Relevant bibliographies by topics / Area-selective atomic layer deposition

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'Area-selective atomic layer deposition'

Author: Grafiati
Published: 4 June 2021
Last updated: 27 July 2025

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Journal articles on the topic "Area-selective atomic layer deposition"

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Kvalvik, Julie Nitsche, Jon Borgersen, Per-Anders Hansen, and Ola Nilsen. "Area-selective atomic layer deposition of molybdenum oxide." Journal of Vacuum Science & Technology A 38, no. 4 (2020): 042406. http://dx.doi.org/10.1116/6.0000219.

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Coffey, Brennan M., Edward L. Lin, Pei-Yu Chen, and John G. Ekerdt. "Area-Selective Atomic Layer Deposition of Crystalline BaTiO3." Chemistry of Materials 31, no. 15 (2019): 5558–65. http://dx.doi.org/10.1021/acs.chemmater.9b01271.

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Sinha, Ashwini, Clifford Henderson, and Dennis W. Hess. "Area Selective Atomic Layer Deposition of Titanium Dioxide." ECS Transactions 3, no. 15 (2019): 233–41. http://dx.doi.org/10.1149/1.2721492.

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Bonvalot, Marceline, Christophe Vallée, Cédric Mannequin, et al. "Area selective deposition using alternate deposition and etch super-cycle strategies." Dalton Transactions 51, no. 2 (2022): 442–50. http://dx.doi.org/10.1039/d1dt03456a.

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Song, Seung Keun, Holger Saare, and Gregory N. Parsons. "Integrated Isothermal Atomic Layer Deposition/Atomic Layer Etching Supercycles for Area-Selective Deposition of TiO2." Chemistry of Materials 31, no. 13 (2019): 4793–804. http://dx.doi.org/10.1021/acs.chemmater.9b01143.

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Vos, Martijn F. J., Sonali N. Chopra, Marcel A. Verheijen, et al. "Area-Selective Deposition of Ruthenium by Combining Atomic Layer Deposition and Selective Etching." Chemistry of Materials 31, no. 11 (2019): 3878–82. http://dx.doi.org/10.1021/acs.chemmater.9b00193.

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Sinha, Ashwini, Dennis W. Hess, and Clifford L. Henderson. "Transport behavior of atomic layer deposition precursors through polymer masking layers: Influence on area selective atomic layer deposition." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, no. 5 (2007): 1721. http://dx.doi.org/10.1116/1.2782546.

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Pasquali, Mattia, Stefan De Gendt, and Silvia Armini. "(Invited) Area-Selective Atomic Layer Deposition for Interconnect Applications." ECS Meeting Abstracts MA2021-02, no. 29 (2021): 867. http://dx.doi.org/10.1149/ma2021-0229867mtgabs.

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Gupta, R., and B. G. Willis. "Nanometer spaced electrodes using selective area atomic layer deposition." Applied Physics Letters 90, no. 25 (2007): 253102. http://dx.doi.org/10.1063/1.2749429.

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Lee, Han-Bo-Ram, and Hyungjun Kim. "Area Selective Atomic Layer Deposition of Cobalt Thin Films." ECS Transactions 16, no. 4 (2019): 219–25. http://dx.doi.org/10.1149/1.2979997.

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Dissertations / Theses on the topic "Area-selective atomic layer deposition"

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Nallan, Himamshu, Thong Ngo, Agham Posadas, Alexander Demkov, and John Ekerdt. "Area Selective Deposition of Ultrathin Magnetic Cobalt Films via Atomic Layer Deposition." Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207142.

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The work investigates the selective deposition of cobalt oxide via atomic layer deposition. Methoxysilanes chlorosilane and poly(trimethylsilylstyrene) self-assembled monolayers are utilized to prevent wetting of water and cobalt bis(N-tert butyl, N'-ethylpropionamidinate) from the substrate, thereby controlling nucleation on the substrate and providing a pathway to enable selective deposition of cobalt oxide. Sr and Al are deposited atop the oxide films to scavenge oxygen and yield carbon-free cobalt metal films. Thermal reduction of the oxide layer in the presence of CO and H 2 was also inve
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Sinha, Ashwini K. "Design and Characterization of Materials and Processes for Area Selective Atomic Layer Deposition." Diss., Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/19736.

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Area selective atomic layer deposition (ASALD) is demonstrated to be a promising route to perform direct patterned deposition. In particular, methods to modify (or mask) the surface and process parameters to perform selective deposition of titanium dioxide have been developed and investigated in detail. Results indicated that self assembled monolayer based masking methodology posses significant limitations due to challenges associated with obtaining defect free monolayer and absence of traditional patterning techniques. On the other hand, polymer films based masking methodology offer a better
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Zafoschnig, Lisa Anna. "SnOx electron selective layers for perovskite/silicon tandem solar cells using atomic layer deposition." Thesis, KTH, Energiteknik, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-245992.

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In this work the application of ALD deposited SnOx films as electron transport layers in perovskite solar cells is analysed. Processes to fabricate homogeneous, transparent and conductive tin oxide films were developed on an Oxford Instruments FlexAL tool using a TDMASn precursor and H2O as oxidiser. Two process regimes were investigated; an ALD regime, where the precursor gases are fully separated by long purging steps and a pulsed-CVD regime, where short purge times allow for continuous reactions. Both process regimes were analysed at deposition temperatures from 100 – 250°C and showed a dec
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Melo, Sánchez Claudia de Verfasser], and Frank [Akademischer Betreuer] [Mücklich. "Selective growth of Cu2O and metallic Cu by atomic layer deposition on ZnO and their application in optoelectronics / Claudia de Melo Sánchez ; Betreuer: Frank Mücklich." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2017. http://d-nb.info/1200408004/34.

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Jarnagin, Nathan D. "High χ block copolymers for sub 20 nm pitch patterning: synthesis, solvent annealing, directed self assembly, and selective block removal". Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50287.

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Block copolymer (BCP) thin film patterns, generated using directed self-assembly (DSA) of diblock copolymers, have shown excellent promise as templates for semiconductor device manufacturing since they have the potential to produce feature pitches and sizes well below 20 nm and 10 nm, respectively, using current 193 nm optical lithography. The goal of this work is to explore block copolymers with sufficient thermodynamics driving force (as described by the Flory Huggins interaction parameter, χ) for phase separation at these smallest lengths scales. Here, poly(styrene)-b-poly(hydroxystyrene
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Melo, Sánchez Claudia de. "Croissance sélective de Cu2O et Cu métallique par dépôt par couche atomique sur ZnO et leur application en optoélectronique." Electronic Thesis or Diss., Université de Lorraine, 2019. http://www.theses.fr/2019LORR0040.

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Dans ce travail, après l’état de l’art et la présentation de méthodes de synthèse et d’analyse, nous présentons des résultats sur la croissance sélective de Cu2O et Cu métallique par dépôt par couche atomique (ALD) sur ZnO, ZnO dopé à l’Al (AZO) et α-Al2O3. Nous mettons en évidence la possibilité de déposer de façon sélective Cu métallique ou Cu2O, en contrôlant la température de dépôt et la conductivité ou la densité des défauts ponctuels au sein du substrat. Un procédé sélectif local de dépôt par couche atomique (AS-ALD) a été mis en évidence sur une bicouche à motifs composée de zones de Zn
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Book chapters on the topic "Area-selective atomic layer deposition"

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Lee, Han-Bo-Ram, and Stacey F. Bent. "Nanopatterning by Area-Selective Atomic Layer Deposition." In Atomic Layer Deposition of Nanostructured Materials. Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527639915.ch9.

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Hossain, Samiha, Oktay H. Gokce, and N. M. Ravindra. "Atomic Layer Deposition and Atomic Layer Etching—An Overview of Selective Processes." In TMS 2021 150th Annual Meeting & Exhibition Supplemental Proceedings. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-65261-6_20.

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Tom, Matthew, Sungil Yun, Henrik Wang, Feiyang Ou, Gerassimos Orkoulas, and Panagiotis D. Christofides. "Multiscale Modeling of Spatial Area-Selective Thermal Atomic Layer Deposition." In Computer Aided Chemical Engineering. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-443-15274-0.50012-3.

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Muñoz-Rojas, David, Matthieu Weber, Christophe Vallée, et al. "Nanometric 3D Printing of Functional Materials by Atomic Layer Deposition." In Advanced Additive Manufacturing [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.101859.

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Atomic layer deposition (ALD) is a chemical vapour deposition (CVD) method that allows the layer-by-layer growth of functional materials by exposing a surface to different precursors in an alternative fashion. Thus, thanks to gas-solid reactions that are substrate-limited and self-terminating, precise control over thickness below the nanometer level can be achieved. While ALD was originally developed to deposit uniform coatings over large areas and on high-aspect-ratio features, in recent years the possibility to perform ALD in a selective fashion has gained much attention, in what is known as
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Wolfman, Jérôme, Beatrice Negulescu, Antoine Ruyter, Ndioba Niang, and Nazir Jaber. "Interface Combinatorial Pulsed Laser Deposition to Enhance Heterostructures Functional Properties." In Laser Ablation [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94415.

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In this chapter we will describe a new development of combinatorial pulsed laser deposition (CPLD) which targets the exploration of interface libraries. The idea is to modulate continuously the composition of interfaces on a few atomic layers in order to alter their functional properties. This unique combinatorial synthesis of interfaces is possible due to very specific PLD characteristics. The first one is its well-known ability for complex oxide stoichiometry transfer from the target to the film. The second one is the layer by layer control of thin film growth at the atomic level using in-si
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Keränen, J., E. Iiskola, C. Guimon, A. Auroux, and L. Niinistö. "Controlled coating of high surface area silica with titania overlayers by atomic layer deposition." In Studies in Surface Science and Catalysis. Elsevier, 2000. http://dx.doi.org/10.1016/s0167-2991(00)80721-1.

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Pal, Deepti, Ekta Roy, Priyanka Karandikar, and Archana Chaudhary. "TiO2, ZnO and Fe2O3 Thin Film Nanomaterials: Preparation to Applications." In Thin Film Nanomaterials: Synthesis, Properties and Innovative Energy Applications. BENTHAM SCIENCE PUBLISHERS, 2024. http://dx.doi.org/10.2174/9789815256086124010011.

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Nanomaterials have gained a lot of attention of scientists and researchers during the last two decades due to their small size (nano-scale) and large surface area. Amongst these nanomaterials, metal oxide thin film nanoparticles are gaining much more interest due to their exceptional chemical, electronic, catalytic, electrical and optical properties. These properties can be improved to develop essential functionalities and compositions that make them fit for various applications such as catalysts, solar cells, sensors, optoelectronic materials, and green energy storage applications. Thin film
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Conference papers on the topic "Area-selective atomic layer deposition"

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Shao, Sicong, Jin Yan, Wang Li, Kun Cao, and Rong Chen. "Studies on Selective Deposition of SiO2 by Rapid Atomic Layer Deposition." In 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2024. https://doi.org/10.1109/icsict62049.2024.10831080.

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Stabentheiner, M., D. Tilly, T. Schinnerl, et al. "Identification and Characterization of Conductive Dislocations in p-GaN/AlGaN/GaN Heterojunctions on GaN-on-Si Substrates." In ISTFA 2024. ASM International, 2024. http://dx.doi.org/10.31399/asm.cp.istfa2024p0146.

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Abstract We present a study of dislocation conductivity under forward bias in p-GaN/AlGaN/GaN heterojunctions on a GaN-on-Si substrate, which are part of every p-GaN HEMT structure. Conductive atomic force microscopy (C-AFM) is combined with structural analysis by scanning transmission electron microscopy (STEM) and defect selective etching (DSE). The density of conductive TDs was found to be 5 × 106 cm-2, using semi-automatic measurements to gather larger statistics on a delayered HEMT sample. IV measurements show a shift in turn-on voltage at the leakage positions. To characterize the type o
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Frederick, Esther, Quinn Campbell, Kevin Dwyer, et al. "Area-Selective Atomic Layer Deposition Templated by Atomic Precision Fabrication." In Proposed for presentation at the ACS Spring 2022 held March 20-24, 2022 in San Diega, CA United States. US DOE, 2022. http://dx.doi.org/10.2172/2002069.

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Mackus, Adriaan J. M. "Approaches and opportunities for area-selective atomic layer deposition." In 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). IEEE, 2018. http://dx.doi.org/10.1109/vlsi-tsa.2018.8403864.

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Wojtecki, Rudy J. "Inhibitor design for area selective atomic layer deposition (Conference Presentation)." In Advances in Patterning Materials and Processes XXXVII, edited by Roel Gronheid and Daniel P. Sanders. SPIE, 2020. http://dx.doi.org/10.1117/12.2551982.

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Schmucker, Scott, Esther Frederick, Quinn Campbell, et al. "Atomic Precision Advanced Manufacturing and Lessons for Area-Selective Deposition." In Proposed for presentation at the 21st International Conference on Atomic Layer Deposition held June 27-30, 2021 in Virtual,. US DOE, 2021. http://dx.doi.org/10.2172/1877517.

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Ahles, Christopher, Jong Choi, Keith Wong, Srinivas Nemani, and Andrew Kummel. "Selective Atomic Layer Deposition of TiO2." In 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). IEEE, 2019. http://dx.doi.org/10.1109/vlsi-tsa.2019.8804682.

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Lee, Yujin, Maggy Harake, Beihang Yu, Ricardo Ruiz, and Stacey F. Bent. "Applying area-selective atomic layer deposition for high-precision pattern transfer." In Novel Patterning Technologies 2024, edited by J. Alexander Liddle and Ricardo Ruiz. SPIE, 2024. http://dx.doi.org/10.1117/12.3012187.

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Park, Haneul, Jieun Oh, Jeong-Min Lee, and Woo-Hee Kim. "Area-Selective Atomic Layer Deposition of Ruthenium Thin Films Using Aldehyde Inhibitors." In 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM). IEEE, 2023. http://dx.doi.org/10.1109/iitc/mam57687.2023.10154817.

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Wojtecki, Rudy J., Magi A. Mettry, Noah Frederick Fine Nathel, et al. "Defectivity reduction in area selective atomic layer deposition by monolayer design (Conference Presentation)." In Advances in Patterning Materials and Processes XXXVI, edited by Roel Gronheid and Daniel P. Sanders. SPIE, 2019. http://dx.doi.org/10.1117/12.2515465.

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Reports on the topic "Area-selective atomic layer deposition"

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Elam, Jeffrey. Development of Highly Selective Oxidation Catalysts by Atomic Layer Deposition. Office of Scientific and Technical Information (OSTI), 2014. http://dx.doi.org/10.2172/1162272.

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Cronauer, D. C. Shape-selective catalysts for Fischer-Tropsch chemistry : atomic layer deposition of active catalytic metals. Activity report : January 1, 2005 - September 30, 2005. Office of Scientific and Technical Information (OSTI), 2011. http://dx.doi.org/10.2172/1011836.

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