Log in

Relevant bibliographies by topics / 4H-SiC / Dissertations / Theses

To see the other types of publications on this topic, follow the link: 4H-SiC.

Dissertations / Theses on the topic '4H-SiC'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 dissertations / theses for your research on the topic '4H-SiC.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.

1

Florentín, Matthieu. "Irradiation impact on optimized 4H-SiC MOSFETs." Doctoral thesis, Universitat Politècnica de Catalunya, 2016. http://hdl.handle.net/10803/395187.

Full text

Abstract:

Silicon (Si) power device’ technologies have reached a high maturity level, but current limitations on mechanic, temperature operation and electric performances require to investigate other semiconductor materials that can potentially compete with and overcome those border issues. This is the case of Silicon Carbide (SiC) and Gallium Nitride (GaN) which are becoming serious competitors to the Si due to their superior physical properties. Concerning SiC, the 4Hpolytype seems to be the best suitable candidate for high power MOSFETs according to its band gap, electric field strength, electron bu

APA, Harvard, Vancouver, ISO, and other styles

2

Robert, Teddy. "Spectroscopie des fautes d'empilement dans 4H-SiC." Montpellier 2, 2009. http://www.theses.fr/2009MON20166.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Li, Mingyu Williams John R. "Ohmic contacts to implanted (0001) 4H-SiC." Auburn, Ala., 2009. http://hdl.handle.net/10415/1960.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Haasmann, Daniel Erwin. "Active Defects in 4H–SiC MOS Devices." Thesis, Griffith University, 2015. http://hdl.handle.net/10072/367037.

Full text

Abstract:

The research findings presented in this thesis have provided several key contributions towards a better understanding of the SiC–SiO2 interface in SiC MOS structures. The electrically active defects directly responsible for degrading the channel-carrier mobility in 4H–SiC MOSFETs have been identified and a novel technique to detect these defects in 4H–SiC MOS capacitors has been proposed and experimentally demonstrated. With a better understanding of defects at the SiC–SiO2 interface two alternative gate oxide growth processes have been proposed to overcome the practical limitations associated

APA, Harvard, Vancouver, ISO, and other styles

5

Horita, Masahiro. "Isopolytypic Growth of Nonpolar 4H-AlN on 4H-SiC and Its Device Applications." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/81830.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Sejil, Selsabil. "Optimisation de l'épitaxie VLS du semiconducteur 4H-SiC : Réalisation de dopages localisés dans 4H-SiC par épitaxie VLS et application aux composants de puissance SiC." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSE1170/document.

Full text

Abstract:

L'objectif du projet VELSIC a été de démontrer la faisabilité de jonctions p+/n- profondes dans le semiconducteur 4H-SiC, de haute qualité électrique, comprenant une zone p++ réalisée par un procédé original d'épitaxie localisée à basse température (1100 – 1200°C), en configuration VLS (Vapeur - Liquide - Solide). Cette technique innovante de dopage par épitaxie utilise le substrat de SiC mono cristallin comme un germe de croissance sur lequel un empilement enterré de Al - Si est porté à fusion pour constituer un bain liquide, lequel est alimenté en carbone par la phase gazeuse. Cette méthode

APA, Harvard, Vancouver, ISO, and other styles

7

Usman, Muhammad. "Impact of Ionizing Radiation on 4H-SiC Devices." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-60763.

Full text

Abstract:

Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. However, the radiation tolerance and reliability of SiC-based devices needs to be understood by testing devices under controlled radiation environments. These kinds of studies have been previously p

APA, Harvard, Vancouver, ISO, and other styles

8

Zeng, Yutong. "Tailored Al2O3/4H-SiC interface using ion implantation." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-90233.

Full text

Abstract:

The effects of ion implantation of Al2O3interface to 4H-SiC epitaxial n- and p-type layers are presented. Different fluencies of carbon and nitrogen ions are used, as well as different annealing processes, with the aim to study the effects of implanted ions at the Al2O3/SiC interface. Capacitance-Voltage (C-V) behavior for fabricated MOS capacitors is studied before and after implantation to determine the effect of the implantation. Terman‟s method was employed to extract the density of interface traps (Dit) present at the Al2O3/SiC interface. Effective oxide charges density (Neff), present in

APA, Harvard, Vancouver, ISO, and other styles

9

Karalas, Charilaos-Kimonas. "Process optimization for the 4H-SiC/SiO2 interface." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-174842.

Full text

Abstract:

This thesis aims to optimize the process for the 4H-SiC/SiO2 interface formations. The experiments are made on metal-oxide-semiconductor (MOS) structures, where the semiconductor is an n-type epitaxially grown 4H-SiC thin film. The oxide is fabricated either with thermal oxidation, or by using plasma-enhanced chemical vapour deposition (PeCVD), utilising two different tools, Precision 5000 Mark II (P5000) and Plasmalab 80Plus system (Pekka). The deposition temperature is varied for the thermally grown oxide, while power, pressure and gas ratio of N2O/SiH4 is investigated for the PeCVD method.

APA, Harvard, Vancouver, ISO, and other styles

10

Suvanam, Sethu Saveda. "Radiation Hardness of 4H-SiC Devices and Circuits." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-199907.

Full text

Abstract:

Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. In this thesis, radiation effects of 4H-SiC bipolar devices, circuits and dielectrics for SiC are investigated under various radiation types. We have demonstrated for the first time the radiation hardness of 4H-SiC logic circuits exposed to extremely high doses

APA, Harvard, Vancouver, ISO, and other styles

11

Padavala, Balabalaji. "Epitaxy of boron phosphide on AIN, 4H-SiC, 3C-SiC and ZrB₂ substrates." Diss., Kansas State University, 2016. http://hdl.handle.net/2097/32808.

Full text

Abstract:

Doctor of Philosophy<br>Department of Chemical Engineering<br>James H. Edgar<br>The semiconductor boron phosphide (BP) has many outstanding features making it attractive for developing various electronic devices, including neutron detectors. In order to improve the efficiency of these devices, BP must have high crystal quality along with the best possible electrical properties. This research is focused on growing high quality crystalline BP films on a variety of superior substrates like AIN, 4H-SiC, 3C-SiC and ZrB₂ by chemical vapor deposition. In particular, the influence of various parameter

APA, Harvard, Vancouver, ISO, and other styles

12

Moghadam, Hamid Amini. "Quantified Characterization of Active Defects in 4H–SiC MOS Devices." Thesis, Griffith University, 2016. http://hdl.handle.net/10072/366432.

Full text

Abstract:

According to the U.S. Energy Information Administration (EIA), global energy demand is expected to increase considerably in the coming years as the result of population growth and economic development [1]. The vast majority of the world’s energy is generated from non-renewable sources, specifically oil, coal and natural gas. The increased volumes of carbon dioxide and other greenhouse gases released by burning these fossil fuels are believed to be the primary sources of global warming and the long term climate changes [2]. Furthermore, global warming is considered to be the greatest humanitar

APA, Harvard, Vancouver, ISO, and other styles

13

Lin, Huang-De Hennessy. "Low-temperature halo-carbon homoepitaxial growth of 4H-SiC." Diss., Mississippi State : Mississippi State University, 2008. http://library.msstate.edu/etd/show.asp?etd=etd-10142008-150935.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Ektarawong, Annop. "Growth and characterization of graphene on 4H-SiC(0001)." Thesis, Linköpings universitet, Halvledarmaterial, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-82014.

Full text

Abstract:

Thermal annealing 4H-SiC(0001) substrates to produce epitaxial graphene on Si-terminated SiC was performed using five different procedures, i.e. direct and indirect current heating at different based pressures and a temperature of about 1300 . The aim is to study the effects of graphene growth under different conditions and also to produce large homogeneous graphene. To investigate the prepared samples, two surface analytical techniques, i.e. low energy electron microscopy (LEEM) and photoelectron spectroscopy (PES) have been used. LEEM was first used to observe the surface morphologies of the

APA, Harvard, Vancouver, ISO, and other styles

15

Kwasnicki, Pawel. "Evaluation of doping in 4H-SiC by optical spectroscopies." Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20145/document.

Full text

Abstract:

Ce travail porte sur la caractérisation optique d'échantillons de 4H-SiC. Les échantillons étudiés ont été répartis en deux groupes : type-n et type-p. La croissance des épitaxies a été réalisée par CVD technique utilisant horizontal, paroi chaude, chauffée par résistance, en utilisant de l'hydrogène comme gaz porteur silane et/propane en tant que précurseurs de Si/C respectivement. Pour atteindre différents dopages : N2 pour le n-type et TMA pour de type p ont été utilisés. Les échantillons ont été étudiés par photoluminescence en basse température, micro-Raman and spectroscopies de masse d'i

APA, Harvard, Vancouver, ISO, and other styles

16

Domeij, Martin. "Dynamic avalanche in Si and 4H-SiC power diodes /." Stockholm, 1999. http://www.lib.kth.se/abs99/dome0604.pdf.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Solomon, Ruth Reena. "Fabrication and characterization of Cu/4H-SiC Schottky diodes." Connect to this title online, 2007. http://etd.lib.clemson.edu/documents/1193079981/.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Benjamin, Helen N. "Non-contact characterization of dielectric conduction on 4H-SiC." [Tampa, Fla] : University of South Florida, 2009. http://purl.fcla.edu/usf/dc/et/SFE0002984.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Jiang, Chennan. "Damage accumulation and recovery in Xe implanted 4H-SiC." Thesis, Poitiers, 2018. http://www.theses.fr/2018POIT2251/document.

Full text

Abstract:

Le carbure de silicium (SiC) est un matériau qui est considéré comme un semi-conducteur à large bande interdite ou une céramique suivant ses applications en microélectronique ou comme matériau nucléaire. Dans ces deux domaines d'application les défauts générés par l'implantation/irradiation d'ions (dopage, matériau de structure) doivent être contrôlés. Ce travail est une étude des défauts générés par l'implantation de gaz rares suivant les conditions d'implantation (fluence et température). La déformation élastique a plus particulièrement été étudiée dans le cas d'implantation de xénon à des t

APA, Harvard, Vancouver, ISO, and other styles

20

Freda, Albanese Loredana. "Characterization, modeling and simulation of 4H-SiC power diodes." Doctoral thesis, Universita degli studi di Salerno, 2011. http://hdl.handle.net/10556/217.

Full text

Abstract:

2009 - 2010<br>Exploring the attractive electrical properties of the Silicon Carbide (SiC) for power devices, the characterization and the analysis of 4H-SiC pin diodes is the main topic of this Ph.D. document. In particular, the thesis concerns the development of an auto consistent, analytical, physics based model, created for accurately replicating the power diodes behavior, including both on-state and transient conditions. At the present, the fabrication of SiC devices with the given performances is not completely obvious because of the lack of knowledge still existing in the physical

APA, Harvard, Vancouver, ISO, and other styles

21

Song, Xi. "Activation des dopants implantés dans le carbure de silicium (3C-SiC et 4H-SiC)." Thesis, Tours, 2012. http://www.theses.fr/2012TOUR4019/document.

Full text

Abstract:

Ces travaux de thèse sont consacrés à l’étude de l’activation des dopants implantés dans le carbure de silicium. L’objectif est de proposer des conditions d’implantation optimisées pour réaliser le dopage de type n dans le 3C-SiC et de type p dans le 4H-SiC.Nous avons tout d’abord étudié les implantations de type n dans le 3C-SiC. Pour cela, des implantations de N, de P et une co-implantation N&P avec les recuits d’activation associés ont été étudiés. L’implantation d’azote suivie d’un recuit à 1400°C-30min a permis une activation proche de 100% tout en conservant une bonne qualité cristal

APA, Harvard, Vancouver, ISO, and other styles

22

Shin, Yun ji. "Étude du procédé de croissance en solution à haute température pour le développement de substrats de 4H-SiC fortement dopes." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAI058/document.

Full text

Abstract:

Le carbure de silicium est un semi-conducteur à grand gap qui s’est récemment imposé comme un matériau clé pour l’électronique de puissance. Les cristaux massifs ainsi que les couches épitaxiales actives sont aujourd’hui obtenus par des procédés en phase gazeuse, comme la croissance par sublimation (ou PVT) et le dépôt chimique en phase gazeuse (CVD), respectivement. Le procédé de croissance en solution à haute température est actuellement revisité en raison de sa capacité à atteindre des qualités cristallines exceptionnelles. Ce travail est une contribution au développement du procédé de croi

APA, Harvard, Vancouver, ISO, and other styles

23

Österman, John. "Characterization of electrical properties in 4H-SiC by imaging techniques." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-64.

Full text

Abstract:

<p>4H-SiC has physical properties supremely suited for a variety of high power, high frequency and high temperature electronic device applications. To fully take advantage of the material's potential, several problems remain to be solved. Two of the most important are (1) the characterization and understanding of crystallographic defects and their electrical impact on device performance, and (2) the introduction of acceptor dopants, their activation and control of the final distribution of charge carriers. Two main experimental methods have been employed in this thesis to analyze 4H-SiC materi

APA, Harvard, Vancouver, ISO, and other styles

24

Rong, Hua. "Development of 4H-SiC power MOSFETs for high voltage applications." Thesis, University of Warwick, 2015. http://wrap.warwick.ac.uk/79426/.

Full text

Abstract:

Silicon carbide is a promising wide bandgap semiconductor for high-power, high-temperature and high frequency devices, owing to its high breakdown electric field strength, high thermal conductivity and ability to grow high quality SiO2 layers by thermal oxidation. Although the SiC power MOSFET (metal-oxide-semiconductor field effect transistor) is preferred as a power switch, it has suffered from low channel mobility with only single digit field effect mobility achieved using standard oxidation process (1200◦C thermal oxidation). As such, this thesis is focussed on the development of 4H-SiC MO

APA, Harvard, Vancouver, ISO, and other styles

25

Wolborski, Maciej. "Characterization of dielectric layers for passivation of 4H-SiC devices." Doctoral thesis, Stockholm : Laboratory of Solid State Electronics, Department of Microelectronics and Applied Physics, Royal Institute of Technology (KTH), 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4229.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Virojanadara, Chariya. "Studies of surface and interface properties of 4H-SiC/SiO₂ /." Linköping : Univ, 2004. http://www.bibl.liu.se/liupubl/disp/disp2004/tek890s.pdf.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Morrison, Dominique Johanne. "The fabrication and characterisation of 4H-SiC Schottky barrier diodes." Thesis, University of Newcastle Upon Tyne, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.324784.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Mohammadi, Zohreh. "Design, simulation, fabrication and characterisation of 4H-SiC trench MOSFETs." Thesis, University of Warwick, 2018. http://wrap.warwick.ac.uk/109953/.

Full text

Abstract:

For solid-state power devices, there exists need for a material with a higher band gap which will result in a higher critical electric field, improved power efficiency and thermal performance. This has resulted in the use of Silicon Carbide (SiC) as a serious alternative to Silicon for power devices. SiC trench MOSFETs have attracted major attention in recent years because of 1) lower on resistance by eliminating the JFET effect which exists in lateral MOSFETs, 2) higher channel density which lowers the threshold voltage and 3) reduction of the required surface area because of the vertical cha

APA, Harvard, Vancouver, ISO, and other styles

29

Fisher, Craig A. "Development of 4H-SiC PiN diodes for high voltage applications." Thesis, University of Warwick, 2014. http://wrap.warwick.ac.uk/62126/.

Full text

Abstract:

Despite the excellent electrical and thermal properties of 4H-silicon carbide (SiC), the fabrication of high-voltage SiC power devices is still proving problematic, being hindered by material defects resulting in low carrier lifetimes and forward voltage drift, and suboptimum ohmic contacts to p-type material. The PiN diode is one such device that suffers from the aforementioned problems, though at the same time is sought after for high voltage power electronics applications due to the prospect of greatly reduced power losses and increased power handling capability than the Si devices currentl

APA, Harvard, Vancouver, ISO, and other styles

30

Rajgopal, Srihari. "FABRICATION AND CHARACTERIZATION OF 4H-SiC JFET-BASED INTEGRATED CIRCUITS." Case Western Reserve University School of Graduate Studies / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=case154350167704502.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Elahipanah, Hossein. "Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors." Doctoral thesis, KTH, Elektronik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-211659.

Full text

Abstract:

4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. In this thesis, we focus on the improvement of the 4H-SiC BJT performance, including the device optimization and process development. To optimize the 4H-SiC BJT design, a compr

APA, Harvard, Vancouver, ISO, and other styles

32

Tsirimpis, Athanasios [Verfasser], and Heiko [Gutachter] Weber. "Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors / Athanasios Tsirimpis ; Gutachter: Heiko Weber." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2018. http://d-nb.info/1155590627/34.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Chanda, Sashi Kumar. "INVESTIGATION OF DEFECTS IN N-TYPE 4H-SIC AND SEMI-INSULATING 6H-SIC USING PHOTOLUMINESCENCE SPECTROSCOPY." MSSTATE, 2005. http://sun.library.msstate.edu/ETD-db/theses/available/etd-07072005-102232/.

Full text

Abstract:

Photoluminescence spectroscopy is one of the most efficient and sensitive non-contact techniques used to investigate defects in SiC. In this work, room temperature photoluminescence mapping is employed to identify different defects that influence material properties. The correlation of the distribution of these defects in n-type 4H-SiC substrates with electronic properties of SiC revealed connection between the deep levels acting as efficient recombination centers and doping in the substrate. Since deep levels are known to act as minority carrier lifetime killers, the obtained knowledge may co

APA, Harvard, Vancouver, ISO, and other styles

34

Alexandru, Mihaela. "4H-SiC Integrated circuits for high temperature and harsh environment applications." Doctoral thesis, Universitat Politècnica de Catalunya, 2013. http://hdl.handle.net/10803/129635.

Full text

Abstract:

Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on

APA, Harvard, Vancouver, ISO, and other styles

35

Lades, Martin. "Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC /." [S.l. : s.n.], 2000. http://deposit.ddb.de/cgi-bin/dokserv?idn=962057827.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Pourbagheri, Mahabadi Haniyeh. "Optical studies of surface recombination velocity in 4H-SiC epitaxial layer." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-37225.

Full text

Abstract:

In this work optical studies of the effect of surface passivation for surface recombination velocity at the interface between 4H-SiC epitaxial layer and various passivation layers are presented. Four samples have been used consisting of three main parts: thin film oxide layer, 4H-SiC epitaxial layer and 4H-SiC substrate. The substrates for all samples are the same, highly doped n-type. The doping and thickness of the epitaxial layers are different; three samples have n-type epilayer, doping around 3-5×1015cm-3and one sample, the thinnest one, has a p-type doping of 1×1017cm-3.Two types of oxid

APA, Harvard, Vancouver, ISO, and other styles

37

Cristiano, Marco. "Design considerations for a high temperature image sensor in 4H-SiC." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-185268.

Full text

Abstract:

This thesis is part of a project, Working on Venus, funded by the Knut and Alice Wallenberg Foundation (one of the largest Swedish funders of research) and developed by KTH in collaboration with Linkӧping University. The goal of this project is to create a lander able to investigate the planet Venus and to work under extreme conditions, i.e. it has to be able to withstand at high levels of radiation and high temperatures such as that of Venus surface (that is about 460 °C) without integrating a dedicated bulky cooling system to reduce the overall weight and volume of the system. In this thesis

APA, Harvard, Vancouver, ISO, and other styles

38

Bouhafs, Chamseddine. "Structural and Electronic Properties of Graphene on 4H- and 3C-SiC." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-132408.

Full text

Abstract:

Graphene is a one-atom-tick carbon layer arranged in a honeycomb lattice. Graphene was first experimentally demonstrated by Andre Geim and Konstantin Novoselov in 2004 using mechanical exfoliation of highly oriented pyrolytic graphite (exfoliated graphene flakes), for which they received the Nobel Prize in Physics in 2010. Exfoliated graphene flakes show outstanding electronic properties, e.g., very high free charge carrier mobility parameters and ballistic transport at room temperature. This makes graphene a suitable material for next generation radio-frequency and terahertz electronic device

APA, Harvard, Vancouver, ISO, and other styles

39

Zhu, Xingguang Williams John R. "Alternative growth and interface passivation techniques for SiO2 on 4H-SiC." Auburn, Ala, 2008. http://hdl.handle.net/10415/1494.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Chen, Zengjun Williams John R. "Electrical properties of MOS devices fabricated on 4H carbon-face SiC." Auburn, Ala, 2009. http://hdl.handle.net/10415/1858.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Omotoso, Ezekiel. "Electrical characterization of process- and radiation-induced defects in 4H-SiC." Thesis, University of Pretoria, 2015. http://hdl.handle.net/2263/53547.

Full text

Abstract:

Devices for operation in aerospace, manufacturing industries, defence and radiation-harsh environments need to be manufactured from materials that are resistant to the frequent damage caused by irradiation and high-temperature environments. Silicon carbide (SiC) is a wide-bandgap semiconductor material that promises to provide solutions to these problems based on its capability to operate under extreme conditions of temperature and radiation. These conditions introduce defects in the materials. Such defects play an important role in determining the properties of devices, albeit beneficial or d

APA, Harvard, Vancouver, ISO, and other styles

42

Stone, Stephen E. "A Study of the Effects of Neutron Irradiation and Low Temperature Annealing on the Electrical Properties of 4H Silicon Carbide." The Ohio State University, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=osu1211898142.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Short, Eugene L. "Sequential afterglow processing and non-contact Corona-Kelvin metrology of 4H-SiC." [Tampa, Fla] : University of South Florida, 2009. http://purl.fcla.edu/usf/dc/et/SFE0003102.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Negoro, Yuki. "Ion implantation and embedded epitaxial growth for 4H-SiC power electronic devices." 京都大学 (Kyoto University), 2005. http://hdl.handle.net/2433/144921.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Short, Eugene L. III. "Sequential Afterglow Processing and Non-Contact Corona-Kelvin Metrology of 4H-SiC." Scholar Commons, 2009. https://scholarcommons.usf.edu/etd/19.

Full text

Abstract:

Silicon carbide (SiC) is a wide band-gap semiconductor with advantageous electrical and thermal properties making it attractive for high temperature and power applications. However, difficulties with oxide/SiC structures have posed challenges to the development of practical MOS-type devices. Surface conditioning and oxidation of 4H-SiC were investigated using a novel sequential afterglow processing approach combined with the unique capabilities of non-contact corona-Kelvin metrology. The use of remote plasma assisted thermal oxidation facilitated film growth at low temperature and pressure wit

APA, Harvard, Vancouver, ISO, and other styles

46

Di, Benedetto Luigi. "Analysis and design of 4H-SiC bipolar mode field effect power (BMFET)." Doctoral thesis, Universita degli studi di Salerno, 2013. http://hdl.handle.net/10556/894.

Full text

Abstract:

2011 - 2012<br>Analysis and design of a new Silicon Carbide polytype 4H (4H-SiC) bipolar power transistor are the main topics of this Ph.D. thesis. The device is the Bipolar Mode Field Effect Transistor (BMFET) and exploits the electric field due to the channel punching-through in order to have a normally-off behavior and the minority carrier injection from the gate regions into the channel in order to obtain the channel conductivity modulation. The structure of the transistor is oxide-free and its advantages are due to the lower conduction resistance, to the higher output current density

APA, Harvard, Vancouver, ISO, and other styles

47

Maslougkas, Sotirios. "Gate oxide characterization of 4H-SiC MOS capacitors : A study of the effects of electrical stress on the flat-band voltage of n-type substrate 4H-SiC MOS capacitors." Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-301848.

Full text

Abstract:

Silicon is the main material used in electronics. The evolution of power electronics and the need for more power efficient semiconductor devices led silicon to its limits. Silicon carbide is a promising material for electronic applications with a wide band-gap, high critical electric field, high thermal conductivity and saturation velocity. Except from its superiority to silicon, silicon carbide comes with a drawback of about two orders of magnitude more interface traps in the SiC/SiO2 interface compared with silicon. A result of this drawback is a flat-band voltage shift when applying a stres

APA, Harvard, Vancouver, ISO, and other styles

48

Nguyen, Tuan Khoa. "Piezoresistive Effect in 4H Silicon Carbide towards Mechanical Sensing in Harsh Environments." Thesis, Griffith University, 2018. http://hdl.handle.net/10072/381509.

Full text

Abstract:

The fast-growing demand for mechanical sensors in harsh environments (e.g. mining/deep oil explorations, power/chemical plants and space explorations) urges the development of advanced materials which can replace silicon to work in these conditions. The superior mechanical properties of 4H silicon carbide (4H-SiC) combined with the physical stability at high temperatures offer new capabilities to develop MEMS sensors for those challenging situations. The piezoresistive effect is positioned as one of the most significant sensing mechanisms used in MEMS/NEMS sensors to detect or monitor mechanic

APA, Harvard, Vancouver, ISO, and other styles

49

Grivickas, Paulius. "Optical studies of carrier transport and fundamental absorption in 4H-SiC and Si." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3695.

Full text

Abstract:

<p>The Fourier transient grating (FTG) technique and a novelspectroscopic technique, both based on free carrier absorption(FCA) probing, have been applied to study the carrierdiffusivity in 4H-SiC and the fundamental absorption edge in4H-SiC and Si, respectively.</p><p>FTG is a unique technique capable of detecting diffusioncoefficient dependence over a broad injection interval rangingfrom minority carrier diffusion to the ambipolar case. In thiswork the technique is used for thin epitaxial 4H-SiC layers,increasing the time- and spatial-resolution of the experimentalsetup by factors of ~100 an

APA, Harvard, Vancouver, ISO, and other styles

50

Wutikuer, Otkur. "Fabrication and Characterization of 4H-SiC MOS Capacitors with Different Dielectric Layer Treatments." Thesis, Linköpings universitet, Halvledarmaterial, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-144984.

Full text

Abstract:

4H-SiC based Metal-Oxide Semiconductor(MOS) capacitors are promising key components for next generation power devices. For high frequency power applications, however, there is a major drawback of this type of devices, i.e. they have low inversion channel mobility that consequently affects the switching operation in MOS Field-Effect Transistors (MOSFETs). Carbon clusters or excess carbon atoms in the interface between the dielectric layer and SiC is commonly considered to be the carrier trapping and scattering centers that lower the carrier channel mobility. Based on the previous work in the re

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!