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Journal articles on the topic 'CuGaS2'

Author: Grafiati

Published: 6 September 2023

Last updated: 25 July 2025

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1

Son, Namgyu, Jun Heo, Young-Sang Youn, Youngsoo Kim, Jeong Do, and Misook Kang. "Enhancement of Hydrogen Productions by Accelerating Electron-Transfers of Sulfur Defects in the CuS@CuGaS2 Heterojunction Photocatalysts." Catalysts 9, no. 1 (2019): 41. http://dx.doi.org/10.3390/catal9010041.

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CuS and CuGaS2 heterojunction catalysts were used to improve hydrogen production performance by photo splitting of methanol aqueous solution in the visible region in this study. CuGaS2, which is a chalcogenide structure, can form structural defects to promote separation of electrons and holes and improve visible light absorbing ability. The optimum catalytic activity of CuGaS2 was investigated by varying the heterojunction ratio of CuGaS2 with CuS. Physicochemical properties of CuS, CuGaS2 and CuS@CuGaS2 nanoparticles were confirmed by X-ray diffraction, ultraviolet visible spectroscopy, high-

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2

Miyake, Hideto, Moriki Hata, and Koichi Sugiyama. "Solution growth of CuGaS2 and CuGaSe2 using CuI solvent." Journal of Crystal Growth 130, no. 3-4 (1993): 383–88. http://dx.doi.org/10.1016/0022-0248(93)90523-y.

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3

Guan, Yunxiao, Yixuan Shen, Jiang Wu, and Weizhi Wang. "Defect engineering in CuGaS₂ for highly efficient photocatalytic CO₂ reduction." Journal of Physics: Conference Series 3043, no. 1 (2025): 012026. https://doi.org/10.1088/1742-6596/3043/1/012026.

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Abstract Catalysts have remained a critical limiting factor in the photocatalytic reduction and resource utilization of CO2. Herein, we developed a defect engineering strategy to create abundant sulfur vacancies in conventional narrow-bandgap CuGaS2 material, obtaining a novel V-CuGaS2 photocatalyst. The optimized catalyst demonstrated a CO production rate of 9.52 μmol g-1 h-1, representing an 18.06-fold enhancement over pristine CuGaS2. The superior catalytic activity originates from the localized electric field induced by sulfur vacancies, which significantly improves carrier separation/tran

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4

Ullah, Shafi, Miguel Mollar, and Bernabé Marí. "Electrodeposition of CuGaSe2 and CuGaS2 thin films for photovoltaic applications." Journal of Solid State Electrochemistry 20, no. 8 (2016): 2251–57. http://dx.doi.org/10.1007/s10008-016-3237-0.

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5

Qin, Ming Sheng, Fu Qiang Huang, and Ping Chen. "Wide Spectrum Absorption of CuGaS₂ with Intermediate Bands." Applied Mechanics and Materials 148-149 (December 2011): 1558–61. http://dx.doi.org/10.4028/www.scientific.net/amm.148-149.1558.

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The intermediate bands materials CuGa1-xQxS2 (Q = Ge, Sn) were investigated, and the narrow half-ﬁlled intermediate bands were successfully introduced into the chalcopyrite CuGaS2 when Ga3+ ion were partially replaced by Ge4+(Sn4+) impurities. The absorption edge of CuGa1-xQxS2 red shifts greatly with the increasing in the doping content due to the form of Ge-4s (Sn-5s) and S-3p hybridization orbits intermediate band, even small Q-doping content(2mol %), considerable red shifts are still achieved. CuGa1-xQxS2 (Q = Ge, Sn) with IBs extend the range of solar spectrum and could be the excellent c

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6

Massé, George. "Luminescence of CuGaS2." Journal of Applied Physics 58, no. 2 (1985): 930–35. http://dx.doi.org/10.1063/1.336168.

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7

Berestok, Taisiia, Pablo Guardia, Sònia Estradé, et al. "CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals." Nanomaterials 8, no. 4 (2018): 220. http://dx.doi.org/10.3390/nano8040220.

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8

Grechenkov, Jurij, Aleksejs Gopejenko, Dmitry Bocharov, et al. "Ab Initio Modeling of CuGa1−xInxS2, CuGaS2(1−x)Se2x and Ag1−xCuxGaS2 Chalcopyrite Solid Solutions for Photovoltaic Applications." Energies 16, no. 12 (2023): 4823. http://dx.doi.org/10.3390/en16124823.

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Chalcopyrites are ternary semiconductor compounds with successful applications in photovoltaics. Certain chalcopyrites are well researched, yet others remain understudied despite showing promise. In this study, we use ab initio methods to study CuGaS2, AgGaS2, and CuGaSe2 chalcopyrites with a focus on their less studied solid solutions. We use density functional theory (DFT) to study the effects that atomic configurations have on the properties of a solid solution and we calculate the optical absorption spectra using a many-body perturbation theory. Our theoretical simulations predict that exc

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9

Syrbu, N. N., L. L. Nemerenco, V. N. Bejan, and V. E. Tezlevan. "Bound exciton in CuGaS2." Optics Communications 280, no. 2 (2007): 387–92. http://dx.doi.org/10.1016/j.optcom.2007.08.028.

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10

Shirakata, Sho, Kazuo Murakami, and Shigehiro Isomura. "Electroreflectance Studies in CuGaS2." Japanese Journal of Applied Physics 28, Part 1, No. 9 (1989): 1728–29. http://dx.doi.org/10.1143/jjap.28.1728.

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11

Jahangirova, S. K., Sh H. Mammadov, G. R. Gurbanov, and O. M. Aliyev. "INTERACTION IN THE SYSTEM CuGaS2–PbGa2S4." Azerbaijan Chemical Journal, no. 1 (March 19, 2019): 46–49. http://dx.doi.org/10.32737/0005-2531-2019-1-46-49.

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12

Guillén, Cecilia. "Luminous Transmittance and Color Rendering Characteristics of Evaporated Chalcopyrite Thin Films for Semitransparent Photovoltaics." Solids 5, no. 1 (2024): 98–109. http://dx.doi.org/10.3390/solids5010007.

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The luminous transmittance and the color rendering index of daylight through semitransparent photovoltaic glazing are essential parameters for visual comfort indoors, and they must be considered for different absorber materials that were traditionally developed for opaque solar cells, such as those of the chalcopyrite type. With this aim, various chalcopyrite compounds (CuInSe2, CuInS2 and CuGaS2) were prepared by means of evaporation and then measured to obtain their optical absorption spectra. These experimental data are used here to calculate the solar absorptance (αS), luminous transmittan

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13

Bodnar, I. V., G. F. Smirnova, A. G. Karoza, and A. P. Chernyakova. "Vibrational Spectra of CuGaS2 and CuGaSe2 Compounds and CuGaS2xSe2(1−x) Solid Solutions2)." physica status solidi (b) 158, no. 2 (1990): 469–74. http://dx.doi.org/10.1002/pssb.2221580207.

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14

Ahmadova, Kh N., M. A. Musayev, and N. N. Hashimova. "Optical Investigation of ZnS/GaAs and CuGaS2/GaP Systems." East European Journal of Physics, no. 1 (March 3, 2025): 197–203. https://doi.org/10.26565/2312-4334-2025-1-20.

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ZnS and CuGaS2 are materials with a wide range of applications in modern optoelectronics. These materials are used for IR windows as well as lenses in the thermal band, where multispectral maximum transmission and lowest absorption are required. Precisely because of these characteristics, extensive and accurate optical research is necessary. This work has developed an ellipsometric approach for ZnS/GaAs and CuGaS2/GaP film/substrate systems to address direct ellipsometry tasks. The proposed approach enables us to determine the effects of lattice mismatch on the optical indicatrix of the stress

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15

Hase, Shunnosuke, Yoshiki Iso, and Tetsuhiko Isobe. "Bandgap-tuned fluorescent CuGaS₂/ZnS core/shell quantum dots for photovoltaic applications." Journal of Materials Chemistry C 10, no. 9 (2022): 3523–30. http://dx.doi.org/10.1039/d1tc05358b.

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16

Keating, Logan, and Moonsub Shim. "Mechanism of morphology variations in colloidal CuGaS2 nanorods." Nanoscale Advances 3, no. 18 (2021): 5322–31. http://dx.doi.org/10.1039/d1na00434d.

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17

Massé, G. "Time resolved spectra in CuGaS2." physica status solidi (a) 87, no. 2 (1985): K171—K173. http://dx.doi.org/10.1002/pssa.2210870254.

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18

Kobayashi, Satoshi, Futao Kaneko, Takeo Maruyama, Nozomu Tsuboi, and Hitoshi Tamura. "ZnyCd1-yS-CuGaS2 heterojunction diode." Electronics and Communications in Japan (Part II: Electronics) 74, no. 10 (1991): 73–81. http://dx.doi.org/10.1002/ecjb.4420741008.

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19

Elalfy, Loay, Denis Music, and Ming Hu. "First Principles Investigation of Anomalous Pressure-Dependent Thermal Conductivity of Chalcopyrites." Materials 12, no. 21 (2019): 3491. http://dx.doi.org/10.3390/ma12213491.

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The effect of compression on the thermal conductivity of CuGaS2, CuInS2, CuInTe2, and AgInTe2 chalcopyrites (space group I-42d) was studied at 300 K using phonon Boltzmann transport equation (BTE) calculations. The thermal conductivity was evaluated by solving the BTE with harmonic and third-order interatomic force constants. The thermal conductivity of CuGaS2 increases with pressure, which is a common behavior. Striking differences occur for the other three compounds. CuInTe2 and AgInTe2 exhibit a drop in the thermal conductivity upon increasing pressure, which is anomalous. AgInTe2 reaches a

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20

Nuriyev, Mubariz. "Electron Diffraction Study of CuGaS2 Film." Physical Science International Journal 5, no. 3 (2015): 165–71. http://dx.doi.org/10.9734/psij/2015/12881.

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21

Botha, J. R., M. S. Branch, A. W. R. Leitch, and J. Weber. "Radiative defects in CuGaS2 thin films." Physica B: Condensed Matter 340-342 (December 2003): 923–27. http://dx.doi.org/10.1016/j.physb.2003.09.203.

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22

Syrbu, N. N., L. L. Nemerenco, and V. E. Tezlevan. "Resonance impurity radiation in CuGaS2 crystals." Optical Materials 30, no. 3 (2007): 451–56. http://dx.doi.org/10.1016/j.optmat.2006.12.002.

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23

MARUSHKO, L. P., Y. E. ROMANYUK, L. V. PISKACH PISKACH, et al. "The reciprocal system CuGaS2+CuInSe2DCuGaSe2+CuInS2." Chemistry of Metals and Alloys 3, no. 1/2 (2010): 18–23. http://dx.doi.org/10.30970/cma3.0112.

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24

Marushko, L. P., L. V. Piskach, Y. E. Romanyuk, et al. "Quasi-ternary system CuGaS2–CuInS2–2CdS." Journal of Alloys and Compounds 492, no. 1-2 (2010): 184–89. http://dx.doi.org/10.1016/j.jallcom.2009.11.171.

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25

Kim, Myeongok, Nazmul Ahsan, Zacharie Jehl, Yudania Sánchez, and Yoshitaka Okada. "Properties of sputter-grown CuGaS2 absorber and CuGaS2/Cd1-xZnxS buffer heterointerface for solar cell application." Thin Solid Films 743 (February 2022): 139063. http://dx.doi.org/10.1016/j.tsf.2021.139063.

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26

Guzman, J. M., and R. P. Gammag. "Investigation of size-dependent band gap and spectra of spherical and tetragonal I-III-VI2 quantum dots." Journal of Physics: Conference Series 3042, no. 1 (2025): 012024. https://doi.org/10.1088/1742-6596/3042/1/012024.

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Abstract Material properties become complex as they approach dimensionless structures. Quantum dots (QDs), known as zero-dimensional structures, have shown promising properties for several applications. Many materials used in prior studies were toxic and may not be suitable for biological applications. Choosing less harmful materials, such as those in the I-III-VI2 group, may contribute to better performance in biological imaging applications. In this study, non-toxic alternatives in both spherical (SQD) and tetragonal (TQD) models were investigated using MATLAB simulations. The size-dependent

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27

Han, M. M., X. L. Zhang, and Z. Zeng. "Sn doping induced intermediate band in CuGaS2." RSC Advances 6, no. 112 (2016): 110511–16. http://dx.doi.org/10.1039/c6ra16855h.

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As an intermediate band material, the dynamical and phase stability and optoelectronic properties of Sn doped CuGaS<sub>2</sub> are systematically investigated, and suggest that CuGaS<sub>2</sub> that is moderately doped with Sn can be a potential candidate for photovoltaic applications.

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28

Shirakata, Sho, and Shigehiro Isomura. "Yb-Related Photoluminescence in CuGaS2, AgGaSe2and AgGaS2." Japanese Journal of Applied Physics 37, Part 1, No. 3A (1998): 776–80. http://dx.doi.org/10.1143/jjap.37.776.

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29

Metzner, H., Th Hahn, J. Cieslak, et al. "Epitaxial growth of CuGaS2 on Si(111)." Applied Physics Letters 81, no. 1 (2002): 156–58. http://dx.doi.org/10.1063/1.1492003.

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30

Abdullaev, N. A., Kh V. Aliguliyeva, L. N. Aliyeva, I. Qasimoglu, and T. G. Kerimova. "Low-temperature conductivity in CuGaS2 single crystals." Semiconductors 49, no. 4 (2015): 428–31. http://dx.doi.org/10.1134/s1063782615040028.

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31

Choi, In-Hwan, Sung-Hwan Eom, and Peter Y. Yu. "Dispersion of birefringence in AgGaS2 and CuGaS2." Journal of Applied Physics 82, no. 6 (1997): 3100–3104. http://dx.doi.org/10.1063/1.366150.

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32

Botha, J. R., M. S. Branch, A. G. Chowles, A. W. R. Leitch, and J. Weber. "Photoluminescence of vacuum-deposited CuGaS2 thin films." Physica B: Condensed Matter 308-310 (December 2001): 1065–68. http://dx.doi.org/10.1016/s0921-4526(01)00848-1.

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33

Cieslak, J., H. Metzner, Th Hahn, et al. "Microstructure of epitaxial CuGaS2 on Si(111)." Journal of Physics and Chemistry of Solids 64, no. 9-10 (2003): 1777–80. http://dx.doi.org/10.1016/s0022-3697(03)00197-5.

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34

Branch, M. S., P. R. Berndt, J. R. Botha, A. W. R. Leitch, and J. Weber. "Structure and morphology of CuGaS2 thin films." Thin Solid Films 431-432 (May 2003): 94–98. http://dx.doi.org/10.1016/s0040-6090(03)00208-6.

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35

Julien, C., and S. Barnier. "Properties of several varieties of CuGaS2 microcrystals." Materials Science and Engineering: B 86, no. 2 (2001): 152–56. http://dx.doi.org/10.1016/s0921-5107(01)00678-x.

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36

Tanaka, K., H. Uchiki, S. Iida, T. Terasako, and S. Shirakata. "Biexciton luminescence from CuGaS2 bulk single crystals." Solid State Communications 114, no. 4 (2000): 197–201. http://dx.doi.org/10.1016/s0038-1098(00)00035-1.

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37

Sainctavit, Ph, J. Petiau, A. M. Flank, J. Ringeissen, and S. Lewonczuk. "XANES in chalcopyrites semiconductors: CuFeS2, CuGaS2, CuInSe2." Physica B: Condensed Matter 158, no. 1-3 (1989): 623–24. http://dx.doi.org/10.1016/0921-4526(89)90413-4.

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38

Sudarsan, V., and S. K. Kulshreshtha. "Low temperature synthesis of the semiconductor CuGaS2." Materials Chemistry and Physics 49, no. 2 (1997): 146–49. http://dx.doi.org/10.1016/s0254-0584(97)01875-0.

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39

Castellanos Águila, J. E., P. Palacios, J. C. Conesa, J. Arriaga, and P. Wahnón. "Electronic band alignment at CuGaS2 chalcopyrite interfaces." Computational Materials Science 121 (August 2016): 79–85. http://dx.doi.org/10.1016/j.commatsci.2016.04.032.

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40

Tinoco, T., J. P. Itié, A. Polian, et al. "Combined x-ray absorption and x-ray diffraction studies of CuGaS2, CuGaSe2, CuFeS2 and CuFeSe2 under high pressure." Le Journal de Physique IV 04, no. C9 (1994): C9–151—C9–154. http://dx.doi.org/10.1051/jp4:1994923.

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41

Susaki, Masami, Kazuki Wakita, and Nobuyuki Yamamoto. "Luminescence of Mixed-Mode Exciton-Polariton in CuGaS2." Japanese Journal of Applied Physics 38, Part 1, No. 5A (1999): 2787–91. http://dx.doi.org/10.1143/jjap.38.2787.

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42

Miyake, Hideto, and Koichi Sugiyama. "Phase Diagram of the CuGaS2-In Pseudobinary System." Japanese Journal of Applied Physics 29, Part 2, No. 6 (1990): L998—L1000. http://dx.doi.org/10.1143/jjap.29.l998.

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43

Syrbu, N. N., M. Blazhe, I. M. Tiginyanu, and V. E. Tezlevan. "Resonance Raman scattering by excitonic polaritons in CuGaS2." Optics and Spectroscopy 92, no. 3 (2002): 395–401. http://dx.doi.org/10.1134/1.1465466.

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44

Syrbu, N. N., M. Blaje, V. E. Tezlevan, and V. V. Ursaki. "Spatial dispersion in polariton spectra of CuGaS2 crystals." Optics and Spectroscopy 92, no. 3 (2002): 402–8. http://dx.doi.org/10.1134/1.1465467.

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45

Liu, Zhongping, Qiaoyan Hao, Rui Tang, Linlin Wang, and Kaibin Tang. "Facile one-pot synthesis of polytypic CuGaS2 nanoplates." Nanoscale Research Letters 8, no. 1 (2013): 524. http://dx.doi.org/10.1186/1556-276x-8-524.

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46

Hu, J. Q., B. Deng, C. R. Wang, K. B. Tang, and Y. T. Qian. "Hydrothermal preparation of CuGaS2 crystallites with different morphologies." Solid State Communications 121, no. 9-10 (2002): 493–96. http://dx.doi.org/10.1016/s0038-1098(01)00516-6.

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47

Oh, Nuri, Logan P. Keating, Gryphon A. Drake, and Moonsub Shim. "CuGaS2–CuInE2 (E = S, Se) Colloidal Nanorod Heterostructures." Chemistry of Materials 31, no. 6 (2019): 1973–80. http://dx.doi.org/10.1021/acs.chemmater.8b04769.

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48

Susaki, Masami, Hiromichi Horinaka, and Nobuyuki Yamamoto. "Photoconductivity Decay Characteristics of Undoped p-Type CuGaS2." Japanese Journal of Applied Physics 31, Part 1, No. 2A (1992): 301–4. http://dx.doi.org/10.1143/jjap.31.301.

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49

Otoma, Hiromi, Tohru Honda, Kazuhiko Hara, Junji Yoshino, and Hiroshi Kukimoto. "Growth of CuGaS2 by alternating-source-feeding MOVPE." Journal of Crystal Growth 115, no. 1-4 (1991): 807–10. http://dx.doi.org/10.1016/0022-0248(91)90850-5.

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50

Caudillo-Flores, Uriel, Anna Kubacka, Taisiia Berestok, et al. "Hydrogen photogeneration using ternary CuGaS2-TiO2-Pt nanocomposites." International Journal of Hydrogen Energy 45, no. 3 (2020): 1510–20. http://dx.doi.org/10.1016/j.ijhydene.2019.11.019.

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