Relevant bibliographies by topics / Channel doping concentration

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Channel doping concentration'

Author: Grafiati
Published: 2 June 2025
Last updated: 31 July 2025

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Journal articles on the topic "Channel doping concentration"

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Albrecht, Matthaeus, Tobias Erlbacher, Anton J. Bauer, and Lothar Frey. "Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs." Materials Science Forum 858 (May 2016): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.821.

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In this work, the impact of the n-well doping concentration on the channel mobility and threshold voltage of p-MOSFETs and their applications in CMOS-devices is evaluated. For this purpose lateral p-channel MOSFETs with different channel lengths (L = 800 μm, 10 μm, 5 μm, and 3 μm) and doping concentrations (ND = 1015 cm-3 and 8·1015 cm-3) were fabricated and the respective field-effect mobility was extracted from the transfer-characteristics. Comparable to n-MOSFETs the mobility of p-MOSFETs was found to be the highest for the lowest doping concentration in the channel and the absolute value o
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N., M. Shehu G. Babaji M. H. Ali. "Exploring the Influence of Channel Doping Concentration on Short Channel Effects in Nanoscale Double-Gate FinFETs: A Comparative Study." Journal of Science and Technology Research 6, no. 1 (2024): 182–89. https://doi.org/10.5281/zenodo.10969362.

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<em>This work investigates the impact of channel doping concentration on short channel effects (SCEs) in different semiconductor materials using FinFETs. The work examines Gallium Arsenide (GaAs), Gallium Antimonide (GaSb), Gallium Nitride (GaN), and Silicon (Si) FinFETs in the PADRE simulator environment which is a powerful component from Multigate Field Effect Transistor (MUGFET) tool readily available at nanoHUB.org, analyzing performance metrics such as Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS), Threshold Voltage roll-off, transconductance as well as on-current. It is
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Kumar, Abneesh, Atal Kumar, R. K. Saxena, and Suresh Patel. "To Study Effect on Current Due to Channel Doping Concentrations Variation." International Journal of Advance Research and Innovation 2, no. 3 (2014): 37–40. http://dx.doi.org/10.51976/ijari.231407.

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The aim of this simulation work is to study effect of channel doping concentration. The channel lies under the oxide layer of the MOSFET. The results obtained show that as channel doping concentration decreases threshold voltage decreases and good saturation region in I-V curve is obtained and the drain current increases. So the lower channel doping concentration provides better mobility and hence, less velocity saturation.
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KUMARI, RITI, MANISH GOSWAMI, and B. R. SINGH. "THE IMPACT OF CHANNEL ENGINEERING ON SHORT CHANNEL BEHAVIOR OF NANO FIN-FETs." International Journal of Nanoscience 11, no. 02 (2012): 1250021. http://dx.doi.org/10.1142/s0219581x12500214.

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This short note presents the simulation result on the effect of channel engineering i.e., non-uniform channel doping on short channel effects (SCE) in nano Fin-FET devices using Silvaco TCAD tool. The nano Fin-FET structures were generated using DEVEDIT and the effect of channel doping concentration has been studied. The optimum doping concentration profile has been observed to considerably improve the SCE in general and drain induced barrier lowering (DIBL) in particular.
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K.Ullah, S.Riaz M.Habib F.Abbas S.Naseem I.Shah A.Bukhtiar. "Effect of Channel Doping Concentration on the Impact ionization of nChannel Fully Depleted SOI MOSFET." International Journal of Engineering Works 2, no. 2 (2015): 18–22. https://doi.org/10.5281/zenodo.15756.

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Impact ionization in fully depleted (FD) Silicon On Insulator (SOI) n-Channel MOSFET is investigated as a function of the doping concentration. We have found that impact ionization increases with the decrease in the doping concentration and vice versa. Simulation results obtained from Sentaurus TCAD with the higher doping concentration can control the threshold voltage (Vth). Furthermore we have examined the effect of doping concentration on the transconductance (gm) and have observed that transconductance is inversely proportional of the doping concentration.
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Sun, Hao, and PuiTo Lai. "Effect of Gate-Electrode/Gate-Dielectric Interlayer on Gate Screening of Remote Phonon Scattering in InGaZnO Thin-Film Transistor with High-k Gate Dielectric." ECS Meeting Abstracts MA2024-02, no. 34 (2024): 2384. https://doi.org/10.1149/ma2024-02342384mtgabs.

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InGaZnO thin-film transistors with various SiO2 thicknesses (0, 3.5, 8.5, 18.8 nm) in double-layered gate dielectric (NdHfO/SiO2) and different gate doping concentrations (2.4×1015, 1.5×1018, 2.1×1019 /cm3) are fabricated to systematically study the influence of the SiO2 low-k interlayer on the remote phonon scattering (RPS) in the conduction channel originated from the NdHfO high-k layer. The performances of the TFTs show critical dependence on the SiO2 thickness and the gate doping concentration. On the one hand, the channel-carrier mobility increases with the rise of gate doping concentrati
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Strenger, Christian, Viktoryia Uhnevionak, Vincent Mortet, et al. "Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs." Materials Science Forum 778-780 (February 2014): 583–86. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.583.

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In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off n-MOSFETs with different doping profiles and concentrations in the channel region. The trend of the field-effect and the Hall mobility as well as the differences thereof will be discussed. Based on the determined mobilities in the range from
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Wu, Chien-Hung, Po-Tsun Liu, Wen-Chun Chung, Kow-Ming Chang, Der-Hsien Lien, and Cheng Liu. "Effects of Mg Doping on Double Channel Layer Atmospheric Pressure-Plasma Enhanced Chemical Vapor Deposition Fabricated Amorphous InGaZnO Thin Film Transistors." Journal of Nanoelectronics and Optoelectronics 16, no. 9 (2021): 1412–16. http://dx.doi.org/10.1166/jno.2021.3086.

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Amorphous IGZO (a-IGZO) has been proved to be a suitable material for the channel layer in a thin film transistor, showing high mobility even in low temperature fabrication, device electrical characteristic exceeds a-Si or other metal oxide semiconductor materials. In this work, bottom gate top TFT is fabricated. With Atmosphere Pressure-PECVD (AP-PECVD), a-IGZO is deposited as device channel layer. A double channel layer is tested with Mg doping added in the bottom layer. This work focus on how the Mg doping concentration in the bottom layer affects device electrical characteristic. The resul
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Hatakeyama, Tetsuo, Takatoshi Watanabe, Junji Senzaki, et al. "Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping." Materials Science Forum 483-485 (May 2005): 829–32. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.829.

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This paper reports on the degradation of inversion channel mobility of SiC MOSFET caused by the increase of channel doping. SiC MOSFETs were fabricated on three wafers, the doping concentrations of the epitaxial layer of which were 16 10 2× cm-3 (sample A), 17 10 2× cm-3 (sample B) and 17 10 4× cm-3 (sample C). The field effect mobility sharply decreases as the doping concentration increases. Hall mobility measurements have been done to investigate the degradation of the mobility due to doping. The measurement of sample A shows that, as a consequence of the decrease of the free carrier density
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Kang, In Ho, Wook Bahng, Sang Cheol Kim, Sung Jae Joo, and Nam Kyun Kim. "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations." Materials Science Forum 556-557 (September 2007): 823–26. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.823.

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A double delta-doped channel 4H-SiC MESFET is proposed to kick out degradation of the DC and RF performances caused by the surface traps, by forming a quantum-well-like potential well and separating an effective channel from the surface. To obtain an optimum device structure, the DC and RF performances of double delta-doped channel MESFETs having various delta-doping concentrations but the same pinch-off voltage with that of conventional MESFET were also investigated. The SilvacoTM simulation results show that the double delta-doped channel MESFET achieved more improvement of the drain current
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Dissertations / Theses on the topic "Channel doping concentration"

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Wang, Shi-Hao, and 王士豪. "Study of UTBB-SOI MOSFET device reliability with various concentration of channel doping." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/74491718024098075819.

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碩士<br>國立高雄師範大學<br>電子工程學系<br>101<br>As the MOSFET devices have been scaling down, short channel effects become serious problems for traditional bulk MOSFETs. As the result, alternative MOSFET structure has been proposed. Lightly doped drain and Halo implantation are the most popular methods to suppress short channel effect. In this thesis, the ultra-thin-body and box silicon-on-insulator devices with above dopant conditions were investigated and the characteristic and the reliability of device with various dopant concentrations were discussed. Hot carrier injection was used to test reliability
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Lai, Chun-ming, and 賴俊銘. "The Investigation of Characteristic and Reliability for UTBBSOI with different concentration of channel doping." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/79435911855303496184.

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碩士<br>國立高雄大學<br>電機工程學系碩士班<br>101<br>Lightly doped drain and halo implantation had been one of the methods used to suppress short channel effect, in this thesis, we used ultra thin body and box silicon on insulator device which have the structure above description, we investigate the characteristic and the reliability of device with different dopant concentration at different temperatures, observe the situation and the mechanism of the device degradation from positive bias temperature instability and hot carrier effect. We found that different concentration of channel doping has a significant i
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Mu, Shou-Chun, and 穆守駿. "Short-Channel Effects and Reliability of the Different LDD and Pocket Doping Concentration on Ultra Thin Body SOI Devices." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/27470713785967649769.

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碩士<br>明新科技大學<br>電子工程系碩士班<br>103<br>As process technology at progress, so that the element size increasingly miniature, let component reliability becomes more important, research is also an important indicator. In the case of miniature components, But also led to SCE(Short Channel Effects),DIBL(Drain-Induced Barrier Lowering),HCE(Hot Carrier Effect), Component reliability problems and so on like an extension, so we use the UTB SOI (Ultra Thin Body Silicon On Insulator, UTB SOI) to avoid latch door effect, and to reduce the leakage current component, and combined with the LDD (Light Doped Drain)
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Book chapters on the topic "Channel doping concentration"

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Datta, Emona, Avik Chattopadhyay, and Abhijit Mallik. "Dependence of Analog Performance and Linearity with Channel Doping Concentration for an InGaAs MOSFET." In Springer Proceedings in Physics. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-1571-8_5.

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Kang, In Ho, Wook Bahng, Sang Cheol Kim, Sung Jae Joo, and Nam Kyun Kim. "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.823.

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Narula, Vishal, Shekhar Verma, Amit Saini, and Mohit Agarwal. "Performance Analysis of Rectangular Core-Shell Double Gate Junctionless Transistor (RCS-DGJLT)." In Nanoelectronics Devices: Design, Materials, and Applications (Part I). BENTHAM SCIENCE PUBLISHERS, 2023. http://dx.doi.org/10.2174/9789815136623123010006.

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The shrinking of the device parameters' dimensions could be a solution for improving the performance and high transistor density of traditional MOSFETs. However, the short-channel effects could create a problem in the performance of the device. This chapter examines and performs comprehensive simulations of the standard junctionless double-gate transistor. In this research, silicon thickness and work function engineering are used to better understand the junctionless transistor's operation. As silicon thickness increases, the junctionless double-gate FET's performance begins to decline. Additi
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Baturay, Şilan, and Canan Aytuğ Ava. "Al Doping Influence on Structural, Morphological and Optical Properties of CuO Films." In Versatile Approaches to Engineering and Applied Sciences: Materials and Methods. Özgür Yayınları, 2023. http://dx.doi.org/10.58830/ozgur.pub50.c45.

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In this study, CuO nanostructured films conjunction with metal doping have been deposited onto soda lime glass (SLG) substrate by method of spin coating at different doping concentration in solution (0%, 2% and 4%). X-ray diffraction (XRD) patterns for copper oxide films conjunction with Al doping demonstrated that the films have polycrystalline structure and have preferential growth in (-111) and (200) directions. Calculated dislocation density value of (-111) plane is changed between 3.7 x 1014 and 5.83 x 1014 m-2 and 83.7 x 1014 and 50.6 x 1014 m-2 for (200) owing to the expansion of struct
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K. Sood, Ashok, John W. Zeller, Parminder Ghuman, et al. "Doping and Transfer of High Mobility Graphene Bilayers for Room Temperature Mid-Wave Infrared Photodetectors." In 21st Century Nanostructured Materials – Physics, Chemistry, Classification, and Applications in Industry and Biomedical [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.101851.

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High-performance graphene-HgCdTe detector technology has been developed combining the best properties of both materials for mid-wave infrared (MWIR) detection and imaging. The graphene functions as a high mobility channel that whisks away carriers before they can recombine, further contributing to detection performance. Comprehensive modeling on the HgCdTe, graphene, and the HgCdTe-graphene interface has aided the design and development of this MWIR detector technology. Chemical doping of the bilayer graphene lattice has enabled p-type doping levels in graphene for high mobility implementation
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Chand Verma, Kuldeep. "Synthesis and Characterization of Multiferroic BiFeO3 for Data Storage." In Bismuth - Fundamentals and Optoelectronic Applications. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94049.

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Multiferroic BiFeO3 deals with spintronic devices involved spin-charge processes and applicable in new non-volatile memory devices to store information for computing performance and the magnetic random access memories storage. Since multiferroic leads to the new generation memory devices for which the data can be written electrically and read magnetically. The main advantage of present study of multiferroic BiFeO3 is that to observe magnetoelectric effects at room temperature. The nanostructural growth (for both size and shape) of BiFeO3 may depend on the selection of appropriate synthesis rou
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Conference papers on the topic "Channel doping concentration"

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Padovese, Jose A., Leonardo S. Yojo, Ricardo C. Rangel, Katia R. A. Sasaki, and Joao A. Martino. "Channel Doping Concentration Influence on BESOI MOSFET Light Sensor." In 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro). IEEE, 2019. http://dx.doi.org/10.1109/sbmicro.2019.8919338.

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Cao, Jian-Min, Yi Liu, Rui-Ze Sun, Wei He, and Bing Li. "A NBTI inhibition method with channel doping concentration in pMOSFETs." In 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2016. http://dx.doi.org/10.1109/icsict.2016.7998703.

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Abe, K., A. Teramoto, S. Watabe, et al. "Impact of Channel Doping Concentration on Random Telegraph Signal Noise." In 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.a-2-5.

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Kumar, Pankaj, Chitrakant Sahu, Anup Shrivastava, P. N. Kondekar, and Jawar singh. "Characteristics of gate inside junctionless transistor with channel length and doping concentration." In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2013. http://dx.doi.org/10.1109/edssc.2013.6628156.

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Park, So Jeong, Dae-Young Jeon, and Gyu-Tae Kim. "Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices." In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE, 2019. http://dx.doi.org/10.1109/eurosoi-ulis45800.2019.9041898.

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Ali, Naved, Deepanshu Dheer, Sagar Paliwal, and C. Periasamy. "TCAD analysis of variation in channel doping concentration on 45nm Double-Gate MOSFET parameters." In 2015 Annual IEEE India Conference (INDICON). IEEE, 2015. http://dx.doi.org/10.1109/indicon.2015.7443240.

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Maitra, Subhashis. "Study of the variation of the threshold voltage with the doping concentration and channel length." In 2017 Devices for Integrated Circuit (DevIC). IEEE, 2017. http://dx.doi.org/10.1109/devic.2017.8073976.

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Huang, Yanhua, Lei Zhu, Kenny Ong, et al. "SIMS Analysis for the Threshold Voltage Shift of Power MOS Caused by Abnormal Dopant Diffusion." In ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0290.

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Abstract Threshold Voltage (Vt) of MOSFET controls transistor’s on and off state. Vt is usually depends on gate oxide thickness and operating temperature. Systematic failure analysis for a Vt shift issue, should also consider the channel doping which affects the inversion layer formation. In this article, the failure case of a shift in the Vt of a Power MOSFET V is studied. Secondary Ion Mass Spectrometry (SIMS) is found to be the most direct way for detecting any abnormality in the channel doping profiles. A comprehensive simulation is performed showing that the Phosphorus level diffusion fro
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Adhikari, Nirmal, Phil Kaszuba, Gaitan Mathieu, Erik McCullen, Thom Hartswick, and Joe Myer. "A Novel Sample Preparation Approach for Dopant Profiling of 14 nm FinFET Devices with Scanning Capacitance Microscopy." In ISTFA 2020. ASM International, 2020. http://dx.doi.org/10.31399/asm.cp.istfa2020p0375.

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Abstract Three-dimensional device (FinFET) doping requirements are challenging due to fin sidewall doping, crystallinity control, junction profile control, and leakage control in the fin. In addition, physical failure analyses of FinFETs can frequently reach a “dead end” with a No Defect Found (NDF) result when channel doping issues are the suspected culprit (e.g., high Vt, low Vt, low gain, sub-threshold leakage, etc.). In new technology development, the lack of empirical dopant profile data to support device and process models and engineering has had, and continues to have, a profound negati
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Bustam, Mohd Shahrul Ashraf, Nur Sa’adah Muhamad Sauki, Lyly Nyl Ismail, Norsabrina Sihab, Faridah Abdul Razak, and Nur Amalina Muhamad. "Study the effect of channel doping concentration on electrical properties of SOI MOSFET using Silvaco TCAD simulator." In PROCEEDINGS OF THE 7TH INTERNATIONAL CONFERENCE ON ELECTRONIC DEVICES, SYSTEMS AND APPLICATIONS (ICEDSA2020). AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0033565.

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