Статті в журналах: "Hot Carriers Injection"

1

Khurgin, Jacob B. "Fundamental limits of hot carrier injection from metal in nanoplasmonics." Nanophotonics 9, no. 2 (February 25, 2020): 453–71. http://dx.doi.org/10.1515/nanoph-2019-0396.

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AbstractThe evolution of non-equilibrium carriers excited in the process of decay of surface plasmon polaritons (SPPs) in metal is described for each step – from the generation of carriers to their extraction from the metal. The relative importance of various carrier-generating mechanisms is discussed. It is shown that both the generation of carriers and their decay are inherently quantum processes as, for realistic illumination conditions, no more than a single SPP per nanoparticle exists at a given time. As a result, the distribution of non-equilibrium carriers cannot be described by a single temperature. It is also shown that the originally excited carriers that have not undergone a single electron-electron scattering event are practically the only ones that contribute to the injection. The role of momentum conservation in carrier extraction is discussed, and it is shown that, if all the momentum conservation rules are relaxed, it is the density of states in the semiconductor/dielectric that determines the ultimate injection efficiency. A set of recommendations aimed at improving the efficiency of plasmonic-assisted photodetection and (to a lesser degree) photocatalysis is made in the end.

2

Zhu, Lang, Zongpeng Song, Ran Li, and Haiou Zhu. "Hot carrier dynamics in MoS₂/WS₂ heterostructure." Nanotechnology 33, no. 19 (February 15, 2022): 195701. http://dx.doi.org/10.1088/1361-6528/ac4e41.

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Abstract TMDs based heterostructure have drawn much attention for its potential application in photoelectric devices benefiting from the rapid and effective carrier separation and ultra-long interlayer exciton lifetime. Recent studies on carrier dynamics of TMDs based heterostructures are mainly focused on the transfer process of photo-generated carriers across the interface and lifetime of interlayer exciton but little attention is paid on the dynamics of hot carriers. Here, the carrier dynamics of hot carriers in MoS2/WS2 heterostructure is investigated by transient absorption spectra. Rapid separation of electron and hole is observed. More importantly, hot carriers of C exciton, which contribute to the absorption of most of the visible light, could compensate for the carrier loss in the band edge exciton energy band through the intervalley transfer process. This re-injection process of hot carriers of C exciton could compensate for carrier depletion in photoelectric devices, thus may greatly improve the light utilization in optoelectronic devices.

3

Marrakh, R., and A. Bouhdada. "Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection." Active and Passive Electronic Components 26, no. 4 (2003): 197–204. http://dx.doi.org/10.1080/08827510310001624363.

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The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers, caused by the high electric field in the MOS structure, is localized in the LDD region. The modeling of the drain current in relation to defects due to the hot-carrier injection allows us to investigate the I–V characteristics and the transconductance of devices. Consequently, we can know the amount of the device degradation caused by these defects in order to find technological solutions to optimize reliability.

4

BHATTACHARYA, PALLAB. "TUNNEL INJECTION LASERS." International Journal of High Speed Electronics and Systems 09, no. 04 (December 1998): 847–66. http://dx.doi.org/10.1142/s0129156498000361.

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Carrier heating in conventional quantum well lasers can lead to several deleterious effects and are related to the transport and thermalization characteristics of injected carriers. The properties of a quantum well laser in which the electrons are directly transported to the lasing subband by tunneling is described here. The resulting device — a tunnel injection laser — is shown to have negligible gain compression, superior high-temperature performance, lower Auger recombination and wavelength chirp, and better high frequency modulation characteristics when compared to conventional lasers. All these improvements are attributed to the reduction of hot-carrier population in the active region of the laser. Results are presented here for lasers made with GaAs — and InP — based heterostructure systems.

5

Liu, Tingting, Cheng Zhang, and Xiaofeng Li. "Strain engineering for enhanced hot-carrier photodetection." Journal of Applied Physics 132, no. 6 (August 14, 2022): 064901. http://dx.doi.org/10.1063/5.0099544.

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Hot-carrier devices in metal–semiconductor junctions have attracted considerable attention but still with quantum efficiencies far from expectations. Introducing the lattice strain to the material can effectively modulate the electronic structure, providing a way to control the hot-carrier dynamics. Here, we study how this strain affects the generation, transport, and injection of hot carriers in gold (Au) by using first-principles calculations and evaluate the overall responses of Au-based hot-carrier devices by Monte Carlo simulation. We find that the compressive strain can significantly increase the hot-electron generation from direct transition at E > 1.1 eV for Au. The compressive strain delocalizes the band structure and decreases the electron density of state, which, in turn, reduce electron–electron and electron–phonon scatterings to improve the transport of hot carriers. Taking the Au/TiO2 device as an example, we find that the compressive strain (−6%) can enable a 1.5- to 3-fold enhancement of quantum efficiency and responsivity at a photon energy between 1.2 and 3 eV.

6

Wang, Yunxiang, Buyun Chen, Deming Meng, Boxiang Song, Zerui Liu, Pan Hu, Hao Yang, et al. "Hot Electron-Driven Photocatalysis Using Sub-5 nm Gap Plasmonic Nanofinger Arrays." Nanomaterials 12, no. 21 (October 24, 2022): 3730. http://dx.doi.org/10.3390/nano12213730.

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Semiconductor photocatalysis has received increasing attention because of its potential to address problems related to the energy crisis and environmental issues. However, conventional semiconductor photocatalysts, such as TiO2 and ZnO, can only be activated by ultraviolet light due to their wide band gap. To extend the light absorption into the visible range, the localized surface plasmon resonance (LSPR) effect of noble metal nanoparticles (NPs) has been widely used. Noble metal NPs can couple incident visible light energy to strong LSPR, and the nonradiative decay of LSPR generates nonthermal hot carriers that can be injected into adjacent semiconductor material to enhance its photocatalytic activity. Here we demonstrate that nanoimprint-defined gap plasmonic nanofinger arrays can function as visible light-driven plasmonic photocatalysts. The sub-5 nm gaps between pairs of collapsed nanofingers can support ultra-strong plasmon resonance and thus boost the population of hot carriers. The semiconductor material is exactly placed at the hot spots, providing an efficient pathway for hot carrier injection from plasmonic metal to catalytic materials. This nanostructure thus exhibits high plasmon-enhanced photocatalytic activity under visible light. The hot carrier injection mechanism of this platform was systematically investigated. The plasmonic enhancement factor was calculated using the finite-difference time-domain (FDTD) method and was consistent with the measured improvement of the photocatalytic activity. This platform, benefiting from the precise controllable geometry, provides a deeper understanding of the mechanism of plasmonic photocatalysis.

7

Jang, Taejin, Myung-Hyun Baek, Suhyeon Kim, Sungmin Hwang, Jeesoo Chang, Kyung Kyu Min, Kyungchul Park, and Byung-Gook Park. "Analysis of a Schottky Barrier MOSFET for Synaptic Device Using Hot Carrier Injection." Journal of Nanoscience and Nanotechnology 20, no. 11 (November 1, 2020): 6592–95. http://dx.doi.org/10.1166/jnn.2020.18766.

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In this paper, we analyze the hot carrier injection (HCI) in an asymmetric dual-gate structure with a metallic source/drain. We propose a program/erase scheme where HCI occurs on the source side of the body. Owing to the large resistance of the Schottky barrier used, a large electric field is formed around the Schottky barrier. Therefore, impact ionization occurs as the gate voltage is increased and hot carriers are injected into the source side, which is less influenced by the drain voltage. We also analyze the program and erase efficiency by adjusting the Schottky barrier height or by using dopant segregation technique. We expect a small amount of current to flow and great efficiency of the program/erase operations to use as a synaptic device.

8

Belenky, G. L., A. Kastalsky, S. Luryi, P. A. Garbinski, A. Y. Cho, and D. L. Sivco. "Measurement of the effective temperature of majority carriers under injection of hot minority carriers in heterostructures." Applied Physics Letters 64, no. 17 (April 25, 1994): 2247–49. http://dx.doi.org/10.1063/1.111659.

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9

Wang, Yimin, Yun Li, Yanbin Yang, and Wenchao Chen. "Hot Carrier Injection Reliability in Nanoscale Field Effect Transistors: Modeling and Simulation Methods." Electronics 11, no. 21 (November 4, 2022): 3601. http://dx.doi.org/10.3390/electronics11213601.

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Hot carrier injection (HCI) can generate interface traps or oxide traps mainly by dissociating the Si-H or Si-O bond, thus affecting device performances such as threshold voltage and saturation current. It is one of the most significant reliability issues for devices and circuits. Particularly, the increase in heat generation per unit volume due to high integration density of advanced integrated circuits leads to a severe self-heating effect (SHE) of nanoscale field effect transistors (FETs), and low thermal conductivity of materials in nanoscale FETs further aggravates the SHE. High temperature improves the HCI reliability in the conventional MOSFET with long channels in which the energy of carriers can be relaxed. However, high temperature due to severe SHE deteriorates HCI reliability in nanoscale FETs, which is a big concern in device and circuit design. In this paper, the modeling and simulation methods of HCI in FETs are reviewed. Particularly, some recently proposed HCI models with consideration of the SHE are reviewed and discussed in detail.

10

Li, Mengyao, Yating Zhang, Xin Tang, Jitao Li, Silei Wang, Tengteng Li, Hongliang Zhao, Qingyan Li, Qi Wang, and Jianquan Yao. "Improving performance of hybrid perovskite/graphene-based photodetector via hot carriers injection." Journal of Alloys and Compounds 895 (February 2022): 162496. http://dx.doi.org/10.1016/j.jallcom.2021.162496.

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11

REGISTER, LEONARD F., WANQIANG CHEN, XIN ZHENG, and MICHAEL STROSCIO. "CARRIER CAPTURE AND TRANSPORT WITHIN TUNNEL INJECTION LASERS: A QUANTUM TRANSPORT ANALYSIS." International Journal of High Speed Electronics and Systems 12, no. 04 (December 2002): 1135–45. http://dx.doi.org/10.1142/s0129156402001952.

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Hot electron distributions within the active region of quantum well lasers lead to gain suppression, reduced quantum efficiency, and increased diffusion capacitance, greater low-frequency roll-off and high-frequency chirp. Recently, "tunnel injection lasers" have been developed to minimize electron heating within the active quantum well region by direct injection of cool electrons from the separate confinement region into the lasing subband(s) through a tunneling barrier. Tunnel injection lasers, however, also present a rich physics of transport and scattering, and a correspondingly rich set of challenges to simulation and device optimization. In this work, some of the fundamental physics of carrier capture and transport that should be addressed for optimization of such lasers is elucidated using Schrödinger Equation Monte Carlo (SEMC) based quantum transport simulation. In the process, qualitative limitations of the Golden-Rule of scattering in this application are pointed out by comparison. Specifically, a Golden-Rule-based analysis of the carrier injection into the active region of the ideal tunnel injection laser would suggest approximately uniform injection of electrons among the nominally degenerate quantum well states from the separate confinement region states. However, such an analysis ignores (via a random-phase approximation among the final states) the basic real-space transport requirement that injected carriers still must pass through the wells sequentially, coherently or otherwise, with an associated attenuation of the injected current into each subsequent well due to electron-hole recombination in the prior well. Transport among the wells then can be either thermionic, or, of theoretically increasing importance for low temperature carriers, via tunneling. Coherent resonant tunneling between wells, however, is sensitive to the potential drops between wells that split the energies of the lasing subbands and (further) localozes the electron states to individual wells. In this work such transport issues are elucidated using Schrödinger Equation Monte Carlo (SEMC) based quantum transport simulation.

12

Ioannou, D. E., F. L. Duan, S. P. Sinha, and A. Zaleski. "Opposite-channel-based injection of hot-carriers in SOI MOSFET's: physics and applications." IEEE Transactions on Electron Devices 45, no. 5 (May 1998): 1147–54. http://dx.doi.org/10.1109/16.669576.

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13

Liu, Kunzi, Li Chen, Tian Luo, Zihui Zhao, Ping Ouyang, Jiaxin Zhang, Qiushuang Chen, et al. "Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes." Applied Physics Letters 121, no. 24 (December 12, 2022): 241105. http://dx.doi.org/10.1063/5.0131013.

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The distribution of electrons and holes inside the multiple-quantum wells is highly non-uniform for AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) due to both insufficient hole injection and excessive electron leakage. A key factor to improve the quantum efficiency of DUV-LED is to reduce the proportion of hot electrons in n-AlGaN through carrier deceleration. In this work, we propose a structure design by introducing an additional Al0.55Ga0.45N/Al0.42Ga0.58N superlattice electron restriction layer between the active region and n-AlGaN for electron deceleration. The superlattice structure not only reduces the mobility of the electrons, which helps to balance the distribution of carriers in the active region, thus, promoting radiative recombination, but also facilitates the lateral transport of the electrons, thus, reducing the current crowding effect through band engineering. Low temperature electroluminescence analysis reveals that the improvement of quantum efficiency is due to both enhanced carrier injection efficiency and radiation recombination efficiency in the active region.

14

Thangamuthu, Madasamy, T. V. Raziman, Olivier J. F. Martin, and Junwang Tang. "Review—Origin and Promotional Effects of Plasmonics in Photocatalysis." Journal of The Electrochemical Society 169, no. 3 (March 1, 2022): 036512. http://dx.doi.org/10.1149/1945-7111/ac5c97.

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Plasmonic effects including near-field coupling, light scattering, guided mode through surface plasmon polaritons (SPPs), Förster resonant energy transfer (FRET), and thermoplasmonics are extensively used for harnessing inexhaustible solar energy for photovoltaics and photocatalysis. Recently, plasmonic hot carrier-driven photocatalysis has received additional attention thanks to its specific selectivity in the catalytic conversion of gas molecules and organic compounds, resulting from the direct injection of hot carriers into the lowest unoccupied molecular orbital of the adsorbate molecule. The excellent light trapping property and high efficiency of hot charge-carrier generation through electromagnetic surface plasmon decay have been identified as the dominant mechanisms that promote energy-intensive chemical reactions at room temperature and atmospheric pressure. However, understanding the electromagnetic effects of plasmonics and distinguishing them from chemical effects in photocatalysis is challenging. While there exist several reviews underlining the experimental observations of plasmonic effects, this critical review addresses the physical origin of the various plasmon-related phenomena and how they can promote photocatalysis. The conditions under which each plasmonic effect dominates and how to distinguish one from another is also discussed, together with the analysis of the photoconversion efficiency. Finally, future research directions are proposed with the aim to accelerate progress in this field at the interface between chemistry and physics.

15

Bolotov, L. N., I. V. Makarenko, A. F. Shulekin, and A. N. Titkov. "Minority carriers contribution and hot-electron injection process in tunnel spectroscopy of H-passivated silicon surfaces." Surface Science 331-333 (July 1995): 468–72. http://dx.doi.org/10.1016/0039-6028(95)00328-2.

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Fleming, R. M., C. H. Seager, D. V. Lang, and J. M. Campbell. "Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors." Journal of Applied Physics 118, no. 1 (July 2, 2015): 015703. http://dx.doi.org/10.1063/1.4923358.

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17

Semenov, Yu S., A. L. Podkorytov, V. V. Gorupakha, I. Yu Semion, A. Yu Orobtsev та E. I. Shumel’chik. "Еfficiency increase of powdered coal application at hot metal production and limestone calcination under unstable technology conditions". Ferrous Metallurgy. Bulletin of Scientific , Technical and Economic Information 76, № 7 (11 серпня 2020): 676–90. http://dx.doi.org/10.32339/0135-5910-2020-7-676-690.

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Operation of Ukraine ferrous metallurgy under conditions of dependence on import and instability of energy carriers supply, shortage of investments in modernization of production equipment, make the matter of cooperation between steel-works and research organization particularly actual. Basic results of cooperation between Z.I. Nekrasov Institute of Ferrous metallurgy, NAN of Ukraine and Dnepr steel-works in 2017–2019 on blast sfurnace operation pefection and technology of powdered coal injection into rotating limestone calcination furnaces. Results of the finding of the powdered coal optimal consumption shown, which ensure a high efficiency of the coke substitution, reaching of maximum possible blast furnace productivity as well as satisfactory utilization degree of the reducing gas ability. Results of implementation of a complex of measures presented, which ensure a rational distribution of the powdered coal by BF air tuyeres for making the heat conditions of the tuyere zone even by the blast furnace circle. Efficiency of application of technology of joint injection the powdered coal and natural gas was shown, which is achieved by improving the powdered coal combustion conditions in case of increase their mixing degree. Recommendations quoted for blast furnaces starting-up after their idling for a period exceeding the permissible one, without tapping the plug hot metal. The recommendations ensure an accident-free putting a blast furnace into operation followed by reaching planned parameters. Results of usage sensors information, measuring temperature of gas flow above the charge surface presented. The results allow to prove the correction of blast furnace charging mode by an expert module, generating correction impact to support control actions by technological personal. A complex of measures formed to prevent a disturbance of a blast furnace running in case of powdered coal injection in an amount exceeding 140 kg/t of hot metal and without application of special washover materials. The results of efficiency of the mastered technology, envisaging application manganese-bearing materials at a constant base, were shown. Results of diagnostics of workability of the facility for powdered coal injection into rotating limestone calcinating furnace presented, followed by elaboration recommendation on correction parameters of injection facility operation.

18

Zhu, He, Huilin Hu, Minheng Ye, Jinhua Ye, and Defa Wang. "PbS1−xSex-Quantum-Dot@MWCNT/P3HT Nanocomposites with Tunable Photoelectric Conversion Performance." Inorganics 9, no. 12 (December 10, 2021): 87. http://dx.doi.org/10.3390/inorganics9120087.

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The photoelectric performance of quantum dots (QDs)-based nanocomposites is closely related to the optical properties of QDs, which play a critical role in the optical absorption and separation/transfer of charge carriers. Herein, we report a nanocomposite composed of light absorber PbS1−xSex quantum dots (QDs), electron-conducting multiwalled carbon nanotubes (MWCNTs) and hole-conducting poly-3-hexylthiophene (P3HT) with tunable photoelectric conversion performance. In addition to using the quantization effect, we proposed solid-solution PbS1−xSex QDs (x = 0, 0.25, 0.5, 0.75, 1) for band gap engineering. In particular, we successfully synthesized relatively small (~5.3 nm) and uniform QDs via the hot-injection method by using PbCl2, S/Se powder and environmentally friendly oleylamine (OLA) as the precursors and/or solvent. By increasing the content of Se, the band gap of PbS1−xSex QDs decreased along with the decrease in the conduction band and valence band edges. The suitable energy level alignment enabled the efficient transfer of photoinduced charge carriers, and hence a much higher photoelectric conversion performance of the PbS1−xSex-QD@MWCNT/P3HT nanocomposites than the individual QDs, P3HT, and binary PbS1−xSex-QD@MWCNT, as well as the best performance, was achieved over PbS0.75Se0.25-QD@MWCNT/P3HT.

19

Wang, Ren Bao, Hai Hong Niu, and Lei Wan. "Two Sizes CdSe Quantum Dots Co-Sensitized TiO₂-Nano-SiO₂ Hybrid Photoelectrodes for Solar Cells Applications." Key Engineering Materials 575-576 (September 2013): 3–6. http://dx.doi.org/10.4028/www.scientific.net/kem.575-576.3.

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The high-quality two sizes CdSe quantum dots (QDs) with nearly monodisperse size and shape were synthesized by the employed hot injection method with some modifications. The nanoparticles diameters were to be 2.6nm and 3.0nm respectively. To improve crystallization property and specific surface area of TiO2 and to inhibit recombination processes of photoinduced electrons effectively, TiO2-nano-SiO2 hybrid films were prepared by adding proper meso-porous SiO2 into TiO2, in which the mass ratio of SiO2 to TiO2 was 5%. CdSe QDs were linked to TiO2-nano-SiO2 films using 3-mercaptopropionic acid to increase CdSe QDs adsorption. Two sizes CdSe QDs were achieved both to promote charge separation and to ensure the porper mobile pathway of free carriers. The J-V characterization showed that two sizes CdSe QDs co-sensitized TiO2-nano-SiO2 hybrid photoelectrodes had higher short circuit current density (JSC) and open circuit voltage (VOC), compared to one size CdSe QDs.

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Зегря, Г. Г., В. П. Улин, А. Г. Зегря, Н. В. Улин та Ю. М. Михайлов. "Влияние типа проводимости и уровня легирования кристаллов кремния на размеры каналов пор, формирующихся в них при анодном травлении в растворах плавиковой кислоты". Журнал технической физики 89, № 10 (2019): 1575. http://dx.doi.org/10.21883/jtf.2019.10.48175.91-19.

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AbstractIn this paper, we discuss causes of the multidirectional effect of changes in the concentrations of free charge carriers in silicon crystals of p - and n -type conductivity on the transverse dimensions of pores formed as a result of anodic etching in hydrofluoric acid solutions, as well as the effect of anodic current density on pore size. The observed dependences are explained based on the concepts of electrochemical pore formation in semiconductor crystals as self-organizing cooperative processes accompanied by the injection of electrons from the chemical reaction region at the pore advancement front. Differences in the size of pores forming at the same current density in crystals differing in type and concentration of free charge carriers are associated with the effective temperature of the front of the cooperative chemical reaction at the bottom of germinating pores. This temperature, in turn, correlates with the power density of thermal energy released in the near-surface region of the etching crystal, either due to recombination processes for a p -type semiconductor or direct or indirect energy transfer from hot electrons to lattice vibrations in the case of a n -type semiconductor. The characteristic relaxation times of injected nonequilibrium electrons were calculated depending on the concentrations of the majority charge carriers in silicon crystals of both types of conductivity and the corresponding thicknesses of the regions of relaxation energy release. The revealed patterns of concentration changes in the power density of heat release in the near-frontal region of etching silicon crystals of p - and n -type conductivity are in good agreement with observed changes in the size of germinating pores.

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Bastola, Ebin, Kamala Khanal Subedi, Khagendra P. Bhandari, and Randy J. Ellingson. "Solution-processed Nanocrystal Based Thin Films as Hole Transport Materials in Cadmium Telluride Photovoltaics." MRS Advances 3, no. 41 (2018): 2441–47. http://dx.doi.org/10.1557/adv.2018.349.

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ABSTRACTThe cadmium telluride (CdTe) photovoltaic (PV) comprise an efficient and cost-effective technology for harvesting solar energy. However, device efficiency remains limited in part by low-open circuit voltage (VOC) and fill factor (FF) due to inefficient transport of photo-generated charge carriers. Given the deep valence band of CdTe, the use of copper/gold (Cu/Au) as a back contact serves primarily to narrow the width of the inherent Schottky junction evident in CdTe solar cells (in our laboratory, Cu/Au has been used as a standard back contact). For efficient transport of carriers to and into the back contact, a hole transport layer (HTL) is desired with valence band edge comparable to that of CdTe (∼ -5.9 eV). Here, we report solution-processed nanocrystal (NCs) based thin films as HTLs in CdTe solar cells. The earth abundant materials we discuss include iron pyrite (FeS2), nickel-alloyed iron pyrite (NixFe1-xS2), zinc copper sulfide (ZnxCu1-xS) nanocomposites, and perovskite-based films. The FeS2 and NixFe1-xS2 NCs are synthesized by a hot-injection route, and thin films are fabricated by drop-casting, and spin-coating techniques using colloidal NCs. ZnxCu1-xS thin films are fabricated by chemical bath deposition. These NC-based thin films are applied and studied as the HTLs in CdTe devices. On using these materials, the device performance can be increased up to 10% compared to the standard Cu/Au back contact. Here, we discuss the benefits, challenges, and opportunities for these back contact materials in CdTe photovoltaics.

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Moddel, Garret, Ayendra Weerakkody, David Doroski, and Dylan Bartusiak. "Optical-Cavity-Induced Current." Symmetry 13, no. 3 (March 22, 2021): 517. http://dx.doi.org/10.3390/sym13030517.

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The formation of a submicron optical cavity on one side of a metal–insulator–metal (MIM) tunneling device induces a measurable electrical current between the two metal layers with no applied voltage. Reducing the cavity thickness increases the measured current. Eight types of tests were carried out to determine whether the output could be due to experimental artifacts. All gave negative results, supporting the conclusion that the observed electrical output is genuinely produced by the device. We interpret the results as being due to the suppression of vacuum optical modes by the optical cavity on one side of the MIM device, which upsets a balance in the injection of electrons excited by zero-point fluctuations. This interpretation is in accord with observed changes in the electrical output as other device parameters are varied. A feature of the MIM devices is their femtosecond-fast transport and scattering times for hot charge carriers. The fast capture in these devices is consistent with a model in which an energy ∆E may be accessed from zero-point fluctuations for a time ∆t, following a ∆E∆t uncertainty-principle-like relation governing the process.

23

Lee, Jae-Sung. "Reliability Analysis for Deuterium Incorporated Gate Oxide Film through Negative-bias Temperature Instability and Hot-carrier Injection." Journal of the Korean Institute of Electrical and Electronic Material Engineers 21, no. 8 (August 1, 2008): 687–94. http://dx.doi.org/10.4313/jkem.2008.21.8.687.

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24

Vuillaume, D., A. Bravaix, and D. Goguenheim. "Hot-carrier injections in SiO2." Microelectronics Reliability 38, no. 1 (February 1998): 7–22. http://dx.doi.org/10.1016/s0026-2714(97)00179-0.

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Hawe, Philipp, Vitor R. R. Silveira, Robert Bericat Vadell, Erik Lewin, and Jacinto Sá. "Plasmon-Mediated Oxidation Reaction on Au/p-Cu2O: The Origin of Hot Holes." Physchem 1, no. 2 (July 27, 2021): 163–75. http://dx.doi.org/10.3390/physchem1020011.

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More sustainable solutions are needed to produce chemicals and fuels, mainly to face rising demands and mitigate climate change. Light, as a reagent, has emerged as a route to activate small molecules, e.g., H2O, CO2, N2, and make complex chemicals in a process called photocatalysis. Several photosystems have been proposed, with plasmonic technology emerging as one the most promising technologies due to its high optical absorption and hot-carrier formation. However, the lifetime of hot carriers is unsuitable for direct use; therefore, they are normally coupled with suitable charge-accepting materials, such as semiconductors. Herein, a system is reported consisting of Au supported in p-Cu2O. The combination of p-Cu2O intrinsic photoactivity with the plasmonic properties of Au extended the system’s optical absorption range, increasing photocatalytic efficiency. More importantly, the system enabled us to study the underlying processes responsible for hot-hole transfer to p-Cu2O. Based on photocatalytic studies, it was concluded that most of the holes involved in aniline photo-oxidation come from hot-carrier injections, not from the PIRET process.

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Chen, Yuzhong, Yujie Li, Yida Zhao, Hongzhi Zhou, and Haiming Zhu. "Highly efficient hot electron harvesting from graphene before electron-hole thermalization." Science Advances 5, no. 11 (November 2019): eaax9958. http://dx.doi.org/10.1126/sciadv.aax9958.

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Although the unique hot carrier characteristics in graphene suggest a new paradigm for hot carrier–based energy harvesting, the reported efficiencies with conventional photothermoelectric and photothermionic emission pathways are quite low because of inevitable hot carrier thermalization and cooling loss. Here, we proposed and demonstrated the possibility of efficiently extracting hot electrons from graphene after carrier intraband scattering but before electron-hole interband thermalization, a new regime that has never been reached before. Using various layered semiconductors as model electron-accepting components, we generally observe ultrafast injection of energetic hot electrons from graphene over a very broad photon energy range (visible to mid-infrared). The injection quantum yield reaches as high as ~50%, depending on excitation energy but remarkably, not on fluence, in notable contrast with conventional pathways with nonlinear behavior. Hot electron harvesting in this regime prevails over energy and carrier loss and closely resembles the concept of hot carrier solar cell.

27

Ma, Xiao-Hua, Yan-Rong Cao, Yue Hao, and Yue Zhang. "Hot carrier injection degradation under dynamic stress." Chinese Physics B 20, no. 3 (March 2011): 037305. http://dx.doi.org/10.1088/1674-1056/20/3/037305.

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28

Kwon, Hyuk-Min, Dae-Hyun Kim та Tae-Woo Kim. "Hot carrier instability associated with hot carrier injection and charge injection in In0.7Ga0.3As MOSFETs with high-κ stacks". Japanese Journal of Applied Physics 58, № 11 (22 жовтня 2019): 110906. http://dx.doi.org/10.7567/1347-4065/ab4ad4.

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29

Lorke, Michael, Igor Khanonkin, Stephan Michael, Johann Peter Reithmaier, Gadi Eisenstein, and Frank Jahnke. "Carrier dynamics in quantum-dot tunnel-injection structures: Microscopic theory and experiment." Applied Physics Letters 121, no. 10 (September 5, 2022): 103503. http://dx.doi.org/10.1063/5.0101613.

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Tunneling-injection structures are incorporated in semiconductor lasers in order to overcome the fundamental dynamical limitation due to hot carrier injection by providing a carrier transport path from a cold carrier reservoir. The tunneling process itself depends on band alignment between quantum-dot levels and the injector quantum well, especially as in these devices LO-phonon scattering is dominant. Quantum dots with their first excited state near the quantum well bottom profit the most from tunnel coupling. As inhomogeneous broadening is omnipresent in quantum dot structures, this implies that individual members of the ensemble couple differently to the injector quantum well. Quantum dots with higher energy profit less, as the phonon couples to higher, less occupied states. Likewise, if the energy difference between ground state and quantum well exceeds the LO-phonon energy, scattering becomes increasingly inefficient. Therefore, within 20–30 meV, we find quantum dots that benefit substantially different from the tunnel coupling. Furthermore, in quantum dots with increasing confinement depth, excited states become successively confined. Here, scattering gets more efficient again, as subsequent excited states reach the phonon resonance with the quantum well bottom. Our results provide guidelines for the optimization of tunnel-injection lasers. Theoretical results for electronic state calculations in connection with carrier–phonon and carrier–carrier scattering are compared to the experimental results of the temporal gain recovery after a short pulse perturbation.

30

Tran, Minh Dao, Sung-Gyu Lee, Sunam Jeon, Sung-Tae Kim, Hyun Kim, Van Luan Nguyen, Subash Adhikari, et al. "Decelerated Hot Carrier Cooling in Graphene via Nondissipative Carrier Injection from MoS2." ACS Nano 14, no. 10 (August 19, 2020): 13905–12. http://dx.doi.org/10.1021/acsnano.0c06311.

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31

Shen, Jingyu, Can Tan, Rui Jiang, Wei Li, Xue Fan, Jianjun Li, and Jingping Wu. "The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection." Advances in Condensed Matter Physics 2018 (May 20, 2018): 1–6. http://dx.doi.org/10.1155/2018/5483756.

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The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB) of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig) of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N) tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd) under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

32

Jang, Taejin, Myung-Hyun Baek, Min-Woo Kwon, Sungmin Hwang, Jeesoo Chang, Kyung Kyu Min, Kyungchul Park, and Byung-Gook Park. "Analysis of Hot Carrier Injection According to Gate Length." Journal of Nanoscience and Nanotechnology 19, no. 10 (October 1, 2019): 6746–49. http://dx.doi.org/10.1166/jnn.2019.17102.

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33

de Jong, Maurits J., Cora Salm, and Jurriaan Schmitz. "Recovery after hot-carrier injection: Slow versus fast traps." Microelectronics Reliability 100-101 (September 2019): 113318. http://dx.doi.org/10.1016/j.microrel.2019.06.010.

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34

Yang, Shao-Ming, Gene Sheu, Chiu-Chung Lai, and Ravi Deivasigamani. "Analysis of Anti-JFET for 600V VDMOS and HCI Reliability." MATEC Web of Conferences 201 (2018): 05001. http://dx.doi.org/10.1051/matecconf/201820105001.

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In VDMOS device the anti-JFET concentration has important role for determining the breakdown voltage and on-resistance of the device. Because higher N-drift doping concentration can provide the very best on-resistance of the device but also decrease breakdown voltage. It also has a proportional relationship with threshold voltage degradation. In this paper, we report the anti-JFET implantation energy influence effect electric potential distribution, the highest impact ionization shifted from the silicon surface to deeper. It will have less hot carrier impact, and we have found higher breakdown voltage. The anti-JEFT implantation is critical for on-resistance off-state breakdown voltage optimization, However the high field and high impact ionization near the gate region will cause severe hot carrier Injection problem. The general expectation of high voltage VDMOS transistor is to have higher breakdown voltage, less degradation due to hot carrier injection and better on-resistance.

35

Jiménez-López, Jesús, Bianka M. D. Puscher, Werther Cambarau, Rainer H. Fink, Emilio Palomares, and Dirk M. Guldi. "Hot electron injection into semiconducting polymers in polymer based-perovskite solar cells and their fate." Nanoscale 11, no. 48 (2019): 23357–65. http://dx.doi.org/10.1039/c9nr06297a.

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36

Wan, Xinggong. "Device Reliability Challenges in Advanced FinFET Technology." EDFA Technical Articles 21, no. 4 (November 1, 2019): 30–37. http://dx.doi.org/10.31399/asm.edfa.2019-4.p030.

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37

Kueing-Long Chen, S. A. Saller, I. A. Groves, and D. B. Scott. "Reliability Effects on MOS Transistors Due to Hot-Carrier Injection." IEEE Journal of Solid-State Circuits 20, no. 1 (February 1985): 306–13. http://dx.doi.org/10.1109/jssc.1985.1052307.

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38

Kueing-Long Chen, S. A. Saller, I. A. Groves, and D. B. Scott. "Reliability effects on MOS transistors due to hot-carrier injection." IEEE Transactions on Electron Devices 32, no. 2 (February 1985): 386–93. http://dx.doi.org/10.1109/t-ed.1985.21953.

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39

Elattari, B., P. Coppens, G. Van den bosch, P. Moens, and G. Groeseneken. "Breakdown and hot carrier injection in deep trench isolation structures." Solid-State Electronics 49, no. 8 (August 2005): 1370–75. http://dx.doi.org/10.1016/j.sse.2005.06.003.

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40

Kamal, Mehdi, Qing Xie, Massoud Pedram, Ali Afzali-Kusha, and Saeed Safari. "An efficient temperature dependent hot carrier injection reliability simulation flow." Microelectronics Reliability 57 (February 2016): 10–19. http://dx.doi.org/10.1016/j.microrel.2015.12.008.

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41

Pazos, S. M., F. L. Aguirre, F. Palumbo, and F. Silveira. "Hot-carrier-injection resilient RF power amplifier using adaptive bias." Microelectronics Reliability 114 (November 2020): 113912. http://dx.doi.org/10.1016/j.microrel.2020.113912.

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42

El Bitar, R., C. Salame, and P. Mialhe. "Hot carrier injection in VDMOSFET for improvement of commutation process." Microelectronics International 24, no. 3 (July 31, 2007): 60–65. http://dx.doi.org/10.1108/13565360710779217.

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43

Abdallah, Naoufel Ben, Pierre Degond, and Christian Schmeiser. "On a mathematical model for hot carrier injection in semiconductors." Mathematical Methods in the Applied Sciences 17, no. 15 (December 1994): 1193–212. http://dx.doi.org/10.1002/mma.1670171503.

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44

Chen, Shen Li, and Hsiao Kuang Yang. "A Hot-Carrier Damaged Indicator of MOSFETs by the Low Frequency Noise Measurement Technique." Advanced Materials Research 679 (April 2013): 89–94. http://dx.doi.org/10.4028/www.scientific.net/amr.679.89.

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In fact, the 1/f noise spectrum is correlated with the interface trap density of a MOSFET gate oxide, and the trap density generation in gate oxide is strong dependently on the hot-carrier injection. In this paper, we will investigate this phenomenon and compare with the threshold voltage shifted measured by the static I-V analysis. Eventually, it is found that the technique of the low frequency 1/f noise spectrum is an accurate and sensitive tool to detect the hot-carrier damage.

45

Liu, Yan, Yanhua Ma, Zhaojie Yu, Shanshan Lou, Yang Qu, and Yuchun Chang. "An Investigation into the Comprehensive Impact of Self-Heating and Hot Carrier Injection." Electronics 11, no. 17 (September 1, 2022): 2753. http://dx.doi.org/10.3390/electronics11172753.

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As the device feature size shrinks, the dissipation of power increases and further raises the carrier and lattice temperature, which finally affects device performance. In this paper, we analyze the comprehensive influence of the self-heating effect and hot carrier injection (HCI) using TCAD simulations. Based on the hydrodynamic and thermodynamic models, it is demonstrated that the thermal surface resistance had a positive impact on the carrier and lattice temperature and that the drain saturation current is reduced dramatically due to the self-heating effect. Moreover, the impact of HCI on device performance is discussed. Finally, it is concluded that the self-heating effect exacerbates the influence of HCI on device characteristics.

46

Dai, Mingzhi, Chao Gao, Kinleong Yap, Yi Shan, Zigui Cao, Kuangyang Liao, Liang Wang, Bo Cheng, and Shaohua Liu. "A Model With Temperature-Dependent Exponent for Hot-Carrier Injection in High-Voltage nMOSFETs Involving Hot-Hole Injection and Dispersion." IEEE Transactions on Electron Devices 55, no. 5 (May 2008): 1255–58. http://dx.doi.org/10.1109/ted.2008.919322.

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47

Ma, Lijuan, Xiaoli Ji, Zhaoxing Chen, Yiming Liao, Feng Yan, Yongliang Song, and Qiang Guo. "Physical understanding of hot carrier injection variability in deeply scaled nMOSFETs." Japanese Journal of Applied Physics 53, no. 4S (January 1, 2014): 04EC15. http://dx.doi.org/10.7567/jjap.53.04ec15.

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48

Choi, Byung Yong, Suk Kang Sung, Se Jun Park, Tae Hun Kim, Mincheol Kim, Se Hoon Lee, Min Jeong Kim, et al. "New Source/Drain Hot Carrier Injection Disturbance of NAND Flash Devices." Journal of the Korean Physical Society 56, no. 1 (January 15, 2010): 142–46. http://dx.doi.org/10.3938/jkps.56.142.

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49

Mingzhi Dai. "Lifetime Model for Advanced N-Channel Transistor Hot-Carrier-Injection Degradation." IEEE Electron Device Letters 31, no. 6 (June 2010): 525–27. http://dx.doi.org/10.1109/led.2010.2046392.

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50

Chen Yu-Zhang and Tang Ting-Wei. "Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET's." IEEE Transactions on Electron Devices 35, no. 12 (1988): 2180–88. http://dx.doi.org/10.1109/16.8792.

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