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Dissertations / Theses on the topic 'Contact zoo'

Author: Grafiati
Published: 30 May 2022
Last updated: 31 July 2025

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1

Gu, Qilin. "Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact." Click to view the E-thesis via HKUTO, 2008. http://sunzi.lib.hku.hk/HKUTO/record/B39558344.

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2

顧啟琳 and Qilin Gu. "Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2008. http://hub.hku.hk/bib/B39558344.

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3

Zhao, Hehong. "Impurity and Back Contact Effects on CdTe/CdS Thin Film Solar Cells." Scholar Commons, 2007. https://scholarcommons.usf.edu/etd/580.

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CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices by improving the open circuit voltage Voc and current density Jsc. Efforts focused on increasing the Voc, which include increasing the doping concentration by introducing Phosphorus and Antimony, finding and testing new back contact materials, and varying the ambient of CSS CdTe. In addition, the effect of Zn2SnO4 on the cells' performance was also studied. Electrical characterization of the thin films and completed devices were carried o
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Lord, Alexander M. "Electronic and structural properties of Au contacts on ZnO nanowires." Thesis, Swansea University, 2013. https://cronfa.swan.ac.uk/Record/cronfa42804.

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Zinc Oxide has emerged from an unspectacular past in the field of electronics to become one of the most widely researched materials for future devices. Here we investigate the growth and electrical properties of semiconducting ZnO nanowires for future application in the field of Nano-Devices and present a solution to control the behaviour of the electrical contacts. ZnO nanowires (NWs) from initial growth experimentation and optimisation have been thoroughly characterised both structurally and electrically. Structural characterisation revealed the high quality of nanowires from vapour phase an
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5

Hadouchi, Warda. "Etude de l'utilisation du ZnO comme contact de type n dans des dispositifs photovoltaïques à base de pérovskite hybride." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLX012/document.

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Les cellules solaires pérovskites hybrides ont marqué le monde du photovoltaïque avec une augmentation spectaculaire des rendements durant ces quatre dernières années. Avec des rendements dépassant 20% à l’heure actuelle, ce type de cellules suscite une attention particulière dans le monde scientifique. Dans l’architecture de la cellule solaire pérovskite, le TiO2 est l’oxyde le plus utilisé comme matériau collecteur d’électrons. Cette couche d’oxyde joue un rôle important dans la cellule, cependant le procédé d’élaboration du TiO2 requiert une étape de recuit à haute température. En plus des
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Pörhölä, Susanna. "Granskning av Parken Zoo i medier : En kvantitativ och kvalitativ studie om mediernas bevakning av Parken Zoo händelsen." Thesis, Umeå universitet, Institutionen för kultur- och medievetenskaper, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-65849.

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The purpose of this study was to investigate how media has followed the Parken Zoo incident and analyse how media convey the issue about the Parken Zoo incident. The different results have been compared. To answer the purpose of the study three issues has been formulated:  how do the different media relate to the ideal of objectivity? Who come across and get to speak in the different media? What differences and similarities are in the media?    The theories that have been used in this study are mainly McCombs theory of agenda setting, Strömbäck’s theory of framing and theory of media logic, Ko
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7

Bhatt, Rita. "Growth and Characterization of ZnO for the Front Contact of Cu(In,Ga)Se2." Scholar Commons, 2000. http://scholarcommons.usf.edu/etd/3840.

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ZnO window layers for CIGS solar cells are grown with a DC sputtering technique instead of a conventional RF sputtering technique. Transparent window layers and buffer layers are sputtered from the Zn target in the presence of Oxygen. The window layer is doped with Aluminum in order to achieve high electrical conductivity and thermal stability. The effect of different sputtering parameters on the electrical and optical properties of the films is elaborately studied. Sets of annealing experiments are also performed. Combinations of different deposition parameters are examined to design the opti
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Cox, Jonathan Wesley. "Electronic and Optical Properties of Defects at Metal-ZnO Nanowire Contacts." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1492199033371717.

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Bhatt, Rita. "Growth and characterization of ZnO for the front contact of Cu(In,Ga)Se2 solar cells using reactive sputtering techniques." [Tampa, Fla.] : University of South Florida, 2007. http://purl.fcla.edu/usf/dc/et/SFE0002055.

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10

Skopin, Evgenii. "Etude des premiers instants du dépôt chimique par flux alternés (ALD) de films ZnO ultra minces sur In0,53Ga0,47As, dans le but d'optimiser la résistance de contact d'une structure MIS." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAY016/document.

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Ce travail porte sur l'étude des étapes initiales du dépôt de couches atomiques de ZnO (ALD) sur une surface (100) de In0,57Ga0,43As, par l'utilisation de techniques de caractérisation in situ (rayonnement synchrotron). En raison de la grande mobilité des électrons, le semi-conducteur III-V InGaAs est un matériau potentiel pour remplacer le canal de Silicium dans les transistors à effet de champ (MOSFET). Afin de diminuer la hauteur de la barrière Schottky et la résistance de contact, une couche ultra-mince (tunnel) de ZnO peut être insérée entre le métal et le semiconducteur InGaAs. Au cours
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11

Long, Renhai. "In-situ Scanning Electron Microscopy for Electron-beam Lithography and In-situ One Dimensional Nano Materials Characterization." ScholarWorks@UNO, 2009. http://scholarworks.uno.edu/td/966.

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In this thesis, we demonstrate in-situ scanning electron microscopy techniques for both electron beam lithography (EBL) and in-situ one dimensional nano materials electrical characterization. A precise voltage contrast image positioning for in-situ EBL to integrate nanowires into suspended structures for nanoswitch fabrication has been developed. The in-situ EBL eliminates the stage movement error and field stitching error by preventing any movements of the stage during the nanolithography process; hence, a high precision laser stage and alignment marks on the substrate are not needed, which s
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12

Wenker, Christian J. Wenker Christian J. "Dentale Affektionen beim europäischen Braunbären (Ursus arctos SSP.) im Zoo unter besonderer Berücksichtigung der Bären im Berner Bärengraben = Dental affections of the European brown bear (Ursus actos SSP.) in a zoological garden with special consideration of the bears in the Berneses Bear Pit /." [S.l.] : [s.n.], 1997. http://www.ub.unibe.ch/content/bibliotheken_sammlungen/sondersammlungen/dissen_bestellformular/index_ger.html.

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13

Zimmermann, Gregor. "Elektrische Charakterisierung PLD-gewachsener Zinkoxid-Nanodrähte." Doctoral thesis, Universitätsbibliothek Leipzig, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-61365.

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Die vorliegende Arbeit beschäftigt sich mit der elektrischen Charakterisierung von Zinkoxid-Nanodrähten, die mittels gepulster Laserablation (PLD) hergestellt wurden. Ausgehend von den so generierten ZnO-Nanodraht-Ensembles werden Methoden zu deren elektrischer Untersuchung diskutiert und auf praktische Anwendbarkeit hin verglichen. Die entwickelten Methoden werden auf Ensembles von auf n-leitenden ZnO- und ZnO:Ga-Dünnschichten aufgewachsenen Phosphor-dotierten ZnO-Nanodrähten angewendet. Deren reproduzierbares, in Strom–Spannungs- (I–U-) Kennlinien beobachtetes diodenartiges Verhalten wird ge
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14

Venturi, Linda. "Etude des propriétés de photoluminescence de nano-matériaux sous champ électrique intense." Thesis, Normandie, 2019. http://www.theses.fr/2019NORMR118.

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Dans cette thèse, la tomographie à sonde atomique assistée par laser est couplée in situ à un banc de photoluminescence (PL), où le rayonnement laser pulsé est utilize pour déclencher l’évaporation ionique des échantillons et, simultanément, pour activer l’émission à partir des centres optiquement actifs présents dans le matériau. Pour ce travail, deux matériaux différents ont été sélectionnés : des nano-aiguilles de diamant avec des défauts optiquement actifs intégrés (centres de couleur) et une hétérostructure multi-quantique (MQW) ZnO / (Mg, Zn)O, qui contient des émetteurs quantiques d’épa
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Давиденко, Н. В. "Розробка маркетингової стратегії для ТОВ «Контактний зоопарк»". Thesis, 2018. http://dspace.oneu.edu.ua/jspui/handle/123456789/9965.

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Об’єктом дослідження кваліфікаційної роботи є маркетингова діяльність товариства з обмеженою відповідальністю «Контактний зоопарк». Предметом дослідження є методологічні та практичні засади розробки маркетингової стратегії послуг з організації дозвілля підприємства ТОВ «Контактний зоопарк». В першому розділі розглянуто теоретичні аспекти формування та розвитку маркетингової стратегії підприємств сфери дозвілля; в другому аналітичному розділі роботи викладено результати дослідження маркетингової діяльності ТОВ «Контакний зоопарк»; в третьому практичному розділі відображено містить практичні п
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Lin, Yu-Jui, and 林友瑞. "Schottky contact on ZnO nanowires." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/56036163045141105522.

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碩士<br>國立臺灣大學<br>物理研究所<br>98<br>ZnO nanowires were grown by thermal evaporation of zinc in an Ar/O2 flow on ITO glass substrates without any catalyst. After treated the ZnO nanowires with hydrogen peroxide (H2O2) at 70℃, metallic contacts were made by depositing an ITO overlayer by pulse laser deposition (PLD). The diameter and length of the resulting nanowires were measured by scanning electronic microscope (SEM), and the crystallinity and orientation of the nanowires were analyzed by X-ray diffraction. The I-V curve and photocurrent of the ITO/ZnO nanowires/ITO samples were measured to evalua
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Mtangi, Wilbert. "Electrical characterization of ZnO and metal ZnO contacts." Diss., 2010. http://hdl.handle.net/2263/28131.

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The electrical properties of ZnO and contacts to ZnO have been investigated using different techniques. Temperature dependent Hall (TDH) effect measurements have been used to characterize the as-received melt grown ZnO samples in the 20 – 330 K temperature range. The effect of argon annealing on hydrogen peroxide treated ZnO samples has been investigated in the 200 – 800oC temperature range by the TDH effect measurement technique. The experimental data has been analysed by fitting a theoretical model written in Matlab to the data. Donor concentrations and acceptor concentrations together with
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18

Chan, Hui-Tzu, and 詹惠慈. "Study of ohmic contact to n-type ZnO." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/yp47hz.

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碩士<br>中原大學<br>電子工程研究所<br>98<br>Zinc oxide (ZnO), a wide-gap (3.37eV at room temperature) semiconductor with a high exciton binding energy (60 meV), has emerged as a candidate for use in short-wavelength optoelectronic devices such as ultraviolet (UV) lasers and light-emitting diodes (LEDs). Due to its high thermal and chemical stability in an air ambient, high transmittance (&amp;gt;90%), good electrical conductivity and high optical transparency, ZnO has also attracted more attention in the applications of display devices, solar cells, UV LEDs, and electronic transducers. In this thesis, ZnO
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林昭志. "Electrical contact properties of ZnO nanowires after irradiation." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/21127214642585131807.

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Hsu-Kuan, Lin. "ZnO based TCL contact for GaN based LED applications." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0016-0109200613412366.

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Lin, Hsu-Kuan, and 林旭冠. "ZnO based TCL contact for GaN based LED applications." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/85723326999689826626.

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碩士<br>國立清華大學<br>電子工程研究所<br>94<br>This thesis work demonstrated the high performance of a light emitting diode (LED) which is able to illuminate visible light at very high lumen (eg. 254 mcd); the LED is formed by five InGaN/GaN quantum wells and a high voltage enduring contacting structure which is composed of Nickel (Ni)/Aluminum doped Zinc Oxide (AZO). In order to enhance the high voltage enduring capability of the LED, one of the contacting structures is formed as a p-i-n structure. By depositing a thick layer of ZnO (i.e. 440 nm) as the i layer of this p-i-n structure, a large portion of
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22

Liao, Chieh-Ying, and 廖潔瑩. "The Effects of Surface Treatment on ZnO Ohmic Contact." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/71798300403002464879.

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碩士<br>正修科技大學<br>電子工程研究所<br>100<br>The n-type ZnO film in this study was grown on SiO2/Si substrates by radio frequency magnetron sputtering. Rapid thermal annealed and plasma surface treatment were used to improve electric conductivity of ZnO films. The ohmic contacts of metal Ni deposited on processed ZnO were studied by circular transmission-line-method (CTLM) measurements. The I-V curve of Ni metal on as-deposited ZnO thin films was not linear. However, Ni metal on the ZnO thin films annealed at 500OC for 10min in vacuum ambition shows good ohmic contact with a specific contact resistance
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Juang, Jia-Lin, and 莊家霖. "Investigation of Ga-doped ZnO Ohmic Contact to p-GaN." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/82136259571467664538.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>94<br>We report on the Ga-doped ZnO ohmic contact to p-GaN. The GZO transparent ohmic contact layer was deposited on p-GaN by RF- sputter. The transmittance of a GZO film with a thickness of 350 nm was 75%-82% for the light in the wavelength range of 400 and 500 nm.In addition,the GZO contact film yielded a low specific contact resistance of 1.2×10-2 (ohm cm2) on p-GaN when annealed at 700oC for 5 min under a nitrogen ambient. Secondary ion mass spectroscopy and x-ray photoemission spectroscopy analyses of the GZO and p-GaN interface indicated that Ga atoms had out-
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Hsieh, Kai-Li, and 謝凱力. "Contact Electrode Influences on Electrical Properties of ZnO Nanowire Devices." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/90082118066670200705.

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碩士<br>國立交通大學<br>電子物理系所<br>100<br>The electron transport in ZnO nanowires and the nanoscale metal/semiconductor interface are studied from analyses of temperature-dependent current-voltage behaviors in the temperature range from 30 to 300 K. In this study, 70 nm-diameter ZnO nanowires were used for device fabrication. By using electron-beam lithography, we fabricated one kind of devices having two Ohmic-contact electrodes on ZnO nanowires to study electron transport. We found that the integrated models of thermal activation and three-dimensional variable range hopping fit our data properly. One
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Lu, Yan-shing, and 呂彥興. "Applications of Ga-doped ZnO Contact on GaN-based LED." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/59762878872154616361.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>95<br>In this study, gallium-doped zinc oxide(GZO)thin film contact to GaN-based light emitting diode(LED) was investigated and compared with Ni/Au and ITO thin film. We demonstrated a series of properties of different transparent contact layers(TCL) onto p-GaN and applied the optimization to the chip process of LEDs. In order to improve the electrical properties of GZO contact layer to p-GaN, ITO thin film was inserted between GZO and p-GaN. In this study, Ni/Au and ITO TCL was also prepared for comparison.The specific contact resistances of Ni/Au, ITO, and ITO/G
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Hu, Chen-Min, and 胡茜閔. "Study of Ohmic Contacts to n-type ZnO." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/49744306043498052806.

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碩士<br>正修科技大學<br>電子工程研究所<br>96<br>In this study, ohmic contacts of metal Al deposited on n-type ZnO:Al (2.0×1018 cm-3) were studied by current–voltage (I-V) and transmission-line-method (TLM) measurements. It is shown that Al contacts as-deposited and annealed at 100°C for 1 min under a vacuum ambient show ohmic contact with good characteristics. The specific contact resistivity of as-deposited Al is 5.02 ×10-4 Ωcm2. The best ohmic contact to n-type ZnO:Al was obtained using a Al contact that was annealed at 100°C for 1 min under a Vacuum ambient, showing a specific contact resistance Rc of 4.0
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Lai, Jian-Hung, and 賴建宏. "Schottky contacts on n-type ZnO thin films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/92917623040509478381.

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碩士<br>國立臺灣大學<br>物理研究所<br>96<br>The formation and properties of Schottky contacts to ZnO thin films have been investigated. Since ZnO possesses superior properties in many aspects, Schottky contact are needed to realize some ZnO-based devices. In this work, ZnO thin films were grown by fast pulsed laser deposition. Au Schottky contacts were deposited by radio frequency magnetron sputtering but their current-voltage relations show ohmic characteristics or Schottky behavior with a high leakage current. In order to improve the Schottky behavior, the hydrogen peroxide treatment was used on the ZnO
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Lai, Jian-Hung. "Schottky contacts on n-type ZnO thin films." 2008. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2606200813372700.

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Lin, Kuan-Yi, and 林冠毅. "Contract Dispute of Public Construction Project-Taking Public Zoo New Construction Project as an Example." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/d6sfbc.

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碩士<br>國立臺灣海洋大學<br>河海工程學系<br>106<br>The "Government Procurement Act" of ROC covers three major procurements Property, Service and Construction work. However, with the development of pluralistic social environment coupled with diverse and complex government procurement cases, the applicability, impartiality and transparency of the relevant content of the Government Procurement Act have been questioned especially on "Construction work" procurement disputes are most common. In terms of public works, life cycle includes feasibility assessment, basic planning, design, tendering construction, accept
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Kao, Wen-Hsien, and 高文賢. "The ohmic contact characteristics and the growth of ZnO nanorods on GaN substrate." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/63259111858928631213.

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碩士<br>崑山科技大學<br>光電工程研究所<br>101<br>The ohmic contact and the growth of ZnO nanorods on a GaN substrate were studied in the research. The ohmic contact scheme of MZO/Ni/p-GaN was designed in the research. The Mo doped ZnO thin film (MZO) shows the characteristics of both high carrier concentrations and transparent electrode. The high work function metal, Ni, is a buffered layer between MZO and p-GaN for the formation of ohmicity. A low specific contact resistance of 5.83 × 10-2Ω-cm2 was obtained in the structure after it was rapid thermal annealed at 750 ℃ for 30 sec. The ohmicity of the contact
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Hsiang, Shu-Hui, and 蕭淑慧. "Study on the characteristics of ohmic contact to ZnO grown by atmospheric pressure MOCVD." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/87822328764804863886.

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碩士<br>中原大學<br>電子工程研究所<br>97<br>Zinc oxide (ZnO) is a II - VI compound semiconductor, which can be used for preparing ultraviolet light-emitting diodes (UV- LEDs), the window layer of solar cell and a transparent electrode for liquid crystal display (LCD). In this thesis, ZnO thin films were grown on silicon substrates by the atmospheric pressure chemical-vapor deposition (AP-MOCVD). On these ZnO films metal systems were deposited by E-Gun to form ohmic contacts. Two kinds of metal system: Ti (titanium) /Pd (palladium) /Ag (silver) and Ti (titanium)/Au (gold) were compared by optimizing the an
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Wang, Wei-Chin, and 王偉欽. "Influence of hydrogen peroxide solution on properties of ZnO films and metal-semiconductor contact." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/yqxen3.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>96<br>Besides having a wide direct bandgap of 3.37 eV, ZnO has an exciton binding energy of about 60 meV which is much higher than that of 22 meV and 25 meV for ZnSe and GaN, respectively. These benefits confirm the opto-electronic devices fabricated by ZnO material should have highly efficient performance at room temperature. Therefore the ZnO-based devices such as lighting-emitting diodes (LEDs), laser diodes (LDs), UV photodetectors, and solar cells have been recently proposed. In considering the ZnO-based LEDs, the fabrications of homo-structures still face
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Chang, kuo-Ching, and 張國慶. "Analysis the characteristic of implant Si and implant N in ZnO and to investigate the ohmic contact with ZnO and metal." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/26826385869018847136.

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Chen, Yu-ping, and 陳毓萍. "The study of ZnO Schottky diodes with Ir contact electrodes and the different doping on ZnO powders with sol-gel method." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/06798147038119299273.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>95<br>The thesis is made up of two parts: PartⅠ: This part is the research of Schottky diodes. The Ti/Al/Ti/Au (20/20/20/60nm) ohmic contact were deposited of thermal evaporated films onto the ZnO, and then annealed at 500℃ for 1min under N2 ambient. The Schottky contact that Ir (30nm) were then patterned by lift-off of e-beam evaporation. Then the I-V and C-V characters of the as-deposed diodes are measured. According to the I-V characteristic at room temperature, the Schottky barrier height were 0.824 eV and 0.837 eV are calculated by thermionic emission mod
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Hsu, Kuo-Wei, and 徐國偉. "Characteristics of Ga doped ZnO transparent conducting thin film and theirs contact on p-type GaN." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/64124743780211651893.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>94<br>In this study, transparent and conductive Ga-doped ZnO films were deposited on sapphire by the sputtering syetem. The GZO films were obtained by cosputtering ZnO and Ga2O3 targets at different deposition power. The as-deposited ZnO films exhibited a high-resistivity property. From optical and electrical analyses, we observed that the GZO films showed high-transparency and low-resistivity after post-annealing in nitrogen ambient. When the GZO films contented of 2.9at% gallium showed a low resistivity of 5.7×10-4 ohm-cm and a carrier concentration of 4.47×1020
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Chao-TsungCheng and 鄭兆琮. "Electronic transport properties and characterizations of single ZnO microrod M-S-M structure with Ag Schottky contact." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/39953706181153793689.

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碩士<br>國立成功大學<br>光電科學與工程學系<br>102<br>In this article, we fabricated a single ZnO microrod M-S-M structure photodetector with Ag Schottky contact. We demonstrate this phonemona by physical band model. ZnO microrod ultraviolet (UV) photodetector with two-dimensional Schottky barrier, which presented a high photocurrent gain of 5.325 under UV illumination with power density 47.5mW/cm. The asymmetric I-V curve was caused by different Schottky barrier at the interface of electrode and ZnO microrod. Under UV light, The I-V curve become more symmetric, the higher the barrier height, the higher the d
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Tong, Yu-Kauwn, and 湯宇光. "Optical-Electrical Properties of ZZO Films grown by RF Co-sputter for Ohmic Contact with P type GaN." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/82886461984556154074.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>93<br>Abstract 　In this thesis, the materials characteristics of zirconium (Zr) doped zinc oxide (ZnO) films and their contacts on p-type GaN were investigated. The transparent and conductive ZnO films were doped with Zr atoms at concentrations of 8.2, 10 and 15 wt%, respectively. Sequentially, the contact properties of the optimum transparent and conductive ZZO films contacted on p-type GaN were conducted from a transmittance line model (TLM). These ZnO films doped at various Zr atoms were deposited on sapphire (0001) substrates using a cosputtering system emp
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Tsai, Fu-Chun, and 蔡富鈞. "Ti/Al ohmic contacts to ZnO-ITO cosputtered films and its applications to Schottky diodes." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/2n26g6.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>97<br>In this study, the ZnO-ITO films were grown by rf magnetron cosputtering deposition on sapphire substrate, using 2 in. diameter targets of ITO (purity 99.99% with In2O3 : SnO2 = 90 : 10 wt %) and ZnO (purity 99.99%). The cosputtered film at an atomic ratio of 80% [Zn / (Zn + In) at.%] was annealed under oxygen ambient and possessed an electron carrier concentration of 1017 ~ 1018 cm−3. Prior to lithography, the annealed ZnO-ITO films were ultrasonically degreased in acetone, methanol, and rinsed in deionized water for 5 min in each step. A standard photoli
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Beaumont, Ana Cecilia Marques de. "ZTO Thin film transistor parameter extraction and modeling." Master's thesis, 2017. http://hdl.handle.net/10362/31875.

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Transistor models are of utmost importance for device behaviour prediction and circuit design. Physical modelling has the advantage of the parameters being correlated based on device physics. This allows to gain insight on the device during the analysis and extraction of parameters phase. However, the extraction methods may not consider possible non-idealities of the device, which can cause modelling issues when working with novel thin film transistors (TFTs). A simple physical DC and AC model was applied to a novel zinc tin oxide TFT annealed at low temperatures (200 ºC). The characteristic
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ChiehLin and 林潔. "Improving Source/Drain Contact Resistance and Electronic Properties of InGaZnO Thin-Film Transistors Using a ZnO-based Buffer Layer." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/f4c222.

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碩士<br>國立成功大學<br>微電子工程研究所<br>103<br>To improve source/drain (S/D) contact resistance (RDS) and electronic properties of amorphous indium gallium zinc oxide thin-film transistors (α-IGZO TFTs), this study used Ar plasma treatment to increase oxygen vacancies of thin films and then decreasing contact resistance. Another way to decrease contact resistance is inserting sputtering-deposited n+-layers The carrier concentration, mobility, and resistivity can be modulated by RF sputtering under different deposition pressure. As the deposition pressure is increased, the carrier concentration and the hal
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Chen, Tzu-Yin, and 陳姿尹. "Study of ZnO:(Al, Ga) thin films for the front contacts in amorphous silicon solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/50372137644295586519.

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碩士<br>國立彰化師範大學<br>機電工程學系<br>99<br>In this study, aluminum and gallium co-doped zinc oxide (AGZO) thin films prepared by pulsed direct current magnetron sputtering. Study the electrical properties, transmittance, heat stability, textured effect and applied on the front contact of a-Si:H solar cell. Additionally, AGZO thin films compare with AZO and GZO for total films characteristic and performance for front contact of a-Si:H solar cell. By change the relative position of Al sheet on the GZO target to decide the Al doping concentration of AGZO films. To investigate the heat stability of AGZO fi
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Coppa, Brian Joseph. "Electrical, chemical, and structural characterization of Au Schottky contacts on remote plasma-treated n-type ZnO(0001)." 2003. http://www.lib.ncsu.edu/theses/available/etd-07162003-111302/unrestricted/etd.pdf.

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Lai, Bo-Ting, and 賴柏廷. "Investigations on the cosputtering transparent electrode ohmic contacts to ZnO thin films and its applications to light-emitting diode." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/8jz9u9.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>98<br>In thi study a undoped zinc oxide thin film was deposited onto a sapphire substrate at room temperature by using an RF magnetron sputter system. The vacuum thermal treatment process changed the concentration of electrons to 1017 ~ 1018 cm-3 and increased crystallization. The thin film was then established with a transmission line model, and the changes and mechanisms of the ohmic contacts before and after thermal annealing were measured by a semiconductor parameter analyzer, XRD analyzer and visible light-UV spectrometer. Research results showed that the
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Wu, Nan-Jay, and 吳南傑. "Investigations on the Cosputtered Transparent Electrode Ohmic Contacts to N-GaN and Its Applications to P-ZnO/N-GaN Heterojunction Diode." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/8v57t9.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>100<br>In this study, the transmission line model produced in the GaN epitaxial layer at room temperature was usingt the RF magnetron sputtering system, the zinc oxide and the indium tin oxide were slected for the sputtering targets to deposite the indium tin oxide-zinc oxide conductive film a theoretical value of the zinc atoms doping concentration for 33% as the ohmic contact electrodes., Auger electron spectroscopy of the depth distribution of visible light - ultraviolet spectrometer measured ohmic contact characteristics change mechanism. The results show th
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Hong, Jhen-Dong, and 洪榛棟. "Investigations on The Ni/ITO Metal Electrode Ohmic Contacts to AlN-ZnO Cosputtered Films and Its Applications to Light-Emitting Diode." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/n34wa4.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>99<br>In this study a undoped zinc oxide and AlN codoped zinc oxide thin films was deposited onto a si substrate at room temperature by using an RF magnetron cosputtering system using AlN and ZnO targets. The O2 and N2 thermal treatment process changed the concentration of electrons and holes to 1015 ~ 1016 cm-3 and 1017 ~ 1018 cm-3. The thin film was then established with a transmission line model, and the changes and mechanisms of the ohmic contacts before and after thermal annealing were measured by a semiconductor parameter analyzer, Auger electron spectros
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Lai, Kaung-Chieh, and 賴光傑. "Study on the low resistivity of Ag/AZO bi-layer transparent electrode ＆ The low resistivity and transparent i-ZnO/AZO ohmic contacts to p-type GaN." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/15533006992189555436.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>95<br>(I) Transparent conductive oxides of Al-doped ZnO Transparent conductive Al-doped ZnO thin films were prepared on sapphire substrate by radio frequency (RF) diode sputtering with Ar gas and an Al2O3-mixed ZnO ceramic target. The samples, with constant thickness of 0.6μm, were prepared under various Ar partial pressure ratios in the range of 5sccm to 14sccm, then annealed at temperatures ranging from 700°C to 1000°C for 1min in a vacuum furnace. The electrical, optical and X-ray diffraction properties were evaluated. The produced AZO films showed resistivit
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Mtangi, Wilbert. "Electrical characterization of process, annealing and irradiation induced defects in ZnO." Thesis, 2012. http://hdl.handle.net/2263/30356.

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A study of defects in semiconductors is vital as defects tend to influence device operation by modifying their electrical and optoelectronic properties. This influence can at times be desirable in the case of fast switching devices and sometimes undesirable as they may reduce the efficiency of optoelectronic devices. ZnO is a wide bandgap material with a potential for fabricating UV light emitting diodes, lasers and white lighting devices only after the realization of reproducible p-type material. The realization of p-type material is greatly affected by doping asymmetry. The self-compensation
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Kamanová, Silvia. "Juhoafrická čierna teológia zo stredoeurópskej perspektivy." Doctoral thesis, 2017. http://www.nusl.cz/ntk/nusl-368420.

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McCanna, David. "Development of Sensitive In Vitro Assays to Assess the Ocular Toxicity Potential of Chemicals and Ophthalmic Products." Thesis, 2009. http://hdl.handle.net/10012/4338.

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The utilization of in vitro tests with a tiered testing strategy for detection of mild ocular irritants can reduce the use of animals for testing, provide mechanistic data on toxic effects, and reduce the uncertainty associated with dose selection for clinical trials. The first section of this thesis describes how in vitro methods can be used to improve the prediction of the toxicity of chemicals and ophthalmic products. The proper utilization of in vitro methods can accurately predict toxic threshold levels and reduce animal use in product development. Sections two, three and four describe t
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