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Dissertations / Theses on the topic 'AlGaN/GaN heterostructure'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Nguyen, Quan H. "Physical Sensing Effects in AlGaN/GaN Heterostructure and Applications." Thesis, Griffith University, 2021. http://hdl.handle.net/10072/411259.

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Gallium nitride (GaN) is a promising material for electronic sensing devices operating in harsh environments, thanks to its large energy band gap, superior mechanical properties and excellent chemical inertness. Among various wide energy band gap semiconductors such as 3C-SiC, 4H-SiC, 6H-SiC materials, GaN and its compounds are considered as the most suitable materials for Micro Electro-Mechanical Systems (MEMS) sensors for harsh environment applications, as it can be grown on both sapphire and Si substrates, which are compatible with conventional MEMS fabrication processes, while reducing the

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2

Donmezer, Fatma. "Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/53139.

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Understanding the magnitude of the temperature in AlGaN/GaN heterostructure fi eld e ffect transistors(HFETs) is a critical aspect of understanding their reliability and providing proper thermal management. At present, most models used to determine the temperature rise in these devices are based on continuum based heat conduction. However, in such devices, the heat generation region can be on the order of or smaller than the phonon mean free path of the heat carriers, and thus, such models may under predict the temperature. The aim of this work is towards building a multiscale thermal model th

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3

Tan, Wei Sin. "An experimental study of AlGaN/GaN heterostructure field-effect transistors (HFETs)." Thesis, University of Sheffield, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.400000.

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4

Song, Junghui. "Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250296506.

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5

Balaz, Daniel. "Current collapse and device degradation in AlGaN/GaN heterostructure field effect transistors." Thesis, University of Glasgow, 2011. http://theses.gla.ac.uk/2676/.

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A spectrum of phenomena related to the reliability of AlGaN/GaN HEMTs are investigated in this thesis using numerical simulations. The focus is on trap related phenomena that lead to decrease in the power output and failure of devices, i.e. the current collapse and the device degradation. The current collapse phenomenon has been largely suppressed using SiN passivation, but there are gaps in the understanding of the process leading to this effect. Device degradation, on the other side, is a pending problem of current devices and an obstacle to wide penetration of the market. Calibration of I-V

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6

El, Zammar Georgio. "Process of high power Schottky diodes on the AlGaN/GaN heterostructure epitaxied on Si." Thesis, Tours, 2017. http://www.theses.fr/2017TOUR4030/document.

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Les convertisseurs à base de Si atteignent leurs limites. Face à ces besoins, le GaN, avec sa vitesse de saturation des électrons et le champ électrique de claquage élevés est candidat idéal pour réaliser des redresseurs, surtout s’il est épitaxié sur substrat à bas cout. Ce travail est dédié au développement des diodes Schottky sur AlGaN/GaN. Une couche de SiNx en faible traction a été obtenue. Un contact ohmique de Ti/Al avec une gravure partiel a donné une Rc de 2.8 Ω.mm avec une résistance Rsh de 480 Ω/□. Des diodes Schottky avec les étapes issues de ces études ont été fabriqué. La diode r

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7

Waechtler, Thomas, Michael J. Manfra, Nils G. Weimann, and Oleg Mitrofanov. "High Power GaN/AlGaN/GaN HEMTs Grown by Plasma-Assisted MBE Operating at 2 to 25 GHz." Universitätsbibliothek Chemnitz, 2005. http://nbn-resolving.de/urn:nbn:de:swb:ch1-200500380.

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Heterostructures of the materials system GaN/AlGaN/GaN were grown by molecular beam epitaxy on 6H-SiC substrates and high electron mobility transistors (HEMTs) were fabricated. For devices with large gate periphery an air bridge technology was developed for the drain contacts of the finger structure. The devices showed DC drain currents of more than 1 A/mm and values of the transconductance between 120 and 140 mS/mm. A power added efficiency of 41 % was measured on devices with a gate length of 1 µm at 2 GHz and 45 V drain bias. Power values of 8 W/mm were obtained. Devices with submicron gate

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8

Simms, Richard James Turkington. "Insights into the reliability and physical properties of AlGaN/GaN based heterostructure devices using Optical Analysis." Thesis, University of Bristol, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.535473.

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9

Saxena, Himanshu. "Tunable Terahertz Detectors Based on Plasmon Exciation in Two Dimensional Electron Gasses in InGaAs/InP and AlGaN/GaN HEMT." Doctoral diss., University of Central Florida, 2009. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3924.

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The observation of voltage-tunable plasmon resonances in the terahertz range in two dimensional electron gas (2-deg) of a high electron mobility transistor (HEMT) fabricated from the InGaAs/InP and AlGaN/GaN materials systems is reported. The devices were fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography process and a semi-transparent gate contact that consisted of a 0.5 [micro]m period transmission grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the frequ

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10

Narayan, Bravishma. "Study of III-N heterostructure field effect transistors." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37299.

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This thesis describes the design, fabrication and characterization of AlGaN/GaN Heterostructure Field E ect Transistors (HFETs) grown by a Metal Organic Chemical Vapor Deposition (MOCVD) on sapphire substrates. The objective of this research is to develop AlGaN/GaN power devices with high breakdown voltage (greater than 1 kV) and low turn-on resistance. Various characteristics such as current drive (Idss), transconductance (gm) and threshold voltage (Vth) have also been measured and the results have been discussed. Two major challenges with the development of high breakdown voltage AlGaN/GaN H

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11

Jessen, Gregg Huascar. "Investigation and Characterization of AlGaN/GaN Device Structures and the Effects of Material Defects and Processing on Device Performance." Connect to this title online, 2002. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1038605384.

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Thesis (Ph. D)--Ohio State University, 2002.<br>Title from first page of PDF file. Document formatted into pages; contains xxx,198 p.: ill. (some col.). Includes abstract and vita. Advisor: Leonard J. Brillson, Dept. of Electrical Engineering. Includes bibliographical references (p. 188-198).

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12

Hoy, Daniel R. "Gallium Nitride and Aluminum Gallium Nitride Heterojunctions for Electronic Spin Injection and Magnetic Gadolinium Doping." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1331855661.

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13

Fesiienko, Oleh. "Procédés de gravure à faible endommagement des surfaces : application à la gravure SiN sur AlGaN/GaN pour les transistors à haute mobilité électronique." Electronic Thesis or Diss., Université Grenoble Alpes, 2023. http://www.theses.fr/2023GRALT094.

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Les semi-conducteurs en Nitrure de Gallium (GaN), constituent des matériaux prometteurs pour la fabrication de transistors à haute mobilité électronique (HEMT) pour les prochaines générations de dispositifs de puissance, grâce à leurs propriétés physiques exceptionnelles adaptées aux applications à haute tension, température, et fréquence. Lors de la fabrication de HEMT à basé d'une hétérostructure AlGaN/GaN, la formation de la grille est reconnue comme l'étape la plus critique pouvant entraîner une dégradation électrique du transistor. Cette étape vise le retrait de la couche de cap SiN proté

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14

Le, roux Frédéric. "Développement de procédés de gravure plasma sans dommage pour l'électronique de puissance à base de GaN." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT017.

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En électronique de puissance, le GaN est devenu un matériau de choix : il répond à des enjeux de haute performance énergétique, tout en favorisant une compacité et une légèreté des composants. Lors de la fabrication de dispositifs de puissance basés sur une hétérostructure AlGaN/GaN, la gravure plasma induit des dégradations dans le matériau et réduit les propriétés électroniques des composants notamment les diodes et les HEMT (High Electron Mobility Transistors). Ces travaux de thèses se sont focalisés sur l’étude de ces dégradations et proposent des procédés de gravure industrialisables qui

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15

Meunier, Richard. "Optimization of the elaboration of insulating layers for the gate structures and the passivation of MIS-HEMT transistors on GaN." Thesis, Toulouse 3, 2016. http://www.theses.fr/2016TOU30150/document.

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Les potentialités du nitrure de gallium (GaN) et notamment de l'hétérostructure AlGaN/GaN, semiconducteur à large bande interdite, en font un matériau particulièrement intéressant en électronique de puissance, notamment pour des applications haute tension, haute température et haute fréquence. L'objectif de ce travail de thèse était de développer et d'optimiser l'étape d'isolation de la grille lors la réalisation de transistors MIS-HEMT de puissance sur hétérostructure AlGaN/GaN, le but étant de réduire les courants de fuite de grille sans perturber les propriétés du transistor. Après avoir év

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16

Greco, Giuseppe. "AlGaN/GaN heterostructures for enhancement mode transistors." Doctoral thesis, Università di Catania, 2013. http://hdl.handle.net/10761/1347.

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Today the continuous increase of electric power demand is in our society a global concern. Hence, the reduction of the energy consumption has become the main task of modern power electronics. In this context, wide band semiconductors (WBG), such as gallium nitride (GaN) and related alloys, have outstanding physical properties that can enable to overcome the limitations of Silicon, in terms of operating power, frequency and temperature of the devices. An interesting aspects related to GaN materials is the possibility to grow AlGaN/GaN heterostructures, in which a two dimensional electron gas (2

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17

Nakazawa, Satoshi. "Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices." Kyoto University, 2019. http://hdl.handle.net/2433/244553.

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18

Pezeril, Maxime. "Développement d'un procédé de gravure par plasma pour les transistors de puissance à base de matériaux III-V." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT049.

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Dans le secteur de l’électronique de puissance, le Nitrure de Gallium (GaN) émerge comme un matériau prometteur grâce à ses qualités intrinsèques, en particulier son grand gap et sa tenue à fortes tensions. Les transistors qui l’utilisent, appelés HEMT (High Electron Mobility Transistors), reposent sur une propriété particulière d’une hétérostructure AlGaN/GaN: un canal bi-dimensionnel (2DEG). Les différentes technologies sont encore en développement et font face à différentes problématiques liées aux étapes critiques du procédé de fabrication des composants. L’une de ces étapes est la gravure

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19

Cherns, Peter David. "A transmission electron microscopy study of AlGaN/GaN heterostructures." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597581.

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The use of an A1N interlayer to allow the growth of crack-free AlGaN on a GaN template is investigated. The impact of using an A1N interlayer on the active region of a device is examined by investigating a series of GaN/AlGaN quantum well structures. It is observed by WBDF that the a-type dislocations generated at the A1N interlayer form ‘staircase’ structures in the quantum well stack where all dislocation segments are in edge orientation A model is proposed where misfit dislocation segments at each well interface are formed by climb, in contrast to the dislocation glide at the lowest interfa

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20

Wen, Kai-Hsin. "Study of ohmic contact formation on AlGaN/GaN heterostructures." Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-259746.

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It is challenging to achieve low-resistive ohmic contacts to III-nitride semiconductors due to their wide bandgap. A common way to reduce the contact resistance is to recess the ohmic area prior to metallization. In the minimization of the contact resistance, parameters like the recess depth, anneal temperature and design of the metal stack are commonly optimized. In this work, three other approaches have been evaluated. All experiments were performed on AlGaN/GaN heterostructures. The fabricated ohmic contacts were recess etched, metallized with a Ta/Al/Ta stack, and annealed at 550-575◦C.Fir

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21

Paszkiewicz, B., M. Wosko, R. Paszkiewicz, and M. Tlaczala. "Growth and characterization of algan/gan heterostructures for electronic devices and sensors." Thesis, Sumy State University, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20591.

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22

Lee, Jaesun. "Processing and characterization of advanced AlGaN/GaN heterojunction effect transistors." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1158695879.

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23

Fisichella, Gabriele. "Graphene Heterostructures with Wide Bandgap Semiconductors." Doctoral thesis, Università di Catania, 2015. http://hdl.handle.net/10761/3869.

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Graphene (Gr) is a two dimensional material constituted by an atomically thin carbon membrane, characterized by a unique combination of excellent electrical, optical, thermal and mechanical properties. Its main limitation for microelectronic applications is related to the lack of a bandgap, leading to a poor Ion/Ioff ratio when it is considered as channel material for MOSFET devices. Novel device concepts based on Gr heterostructures with semiconductors are currently under consideration, in order to overcome these limitations. These devices are based on the vertical current transport through G

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24

Broxtermann, Daniel [Verfasser], Angela [Akademischer Betreuer] Rizzi, and Andreas [Akademischer Betreuer] Hangleiter. "Towards high electron mobility in Gan(0001) based InGaN and AlGaN heterostructures / Daniel Broxtermann. Gutachter: Angela Rizzi ; Andreas Hangleiter. Betreuer: Angela Rizzi." Göttingen : Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2011. http://d-nb.info/1043665374/34.

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25

Lee, Sunyoung. "Distributed effects in power transistors and the optimization of the layouts of AlGaN/GaN HFETs." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1149095133.

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26

Bradley, Shawn Todd. "Investigation of AlGaN films and nickel/AlGaN Schottky diodes using depth-dependent cathodoluminescence spectroscopy and secondary ion mass spectrometry." Columbus, Ohio : Ohio State University, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1078329692.

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Thesis (Ph. D.)--Ohio State University, 2004.<br>Title from first page of PDF file. Document formatted into pages; contains xxii, 182 p.; also includes graphics (some col.). Includes abstract and vita. Advisor: Leonard J. Brillson, Dept. of Electrical Engineering. Includes bibliographical references (p. 173-182).

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27

Hong, Y. H., and 洪一航. "The characteristics of AlGaN/GaN heterostructure." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/36918171770845236815.

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碩士<br>長庚大學<br>電子工程研究所<br>94<br>AlGaN/GaN heterostructure field-effect transistors (HFETs) have been a subject of intensive investigation recently and have emerged as attractive candidates for high voltage, high-power operation at microwave frequencies, such as low noise microwave amplifier、 power microwave amplifier、 high temperature devices and power suppliers. In this work, we have grown AlGaN/GaN hetero-structures on Sapphire and Si substrates by Metal Organic Chemical Vapor Deposition (MOVPE) respectively. In order to investigate the effect of Si-doped GaN layers on the performance of AlGa

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28

Wang, Sheng-Chih, and 王勝志. "Electroreflectance spectra of AlGaN/AlN/GaN heterostructure." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/y284p4.

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碩士<br>國立中山大學<br>物理學系研究所<br>96<br>Electroreflectance spectra of AlGaN/AlN/GaN heterostructures were measured at various biased voltages (Vdc). Strengths of the internal electric field in AlGaN (FAlGaN) were evaluated from periods of Franz-Keldysh oscillations (FKOs), which were observed above band-gap energy of AlGaN. The relation between FAlGaN and Vdc exhibits an anomalous behavior, which is different from the previous results of the AlGaN/GaN heterostructure. It agrees with the theoretical result of a Poisson-Schrödinger calculation, which shows that two dimensional electron gas (2DEG) exist

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29

Chang, Hsien-Cheng, and 張憲政. "Investigation of AlGaN/GaN Heterostructure Using Photoluminescence." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/mn98e9.

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碩士<br>國立中山大學<br>物理學系研究所<br>95<br>We study AlGaN/GaN heterostucture using temperature dependent micro-photoluminescence. Detailing its principle, operation process and analysis is to provide usage experiences for posterity''s reference. The experiment''s results emphasize analysis in the photoluminescence spectrum of the GaN in the heterostructure. We believe the peaks 3.486eV, 3.405eV and 3.310eV provided from Free Exciton A, FXA-1LO and FXA-2LO respectively by experience in the cultural heritage.And the fitting result of FXA peak with Gaussian curve shows the major peak is composed by (D0,X),

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30

Chen, Leaf, and 陳力輔. "Studies of AlGaN/GaN Heterostructure Field Effect Transistors." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/32927164481720888716.

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碩士<br>國立交通大學<br>電子工程系所<br>93<br>In this study, we focus on structure characteristics of GaN heterostructure FET Gate recess can change gate position to modify threshold voltage and to optimize device performance.During recess etching, two things are concerned. One is to avoid active layer being over etched. And therefore the etching rate can not be too fast. The other is to avoid gate being over damaged, which causes degradation of device characteristics. In this experiment, we use two different recess etching recipes. One is pure Cl2, which induces gate recess to reach 50A and threshold volt

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31

Shih, Cheng-Feng, and 石正楓. "Studies of AlGaN/GaN Heterostructure Filed Effect Transistors." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/86045226221327897112.

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碩士<br>國立交通大學<br>電子工程系<br>91<br>In this thesis, several AlxGa1-xN/GaN heterostructures with different Al composition, different AlGaN thickness and with/without modulation doping layer were designed to observe how polarization effects influence two dimensional electron gases (2DEG) sheet carrier concentration. Electron transport mechanisms in 2DEG channel were discussed at the same time. We found that both higher Al composition and thicker AlGaN layer would lead to higher polarization effect, which would cause higher 2DEG sheet carrier concentration. At low temperature, electron transport char

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32

Wang, Yung-Chih, and 王勇智. "Design and Fabrication of AlGaN/GaN Heterostructure Field Effect Transistors." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/37899123209476097350.

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碩士<br>國立交通大學<br>電子工程系所<br>95<br>In this thesis, the AlGaN/GaN heterostructure field effect transistors were investigated to achieve high breakdown voltage. Three types of geometry layout: line, ring and square gates, were designed and analyzed. The field-plate design was also used in the three kinds of device layouts to improve the device performance at high voltages. We have successfully fabricated the AlGaN/GaN HEMTs with line, ring, and square gates. Their DC, breakdown and switch characteristics were measured to study the influence of the different geometry layout on device performance. Fo

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33

LIN, CHUN-CHIEH, and 林群傑. "Investigations on AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/7t8jjw.

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碩士<br>逢甲大學<br>電子工程學系<br>106<br>In this dissertation, we fabricate AlGaN/GaN HEMTs with Al2O3 dielectric layer and focus on their properties. Providing the comparison of the characteristics, in this thesis, schottky-gate planar-HFET and schottky-shift-gate planar-HFET have been achieved, including maximum drain-source saturation current density (IDS, max) of 655 mA/mm, 337 mA/mm, and 472 mA/mm, drain-source current density at VGS = 0 V (IDSS0) of 564mA/mm, 242mA/mm, and 275 mA/mm, maximum extrinsic transconductance (gm, max) of 115 mS/mm, 96 mS/mm, and 87 mS/mm, two-terminal off-state gate-drai

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Yuan-FuHua and 華元甫. "AlGaN/GaN Heterostructure with a Ga2O3 Cap Layer Ultraviolet Tri-Band Photodetectors." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/71585462863505389858.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>101<br>In this thesis, the fabrication and analysis of AlGaN/GaN heterostructure with a Ga2O3 cap layer ultraviolet (UV) photodetectors (PDs) were performed. We enhanced the rejection ratios and reduced the dark current by various methods so as to fabricate tri-band UV PDs. First, the growth of β-Ga2O3 layer by furnace oxidation above AlGaN/GaN heterostructure and the fabrication of metal-semiconductor-metal (MSM) dual-band PDs have been reported. The dark current of the PD with a 120-nm-thick β-Ga2O3 layer were 2.05 × 10-9 and 4.50 × 10-8 A under 1 and 10 V app

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Lin, Tien-Kun, and 林天坤. "Photo-CVD SiO2 Layers on AlGaN and AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistor (MOSHFET)." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/87764962774265421974.

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碩士<br>國立雲林科技大學<br>電子與資訊工程研究所碩士班<br>91<br>High quality SiO2 is successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using a D2 lamp as the excitation source. We are verified the high quality SiO2 film by the analysis of the chemical and physical characteristics such as AFM, FTIR, XPS and AES instruments. It is found that the interface state density of Photo-SiO2 is only 1.1�e1011 cm-2eV-1 and the oxide leakage current that is dominated by Poole-Frenkel emission transport mechanism is only~10-7A/cm2 with an applied field of 4 MV/cm. Furthermore,. we confirm the photo-

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36

Wu, Chia-Chun, and 吳家駿. "Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/76547583355347081862.

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碩士<br>國立中山大學<br>物理學系研究所<br>94<br>Electroreflectance spectra of AlGaN/GaN heteostructure were measured for various biased voltage (Vbias). There are Franz-Keldysh oscillations (FKOs) exhibiting above band gap of AlGaN, and strength of electric field of AlGaN (FAlGaN) can be evaluated from periods of the FKOs. A positive polarization charge

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37

Huang, Jian-Jun, and 黃健峻. "GaN/AlGaN Metal-Oxide-Heterostructure FET with a Liquid Phase Deposited Oxide Gate." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/97985883974786128931.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>90<br>The LPD have advantages of low cost and low temperature. And, the oxidation system is simply to operator. In this thesis, we successfully used liquid phase deposited (LPD) to grow silicon oxide layer on GaN/AlGaN device at low temperature (40℃). From that, we obtain a high breakdown electric field and low leakage current MOSHFETs. The deposited rate of LPD is about 50nm/hr. We used chemical properties of Electron Spectroscopy of Chemical Analysis (ESCA) and Auger Electron spectroscopy (AES) to analyze the surface morphologies of oxide layer on GaN. The

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38

Peng, Yu-lin, and 彭玉麟. "Photoreflectance of AlGaN/GaN heterostructure measured by using mercury lamp as pump beam." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/9fn3ch.

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碩士<br>國立中山大學<br>物理學系研究所<br>97<br>Photoreflectance (PR) spectra of a GaN thin film and an AlGaN/GaN heterostructure were measured by using a HeCd laser or a mercury lamp as a pump beam. The wavelengths (λ) of the HeCd laser and the mercury lamp are 325 nm and 253.7 nm, respectively. The energy of the HeCd laser is lower than band-gap energy of AlxGa1-xN (x > 0.2) so that electron-hole pairs cannot be generated in the AlGaN layer. Hence, the PR of the AlGaN was measured by using Argon ion laser (λ=300 nm) or quadrupled Nd:YAG (λ=266 nm) rather than HeCd laser in the previous works. In this work,

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Wei-FanChen and 陳韋帆. "Investigation of AlGaN/GaN Heterostructure Ion-Sensitive Field-Effect-Transistor for pH Sensor Application." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/x2bg7k.

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碩士<br>國立成功大學<br>微電子工程研究所<br>102<br>This thesis focuses on the investigation of AlGaN/GaN heterostructure Ion-Sensitive Field-Effect-Transistors (ISFETs) and their application for pH sensing. This work provides three kinds of methods, which are (NH4)2S2O8 treatment, hydrogen peroxide (H2O2) treatment and Ultrasonic Spray Paralysis Deposition method, to improve the pH sensing characteristics of the conventional AlGaN/GaN ISFETs. For the reason to better understand the chemical composition, oxide layer thickness, surface roughness, hydrophilicity and the variation of sheet concentration and mobil

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Yen-MingHuang and 黃彥明. "Fabrication of GaN/AlGaN Heterostructure Schottky Contact-Type Devices With a NiO Dielectric Layer." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/ef7tp9.

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Prakash, Abijith, and Abijith Prakash. "Electro-Thermal-Mechanical Analysis of AlGaN/GaN Heterostructure Field Effect Transistor with SiO2/Si3N4 Passivation." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/25141440478302112513.

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碩士<br>亞洲大學<br>資訊工程學系碩士班<br>100<br>The potential energy savings are huge: statistics from the US Department of Energy estimate that, by 2025, solid-state lighting such as LEDs could reduce the global amount of electricity used for lighting by 50% and, in the US alone, could eliminate 258 million metric tons of carbon emission, alleviate the need for 133 new power stations, and result in cumulative financial savings of over a hundred billion dollars. LEDs based on GaN, which emits brilliant light when electricity is passed through it, are extremely energy efficient and long lasting. In the UK, l

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Chang, Chia-Ao, and 張家敖. "Epitaxial Growth of AlGaN/GaN/AlGaN Double Heterostructure Field Effect Transistors (DH-FETs) on Silicon (111) Substrates for High Voltage Applications." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/94037934640951774973.

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碩士<br>國立交通大學<br>材料科學與工程學系<br>101<br>GaN shows many superior physical properties such as wide bandgap, high energy barrier, high breakdown field and high carrier velocity. Therefore, conventional AlGaN/GaN HEMTs show characteristics of high current, high breakdown voltage and high operation temperature. Furthermore, conventional AlGaN/GaN HEMTs can be grown on large-sized Si substrate, so the fabrication cost can be reduced significantly. Accordingly, GaN material is a candidate for replacing Si-based devices to become next-generation high-power electronics. If the breakdown voltage can be furt

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Tsai, Ming-Ji, and 蔡明記. "Liquid Phase Deposited Titanium Oxide as the Gate Insulator for AlGaN/GaN Heterostructure Field Effect Transistors." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/83306181493570885714.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>96<br>In this study, we demonstrate that TiO2 film can be deposited on GaN material through liquid phase deposition (LPD). The liquid phase deposition system is advantageously cost effective and simple compared to other deposition systems. A uniform film can be deposited on GaN material only through immersion in a solution at a low temperature (from 30-60℃) without any assisted energy source. Here, the liquid-phase AlGaN/GaN HFETs deposited TiO2 as gate insulators were successfully fabricated. The maximum drain current density for the conventional HFETs was at 3

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Chen, Kui-Ming, and 陳奎銘. "Effective Electron Temperature and Hot-Electron Effect in Magnetoresistance Oscillations in GaN/AlGaN Heterostructure at Low Temperatures." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/63561310728034876065.

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碩士<br>國立嘉義大學<br>光電暨固態電子研究所<br>95<br>Recently, III-V semiconductor materials (InN, GaN, AlN for example) were employed more and more popularly. The most interesting of them is GaN/AlGaN heterostructures. They have been employed in blue LEDs, high power microwave devices, high frequency field effect transistors. We would like to characterize their physic properties more clearly. The samples of this thesis are fabricated on Si substrate. There still exist some diffucult problems to develop good-quality GaN thin films on Si substrate. There are large lattice mismatch (~17%) and thermal mismatch (~

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Ko, Tsun-Kai, and 柯淙凱. "Electrical Characteristics and Low Frequency Noise Investigations of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/29983823911507132084.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>92<br>In this thesis, high quality SiO2 layer was successfully deposited onto AlGaN as the dielectric layer for our AlGaN/GaN MOS-HFETs by photo-chemical vapor deposition (Photo-CVD) using D2 lamp as the excitation source. Compared with conventional AlGaN/GaN MES-HFETs with similar structure, the gate leakage current can be reduced by more than five orders of magnitude even at elevated temperature. With Vds=20V and Vg=-8V (cut-off), the leakage current at room temperature was about 6.46 mA/mm, which is almost the same with that (6.48mA/mm) at 300℃. Such a result

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Lin, Shun-Kuan, and 林舜寬. "Study of AlGaN/GaN Metal-Oxide-Heterostructure FET with a Liquid Phase Deposited Oxide as Gate Dielectric." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/98337952195127127988.

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碩士<br>國立成功大學<br>電機工程學系碩博士班<br>92<br>An efficient and low cost approach for depositing uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) that is near room temperature will be described. The deposited rate of SiO2 is about 55nm/hr. at 40 ℃. Breakdown electric field as high as 7.3MV/cm and leakage current as low as 10-7A/cm2 at 0.9MV/cm for the deposited oxide layers can be achieved. The trap density of SiO2 on GaN or AlGaN is about 3×1011cm2eV-1. Auger Electron Spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) will be used to characterize the oxide properties. Se

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Wong, Yuen-Yee, and 黃延儀. "Epitaxial Growth of AlGaN/GaN Heterostructure by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/46131051372301340245.

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博士<br>國立交通大學<br>材料科學與工程學系<br>99<br>AlGaN/GaN heterostructure for the high electron mobility transistor applications were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on the sapphire substrates. The effects of AlN buffer growth parameters on the defect structure on GaN film were first investigated. For GaN film grown on lower-temperature buffer, the density of screw threading dislocation (TD) was increased while the density of edge TD was decreased. The rough AlN surface helped to bend the growth direction of edge TDs and then reduced the dislocation density through recombination an

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Heidelberger, Gero [Verfasser]. "Untersuchung von"high-k" Materialien als alternative Dielektrika für AlGaN/GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) = Investigation of "high-k" materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET) / vorgelegt von Gero Heidelberger." 2009. http://d-nb.info/996800182/34.

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"Efficient Schrödinger-Poisson Solvers for Quasi 1D Systems That Utilize PETSc and SLEPc." Master's thesis, 2020. http://hdl.handle.net/2286/R.I.63056.

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abstract: The quest to find efficient algorithms to numerically solve differential equations isubiquitous in all branches of computational science. A natural approach to address this problem is to try all possible algorithms to solve the differential equation and choose the one that is satisfactory to one's needs. However, the vast variety of algorithms in place makes this an extremely time consuming task. Additionally, even after choosing the algorithm to be used, the style of programming is not guaranteed to result in the most efficient algorithm. This thesis attempts to address the same pro

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Kun-Ta, Wu. "Electrical transport in AlGaN/GaN heterostructures." 2005. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2007200523291100.

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