Relevant bibliographies by topics / 22~nm

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic '22~nm'

Author: Grafiati
Published: 25 May 2024
Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic '22~nm.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "22~nm"

1

Bloomstein, T. M., Michael F. Marchant, Sandra Deneault, Dennis E. Hardy, and Mordechai Rothschild. "22-nm immersion interference lithography." Optics Express 14, no. 14 (2006): 6434. http://dx.doi.org/10.1364/oe.14.006434.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Sadana, Devendra, Stephen W. Bedell, J. P. De Souza, et al. "CMOS Scaling Beyond 22 nm Node." ECS Transactions 19, no. 5 (2019): 267–74. http://dx.doi.org/10.1149/1.3119551.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Buengener, Ralf, Carol Boye, Bryan N. Rhoads, et al. "Process Window Centering for 22 nm Lithography." IEEE Transactions on Semiconductor Manufacturing 24, no. 2 (2011): 165–72. http://dx.doi.org/10.1109/tsm.2011.2106807.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Parker, Matthew. "A sub-terahertz transceiver in 22 nm FinFET." Nature Electronics 5, no. 3 (2022): 126. http://dx.doi.org/10.1038/s41928-022-00741-x.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Kurd, Nasser, Muntaquim Chowdhury, Edward Burton, et al. "Haswell: A Family of IA 22 nm Processors." IEEE Journal of Solid-State Circuits 50, no. 1 (2015): 49–58. http://dx.doi.org/10.1109/jssc.2014.2368126.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Huang, Ru, HanMing Wu, JinFeng Kang, et al. "Challenges of 22 nm and beyond CMOS technology." Science in China Series F: Information Sciences 52, no. 9 (2009): 1491–533. http://dx.doi.org/10.1007/s11432-009-0167-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Shiotani, Hideaki, Shota Suzuki, Dong Gun Lee, et al. "Dual Grating Interferometric Lithography for 22-nm Node." Japanese Journal of Applied Physics 47, no. 6 (2008): 4881–85. http://dx.doi.org/10.1143/jjap.47.4881.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Li, Zongru, Christopher Jarrett Elash, Chen Jin, et al. "Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies." Electronics 11, no. 11 (2022): 1757. http://dx.doi.org/10.3390/electronics11111757.

Full text
Abstract:
Total ionizing dose (TID) effects from Co-60 gamma ray and heavy ion irradiation were studied at the 22-nm FD SOI technology node and compared with the testing results from the 28-nm FD SOI technology. Ring oscillators (RO) designed with inverters, NAND2, and NOR2 gates were used to observe the output frequency drift and current draw. Experimental results show a noticeable increased device current draw and decreases in RO frequencies where NOR2 ROs have the most degradation. As well, the functionality of a 256 kb SRAM block and shift-register chains were evaluated during C0-60 irradiation. SRA
APA, Harvard, Vancouver, ISO, and other styles
9

Seifert, N., B. Gill, S. Jahinuzzaman, et al. "Soft Error Susceptibilities of 22 nm Tri-Gate Devices." IEEE Transactions on Nuclear Science 59, no. 6 (2012): 2666–73. http://dx.doi.org/10.1109/tns.2012.2218128.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Zhang, Bo, Min Zhang, and Tianhong Cui. "Low-cost shrink lithography with sub-22 nm resolution." Applied Physics Letters 100, no. 13 (2012): 133113. http://dx.doi.org/10.1063/1.3697836.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "22~nm"

1

Bansal, Anil Kumar. "CMOS scaling considerations in sub 10-nm node multiple-gate FETS." Thesis, IIT Delhi, 2019. http://eprint.iitd.ac.in:80//handle/2074/8046.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Baldauf, Tim. "Integration von Multi-Gate-Transistoren auf Basis einer 22 nm-Technologie." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-132044.

Full text
Abstract:
Die kontinuierliche Skalierung der planaren MOSFETs war in den vergangenen 40 Jahren der Schlüssel, um die Bauelemente immer kleiner und leistungsfähiger zu gestalten. Hinzu kamen Techniken zur mechanischen Verspannung, Verfahren zur Kurzzeitausheilung, die in-situ-dotierte Epitaxie und neue Materialien, wie das High-k-Gateoxid in Verbindung mit Titannitrid als Gatemetall. Jedoch erschwerten Kurzkanaleffekte und eine zunehmende Streuung der elektrischen Eigenschaften die Verkleinerung der planaren Transistoren erheblich. Somit gelangten die planaren MOSFETs mit der aktuellen 28 nm-Technologie
APA, Harvard, Vancouver, ISO, and other styles
3

Hamioud, Karim. "Élaboration et caractérisation des interconnexions pour les nœuds technologiques CMOS 32 et 22 nm." Lyon, INSA, 2010. http://www.theses.fr/2010ISAL0011.

Full text
Abstract:
Les performances globales des circuits intégrés doivent augmenter d’environ 20 % à chaque nouvelle génération technologique. Les interconnexions constituant ces circuits ces circuits doivent participer à l’augmentation de ces performances et plus particulièrement à la réduction du temps de propagation des signaux. L’utilisation de diélectrique poreux à très faible permittivité est nécessaire pour les générations sub-45 nm. Dans un premier temps, une feuille de route pour une filière BEOL 32 nm performante est proposée. Les développements de procédés élémentaires ont permis de démontrer la fonc
APA, Harvard, Vancouver, ISO, and other styles
4

Öberg, Eric, та Gustav Kindeskog. "16 GS/s Continuous-Time ΣΔ Modulator in a 22 nm SOI Process : a Simulation and Feasibility Study". Thesis, Linköpings universitet, Tekniska fakulteten, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-155781.

Full text
Abstract:
With a reference specification model in terms of 8 GS/s Sigma Delta Modulator in a 28 nm CMOS process consuming 890 mW, the purpose with this thesis is to construct a similar and simpler model but with higher specification demands. In a 22 nm SOI process with an input signal bandwidth of 500 MHz sampled at 16 GS/s with a power consumption below 2 W, the objective is to design a Continuous-Time Sigma Delta Modulator with verified simulated functionality on a transistor level basis. This specification is accomplished - with a power consumption in total of 75 mW. The design methodology is divided
APA, Harvard, Vancouver, ISO, and other styles
5

Bauer, Heiner. "Dynamic instruction set extension of microprocessors with embedded FPGAs." Master's thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-222858.

Full text
Abstract:
Increasingly complex applications and recent shifts in technology scaling have created a large demand for microprocessors which can perform tasks more quickly and more energy efficient. Conventional microarchitectures exploit multiple levels of parallelism to increase instruction throughput and use application specific instruction sets or hardware accelerators to increase energy efficiency. Reconfigurable microprocessors adopt the same principle of providing application specific hardware, however, with the significant advantage of post-fabrication flexibility. Not only does this offer similar
APA, Harvard, Vancouver, ISO, and other styles
6

Baldauf, Tim [Verfasser], Gerald [Akademischer Betreuer] Gerlach, and Roland [Akademischer Betreuer] Stenzel. "Integration von Multi-Gate-Transistoren auf Basis einer 22 nm-Technologie / Tim Baldauf. Gutachter: Gerald Gerlach ; Roland Stenzel. Betreuer: Gerald Gerlach ; Roland Stenzel." Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://d-nb.info/1068444916/34.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Delpeyroux, Francis. "Insertions dans l'antigène de surface du virus de l'hépatite B expression d'un épitote de neutralisation du poliovirus à la surface departicules de 22 nm." Grenoble : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37593763m.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Delpeyroux, Francis. "Insertions dans l'antigene de surface du virus de l'hepatite b : expression d'un epitope de neutralisation du poliovirus a la surface de particules de 22 nm." Paris 7, 1987. http://www.theses.fr/1987PA077198.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Lecat-Mathieu, de Boissac Capucine. "Developing radiation-hardening solutions for high-performance and low-power systems." Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0413.

Full text
Abstract:
De nouveaux acteurs industriels déploient de larges constellations de satellites, tandis que d'autres domaines comme l'industrie automobile développent des systèmes robustes. Ces systèmes s'appuient sur des technologies avancées, telles que le UTBB FD-SOI, afin d'atteindre les performances nécessaires. La complexité et la vitesse croissantes des systèmes nécessitent une caractérisation précise de ces technologies, ainsi qu'une adaptation des techniques traditionnelles de durcissement. L'objectif est l'étude des effets des radiations dans les technologies FD-SOI et bulk, ainsi que la recherche
APA, Harvard, Vancouver, ISO, and other styles
10

Lallement, Guénolé. "Extension of socs mission capabilities by offering near-zero-power performances and enabling continuous functionality for Iot systems." Electronic Thesis or Diss., Aix-Marseille, 2019. http://www.theses.fr/2019AIXM0573.

Full text
Abstract:
Les développements récents dans le domaine des circuits intégrés (IC) à basse tension ont ouvert la voie à des dispositifs électroniques économes en énergie dans un réseau mondial en plein essor appelé l’internet des objets (IoT) ou l’internet des choses (IoE). Cependant, la durabilité de tous ces capteurs interconnectés est compromise par le besoin constant d’une batterie embarquée – qui doit être rechargée ou remplacée – ou d’un récupérateur d’énergie à rendement très limité. La consommation d’énergie des systèmes électroniques grand public actuels est en effet cinquante fois plus élevée que
APA, Harvard, Vancouver, ISO, and other styles

Books on the topic "22~nm"

1

IEEE, International Nonvolatile Memory Technology Conference (7th 1998 Albuquerque New Mexico). Seventh biennial IEEE Nonvolatile Memory Technology Conference: Proceedings : 1998 conference : June 22-24, 1998, Albuquerque, NM, USA. IEEE, 1998.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Wang, Guilei. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0046-6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

IEEE Geoscience and Remote Sensing Society., Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers), and IEEE Microwave Theory and Techniques Society., eds. Topical Symposium on Combined Optical-microwave Earth and Atmosphere Sensing: Conference proceedings, March 22-25, 1993, Albuquerque, NM. Institute of Electrical and Electronics Engineers, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Symposium, on Time-of-Flight Diffraction at Pulsed Neutron Sources (1993 Albuquerque N. M. ). Proceedings of the Symposium on Time-of-Flight Diffraction at Pulsed Neutron Sources: At Albuquerque Convention Center, Albuquerque, NM, May 22-28, 1993. American Crystallographic Association, 1994.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Center for Nonlinear Studies. International Conference. Nonlinearity in materials science: Proceedings of the twelfth annual International Conference of the Center for Nonlinear Studies, Los Alamos, NM 87545, USA, 18-22 May 1992. Edited by Bishop Alan, Ecke R, and Gubernatis James. North-Holland, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Center of Nonlinear Studies. International Conference. Nonlinearity in biology and medicine: Proceedings of theseventh annual international conference of the Center for Nonlinear Studies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA, May 18-22, 1987. Edited by Perelson Alan S. Elsevier, 1988.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

Labor, United States Congress House Committee on Education and. Civil Rights Restoration Act of 1985: Joint hearings before the Committee on Education and Labor, and the Subcommittee on Civil and Constitutional Rights of the Committee on the Judiciary, House of Representatives, Ninety-ninth Congress, first session on H.R. 700 ... hearings held in Philadelphia, PA, March 4; Washington, DC, March 7, 27, 28, and April 2; Atlanta, GA, March 11; Chicago, Il, March 15; Los Angeles, CA, March 22; and Santa Fe, NM, March 25, 1985. U.S. G.P.O., 1986.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

Balasinski, Artur. Design for Manufacturability: From 1d to 4D for 90 22 NM Technology Nodes. Springer New York, 2016.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

Balasinski, Artur. Design for Manufacturability: From 1D to 4D for 90–22 nm Technology Nodes. Springer, 2013.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

Balasinski, Artur. Design for Manufacturability: From 1D to 4D for 90-22 Nm Technology Nodes. Springer London, Limited, 2013.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "22~nm"

1

Vasudeva, G., P. Y. Mallikarjun, Mandar Jatkar, et al. "Design of OPAMP Based on 22 nm FinFET Technology." In Lecture Notes in Networks and Systems. Springer Nature Singapore, 2025. https://doi.org/10.1007/978-981-96-0185-1_32.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Valasa, Sresta, and Shubham Tayal. "Modeling and Analysis of Low Power High-Speed Phase Detector and Phase Frequency Detector Using Nano Dimensional MOS Transistors at 16 nm, 22 nm, 32 nm." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-6780-1_1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Poiroux, T., F. Andrieu, O. Weber, et al. "Ultrathin Body Silicon on Insulator Transistors for 22 nm Node and Beyond." In Semiconductor-On-Insulator Materials for Nanoelectronics Applications. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-15868-1_8.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Delwar, Tahesin Samira, Sourav Biswas, and Anindya Jana. "Realization of hybrid single electron transistor based low power circuits in 22 nm technology." In Computational Science and Engineering. CRC Press, 2016. http://dx.doi.org/10.1201/9781315375021-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Roy, Chandramuleswar. "Stability Aware Low-Power 8 T SRAM Cell Using CNFET in 22 nm Technology." In Advances in Energy and Control Systems. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-0154-4_7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Imtiaz, Shamim, and Ruqaiya Khanam. "Design and Analysis Delay of FinFET and CMOS 6T SRAM Using 22 nm Technology." In Studies in Autonomic, Data-driven and Industrial Computing. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-5435-3_32.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Cordova, David, Wim Cops, Yann Deval, et al. "Low-Power High-Speed ADCs for ADC-Based Wireline Receivers in 22 nm FDSOI." In VLSI-SoC: Design Trends. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-81641-4_1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Prouvée, J., G. Mangraviti, B. Debaillie, et al. "Digital Beamforming Transceiver Design in 22 nm FD-SOI Technology for 39 GHz 5G Access." In Technologies Enabling Future Mobile Connectivity & Sensing. River Publishers, 2023. http://dx.doi.org/10.1201/9781032633039-4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Kannaujiya, Aryan, Narendra Yadava, Mangal Deep Gupta, and Rajeev Kumar Chauhan. "Improvement of Leakage Current in Double Pocket FDSOI 22 nm Transistor Using Gate Metal Arrangement." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0312-0_23.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Vasudeva, G., and B. V. Uma. "Two-Stage Folded Resistive String 12-Bit Digital to Analog Converter Using 22-nm FINFET." In Sustainable Communication Networks and Application. Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-6605-6_8.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "22~nm"

1

Mulaosmanovic, H., H. S. Chen, A. Derrickson, et al. "SiGe HBT integrated in a 22 nm FDSOI." In 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732195.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Bakker, Jelle H. T., Marcin Ł. Motycki, Ray J. E. Hueting, and Mark S. Oude Alink. "Electrical and Optical Characterisation of Gateless 22 nm FDSOI PIN-Diodes at 850 nm." In 2024 IEEE European Solid-State Electronics Research Conference (ESSERC). IEEE, 2024. http://dx.doi.org/10.1109/esserc62670.2024.10719482.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

David, J.-B., A. Siligaris, J. Prouvée, B. Martineau, M. Zarudniev, and J. L. González-Jiménez. "A 22-nm FDSOI 35-41 GHz Frequency Synthesizer." In 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732855.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Li, Mingze, Guoxiang Shu, Siyuan Liu, et al. "A 40GHz Frequency Doubler with 22-nm CMOS SOI Process." In 2024 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC). IEEE, 2024. https://doi.org/10.1109/csrswtc64338.2024.10811538.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Lasserre, V., F. Stapelfeldt, S. Koop-Brinkmann, M. Dimić, F. Padovan, and V. Issakov. "A 126 – 137 GHz Regenerative Frequency Shifter in 22 nm FDSOI." In 2025 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, 2025. https://doi.org/10.1109/rfic61188.2025.11082973.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Scheller, Kai, Andre Engelmann, Philip Hetterle, Robert Weigel, Albert-Marcel Schrotz, and Georg Fischer. "A Broadband Sub-THz Push-Push Frequency Doubler in 22 nm FDSOI." In 2025 IEEE MTT-S Latin America Microwave Conference (LAMC). IEEE, 2025. https://doi.org/10.1109/lamc63321.2025.10880553.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Hashem, Abdelhameed, Mohamed Mobarak, and Mohamed A. Y. Abdalla. "A 60–90 GHz Passive Mixer-First Receiver in 22-nm SOI CMOS." In 2024 23rd International Symposium on Communications and Information Technologies (ISCIT). IEEE, 2024. https://doi.org/10.1109/iscit63075.2024.10793698.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Bakker, Jelle H. T., Mark S. Oude Alink, Jurriaan Schmitz, and Bram Nauta. "Characterisation of Photodiodes in 22 nm FDSOI at 850 nm." In ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC). IEEE, 2023. http://dx.doi.org/10.1109/essderc59256.2023.10268483.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Buengener, Ralf, Carol Boye, Bryan N. Rhoads, et al. "Process Window Centering for 22 nm lithography." In 2010 21st Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC). IEEE, 2010. http://dx.doi.org/10.1109/asmc.2010.5551447.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Seo, Soon-Cheon, Chih-Chao Yang, Chun-Chen Yeh, et al. "Copper contact metallization for 22 nm and beyond." In 2009 IEEE International Interconnect Technology Conference - IITC. IEEE, 2009. http://dx.doi.org/10.1109/iitc.2009.5090326.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "22~nm"

1

Becher, Julie, Samuel Beal, Susan Taylor, Katerina Dontsova, and Dean Wilcox. Photo-transformation of aqueous nitroguanidine and 3-nitro-1,2,4-triazol-5-one : emerging munitions compounds. Engineer Research and Development Center (U.S.), 2021. http://dx.doi.org/10.21079/11681/41743.

Full text
Abstract:
Two major components of insensitive munition formulations, nitroguanidine (NQ) and 3-nitro-1,2,4-triazol-5-one (NTO), are highly water soluble and therefore likely to photo-transform while in solution in the environment. The ecotoxicities of NQ and NTO solutions are known to increase with UV exposure, but a detailed accounting of aqueous degradation rates, products, and pathways under different exposure wavelengths is currently lacking. We irradiated aqueous solutions of NQ and NTO over a 32-h period at three ultraviolet wavelengths and analyzed their degradation rates and transformation produ
APA, Harvard, Vancouver, ISO, and other styles
2

Perkins, Dustin. Invasive exotic plant monitoring at Fossil Butte National Monument: 2021 field season. Edited by Alice Wondrak Biel. National Park Service, 2022. http://dx.doi.org/10.36967/2288496.

Full text
Abstract:
Invasive exotic plant (IEP) species are one of the biggest threats to natural ecosystem integrity and biodiversity, and controlling them is a high priority for the National Park Service. The Northern Colorado Plateau Network (NCPN) selected the early detection of IEPs as one of 11 monitoring protocols to be implemented as part of its long-term monitoring program. This report represents work completed during the 2021 field season at Fossil Butte National Monument (NM). From June 26 to 29, 2021, we recorded a total of 12 different priority IEP species during monitoring. A total of 763 priority I
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic '22~nm' for particular source types:
Journal articles Books
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography