Готові списки джерел за темами / Scandium aluminum nitride (ScAlN)

Добірка наукової літератури з теми "Scandium aluminum nitride (ScAlN)"

Автор: Grafiati
Опубліковано: 13 квітня 2024

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  1. Статті в журналах
  2. Дисертації
  3. Частини книг
  4. Тези доповідей конференцій

Статті в журналах з теми "Scandium aluminum nitride (ScAlN)":

1

N. I .M. Nor, N. Khalid, H. Aris, M. S. Mispan, and N. Aiman Syahmi. "Analysis of Different Piezoelectric Materials on the Film Bulk Acoustic Wave Resonator." International Journal of Nanoelectronics and Materials (IJNeaM) 16, DECEMBER (December 26, 2023): 121–30. http://dx.doi.org/10.58915/ijneam.v16idecember.398.

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Анотація:
The performance of film bulk acoustic wave resonators (FBAR) is greatly dependent on the choice of piezoelectric materials. Different piezoelectric materials have distinct properties that can impact the performance of FBAR. Hence, this work presents the analysis of three different piezoelectric materials which are aluminum nitride (AlN), scandium aluminum nitride (ScAlN) and zinc oxide (ZnO) on the performance of FBARs working at resonance frequencies of 6 GHz until 10 GHz. The one-dimensional (1-D) modelling is implemented to characterize the effects of these materials on the quality (Q) factor, electromechanical coupling coefficient (k2eff) and bandwidth (BW). It is determined that employing ScAlN in FBAR results in the highest Q factor, ranges from 628 to 1047 while maintaining a relatively compact area (25 µm × 25 µm) and thickness (430 nm to 720 nm). However, ScAlN yields the narrowest BW, measuring 0.11 GHz at 6 GHz, as opposed to AlN and ZnO, which exhibit broader bandwidths of 0.16 GHz and 0.23 GHz, respectively.
2

Hähnlein, Bernd, Tim Hofmann, Katja Tonisch, Jörg Pezoldt, Jaroslav Kovac, and Stefan Krischok. "Structural Analysis of Sputtered Sc(x)Al(1-x)N Layers for Sensor Applications." Key Engineering Materials 865 (September 2020): 13–18. http://dx.doi.org/10.4028/www.scientific.net/kem.865.13.

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Анотація:
Scandium aluminum nitride (ScxAl1-xN) is a promising material for sensor applications as it exhibits enhanced piezoelectric properties compared to pristine AlN while maintaining other advantageous properties like high thermal stability. Magnetoelectric sensors in particular are used to detect magnetic fields which leads to special requirements regarding the investigated ScAlN in order to achieve high sensor sensitivities. Co-sputtered ScAlN layers are investigated in this work using XRD, XPS, FTIR and Raman spectroscopy for scandium concentrations from 0 to 34 %. The impact of Sc incorporation regarding residual biaxial strain and bond softening is discussed on basis of the experimental results. The activity of the B1 and E2 modes found in the FTIR measurements is of special interest as the presumably oxygen related excitation is expected to influence the piezoelectric properties.
3

Zhang, Qiaozhen, Mingzhu Chen, Huiling Liu, Xiangyong Zhao, Xiaomei Qin, Feifei Wang, Yanxue Tang, Keat Hoe Yeoh, Khian-Hooi Chew, and Xiaojuan Sun. "Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices." Materials 14, no. 21 (October 27, 2021): 6437. http://dx.doi.org/10.3390/ma14216437.

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Анотація:
In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device’s relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to characterize the Sc0.29Al0.71N thin film grown using pulsed DC magnetron sputtering. Crystal structure modeling of the ScAlN thin film is proposed and validated, and the structure–property relations are discussed. The investigation results indicated that the sputtered thin film using seed layer technique had a good crystalline quality and a clear grain boundary. In addition, the effective piezoelectric coefficient d33 was up to 12.6 pC/N, and there was no wurtzite-to-rocksalt phase transition under high pressure. These good features demonstrated that the sputtered ScAlN is promising for application in high-coupling piezoelectric devices with high-pressure stability.
4

Wei, Min, Yan Liu, Yuanhang Qu, Xiyu Gu, Yilin Wang, Wenjuan Liu, Yao Cai, Shishang Guo, and Chengliang Sun. "Development of Temperature Sensor Based on AlN/ScAlN SAW Resonators." Electronics 12, no. 18 (September 12, 2023): 3863. http://dx.doi.org/10.3390/electronics12183863.

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Анотація:
Temperature monitoring in extreme environments presents new challenges for MEMS sensors. Since aluminum nitride (AlN)/scandium aluminum nitride (ScAlN)-based surface acoustic wave (SAW) devices have a high Q-value, good temperature drift characteristics, and the ability to be compatible with CMOS, they have become some of the preferred devices for wireless passive temperature measurement. This paper presents the development of AlN/ScAlN SAW-based temperature sensors. Three methods were used to characterize the temperature characteristics of a thin-film SAW resonator, including direct measurement by GSG probe station, and indirect measurement by oscillation circuit and antenna. The temperature characteristics of the three methods in the range of 30–100 °C were studied. The experimental results show that the sensitivities obtained with the three schemes were −28.9 ppm/K, −33.6 ppm/K, and −29.3 ppm/K. The temperature sensor using the direct measurement method had the best linearity, with a value of 0.0019%, and highest accuracy at ±0.70 °C. Although there were differences in performance, the characteristics of the three SAW temperature sensors make them suitable for sensing in various complex environments.
5

Li, Minghua, Huamao Lin, Kan Hu, and Yao Zhu. "Oxide overlayer formation on sputtered ScAlN film exposed to air." Applied Physics Letters 121, no. 11 (September 12, 2022): 111602. http://dx.doi.org/10.1063/5.0106717.

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Анотація:
There has been much interest in developing scandium doped aluminum nitride (ScAlN) thin films for use in electronic devices, due to their excellent piezoMEMS response, large spontaneous polarization, and the capability for CMOS-compatible integration. As with the undoped AlN film, the formation of an oxide overlayer on the air-exposed ScAlN film can modulate its surface structure and the electrical properties. In this study, we investigate the effects of surface oxidation on a ScAlN film by characterizing the film microstructure and the elemental chemical states. We found that amorphous phase and small crystallites co-exist in the oxide overlayer, which is remarkably different from the columnar (0002) crystalline texture in the bulk ScAlN film. X-ray photoelectron spectroscopy core-level analyses confirm the formation of Al–O and Sc–O bonds. Moreover, the valence band maximum of the oxide overlayer shifts toward a higher binding energy, indicating a high energy barrier at the ScAlN/metal interface. Our results suggest that ScAlN surface oxidation is a chemical reaction-driven and self-limited process.
6

Zhang, Yuchao, Bin Miao, Guanghua Wang, Hongyu Zhou, Shiqin Zhang, Yimin Hu, Junfeng Wu, Xuechao Yu, and Jiadong Li. "ScAlN Film-Based Piezoelectric Micromechanical Ultrasonic Transducers with Dual-Ring Structure for Distance Sensing." Micromachines 14, no. 3 (February 23, 2023): 516. http://dx.doi.org/10.3390/mi14030516.

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Piezoelectric micromechanical ultrasonic transducers (pMUTs) are new types of distance sensors with great potential for applications in automotive, unmanned aerial vehicle, robotics, and smart homes. However, previously reported pMUTs are limited by a short sensing distance due to lower output sound pressure. In this work, a pMUT with a special dual-ring structure based on scandium-doped aluminum nitride (ScAlN) is proposed. The combination of a dual-ring structure with pinned boundary conditions and a high piezoelectric performance ScAlN film allows the pMUT to achieve a large dynamic displacement of 2.87 μm/V and a high electromechanical coupling coefficient (kt2) of 8.92%. The results of ranging experiments show that a single pMUT achieves a distance sensing of 6 m at a resonant frequency of 91 kHz, the farthest distance sensing registered to date. This pMUT provides surprisingly fertile ground for various distance sensing applications.
7

Tominaga, Takumi, Shinji Takayanagi, and Takahiko Yanagitani. "Negative-ion bombardment increases during low-pressure sputtering deposition and their effects on the crystallinities and piezoelectric properties of scandium aluminum nitride films." Journal of Physics D: Applied Physics 55, no. 10 (December 9, 2021): 105306. http://dx.doi.org/10.1088/1361-6463/ac3d5c.

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Abstract Scandium aluminum nitride (ScAlN) films are being actively researched to explore their potential for use in bulk acoustic wave and surface acoustic wave resonators because of their good piezoelectric properties. Sputtering is commonly used in ScAlN film deposition. Unfortunately, it has been reported that film quality metrics such as the crystallinity and piezoelectric properties can deteriorate before the Sc concentration reaches 43% without an isostructural phase transition. One reason for this is bombardment with negative ions generated from carbon and oxygen impurities in the Sc ingots. Because the number of negative ions increases during low-pressure sputtering deposition, their effect on film quality may be considerable. In this study, we investigated negative-ion bombardment of the substrate during sputtering deposition and its effects on ScAlN crystallinity and piezoelectric properties. Negative-ion energy distribution measurements indicated that many more negative ions collide with the substrate during ScAlN film deposition than during AlN deposition. In addition, decreasing the sputtering pressure further increased the number of negative ions and their energies. It is well known that film quality improves at low pressures because increasing the mean free path reduces thermalization and scattering of sputtered particles. Although, AlN crystallinity and piezoelectric properties improved at low pressures, the properties of ScAlN films deteriorated dramatically. Therefore, the results indicated that ion bombardment increase at low pressure adversely effects ScAlN crystal growth, deteriorating crystallinity and piezoelectric properties. ScAlN films may be improved further by suppressing negative-ion bombardment of the substrate.
8

Liu, Xiaonan, Qiaozhen Zhang, Mingzhu Chen, Yaqi Liu, Jianqiu Zhu, Jiye Yang, Feifei Wang, Yanxue Tang, and Xiangyong Zhao. "Multiphysics Modeling and Analysis of Sc-Doped AlN Thin Film Based Piezoelectric Micromachined Ultrasonic Transducer by Finite Element Method." Micromachines 14, no. 10 (October 18, 2023): 1942. http://dx.doi.org/10.3390/mi14101942.

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This paper presents a Piezoelectric micromechanical ultrasonic transducer (PMUT) based on a Pt/ScAlN/Mo/SiO2/Si/SiO2/Si multilayer structure with a circular suspension film of scandium doped aluminum nitride (ScAlN). Multiphysics modeling using the finite element method and analysis of the effect of different Sc doping concentrations on the resonant frequency, the effective electromechanical coupling coefficient (keff2) and the station sensitivity of the PMUT cell are performed. The calculation results show that the resonant frequency of the ScAlN-based PMUT can be above 20 MHz and its keff2 monotonically rise with the increasing doping concentrations in ScAlN. In comparison to the pure AlN thin film-based PMUT, the static receiving sensitivity of the PMUT based on ScAlN thin film with 35% Sc doping concentration is up to 1.61 mV/kPa. Meanwhile, the static transmitting sensitivity of the PMUT is improved by 152.95 pm/V. Furthermore, the relative pulse-echo sensitivity level of the 2 × 2 PMUT array based on the Sc doping concentration of 35% AlN film is improved by 16 dB compared with that of the cell with the same Sc concentration. The investigation results demonstrate that the performance of PMUT on the proposed structure can be tunable and enhanced by a reasonable choice of the Sc doping concentration in ScAlN films and structure optimization, which provides important guidelines for the design of PMUT for practical applications.
9

Ji, Meilin, Haolin Yang, Yongxin Zhou, Xueying Xiu, Haochen Lv, and Songsong Zhang. "Bimorph Dual-Electrode ScAlN PMUT with Two Terminal Connections." Micromachines 13, no. 12 (December 19, 2022): 2260. http://dx.doi.org/10.3390/mi13122260.

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Анотація:
This paper presents a novel bimorph Piezoelectric Micromachined Ultrasonic Transducer (PMUT) fabricated with 8-inch standard CMOS-compatible processes. The bimorph structure consists of two layers of 20% scandium-doped aluminum nitride (Sc0.2Al0.8N) thin films, which are sandwiched among three molybdenum (Mo) layers. All three Mo layers are segmented to form the outer ring and inner plate electrodes. Both top and bottom electrodes on the outer ring are electrically linked to the center inner plate electrodes. Likewise, the top and bottom center plate electrodes are electrically connected to the outer ring in the same fashion. This electrical configuration maximizes the effective area of the given PMUT design and improves efficiency during the electromechanical coupling process. In addition, the proposed bimorph structure further simplifies the device’s electrical layout with only two-terminal connections as reported in many conventional unimorph PMUTs. The mechanical and acoustic measurements are conducted to verify the device’s performance improvement. The dynamic mechanical displacement and acoustic output under a low driving voltage (1 Vpp) are more than twice that reported from conventional unimorph devices with a similar resonant frequency. Moreover, the pulse-echo experiments indicate an improved receiving voltage of 10 mV in comparison with the unimorph counterpart (4.8 mV). The validation of device advancement in the electromechanical coupling effect by using highly doped ScAlN thin film, the realization of the proposed bimorph PMUT on an 8-inch wafer paves the path to production of next generation, high-performance piezoelectric MEMS.
10

Stoeckel, Chris, Katja Meinel, Marcel Melzer, Agnė Žukauskaitė, Sven Zimmermann, Roman Forke, Karla Hiller, and Harald Kuhn. "Static High Voltage Actuation of Piezoelectric AlN and AlScN Based Scanning Micromirrors." Micromachines 13, no. 4 (April 15, 2022): 625. http://dx.doi.org/10.3390/mi13040625.

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Piezoelectric micromirrors with aluminum nitride (AlN) and aluminum scandium nitride (Al0.68Sc0.32N) are presented and compared regarding their static deflection. Two chip designs with 2 × 3 mm2 (Design 1) and 4 × 6 mm2 (Design 2) footprint with 600 nm AlN or 2000 nm Al0.68Sc0.32N as piezoelectric transducer material are investigated. The chip with Design 1 and Al0.68Sc0.32N has a resonance frequency of 1.8 kHz and a static scan angle of 38.4° at 400 V DC was measured. Design 2 has its resonance at 2.1 kHz. The maximum static scan angle is 55.6° at 220 V DC, which is the maximum deflection measurable with the experimental setup. The static deflection per electric field is increased by a factor of 10, due to the optimization of the design and the research and development of high-performance piezoelectric transducer materials with large piezoelectric coefficient and high electrical breakthrough voltage.
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Статті в журналах

Дисертації з теми "Scandium aluminum nitride (ScAlN)":

1

Moreira, Milena De Albuquerque. "Synthesis of Thin Piezoelectric AlN Films in View of Sensors and Telecom Applications." Doctoral thesis, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-229588.

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The requirements of the consumer market on high frequency devices have been more and more demanding over the last decades. Thus, a continuing enhancement of the devices’ performance is required in order to meet these demands. In a macro view, changing the design of the device can result in an improvement of its performance. In a micro view, the physical properties of the device materials have a strong influence on its final performance. In the case of high frequency devices based on piezoelectric materials, a natural way to improve their performance is through the improvement of the properties of the piezoelectric layer. The piezoelectric material studied in this work is AlN, which is an outstanding material among other piezoelectric materials due to its unique combination of material properties. This thesis presents results from experimental studies on the synthesis of AlN thin films in view of telecom, microelectronic and sensor applications. The main objective of the thesis is to custom design the functional properties of AlN to best suit these for the specific application in mind. This is achieved through careful control of the crystallographic structure and texture as well as film composition. The piezoelectric properties of AlN films were enhanced by doping with Sc. Films with different Sc concentrations were fabricated and analyzed, and the coupling coefficient (kt2) was enhanced a factor of two by adding 15% of Sc to the AlN films. The enhancement of kt2 is of interest since it can contribute to a more relaxed design of high frequency devices. Further, in order to obtain better deposition control of c-axis tilted AlN films, a new experimental setup were proposed. When this novel setup was used, films with well-defined thicknesses and tilt uniformity were achieved. Films with such characteristics are very favorable to use in sensors based on electroacoustic devices operating in viscous media. Studies were also performed in order to obtain c-axis oriented AlN films deposited directly on Si substrates at reduced temperatures. The deposition technique used was HiPIMS, and the results indicated significant improvements in the film texture when comparing to the conventional Pulsed DC deposition process.

Частини книг з теми "Scandium aluminum nitride (ScAlN)":

1

Casamento, Joseph, John Hayden, Susan Trolier-McKinstry, Jon-Paul Maria, Thai-Son Nguyen, Kazuki Nomoto, Huili (Grace) Xing, and Debdeep Jena. "Toward new ferroelectric nitride materials and devices: Aluminum boron nitride and aluminum scandium nitride ferroelectric high electron mobility transistors (FerroHEMTs)." In Semiconductors and Semimetals. Elsevier, 2023. http://dx.doi.org/10.1016/bs.semsem.2023.09.016.

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Тези доповідей конференцій з теми "Scandium aluminum nitride (ScAlN)":

1

Mishin, Sergey, and Yury Oshmyansky. "Optimizing high concentration Scandium Aluminum Nitride films." In 2023 IEEE International Ultrasonics Symposium (IUS). IEEE, 2023. http://dx.doi.org/10.1109/ius51837.2023.10308061.

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2

Li, Nanxi, Wing Wai Chung, Jia Sheng Goh, Yat Fung Tsang, Landobasa Y. M. Tobing, Chong Pei Ho, Binni Varghese, et al. "Scandium-doped aluminum nitride photonic integration platform." In Integrated Optics: Devices, Materials, and Technologies XXVIII, edited by Sonia M. García-Blanco and Pavel Cheben. SPIE, 2024. http://dx.doi.org/10.1117/12.3004598.

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3

Lozzi, Andrea, Marco Liffredo, Ernest Tin-Ta Yen, Jeronimo Segovia-Fernandez, and Luis Guillermo Villanueva. "Phase Noise Measurements of Aluminum Scandium Nitride Oscillators." In 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII). IEEE, 2019. http://dx.doi.org/10.1109/transducers.2019.8808738.

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4

Shao, Shuai, Zhifang Luo, and Tao Wu. "Sub-6dB Aluminum Scandium Nitride Acoustic Delay Lines." In 2022 IEEE International Ultrasonics Symposium (IUS). IEEE, 2022. http://dx.doi.org/10.1109/ius54386.2022.9958371.

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5

Zhang, Xiangchao, Shaonan Zheng, Qize Zhong, Lianxi Jia, Zhengji Xu, Yuan Dong, Ting Hu, and Yuandong Gu. "Aluminum scandium nitride waveguide in the near-infrared." In 13th International Photonics and OptoElectronics Meetings (POEM 2021), edited by Xinliang Zhang, Perry Shum, and Jianji Dong. SPIE, 2022. http://dx.doi.org/10.1117/12.2626712.

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6

Liu, Jiangnan, Anshuman Singh, Ping Wang, Ding Wang, Walter Shin, Mackillo Kira, Moe Soltani, and Zetian Mi. "Quantum-relevant optical nonlinearity in aluminum nitride." In CLEO: Science and Innovations. Washington, D.C.: Optica Publishing Group, 2023. http://dx.doi.org/10.1364/cleo_si.2023.stu3n.4.

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Record-high electro-optic coefficient in thin-film AIN is demonstrated by introducing Al0.75Ga0.25N multiple quantum-wells. Ferroelectricity is reached with novel ScAlN quantum structures, developed to enhance (2) nonlinearity toward quantum relevance.
7

Kusano, Yuri, Guo-Lun Luo, David Horsley, I. taru Ishii, and Akihiko Teshigahara. "36% Scandium-Doped Aluminum Nitride Piezoelectric Micromachined Ultrasonic Transducers." In 2018 IEEE International Ultrasonics Symposium (IUS). IEEE, 2018. http://dx.doi.org/10.1109/ultsym.2018.8579694.

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8

Mishin, Sergey, and Yury Oshmyansky. "Stress Control for Highly Doped Aluminum Scandium Nitride Films." In 2018 IEEE International Ultrasonics Symposium (IUS). IEEE, 2018. http://dx.doi.org/10.1109/ultsym.2018.8579889.

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9

Wang, Q., Y. Lu, S. Fung, X. Jiang, S. Mishin, Y. Oshmyansky, and D. A. Horsley. "SCANDIUM DOPED ALUMINUM NITRIDE BASED PIEZOELECTRIC MICROMACHINED ULTRASOUND TRANSDUCERS." In 2016 Solid-State, Actuators, and Microsystems Workshop. San Diego: Transducer Research Foundation, 2016. http://dx.doi.org/10.31438/trf.hh2016.116.

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10

Wang, Jialin, Mingyo Park, and Azadeh Ansari. "Thermal Characterization of Ferroelectric Aluminum Scandium Nitride Acoustic Resonators." In 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS). IEEE, 2021. http://dx.doi.org/10.1109/mems51782.2021.9375203.

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