Relevant bibliographies by topics / 32 NM TECHNOLOGY NODE

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic '32 NM TECHNOLOGY NODE'

Author: Grafiati
Published: 11 September 2023
Last updated: 31 July 2025

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Journal articles on the topic "32 NM TECHNOLOGY NODE"

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Das, Pankaj Kumar, Anurag Yadav, and Nidhi Chandra. "Analysis of Delay and Dynamic Crosstalk in Spatially Arranged Mixed CNT Bundle Interconnects at Different Technology Nodes." Key Engineering Materials 994 (November 5, 2024): 39–45. http://dx.doi.org/10.4028/p-vcvy4l.

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In the present nanoscale regime, mixed carbon nanotube bundles (MCBs) are considered to be highly promising interconnect options. This research paper introduces a spatially arranged mixed carbon nanotubes (CNTs) bundle (MCB), wherein single-walled CNTs (SWCNTs) and multi-walled CNTs (MWCNTs) occupy equal halves in the MCB. An equivalent single conductor (ESC) model for MCB is employed to analyze the interconnect performances in terms of signal transmission delay and dynamic crosstalk delay at different technology nodes (i.e., 32nm, 22nm, and 16 nm). Encouragingly, a significant reduction in si
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Allgair, John, Benjamin Bunday, Aaron Cordes, et al. "Metrology Requirements for the 32 nm Technology Node and Beyond." ECS Transactions 18, no. 1 (2019): 151–60. http://dx.doi.org/10.1149/1.3096443.

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Huang, Zhengfeng, Di Cao, Jianguo Cui, et al. "Design of Multiple Node Upset Tolerant Latch in 32 nm CMOS Technology." Journal of Computer-Aided Design & Computer Graphics 33, no. 3 (2021): 346–55. http://dx.doi.org/10.3724/sp.j.1089.2021.18385.

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Huang, Zhengfeng, Yang Guo, Shangjie Pan, et al. "Tri-Node Upsets Self-Recovery Latch Design in 32 nm CMOS Technology." Journal of Computer-Aided Design & Computer Graphics 32, no. 12 (2020): 2013–20. http://dx.doi.org/10.3724/sp.j.1089.2020.18160.

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Ono, Kazuo, Kenzo Kurotsuchi, Yoshihisa Fujisaki, Riichiro Takemura, Motoyasu Terao, and Norikatsu Takaura. "Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond." Japanese Journal of Applied Physics 48, no. 4 (2009): 04C160. http://dx.doi.org/10.1143/jjap.48.04c160.

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Orlowski, Marius, and Andreas Wild. "Can 3-D Devices Extend Moore's Law Beyond the 32 nm Technology Node?" ECS Transactions 3, no. 6 (2019): 3–17. http://dx.doi.org/10.1149/1.2357050.

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Park, Dae-Gyu, Mike Chudzik, and Haizhou Yin. "Challenges in FEOL Logic Device Integration for 32 nm Technology Node and Beyond." ECS Transactions 11, no. 6 (2019): 371–77. http://dx.doi.org/10.1149/1.2778394.

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Hussain, Inamul, and Saurabh Chaudhury. "CNFET Based Low Power Full Adder Circuit for VLSI Applications." Nanoscience & Nanotechnology-Asia 10, no. 3 (2020): 286–91. http://dx.doi.org/10.2174/2210681209666190220122553.

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Background: The Adder is one of the most prominent building blocks in VLSI circuits and systems. Performance of such systems depends mostly on the performance of the adder cell. The scaling down of devices has been the driving force in technological advances. However, in CMOS technology performance of adder cell decreases as technology node scaled down to deep micron regime. Objective: With the growth of research, new device model has been proposed based on carbon nano tube field effect transistor (CNFET). Therefore, there is a need of full adder cell, which performs sufficiently well in CNFET
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Kumar, Amresh, and Aminul Islam. "Multi-gate device and summing-circuit co-design robustness studies @ 32-nm technology node." Microsystem Technologies 23, no. 9 (2016): 4099–109. http://dx.doi.org/10.1007/s00542-016-3055-4.

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Andrieu, F., O. Weber, T. Ernst, O. Faynot, and S. Deleonibus. "Strain and channel engineering for fully depleted SOI MOSFETs towards the 32 nm technology node." Microelectronic Engineering 84, no. 9-10 (2007): 2047–53. http://dx.doi.org/10.1016/j.mee.2007.04.132.

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Dissertations / Theses on the topic "32 NM TECHNOLOGY NODE"

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Bansal, Anil Kumar. "CMOS scaling considerations in sub 10-nm node multiple-gate FETS." Thesis, IIT Delhi, 2019. http://eprint.iitd.ac.in:80//handle/2074/8046.

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Deng, Jie. "Device modeling and circuit performance evaluation for nanoscale devices : silicon technology beyond 45 nm node and carbon nanotube field effect transistors /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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YADAV, PUNEET. "DESIGN AND ANALYSIS OF A LOW POWER AND HIGH PERFORMANCE 10T SRAM CELL AT 32 NM TECHNOLOGY NODE." Thesis, 2023. http://dspace.dtu.ac.in:8080/jspui/handle/repository/19835.

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Memory is known to be one of the most crucial parts of any electronic system. However, a class of memory called the cache memory is even more crucial among the type of memories since it is the one working closely in synchronization with the central processing unit. There are millions of SRAM cells inside cache memory. SRAM cells must therefore possess a few essential attributes for cache memory to be reliable, including low dynamic and static power consumption, high data stability, and low read latency. A comprehensive review of the design and analysis of SRAM cells are performed,
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CHANG, JIA MIN, and 張家民. "PROCESS WINDOW AND OPC RULES FOR 32 NM NODE WITH 1.3 NA IMMERSION LITHOGRAPHY SYSTEM." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/68565777250786976346.

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碩士<br>南台科技大學<br>電子工程系<br>96<br>This thesis discusses the feasibility of 32 nm node with 1.3 NA and 193 nm light source immersion lithography system and tries to extend the lifetime of the system. We present the process window and some typical OPC rules by numerical simulation with open software SPLAT. Without any resolution enhancement technologies (RETs), the 10% variation process window is 44 nm × 4.09% and the 15% variation process window is 54 nm × 6.80%. We find that OPC rules for 32 nm node with the system is extremely tedious and suggest that the minimum spacing between two parallel li
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Chen, Hsiu Pin, and 陳修斌. "Device-level Doping Profile Analysis for Saddle-fin Device in 30 nm DRAM Technology Node." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/u452zb.

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Shi-HaoChen and 陳仕豪. "Performance Optimization of Gate-All-Around MOSFETs by Inner Spacers at 5 nm Technology Node." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/jg54wt.

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碩士<br>國立成功大學<br>奈米積體電路工程碩士學位學程<br>106<br>The evolution of semiconductor technology has been progressed since Moore’s Law proposed in 1964. Dimension scaling is always the challenge for each technology node to reduce producing cost. With the continuous scaling of devices, short-channel effects are more and more severe in limiting the performance enhancement. Multi-gate struc-tures, which enhance the gate control on short-channel effects and optimize the electri-cal characteristics, can overcome the limitation; FinFET is generally applied for ad-vanced semiconductor fabrications. However, for su
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Books on the topic "32 NM TECHNOLOGY NODE"

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Wang, Guilei. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0046-6.

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Wang, Guilei. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. Springer, 2019.

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Wang, Guilei. Investigation on Sige Selective Epitaxy for Source and Drain Engineering in 22 Nm CMOS Technology Node and Beyond. Springer Singapore Pte. Limited, 2020.

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Book chapters on the topic "32 NM TECHNOLOGY NODE"

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Srivastava, Prakhar, Bhawna Rawat, and Poornima Mittal. "Comparative Analysis of Various SRAM Bit Cells for 32 nm Technology Node." In Data Science and Applications. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-7820-5_1.

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Ahlawat, Siddhant, Siddharth, Bhawna Rawat, and Poornima Mittal. "A Comparative Performance Analysis of Varied 10T SRAM Cell Topologies at 32 nm Technology Node." In Modeling, Simulation and Optimization. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0836-1_5.

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Rawat, Bhawna, and Poornima Mittal. "Investigating the Impact of Schmitt Trigger on SRAM Cells at 32 nm Technology Node for Low Voltage Applications." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-6780-1_5.

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Tomita, Hiroshi, Yuji Yamada, Hidenobu Nagashima, Norio Ishikawa, and Yumiko Taniguchi. "New FEOL Cleaning Technology for Advanced Devices beyond 45 nm Node." In Solid State Phenomena. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-46-9.185.

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Song, Young Suh. "DC/AC Performance Boosting with Sub 5-nm Semiconductor Technology Node." In Handbook of Emerging Materials for Semiconductor Industry. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-6649-3_54.

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Jeffry Louis, V., and Jai Gopal Pandey. "A Novel Design of SRAM Using Memristors at 45 nm Technology." In Communications in Computer and Information Science. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9767-8_48.

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Rahi, Shiromani Balmukund. "Design of Low-Power Operation with Sub 7-nm Semiconductor Technology Node." In Handbook of Emerging Materials for Semiconductor Industry. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-6649-3_55.

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Munjal, Sameeksha, Neelam Rup Prakash, Jasbir Kaur, and Komal. "Impact of Geometrical Engineering on Junctionless Field Effect Transistor at a 28 nm Technology Node." In Latest Trends in Engineering and Technology. CRC Press, 2024. http://dx.doi.org/10.1201/9781032665443-8.

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Saxena, Anmol, Vyom Saraf, and Rutu Parekh. "ASIC Implementation of a 16-Bit Brent–Kung Adder at 45 nm Technology Node." In Sustainable Technology and Advanced Computing in Electrical Engineering. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-4364-5_8.

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Gupta, Vaibhav, Atharv Kapre, Shashank Kumar Dubey, and Aminul Islam. "Implementation and Analysis of CNFET-Based PCRAM Cell Using 32 nm Technology." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-3691-5_21.

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Conference papers on the topic "32 NM TECHNOLOGY NODE"

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Deschacht, D. "Interconnect design for a 32 nm node technology." In Technology of Integrated Systems in Nanoscale Era (DTIS). IEEE, 2011. http://dx.doi.org/10.1109/dtis.2011.5941410.

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Burghartz, J., M. Irmscher, F. Letzkus, J. Kretz, and D. Resnick. "Lithography for the 32-nm Node and Beyond." In 2006 Bipolar/BiCMOS Circuits and Technology Meeting. IEEE, 2006. http://dx.doi.org/10.1109/bipol.2006.311125.

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Shahidi, Ghavam G. "Design-technology interaction for post-32 nm node CMOS technologies." In 2010 IEEE Symposium on VLSI Technology. IEEE, 2010. http://dx.doi.org/10.1109/vlsit.2010.5556204.

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Adachi, Takashi, Yuichi Inazuki, Takanori Sutou, et al. "45-32-nm node photomask technology with water immersion lithography." In 26th Annual BACUS Symposium on Photomask Technology, edited by Patrick M. Martin and Robert J. Naber. SPIE, 2006. http://dx.doi.org/10.1117/12.689740.

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Gambino, Jeff, Fen Chen, and John He. "Copper interconnect technology for the 32 nm node and beyond." In 2009 IEEE Custom Integrated Circuits Conference (CICC). IEEE, 2009. http://dx.doi.org/10.1109/cicc.2009.5280904.

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Ward, Brian S., Lena Zavylova, Peter de Bisschop, and Jeroen van de Kerkhove. "Empirical study of OPC metrology requirements for 32-nm node logic." In Photomask Technology, edited by Hiroichi Kawahira and Larry S. Zurbrick. SPIE, 2008. http://dx.doi.org/10.1117/12.801458.

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Lu, C. L., L. Y. Hsia, T. H. Cheng, et al. "Improvement of etching selectivity for 32-nm node mask making." In Photomask and Next-Generation Lithography Mask Technology XIV, edited by Hidehiro Watanabe. SPIE, 2007. http://dx.doi.org/10.1117/12.728928.

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Monahan, K. M. "Enabling DFM and APC strategies at the 32 nm technology node." In ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005. IEEE, 2005. http://dx.doi.org/10.1109/issm.2005.1513388.

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Iessi, Umberto, Sara Loi, Antonio Salerno, et al. "Double patterning overlay and CD budget for 32 nm technology node." In SPIE Advanced Lithography. SPIE, 2008. http://dx.doi.org/10.1117/12.772795.

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Fukutome, H., K. Kawamura, H. Ohta, et al. "Cost-effective Ni-melt-FUSI boosting 32-nm node LSTP transistors." In 2008 Symposium on VLSI Technology. IEEE, 2008. http://dx.doi.org/10.1109/vlsit.2008.4588598.

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