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Journal articles on the topic 'Diode structure'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Afanasyev, Alexey V., Boris V. Ivanov, Vladimir A. Ilyin, Alexey F. Kardo-Sysoev, Maria A. Kuznetsova, and Victor V. Luchinin. "Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC." Materials Science Forum 740-742 (January 2013): 1010–13. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1010.

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This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single

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2

Polyntsev, Egor, Evgeny Erofeev, and Igor Yunusov. "The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications." Electronics 10, no. 22 (2021): 2802. http://dx.doi.org/10.3390/electronics10222802.

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In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure w

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3

Etor, David, Linzi Emma Dodd, and Claudio Balocco. "High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode." FUOYE Journal of Engineering and Technology 7, no. 2 (2022): 174–78. http://dx.doi.org/10.46792/fuoyejet.v7i2.815.

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The fabrication of metal–insulator– metal (MIM) diode using an ultrathin Al2O3 insulator layer, deposited using atomic layer deposition (ALD) is presented. The Al2O3 insulating layer was found to be highly uniform throughout the diode junction, effectively overcoming the main fabrication challenge in MIM diodes. The diodes exhibit strong non-linear current–voltage curves, have a typical zero-bias curvature coefficient of 5.4 V−1 and a zero-bias resistance of approximately 118 kΩ, a value considerably smaller than other MIM diode topologies and that allows more current to be rectified. Other re

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4

Konishi, Kumiko, Norifumi Kameshiro, Natsuki Yokoyama, Akio Shima, and Yasuhiro Shimamoto. "Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes." Materials Science Forum 821-823 (June 2015): 596–99. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.596.

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We fabricated trench Junction Barrier Schottky (JBS) diodes, and investigated the effect on the reduction of leakage current and the device yield. First, by calculating of electric field at the Schottky contact interface (Es), we found that the trench JBS structure can reduce Es one digit smaller than the planar JBS structure, setting 80o < The bevel angle θ < 90o. Then, 600 V / 50 A trench JBS diodes are developed and characterized. The leakage current of a trench JBS diode at 600V is 10-2 times smaller than that of planar JBS diode by effectively reducing Es. This enables to reduce the

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5

Zemliak, Alexander. "Models for IMPATT Diode Analysis and Optimization." WSEAS TRANSACTIONS ON COMMUNICATIONS 21 (June 30, 2022): 215–24. http://dx.doi.org/10.37394/23204.2022.21.26.

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Some of nonlinear models for high-power pulsed IMPATT diode simulation and analysis is presented. These models are suitable for the analysis of the different operational modes of the oscillator. Its take into account the main electric and thermal phenomena in the semiconductor structure and the functional dependence of the equation coefficients on the electrical field and temperature. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson equation and it is correct until 300 GHz. The second approximate mathemati

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6

Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

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This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application,

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7

Zemliak, Alexander, and Eugene Machusky. "Analysis of Electrical and Thermal Models for Pulsed IMPATT Diode Simulation." WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 20 (July 12, 2021): 156–65. http://dx.doi.org/10.37394/23201.2021.20.19.

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Some nonlinear models are presented for modeling and analyzing IMPATT high-power pulse diodes. These models are suitable for analyzing different operating modes of the oscillator. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson´s equation, and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. The temperature distribution in the semiconductor structure is o

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8

Shashikala, B. N., and B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.

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This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent elec

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9

Mohd Akhbar, Siti Amiera, Kan Yeep Choo, and Duu Sheng Ong. "Enhanced InP-based Gunn Diodes with Notch-d-doped Structure for Low-THz Applications." Journal of Engineering Technology and Applied Physics 5, no. 1 (2023): 1–4. http://dx.doi.org/10.33093/jetap.2023.5.1.1.

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In this work, Monte Carlo simulation is performed for InP Gunn diode with a notch-d-doped structure. It is found that the presence of the d-doped layer has improved the Gunn diode performance significantly as compared to the conventional notch structure. The d-doped effect caused an increment in the fundamental operating frequency and current harmonic amplitude in InP Gunn diodes by modifying the electric field profile within the device. An InP notch-d-doped Gunn diode with device length of 800 nm under 3V DC bias is capable of producing AC current signal of 287 GHz, reaching the THz region, w

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10

RAZEGHI, MANIJEH. "GaN-BASED LASER DIODES." International Journal of High Speed Electronics and Systems 09, no. 04 (1998): 1007–80. http://dx.doi.org/10.1142/s0129156498000415.

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We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail

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11

Kim, Junghun, and Kwangsoo Kim. "4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance." Energies 13, no. 18 (2020): 4602. http://dx.doi.org/10.3390/en13184602.

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In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations. The junction between P+ polysilicon and the N-drift layer forming a heterojunction diode on the side wall of the source trench region suppresses the operation of the PiN body diode during the reverse conduction state. Therefore, the injected minority carriers are completely suppressed, reducing the reverse recovery current by 73%, compared to the PiN body di

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12

Martínez-Angeles, Wendy Liliana, Orfil González-Reynoso, Gregorio Guadalupe Carbajal-Arizaga, and Mario Alberto García-Ramírez. "Electronic Barriers Behavioral Analysis of a Schottky Diode Structure Featuring Two-Dimensional MoS2." Electronics 13, no. 20 (2024): 4008. http://dx.doi.org/10.3390/electronics13204008.

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This research presents a comprehensive study of a Schottky diode fabricated using a gold wafer and a bilayer molybdenum disulfide (MoS2) film. Through detailed simulations, we investigated the electric field distribution, potential profile, carrier concentration, and current–voltage characteristics of the device. Our findings confirm the successful formation of a Schottky barrier at the Au/MoS2 interface, characterized by a distinct nonlinear I–V relationship. Comparative analysis revealed that the Au/MoS2 diode significantly outperforms a traditional W/Si structure in terms of rectification p

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13

Lee, Sung-Hoon, and Ho-Young Cha. "Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode." Micromachines 14, no. 11 (2023): 2005. http://dx.doi.org/10.3390/mi14112005.

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In this study, we developed an analytic model to design a trench metal–insulator–semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN diode. The key parameters considered in the trench MIS FP structure include trench depth, MIS dielectric material and thickness, and interface charge density of MIS. The boundary conditions are defined based on the maximum allowed electric field strengths at the dielectric and semiconductor regions. The developed model was validated using TCAD simulations. As an example, a 1 kV GaN vertical PN diode was designed using the

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14

Bercha, Artem, Mikołaj Chlipała, Mateusz Hajdel, et al. "Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities." Nanomaterials 15, no. 2 (2025): 112. https://doi.org/10.3390/nano15020112.

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We compare the optical properties of four pin diode samples differing by built-in field direction and width of the In0.17Ga0.83N quantum well in the active layer: two diodes with standard nip layer sequences and 2.6 and 15 nm well widths and two diodes with inverted pin layer ordering (due to the tunnel junction grown before the pin structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected ca

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15

Swoboda, T., K. Klinar, A. Kitanovski, and M. Muñoz Rojo. "Thermal diode based on a multilayer structure of phase change materials." Journal of Physics: Conference Series 2116, no. 1 (2021): 012115. http://dx.doi.org/10.1088/1742-6596/2116/1/012115.

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Abstract Thermal diodes are devices that allow heat to flow preferentially in one direction. This unique thermal management capability has attracted attention in various applications, like electronics, sensors, energy conversion or space applications, among others. Despite their interest, the development of efficient thermal diodes remains still a challenge. In this paper, we report a scalable and adjustable thermal diode based on a multilayer structure that consists of a combination of phase change and phase invariant materials. We applied a parametric sweep in order to find the optimum condi

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16

Ruder, Steven, Tom Earles, Christian Galstad, Michael Klaus, Don Olson, and Luke J. Mawst. "High-Power, High-Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices." Photonics 9, no. 7 (2022): 436. http://dx.doi.org/10.3390/photonics9070436.

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Three types of GaAsP metamorphic buffer layers, including linearly graded, step graded, and metamorphic superlattices, were compared for the purposes of virtual substrates for red laser diode heterostructures. Laser diodes were fabricated on GaAs substrates and relaxed GaAsP metamorphic superlattice virtual substrates. A laser diode structure with a tensile-strained quantum well on a standard miscut GaAs substrate achieved TM-polarized emission at a 638 nm wavelength with 45% peak power conversion efficiency (PCE) at a 880 mW continuous wave (CW) output power with T0 = 77 K and T1 = 266 K. An

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17

Zozulia, V., O. Botsula, and K. Prykhodko. "A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN." Radio physics and radio astronomy 29, no. 4 (2024): 317–26. https://doi.org/10.15407/rpra29.04.317.

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Subject and Purpose. The generation of millimeter-wave oscillations by a planar GaAs diode with active side boundary (ASB) is considered. The diode structure is placed on a semiconductor semi-insulating substrate and represents a GaAs channel approximately 1μm long. Its lateral surface carries a semiconductor element based on a graded-gap GaInAs layer electrically connected to the anode. The work seeks to assess the oscillation efficiency and the maximum output power of the diode oscillator loaded with a single-circuit resonator, determine the oscillation frequency cut-off, and estimate how th

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18

Li, Zai Jin, Yi Qu, Te Li, et al. "The Characteristics of Facet Coatings on Diode Lasers." Advanced Materials Research 1089 (January 2015): 202–5. http://dx.doi.org/10.4028/www.scientific.net/amr.1089.202.

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The effect of the output power with different facet passivation methods on 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with Si passivation, and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method. The laser diode with the Si passivation film is failure when current is 5.1 A, the laser diode with the ZnSe passivation film is not failure until current is 5.6 A And we analyzed the failure reasons

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19

Wang, Heng, Gaurav Jayaswal, Geetanjali Deokar, et al. "CVD-Grown Monolayer Graphene-Based Geometric Diode for THz Rectennas." Nanomaterials 11, no. 8 (2021): 1986. http://dx.doi.org/10.3390/nano11081986.

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For THz rectennas, ultra-fast diodes are required. While the metal–insulator–metal (MIM) diode has been investigated in recent years, it suffers from large resistance and capacitance, as well as a low cut-off frequency. Alternatively, a geometric diode can be used, which is more suitable due to its planar structure. However, there is only one report of a THz geometric diode based on a monolayer graphene. It is based on exfoliated graphene, and thus, it is not suitable for mass production. In this work, we demonstrate chemical vapor deposition (CVD)-grown monolayer graphene based geometric diod

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20

Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.012.

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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulato

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Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.18083.

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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulato

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22

Zhang, Linyu, Xuan Li, Wei Luo та ін. "Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers". Photonics 10, № 11 (2023): 1287. http://dx.doi.org/10.3390/photonics10111287.

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The 1.55 μm waveband integrated external cavity tunable diode lasers have excellent merits such as their small volume, low cost, low power consumption, wide tuning range, narrow linewidth, large side mode suppression ratio, and high output power. These merits have attracted many applications for the lasers, such as in wavelength division multiplexing, passive optical networks, mobile backhaul, and spectral sensing technology. In this paper, firstly, the basic structure and principle of integrated external cavity tunable diode lasers are introduced, and then two main integrated structures of 1.

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23

Storozhenko, I., та S. Sanin. "TERAHERTZ OSCILLATIONS IN InN GUNN DIODES WITH AN ACTIVE REGION LENGTH OF 1 μm AND WITH A GRADED GaInN LAYER". RADIO PHYSICS AND RADIO ASTRONOMY 27, № 4 (2022): 289–98. http://dx.doi.org/10.15407/rpra27.04.289.

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Subject and Purpose. The InN Gunn diode is known as the device capable of generating powerful oscillations atfrequencies above 300 GHz. A possible way for increasing both the microwave power and the cutoff frequency of the Gunn diode is to employ graded-gap semiconductors. The subject of this research is the process for generating electrical oscillations in InN and graded-gap GaInN Gunn diodes that involve resistive contacts at the cathode and the anode, and possess a 1-μm long active region. The research is aimed at suggesting an optimized structure for the graded-gap GaInN diode to obtain a

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24

Shackery, Iman, Atiye Pezeshki, Jae Young Park та ін. "Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor". Journal of Materials Chemistry C 6, № 40 (2018): 10714–22. http://dx.doi.org/10.1039/c8tc02635a.

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For the first time, we connect in series two α-MoTe<sub>2</sub>-based Schottky diodes (SDs) to form a back-to-back diode using the micromechanical exfoliation method. Such structure shows excellent performance toward chemical vapor sensing.

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25

M., K. Abdulhameed, Mohamad Isa M.S., Zakaria Z., and Mohsin M.K. "Controlling the Radiation Pattern of Patch Antenna Using Switchable EBG." TELKOMNIKA Telecommunication, Computing, Electronics and Control 16, no. 5 (2018): 2014–22. https://doi.org/10.12928/TELKOMNIKA.v16i5.10443.

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The advantages of the beam steering technique are the reduction of interference, save power and to maximize connectivity for point to multi points. Antenna gain degradation is a big problem in the beam steering technique. A new antenna structure is formed by combining the concept of mushroom-like EBG structure with the switching diode to produce the radation pattern control. All sides of the patch antenna are surrounded by several cells for EBG structure. In both of the the left and right sides, through a switching pin diode, the ground plane is attached to vias. The band-stop and band-pass pr

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26

Xu, Yili, and Xin Li. "Comparative Study of the Hexagonal Structure of the SiC JBS Source Region." Journal of Electronic Research and Application 9, no. 1 (2025): 61–66. https://doi.org/10.26689/jera.v9i1.9057.

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Silicon carbide (SiC) junction barrier Schottky (JBS) diode has been widely used in power electronic systems due to its excellent physical characteristics and electrical performance, and the structural design of its source area has a particularly significant impact on the performance. This study provides a comparative analysis of the SiC JBS diode performance of different hexagonal structures, aiming to provide theoretical support and practical guidance for the optimization of JBS diode performance. Through theoretical derivation, experimental verification and data processing, the paper deeply

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Hino, Shiro, Hideyuki Hatta, Koji Sadamatsu, et al. "Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode." Materials Science Forum 897 (May 2017): 477–82. http://dx.doi.org/10.4028/www.scientific.net/msf.897.477.

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External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD should be kept smaller than the built-in potential of the body diode. Embedding SBD into MOSFET with short cycle length increases maximum source-drain voltage where body diode remains inactive, resulting in high current density of SBD current. We propose a MOSFET structure where an SBD is embedded into each unit cell and an additional doping is applie

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28

Bliznyuk, Vladimir, Olga Koval, Vasiliy Parshin, Alexey Rzhanov, Alexander Tarasov, and Vladislav Grigoriev. "Spectral-spatial structure of the high-power laser diodes radiation during their operation." EPJ Web of Conferences 220 (2019): 02016. http://dx.doi.org/10.1051/epjconf/201922002016.

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The emission spectra of high-power laser diodes in the process of exploitation at different pump currents and the relationship of these spectra with the spatial structure of the field are considered. The field in laser diodes with a wide contact splits into several independent channels corresponding to the components of the radiation frequency spectrum. It is established that the number of channels and the corresponding number of spectral components of laser diode radiation increases during operation.

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29

Anutgan, Mustafa, Tamila Anutgan, and Ismail Atilgan. "SEM, EDX spectroscopy and real-time optical microscopy of electroformed silicon nitride-based light emitting memory device." European Physical Journal Applied Physics 89, no. 1 (2020): 10303. http://dx.doi.org/10.1051/epjap/2020190300.

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An ordinary amorphous silicon nitride-based p-i-n diode was electroformed under optimized process conditions, which led to its instant transformation to a semiconductor device with two-in-one properties: a bright visible light emitting diode and a resistive memory switching device; i.e. light emitting memory (LEM). In the present work, for a thorough understanding of the changes that occur during electroforming, SEM images and EDX analyses were performed on both top-view and cross-section of both as-deposited and electroformed diodes. It was seen from the top-view images that while the diode s

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Mutlu, Adem, Cem Tozlu, and Mustafa Can. "The Role of Self-Assembly Monolayers (SAM) on Schottky Diode Performance." Düzce Üniversitesi Bilim ve Teknoloji Dergisi 13, no. 1 (2025): 357–71. https://doi.org/10.29130/dubited.1530876.

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This study investigates the electrical and charge transport properties of Schottky diodes with a p-Si/TiO2/SAM/Al structure, incorporating the self-assembly monolayers (SAMs) 4", 4""-[biphenyl-4,4" diylbis(phenylimino)]dibiphenyl-4-carboxylic acid (MZ187) onto a titanium dioxide (TiO2) layer synthesized via the sol-gel method. The impact of the MZ187 molecule on diode performance was evaluated based on parameters such as the barrier height (∅b), ideality factor (n), and series resistance (Rs). Experimental results reveal that the MZ187 monolayers on TiO2 substantially enhanced diode performanc

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31

Dostálová, T., J. Kratochvíl, H. Jelínková, A. Nocar, and L. Vavříčková. "Blue (0.44 µm) and red (1.7 µm) diode laser activated bleaching—dental shade changes determination." Laser Physics Letters 20, no. 3 (2023): 035601. http://dx.doi.org/10.1088/1612-202x/acb3c9.

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Abstract Tooth whitening or bleaching is one of the most common dental procedures that optimize the white color of the teeth and minimize the simultaneous damage to the tooth structure. Light can speed up the whitening process with halogen lamps, light-emitting diodes, plasma arc lamps, and lasers. Our results show that combinations of a teeth whitening agent with laser light irradiation with a 0.44 µm blue laser diode or a 1.7 µm near-IR laser diode accelerate the whitening process not only during tooth irradiation but also within two weeks after the procedure.

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Parisini, A., P. Mazzolini, O. Bierwagen та ін. "Study of SnO/ɛ-Ga₂O₃ p–n diodes in planar geometry". Journal of Vacuum Science & Technology A 40, № 4 (2022): 042701. http://dx.doi.org/10.1116/6.0001857.

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SnO/[Formula: see text]-Ga2O3 vertical p–n diodes with planar geometry have been fabricated on c-plane Al2O3 and investigated by current–voltage measurements. The effects of the in-plane conduction through the Si-doped [Formula: see text]-Ga2O3 layer on the diode performance and their relevance have been evaluated. A significant series resistance is observed, which shows typical features of the variable range hopping transport observed in Si-doped [Formula: see text]-Ga2O3; this in-plane transport mechanism is probably induced by the columnar domain structure of this polymorph. The dependence

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33

Kim, Yoonsok, Taeyoung Kim, and Eun Kyu Kim. "Photoelectric Characteristics of a Large-Area n-MoS2/p-Si Heterojunction Structure Formed through Sulfurization Process." Sensors 20, no. 24 (2020): 7340. http://dx.doi.org/10.3390/s20247340.

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Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties. However, not much of the 2D materials research completed to date has covered large-area structures comprised of high-quality heterojunction diodes. We fabricated a large-area n-MoS2/p-Si heterojunction structure by sulfurization of MoOx film, which is thermally evaporated on p-type silicon substrate. The n-MoS2/p-Si structure possessed excellent diode characteristics such as ideality factor of

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34

Draghici, Mihai, Roland Rupp, Rolf Gerlach, and Bernd Zippelius. "A New 1200V SiC MPS Diode with Improved Performance and Ruggedness." Materials Science Forum 821-823 (June 2015): 608–11. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.608.

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Infineon’s 5th Generation of 1200V SiC diodes uses a new compact chip design, realized by an optimized hexagonal merged-pn cell structure in the active area. This allows a higher n-doping in the epi layer due to improved E-field shielding resulting in a smaller differential resistance per chip area. Thanks to the merged-pn cell structure, depending on the diode ampere rating, a surge current capability now rated up to 14 times the nominal current ensures robust diode operation during surge current events in the application. The previous generations of 1200V SiC diodes could not make full use o

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Gao, Rongyu, Hongyu Cheng, Wenmao Li, et al. "A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars." Crystals 12, no. 7 (2022): 916. http://dx.doi.org/10.3390/cryst12070916.

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In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance. However, SJ MOSFET will turn on the parasitic diodes due to fast reverse recovery, further inducing severe oscillation in the reverse recovery of the device and the corresponding adverse effect on the circuit. In this study, a fast recovery vertical superjunction (SJ) MOSFET with n-Si and p-3C-SiC pillars was studied. Unlike other structures, such as the 4H-SiC superjunction UMOSFET with a heterojunction diode or the ultra-low recovery charge

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Shmagin, V. B., K. E. Kudryavtsev, A. V. Novikov, D. V. Shengurov, D. V. Yurasov, and Z. F. Krasilnik. "Hodographs in diode-structure diagnostics." Semiconductors 49, no. 11 (2015): 1443–47. http://dx.doi.org/10.1134/s1063782615110196.

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Sang, Ling, Li Xin Tian, Fei Yang, et al. "Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes." Materials Science Forum 1014 (November 2020): 120–25. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.120.

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Designed for 6500V 4H-SiC JBS diodes, a highly-efficient termination structure of a non-uniform multiple floating field limiting rings (MFFLR) featuring with a non-uniform ring spacing and a multiple region division is studied and purposed. For each region, ring spacing is modulated independently by a multiplication factor and a linear increment factor. The non-uniform MFFLR structure is simulated and optimized for a better electric field distribution and a higher breakdown voltage. Based on the simulation results, 4H-SiC JBS diodes with the optimized non-uniform termination designs are fabric

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Chu, Shucheng, and Hirofumi Kan. "Efficient Silicon Light-Emitting-Diodes with a p-Si/Ultrathin SiO2/n-Si Structure." International Journal of Optics 2011 (2011): 1–4. http://dx.doi.org/10.1155/2011/364594.

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We report the efficient enhancement of light emission from silicon crystal by covering the silicon surface with an ultrathin (several nm) SiO2layer. The photoluminescence of Si band edge emission (1.14 μm band) at room temperature is enhanced by two orders of magnitude. Compared with a p-Si/n-Si diode, light emission from a p-Si/SiO2/n-Si diode by current injection via direct tunneling is enhanced by more than 3 orders of magnitude. The light-emission enhancement is attributed to the diminishment of nonradiation recombination at the surface/interface and to the space confinement of the carrier

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Yamamoto, Takeo, Jun Kojima, Takeshi Endo, Eiichi Okuno, Toshio Sakakibara, and Shoichi Onda. "1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current." Materials Science Forum 600-603 (September 2008): 939–42. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.939.

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4H-SiC SBDs have been developed by many researchers and commercialized for power application devices in recent years. At present time, the issues of an SiC-SBD are lower on-state current and a relatively larger-leakage current at the reverse bias than Si-PN diodes. A JBS (Junction Barrier Schottky) diode was proposed as a structure to realize a lower leakage current. We simulated the electrical characteristics of JBS diodes, where the Schottky electrode was made of molybdenum in order to optimize its performance. We fabricated JBS diodes based on the simulation with a diameter of 3.9mm (11.9 m

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Torkhov, Nikolay, Valeriy Vertegel, Mikhail Tkachenko, and Aleksandr Manko. "Optimization of the Planar Schottky Diode Structure in THz Range." Infocommunications and Radio Technologies 6, no. 2 (2023): 194–200. http://dx.doi.org/10.29039/2587-9936.2023.06.2.16.

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Optimization of the structure of a planar Schottky diode with a whisker and an air anode lead allowed to obtain 198 GHz bandwidth (fractional bandwidth of 16.5 %) at a central frequency of ~1200 GHz and reduce insertion losses of 3.4 dB at a noise temperature of ~3300 K.

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Zhang, Yong, Chengkai Wu, Xiaoyu Liu, et al. "The Development of Frequency Multipliers for Terahertz Remote Sensing System." Remote Sensing 14, no. 10 (2022): 2486. http://dx.doi.org/10.3390/rs14102486.

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This paper summarizes the development of novel Schottky-diode-based terahertz frequency multipliers. The basic structure and manufacturing process of planar Schottky barrier diodes (SBDs) are reviewed, along with other diode structures that have been proposed in the literature. A numerical modeling method for the novel diodes in the context of terahertz frequency multipliers is presented, which includes 3D electromagnetic (EM) modeling, electro-thermal modeling and modeling of physical non-ideal effects. Furthermore, a general design methodology for developing terahertz frequency multipliers i

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Lee, Hyung-Joo, Jin-Young Park, Lee-Ku Kwac, and Jongsu Lee. "Improved Optical Efficiency of 850-nm Infrared Light-Emitting Diode with Reflective Transparent Structure." Micromachines 14, no. 8 (2023): 1586. http://dx.doi.org/10.3390/mi14081586.

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This study investigated a reflective transparent structure to improve the optical efficiency of 850 nm infrared light-emitting diodes (IR-LEDs), by effectively enhancing the number of extracted photons emitted from the active region. The reflective transparent structure was fabricated by combining transparent epitaxial and reflective bonding structures. The transparent epitaxial structure was grown by the liquid-phase epitaxy method, which efficiently extracted photons emitted from the active area in IR-LEDs, both in the vertical and horizontal directions. Furthermore, a reflective bonding str

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Schemerov, I. V., A. Ya Polyakov, P. B. Lagov, et al. "The effect of trapping sites introduced by 1 MeV proton irradiation on the reverse current recovery time in Ga2O3-based Schottky diodes." Industrial laboratory. Diagnostics of materials 89, no. 7 (2023): 25–33. http://dx.doi.org/10.26896/1028-6861-2023-89-7-25-33.

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The reverse current recovery time is an important parameter of diodes, fast rectifiers and transistors which determined their high-frequency properties and area of application. Defects in the structure may sufficiency reduce the cutoff frequency and lead to overheating. The reverse recovery of the low currents in the α- and β-Ga2O3 Schottky diodes was measured and analyzed in this study. The reverse recovery time in the β-Ga2O3-based Schottky diode is limited mainly by the relaxation of the RC-circuit formed by the equivalent diode circuit and can be very low (20 nsec in this case). Irradiatio

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Graffeuil, J., L. Bary, J. Rayssac, J. G. Tartarin, and L. Lopez. "Assessing Zener-Diode-Structure Reliability From Zener Diodes' Low-Frequency Noise." IEEE Transactions on Device and Materials Reliability 7, no. 3 (2007): 468–72. http://dx.doi.org/10.1109/tdmr.2007.907407.

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Cai, Guangshuo, Caoyuan Mu, Jiaosheng Li, et al. "Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation." Micromachines 14, no. 9 (2023): 1667. http://dx.doi.org/10.3390/mi14091667.

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In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows weak influences on the forward characteristics and helps to suppress the electric field crowding. However, the breakdown voltage of the diode with simple step edge termination is still lower than that of the ideal parallel-plane one. To further enhance the breakdown voltage, we combine a p-n junction-based junction termination extension on the st

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Shen, Zhihua, Qiaoning Li, Xiao Wang, Jinshou Tian, and Shengli Wu. "Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation." Micromachines 12, no. 7 (2021): 729. http://dx.doi.org/10.3390/mi12070729.

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Vacuum diodes, based on field emission mechanisms, demonstrate a superior performance in high-temperature operations compared to solid-state devices. However, when considering low operating voltage and continuous miniaturization, the cathode is usually made into a tip structure and the gap between cathode and anode is reduced to a nanoscale. This greatly increases the difficulty of preparation and makes it difficult to ensure fabrication consistency. Here, a metal-insulator-semiconductor (MIS) structural nanoscale vacuum diode, based on thermionic emission, was numerically studied. The results

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Danilenko, Alexander A., Anton V. Strygin, Nikolay I. Mikhailov, et al. "PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD." Journal of the Russian Universities. Radioelectronics, no. 5 (December 6, 2018): 51–59. http://dx.doi.org/10.32603/1993-8985-2018-21-5-51-59.

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The article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered. The addition of electrodes to the surface of the i-region makes it possible to regulate the concentration of electrons and holes within the larger limits in compare with the single-gate structure creating enriched and depleted are-as in the structure. Programming is carried out by applying the appropriate voltage to the control electrodes of

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ALAHYARIZADEH, GH, M. AMIRHOSEINY, and Z. HASSAN. "INFLUENCE OF WAVEGUIDE LAYERS ON DEEP VIOLET InGaN DQW LASERS PERFORMANCE." Surface Review and Letters 22, no. 04 (2015): 1550051. http://dx.doi.org/10.1142/s0218625x15500511.

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This paper focuses on the performance characteristics of laser diodes (LDs) to improve output light emission properties. The optical and electrical properties such as threshold current, output power, slope efficiency, differential quantum efficiency, optical intensity and optical confinement factor has been compared for diode lasers with different waveguide structures. The waveguide structures which were analyzed in this research were a basic GaN waveguide structure, an InGaN waveguide structure, and AlInGaN waveguide structure. In addition the effects of Indium concentration and the thickness

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Aya Baquero, H. "Didactic model of the diode with Finite Element Method." Journal of Physics: Conference Series 2307, no. 1 (2022): 012031. http://dx.doi.org/10.1088/1742-6596/2307/1/012031.

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Abstract The union of two extrinsic semiconductors, one of them doped with donor impurities and the other with acceptor impurities, constitutes what is called the diode. In this paper we present a didactic model of diode, from which its electrical characteristics can be extracted, such as the structure of energy bands, the characteristic curve of current voltage, etc. To achieve this purpose the Finite Element Method (FEM) was used. In essence, the MEF is a method that allows numerically approximate the solution of partial differential equations. It is well known that, except in very particula

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Honarfar, Omid, and Abbas Ketabi. "A High-Efficiency Integrated Converter for LED Driver." Jordan Journal of Electrical Engineering 10, no. 1 (2024): 149. http://dx.doi.org/10.5455/jjee.204-1671392081.

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Enhancing the efficiency in the light-emitting-diode (LED) drivers is a noteworthy issue as it not only helps saving energy but also causes the long life span of the drivers. In this paper, a new LED driver with improved efficiency is proposed. Efficiency improvement is achieved without using any active or passive component to perform soft switching conditions. In the proposed driver, buck and buck-boost converters are integrated. The freewheeling diodes and inductors - of the two converters - are replaced by one diode and one inductor. So, the proposed driver constitutes a single-stage driver

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