Academic literature on the topic 'Afterpulsing effect'

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Journal articles on the topic "Afterpulsing effect"

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Lai, Yuanfan, Zongyao Shen, Yong Chen, Jindong Wang, Jianping Guo, and Zhengjun Wei. "The Impact of Afterpulsing Effects in Single-Photon Detectors on the Performance Metrics of Single-Photon Detection Systems." Photonics 11, no. 11 (2024): 1074. http://dx.doi.org/10.3390/photonics11111074.

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A single-photon detection system based on InGaAs SPADs is a high-precision optical measurement system capable of detecting quantum-level optical signals. However, the afterpulsing effect when using InGaAs SPADs severely limits their practical utility. The impact of afterpulsing effects on the performance of systems based on this type of detector can no longer be ignored. Therefore, this paper provides a detailed analysis of the measurement errors induced by afterpulsing effects and proposes a correction method based on a power-law model. This method analyzes the probability distribution of aft
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Wang, Fang-Xiang, Wei Chen, Ya-Ping Li, et al. "Non-Markovian Property of Afterpulsing Effect in Single-Photon Avalanche Detector." Journal of Lightwave Technology 34, no. 15 (2016): 3610–15. http://dx.doi.org/10.1109/jlt.2016.2577141.

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Ishii, Kunihiko, and Tahei Tahara. "Correction of the afterpulsing effect in fluorescence correlation spectroscopy using time symmetry analysis." Optics Express 23, no. 25 (2015): 32387. http://dx.doi.org/10.1364/oe.23.032387.

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Yen, H. T., S. D. Lin, and C. M. Tsai. "A simple method to characterize the afterpulsing effect in single photon avalanche photodiode." Journal of Applied Physics 104, no. 5 (2008): 054504. http://dx.doi.org/10.1063/1.2968434.

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Yu, Chao, Tianyi Li, Xian-Song Zhao, et al. "Free-running 4H-SiC single-photon detector with ultralow afterpulse probability at 266 nm." Review of Scientific Instruments 94, no. 3 (2023): 033101. http://dx.doi.org/10.1063/5.0137823.

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Ultraviolet single-photon detector (UVSPD) provides a key tool for applications requiring ultraweak light detection in the wavelength band. Here, we report a 4H-SiC single-photon avalanche diode (SPAD) based free-running UVSPD with ultralow afterpulse probability. We design and fabricate the 4H-SiC SPAD with a beveled mesa structure, which exhibits the characteristic of ultralow dark current. We further develop a readout circuit of passive quenching and active reset with a tunable hold-off time setting to considerably suppress the afterpulsing effect. The nonuniformity of photon detection effi
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Liu, Danlu, Ming Li, Tang Xu, Jie Dong, Yuming Fang, and Yue Xu. "Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology." Journal of Semiconductors 44, no. 11 (2023): 114102. http://dx.doi.org/10.1088/1674-4926/44/11/114102.

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Abstract The influence of the virtual guard ring width (GRW) on the performance of the p-well/deep n-well single-photon avalanche diode (SPAD) in a 180 nm standard CMOS process was investigated. TCAD simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1 μm. It is experimentally found that, compared with an SPAD with GRW = 2 μm, the dark count rate (DCR) and afterpulsing probability (AP) of the SPAD with GRW = 1 μm is significantly increased by 2.7 times and twofold, respectively, meanwhile, its photon de
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Kiyomoto, Takuto, Tsutomu Nagayoshi, Shunsuke Sakurai, et al. "Competition between increasing and decreasing effects of the afterpulsing rate of PMTs during night-sky observations." Journal of Instrumentation 20, no. 06 (2025): C06005. https://doi.org/10.1088/1748-0221/20/06/c06005.

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Abstract Photomultiplier tubes (PMTs) have been widely used in imaging atmospheric Cherenkov telescopes (IACTs). The Large-Sized Telescopes (LSTs) of the Cherenkov Telescope Array Observatory (CTAO), the latest-generation IACTs, are optimized for challenging observations of low-energy gamma rays, specifically in the 20 to 150 GeV range. To this end, PMTs with an exceptionally low afterpulsing rate have been developed and installed. However, the afterpulsing rate increases over time due to the infiltration of atmospheric molecules, particularly helium, into the tube. Interestingly, we found tha
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Liu, Junliang, Yining Xu, Zheng Wang, et al. "Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching." Sensors 20, no. 16 (2020): 4384. http://dx.doi.org/10.3390/s20164384.

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High detection efficiency appears to be associated with a high afterpulse probability for InP-based single-photon avalanche diodes. In this paper, we present a new hybrid quenching technique that combines the advantages of both fast active quenching and high-frequency gated-passive quenching, with the aim of suppressing higher-order afterpulsing effects. Our results showed that the hybrid quenching method contributed to a 10% to 85% reduction of afterpulses with a gate-free detection efficiency of 4% to 10% at 1.06 μm, with 40 ns dead time, compared with the counter-based hold-off method. With
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Wang, Chen, Jingyuan Wang, Zhiyong Xu, et al. "Afterpulsing effects in SPAD-based photon-counting communication system." Optics Communications 443 (July 2019): 202–10. http://dx.doi.org/10.1016/j.optcom.2019.03.039.

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Xudong Jiang, M. A. Itzler, R. Ben-Michael, et al. "Afterpulsing Effects in Free-Running InGaAsP Single-Photon Avalanche Diodes." IEEE Journal of Quantum Electronics 44, no. 1 (2008): 3–11. http://dx.doi.org/10.1109/jqe.2007.906996.

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Dissertations / Theses on the topic "Afterpulsing effect"

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Lozza, Valentina. "Low energy low background photon counter for wisp search experiments." Doctoral thesis, Università degli studi di Trieste, 2010. http://hdl.handle.net/10077/3719.

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2008/2009<br>Remarkable interest has recently arisen about the search for Weakly Inter- acting Sub-eV Particles (WISPs), such as axions, Axion Like Particles (ALPs), Minicharged and chameleon particles, all of which are not included in the Stan- dard Model. Precision experiments searching for WISPs probe energy scales as high as 10^6 TeV and are complementary to accelerator experiments, where the energy scale is a few TeV. The axion, in particular, is the oldest studied and has the strongest theoretical motivation, having its origin in Quantum Chromodynamics. It was introduced for the
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Tzou, Bo-Wei, and 鄒柏威. "Analysis of Afterpulsing Effect in Single Photon Avalanche Diode." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/43346478818196393716.

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碩士<br>國立交通大學<br>電子工程學系 電子研究所<br>104<br>In this work, the afterpulsing effect in single photon avalanche diodes (SPADs) fabricated by TSMC 25HV (high voltage) CMOS process are studied. A new method for evaluating afterpulsing effect has been proposed and demonstrated. Different from conventional method requiring photon correlation measurement and short-pulsed light source, the proposed scheme is simply a measurement of dark count rate (DCR) distribution. Because the afterpulsing events correlate with their parent breakdowns, the DCR distribution deviates from the original Poisson one, which can
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Conference papers on the topic "Afterpulsing effect"

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Contini, D., A. Dalla Mora, L. Di Sieno, et al. "Memory effect in gated single-photon avalanche diodes: a limiting noise contribution similar to afterpulsing." In SPIE OPTO, edited by Bernd Witzigmann, Marek Osinski, Fritz Henneberger, and Yasuhiko Arakawa. SPIE, 2013. http://dx.doi.org/10.1117/12.2005013.

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Ben-Michael, R., M. A. Itzler, and B. Nyman. "Afterpulsing Effects in 1.5 μm Single Photon Avalanche Photodetectors." In 2006 IEEE LEOS Annual Meeting Conference. IEEE, 2006. http://dx.doi.org/10.1109/leos.2006.279001.

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Niclass, Cristiano, and Mineki Soga. "A miniature actively recharged single-photon detector free of afterpulsing effects with 6ns dead time in a 0.18µm CMOS technology." In 2010 IEEE International Electron Devices Meeting (IEDM). IEEE, 2010. http://dx.doi.org/10.1109/iedm.2010.5703360.

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