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Gotowe bibliografie tematyczne / Complementary Metal-Oxide-Semiconductor (CMOS) Technology

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Gotowa bibliografia na temat „Complementary Metal-Oxide-Semiconductor (CMOS) Technology”

Autor: Grafiati

Data publikacji: 3 czerwca 2025

Data aktualizacji: 31 lipca 2025

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Artykuły w czasopismach na temat "Complementary Metal-Oxide-Semiconductor (CMOS) Technology"

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Xu, Haoran, Jianghua Ding, and Jian Dang. "Design and Characteristics of CMOS Inverter based on Multisim and Cadence." Journal of Physics: Conference Series 2108, no. 1 (2021): 012034. http://dx.doi.org/10.1088/1742-6596/2108/1/012034.

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Abstract Known as complementary symmetrical metal oxide semiconductor (cos-mos), complementary metal oxide semiconductor is a metal oxide semiconductor field effect transistor (MOSFET) manufacturing process, which uses complementary and symmetrical pairs of p-type and n-type MOSFETs to realize logic functions. CMOS technology is used to build integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS) and other digital logic circuits. CMOS technology is also used in analog circuits, such as image sensors (CMOS sensors), data converters, RF cir

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Parameswaran, M., Lj Ristic, A. C. Dhaded, H. P. Baltes, W. Allegretto, and A. M. Robinson. "Fabrication of microbridges in standard complementary metal oxide semiconductor technology." Canadian Journal of Physics 67, no. 4 (1989): 184–89. http://dx.doi.org/10.1139/p89-032.

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Complementary metal oxide semiconductor (CMOS) technology is one of the leading fabrication technologies of the semiconductor integrated-circuit industry. We have discovered features inherent in the standard CMOS fabrication process that lend themselves to the manufacturing of micromechanical structures for sensor applications. In this paper we present an unconventional layout design methodology that allows us to exploit the standard CMOS process for producing microbridges. Two types of microbridges, bare polysilicon microbridges and sandwiched oxide microbridges, have been manufactured by fir

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Abbas, b. NOORI. "Exploring Terahertz COMPLEMENTARY METAL OXIDE SEMICONDUCTOR Integrated Circuits: Advancements and Obstacles." INTERNATIONAL JOURNAL OF MULTIDISCIPLINARY RESEARCH AND ANALYSIS 07, no. 03 (2024): 1238–43. https://doi.org/10.5281/zenodo.10851659.

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The text provides a description of the characteristics of several NMOS and CMOS circuit approaches, as well as an explanation of the limitations associated with each technology. Next, the CMOS domino circuit, a novel form of circuit, is explained. This entails interconnecting dynamic CMOS gates in a manner that enables the activation of all gates in the circuit simultaneously using a single clock edge. Consequently, there is no need for intricate clocking methods, allowing the dynamic gate to operate at its maximum speed. This circuit features a basic mode voltage-controlled oscillator operati

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Kempf, P., R. Hadaway, and J. Kolk. "Complementary metal oxide semiconductor compatible high-voltage transistors." Canadian Journal of Physics 65, no. 8 (1987): 1003–8. http://dx.doi.org/10.1139/p87-161.

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The purpose of this work was to study the implementation of high-voltage transistors using standard 3–5 μm complementary metal oxide semiconductor (CMOS) technology with a minimum of additional photolithographic or implant steps. A fabrication process was designed to accommodate a variety of high-voltage transistors with greater than 450 V breakdown voltage and low-voltage CMOS. Extensive use was made of a two-dimensional device model and a one-dimensional process model to determine suitable process parameters. The necessary conditions to produce a high-voltage double-diffused metal oxide semi

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Sardar, Rupam, Sudip Ghosh, and Bimal Datta. "Designing Half-Adder with CMOS Technology using Artificial Neural Network with Verilog Implementation." INTERANTIONAL JOURNAL OF SCIENTIFIC RESEARCH IN ENGINEERING AND MANAGEMENT 08, no. 03 (2024): 1–9. http://dx.doi.org/10.55041/ijsrem29025.

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In this study we want to design a Half-Adder with the help of Artificial Neural Network and design will be made by Complementary metal oxide semiconductor(CMOS).When we design any COMS circuit always we keep in mind that should be in minimum at cost .In this study we have used multi layer ANN to design the circuit. In our study neurons are treated like transistors and weights are used to adjust the value; like negative value as an inverter. Keywords: Half Adder, Complementary Metal Oxide Semiconductor, Artificial Neural Network, Verilog HDL

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Weng, Chun Jen. "Etching Process Effects of CMOS Transistor Gate Manufacturing Nanotechnology Fabrication Integration." Applied Mechanics and Materials 83 (July 2011): 91–96. http://dx.doi.org/10.4028/www.scientific.net/amm.83.91.

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As the nanotechnology gate is scaling down, the fabrication technology of gate spacer for CMOS transistor becomes more critical in manufacturing processes. For CMOS technologies, sidewall spacers play an important role in the control of short channel effects by offsetting ion implantation profiles from the edge of the gate. A sidewall spacer patterning technology yields critical dimension variations of minimum-sized features much smaller than that achieved by optical Complementary Metal–Oxide–Semiconductor (CMOS) fabrication processes integration. The present study is to overcome the fabricati

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Li, Yucheng, Shiqi Zhang, and Jianjun Song. "A Germanium Based Quantum Well Complementary Metal-Oxide-Semiconductor Transistor." Journal of Nanoelectronics and Optoelectronics 17, no. 9 (2022): 1245–55. http://dx.doi.org/10.1166/jno.2022.3308.

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Germanium is recognized as an important prospective material due to its great carrier mobility. The current design and research of GeSn channel field effect transistors are far from mature. Especially the complementary Ge-based CMOS device is rarely reported. It significantly limits the application and development of Ge-based MOS technology. Based on this, a Si0.2Ge0.66Sn0.14-Ge0.82Sn0.18-Ge double heterojunction quantum well NMOS and PMOS are proposed. Benefiting from the high carrier mobility of Ge and the increased mobility brought by the quantum well, the proposed NMOS and PMOS device achi

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Weng, Wu-Te, Yao-Jen Lee, Horng-Chih Lin, and Tiao-Yuan Huang. "Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology." International Journal of Plasma Science and Engineering 2009 (December 14, 2009): 1–10. http://dx.doi.org/10.1155/2009/308949.

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This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-

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Maity, N. P., Reshmi Maity, and Srimanta Baishya. "Design of a Low Noise Active Pixel Sensor using Complementary Metal-Oxide-Semiconductor Technology." Science & Technology Journal 4, no. 2 (2016): 130–36. http://dx.doi.org/10.22232/stj.2016.04.02.07.

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In this paper, our focus is on designing of complementary metal-oxide-semiconductor (CMOS) photodiode based active pixel sensor (APS) and performance analysis and achievements for CMOS image sensor. Different important design parameters like photocurrent, conversion gain, conversion factor, dynamic range, readout speed, and quantum efficiency have been calculated. Noise is also considered for the design at different phase of operations of CMOS APS. Various design parameters of our design are computed and compared with simulated results. Noise calculation shows that the pixel noise is dominated

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Awan, Waseem. "Digital Modulator using Digitally Programmable Complementary metal–oxide–semiconductor Differential Voltage Current Conveyor." Academic Journal of Research and Scientific Publishing 6, no. 65 (2024): 21–40. http://dx.doi.org/10.52132/ajrsp.e.2024.65.2.

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This study aims to Developing a digital modulation system using a new technology and idea, which is the digitally programmable CMOS (Complementary metal–oxide–semiconductor), Integrate the CMOS DVCC circuit as a modulator in the communication systems, as will be explained in chapter 3, Finally, simulate this new idea in communication by using a simulation program, which is PSpice software, and analyzing the results. By focusing on How to use digital programmable CMOS (Complementary Metal–Oxide–Semiconductor) in a communication system as a digital modulator, Verifying the effectiveness of the s

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Rozprawy doktorskie na temat "Complementary Metal-Oxide-Semiconductor (CMOS) Technology"

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Al-Ahmadi, Ahmad Aziz. "COMPLEMENTARY ORTHOGONAL STACKED METAL OXIDE SEMICONDUCTOR: A NOVEL NANOSCALE COMPLEMENTRAY METAL OXIDE SEMICONDUCTOR ARCHTECTURE." Ohio University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1147134449.

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Csutak, Sebastian Marius. "Optical receivers and photodetectors in 130nm CMOS technology." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3036588.

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Zahorian, Jaime S. "Fabrication technology and design for CMUTS on CMOS for IVUS catheters." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/51730.

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The objective of this research is to develop novel capacitive micromachined ultrasonic transducer (CMUT) arrays for intravascular ultrasonic (IVUS) imaging along with the fabrication processes to allow for monolithic integration of CMUTs with custom CMOS electronics for improved performance. The IVUS imaging arrays include dual-ring arrays for forward-looking volumetric imaging in coronary arteries and annular-ring arrays with dynamic focusing capabilities for side-looking cross sectional imaging applications. Both are capable of integration into an IVUS catheter 1-2 mm in diameter. The resear

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Ramirez, Ortiz Rolando Carleton University Dissertation Engineering Electrical. "Technology mapping algorithms for CMOS dynamic logic circuits." Ottawa, 1992.

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Walker, Richard John. "Fully digital, phase-domain ΔΣ 3D range image sensor in 130nm CMOS imaging technology". Thesis, University of Edinburgh, 2012. http://hdl.handle.net/1842/6214.

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Three-Dimensional (3D) optical range-imaging is a field experiencing rapid growth, expanding into a wide variety of machine vision applications, most recently including consumer gaming. Time of Flight (ToF) cameras, akin to RADAR with light, sense distance by measuring the round trip time of modulated Infra-Red (IR) illumination light projected into the scene and reflected back to the camera. Such systems generate 'depth maps' without requiring the complex processing utilised by other 3D imaging techniques such as stereo vision and structured light. Existing range-imaging solutions within the

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Lee, Myunghee. "A quasi-monolithic optical receiver using a standard digital CMOS technology." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/14720.

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Balachandran, Ganesh Kumar. "A switched-current filter in digital-CMOS technology with low charge-injection errors." Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/15405.

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Moen, Kurt Andrew. "Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44700.

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The advent of high-frequency silicon-based technologies has enabled the design of mixed-signal circuits that incorporate analog, RF, and digital circuit components to build cost-effective system-on-a-chip solutions. Emerging applications provide great incentive for continued scaling of transistor performance, requiring careful attention to mismatch, noise, and reliability concerns. If these mixed-signal technologies are to be employed within space-based electronic systems, they must also demonstrate reliability in radiation-rich environments. SiGe BiCMOS technology in particular is positioned

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Ho, Ka Wai. "A 1-V CMOS power amplifier for Bluetooth applications /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202002%20HO.

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Xiao, Haiqiao. "Design of Radio-Frequency Filters and Oscillators in Deep-Submicron CMOS Technology." PDXScholar, 2008. https://pdxscholar.library.pdx.edu/open_access_etds/5233.

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Radio-frequency filters and oscillators are widely used in wireless communication and high-speed digital systems, and they are mostly built on passive integrated inductors, which occupy a relative large silicon area. This research attempted to implement filters and oscillators operating at 1-5 GHz using transistors only, to reduce the circuits’ area. The filters and oscillators are designed using active inductors, based on the gyrator principle; they are fabricated in standard digital CMOS technology to be compatible with logic circuits and further lower the cost. To obtain the highest operati

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Książki na temat "Complementary Metal-Oxide-Semiconductor (CMOS) Technology"

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Kwon, Min-jun. CMOS technology. Nova Science Publishers, 2010.

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Shoji, Masakazu. CMOS digital circuit technology. Prentice Hall, 1988.

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Shoji, Masakazu. CMOS digital circuit technology. Prentice-Hall International, 1988.

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M, Pimbley J., ed. Advanced CMOS process technology. Academic Press, 1989.

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Minoru, Fujishima, ed. Design and modeling of millimeter-wave CMOS circuits for wireless transceivers: Era of sub-100nm technology. Springer Science+Business Media, 2008.

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Hierlemann, A. Integrated chemical microsensor systems in CMOS technology. Springer, 2005.

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Troutman, Ronald R. Latchup in CMOS Technology: The Problem and Its Cure. Springer US, 1986.

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Hierlemann, Andreas. Integrated chemical microsensor systems in CMOS technology. Springer, 2005.

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Madrid, Philip E. Device design and process window analysis of a deep submicron CMOS VLSI technology. Addison-Wesley, 1992.

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Pfister, Andrea. Metastability in digital circuits with emphasis on CMOS technology amplifier. Hartung-Gorre, 1989.

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Części książek na temat "Complementary Metal-Oxide-Semiconductor (CMOS) Technology"

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Peroulis, Dimitrios, Prashant R. Waghmare, Sushanta K. Mitra, et al. "CMOS (Complementary Metal-Oxide-Semiconductor)." In Encyclopedia of Nanotechnology. Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100141.

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Winter, Marc, and Michael Deveaux. "Complementary Metal-Oxide Semiconductor (CMOS) Pixel Sensors." In Handbook of Particle Detection and Imaging. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-319-47999-6_55-1.

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Winter, Marc, and Michael Deveaux. "Complementary Metal-Oxide-Semiconductor (CMOS) Pixel Sensors." In Handbook of Particle Detection and Imaging. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-319-93785-4_55.

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Mishra, Raghvendra Kumar, Susmi Anna Thomas, Deepa Sethi singh, et al. "Heterogeneous Integration of 2D Materials with Silicon Complementary Metal Oxide Semiconductor (Si-CMOS) Devices." In Springer Tracts in Electrical and Electronics Engineering. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-4623-1_6.

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Mohd Najib, Suhaila, Mariani Idroas, and Muhammad Nasir Ibrahim. "Driving Circuitry of Complementary Metal Oxide Semiconductor (CMOS) Area Image Sensor for Optical Tomography Instrumentation System." In Lecture Notes in Electrical Engineering. Springer Singapore, 2014. http://dx.doi.org/10.1007/978-981-4585-42-2_24.

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Hong, M., J. Kwo, T. D. Lin, M. L. Huang, W. C. Lee, and P. Chang. "InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High-k Dielectrics for Science and Technology Beyond Si CMOS." In Fundamentals of III-V Semiconductor MOSFETs. Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1547-4_9.

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"Modern Complementary Metal-Oxide–Semiconductor (CMOS) Technology." In Integrated Circuit Fabrication. Cambridge University Press, 2023. http://dx.doi.org/10.1017/9781009303606.003.

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Zhang, S. L., and Z. Zhang. "Metal silicides in advanced complementary metal-oxide-semiconductor (CMOS) technology." In Metallic Films for Electronic, Optical and Magnetic Applications. Elsevier, 2014. http://dx.doi.org/10.1533/9780857096296.1.244.

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Roy, Sunipa, Chandan Kumar Ghosh, Sayan Dey, and Abhijit Kumar Pal. "Metal Oxide Field Effect Transistor (MOSFET)." In Solid State & Microelectronics Technology. BENTHAM SCIENCE PUBLISHERS, 2023. http://dx.doi.org/10.2174/9789815079876123010006.

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More or less than 17 years since D. Kahng and M. M. Atalla first conveyed the demonstration of a Si-SiO2 MOS transistor (MOSFET). In our regular lives, the impression of these MOS-based IC’s was imparted -just beginning to be felt. This incredible explosion has been caused by many inventions and countless numbers of perhaps small but crucial contributions by many researchers. Historical signs of progress of the metal-oxide-semiconductor field-effect transistor (MOSFET) during the last 60 years are appraised, from the 1928 patent disclosures of the field-effect conductivity modulation concept a

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Kumar, Sunil, and Balwinder Raj. "Simulations and Modeling of TFET for Low Power Design." In Advances in Systems Analysis, Software Engineering, and High Performance Computing. IGI Global, 2016. http://dx.doi.org/10.4018/978-1-4666-8823-0.ch021.

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In Complementary Metal-Oxide-Semiconductor (CMOS) technology, scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past four decades. However, as the technology advancement on nanometer scale regime for the purpose of building ultra-high density integrated electronic computers and extending performance, CMOS devices are facing fundamental problems such as increased leakage currents, large process parameter variations, short channel effects, increase in manufacturing cost, etc. The new technology must be energy efficient, dense, and enable more de

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Streszczenia konferencji na temat "Complementary Metal-Oxide-Semiconductor (CMOS) Technology"

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Bin Mohd Noh, Mohd Fauzi. "Improvement of Laser Groove Bottom Width in Complementary Metal-Oxide-Semiconductor (CMOS) Low-k Wafer Technology." In 2024 IEEE 40th International Electronics Manufacturing Technology (IEMT). IEEE, 2024. https://doi.org/10.1109/iemt61324.2024.10875219.

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Wang, Yizhe, Zhongjie Guo, and Youmei Guo. "Pixel Sharing Based Design of High Signal-to-Noise Ratio Mixed Domain Time Delay Integration Complementary Metal Oxide Semiconductor Image Sensor." In 2024 3rd International Symposium on Semiconductor and Electronic Technology (ISSET). IEEE, 2024. https://doi.org/10.1109/isset62871.2024.10779799.

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Choi, Woo Young. "Monolithic 3D (M3D) Complementary Metal-Oxide-Semiconductor (CMOS)-Nanoelectromechanical (NEM) Hybrid Circuits." In 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2018. http://dx.doi.org/10.1109/edtm.2018.8421505.

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Patil, Chandraman, Hamed Dalir, Hao Wang, and Volker J. Sorger. "Energy Efficient Coupling-based ITO based Integrated Photonics Modulator." In CLEO: Applications and Technology. Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.jth3a.55.

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Here, a high-speed optical modulator with large bandwidth, robust athermal operation, complementary metal-oxide-semiconductor (CMOS) compatibility, and using the magical critical coupling loss, is presented for photonics integrated systems and computing applications.

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Jared, David A., Timothy M. Slagle, Kristina M. Johnson, and Kelvin Wagner. "Optically addressed CMOS VLSI liquid-crystal spatial light modulators." In OSA Annual Meeting. Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.fv2.

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A new class of optically addressed spatial light modulators (SLMs) based on complementary metal-oxide semiconductor (CMOS) very-large-scale integration (VLSI) CMOS VLSI and liquid-crystal technology is discussed. The SLMs consist of a liquid-crystal modulator on a CMOS VLSI backplane containing photodetectors and analog electronics. In this manner, by combining the flexibility of semiconductor electronics and the parallelism of liquid-crystal modulator, SLMs can be designed to perform a wider variety of computational functions. New optoelectronic computing architectures are possible by providi

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Verma, Archana, Vimalendra Singh, Ashwini Kumar Upadhyay, Anurag Upadhyay, and Sofyan A. Taya. "The Power Dissipation of Complementary Metal Oxide Semiconductor (CMOS) Inverter and Propagation Delay for Various Technologies." In 2023 International Conference on Sustainable Emerging Innovations in Engineering and Technology (ICSEIET). IEEE, 2023. http://dx.doi.org/10.1109/icseiet58677.2023.10303532.

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Yee, Wai Mun, Mario Paniccia, Travis Eiles, and Valluri Rao. "Laser Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors." In ISTFA 2000. ASM International, 2000. http://dx.doi.org/10.31399/asm.cp.istfa2000p0003.

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Abstract A novel optical probing technique to measure voltage waveforms from flip-chip packaged complementary metal-oxide-semiconductor (CMOS) integrated circuits (IC) is described. This infrared (IR) laser based technique allows signal waveform acquisition and high frequency timing measurement directly from active PN junctions through the silicon backside substrate on IC’s mounted in flip-chip, stand-alone, or multi-chip module packages as well as wire-bond packages on which the chip backside is accessible. The technique significantly improves silicon debug & failure analysis (FA) through

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Yining, Liu, Wang Renze, Yang Yapeng, et al. "The Choice of MOSFET Manufacturing Technique Used in Emergency Response Robot." In 2020 International Conference on Nuclear Engineering collocated with the ASME 2020 Power Conference. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/icone2020-16222.

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Abstract For the aim of helping the development of robots used in Radiological Emergency Planning and Preparedness, the Total Ionizing Dose (TID) effects on the threshold voltage shift (ΔVth) of different kinds of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) with different geometry and different scaling technology was compared. The different gate width and length dependent between bulk Complementary Metal-Oxide-Semiconductor Transistor (CMOS) process and nanowire (NW) MOSFET as well as higher and lower technology node is noticed. The reason of this difference is explained from th

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Pichumani, Pradip Sairam, and Fauzia Khatkhatay. "Introduction of a Novel Sample Preparation Technique for the Failure Analysis of Silicon Integrated Photonics Modules." In ISTFA 2019. ASM International, 2019. http://dx.doi.org/10.31399/asm.cp.istfa2019p0508.

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Abstract Silicon photonics is a disruptive technology that aims for monolithic integration of photonic devices onto the complementary metal-oxide-semiconductor (CMOS) technology platform to enable low-cost high-volume manufacturing. Since the technology is still in the research and development phase, failure analysis plays an important role in determining the root cause of failures seen in test vehicle silicon photonics modules. The fragile nature of the test vehicle modules warrants the development of new sample preparation methods to facilitate subsequent non-destructive and destructive anal

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Pavlishin, Kirill, Karine Abgaryan, and Andrey Zhuravlev. "APPLICATION OF MACHINE-TRAINED POTENTIALS TO RESEARCH INTO STRUCTURAL PROPERTIES OF OXIDE SYSTEMS." In Mathematical modeling in materials science of electronic component. LCC MAKS Press, 2023. http://dx.doi.org/10.29003/m3594.mmmsec-2023/88-92.

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. In this paper, the structural properties of hafnium oxide (HfO2) in its orthorhombic, monoclinic and tetragonal phases are investigated using machine learning potentials (MLP) in combination with the nudged elastic band (NEB) method. HfO2 is a promising material for electronic devices, in particular memristors, due to its high dielectric constant and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. The paper compares three different MLPs (NNP, SNAP, qSNAP) and selects qSNAP as the most effective model for predicting energies and forces. Using NEB in conjunction w

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Raporty organizacyjne na temat "Complementary Metal-Oxide-Semiconductor (CMOS) Technology"

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Xu, Yang. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS). Defense Technical Information Center, 2014. http://dx.doi.org/10.21236/ada596171.

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