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Journal articles on the topic 'CdTe heterojunction'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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1

Dabban, Mehdi Ahmad, and Abdel-naser A. M. Alfaqeer. "Enhancement in microstructural and optical properties of thermally evaporated CdTe/CdSe heterojunction thin Films." University of Aden Journal of Natural and Applied Sciences 26, no. 2 (2023): 273–84. http://dx.doi.org/10.47372/uajnas.2022.n2.a14.

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The optimization of microstructural and optical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe/CdSe thin films was reported in this work. We choose to research (CdSe) materials as a n-type absorber layer in the CdTe/CdSe heterojunction thin film. The Effect of annealing temperature on the structural and optical properties of CdTe/CdSe Heterojunction thin films was studied, using various techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM) and Double-beam computer-cont

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2

Sadullaev, Sadula O., Ibrokhim B. Sapaev, and Khidoyat E. Abdikarimov. "Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties." East European Journal of Physics, no. 1 (March 3, 2025): 211–16. https://doi.org/10.26565/2312-4334-2025-1-22.

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This paper presents a comprehensive theoretical study of p-n heterojunctions formed between cadmium telluride (CdTe) and silicon (Si) over the temperature range of 0 K to 800 K. We focus on band alignment, carrier transport mechanisms, and the temperature-dependent electrophysical properties of the heterojunctions. Through modeling approaches, we explore the energy band structure, intrinsic concentration, intrinsic electrical conductivity, and the impact of temperature variations on the heterojunction characteristics. Our findings provide insights into optimizing the performance of CdTe/Si het

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3

Yang, Wei Yong, Kui Ying Li, Sai Ling Wei, Guang Jing Song, and Jan Zhang. "Relationship between Microstructure and Photoelectron Behaviors of CdTe/Ligand Self-Assembly Quantum Dots." Materials Science Forum 685 (June 2011): 114–18. http://dx.doi.org/10.4028/www.scientific.net/msf.685.114.

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A water-soluble CdTe QDs capped by 3-Mercaptopropionic acid (MPA) were synthesized. The results confirmed that the grain size of the QDs was controlled by changing the reflux time of precursor solution and that the QDs possessed obviously quantum size effect. The results showed that a depletion layer CdTe1-xSx(0£x≤1) formed in between CdTe nanoparticle and ligand MPA. It is believed that two heterojunction-like structures possess quite distinct surface photovoltaic characteristic excited between the core-CdTe and the shell-CdS, and between CdTe/CdS and the ligand MPA, respectively, according t

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4

Razooqi, Mohammed A., Ameer F. Abdulameer, Adwan N. Hameed, Rasha A. Abdullaha, and Ehsan I. Sabbar. "The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode." Advanced Materials Research 702 (May 2013): 236–41. http://dx.doi.org/10.4028/www.scientific.net/amr.702.236.

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p-CdTe film has been deposited on n-Si(111) substrate by thermal evaporation technique. The prepared CdTe/Si heterojunction diodes have been annealed at 573K. The capacitance-voltage measurements have studied for the prepared heterojunctions under 2 KHz frequencies. The capacitance-voltage measurement indicated that these diodes are abrupt. The capacitance at zero bias, the built in voltage and the doping concentration increased after annealing process while the zero bias depletion region width is decreased. The carrier transport mechanism for CdTe/Si diodes in dark is tunneling-recombination.

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5

Koo, Bonil, and Brian A. Korgel. "Coalescence and Interface Diffusion in Linear CdTe/CdSe/CdTe Heterojunction Nanorods." Nano Letters 8, no. 8 (2008): 2490–96. http://dx.doi.org/10.1021/nl8015126.

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6

Zeng, Guanggen, Paul Harrison, Ali Kidman, Alaa Al-mebir, Lianghuan Feng, and Judy Wu. "Nondestructive Investigation of Heterojunction Interfacial Properties Using Two-Wavelength Raman Spectroscopy on Thin-Film CdS/CdTe Solar Cells." Applied Spectroscopy 70, no. 9 (2016): 1555–60. http://dx.doi.org/10.1177/0003702816643545.

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Raman spectra specific to CdS and CdTe were obtained on the CdS/CdTe heterojunction interface by employing two excitation wavelengths of λ1 = 488 nm and λ2 = 633 nm, respectively, from the glass side of Glass/FTO/CdS/CdTe/HgTe:Cu:graphite/Ag solar cells fabricated using pulsed-laser deposition (PLD). This two-wavelength Raman spectroscopy approach, with one wavelength selected below the absorption edge of the window layer (λ2 in this case), allows nondestructive characterization of the CdS/CdTe heterojunction and therefore correlation of the interfacial properties with the solar cell performan

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7

Zeng, Guanggen, Jingquan Zhang, Wenwu Wang, and Lianghuan Feng. "Correlation of Interfacial Transportation Properties of CdS/CdTe Heterojunction and Performance of CdTe Polycrystalline Thin-Film Solar Cells." International Journal of Photoenergy 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/519386.

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The light and dark output performances of CdS/CdTe solar cells made by close-spaced sublimation (CSS) were investigated to elucidate the transportation properties of carriers at CdS/CdTe heterojunction interface. It has been found that the interfacial transportation properties were relatively sensitive to variations of the characteristics of heterojunction due to the series resistance and shunting effects. For the high quality cell with 12.1% efficiency, narrow depletion region of ~1.1 microns and large electric field intensity of ~1.3 V/μm allow the sufficient energy-band bending close to CdS

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8

Sharan, Abhishek, Marco Nardone, Dmitry Krasikov, Nirpendra Singh, and Stephan Lany. "Atomically thin interlayer phase from first principles enables defect-free incommensurate SnO₂/CdTe interface." Applied Physics Reviews 9, no. 4 (2022): 041411. http://dx.doi.org/10.1063/5.0104008.

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Advancing optoelectronic and emerging technologies increasingly requires control and design of interfaces between dissimilar materials. However, incommensurate interfaces are notoriously defective and rarely benefit from first-principles predictions, because no explicit atomic-structure models exist. Here, we adopt a bulk crystal structure prediction method to the interface geometry and apply it to SnO2/CdTe heterojunctions without and with the addition of CdCl2, a ubiquitous and beneficial, but abstruse processing step in CdTe photovoltaics. Whereas the direct SnO2/CdTe interface is highly de

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9

Jayswal, Niva K., Dipendra Adhikari, Indra Subedi, Ambalanath Shan, and Nikolas J. Podraza. "Role of CdTe Interface Structure on CdS/CdTe Photovoltaic Device Performance." Materials 16, no. 20 (2023): 6812. http://dx.doi.org/10.3390/ma16206812.

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Glancing angle deposition (GLAD) of CdTe can produce a cubic, hexagonal, or mixed phase crystal structure depending upon the oblique deposition angles (Φ) and substrate temperature. GLAD CdTe films are prepared at different Φ at room temperature (RT) and a high temperature (HT) of 250 °C and used as interlayers between the n-type hexagonal CdS window layer and the p-type cubic CdTe absorber layer to investigate the role of interfacial tailoring at the CdS/CdTe heterojunction in photovoltaic (PV) device performance. The Φ = 80° RT GLAD CdTe interlayer and CdS both have the hexagonal structure,

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10

Chougale, Akanksha S., Harshad D. Shelke, Bikram Prasad, et al. "Simulation of p-CdTe and n-TiO2 Heterojunction Solar Cell Efficiency." Journal of Computers, Mechanical and Management 2, no. 1 (2023): 17–25. http://dx.doi.org/10.57159/gadl.jcmm.2.1.23036.

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This study presents a numerical analysis of p-type CdTe and n-type TiO2 heterojunction solar cells. The simulations were conducted using SCAPS-1D software to investigate the effects of varying the thickness of the p-type CdTe layer, the temperature, and the band gap on the efficiency of the solar cell. The results show that the efficiency of the solar cell increases from 16.81% to 18.28% as the thickness of the p-type CdTe layer is varied from 1.0 to 5.0 µm and decreases from 17.95% to 11.67% as the temperature is varied from 300 K to 400 K. The efficiency also increases from 15.29% to 19.26%

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11

Kuddus, Abdul, Md Ferdous Rahman, Jaker Hossain, and Abu Bakar Md Ismail. "Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach." European Physical Journal Applied Physics 92, no. 2 (2020): 20901. http://dx.doi.org/10.1051/epjap/2020200213.

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This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on sp

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12

Medina, José Carlos Zepeda, Enrique Rosendo Andrés, Crisóforo Morales Ruíz, et al. "Numerical Simulation and Performance Optimization of a Solar Cell Based on WO3/CdTe Heterostructure Using NiO as HTL Layer by SCAPS 1D." Coatings 13, no. 8 (2023): 1436. http://dx.doi.org/10.3390/coatings13081436.

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In this paper, a solar cell based on WO3/CdTe heterojunction was analyzed and optimized, for which the following structure of the Al/AZO/WO3/CdTe/NiO/Ni device was proposed, which was numerically simulated by the SCAPS 1-D software. Using the software, the effect of the thickness and carrier concentration of the absorber layer (CdTe) and the window layer (WO3) was analyzed, and the optimal value of these parameters was found to be 2 µm and 1015 cm−3 for the CdTe layer and 10 nm and 1019 cm−3 for the WO3 layer, respectively. The influence of the defect density of the WO3/CdTe interface on the p

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13

Subila, Kurukkal Balakrishnan, Kulangara Sandeep, Elizabeth Mariam Thomas, Jay Ghatak, Sonnada Math Shivaprasad, and K. George Thomas. "CdSe–CdTe Heterojunction Nanorods: Role of CdTe Segment in Modulating the Charge Transfer Processes." ACS Omega 2, no. 8 (2017): 5150–58. http://dx.doi.org/10.1021/acsomega.7b00995.

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14

Brus, V. V. "Photoelectrical analysis of n-TiO2/p-CdTe heterojunction solar cells." Semiconductor Physics Quantum Electronics and Optoelectronics 16, no. 1 (2013): 37–42. http://dx.doi.org/10.15407/spqeo16.01.037.

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15

Fang, Zhou, Xiao Chen Wang, Hong Cai Wu, and Ce Zhou Zhao. "Achievements and Challenges of CdS/CdTe Solar Cells." International Journal of Photoenergy 2011 (2011): 1–8. http://dx.doi.org/10.1155/2011/297350.

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Thin film CdS/CdTe has long been regarded as one promising choice for the development of cost-effective and reliable solar cells. Efficiency as high as 16.5% has been achieved in CdS/CdTe heterojunction structure in laboratory in 2001, and current techniques for CdS/CdTe solar cells gradually step toward commercialization. This paper reviews some novel techniques mainly within two years to solve this problem from aspects of promotion of fabrication technology, structural modification, and choice of back contact materials.

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16

Liyanage, W. P. R., and M. Nath. "CdS–CdTe heterojunction nanotube arrays for efficient solar energy conversion." Journal of Materials Chemistry A 4, no. 38 (2016): 14637–48. http://dx.doi.org/10.1039/c6ta03572h.

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17

Parkhomenko, Hryhorii, Mykhailo Solovan, Andrii Mostovyi, Ivan Orletskyi, and Viktor Brus. "Electrical and Photoelectric Properties of Organic-Inorganic Heterojunctions PEDOT:PSS/n-CdTe." 4, no. 4 (December 10, 2021): 43–48. http://dx.doi.org/10.26565/2312-4334-2021-4-04.

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PEDOT: PSS thin films are widely used as transparent coatings in flexible semiconductor devices including solar cells. However, they are not widely used as transparent coatings in combination with crystal substrates. This work shows the possibility of using PEDOT:PSS thin films as a frontal transparent conducting layer in hybrid organic-inorganic Schottky type heterojunctions of the PEDOT:PSS/n‑CdTe, which were prepared by deposition of PEDOT:PSS thin films (using the spin-coating method) on crystalline cadmium telluride substrates. The current-voltage (in a wide temperature range) and capacit

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18

Faurie, Jean‐Pierre, C. Hsu, and Tran Minh Duc. "HgTe–CdTe heterojunction valence‐band discontinuity." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 5, no. 5 (1987): 3074–78. http://dx.doi.org/10.1116/1.574219.

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19

Nykyruy, L. `., O. Yaremiichuk, Z. Zapukhlyak, et al. "Optical properties of CdS/CdTe heterojunction prepared by physical vapor deposition technique." Фізика і хімія твердого тіла 19, no. 3 (2019): 209–16. http://dx.doi.org/10.15330/pcss.19.3.209-216.

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The paper presents the study of the optical properties of a thin layer of Cadmium Sulphide deposited on Cadmium Telluride films. CdTe thin films were obtained by vapor phase condensation method using different technological factors, in particular, different thickness (different time of deposition τ) on glass substrates. After deposition the optical properties were analysed by Swanepoel method, using transmission spectra. The upper thin layer of CdS was deposited by thermal evaporation method on CdTe thin films. The change in optical properties of CdS/CdTe heterojunction in comparison with CdTe

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20

ALFARAMAWI, K., A. SWEYLLAM, S. ABBOUDY, N. G. IMAM, and H. A. MOTAWEH. "INTERFACE STATES-INDUCED-CHANGE IN THE ENERGY BAND DIAGRAM AND CAPACITANCE–VOLTAGE CHARACTERISTICS OF ISOTYPE ZnTe/CdTe HETEROJUNCTIONS." International Journal of Modern Physics B 24, no. 24 (2010): 4717–25. http://dx.doi.org/10.1142/s0217979210056165.

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Epitaxial layers of ZnTe have been grown on a (111) oriented CdTe single crystal substrate by thermal evaporation technique at 180°C and a pressure of 10-6 Torr. X-ray diffraction pattern indicated a highly oriented crystallographic growth of ZnTe (111) layer on CdTe (111) substrate. C–V measurements are carried out at frequencies of 10 kHz and 100 kHz. 1/C2 versus the forward bias voltage gave a straight line in the voltage range from 1 to 3 V. Extrapolation of 1/C2 → 0 led to an estimated value of the built-in potential of about 0.58 V. The calculated charge carrier concentration in the ligh

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21

Wang, Yuange, Xiaowen Huang, Di Wu, et al. "A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm." Journal of Materials Chemistry C 6, no. 18 (2018): 4861–65. http://dx.doi.org/10.1039/c8tc01237g.

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High-performance room-temperature infrared photodetectors based on MoS<sub>2</sub>/CdTe p–n heterojunction with broadband response, high responsivity, specific detectivity as well as fast response speed were demonstrated.

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22

von Huth, Palle, James E. Butler, and Reshef Tenne. "Diamond/CdTe: a new inverted heterojunction CdTe thin film solar cell." Solar Energy Materials and Solar Cells 69, no. 4 (2001): 381–88. http://dx.doi.org/10.1016/s0927-0248(01)00055-1.

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23

Orletsky, Ivan, Mariia Ilashchuk, Sergiy Nichy, and Bohdan Nichy. "Development of n-TiN/p-CdTe/n-CdTe Phototransistors for Use in a Networked Digital Light Sensor." Security of Infocommunication Systems and Internet of Things 2, no. 2 (2024): 02008. https://doi.org/10.31861/sisiot2024.2.02008.

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In this work, the mode of production by reactive magnetron sputtering of n-TiN/p-CdTe/n-CdTe heterostructures, which have the properties of a phototransistor with an unconnected (floating) base, is investigated. It is shown that in the structure of n-TiN/p-CdTe/n-CdTe at reverse voltage at the collector junction of p-CdTe/n-CdTe under conditions of irradiation close to АМ1 from the side of the n-TiN emitter, the phenomenon of amplification of the collector photocurrent by the direct current of the directly switched on is observed of the n-TiN/p-CdTe heterojunction. A forward voltage is applied

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24

Luo, Bingwei, Yuan Deng, Yao Wang, et al. "Synergistic photovoltaic–thermoelectric effect in a nanostructured CdTe/Bi2Te3 heterojunction for hybrid energy harvesting." RSC Advances 6, no. 115 (2016): 114046–51. http://dx.doi.org/10.1039/c6ra20149k.

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A synergistic photovoltaic and thermoelectric effect takes place in a single heterojunction solar cell that consists of a p-type CdTe nanorod array and n-type Bi<sub>2</sub>Te<sub>3</sub> nanostructures.

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25

Khan, M. R. H. "Interface properties of a CdTe-ZnTe heterojunction." Journal of Physics D: Applied Physics 27, no. 10 (1994): 2190–93. http://dx.doi.org/10.1088/0022-3727/27/10/031.

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26

Alnajjar, Abdalla A., Maysoon F. A. Alias, Rasha A. Almatuk, and Ala A. J. Al-Douri. "The characteristics of anisotype CdS/CdTe heterojunction." Renewable Energy 34, no. 10 (2009): 2160–63. http://dx.doi.org/10.1016/j.renene.2009.01.008.

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27

Bera, Swades Ranjan, and Satyajit Saha. "Fabrication of CdTe/Si heterojunction solar cell." Applied Nanoscience 6, no. 7 (2016): 1037–42. http://dx.doi.org/10.1007/s13204-015-0516-5.

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28

Chou, H. C., A. Rohatgi, N. M. Jokerst, E. W. Thomas, and S. Kamra. "Copper migration in cdte heterojunction solar cells." Journal of Electronic Materials 25, no. 7 (1996): 1093–98. http://dx.doi.org/10.1007/bf02659909.

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29

Olexander, Bolbas, Deyneko Natalya, Yeremenko Sergey, et al. "DEGRADATION OF CDTE SC DURING OPERATION: MODELING AND EXPERIMENT." Eastern-European Journal of Enterprise Technologies 6, no. 12 (102) (2019): 46–51. https://doi.org/10.15587/1729-4061.2019.185628.

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The mechanisms of CdTe SС degradation during operation are experimentally studied. Two mechanisms of degradation of such solar cells are identified. The first is the generation of defects in the transition region, which is caused by excess charge carriers and defects. The second is the increase in the back barrier. The study of the current-voltage and voltage-capacitance characteristics of solar cells allowed proposing a model of degradation of solar cells based on CdTe. It is found that the presence of copper in the back contact is associated with better initial efficiency, but also the faste

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30

Kumar, Sandeep, and Thomas Nann. "First solar cells based on CdTe nanoparticle/MEH-PPV composites." Journal of Materials Research 19, no. 7 (2004): 1990–94. http://dx.doi.org/10.1557/jmr.2004.0279.

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Hybrid bulk heterojunction composites are promising material for low-cost organic solar cells. Fundamental measurements with CdTe nanocrystal/MEH-PPV poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] composites and the first realization of a solar cell based on this material are presented. Optical and electrochemical properties are discussed as well as the current voltage characteristic of the resulting cell. It was found, that CdTe nanocrystal/MEH-PPV composites are well suited for an organic solar cell, even though the technological realization needs to be improved.

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31

Ayad Khedhair Al-mebir, Alaa. "Interdiffusion of Zinc-Stannate Buffer Layer and Cadmium Sulfide Heterojunction and Its Correlation with CdCl2 Treatment." University of Thi-Qar Journal of Science 7, no. 1 (2019): 128–33. http://dx.doi.org/10.32792/utq/utjsci/v7i1.264.

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In this paper, a highly transparent and conductive Zinc Stannate (Zn2SnO4) buffer layer is integrated between the transparent conductive oxide (TCO) layer and the Cadmium Sulfide (CdS) window layer to improve the optical properties of (TCO\Zn2SnO4\CdS\CdTe) heterojunctions in CdTe\CdS solar cells. This buffer layer is used to reduce the excess interdiffusion between the window and absorber layers when Ultra-thin CdS window layer, d < 100 nm, is employed, and post CdCl2 treatment is applied at high temperature after deposition of CdTe layer. The fabricated Zinc Stannate (Zn2SnO4) buffer laye

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32

Lee, Jae-Hyeong. "A study on the electrical characteristics of CdZnS/CdTe heterojunction." Journal of the Korean Institute of Information and Communication Engineering 14, no. 7 (2010): 1647–52. http://dx.doi.org/10.6109/jkiice.2010.14.7.1647.

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A., Thabet, Abdelhady S., and University Aswan. "Design modern structure for heterojunction quantum dot solar cells." International Journal of Electrical and Computer Engineering (IJECE) 10, no. 3 (2020): 2918–25. https://doi.org/10.11591/ijece.v10i3.pp2918-2925.

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This paper proposal new structure for improving the optical, electrical characteristics and efficiency of 3 rd generation heterojunction quantum dot solar cell (HJQDSC) (ITO/CdS/QDPbS/Au) model by using the quantum dot window layer instead of bulk structure layers cell. Also, this paper presents theoretically analysis for the performance of the proposal HJQDSC (ITO/QDCdS/QDPbS/Au) structure. The new design structure was applied on traditional (SnO2/CdS/CdTe/Cu) and (ZnO/CdS/CIGS/Mo) thin film solar cells which based on sub-micro absorber layer thickness models by replacing the bulk CdTe, CIGS

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Tomita, Yasuhiro, Toshiaki Kawai, and Yoshinori Hatanaka. "Properties of Sputter-Deposited CdS/CdTe Heterojunction Photodiode." Japanese Journal of Applied Physics 33, Part 1, No. 6A (1994): 3383–88. http://dx.doi.org/10.1143/jjap.33.3383.

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Rakhshani, A. E. "Heterojunction properties of electrodeposited CdTe/CdS solar cells." Journal of Applied Physics 90, no. 8 (2001): 4265–71. http://dx.doi.org/10.1063/1.1397279.

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Nikale, V. M., S. S. Shinde, A. R. Babar, C. H. Bhosale, and K. Y. Rajpure. "The n-CdIn2Se4/p-CdTe heterojunction solar cells." Solar Energy 85, no. 7 (2011): 1336–42. http://dx.doi.org/10.1016/j.solener.2011.03.014.

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37

Delahoy, Alan E., Shou Peng, Payal Patra, et al. "Cadmium Tin Oxide and Zinc Magnesium Oxide Prepared by Hollow Cathode Sputtering for CdTe Photovoltaics." MRS Advances 2, no. 53 (2017): 3203–14. http://dx.doi.org/10.1557/adv.2017.407.

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ABSTRACTThis work reports the fabrication and characterization of superstrate-type Zn1-xMgxO/CdTe heterojunction solar cells on both CdxSnyO and commercial SnO2:F transparent conducting oxides (TCOs) in which the ZMO and CTO layers are produced for the first time by hollow cathode sputtering. The sputtering is conducted in a reactive mode using metal or alloyed metal targets fitted to a custom-made linear cathode. It is notable that the CdS buffer layer conventionally employed in CdTe solar cells is entirely replaced by the ZMO window layer. The use of ZMO is found to eliminate the blue loss a

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38

Jones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu, and S. S. Chu. "The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1384–85. http://dx.doi.org/10.1017/s0424820100131553.

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Polycrystalline thin films of II-VI semiconductors on foreign polycrystalline (or amorphous) substrates have many applications in optoelectronic devices. In contrast to the extensive studies of the heteroepitaxial growth of compound semiconductors on single-crystal substrates, the nucleation and growth of thin films of II-VI compounds on foreign substrates have received little attention, and the properties of these films are often controlled empirically to optimize device performance. A better understanding of the nucleation, growth, and microstructure will facilitate a better control of the s

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39

Thabet, A., S. Abdelhady, and Youssef Mobarak. "Design modern structure for heterojunction quantum dot solar cells." International Journal of Electrical and Computer Engineering (IJECE) 10, no. 3 (2020): 2918. http://dx.doi.org/10.11591/ijece.v10i3.pp2918-2925.

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This paper proposal new structure for improving the optical, electrical characteristics and efficiency of 3rd generation heterojunction quantum dot solar cell (HJQDSC) (ITO/CdS/QDPbS/Au) model by using the quantum dot window layer instead of bulk structure layers cell. Also, this paper presents theoretically analysis for the performance of the proposal HJQDSC (ITO/QDCdS/QDPbS/Au) structure. The new design structure was applied on traditional (SnO2/CdS/CdTe/Cu) and (ZnO/CdS/CIGS/Mo) thin film solar cells which based on sub-micro absorber layer thickness models by replacing the bulk CdTe, CIGS a

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40

Bhattacharya, R. N., and K. Rajeshwar. "Heterojunction CdS/CdTe solar cells based on electrodepositedp‐CdTe thin films: Fabrication and characterization." Journal of Applied Physics 58, no. 9 (1985): 3590–93. http://dx.doi.org/10.1063/1.335735.

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41

Tian, Lecheng, Haibin Yang, Juan Ding, Qian Li, Yannan Mu, and Yuhang Zhang. "Synthesis of the wheat-like CdSe/CdTe thin film heterojunction and their photovoltaic applications." Current Applied Physics 14, no. 6 (2014): 881–85. http://dx.doi.org/10.1016/j.cap.2014.04.003.

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Flanagan, Joseph C., and Moonsub Shim. "Enhanced Air Stability, Charge Separation, and Photocurrent in CdSe/CdTe Heterojunction Nanorods by Thiols." Journal of Physical Chemistry C 119, no. 34 (2015): 20162–68. http://dx.doi.org/10.1021/acs.jpcc.5b06334.

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43

Keeler, W. J., and J. J. Dubowski. "Raman spectroscopy of PLEE (pulsed laser evaporation and epitaxy)-grown Cd1−xMnxTe films on (111) GaAs and (001) InSb." Canadian Journal of Physics 69, no. 3-4 (1991): 255–59. http://dx.doi.org/10.1139/p91-042.

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Raman light-scattering measurements have been used to characterize Cd1−xMnxTe (CMT) epilayers, 0.6–1.7 μm thick, deposited using pulsed laser evaporation and epitaxy (PLEE) on (111) GaAs and (001) InSb. Under outgoing resonance Raman conditions with a photoluminescence peak thought to be due to neutral acceptor-bound magnetic polaron emissions, five to seven overtones in various combinations of the "CdTe–like" and "MnTe–like" longitudinal optic phonon modes have been seen in six samples of CMT–GaAs at 14 K. This extreme degree of enhancement attests to the high quality of the PLEE-grown epilay

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Prateek, Aditi Priyadarshini, Kumar Nikhil, S K Choubey, K P Tiwary, and Rajeev Ranjan. "Study of Fabrication Process and Performance Analysis of the CDS/CDTE Based Photovoltaic Cell." International Research Journal on Advanced Engineering Hub (IRJAEH) 2, no. 05 (2024): 1421–26. http://dx.doi.org/10.47392/irjaeh.2024.0195.

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Fabrication of CDS/CDTE based heterojunction photovoltaic cell has been undertaken to explore better light conversion efficiency. We have developed a photovoltaic cell using glass coated with Indium doped Tin Oxide (ITO) which works as transparent conducting oxide (TCO). ITO coated glass has promising prospects of enhancing the efficiency of the photovoltaic cell. ITO layers are known to be employed as anode terminal due to the negative polarity they possess compared to the whole PV cell; here, we have employed it for the same function as the front layer. During fabrication of the photovoltaic

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A.H. AL-abbasy, Bashar. "A Study Of Photoelectrical Characteristics Of (CdS/CdTe) Heterojunction." AL-Rafdain Engineering Journal (AREJ) 19, no. 2 (2011): 68–76. http://dx.doi.org/10.33899/rengj.2011.27347.

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Petrosyan, S. G., L. M. Matevosyan, K. E. Avjyan, and S. R. Nersesyan. "Current Transport Mechanism in p-InSb–n-CdTe Heterojunction." Journal of Contemporary Physics (Armenian Academy of Sciences) 54, no. 2 (2019): 146–52. http://dx.doi.org/10.3103/s1068337219020051.

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Makhniy, V. P., and N. V. Skrypnyk. "Formation and Properties of n-CdO/p-CdTe Heterojunction." Telecommunications and Radio Engineering 67, no. 19 (2008): 1763–68. http://dx.doi.org/10.1615/telecomradeng.v67.i19.60.

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Nelson, A. J. "Photoemission investigation of the ZnSe/CdTe heterojunction band discontinuity." Journal of Applied Physics 78, no. 4 (1995): 2537–40. http://dx.doi.org/10.1063/1.360109.

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von Huth, P., J. E. Butler, W. Jaegermann, and R. Tenne. "The Inverted p-Diamond/n-CdTe Heterojunction Solar Cell." Journal of The Electrochemical Society 149, no. 1 (2002): G55. http://dx.doi.org/10.1149/1.1425797.

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Huang, Lei, Yue Zhao, and Dong Cai. "Homojunction and heterojunction based on CdTe polycrystalline thin films." Materials Letters 63, no. 24-25 (2009): 2082–84. http://dx.doi.org/10.1016/j.matlet.2009.06.028.

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