Gotowe bibliografie tematyczne / Photodiodes Gap

Spis treści

  1. Artykuły w czasopismach
  2. Rozprawy doktorskie
  3. Książki
  4. Części książek
  5. Streszczenia konferencji
  6. Raporty organizacyjne

Gotowa bibliografia na temat „Photodiodes Gap”

Autor: Grafiati
Data publikacji: 3 czerwca 2025
Data aktualizacji: 31 lipca 2025

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Artykuły w czasopismach na temat "Photodiodes Gap"

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Sun, Yanning, Aristo Yulius, Guohua Li, and Jerry M. Woodall. "Drift dominated InP/GaP photodiodes." Solid-State Electronics 48, no. 10-11 (2004): 1975–79. http://dx.doi.org/10.1016/j.sse.2004.05.043.

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Gumenjuk-Sichevskaya, J. V., and F. F. Sizov. "Currents in narrow-gap photodiodes." Semiconductor Science and Technology 14, no. 12 (1999): 1124–31. http://dx.doi.org/10.1088/0268-1242/14/12/320.

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McIntosh, Dion, Qiugui Zhou, Yaojia Chen, and Joe C. Campbell. "High quantum efficiency GaP avalanche photodiodes." Optics Express 19, no. 20 (2011): 19607. http://dx.doi.org/10.1364/oe.19.019607.

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Carras, M., J. L. Reverchon, G. Marre, et al. "Interface band gap engineering in InAsSb photodiodes." Applied Physics Letters 87, no. 10 (2005): 102103. http://dx.doi.org/10.1063/1.2041818.

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Pikhtin, A. N., S. A. Tarasov, and B. Kloth. "Ag-GaP schottky photodiodes for UV sensors." IEEE Transactions on Electron Devices 50, no. 1 (2003): 215–17. http://dx.doi.org/10.1109/ted.2002.807247.

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Averin, S. V., P. I. Kuznetsov, V. A. Zhitov, et al. "Metal-semiconductor-metal photodiodes based on ZnCdS/GaP wide-gap heterostructures." Technical Physics 57, no. 11 (2012): 1514–18. http://dx.doi.org/10.1134/s1063784212110047.

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Vygranenko, Yu, A. Malik, M. Fernandes, R. Schwarz, and M. Vieira. "UV-Visible ITO/GaP Photodiodes: Characterization and Modeling." physica status solidi (a) 185, no. 1 (2001): 137–44. http://dx.doi.org/10.1002/1521-396x(200105)185:1<137::aid-pssa137>3.0.co;2-r.

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Dmytro, Faizullin, Hiraki Koju, team HORYU-IV, and Cho Mengu. "IMPROVEMENT OF SUN ANGLE ACCURACY FROM IN-ORBIT DATA OF A QUADRANT PHOTODIODE SUN SENSOR." INTERNATIONAL JOURNAL OF RESEARCH- GRANTHAALAYAH 5, no. 5 (2017): 54–67. https://doi.org/10.5281/zenodo.583886.

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The sun vector is commonly used for defining a satellite attitude and many types of sensors exist for its determination. A fine pinhole sun sensor type was chosen and designed for HORYU-IV nanosatellite of Kyushu Institute of Technology. This sensor has a round-shaped hole and uses commercial off-the-shelf silicon photodiode, which consists of four small sensitive elements arranged close to each other. This type of sensors commonly uses look-up tables for providing high accuracy, which requires a large amount of data to be saved. Polynomial methods for sun vector determination were considered
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Chianese, Giovanni, Pasquale Franciosa, Tianzhu Sun, Dariusz Ceglarek, and Stanislao Patalano. "Using photodiodes and supervised machine learning for automatic classification of weld defects in laser welding of thin foils copper-to-steel battery tabs." Journal of Laser Applications 34, no. 4 (2022): 042040. http://dx.doi.org/10.2351/7.0000800.

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This paper has been designed to study whether photodiodes and supervised machine learning (ML) algorithms are sufficient to automatically classify weld defects caused by simultaneous variation of the part-to-part gap and laser power during remote laser welding (RLW) of thin foils, with applications in battery tabs. Photodiodes are used as the primary source of data and are collected in real-time during RLW of copper-to-steel thin foils in the lap joint. Experiments are carried out by the nLight Compact 3 kW fiber laser integrated with the Scout-200 2D scanner. The paper reviews and compares se
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GASPARYAN, FERDINAND V. "UV p-i-n PHOTODIODES MADE ON WIDE BANDGAP SEMICONDUCTORS." Modern Physics Letters B 22, no. 05 (2008): 369–81. http://dx.doi.org/10.1142/s0217984908014870.

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In this paper, results of investigations on the static and dynamic characteristics, responsivity, internal noises, detectivity and noise equivalent power of the forward biased p-i-n photodiode made on wide band gap semiconductors operating in double injection regime are presented. Numerical simulations were made for 4H-SiC and GaN . It is shown that forward biased p-i-n photodiodes have high values of responsivity (~ 0.03 A/W for 4H-SiC and ~ 0.15 A/W for GaN ), detectivity (~1011 cm Hz 1/2 W-1 for 4H-SiC and ~ 8×1013 cm Hz 1/2 W-1 for GaN ) and low level of internal noises at room temperature
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Rozprawy doktorskie na temat "Photodiodes Gap"

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Bouthinon, Benjamin. "Impact des états de gap sur les performances des photodiodes organiques." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT072/document.

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Produites sur des substrats de grande dimension grâce aux technologies d'impression, les photodiodes organiques suscitent un intérêt grandissant pour leurs applications prometteuses dans le domaine de l'imagerie médicale, des interfaces hommes-machines et les grands instruments. Ces photodiodes (dont les performances tendent à concurrencer celles en silicium amorphe), présentent de nombreux avantages : simplicité du procédé d'impression, faible coût d'investissement, souplesse du substrat et propriétés d'absorption remarquables des polymères. Toutefois, les performances de ces photodiodes rest
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Lienhard, Pierre. "Caractérisation et modélisation du vieillissement des photodiodes organiques." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAY072/document.

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Les récents travaux sur l’intégration de polymères organiques dans des composants électroniques ont permis de développer des photodiodes rapides et sensibles, fabriquées sur des substrats souples et de grande surface. Cependant, la stabilité pose un problème majeur pour l’industrialisation de ces composants et contraint à l’utilisation d’une encapsulation coûteuse. Au cours de leur utilisation, les photodiodes sont soumises à de nombreux stress pouvant réduire leur durée de vie: la lumière (UV-visible), l’oxygène, la vapeur d’eau, la température, ou des stress électriques et mécaniques liés à
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NICHETTI, CAMILLA. "Development of avalanche photodiodes with engineered band gap based upon III-V semiconductors." Doctoral thesis, Università degli Studi di Trieste, 2021. http://hdl.handle.net/11368/2982139.

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This thesis is striving in the development and performance assessment of GaAs/AlGaAs avalanche photodiodes (APDs) with separated absorption and multiplication regions, which complement existing silicon detectors providing higher efficiency for X-ray detection. During the course of this thesis several APDs were fabricated utilizing molecular beam epitaxy and lithography and subsequently have been thoroughly characterized. This thesis is subdivided into six chapters. It sets in with a general description of APD structures and their functionalities prescinding the advantages of the developed APDs
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Gluszak, Edward A. "Laser beam induced current studies of Hg1-xCdxTe photodiodes." Thesis, Edith Cowan University, Research Online, Perth, Western Australia, 2006. https://ro.ecu.edu.au/theses/353.

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Laser-beam-induced-current (LBIC) is being investigated as a combined electro-optical (EO) alternative to individual electrical and optical based measurements of p-n junction photodiodes. The technique is non-destructive and employs a focused low-power laser beam that is scanned across the semiconductor surface, between two shorted ohmic contacts located at remote positions on either side of the scanned area. The LBIC image is then a two-dimensional map of the steady-state current-flow as a function of laser position. However, despite its simplicity, its application has thus far been limited t
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Zhang, Yun. "Fabrication and characterization of GaN visible-blind ultraviolet avalanche photodiodes." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29604.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Shen, Shyh-Chiang; Committee Member: Doolittle, William A.; Committee Member: Dupuis, Russell Dean. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Zhang, Yun. "Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42703.

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This dissertation describes the development of III-nitride (III-N) bipolar devices for optoelectronic and electronic applications. Research mainly involves device design, fabrication process development, and device characterization for Geiger-mode gallium nitride (GaN) deep-UV (DUV) p-i-n avalanche photodiodes (APDs), indium gallium nitride (InGaN)/GaN-based violet/blue laser diodes (LDs), and GaN/InGaN-based npn radio-frequency (RF) double-heterojunction bipolar transistors (DHBTs). All the epitaxial materials of these devices were grown in the Advanced Materials and Devices Group (AMDG) led
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Odendaal, Vicky. "On the Processing of InAsSb/GaSb photodiodes for infrared detection." Thesis, Nelson Mandela Metropolitan University, 2008. http://hdl.handle.net/10948/980.

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The objective of this dissertation is the development of the necessary processing steps needed to manufacture infrared photodiodes on InAs1-xSbx material. Preliminary surface preparation steps were performed on both InAs and InSb material, thus covering both possible extremes of the antimony mole fraction. The first experiments endeavoured to characterise the effect of several possible etchants with regards to etch rate, repeatability, limitations for photolithographic patterning and the resultant surface roughness. The etchants investigated include a lactic acid based etchant, a sulphuric aci
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Diale, Mmantsae Moche. "Schottky barrier diode fabrication on n-GaN for ultraviolet detection /." Access to E-Thesis, 2009. http://upetd.up.ac.za/thesis/available/etd-02112010-211125/.

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Tirino, Louis. "Transport Properties of Wide Band Gap Semiconductors." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5210.

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Transport Properties of Wide Band Gap Semiconductors Louis Tirino III 155 pages Directed by Dr. Kevin F. Brennan The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap semiconductor materials and their implications on device performance. Though the wide band gap semiconductors have great potential for a host of device applications, many gaps remain in the collective understanding about their properties, frustrating the evaluation of devices made from these materials. The model chosen for this study is based on semicla
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Diale, M. (Mmantsae Moche). "Schottky barrier diode fabrication on n-GaN for altraviolet detection." Thesis, University of Pretoria, 2010. http://hdl.handle.net/2263/28143.

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There are many potential areas for the utilization of GaN-based nitride materials, including ultraviolet photodetectors. Ultraviolet photodetectors are used in the military for missile plume detection and space communications. Medically, ultraviolet photodiodes are used in monitoring skin cancer. Schottky barrier metal-semiconductor contacts are choice devices for the manufacture of ultraviolet photodiodes due to higher short wavelength sensitivity and fast response. They also require simple fabrication technology; suffer lower breakdown voltages, and record larger leakage currents at lower vo
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Książki na temat "Photodiodes Gap"

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Rogalski, Antoni, Krzysztof Adamiec, and Jaroslaw Rutkowski. Narrow-Gap Semiconductor Photodiodes. SPIE, 2000. http://dx.doi.org/10.1117/3.2536930.

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Rogalski, Antoni, Krzysztof Adamiec, and Jaroslaw Rutkowski. Narrow-Gap Semiconductor Photodiodes. SPIE, 2000. http://dx.doi.org/10.1117/3.pm77.

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Narrow-Gap Semiconductor Photodiodes. SPIE, 2000.

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Narrow-Gap Semiconductor Photodiodes (SPIE Press Monograph Vol. PM77). SPIE Publications, 2000.

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Części książek na temat "Photodiodes Gap"

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Rogalski, Antoni, Krzysztof Adamiec, and Jaroslaw Rutkowski. "Superlattice Photodiodes." In Narrow-Gap Semiconductor Photodiodes. SPIE, 2000. http://dx.doi.org/10.1117/3.pm77.ch10.

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Rogalski, Antoni, Krzysztof Adamiec, and Jaroslaw Rutkowski. "HgCdTe Photodiodes." In Narrow-Gap Semiconductor Photodiodes. SPIE, 2000. http://dx.doi.org/10.1117/3.pm77.ch7.

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Rogalski, Antoni, Krzysztof Adamiec, and Jaroslaw Rutkowski. "III–V Photodiodes." In Narrow-Gap Semiconductor Photodiodes. SPIE, 2000. http://dx.doi.org/10.1117/3.pm77.ch6.

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Rogalski, Antoni, Krzysztof Adamiec, and Jaroslaw Rutkowski. "Lead Salt Photodiodes." In Narrow-Gap Semiconductor Photodiodes. SPIE, 2000. http://dx.doi.org/10.1117/3.pm77.ch9.

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Rogalski, Antoni, Krzysztof Adamiec, and Jaroslaw Rutkowski. "Narrow-Gap Semiconductor Materials." In Narrow-Gap Semiconductor Photodiodes. SPIE, 2000. http://dx.doi.org/10.1117/3.pm77.ch2.

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Rogalski, Antoni, Krzysztof Adamiec, and Jaroslaw Rutkowski. "HgZnTe and HgMnTe Photodiodes." In Narrow-Gap Semiconductor Photodiodes. SPIE, 2000. http://dx.doi.org/10.1117/3.pm77.ch8.

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Rogalski, Antoni, Krzysztof Adamiec, and Jaroslaw Rutkowski. "Back Matter." In Narrow-Gap Semiconductor Photodiodes. SPIE, 2000. http://dx.doi.org/10.1117/3.pm77.bm.

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Rogalski, Antoni, Krzysztof Adamiec, and Jaroslaw Rutkowski. "Focal Plane Arrays." In Narrow-Gap Semiconductor Photodiodes. SPIE, 2000. http://dx.doi.org/10.1117/3.pm77.ch5.

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Rogalski, Antoni, Krzysztof Adamiec, and Jaroslaw Rutkowski. "Front Matter." In Narrow-Gap Semiconductor Photodiodes. SPIE, 2000. http://dx.doi.org/10.1117/3.pm77.fm.

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Tetyorkin, Volodymyr, Andriy Sukach, and Andriy Tkachuk. "Infrared Photodiodes on II-VI and III-V Narrow-Gap Semiconductors." In Photodiodes - From Fundamentals to Applications. InTech, 2012. http://dx.doi.org/10.5772/52930.

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Streszczenia konferencji na temat "Photodiodes Gap"

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Korde, Raj, John Seely, and Eric Gullikson. "Solar blind UV photodiodes with 100% internal quantum efficiency based on silicon direct band gap." In CubeSats, SmallSats, and Hosted Payloads for Remote Sensing VIII, edited by Thomas S. Pagano, Jeffery J. Puschell, and Sachidananda R. Babu. SPIE, 2024. http://dx.doi.org/10.1117/12.3037964.

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Flodgren, Vidar, Abhijit Das, Joachim E. Sestoft, et al. "On-Chip Light Transmission between Nanoscale Optoelectronic Devices." In British and Irish Conference on Optics and Photonics. Optica Publishing Group, 2024. https://doi.org/10.1364/bicop.2024.f4a.4.

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On-chip light broadcasting can reduce spatial footprint and enhance energy efficiency in photonic neuromorphic systems. We demonstrate on-chip light transmission between InP nanowire photodiodes on silicon, addressing the gap towards complete nanoscale photonic integrated circuits.
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Khalil, Ahmed Abdelhady A., Maram T. H. Abou Kana, and Mohamed A. Swillam. "Behavior effect of 2D dopants Semiconductor on the efficiency of pn-photodiode based TMDC-MoS2." In Frontiers in Optics. Optica Publishing Group, 2024. https://doi.org/10.1364/fio.2024.jtu4a.15.

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SiC, GaN as 2D materials and MoS2 as a TMDC semiconducting material was chosen, a pn-photodiode was fabricated, the resulted photodiode external and internal quantum efficiency was compared to that of MoS2 based photodiode.
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Kim, Juhyeon, Nathan Dvořák, and Pei-Cheng Ku. "Visible-Wavelength Chip-Scale Polarization-Sensitive Spectrometer Using GaN Photodiodes." In CLEO: Science and Innovations. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sf2a.2.

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A chip-scale spectrometer is proposed to resolve linear polarization information in the visible-wavelength range. The design was supported with preliminary experimental data based on elliptical cross-section nanopillar-shaped GaN photodetectors.
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Delgado-Aguillon, J., Camilo Ruiz, M. Rosete-Aguilar, Enrique García-García, Cruz Méndez, and J. Garduño-Mejia. "Chromatic dispersion effects by sub-100 fs pulses on a non-linear confocal positioner based on a GaP photodiode." In Latin America Optics and Photonics Conference. Optica Publishing Group, 2024. https://doi.org/10.1364/laop.2024.tu4a.19.

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A nonlinear confocal positioning system was implemented for a ti:sapphire laser, where chromatic dispersion plays an important role for pulses below 100 fs. We use an astigmatic positioning system to characterize the chromatic aberration introduced.
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Xu, Zhiyu, Alexandra Dolgashev, Davide Balzerani, Theeradetch Detchprohm, Nepomuk Otte, and Russell D. Dupuis. "Improved performance of GaN p-i-n homojunction avalanche photodiodes with shallow-bevel-mesa edge termination." In Gallium Nitride Materials and Devices XX, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2025. https://doi.org/10.1117/12.3038838.

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Rogalski, Antoni, and Manijeh Razeghi. "Narrow-gap semiconductor photodiodes." In Optoelectronics and High-Power Lasers & Applications, edited by Gail J. Brown. SPIE, 1998. http://dx.doi.org/10.1117/12.304467.

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Benedict, M. K. "Review Of Band-Gap Engineered Photodiodes." In 1988 Technical Symposium on Optics, Electro-Optics, and Sensors, edited by Eustace L. Dereniak. SPIE, 1988. http://dx.doi.org/10.1117/12.946630.

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Sizov, Fiodor F., Joanna V. Gumenjuk-Sichevskaya, and Vladimir V. Tetyorkin. "Carrier transport mechanisms in narrow-gap photodiodes." In International Conference on Solid State Crystals '98, edited by Antoni Rogalski and Jaroslaw Rutkowski. SPIE, 1999. http://dx.doi.org/10.1117/12.344748.

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Sokolovsky, Bogdan S., Volodymyr K. Pysarevsky, Andriy P. Vlasov, and Grygoriy A. II'chuk. "Peculiarities of graded-gap photodiodes with nonmonotonic coordinate profile of the band gap." In Moscow, Russia, edited by Anatoly M. Filachov, Vladimir P. Ponomarenko, and Alexander I. Dirochka. SPIE, 2005. http://dx.doi.org/10.1117/12.628909.

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Raporty organizacyjne na temat "Photodiodes Gap"

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Schetzina, Jan. Flip-Chip Bonding Equipment for UV Focal Plane Array Development Based on GaN/AlGaN p-i-n Photodiodes. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada398802.

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