Log in

Relevant bibliographies by topics / AlGaN/GaN heterostructure / Journal articles

To see the other types of publications on this topic, follow the link: AlGaN/GaN heterostructure.

Journal articles on the topic 'AlGaN/GaN heterostructure'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'AlGaN/GaN heterostructure.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Maeda, Narihiko, Tadashi Saitoh, Kotaro Tsubaki, Toshio Nishida, and Naoki Kobayashi. "Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 362–68. http://dx.doi.org/10.1557/s1092578300004518.

Full text

Abstract:

Two-dimensional electron gas transport properties have been investigated in nitride double-heterostructures. A striking effect has been observed that the two-dimensional electron gas mobility has been drastically enhanced in the AlGaN/GaN/AlGaN double-heterostructure, compared with that in the conventional AlGaN/GaN single-heterostructure. The observed mobility enhancement has been shown to be mainly due to the enhanced polarization-induced electron confinement in the double-heterostructure, and additionally due to the improvement of the interface roughness in the structure. Device operation o

APA, Harvard, Vancouver, ISO, and other styles

2

Gladysheva, Nadezhda B., Vadim V. Gruzdov, Yurii V. Kolkovskii, Yulii A. Kontsevoy, and Evgenii F. Pevtsov. "Control of yellow photoluminescence in AlGaN/GaN heterostructures." Modern Electronic Materials 5, no. (2) (2019): 87–89. https://doi.org/10.3897/j.moem.5.2.51391.

Full text

Abstract:

Photoluminescence with the peak corresponding to yellow color of the visible spectrum (so-called yellow luminescence) originates from deep levels in the GaN buffer layers of heterostructures and depends on heterostructure growth conditions. In turn deep levels affect the resistance of Ohmic contacts of microwave transistors fabricated from these heterostructures. This determines the reliability of GaN microwave transistor operation. Two types of units for control of photoluminescence with the peak in the yellow visible spectral region have been designed with the aim to control the quality of A

APA, Harvard, Vancouver, ISO, and other styles

3

Gladysheva, Nadezhda B., Vadim V. Gruzdov, Yurii V. Kolkovskii, Yulii A. Kontsevoy, and Evgenii F. Pevtsov. "Control of yellow photoluminescence in AlGaN/GaN heterostructures." Modern Electronic Materials 5, no. 2 (2019): 87–89. http://dx.doi.org/10.3897/j.moem.5.2.51391.

Full text

Abstract:

Photoluminescence with the peak corresponding to yellow color of the visible spectrum (so-called yellow luminescence) originates from deep levels in the GaN buffer layers of heterostructures and depends on heterostructure growth conditions. In turn deep levels affect the resistance of Ohmic contacts of microwave transistors fabricated from these heterostructures. This determines the reliability of GaN microwave transistor operation. Two types of units for control of photoluminescence with the peak in the yellow visible spectral region have been designed with the aim to control the quality of A

APA, Harvard, Vancouver, ISO, and other styles

4

Yusuf, Yusnizam, Muhammad Esmed Alif Samsudin, Muhamad Ikram Md Taib, et al. "Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT." Crystals 13, no. 1 (2023): 90. http://dx.doi.org/10.3390/cryst13010090.

Full text

Abstract:

This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN layer was grown via two-step growth. In the first step, the V/III ratio was applied at 1902 and then at 3046 in the second step. The FWHMs of the XRD (002) and (102) peaks of the GaN layer were around 205 arcsec ((002) peak) and 277 arcsec ((102) peak). Moreover, the surface of the GaN layer showed clear evidence of step flows, which resulted

APA, Harvard, Vancouver, ISO, and other styles

5

Michel, A., D. Hanser, R. F. Davis, et al. "Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 605–11. http://dx.doi.org/10.1557/s1092578300004828.

Full text

Abstract:

Acceptor (Mg)-doped AlGaN/GaN heterostructures were grown via MOVPE and compared to similarly doped GaN standard films grown in the same reactor. Chemical analysis of the films, via secondary ion mass spectrometry (SIMS), revealed comparable Mg concentrations of ∼2×1019 atoms/cm3 in all films. The Mg-doped GaN standard sample had a sheet conductance of 7-μS compared to a sheet conductance of 20-μS for an AlGaN/GaN heterostructure. The sheet conductance of the AlGaN/GaN heterostructures was higher due to piezoelectric acceptor doping and modulation doping effects in addition to conventional Mg

APA, Harvard, Vancouver, ISO, and other styles

6

Hirose, Kotaro, Norimichi Chinone, and Yasuo Cho. "Visualization of Polarization and Two Dimensional Electron Gas Distribution in AlGaN/GaN Heterostructure Using Scanning Nonlinear Dielectric Microscopy." Materials Science Forum 858 (May 2016): 1182–85. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1182.

Full text

Abstract:

AlGaN/GaN heterostructure was observed using scanning nonlinear dielectric microscopy, which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which was sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Moreover, two dimensional electron gas was observed at the AlGaN/GaN interface. These results show that scanning nonlinear dielectric microscopy is useful method for evaluation of two dimensional electron gas profile and polarization profile in AlGaN/GaN hetero

APA, Harvard, Vancouver, ISO, and other styles

7

TAN, GUIYING, and YONGBO SU. "DEPENDENCE OF CAPACITANCE–VOLTAGE CHARACTERISTICS OF NOMINALLY UNDOPED AlGaN/GaN HETEROSTRUCTURES ON SEVERAL KEY PARAMETERS OF THE MATERIALS." Modern Physics Letters B 25, no. 15 (2011): 1293–302. http://dx.doi.org/10.1142/s0217984911026267.

Full text

Abstract:

Nominally undoped AlGaN / GaN heterostructure samples were grown on c-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition, and their material properties, such as crystal quality, roughness of heterointerface, thickness and Al mole fraction of AlGaN barrier layer, were identified by high resolution X-ray diffraction (HRXRD). Mercury-probe capacitance–voltage (C–V) measurements were carried out to investigate the carrier distribution in the heterostructures and accurately evaluate the sheet carrier concentration of two-dimensional electron gas (2DEG) formed at AlGaN

APA, Harvard, Vancouver, ISO, and other styles

8

Rathore, Saad Ullah, Sima Dimitrijev, Hamid Amini Moghadam, and Faisal Mohd-Yasin. "Equations for the Electron Density of the Two-Dimensional Electron Gas in Realistic AlGaN/GaN Heterostructures." Nanomanufacturing 1, no. 3 (2021): 171–75. http://dx.doi.org/10.3390/nanomanufacturing1030012.

Full text

Abstract:

This paper presents equations for the electron density of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures in three realistic scenarios: (1) AlGaN/GaN heterostructure with surface exposed to ambient with mobile ions, (2) metal gate deposited on the AlGaN surface, and (3) a thick dielectric passivation layer on the AlGaN surface. To derive the equations, we analyzed these scenarios by applying Gauss’s law. In contrast to the idealistic models, our analysis shows that the 2DEG charge density is proportional to the difference between spontaneous polarization of AlGaN and GaN,

APA, Harvard, Vancouver, ISO, and other styles

9

Gaevski, Mikhail, Jianyu Deng, Grigory Simin, and Remis Gaska. "500 °C operation of AlGaN/GaN and AlInN/GaN Integrated Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (2014): 000084–89. http://dx.doi.org/10.4071/hitec-tp16.

Full text

Abstract:

High-temperature technology platform has been developed utilizing planar III-nitride heterostructures approach. The record high electron concentration and mobility in 2DEG channel of III-nitride devices result in very high operation speed and are remarkably stable within a broad temperature range, allowing device operation above 500 °C. The developed IC technology is based on three key elements: (1) exceptional quality III-nitride heterostructure with very high carrier concentration and mobility that enables IC fast operation in a broad temperature range; (2) heterostructure field effect trans

APA, Harvard, Vancouver, ISO, and other styles

10

Liu, Yanli, Dunjun Chen, Kexiu Dong, et al. "Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure." Advances in Condensed Matter Physics 2018 (2018): 1–4. http://dx.doi.org/10.1155/2018/1592689.

Full text

Abstract:

Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron g

APA, Harvard, Vancouver, ISO, and other styles

11

Fisichella, Gabriele, Giuseppe Greco, Fabrizio Roccaforte, and Filippo Giannazzo. "Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale." Nanoscale 6, no. 15 (2014): 8671–80. http://dx.doi.org/10.1039/c4nr01150c.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Hao, L. Z., Jun Zhu, and Y. R. Li. "Integration between LiNbO₃ Ferroelectric Film and AlGaN/GaN System." Materials Science Forum 687 (June 2011): 303–8. http://dx.doi.org/10.4028/www.scientific.net/msf.687.303.

Full text

Abstract:

LiNbO3 film (LNO)/AlGaN/GaN heterostructure was fabricated epitaxially. The preferable C+ oriented domains in LNO film lead to the formation of the spontaneous ferroelectric polarization. As a result, the sheet electron concentration of the 2DEG (ns) decreased from 1.13×1013 cm-2 to 1.04×1013 cm-2 when a LNO film deposited on the AlGaN/GaN. The ns decreased nonlinearly with decreasing the temperature. Additionally, the electron mobility for the LNO/AlGaN/GaN heterostructure decreased greatly compared with that for AlGaN/GaN heterostructure, which was caused by the non-uniform domain structure

APA, Harvard, Vancouver, ISO, and other styles

13

RUMYANTSEV, SERGEY L., NEZIH PALA, MICHAEL S. SHUR, et al. "GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES." International Journal of High Speed Electronics and Systems 14, no. 01 (2004): 175–95. http://dx.doi.org/10.1142/s0129156404002296.

Full text

Abstract:

AlGaN thin films and Schottky barrier Al 0.4 Ga 0.6 N diodes exhibit generation-recombination (GR) noise with activation energies of 0.8 - 1 eV. GR noise in AlGaN / GaN Heterostructure Field Effect transistors (HFETs) corresponds to activation energies in the range from 1 - 3 meV to 1 eV. No GR noise is observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN / InGaN / GaN Double Heterostructure Field Effect Transistors (DHFETs). Local levels responsible for the GR noise in HFETs and DHFETs might be located in AlGaN

APA, Harvard, Vancouver, ISO, and other styles

14

Tonisch, Katja, Wael Jatal, Ralf Granzner, et al. "2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates." Materials Science Forum 645-648 (April 2010): 1219–22. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1219.

Full text

Abstract:

We present the realization of high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures grown on silicon substrates using a SiC transition layer. The growth of AlGaN/GaN heterostructures on Si (111) was performed using metalorganic chemical vapour deposition (MOCVD). The (111) SiC transition layer was realized by low pressure CVD and prevented Ga-induced meltback etching and Si-outdiffusion in the subsequent MOCVD growth. The two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface showed an electron sheet density of 1.5x1013 cm-3 and a mobility of 870 cm²/Vs

APA, Harvard, Vancouver, ISO, and other styles

15

Liu, Yanli, Xifeng Yang, Dunjun Chen, Hai Lu, Rong Zhang, and Youdou Zheng. "Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering." Advances in Condensed Matter Physics 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/918428.

Full text

Abstract:

The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. T

APA, Harvard, Vancouver, ISO, and other styles

16

Kang, He, Hui-Jie Li, Shao-Yan Yang, et al. "Comparison of alloy disorder scatterings in Ga- and N-polar AlGaN/GaN heterostructures." International Journal of Modern Physics B 32, no. 02 (2018): 1850002. http://dx.doi.org/10.1142/s0217979218500029.

Full text

Abstract:

The two-dimensional electron gas (2DEG) mobilities limited by alloy disorder (AD) scattering in both Ga- and N-polar AlGaN/GaN heterostructures are investigated. It was found that the AD scattering limited electron mobility in N-polar heterostructures is on the order of 103–104 cm2/Vs, which is comparable to the optical phonon scattering at room-temperature. In comparison, the AD scattering in Ga-polar samples is much less important. Moreover, the electron mobility decreases with the 2DEG density in the Ga-polar device but shows a reverse trend in the N-polar counterpart. This is found to be c

APA, Harvard, Vancouver, ISO, and other styles

17

Lari, L., T. Walther, K. Black, et al. "GaN, AlGaN, HfO2based radial heterostructure nanowires." Journal of Physics: Conference Series 209 (February 1, 2010): 012011. http://dx.doi.org/10.1088/1742-6596/209/1/012011.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Greco, Giuseppe, Ferdinando Iucolano, Filippo Giannazzo, et al. "Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs." Materials Science Forum 858 (May 2016): 1170–73. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1170.

Full text

Abstract:

In this paper, the electrical properties of different metal/p-GaN contacts (Ti/Al, TiN/Ti/Al and Ni/Au) have been investigated to get a deeper understanding of the behavior of p-GaN/AlGaN/GaN heterostructures for normally-off HEMTs. In particular, the study of the temperature dependent current-voltage characteristics allowed to identify the dominant carrier transport mechanism at the metal/p-GaN interface (Thermionic Field Emission). From the fit of the experimental current-voltage data it was possible to determine the Schottky barrier height values for the three systems, 2.08 eV (Ti/Al), 1.57

APA, Harvard, Vancouver, ISO, and other styles

19

Bidnyk, S., J. B. Lam, B. D. Little, et al. "Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 661–67. http://dx.doi.org/10.1557/s1092578300004907.

Full text

Abstract:

We report on an experimental study of microstructure-based lasing in an optically pumped GaN/AlGaN separate confinement heterostructure (SCH). We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. The spacing, directionality, and far-field patterns of the lasing modes are shown to be the result of microcavities that were naturally formed in the structures due to strain relaxation. The temperature sensitivity of the lasing wavelength was found to be twice as low as that of bulk-like GaN films. Based on th

APA, Harvard, Vancouver, ISO, and other styles

20

Pharkphoumy, Sakhone, Vallivedu Janardhanam, Tae-Hoon Jang, Kyu-Hwan Shim, and Chel-Jong Choi. "Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates." Electronics 12, no. 4 (2023): 1049. http://dx.doi.org/10.3390/electronics12041049.

Full text

Abstract:

Herein, the performance of AlGaN/GaN high-electron-mobility transistor (HEMT) devices fabricated on Si and sapphire substrates is investigated. The drain current of the AlGaN/GaN HEMT fabricated on sapphire and Si substrates improved from 155 and 150 mA/mm to 290 and 232 mA/mm, respectively, at VGS = 0 V after SiO2 passivation. This could be owing to the improvement in the two-dimensional electron gas charge and reduction in electron injection into the surface traps. The SiO2 passivation resulted in the augmentation of breakdown voltage from 245 and 415 V to 400 and 425 V for the AlGaN/GaN HEM

APA, Harvard, Vancouver, ISO, and other styles

21

RUMYANTSEV, S. L., N. PALA, M. S. SHUR, et al. "LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS." Fluctuation and Noise Letters 01, no. 04 (2001): L221—L226. http://dx.doi.org/10.1142/s0219477501000469.

Full text

Abstract:

The dependence of the 1/f noise on 2D electron concentration in the channel n Ch of AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors has been studied and compared. The dependencies of Hooge parameter αCh for the noise sources located in the channel of the transistors on sheet electron concentration are found identical for both types of devices. The increase of the Hooge parameter αCh with the decrease of the channel concentration observed in both types of devices confirms that the noise sources are located in the region u

APA, Harvard, Vancouver, ISO, and other styles

22

Wang, Chong, Xin Wang, Xuefeng Zheng, et al. "GaN‐based FinFET with double‐channel AlGaN/GaN heterostructure." Electronics Letters 54, no. 5 (2018): 313–15. http://dx.doi.org/10.1049/el.2017.3934.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Kim, Zin-Sig, Hyung Seok Lee, Sung-Bum Bae, Eun Soo Nam, and Jong-Won Lim. "Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures." Journal of Nanoscience and Nanotechnology 20, no. 7 (2020): 4170–75. http://dx.doi.org/10.1166/jnn.2020.17783.

Full text

Abstract:

Fabrication of normally-off field effect transistors (FETs) possessed uniform turn-on threshold voltage (Vth) is of special interests. In this work, they were fabricated using dry etching recess techniques under the gate region, with dry etching conditions of extremely low rate. We report how the recess depth under the gate area induced the Vth shift of normally-off FETs on AlGaN/GaN heterostructure, which were fabricated with a 1.5 nm/min etching rate. Chlorine-based inductively coupled plasma (ICP) was applied to perform the etching process for the AlGaN/GaN heterostructure. Devices were fab

APA, Harvard, Vancouver, ISO, and other styles

24

JIANG, Z. S., W. ZHANG, Q. JI, et al. "TEMPERATURE DEPENDENCE OF RELAXATION IN AlGaN/GaN HETEROSTRUCTURES." Surface Review and Letters 14, no. 04 (2007): 837–40. http://dx.doi.org/10.1142/s0218625x07010135.

Full text

Abstract:

Effects of Si 3 N 4 passivation layer on the lattice strain of Al 0.22 Ga 0.78 N layer with the thickness of 100 nm has been studied by in situ X-ray diffraction by the temperature range of 25°C–550°C. Results show that the temperature dependence of the strain relaxations can be separated into three linear regions. After passivation, an additional in-plane tensile strain is observed. The residual tensile strain increases with increasing temperature at low temperature, while at higher temperature the residual tensile strain decreases slightly. There is clear influence when a passive layer is de

APA, Harvard, Vancouver, ISO, and other styles

25

Wang, Ding, Ping Wang, Minming He, et al. "Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT." Applied Physics Letters 122, no. 9 (2023): 090601. http://dx.doi.org/10.1063/5.0143645.

Full text

Abstract:

In this Letter, we demonstrated fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high electron mobility transistors (HEMTs). Clean and atomically sharp heterostructure interfaces were obtained by utilizing molecular beam epitaxy. The fabricated ferroelectric gate HEMTs showed counterclockwise hysteretic transfer curves with a wide threshold voltage tuning range of 3.8 V, a large ON/OFF ratio of 3 × 107, and reconfigurable output characteristics depending on the poling conditions. The high quality ferroelectric gate stack and effective ferroelectric polarization coupling lead to improved sub

APA, Harvard, Vancouver, ISO, and other styles

26

Fisichella, Gabriele, Giuseppe Greco, Salvatore di Franco, et al. "Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures." Materials Science Forum 858 (May 2016): 1137–40. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1137.

Full text

Abstract:

This paper presents a study of the vertical current transport in a graphene (Gr) heterostructure with AlxGa1-xN/GaN, which represent the main building block of a novel high frequency device, the hot electron transistor (HET) with Gr base. The morphological and electrical properties of this heterostructures have been investigated at nanoscale by atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). In particular, local current-voltage measurements by the CAFM probe revealed the formation of a Schottky contact with low barrier height (∼0.41 eV) and excellent lateral unifor

APA, Harvard, Vancouver, ISO, and other styles

27

Егоркин, В. И., А. А. Зайцев, В. Е. Земляков, В. В. Капаев та О. Б. Кухтяева. "GAN/ALGAN ГЕТЕРОСТРУКТУРНЫЙ ТРАНЗИСТОР НОРМАЛЬНОЗАКРЫТОГО ТИПА С P-ЗАТВОРОМ ДЛЯ ВЫСОКОВОЛЬТНЫХ ПРИБОРОВ". NANOINDUSTRY Russia 96, № 3s (2020): 133–36. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.133.136.

Full text

Abstract:

Представлено моделирование нормально-закрытого транзистора на основе гетероструктуры p-GaN/AlN/AlGaN/ AlN/GaN, рассматриваются зонные диаграммы и зависимости концентрации носителей заряда в канале от конструкции гетероструктуры. Основной целью является создание нормально-закрытых транзисторов для применения в силовой электронике. Продемонстрирована возможность получения таких транзисторов. The article demonstrates simulation of normally-off transistor based on heterostructure p-GaN/AlN/AlGaN/AlN/GaN. The band diagrams and dependences of channel carrier density on heterostructure parameters hav

APA, Harvard, Vancouver, ISO, and other styles

28

Yunik, A. D., and A. H. Shydlouski. "Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas." Doklady BGUIR 20, no. 7 (2022): 12–19. http://dx.doi.org/10.35596/1729-7648-2022-20-7-12-19.

Full text

Abstract:

Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p-GaN and AlGaN in AlGaN/GaN and p-GaN/AlGaN/GaN heterostructures has been established by laser interferometry and scanning electron microscopy methods due to the changes in refractive indices and etching rates. During inductively coupled plasma reactive ion etching of GaN and p-GaN layers, the intensity of the reflected signal changes according to

APA, Harvard, Vancouver, ISO, and other styles

29

Shatalov, M., G. Simin, Jianping Zhang, et al. "GaN/AlGaN p-channel inverted heterostructure JFET." IEEE Electron Device Letters 23, no. 8 (2002): 452–54. http://dx.doi.org/10.1109/led.2002.801295.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Gao, Kuang Hong, Xiao Rong Ma, Ding Bang Zhou, et al. "Magnetotransport property of graded AlGaN/GaN heterostructure." Superlattices and Microstructures 135 (November 2019): 106262. http://dx.doi.org/10.1016/j.spmi.2019.106262.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Sawaki, N., X. X. Han, Y. Honda, and M. Yamaguchi. "Percolation transport in an AlGaN/GaN heterostructure." Journal of Physics: Conference Series 193 (November 1, 2009): 012012. http://dx.doi.org/10.1088/1742-6596/193/1/012012.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Zhao, G. Y., H. Ishikawa, T. Egawa, T. Jimbo, and M. Umeno. "Electron mobility on AlGaN/GaN heterostructure interface." Physica E: Low-dimensional Systems and Nanostructures 7, no. 3-4 (2000): 963–66. http://dx.doi.org/10.1016/s1386-9477(00)00097-7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Ikki, Hiromichi, Yasuhiro Isobe, Daisuke Iida, et al. "AlGaN/GaInN/GaN heterostructure field-effect transistor." physica status solidi (a) 208, no. 7 (2011): 1614–16. http://dx.doi.org/10.1002/pssa.201001153.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Grenier, Vincent, Sylvain Finot, Lucie Valera, Joël Eymery, Gwénolé Jacopin, and Christophe Durand. "UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures." Applied Physics Letters 121, no. 13 (2022): 131102. http://dx.doi.org/10.1063/5.0101591.

Full text

Abstract:

Core-shell GaN/AlGaN multiple quantum wells (MQWs) embedded in a p–n junction are integrated on the upper part of GaN microwires grown by silane-assisted metal organic vapor phase epitaxy. Dispersed wires are then contacted by electron beam induced deposition for fabrication of single wire UV-LED devices. Rectifying diode-like behavior is first demonstrated for both GaN and GaN/AlGaN p-n junctions without a MQW active region. A weak leakage current in the GaN/AlGaN core-shell heterostructure is attributed to an additional conduction path along wire sidewalls. Electroluminescence at 340 nm in U

APA, Harvard, Vancouver, ISO, and other styles

35

Liu, Honghui, Zhiwen Liang, Chaokun Yan, et al. "AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer." Advances in Condensed Matter Physics 2022 (April 6, 2022): 1–7. http://dx.doi.org/10.1155/2022/5885992.

Full text

Abstract:

The AlGaN/GaN Schottky barrier diodes (SBDs) working as high-power mixer and multiplier show great potential in millimeter wave (MMW) field owing to their high breakdown voltage. Nevertheless, its further application is severely limited by large reverse leakage current (Jr) since the two-dimensional electron gas (2DEG) channel is hard to be pinched off at low voltage. To address this limitation, a graded AlGaN/GaN heterostructure is introduced to extend the 2DEG channel into a quasi-three-dimensional electron slab. By comparing the fixed Al composition AlGaN/GaN SBD, Jr of the graded AlGaN/GaN

APA, Harvard, Vancouver, ISO, and other styles

36

Egorkin, V. I., V. A. Bespalov, A. A. Zaitsev, V. E. Zemlyakov, V. V. Kapaev, and O. B. Kukhtyaeva. "Normally-off p-Gate Transistor Based on AlGaN/GaN Heterostructure." Proceedings of Universities. Electronics 25, no. 5 (2020): 391–401. http://dx.doi.org/10.24151/1561-5405-2020-25-5-391-401.

Full text

Abstract:

The GaN based devices with respect to most parameters exceed the devices based on traditional semiconductor materials. The AlGaN-transistors are the devices, operating in the depletion mode. For most applications it is necessary to implement the operating mode E, when the current in the channel is closed at zero gate voltage. In this paper the novel method namely using the p-GaN layer under the gate has been considered. The plasma-chemical removal of p-GaN layer in the non-gated active region has been chosen as a formation method of this layer. In this case the challenges, namely the non-unifo

APA, Harvard, Vancouver, ISO, and other styles

37

Hsiao, Yu-Lin, Chia-Ao Chang, Edward Yi Chang, et al. "Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates." Applied Physics Express 7, no. 5 (2014): 055501. http://dx.doi.org/10.7567/apex.7.055501.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Lee, Jae-Hoon, and Jung-Hee Lee. "Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate." Advances in Materials Science and Engineering 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/290646.

Full text

Abstract:

A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111) substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET), fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 12

APA, Harvard, Vancouver, ISO, and other styles

39

Asif Khan, M., J. W. Yang, W. Knap, et al. "GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates." Applied Physics Letters 76, no. 25 (2000): 3807–9. http://dx.doi.org/10.1063/1.126788.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Li, Zixuan, V. I. Oleshko, and L. V. Vorobjeva. "Luminescence control of LED heterostructures Grown by method metalorganic vapor phase epitaxy on sapphire." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 11 (2022): 77–81. http://dx.doi.org/10.17223/00213411/65/11/77.

Full text

Abstract:

The paper presents the results of spectral and cardinal characteristics of AlGaN/GaN and InGaN/GaN LED heterostructure pulsed cathodes and photoluminescence grown on sapphire by metal organic vapor phase epitaxy are introduced. The effects of high current electron beam energy density on the luminescence spectra and amplitude characteristics of heterostructures are studied. The spatial distribution of fluorescence characteristics on the wafer surface was studied. It is found that in InGaN/GaN heterostructures, the maxim shifts of stimulated cathodoluminescence spectra measured at different poin

APA, Harvard, Vancouver, ISO, and other styles

41

Kuball, M., M. Benyoucef, F. H. Morrissey, and C. T. Foxon. "Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 950–56. http://dx.doi.org/10.1557/s1092578300005317.

Full text

Abstract:

We report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN l

APA, Harvard, Vancouver, ISO, and other styles

42

Albrecht, J. D., P. P. Ruden, and M. G. Ancona. "New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 640–46. http://dx.doi.org/10.1557/s1092578300004877.

Full text

Abstract:

A new model is used to examine the DC output characteristics of AlGaN/GaN heterostructure field effect transistors. The model is based on the charge-control/gradual-channel approximation and takes into account the non-linear current vs. voltage characteristics of the ungated AlGaN/GaN heterostructure channel regions. The model also includes thermal effects associated with device self-heating. For the power dissipation levels considered for many applications, the thermal degradation of the carrier drift velocity is shown to cause a negative output conductance in saturation. The temperature is i

APA, Harvard, Vancouver, ISO, and other styles

43

Enisherlova, Kira L., Lev A. Seidman, Ella M. Temper, and Yuliy A. Kontsevoy. "Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures." Modern Electronic Materials 7, no. 2 (2021): 63–71. http://dx.doi.org/10.3897/j.moem.7.2.73293.

Full text

Abstract:

The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasma before dielectric deposition and HF biasing during treatment on the parameters of the С–V and I–V curves of SiNx/АlGaN/GaN structures has been analyzed. We show that films with nitrogen to silicon concentration ratios of 60 and 40% and a high oxygen content exhibit a decrease in the positive fixed

APA, Harvard, Vancouver, ISO, and other styles

44

Im, Ki-Sik, Mallem Siva Pratap Reddy, Jinseok Choi, et al. "Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors." Journal of Nanoscience and Nanotechnology 20, no. 7 (2020): 4282–86. http://dx.doi.org/10.1166/jnn.2020.17784.

Full text

Abstract:

We investigate the DC, C–V, and pulse performances in GaN-based nanowire gate-all-around (GAA) transistors with two kinds of geometry: one is AlGaN/GaN heterostructure with two dimensional electron gas (2DEG) channel and the other is only GaN layer without 2DEG channel. From I–V and C–V curves, the fabricated GaN nanowire GAA transistor with AlGaN layer clearly exhibits normally-on operation with negative threshold voltage (Vth) due to the existence of 2DEG channel on the trapezoidal shaped GaN nanowire. On the other hand, the GaN nanowire GAA transistor without AlGaN layer presents a positive

APA, Harvard, Vancouver, ISO, and other styles

45

Kamiyama, Satoshi, Motoaki Iwaya, Nobuaki Hayashi, et al. "Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure." Journal of Crystal Growth 223, no. 1-2 (2001): 83–91. http://dx.doi.org/10.1016/s0022-0248(00)01017-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Enisherlova, Kira L., Lev A. Seidman, Ella M. Temper, and Yuliy A. Kontsevoy. "Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures." Modern Electronic Materials 7, no. (2) (2021): 63–71. https://doi.org/10.3897/j.moem.7.2.73293.

Full text

Abstract:

The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiN<sub>x</sub> film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasma before dielectric deposition and HF biasing during treatment on the parameters of the С–V and I–V curves of SiN<sub>x</sub>/АlGaN/GaN structures has been analyzed. We show that films with nitrogen to silicon concentration ratios of 60 and 40% and a high oxygen content exhibit a decrease

APA, Harvard, Vancouver, ISO, and other styles

47

Boratyński, B., B. Paszkiewicz, R. Paszkiewicz, and M. Tłaczała. "AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation." Acta Physica Polonica A 116, no. 5 (2009): 800–805. http://dx.doi.org/10.12693/aphyspola.116.800.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Shur, Michael S., and M. Asif Khan. "AlGaN/GaN doped channel heterostructure field effect transistors." Physica Scripta T69 (January 1, 1997): 103–7. http://dx.doi.org/10.1088/0031-8949/1997/t69/015.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Chikhaoui, W., J. M. Bluet, P. Girard, et al. "Deep levels investigation of AlGaN/GaN heterostructure transistors." Physica B: Condensed Matter 404, no. 23-24 (2009): 4877–79. http://dx.doi.org/10.1016/j.physb.2009.08.231.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Enisherlova, K. L., V. S. Kulikauskas, V. V. Zatekin, T. F. Rusak, N. B. Gladysheva, and I. I. Razgulyaev. "AlGaN/GaN heterostructure study using Rutherford backscattering spectrometry." Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques 5, no. 4 (2011): 626–35. http://dx.doi.org/10.1134/s1027451011070093.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!