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Dissertations / Theses on the topic 'CuGaS2'

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Published: 6 September 2023
Last updated: 25 July 2025

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1

Branch, Matthew Stewart. "Epitaxial growth and characterisation of CuGaS2." Thesis, Nelson Mandela Metropolitan University, 2006. http://hdl.handle.net/10948/438.

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In this work, the growth and characterisation of the chalcopyrite semiconductor CuGaS2 is presented. The purpose of this study is to gain a better understanding of the defect chemistry of this class of materials through a systematic study relating the structural and optical properties to the composition of thin films grown by metalorganic vapour phase epitaxy. Details associated with the optimisation of the growth process are presented in a format relating the changes in the composition and morphology to variations in the growth process. The structural properties of thin films grown on GaAs(00
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2

Movaghgharnezhad, Shirin. "Electrodeposition of CuGaS2 from Aqueous and Non-aqueous Electrolyte Mixtures." OpenSIUC, 2017. https://opensiuc.lib.siu.edu/theses/2251.

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Shirin Movaghgharnezhad for the master of science degree in mechanical engineering, presented on November 6, 2017, at Southern Illinois University Carbondale. TITLE: Electrodeposition of CuGaS2 from Aqueous and Non-Aqueous Electrolyte Mixtures MAJOR PROFESSOR: Dr. Ian I. Suni Electrodeposition of CuGaS2 from aqueous and non-aqueous electrolyte mixtures is reported in this work. Acetonitrile complexation is used to shift the reduction potential of Cu (II) in the cathodic direction. With the presence of 50% acetonitrile, the difference between the peak reduction currents of Cu (II) and Ga (III)
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3

Capet, Frédéric. "Évolution sous pression hydrostatique des propriétés structurales, optiques et électroniques du semi-conducteur ternaire : cugas2." Lille 1, 1995. http://www.theses.fr/1995LIL10148.

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Le travail présente consiste en l'étude d'un semi-conducteur ternaire: CuGaS2. La famille de la chalcopyrite dont fait partie ce compose suscite, à l'heure actuelle, un intérêt grandissant compte tenu des applications possibles dans le domaine de l'optique non linéaire, des détecteurs photovoltaïques et des cellules solaires. En dépit d'une grande similitude structurale entre CuGaS2 et son analogue binaire (ZnS), la largeur de la bande interdite du compose ternaire est notablement plus faible. A partir de mesures de l'absorption optique, nous montrons l'évolution, sous pression hydrostatique,
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4

Meeder, Alexander. "Defektspektroskopie an CuGaSe2 aus der halogenunterstützten Gasphasenabscheidung." [S.l.] : [s.n.], 2004. http://www.diss.fu-berlin.de/2004/15/index.html.

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5

Gerhard, Andreas. "Elektrische Defektspektroskopie an CuGaSe2 und verwandten Halbleiterdünnschichten." [S.l. : s.n.], 2000. http://www.diss.fu-berlin.de/2000/142/index.html.

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6

Fischer, Daniel. "Eigenschaften von CuGaSe2-Dünnschichten hergestellt mit chemischer Gasphasenabscheidung." [S.l. : s.n.], 2000. http://www.diss.fu-berlin.de/2001/27/index.html.

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7

Klenk, Markus. "CuGaSe2-Absorberschichten aus mehrstufigen Prozessen : Materialcharakterisierung und Solarzellenherstellung /." [S.l. : s.n.], 2001. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB9673658.

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8

Schuler, Steffen. "Transporteigenschaften und Defekte in polykristallinen CuGaSe2-Schichten und Heterostrukturen." [S.l. : s.n.], 2002. http://www.diss.fu-berlin.de/2002/294/index.html.

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9

Schmid, Martina [Verfasser]. "Optik der CuGaSe2-Solarzelle für hocheffiziente Tandemkonzepte / Martina Schmid." Berlin : Freie Universität Berlin, 2010. http://d-nb.info/1024006301/34.

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10

Romain, Nahel. "Caractérisations de couches minces de CuGaSe2 obtenues par MOVCD." Montpellier 2, 1999. http://www.theses.fr/1999MON20203.

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Des echantillons en couches minces de cu xga yse z proches de la stchiometrie de valence (x + 3y 2z) ont ete fabriques par mocvd a partir de trois composes organometalliques. Diverses compositions allant des riches en cuivre aux riches en gallium ont pu etre analysees et caracterisees. Quelque soit la composition, une forte orientation preferentielle est observee dans la direction 112. La structure cristalline et la largeur de bande interdite du cu 2se, du cugase 2, du cuga 3se 5 et du ga 2se 3 fabriques ont ete etablies. Les caracterisations electriques revelent une densite de porteurs elevee
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11

Luckert, Franziska. "Optical properties of the chalcopyrite semiconductors CuInSe₂, CuInS₂ and CuGaSe₂." Thesis, University of Strathclyde, 2012. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=25805.

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CuInSe₂, CuInS₂ and CuGaSe₂ are I-III-VI₂ compound semiconductors with a chalcopyrite structure. These ternary compounds exhibit favourable properties, such as direct band gaps and high absorption coefficients, for application as absorber layers in thin-film solar cells. Recently Cu(In,Ga)Se₂ based photovoltaic devices have demonstrated conversion efficiencies of 20.3 % which is the highest amongst polycrystalline thin-film solar cell technologies. This thesis describes a study of excitonic recombination processes in high quality CuInSe₂, CuInS₂ and CuGaSe₂ single crystals using photoluminesce
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12

Bauknecht, Andreas. "CuGaSe2 für die Anwendung in der Photovoltaik metallorganische Gasphasenepitaxie und optische Charakterisierung /." [S.l. : s.n.], 1999. http://www.diss.fu-berlin.de/2000/19/index.html.

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13

Fiedeler, Ulrich. "Rekombination und Diffusion in CuGaSe2-Solarzellen Photolumineszenz- und Quanteneffizienzuntersuchungen an MOCVD gewachsenen Absorbern /." [S.l.] : [s.n.], 2001. http://www.diss.fu-berlin.de/2002/26/index.html.

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14

Meyer, Nikolaus. "Phasenbildung im Raum Cu-Ga-Se und halogenunterstützte Gasphasenabscheidung von CuGaSe2-Absorberschichten für Solarzellen." [S.l. : s.n.], 2000. http://www.diss.fu-berlin.de/2000/74/index.html.

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15

Fuertes, Marrón David. "Structural and electronic characterisation of thin film solar cells based on CVD grown CuGaSe2." [S.l. : s.n.], 2003. http://www.diss.fu-berlin.de/2003/228/index.html.

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16

Rivalland, Adrien. "Elaboration et caractérisation de cellules solaires photovoltaïques tandem CuGaSe₂ / silicium cristallin : vers une approche monolithique à deux terminaux." Thesis, Nantes, 2020. http://www.theses.fr/2020NANT4065.

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Pour dépasser la barre théorique de 30% de rendement de conversion, les cellules solaires en tandem basées sur des sous cellules en silicium cristallin (c-Si) sont l'une des architectures les plus prometteuses. En outre, une approche monolithique à deux terminaux utilisant des couches minces à grand gap comme cellule supérieure ne nécessiterait pas de modification significative des modules solaires existants. L’absorbeur Cu(In,Ga)(S,Se)₂ (CIGS) est un candidat prometteur grâce à sa haute efficacité (le record de rendement en module est d'environ 19%) et à son énergie de bande interdite accorda
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17

ZOUAD, SARDI MAMA. "Analyses et proprietes electrochimiques des composes de structure chalcopyrite : cuinse#2, cugase#2 et cu (in, ga) se#2." Paris 6, 1989. http://www.theses.fr/1989PA066532.

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On decrit deux methodes d'analyse des semi-conducteurs de formule generale cumse#2 (m=in?ga ou ub+ga) qui sont utilises dans la fabrication de photopiles solaires en couche mince. La premiere est effectuee apres mise en solution des echantillons. Les metaux sont determines par polarographie a impulsions et le selenium par amperometrie. Pour l'analyse des metaux, une methode originale d'elimination de l'interference du selenium a ete mise au point, qui permet d'operer une analyse complete en environ une heure, a partir de 0,35 mg de materiau. La seconde technique a consiste en une oxydation ano
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18

Федорова, Е. А. "Гидрохимический синтез пленок со структурой халькопирита CuGaSe2 и кестерита Cu2ZnSnSe4 : диссертация на соискание ученой степени кандидата химических наук : 02.00.04". Thesis, б. и, 2016. http://hdl.handle.net/10995/41621.

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19

Федорова, Е. А. "Гидрохимический синтез пленок со структурой халькопирита CuGaSe2 и кестерита Cu2ZnSnSe4 : автореферат диссертации на соискание ученой степени кандидата химических наук : 02.00.04". Thesis, б. и, 2016. http://hdl.handle.net/10995/41612.

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20

Renaud, Adèle. "Semi-conducteurs de type p pour une application en cellules solaires à colorant." Nantes, 2013. https://archive.bu.univ-nantes.fr/pollux/show/show?id=bc5d055e-878e-4b2d-af7c-44949293c4df.

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Les travaux de thèse portaient sur la réalisation de cellules à colorant de type p (DSSCp) avec une photocathode autre que NiO. L’objectif était de remplacer ce semi-conducteur de type p par des matériaux plus transparents, plus conducteurs et présentant une bande de valence plus basse en énergie pour permettre de générer des tensions en circuit ouvert (VOC) plus élevées. Dans ce cadre, les composés CuGaO2, LaOCuS et ZnO:N ont été synthétisés sous la forme de nanoparticules, caractérisés par diffraction des rayons X et leurs potentiels de bandes plates (Vbp) déterminés par spectroscopie d’impé
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21

Kessler, John. "Etude photoelectrochimique des alliages cuin::(1-x)ga::(x)se::(2) : relation entre les proprietesphotovoltaiques des couches minces de cugase::(2) et leur composition." Paris 7, 1988. http://www.theses.fr/1988PA077189.

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L'etude des echantillons massifs de cuin::(1-x)ga::(x)se::(2) de type p permet de mettre au point la solution electrolytique acide en presence du couple redix v**(2+/3+). Etude des positions energetiques des bandes par mesures capacitives. Etude de la variation de la bande interdite en fonction de x et mesure des longueurs de diffusion par l'evolution du photocourant en fonction du potentiel. Etude des proprietes optiques et electroniques des couches minces cugase::(2) de type p en fonction des ecarts a la stoechiometrie
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22

Imanieh, Mohsen. "Growth and characterisation of CuInSe←2 and CuGA←XIn←1-←XSe←2 single crystals." Thesis, University of Salford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.253047.

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23

Kessler, John. "Etude photoélectrochimique des alliages Culn-x GaxSe relation entre les propriétés photovoltaïques des couches minces de CuGaSex et leur composition /." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37614733f.

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24

Goudreault, Roger D. "Some properties of the semimagnetic semiconductor alloy system Cd2x(CuGa)yMn2zTe2." Thesis, University of Ottawa (Canada), 1988. http://hdl.handle.net/10393/5499.

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25

Yarhzou, Lahsen. "Elaboration et caractérisation des matériaux photovoltai͏̈ques CuGa(Se,Te)2 massifs et en couches minces." Perpignan, 1993. http://www.theses.fr/1993PERP0158.

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Le but de ce travail est la synthese et l'etude du materiau photovoltaique cuga(se#xte#1##x)#2. Les materiaux massifs ont ete elabores par refroidissement lent du liquide stchiometrique. Ils ont ete etudies aux rayons x, a la microsonde electronique et en luminescence. Ces etudes ont montre qu'ils forment des solutions solides. L'etude de luminescence, notamment, a permis de determiner le gap en fonction de x, et d'identifier certains defauts de reseau. A partir du materiau massif, des couches minces ont ete realisees par une methode simple utilisant le transport chimique a courte distance en
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26

Chebabi, Abramides Gisela. "Effectiveness of an Integrated Vector Management control strategy for the tiger mosquito (Aedes albopictus): a case study in Sant Cugat del Vallès (Barcelona)." Doctoral thesis, Universitat Autònoma de Barcelona, 2012. http://hdl.handle.net/10803/117521.

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El mosquito tigre, Aedes albopictus (Skuse, 1894), es una especie invasora que actualmente se encuentra en los cinco continentes, extendiéndose desde su área nativa en el sudeste de Asia a través del comercio internacional de neumáticos usados y del bambú de la suerte. En Cataluña fue detectado por primera vez en el año 2004, en el municipio Sant Cugat del Vallès, y se expandió rápidamente en los últimos cinco años a más de 200 municipios de Cataluña y Alicante. Esta especie es un vector de diferentes arbovirosis, y ha sido asociada con la transmisión del virus del dengue y la chikungunya en
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27

Makoond, Nirvan Chandra. "Structural diagnosis of masonry heritage : contributions to non-destructive testing, structural health monitoring and risk assessment." Doctoral thesis, Universitat Politècnica de Catalunya, 2020. http://hdl.handle.net/10803/670624.

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Many cultural heritage sites across the globe consist of masonry structures. To ensure the preservation of such structures, an accurate evaluation of their current structural condition is often of utmost importance. However, recurrent uncertainties regarding material properties and the complex interaction among structural elements often makes this a challenging task. As a consequence, there has been a considerable research effort on the development of methods and tools that can facilitate this task, and experts responsible for the evaluation of unique masonry structures usually need to weigh i
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28

Sung, Bi-Shiung, and 宋碧雄. "Preparation of Optical Absorber CuGaS2 Thin Films by Non-vacuum Processes for Solar Cells Applications." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/vyew38.

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碩士<br>國立虎尾科技大學<br>材料科學與綠色能源工程研究所<br>99<br>The thesis is focused on the application of CuGaS2 for solar cell absorber layer materials. In this study, the nanoparticle ink is prepared using wet-ball milling, and then the ink is deposited on a substrate to form a precursor layer by spin coating. The ink consists of two compound powders, CuS and Ga2S3. By adjust Cu/Ga ratio of CuS to Ga2S3. The precursor layer is placed in RTA furnace, and then heated at the temperature between 400℃ and 800℃ to form the compound layer with chalcopyrite structure. Non-vacuum processing is capable of reducing the co
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29

Tomar, Nitin Kumar. "Studies on the synthesis and applications of I-III-VI2 semiconductor nanocrystals." Thesis, 2019. https://etd.iisc.ac.in/handle/2005/5122.

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Nanomaterials have been a topic of extensive research for the past several decades. This is because their properties act as a bridge between their bulk and atomic counterparts. Broadly, nanoparticles can be characterized as one dimensional, 2 dimensional or 3 dimensional depending on the number of directions in which particle size is limited. A semiconductor nanoparticle which is dimensionally limited in all the three directions is known as a Quantum Dot. In Quantum dots (QDs) the photoexcited charge carriers are constrained in a small volume and are not free to move in any direction. This cau
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30

CHEN, WEI, and 陳瑋. "Epitaxial Growth of CuGaSe2 Thin Film." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/76938742942880955360.

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31

Tsai, Kenny, and 蔡坤益. "Improved quality of CuGaSe2 epitaxial thin film." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/72349778972592564614.

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32

Chien-Hung, Lin, and 林建宏. "A study on interdiffusion of CuGaSe2/CuInSe2." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/24605043863286892308.

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33

Lee, Yu-Chin, and 李昱嶔. "Characteristics of P-type CuGaO2 Optoelectronic Semiconductor." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/83771986340068153857.

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碩士<br>亞洲大學<br>光電與通訊學系<br>103<br>In this study, we prepared CuGaO2 film by using sputtering method and the annealing under controlled nitrogen atmosphere, with the attempt to identify the structure and optoelectronic properties. During the Cu-Ga-O phase change, CuGa2O4 and CuO were the intermediate phases of the reaction for forming CuGaO2, the temperature of CuGaO2 formation is 750°C. CuGaO2 had its structure remaining steady at high temperature, and had its cross-section formed by stacked polygonal microstructure. With the increase of the annealing temperature, the CuGaO2 film had its surface
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34

Permanasari, Rina. "Electrochemical deposition of thin film CuGaSe��� for photovoltaics." Thesis, 2004. http://hdl.handle.net/1957/33321.

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CuGaSe���/CuInSe��� tandem junction solar cell is currently being pursued to be a low cost and high efficiency renewable energy source. A reported theoretical efficiency of 33.9% solar cells has been the motivation to fabricate CuGaSe��� films in a simple and low cost method. Electrodeposition is a potentially suitable method to obtain the CuGaSe��� films. A better understanding of the electrodeposition process is required to optimize the process. Focusing on the manufacture of CuGaSe��� film, the reaction accompanying the electrodeposition of CuGaSe��� using rotating disk electrode from cupri
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35

LAI, HSIN CHIH, and 賴新枝. "PL Spectrums of CuInSe2 and CuGaSe2 Thin Films." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/12924407775684672963.

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36

Chao, Bo-Heng, and 趙伯亨. "Device modeling and analysis of CuGaSe2 solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/91360894511654594266.

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碩士<br>國立東華大學<br>電機工程學系<br>99<br>The numerical simulation of CuGaSe2/CdS photovoltaic devices was studied by using AMPS. The simulated results of the energy band diagram and performance parameters for the CuGaSe2 (CGS) solar cells were analyzed. The effects of the interface properties, buffer properties, and conduction band offset between CdS and CGS films on the CGS solar cell were investigated. The effects of various buffers including CdS, ZnS, In(OH,S), or ZnMgO films on the performance of CGS solar cells were studied.
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37

Chen, Chien-Ming, and 陳建銘. "Fabrication of CuGaSe2/Si heterostructures for solar-cell applications." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/62378035998612047542.

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碩士<br>國立中山大學<br>材料與光電科學學系研究所<br>104<br>For the composition control and testing electric properties, polycrystalline CuGaSe2 (CGSe) films with near-stoichiometric compositions were deposited by three-source co-evaporation on glass without the substrate rotation. XRD analysis veried that the film is single phase with the chalcopyrite structure. From Cu-rich to Ga-rich regions for the film grown on a glass substrate,the film resistivities varied from 3.7x10-1 Ω‧cm to 7.4x104 Ω‧cm. Further experiments on the formation of Ohmic contacts onto CGSe films indicated that the remaining Cu-Se phase on th
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38

Meeder, Alexander [Verfasser]. "Defektspektroskopie an CuGaSe2 aus der halogenunterstützten Gasphasenabscheidung / von Alexander Meeder." 2004. http://d-nb.info/970273320/34.

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39

Fischer, Daniel [Verfasser]. "Eigenschaften von CuGaSe2-Dünnschichten hergestellt mit chemischer Gasphasenabscheidung / von Daniel Fischer." 2000. http://d-nb.info/961806974/34.

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40

Gerhard, Andreas [Verfasser]. "Elektrische Defektspektroskopie an CuGaSe2 und verwandten Halbleiterdünnschichten / vorgelegt von Andreas Gerhard." 2000. http://d-nb.info/961410752/34.

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41

Gu, GinLern, and 古俊能. "A Study on Growth and Properties of Epitaxial CuGaSe2 Thin Films." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/08728161429271529009.

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博士<br>國立中山大學<br>材料科學研究所<br>87<br>CuGaSe2 chalcopyrite compound was grown heteroepitaxially on (001)GaAs substrate by molecular beam epitaxy (MBE) system. Phase identification and crystalline orientation of thin films were examined by X-ray diffraction measurement. Surface morphology and microstructure were observed by electron microscopy. Chemical composition was measured by electron probe microanalyzer (EPMA). Optical and electrical properties were characterized by photoluminescence (PL) measurement, photoreflectance (PR) measurement, and four-point probe method. Epitaxial and seco
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42

Deniozou, Thalia [Verfasser]. "Properties of the CuGaSe2 and CuInSe2 (001) surface / vorgelegt von Thalia Deniozou." 2005. http://d-nb.info/978153707/34.

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43

Schuler, Steffen [Verfasser]. "Transporteigenschaften und Defekte in polykristallinen CuGaSe2-Schichten und Heterostrukturen / von Steffen Schuler." 2002. http://d-nb.info/966078659/34.

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44

Klenk, Markus [Verfasser]. "CuGaSe2-Absorberschichten aus mehrstufigen Prozessen : Materialcharakterisierung und Solarzellenherstellung / vorgelegt von Markus Klenk." 2001. http://d-nb.info/963488686/34.

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45

Chuang, Wen-Jie, та 莊雯倢. "Numerical simulation of CuInSe2/CuGaSe2 and CuInSe2/α-Si:H tandem solar cells". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/80918213970436640941.

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碩士<br>國立東華大學<br>電子工程研究所<br>97<br>In this thesis, we research the impacts of the top cell performance on the efficiency of tandem solar cells by numerical study. The device physics and parameters of the top cells as the input variables for the device simulation tool of AMPS-1D to study the performance of thin-film tandem solar cells. The band gap energy of the absorber layer for the top cells is employed as the variables to improve the conversion efficiencies of the tandem solar cells. In order to understand the effects of device loss, firstly we vary the junction parameters of CdS/CuGaSe2 sola
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46

Chen, Ching-yun, and 陳靖允. "The Study of theCuInSe2 Characteristics and The Synthesis of CuGaSe2 Nano Powders." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/32551579881671454234.

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碩士<br>國立中山大學<br>材料科學研究所<br>94<br>In this experiment,we used the solvothermal method that described by Y.Qian et al,to synthesize nano powder which have different morphology.We had demonstrated it that by controlling and changing the temperature,reaction time and washing agents,to control the size and it leads to the change of the energy gap.In others,we changed the ,and used the same method to synthesize CuGaSe2 powder.It was used to improve the efficirncy of the solar cell devices. The synthetic temperature 180℃ and rection time 48hrs are the best condition in nano spherical powder exper
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47

Liu, Yi-heng, and 劉以珩. "Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/8ghv47.

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碩士<br>國立中山大學<br>材料與光電科學學系研究所<br>106<br>Current silicon solar cell is developing towards ultra-thin feature for cost lowering, recombination suppressing and potential flexible applications. In this work, we examine the viability of chalcopyrite materials assisting ultra-thin solar cells performance with simulation software AFORS-HET. P type silicon with n type surface doping is support with CISe for light absorption, between them compositional-variated SiGe buffer layer to lower lattice mis-match (SCH-1 layout). Simulation shows Ge induces narrow bandgap and large energy barrier, witch severel
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48

Bauknecht, Andreas [Verfasser]. "CuGaSe2 für die Anwendung in der Photovoltaik : metallorganische Gasphasenepitaxie und optische Charakterisierung / von Andreas Bauknecht." 1999. http://d-nb.info/96112654X/34.

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49

Chen, Chien-An, and 陳建安. "A Studey of Silicon Dioxide Deposited by Liquid Phase Deposition Method on CuInSe2 and CuGaSe2." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/11431030504804507720.

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碩士<br>國立中山大學<br>材料科學研究所<br>88<br>In this paper, we use a room temperature processing system, Liquid Phase Deposition(LPD) method, to grow silicon dioxide. The advantages are cheap equipment, low temperature growth, and no thermal stress. The quality is good enough to be used in IC devices. To inverstigate the properties of silicon Dioxide, we have done different physical and chemical test, including AES,TEM,FTIR,P-etch rate. We used the high frequency C-V curve to study the interface properties. The leakage current help to clarify the film quality. Moreover, we also discuss the growth mechanis
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50

Liao, Shih-Yun, and 廖士運. "Preparation and Characterization of chalcopyrite CuGaSe2 polycrystalline thin films for the photovoltaic solar cells materials." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/tw5wqw.

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碩士<br>國立虎尾科技大學<br>材料科學與綠色能源工程研究所<br>97<br>Copper indium gallium selenide (CuIn(1-x)GaxSe2, CIGS) has attracted much attentions for its applications in thin film solar cells. Copper gallium selenide (CuGaSe2) thin film has been used in Mo/CGS/CIS/CdS/ZnO solar cell fabrication as a absorber layer and it plays an important role in improving efficiency. We propose a method to prepare CuGaSe2 films by using mechanical milling to form a paste or an ink which is suitable for coating on silicon substrates in the form of a thin precursor layer with dual-source precursors, Cu2Se and Ga2Se3. Composit
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