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Rozprawy doktorskie na temat „Metal oxide semiconductor field-effect transistors”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 28 lipca 2024

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1

Vega, Reinaldo A. "Schottky field effect transistors and Schottky CMOS circuitry /." Online version of thesis, 2006. http://hdl.handle.net/1850/5179.

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Shi, Xuejie. "Compact modeling of double-gate metal-oxide-semiconductor field-effect transistor /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202006%20SHI.

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Zhang, Zhikuan. "Source/drain engineering for extremely scaled MOSFETs /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20ZHANG.

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4

Fleischer, Stephen. "A study of gate-oxide leakage in MOS devices." Thesis, [Hong Kong : University of Hong Kong], 1993. http://sunzi.lib.hku.hk/hkuto/record.jsp?B1364600X.

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Höhr, Timm. "Quantum-mechanical modeling of transport parameters for MOS devices /." Konstanz : Hartnung-Gorre, 2006. http://www.loc.gov/catdir/toc/fy0707/2007358987.html.

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Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 16228.<br>Summary in German and English, text in English. Includes bibliographical references (p. 123-132).

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6

Turner, Gary Chandler. "Zinc Oxide MESFET Transistors." Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/3439.

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Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a semiconductor material. As such, it is possible to use zinc oxide (ZnO) to make semiconductor devices such as diodes and transistors. Being transparent to visible light in its crystalline form means that it has the potential to be the starting material for so-called 'transparent electronics', where the entire device is transparent. Transparent transistors have the potential to improve the performance of the electronics currently used in LCD display screens. Most common semico

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7

Randell, Heather Eve. "Applications of stress from boron doping and other challenges in silicon technology." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.

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8

Wu, Xu Sheng. "Three dimensional multi-gates devices and circuits fabrication, characterization, and modeling /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20WUX.

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9

Modzelewski, Kenneth Paul. "DC parameter extraction technique for independent double gate MOSFETs a thesis presented to the faculty of the Graduate School, Tennessee Technological University /." Click to access online, 2009. http://proquest.umi.com/pqdweb?index=11&did=1759989211&SrchMode=1&sid=1&Fmt=6&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1250600320&clientId=28564.

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10

Trivedi, Vishal P. "Physics and design of nonclassical nanoscale CMOS devices with ultra-thin bodies." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009860.

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11

Wu, Kehuey. "Strain effects on the valence band of silicon piezoresistance in p-type silicon and mobility enhancement in strained silicon pMOSFET /." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0008390.

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12

Chen, Qiang. "Scaling limits and opportunities of double-gate MOSFETS." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/15011.

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13

Klüpfel, Fabian J., Wenckstern Holger von, and Marius Grundmann. "Low frequency noise of ZnO based metal-semiconductor field-effect transistors." American Institute of Physics, 2015. https://ul.qucosa.de/id/qucosa%3A31224.

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The low frequency noise of metal-semiconductor field-effect transistors (MESFETs) based on ZnO:Mg thin films grown by pulsed laser deposition on a-plane sapphire was investigated. In order to distinguish between noise generation in the bulk channel material, at the semiconductor surface, and at the gate/channel interface, ohmic ZnO channels without gate were investigated in detail, especially concerning the dependency of the noise on geometrical variations. The experiments suggest that the dominating 1/f noise in the frequency range below 1 kHz is generated within the bulk channel material, bo

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14

Shen, Jian. "Double gate MOSFETs : process variations and design considerations /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20SHEN.

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15

Krishnamohan, Tejas. "Physics and technology of high mobility, strained germanium channel, heterostructure MOSFETs." access full-text online access from Digital Dissertation Consortium, 2006. http://libweb.cityu.edu.hk/cgi-bin/er/db/ddcdiss.pl?3219310.

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16

Tamjidi, Mohammad R. "Characteristics of N-channel accumulation mode thin film polysilicon mosfets. /." Full text open access at:, 1987. http://content.ohsu.edu/u?/etd,132.

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17

Lin, Xinnan. "Double gate MOSFET technology and applications /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20LIN.

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18

Chen, Xiangdong. "Bandgap engineering in vertical MOSFETs." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3025006.

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19

Jeedigunta, Manjeera. "Analytical and compact modeling of highly asymmetrical independent double-gated transistors a dissertation presented to the faculty of the Graduate School, Tennessee Technological University /." Click to access online, 2009. http://proquest.umi.com/pqdweb?index=0&did=1908035741&SrchMode=1&sid=2&Fmt=6&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1265058157&clientId=28564.

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20

Lau, Mei Po Mabel. "Characterization of hot-carrier induced degradation via small-signal characteristics in mosfets /." St. Lucia, Qld, 2001. http://www.library.uq.edu.au/pdfserve.php?image=thesisabs/absthe16462.pdf.

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21

Yoon, Kwang Sub. "A precision analog small-signal model for submicron MOSFET devices." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/14935.

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22

Shelley, Valerie Anderson 1957. "Validity of the Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276801.

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The Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS is investigated. The effects considered are Drain Induced Barrier Lowering, DIBL, and the maximum electric field, Emax, which influences Drain Induced High Field, DIHF. A scaled short channel design is used as the basis for the investigation. Cases are numerically simulated using the MINIMOS program. DIBL and Emax are calculated using the Jain and Balk model. Model values are compared to numerical simulation values. Results show the model consistently overestimates DIBL. Also, the range for which the model cl

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23

Tse, Koon-Yiu. "High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611979.

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24

Olsen, Sarah H. "Strained silicon/silicon germanium heterojunction n-chanel metal oxide semiconductor field effect transistors." Thesis, University of Newcastle Upon Tyne, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.246619.

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25

Diawuo, Kwasi. "Buried channel delta-doped metal-oxide semiconductor field effect transistors (#delta#-doped MOSFETs)." Thesis, University of Newcastle Upon Tyne, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361543.

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26

Ng, Chun Wai. "On the inversion and accumulation layer mobilities in N-channel trench DMOSFETS /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20NG.

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27

Wu, Wen. "Modeling the extrinsic resistance and capacitance of planar and non-planar MOSFETs /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20WUW.

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28

Smith, Casey Eben Reidy Richard F. "Advanced technology for source drain resistance reduction in nanoscale FinFETs." [Denton, Tex.] : University of North Texas, 2008. http://digital.library.unt.edu/permalink/meta-dc-6052.

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29

Ouyang, Qiqing Christine. "Physical model enhancement and exploration of bandgap engineering in novel sub-100nm pMOSFETs /." Digital version:, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p9992880.

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30

Haasmann, Daniel Erwin. "Active Defects in 4H–SiC MOS Devices." Thesis, Griffith University, 2015. http://hdl.handle.net/10072/367037.

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The research findings presented in this thesis have provided several key contributions towards a better understanding of the SiC–SiO2 interface in SiC MOS structures. The electrically active defects directly responsible for degrading the channel-carrier mobility in 4H–SiC MOSFETs have been identified and a novel technique to detect these defects in 4H–SiC MOS capacitors has been proposed and experimentally demonstrated. With a better understanding of defects at the SiC–SiO2 interface two alternative gate oxide growth processes have been proposed to overcome the practical limitations associated

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31

Duffy, Christopher James. "Modeling hot-electron injection and impact ionization in pFET's." Thesis, Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/14796.

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32

Wang, Haihong. "Advanced transport models development for deep submicron low power CMOS device design /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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33

Palmer, Martin John. "Investigation of high mobility pseudomorphic SiGe p channels in Si MOSFETS at low and high electric fields." Thesis, University of Warwick, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.246761.

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34

Baird, John Malcolm Edward. "A micro processor based A.C. drive with a Mosfet inverter." Thesis, Cape Technikon, 1991. http://hdl.handle.net/20.500.11838/1119.

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Thesis (Masters Diploma (Electrical Engineering)--Cape Technikon, Cape Town,1991<br>A detailed study into the development of a three phase motor drive, inverter and microprocessor controller using a scalar control method. No mathematical modelling of the system was done as the drive was built around available technology. The inverter circuit is of a Vo~tage source inverter configuration whicp uses MOSFETs switching at a base frequency of between 1.2 KHz and 2 KHz. Provision has been made for speed control and dynamic braking for special applications, since the drive is not going to be

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35

Singh, Jagar. "Technology, characteristics, and modeling of large-grain polysilicon MOSFET /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202002%20SINGH.

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36

Kulkarni, Anish S. "Study of Tunable Analog Circuits Using Double Gate Metal Oxide Semiconductor Field Effect Transistors." Ohio University / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1234552603.

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37

Khan, Shamsul Arefin. "Deep sub-micron MOS transistor design and manufacturing sensitivity analysis /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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38

李華剛 and Eddie Herbert Li. "Narrow-channel effect in MOSFET." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1990. http://hub.hku.hk/bib/B31209312.

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39

Liu, Kou-chen. "Si1-xGex/Si vertical MOSFETs and sidewall strained Si devices : design and fabrication /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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40

Pratapgarhwala, Mustansir M. "Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7536.

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Transistor mismatch is a crucial design issue in high precision analog circuits, and is investigated here for the first time in SiGe HBTs. The goal of this work is to study the effects of mismatch under extreme conditions including radiation, high temperature, and low temperature. One portion of this work reports collector current mismatch data as a function of emitter geometry both before and after 63 MeV proton exposure for first-generation SiGe HBTs with a peak cut-off frequency of 60 GHz. However, minimal changes in device-to-device mismatch after radiation exposure were experienced. An

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41

Huang, Chender 1960. "Characterization of interface trap density in power MOSFETs using noise measurements." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276872.

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Low-frequency noise has been measured on commercial power MOSFETs. These devices, fabricated with the VDMOS structure, exhibit a 1/f type noise spectrum. The interface state density obtained from noise measurements was compared with that obtained from the subthreshold-slope method. Reasonable agreement was found between the two measurements. The radiation effects on the noise power spectral density were also investigated. The results indicated that the noise can be attributed to the generation of interface traps near the Si-SiO₂ interface. The level of interface traps generated by radiation wa

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42

Waseem, Akbar. "Effect of gate length in enhancing current in a silicon nanowire wrap around gate MOSFET." Diss., Columbia, Mo. : University of Missouri-Columbia, 2006. http://hdl.handle.net/10355/5878.

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Thesis (M.S.)--University of Missouri-Columbia, 2006.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on September 14, 2007) Vita. Includes bibliographical references.

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43

Kottantharayil, Anil. "Low voltage hot carrier issues in deep sub-micron metal oxide semiconductor field effect transistors." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=963719645.

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44

Peters, Chris (Christopher Joseph) Carleton University Dissertation Engineering Electrical. "MOSFET based gamma radiation detector." Ottawa, 1992.

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45

Budihardjo, Irwan Kukuh. "A charge based power MOSFET model /." Thesis, Connect to this title online; UW restricted, 1995. http://hdl.handle.net/1773/5975.

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46

Man, Tsz Yin. "One dimensional quantum mechanical transport in double-gate MOSFET /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20MAN.

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47

Martinez, Marino Juan 1965. "The analysis of current-mirror MOSFETs for use in radiation environments." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276910.

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Experiments were conducted on current-mirror MOSFETs to examine their suitability for use in radiation environments. These devices, which allow low loss load current sensing (defined by a current-ratio n'), are an important element of many power integrated circuits (PICs). Total-dose testing demonstrated that the current ratio was virtually unaffected for many operating conditions. In all cases, changes were largest when sense resistance was largest and minimal when sense voltage was approximately equal to the load source's voltage. In addition, testing verified the feasibility of using sense-

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48

Liu, Hsi-Wen, and 劉錫紋. "Electrical Analysis and Reliability in Advanced Metal Oxide Semiconductor Capacitance and Metal Oxide Semiconductor Field Effect Transistors / Fin Field Effect Transistors." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/r9ts9h.

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博士<br>國立中山大學<br>物理學系研究所<br>107<br>Metal-oxide-semiconductor-field-effect transistors (MOSFETs) have the advantages of low manufacturing cost, low power consumption and easy scaling down. They are widely used in the IC industry, and the MOSFETs continue to shrink with the Moore''s Law. When the gate oxide layer is shrunk to a thickness of only 1 nm, the quantum tunneling effect becomes very serious at this scale, resulting in extremely large gate leakage and reliability problems. To continue the scaling down, gate leakage current is the primary problem that must be solved. Therefore,

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49

Jiang, Huan, and 江瓛. "Breakdown Voltage of Metal-Oxide-Semiconductor Field-Effect Transistors." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/75543026803172223906.

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碩士<br>國立暨南國際大學<br>電機工程學系<br>103<br>Unlike conventional MOSFETs, power MOSFETs requires high breakdown voltages to operate in integrated circuits. Using two-dimensional TCAD simulations, this thesis explores the breakdown voltage and associated mechanism of power MOSFET devices. Ideally one-dimensional PN junctions are first simulated to realize the effects of doping concentration and junction length on breakdown voltage, and subsequently, lightly doped drain MOSFETs are investigated to study the distribution of electrical field and voltage drop across the lightly doped drain region. Finally, t

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50

Pagey, Manish Prabhakar. "Hot-carrier reliability simulation in aggresively scaled MOS transistors." 2003. http://etd.library.vanderbilt.edu/ETD-db/available/etd-12032003-100902/.

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