ZnO template-layers. The similar crystal symmetry and comparable lattice parameter between ZnO and LN-type ZnSnO3 facilitated the dense growth of high-quality ZnSnO3 nanostructure arrays in the form of one-dimensional vertical nanowires, nanorods and two-dimensional nanoflakes. The strategic synthesis method allowed controlled tunability of the morphology, crystallinity, and packing density of ZnSnO3 nanostructures, which in turn facilitated the measurement of ferroelectric (FE) properties using a simple sandwich-device geometry. Analyses of the FE properties in relation to the structures are presented and their potential for designing future Pb-free FE devices for non-volatile memory applications is discussed.
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Choi, Yoon-Young, Han-Ki Kim, Hyun-Woo Koo, Tae-Woong Kim, and Sung-Nam Lee. "Flexible ZnSnO3/Ag/ZnSnO3 multilayer electrodes grown by roll-to-roll sputtering on flexible polyethersulfone substrates." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29, no. 6 (November 2011): 061502. http://dx.doi.org/10.1116/1.3632999.

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Lin, Hung-Ming, and Kao-Shuo Chang. "Synergistic piezophotocatalytic and photoelectrochemical performance of poly(vinylidene fluoride)–ZnSnO3 and poly(methyl methacrylate)–ZnSnO3 nanocomposites." RSC Advances 7, no. 49 (2017): 30513–20. http://dx.doi.org/10.1039/c7ra05175a.

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This study investigated the piezophotocatalytic and photoelectrochemical (PEC) properties of poly(vinylidene fluoride) (PVDF)– and poly(methyl methacrylate) (PMMA)–ZnSnO3 (ZTO) nanocomposites.
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FOUAD, O. A., G. GLASPELL, and M. S. EL-SHALL. "STRUCTURAL, OPTICAL AND GAS SENSING PROPERTIES OF ZnO, SnO2 AND ZTO NANOSTRUCTURES." Nano 05, no. 04 (August 2010): 185–94. http://dx.doi.org/10.1142/s1793292010002098.

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Tetrapods, nanobelts and polyhedron-shape like zinc oxide (ZnO) , tin dioxide (SnO2) nanostructures and ZnO/ZnSnO3/Zn2SnO4 (ZTO) composite functional semiconducting nanostructures have been synthesized successfully by the vapor–solid growth process. XRD analyses showed that ZnO with wurtzite, SnO2 with rutile and zinc stannate (ZnSnO3) and/or dizinc stannate (Zn2SnO4) with polyhedral crystal structure were condensed from the vapor phase when Zn and/or Sn metal powders individually or mixed were used as the starting materials. The driving forces for growth of these nanostructures were found to be vapor density, temperature, pressure and place of deposition from the source materials. Typically, the ZnO nanobelts have lengths of several hundred of nanometers and widths of about 10–15 nm. The average particle size of SnO2 are in the range of about 10–20 nm. Uniform hexagonal-shaped crystals of ZnO/ZnSnO3/Zn2SnO4 composite in the range of 50–300 nm as estimated from TEM images are observed. Based on the TEM, optical absorption and emission studies and the CO gas sensing characteristics of the prepared materials showed good crystal quality implying that the ZnO , SnO2 and ZnO/ZnSnO3/Zn2SnO4 nanostructures may suggest possible applications in optoelectronic devices and chemical gas sensors.
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Dissertations / Theses on the topic "ZnSnO3"

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Oliveira, Nara Lúcia de. "Síntese e caracterização de SrSnO3 e ZnSnO3 obtidos pelo método de coprecipitação sem e com tratamento hidrotérmico assistido por micro-ondas." Universidade Federal de Goiás, 2018. http://repositorio.bc.ufg.br/tede/handle/tede/8283.

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The development of ceramic materials is important for the advancement of new technologies and the emergence of new economically viable materials. Modifying the synthesis method and relating its physical and chemical characteristics to possible industrial applications is part of the improvement process and offers alternatives to current production in improving the final product. In the present work, the synthesis and structural characterization of strontium and zinc stannates by the co-precipitation method, with and without microwave-assisted hydrothermal treatment, was carried out. The interest in the study with the application of the microwaves is in the sense of reducing the time and temperature of obtaining the main phase, perovskite. From the results of X-ray diffraction (XRD) it was possible to identify the formation of strontium and zinc stannates, monophasic after the addition of polyethylene glycol. The strontium stannate perovskite phase was obtained from the methodology with and without hydrothermal treatment assisted by microwave after calcination at 600 ºC for 2 hours. The zinc stannate with perovskite structure was obtained by the methodology with and without hydrothermal treatment assisted by microwaves without calcination. From the UV-VIS results optical values were obtained using Wood and Tauc theory. These values were all compatible with semiconductor materials, values between 2 and 4 eV. The images of the Electronic Transmission Electron Microscopy (ETM) characterization show the formation of nanotubes for the SrSnO3 samples and the cube morphology for the ZnSnO3 sample. The best performance was presented by the sample of ZnSnO3 calcined at 600 ºC, after hydrothermal treatment, presenting by XRD the formation of secondary phases, such as the spinel and rutile structure.
O desenvolvimento de materiais cerâmicos é importante para o avanço de novas tecnologias e o surgimento de novos materiais economicamente viáveis. Modificar o método de síntese e relacionar as suas características físicas e químicas com possíveis aplicações industriais, faz parte do processo de melhoramento e oferece alternativas à produção atual em melhorar o produto final. No presente trabalho realizou-se o estudo da síntese e a caracterização estrutural de estanatos de estrôncio e de zinco pelo método de coprecipitação, sem e com tratamento hidrotérmico assistido por micro-ondas. O interesse no estudo com a aplicação das micro-ondas é no sentido de reduzir o tempo e a temperatura de obtenção da fase principal, perovskita. Dos resultados de Difração de Raios X (DRX) foi possível identificar a formação de estanato de estrôncio e de zinco, monofásico após a adição de polietilenoglicol. O estanato de estrôncio a fase perovskita foi obtida da metodologia com e sem tratamento hidrotérmico assistido por micro-ondas após calcinação a 600 ºC por 2 horas. O estanato de zinco com estrutura perovskita foi obtido pela metodologia com e sem tratamento hidrotérmico assistido por micro-ondas sem calcinação. Dos resultados de UV-VIS foram obtidos valores de “gap” óptico utilizando teoria de Wood e Tauc. Estes valores foram todos compatíveis com materiais semicondutores, valores entre 2 e 4 eV. As imagens da caracterização por Microscopia Eletrônica de Transmissão (MET), mostram a formação de nano-tubos para as amostras de SrSnO3 e a morfologia de cubos para a amostra de ZnSnO3. O melhor desempenho foi apresentado pela amostra de ZnSnO3 calcinada a 600 ºC, após tratamento hidrotérmico, apresentando por DRX a formação fases secundárias, tais como a estrutura espinélio e rutilo.
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Alnjiman, Fahad. "ZnSnN2 thin films for photovoltaic applications." Thesis, Université de Lorraine, 2018. http://www.theses.fr/2018LORR0296/document.

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Des films de nitrure de zinc et d’étain (ZnSnN2) ont été élaborés par co-pulvérisation magnétron réactive à des températures proches de l’ambiante. La composition chimique des revêtements a été optimisée en ajustant les paramètres de dépôt comme la tension appliquée aux cibles métalliques, la pression de travail et la composition du gaz plasmagène. Dans les conditions optimisées, les films sont fortement cristallisés sur les différents types de substrats testés. Une étude approfondie sur la structure des films a été entreprise par microscopie électronique en transmission. Nous avons ainsi pu montrer que nos films de ZnSnN2 cristallisent dans le système hexagonal. Toutefois, cette structure diffère de celles présentées dans la littérature pour le nitrure de zinc et d’étain. Des études sur l’environnement chimique des éléments constitutifs des revêtements ont également été menées par spectrométrie Mössbauer et par photoémission X. Elles montrent que l’étain est présent dans nos films sous forme de Sn4+ en configuration tétraédrique. Nous avons également pu montrer que l’oxygène présent dans nos films est principalement localisé dans les zones inter-colonnaires. Enfin, les propriétés optiques et électriques de nos films ont été estimées en fonction de leur composition chimique. L’ensemble des résultats obtenus durant ce travail démontre la pertinence de ZnSnN2 pour des applications futures en tant que couche absorbante dans les cellules photovoltaïques
Zinc tin nitride (ZnSnN2) thin films have been deposited by reactive magnetron co-sputtering at room temperature. The stoichiometry of the films has been controlled by optimizing the deposition conditions such as the voltage applied to the metallic targets, the deposition pressure and the composition of the gas mixture. By using the optimized parameters, the deposited films are highly crystallized on the different used substrates. A special attention has been devoted to the determination of the film structure. Among the various structures reported in the literature, we have shown by transmission electron microscopy that the films crystallised in a hexagonal structure. Nevertheless, the structure of our films does not fit with that reported in the literature for the hexagonal ZnSnN2 material. In addition to this structural study, we have performed fine characterization using conversion electron Mossbauer spectrometry and X-ray photoemission spectroscopy. Both methods show that the optimized films contain Sn4+ ions in tetrahedral configuration. Nevertheless, oxygen contamination at the column boundaries has been evidenced. The electrical and optical properties of the films have been determined has a function of the film composition. The results obtained in this PhD work clearly evidence that ZnSnN2 is a suitable material for photovoltaic applications
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Kons, Corisa. "Synthesis, Characterization and Ferroelectric Properties of LN-Type ZnSnO3 Nanostructures." Scholar Commons, 2015. http://scholarcommons.usf.edu/etd/5976.

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With increasing focus on the ill health and environmental effects of lead there is a greater push to develop Pb-free devices and materials. To this extent, ecofriendly and earth abundant LiNbO3-type ZnSnO3, a derivative of the ABO3 perovskite structure, has a high theoretically predicted polarization making it an excellent choice as a suitable alternative to lead based material such as PZT. In this work we present a novel synthesis procedure for the growth of various ZnSnO3 nanostructures by combined physical/chemical processes. Various ZnSnO3 nanostructures of different dimensions were grown from a ZnO:Al template layer on a Si (100) substrate deposited by pulsed laser deposition followed by a strategic solvothermal process. The ferroelectric properties of each sample were explored and a remanent polarization as high as nearly 30 μC/cm2 was found in aligned nanowire arrayed films. An in-depth understanding of the structure-property relationship is key to the future development of this material and is the subject of future investigations.
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Bosson, Christopher John. "Understanding Cu₂ZnSnS₄ as a photovoltaic absorber for the future of solar electricity." Thesis, Durham University, 2018. http://etheses.dur.ac.uk/12586/.

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The world needs solar electricity to replace a large fraction of traditional, fossil-fuel-generated electricity over the coming decades if it is to avoid the worst effects of climate change and continue to meet the needs of an increasingly energy-dependent society. This transition is currently well underway. The installed generating capacity of solar electricity continues to grow exponentially, having reached 307 GW in 2016 (2 % of average global electricity demand), which means that replacing a large majority of fossil fuel use, requiring several terawatts of capacity, in the coming decades is entirely realistic. Cu2ZnSnS4 (CZTS) is a potential material for the absorber layer in photovoltaic solar cells. It has the advantages over silicon, which currently provides 95 % of the solar electricity market, of lower processing costs and a direct band gap, which means much less material is required. Most other alternative absorber materials will ultimately be limited by high material costs, low elemental abundances, or toxicity, but CZTS has none of these problems, making it a very promising material indeed. However, its record photovoltaic efficiency (11.0 %) is well below those of some other materials (>20 %) because of low open-circuit voltage. The outstanding areas of current CZTS research are the absorber-buffer interface, band gap fluctuations caused by point defects, and secondary phases. This thesis presents work investigating the latter two, primarily using bulk samples fabricated by solid-state reaction. Firstly, compositional, structural, and optoelectronic analysis techniques were used to study the effect of composition on material properties. It was found that the quasi-ternary phase diagram commonly used for CZTS is incorrect; and that no common analysis technique can quantify cation disorder in CZTS, despite Raman spectroscopy commonly being used to do so. Secondly, neutron diffraction was used to study the order-disorder phase transition at around 550 K. It was found that the transition temperature is dependent on elemental composition; and that Cu-Zn disorder is present on all cation lattice sites, not merely the 2c and 2d sites of the kesterite crystal structure as has previously been assumed. Thirdly, anomalous X-ray diffraction was used to study cation disorder further. It was found that two distinct phases of CZTS can be present in the same sample, with different elemental compositions resulting from the prevalence of different point defect complexes; two new such types of CZTS were identified; and a mechanism of phase formation was proposed. Finally, a fabrication route for thin-film CZTS by sputtering and sulphurisation annealing was established.
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Blanton, Eric Williams. "Characterization and Control of ZnGeN2 Cation Lattice Ordering and a Thermodynamic Model for ZnGeN2-ZnSnN2 Alloy Growth." Case Western Reserve University School of Graduate Studies / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=case1448295996.

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Nakatsuka, Shigeru. "Fabrication of bulk crystal and thin film of Ⅱ-Ⅳ-Ⅴ2 type compound semiconductor ZnSnP2 for photovoltaic application." 京都大学 (Kyoto University), 2017. http://hdl.handle.net/2433/225559.

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Gangam, Srikanth. "Optical Investigations of Cd Free Cu2ZnSnS4 Solar Cells." University of Toledo / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1345088305.

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Levalois, Marc. "Etude par diffraction de rayons X de la densité électronique dans les semi-conducteurs GaAs, ZnSiAs, ZnGeAs et ZnSnAs." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37607338k.

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Wang, Yejiao. "Fabrication of Cu2ZnSnSe4 Thin-film Solar Cells by a Two-stage Process." Scholar Commons, 2016. http://scholarcommons.usf.edu/etd/6154.

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Copper zinc tin selenide (Cu2ZnSnSe4 or CZTSe) is a quaternary compound semiconductor material that has attained more and more attention for thin film photovoltaic applications. CZTSe is only comprised of abundant and non-toxic elements. People have concerns about availability and cost of indium from CIGS and tellurium from CdTe, also about cadmium’s toxicity. These concerns have promoted CZTSe as an alternative thin film solar cell material. The major issues about CZTSe absorber fabrication are: tin loss during selenization process and existence of secondary phases. Recent improvements of CZTSe absorber have increased the efficiency of CZTSe thin film solar cell to 9.7% in laboratory, and this was accomplished by using H2Se as selenium source in a “two-stage” process. [1] However “one-stage” vacuum co-evaporation technique is still the most popular technique for CZTSe thin-film solar cells fabrication. In this research, Cu2ZnSnSe4 thin-film solar cells have been fabricated by using a two-step rapid thermal selenization process. The first step selenization is operated at 375℃, a relatively low annealing temperature, which helps avoiding the most common issue of tin loss. The second step selenization is carried out at a higher annealing temperature, 400℃ to 500℃, at where the formation of CZTSe quaternary compound can be completed, and fewer secondary phases remain in the CZTSe absorber bulk. A specially designed metallic precursor stacks deposition order has been developed to inhibit tin loss and zinc loss during selenization. Vacuum co-evaporation technique is not feasible to mass production, due to facility difficulty and bad uniformity. And H2Se is toxic and dangerous. We have developed these metallic precursor stacks vacuum deposition process and two-step selenium vapor selenization process. We believe this technique is more suitable for potential mass production in future. The properties of CZTSe thin-films and the performance of CZTSe thin-film solar cells have been characterized using techniques, including J-V, Raman spectroscopy, spectral response, and SEM/EDS. The best performance CZTSe thin-film solar cell that have been accomplished, has an open circuit voltage of 0.42 volt, shirt circuit current densities of 14.5 mA/cm2, fill factor of 47%, and efficiency of 2.86%.
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Fairbrother, Andrew. "Development of Cu(2)ZnSn(S,Se)(4) based solar cells." Doctoral thesis, Universitat de Barcelona, 2014. http://hdl.handle.net/10803/145615.

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Thin film solar cell technologies are rapidly developing, and chalcopyrite (Cu(In,Ga)Se2) based devices have demonstrated the highest power conversion efficiencies on the laboratory scale. However, in spite of this promise, there are concerns about the mid- to long-term viability of the material because it contains the relatively scarce elements of indium and gallium. This has led to the development of kesterite (Cu2ZnSn(S,Se)4) based photovoltaic technologies, which is particularly promising because of its similarities with the chalcopyrite material. In this material system indium and gallium are replaced by the more earth abundant elements of zinc and tin. Device efficiencies are still lower than Cu(In,Ga)Se2, but further research and development has led to significant increases in performance in the past few years. To date the device structure and processing parameters for kesterite based devices has been mostly copied from chalcopyrite based technologies. The objective of this thesis is to further develop these kesterite based technologies, and it covers some of the basic challenges related to it, including secondary phase formation and identification, and optimization of the front and back contact areas. Particular emphasis is placed on the deposition and thermal processing of this compound, and how these affect secondary phase formation and device properties. It is based on several articles which explore these in depth. This includes detailed characterization by Raman scattering spectroscopy, x-ray diffraction, scanning electron microscopy, and other techniques. Highlights of the thesis work include: development of a selective chemical etch to remove ZnS, a common secondary phase in this system, which leads to significant improvements in device performance; elaboration of a sulfo-selenization method to form Cu2ZnSn(S,Se)4 from metallic precursors; and understanding the influence of thermal processing parameters on phase formation and distribution
En los últimos años ha habido un rápido desarrollo en las tecnologías de celdas solares basadas en capa delgada, siendo hasta el momento los dispositivos basados en calcopiritas (Cu(In,Ga)Se2) los que han mostrado una mayor eficiencia de conversión fotovoltaica a escala de laboratorio. Sin embargo, y a pesar de tan prometedores resultados, existe una preocupación sobre la viabilidad a medio y largo término de estos materiales debido a la presencia en su composición de elementos relativamente escasos en la corteza terrestre, como son el In y el Ga. Esto ha llevado al desarrollo de tecnologías fotovoltaicas basadas en kesterita (Cu2ZnSn(S,Se)4), que es especialmente prometedora dada su gran similitud con la calcopirita. En este compuesto, el indio y el galio son reemplazados por elementos más abundantes como son el cinc y el estaño. Los valores de eficiencia de los dispositivos aún están por debajo de los del Cu(In,Ga)Se2, pero nuevas investigaciones y técnicas de desarrollo han llevado a importantes avances en los últimos años. A día de hoy, tanto los parámetros de fabricación como la estructura de los dispositivos basados en kesterita han seguido un camino prácticamente idéntico al de las tecnologías basadas en calcopiritas. El objetivo de esta tesis es el de profundizar en el desarrollo de las tecnologías basadas en kesterita, lo que cubre algunos de los retos básicos relacionados con ellas, como son la formación e identificación de fases secundarias o la optimización de las áreas de contacto frontal y posterior. Se ha puesto especial énfasis en la deposición y los procesos térmicos implicados en el crecimiento de este compuesto, y en ver cómo afectan a la posible formación de las fases secundarias y las propiedades del dispositivo. La tesis en sí está estructurada a partir de los diversos estudios publicados en revistas científicas. Dichos estudios incluyen una caracterización detallada por espectroscopia de dispersión Raman, difracción de rayos X, microscopia electrónica de barrido, y otras técnicas. Los puntos principales de este trabajo son: el desarrollo de un ataque químico selectivo para la eliminación del ZnS (una fase secundaria comúnmente presente en este sistema), con la consecuente mejora de las características del dispositivo; la elaboración de un método de sulfo-selenización para la formación de Cu2ZnSn(S,Se)4 a partir de precursores metálicos; y la resolución de cómo influyen los parámetros de los diferentes procesos térmicos en la formación y distribución de las fases.
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Books on the topic "ZnSnO3"

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The 2006-2011 World Outlook for Zinc Sulfate (100 Percent ZnSO4.H2O). Icon Group International, Inc., 2005.

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Book chapters on the topic "ZnSnO3"

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Prabakaran, P., M. Victor Antony Raj, Jobin Job Mathen, S. Prathap, and J. Madhavan. "Hollow ZnSnO3 Crystallites: Structural, Electrical and Optical Properties." In Springer Proceedings in Physics, 255–62. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-44890-9_24.

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Pathan, I. G., D. N. Suryawanshi, A. R. Bari, D. S. Rane, and L. A. Patil. "Preparation and Gas Sensing Properties of Nanostructured ZnSnO3 Thin Films." In Springer Proceedings in Physics, 143–57. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-34216-5_15.

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Holze, Rudolf. "Ionic conductance of ZnSO4." In Electrochemistry, 1776–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-49251-2_1591.

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Gutowski, J., K. Sebald, and T. Voss. "ZnSxO1-x: energy gaps, bowing parameter." In New Data and Updates for III-V, II-VI and I-VII Compounds, 443. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_327.

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Laidouci, A., A. Aissat, and J. P. Vilcot. "Simulation and Optimization of Cds/ZnSnN2 Structure for Solar Cell Applications with SCAPS-1D Software." In Lecture Notes in Electrical Engineering, 211–22. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6259-4_21.

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Wibowo, Rachmat Adhi, W. S. Kim, Badrul Munir, and Kyoo Ho Kim. "Growth and Properties of Stannite-Quaternary Cu2ZnSnSe4 Thin Films Prepared by Selenization of Sputtered Binary Compound Precursors." In Advanced Materials and Processing IV, 79–82. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-466-9.79.

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Priya, Alisha, Prashant Kumar, and Shiva Nand Singh. "Optimization of ZnSnO/CIGS Solar Cell with the Incorporation of Cu2O-EBL Layer." In A Collection of Contemporary Research Articles in Electronics, Communication and Computation, 355. Mantech Publications, 2021. http://dx.doi.org/10.47531/mantech/ecc.2021.54.

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Mockett, Robin I., William C. Orr, and Rajindar S. Sohal. "Overexpression of Cu,ZnSOD and MnSOD in transgenic Drosophila." In Methods in Enzymology, 213–20. Elsevier, 2002. http://dx.doi.org/10.1016/s0076-6879(02)49336-6.

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Carmela, Maria, Bonaccorsi Di Patti, Anna Giartosio, Giuseppe Rotilio, and Andrea Battistoni. "[5] Analysis of Cu,ZnSOD conformational stability by differential scanning calorimetry." In Methods in Enzymology, 49–61. Elsevier, 2002. http://dx.doi.org/10.1016/s0076-6879(02)49320-2.

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Emerit, Ingrid, Paulo Filipe, Joao Freitas, Alfonso Fernandes, Frédéric Garban, and Jany Vassy. "Assaying binding capacity of Cu,ZnSOD and MnSOD: Demonstration of their localization in cells and tissues." In Methods in Enzymology, 321–27. Elsevier, 2002. http://dx.doi.org/10.1016/s0076-6879(02)49347-0.

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Conference papers on the topic "ZnSnO3"

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Para, Touseef Ahmad, Hilal Ahmad Reshi, and Vilas Shelke. "Synthesis of ZnSnO3 nanostructure by sol gel method." In DAE SOLID STATE PHYSICS SYMPOSIUM 2015. Author(s), 2016. http://dx.doi.org/10.1063/1.4947656.

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Deepa, K., S. Lilly Angel, N. Rajamanickam, K. Jayakumar, and K. Ramachandran. "Structural and dielectric studies on Ag doped nano ZnSnO3." In DAE SOLID STATE PHYSICS SYMPOSIUM 2017. Author(s), 2018. http://dx.doi.org/10.1063/1.5028639.

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Pathan, Idris G., Dinesh N. Suryawanshi, Anil R. Bari, and Lalchand A. Patil. "Effect of iron doping on structural and microstructural properties of nanocrystalline ZnSnO3 thin films prepared by spray pyrolysis techniques." In 2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5032450.

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Bhattacharya, Anannya, Susomon Dutta, Sreeparna Paul, Subhrajit Sikdar, and Sanatan Chattopadhyay. "Growth of ZnSnO3 nano-crystalloids on Sisubstrate by employing chemical bath deposition (CBD) technique for self-powered UV-light sensing applications." In 2020 International Symposium on Devices, Circuits and Systems (ISDCS). IEEE, 2020. http://dx.doi.org/10.1109/isdcs49393.2020.9262987.

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Jayatunga, Benthara Hewage Dinushi, Md Rezaul Karim, Menglin Zhu, Jinwoo Hwang, Hongping Zhao, and Kathleen Kash. "MOCVD Growth and Characterization of ZnSnN2." In 62nd Electronic Materials Conference June 24-26, 2020 Virtual. US DOE, 2020. http://dx.doi.org/10.2172/1677510.

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Zhao, T. S., C. Zhao, C. Z. Zhao, W. Y. Xu, L. Yang, I. Z. Mitrovic, S. Hall, E. G. Lim, and S. C. Yu. "Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric." In 2019 International Conference on IC Design and Technology (ICICDT). IEEE, 2019. http://dx.doi.org/10.1109/icicdt.2019.8790915.

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Makin, Robert A., Krystal York, Nancy Senabulyay, James Mathisy, Roy Clarkey, Nathaniel Feldbergz, Patrice Miska, et al. "Order Parameter and Band Gap of ZnSnN2." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8548103.

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Maeda, T., S. Nakamura, and T. Wada. "First principles calculations of defect formation in In-free photovoltaic semiconductors Cu2ZnSnS4 and Cu2ZnSnSe4." In 2010 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2010. http://dx.doi.org/10.7567/ssdm.2010.k-5-2.

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Mopurisetty, Sundara Murthy, Mohit Bajaj, and Swaroop Ganguly. "Predictive TCAD of Cu2 ZnSnS4(CZTS) Solar Cells." In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2018. http://dx.doi.org/10.1109/sispad.2018.8551619.

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Huzenko, O. I., O. A. Dobrozhan, D. I. Kurbatov, and A. S. Opanasyuk. "Ag, ZnO, Cu2 ZnSnS4 Nanoinks for Printed Electronics." In 2018 International Conference on Information and Telecommunication Technologies and Radio Electronics (UkrMiCo). IEEE, 2018. http://dx.doi.org/10.1109/ukrmico43733.2018.9047591.

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