Relevant bibliographies by topics / CdxZn1-xTe

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'CdxZn1-xTe'

Author: Grafiati
Published: 28 May 2022
Last updated: 31 July 2025

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Journal articles on the topic "CdxZn1-xTe"

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Jin, Shuo, Li Li Wu, Wen Wu Wang, et al. "Study of CdxZn1-xTe Thin Films with Cu Layers." Applied Mechanics and Materials 329 (June 2013): 114–17. http://dx.doi.org/10.4028/www.scientific.net/amm.329.114.

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CdxZn1-xTe is a promising material for tandem solar cells with a continuously adjustable band gap from 1.45eV to 2.26eV, but p-type CdxZn1-xTe with higher carrier density is rarely reported. CdxZn1-xTe thin films with Cu layers were deposited by vacuum co-evaporation in sequence and annealed in low vacuum in this paper. The compositional, structural, morphological, electrical and optical properties were studied. The results show that zinc-blended Cd0.4Zn0.6Te films with (111) preferred orientation were fabricated. Conduction type of annealed CdxZn1-xTe films with Cu layers will change from int
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LI, JUNWEI, YANG JIANG, YUGANG ZHANG, DI WU, ANQI LUO, and ZHONGPING ZHANG. "AQUEOUS SYNTHESIS OF HIGH QUANTUM YIELD AND MONODISPERSED THIOL-CAPPED CdxZn1-xTe QUANTUM DOTS BASED ON ELECTROCHEMICAL METHOD." Nano 07, no. 02 (2012): 1250011. http://dx.doi.org/10.1142/s1793292012500117.

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A facile green approach has been developed to control the growth regime in the aqueous synthesis of CdxZn1-xTe semiconductor quantum dots (QDs) based on the electrochemistry method. The Low growth temperature and slow injection of Te precursor are used to prolong the diffusion controlled stage and thus suppress Ostwald ripening during the nanocrystal growth. The experimental results showed that a low concentration of Te precursor will definitely influence the growth procedure. The UV–visible absorption spectra, as well as transmission electron microscopy (TEM) shows the QDs a good monodispersi
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Wang, K. F., S. P. Fu, Y. F. Chen, J. L. Shen, and W. C. Chou. "Dielectric properties of CdxZn1−xTe epilayers." Journal of Applied Physics 94, no. 5 (2003): 3371–75. http://dx.doi.org/10.1063/1.1597973.

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Davami, Keivan, Judith Pohl, Mehrdad Shaygan, et al. "Bandgap engineering of CdxZn1−xTe nanowires." Nanoscale 5, no. 3 (2013): 932. http://dx.doi.org/10.1039/c2nr33284a.

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Murali, K. R., and P. R. Rajkumar. "Characteristics of Pulse Deposited CdxZn1-xTe Films." ECS Transactions 13, no. 10 (2019): 105–10. http://dx.doi.org/10.1149/1.3005189.

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Murali, K. R. "Properties of brush plated CdxZn1−xTe thin films." Solar Energy 82, no. 3 (2008): 220–25. http://dx.doi.org/10.1016/j.solener.2007.07.007.

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Sokolov, Igor A., Mikhail A. Bryushinin, Vladimir V. Kulikov, et al. "Characterization of CdTe, CdxZn1−xTe and GaAs detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 610, no. 1 (2009): 298–301. http://dx.doi.org/10.1016/j.nima.2009.05.098.

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Lee, H. S., H. L. Park, and T. W. Kim. "Dimensional structural transition in CdTe∕CdxZn1−xTe nanostructures." Applied Physics Letters 85, no. 23 (2004): 5598–600. http://dx.doi.org/10.1063/1.1832749.

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Lee, H. Y., T. W. Kang, and T. W. Kim. "Temperature dependence of the optical properties in p-Cd0.96Zn0.04Te single crystals." Journal of Materials Research 16, no. 8 (2001): 2196–99. http://dx.doi.org/10.1557/jmr.2001.0301.

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Photoluminescence (PL) measurements were performed on p-Cd0.96Zn0.04Te single crystals to investigate the dependence of the excitons on temperature. The activation energies and the longitudinal acoustic parameters of the excitons were determined from the temperature dependence of the PL spectra and were in reasonable agreement with the theoretical calculations. These results can help improve understanding for the application of p-CdxZn1–xTe single crystals in optoelectronic devices.
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Moger, Sahana Nagappa, and MG Mahesha. "Investigation on ZnTe/CdxZn1-xTe heterostructure for photodetector applications." Sensors and Actuators A: Physical 315 (November 2020): 112294. http://dx.doi.org/10.1016/j.sna.2020.112294.

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Dissertations / Theses on the topic "CdxZn1-xTe"

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Знаменщиков, Ярослав Володимирович, Ярослав Владимирович Знаменщиков, Yaroslav Volodymyrovych Znamenshchykov та ін. "Структурні, субструктурні та електрофізичні властивості плівок CdxZn1-xTe зі змінною концентрацією цинку". Thesis, Інститут фізики напівпровідників імені В.Є. Лашкарьова, 2015. http://essuir.sumdu.edu.ua/handle/123456789/46294.

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Метою дослідження було вивчення впливу концентрації цинку на структурні та електрофізичні властивості плівок CdxZn1-xTe. Плівки твердих розчинів CdxZn1-xTe були отримані на металізованих молібденом підкладках зі скла методом вакуумного термічного випаровування в квазізамкненому об’ємі.
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Знаменщиков, Ярослав Володимирович, Ярослав Владимирович Знаменщиков, Yaroslav Volodymyrovych Znamenshchykov та ін. "Склад плівок CdxZn1-xTe отриманих методом співвипаровування компонентів". Thesis, Львівський національний університет ім. І.Франка, 2014. http://essuir.sumdu.edu.ua/handle/123456789/38314.

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Монокристали високоомного телуриду кадмію легованого хлором CdTe (Cl) вже протягом тривалого часу використовуються як базовий матеріал для виготовлення детекторів рентгенівського та гамма випромінювання. Однак останні роки спостерігається тенденція до заміни цього матеріалу твердими трикомпонентними розчинами, перш за все такими, що містять Zn. Це пояснюється низкою суттєвих переваг твердих розчинів CdxZn1-xTe перед двокомпонентною сполукою, а саме: високим питомим опором матеріалу, можливістю регулювання ширини забороненої зони (ЗЗ) за рахунок зміни складу та ін. Як детекторний матеріал оста
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Fan, Wen-Chung, and 范文忠. "Growth and Characterization of CdxZn1-xTe Epilayers and Characterization of InxGa1-xN Epilayers." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/shf38r.

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碩士<br>中原大學<br>應用物理研究所<br>91<br>CdxZn1-xTe epilayers were grown on the GaAs(001) substrates by the molecular beam epitaxy. The optical properties of the epilayers were studied by the reflectance (R) and photoluminescence (PL) measurements. The energy gaps were found to decrease with the Cd concentration. The exciton activation energy, which is determined from the integrated PL intensity versus temperature plot, shows a decrease with the Cd composition. Temperature dependence of the energy gap, measured by the PL spectra, was fitted by the Varshni's and the O'Donnell's relation. Good fits were o
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Book chapters on the topic "CdxZn1-xTe"

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Williamson, W., S. A. Lee, Y. Luo, and Y. Rajakarunanayake. "Optical Investigation of CdxZn1−xTe/ZnTe Superlattices at High Pressure." In NATO ASI Series. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-2480-3_28.

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Conference papers on the topic "CdxZn1-xTe"

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Watson, Michael, Kaushik Chattopadhyay, Damian Hillman, Damon Hillman, Arnold Burger, and Ralph B. James. "Modeling and experimental results of CdxZn1-xTe detector response." In International Symposium on Optical Science and Technology, edited by Ralph B. James and Richard C. Schirato. SPIE, 2000. http://dx.doi.org/10.1117/12.407598.

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Johnson, Anthony M. "Room temperature excitonic absorption in CdxZn1-xTe/ZnTe multiple quantum wells: physics and applications." In Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine. SPIE, 1992. http://dx.doi.org/10.1117/12.2322279.

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You might also be interested in the extended bibliographies on the topic 'CdxZn1-xTe' for particular source types:
Journal articles
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