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Books on the topic 'Diode structure'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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Consult the top 21 books for your research on the topic 'Diode structure.'

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1

United States. National Aeronautics and Space Administration., ed. [Building an LO source at 1036 GHz for a receiver]: Final technical report. National Aeronautics and Space Administration, 1995.

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2

United States. National Aeronautics and Space Administration., ed. [ Building an LO source at 1036 GHz for a receiver]: Final technical report. National Aeronautics and Space Administration, 1995.

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3

C, Bensahel Daniel, Canham Leigh T, and Ossicini Stephano, eds. Optical properties of low dimensional silicon structures. Kluwer Academic Publishers, 1993.

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4

Salaneck, W. R. Conjugated polymer surfaces and interfaces: Electronic and chemical structure of interfaces for polymer light emitting devices. Cambridge University Press, 1996.

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5

Bilici, Deniz. Tarih dilde can buluyor: Çekmeköy : bir sözlü tarih çalışması. Çekmeköy Belediyesi Kültür ve Sosyal İşler Müdürlüğü, 2014.

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6

Vserossiĭskoe soveshchanie "Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory" (2nd 1998 St. Petersburg, Russia). Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory: Materialy 2-go vserossiĭskogo soveshchanii︠a︡, 2 ii︠u︡nii︠a︡ 1998 g., Sankt-Peterburgskiĭ gosudarstvennyĭ tekhnicheskiĭ universitet = Gallium nitride, indium nitride, aluminum nitride--structures and devices : technical digest : the 2nd Russian Workshop, June 2, 1998, St.-Petersburg State Technical University. Sankt-Peterburgskiĭ gos. tekhn. universitet, 1998.

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7

Cheung, Cedric Ching. Electrical characteristics of the Al-ZnS-pSi-ntSi diode structure for electroluminescent devices: Assessment ofcapacitance-voltage and current-voltage.... 1986.

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8

Lam, Norman. Analysis and design of GaAs integrated series IMPATT structures. 1988.

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9

Yoo, Hyungmo. Effect of structural parameters on resonant tunneling diode performance. 1990.

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10

Segal, David. Let There Be Lights. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198804079.003.0006.

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Chapter 6 describes solid-state lighting. It covers electroluminescence light-emitting diodes, quantum dots, organic light-emitting diodes (OLEDs), liquid crystals and liquid crystal displays. The importance of synthesis of high purity semiconductors for lighting applications is stressed. Use of materials to produce clear white light is outlined. Association structures in solution such as micelles and liquid crystals are described.

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11

Jackson, Kenneth. Silicon Devices: Structures and Processing. Wiley-VCH Verlag GmbH, 1998.

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12

Song, Jerng-Sik. The opto-electronic and structural properties of Si-Si and metal-Si interfaces. 1985.

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13

Song, Jerng-Sik. The opto-electronic and structural properties of Si-Si and metal-Si interfaces. 1985.

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14

A theoretical analysis of steady-state photocurrents in simple silicon diodes. National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1995.

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15

Solymar, L., D. Walsh, and R. R. A. Syms. Optoelectronics. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198829942.003.0013.

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The properties of light detectors and light emitting diodes (LEDs) are discussed. Electro-optic, photorefractive, and nonlinear materials are introduced. The phenomenon of phase conjugation is explained. Interaction between acoustic and light waves is shown to be possible. The significance of integrated optics is discussed. Bistability due to the action of nonlinear Fabry–Perot cavities is explained. Optical switching is shown to be an application of micro-electro-mechanical effects. The complicated phenomenon electro-absorption in quantum well structures and its applications are discussed.

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16

Stafstrom, S., J. L. Brédas, and W. R. Salaneck. Conjugated Polymer Surfaces and Interfaces: Electronic and Chemical Structure of Interfaces for Polymer Light Emitting Devices. Cambridge University Press, 2011.

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17

Stafstrom, S., J. L. Brédas, and W. R. Salaneck. Conjugated Polymer Surfaces and Interfaces: Electronic and Chemical Structure of Interfaces for Polymer Light Emitting Devices. Cambridge University Press, 2010.

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18

Stafstrom, S., J. L. Brédas, and W. R. Salaneck. Conjugated Polymer Surfaces and Interfaces: Electronic and Chemical Structure of Interfaces for Polymer Light Emitting Devices. Cambridge University Press, 2003.

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19

Launay, Jean-Pierre, and Michel Verdaguer. Electrons in Molecules. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198814597.001.0001.

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The book treats in a unified way electronic properties of molecules (magnetic, electrical, photophysical), culminating with the mastering of electrons, i.e. molecular electronics and spintronics and molecular machines. Chapter 1 recalls basic concepts. Chapter 2 describes the magnetic properties due to localized electrons. This includes phenomena such as spin cross-over, exchange interaction from dihydrogen to extended molecular magnetic systems, and magnetic anisotropy with single-molecule magnets. Chapter 3 is devoted to the electrical properties due to moving electrons. One considers first

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20

Paul, Douglas J. Si/SiGe heterostructures in nanoelectronics. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.5.

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This article describes the applications of Si/SiGe heterostructures in nanoelectronics. Silicon-germanium is now a mature field with heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductors (CMOS) products in the market place. In the research field there are many areas where Si/SiGe heterostructures are being used to bandgap engineer nanoelectronic devices resulting in significant improvements in device performance. A number of these areas have good potential for eventually reaching production, while thereare also many that allow fundamental research on the physic

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21

Solymar, L., D. Walsh, and R. R. A. Syms. Principles of semiconductor devices. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198829942.003.0009.

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p–n junctions are examined initially and the potential distribution in the junction region is derived based on Poisson’s equation. Next the operation of the transistor is discussed, both in terms of the physics and of equivalent circuits. Potential distributions in metal–semiconductor junctions are derived and the concept of surface states is introduced. The physics of tunnel junctions is discussed in terms of their band structure. The properties of varactor diodes are described and the possibility of parametric amplification is touched upon. Further devices discussed are field effect transist

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