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Journal articles on the topic 'Diode structure'
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1
Afanasyev, Alexey V., Boris V. Ivanov, Vladimir A. Ilyin, Alexey F. Kardo-Sysoev, Maria A. Kuznetsova, and Victor V. Luchinin. "Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC." Materials Science Forum 740-742 (January 2013): 1010–13. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1010.
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This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•103 А/сm2),what is significantly higher than similar DSRD’s parameters obtained for silicon.
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Polyntsev, Egor, Evgeny Erofeev, and Igor Yunusov. "The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications." Electronics 10, no. 22 (2021): 2802. http://dx.doi.org/10.3390/electronics10222802.
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In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.
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Etor, David, Linzi Emma Dodd, and Claudio Balocco. "High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode." FUOYE Journal of Engineering and Technology 7, no. 2 (2022): 174–78. http://dx.doi.org/10.46792/fuoyejet.v7i2.815.
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The fabrication of metal–insulator– metal (MIM) diode using an ultrathin Al2O3 insulator layer, deposited using atomic layer deposition (ALD) is presented. The Al2O3 insulating layer was found to be highly uniform throughout the diode junction, effectively overcoming the main fabrication challenge in MIM diodes. The diodes exhibit strong non-linear current–voltage curves, have a typical zero-bias curvature coefficient of 5.4 V−1 and a zero-bias resistance of approximately 118 kΩ, a value considerably smaller than other MIM diode topologies and that allows more current to be rectified. Other results including current ratio and yield of the diode also competes favorably with the state-of-the-art MIM diodes such as the recently produced metal-octadecyltrichlorosilane (OTS)-metal structure.
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Konishi, Kumiko, Norifumi Kameshiro, Natsuki Yokoyama, Akio Shima, and Yasuhiro Shimamoto. "Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes." Materials Science Forum 821-823 (June 2015): 596–99. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.596.
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We fabricated trench Junction Barrier Schottky (JBS) diodes, and investigated the effect on the reduction of leakage current and the device yield. First, by calculating of electric field at the Schottky contact interface (Es), we found that the trench JBS structure can reduce Es one digit smaller than the planar JBS structure, setting 80o < The bevel angle θ < 90o. Then, 600 V / 50 A trench JBS diodes are developed and characterized. The leakage current of a trench JBS diode at 600V is 10-2 times smaller than that of planar JBS diode by effectively reducing Es. This enables to reduce the number of low break down samples and raise the yield compared to the planar JBS structure.
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Zemliak, Alexander. "Models for IMPATT Diode Analysis and Optimization." WSEAS TRANSACTIONS ON COMMUNICATIONS 21 (June 30, 2022): 215–24. http://dx.doi.org/10.37394/23204.2022.21.26.
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Some of nonlinear models for high-power pulsed IMPATT diode simulation and analysis is presented. These models are suitable for the analysis of the different operational modes of the oscillator. Its take into account the main electric and thermal phenomena in the semiconductor structure and the functional dependence of the equation coefficients on the electrical field and temperature. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson equation and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. This model is based on the continuity equation system solution by reducing the boundary problem for the differential partial equations to a system of the ordinary differential equations. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for analysis, optimization and practical design of pulsed-mode millimetric IMPATT diodes. Its can be also utilized for diode thermal regime estimation, for the proper selection of feed-pulse shape and amplitude, and for the development of the different type of complex doping-profile high-power pulsed millimetric IMPATT diodes with improved characteristics.
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Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.
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This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.
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Zemliak, Alexander, and Eugene Machusky. "Analysis of Electrical and Thermal Models for Pulsed IMPATT Diode Simulation." WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 20 (July 12, 2021): 156–65. http://dx.doi.org/10.37394/23201.2021.20.19.
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Some nonlinear models are presented for modeling and analyzing IMPATT high-power pulse diodes. These models are suitable for analyzing different operating modes of the oscillator. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson´s equation, and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for the analysis, optimization and practical design of pulsedmode millimetric IMPATT diodes. It can also be used to evaluate the thermal behavior of diodes, to correctly select the shape and amplitude of a supply pulse, and to design various types of high-power pulsed millimeter IMPATT diodes with a complex doping profile with improved characteristics.
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Shashikala, B. N., and B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.
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This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.
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Mohd Akhbar, Siti Amiera, Kan Yeep Choo, and Duu Sheng Ong. "Enhanced InP-based Gunn Diodes with Notch-d-doped Structure for Low-THz Applications." Journal of Engineering Technology and Applied Physics 5, no. 1 (2023): 1–4. http://dx.doi.org/10.33093/jetap.2023.5.1.1.
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In this work, Monte Carlo simulation is performed for InP Gunn diode with a notch-d-doped structure. It is found that the presence of the d-doped layer has improved the Gunn diode performance significantly as compared to the conventional notch structure. The d-doped effect caused an increment in the fundamental operating frequency and current harmonic amplitude in InP Gunn diodes by modifying the electric field profile within the device. An InP notch-d-doped Gunn diode with device length of 800 nm under 3V DC bias is capable of producing AC current signal of 287 GHz, reaching the THz region, with its harmonic amplitude being 5.68×108 A/m2. It is observed that InP-based notch-d-doped Gunn diode is able to generate signals at a higher operating frequency with a larger output power as compared to that of GaAs due to the higher electron drift velocity and threshold field in InP material.
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RAZEGHI, MANIJEH. "GaN-BASED LASER DIODES." International Journal of High Speed Electronics and Systems 09, no. 04 (1998): 1007–80. http://dx.doi.org/10.1142/s0129156498000415.
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We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail to valence band transition is the necessary mechanism of lasing in GaN. This work showed that the thermal instability of InGaN at growth temperature is of main concern in the fabrication of InGaN-based MQW laser diode structures. Photoluminescence has shown that the InGaN composition is very sensitive to the growth temperature. Therefore InGaN growth temperature should be strictly controlled during InGaN-based MQW growth. This work discovered that proper annealing of Si-doping of InGaN/GaN MQW structures that are properly annealed could reduce the lasing threshold and improve the slope efficiency. Over-annealing of these MQWs can lead to thermal degradation of the active layer. Si-doping in over-annealed MQW structure further degrades its quality. The degradation has been attributed to the increase of defects and/or nonuniform local potential formation. P-type doping on the top of InGaN/GaN could also lead to the formation of compensation layer which also degrades laser diode performances. Optical confinement and carrier confinement in InGaN-based laser diode structures are evaluated for optimum laser diode design. The state-of-the-art and fundamental issues of InGaN-based light-emitting diodes and laser diodes are discussed.
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Kim, Junghun, and Kwangsoo Kim. "4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance." Energies 13, no. 18 (2020): 4602. http://dx.doi.org/10.3390/en13184602.
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In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations. The junction between P+ polysilicon and the N-drift layer forming a heterojunction diode on the side wall of the source trench region suppresses the operation of the PiN body diode during the reverse conduction state. Therefore, the injected minority carriers are completely suppressed, reducing the reverse recovery current by 73%, compared to the PiN body diodes. The switching characteristics of the proposed MOSFET using the heterojunction diode as a freewheeling diode was compared to the power module with a conventional MOSFET and an external diode as a freewheeling diode. It is shown that the switching performance of the proposed structure exhibits equivalent characteristics compared to the power module, enabling the elimination of an external freewheeling diode in the power system.
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Martínez-Angeles, Wendy Liliana, Orfil González-Reynoso, Gregorio Guadalupe Carbajal-Arizaga, and Mario Alberto García-Ramírez. "Electronic Barriers Behavioral Analysis of a Schottky Diode Structure Featuring Two-Dimensional MoS2." Electronics 13, no. 20 (2024): 4008. http://dx.doi.org/10.3390/electronics13204008.
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This research presents a comprehensive study of a Schottky diode fabricated using a gold wafer and a bilayer molybdenum disulfide (MoS2) film. Through detailed simulations, we investigated the electric field distribution, potential profile, carrier concentration, and current–voltage characteristics of the device. Our findings confirm the successful formation of a Schottky barrier at the Au/MoS2 interface, characterized by a distinct nonlinear I–V relationship. Comparative analysis revealed that the Au/MoS2 diode significantly outperforms a traditional W/Si structure in terms of rectification performance. The Au/MoS2 diode exhibited a current density of 1.84 × 10−9 A/cm2, substantially lower than the 3.62 × 10−5 A/cm2 in the W/Si diode. Furthermore, the simulated I–V curves of the Au/MoS2 diode closely resembled the ideal diode curve, with a Pearson correlation coefficient of approximately 0.9991, indicating an ideality factor near 1. A key factor contributing to the superior rectification performance of the Au/MoS2 diode is its higher Schottky barrier height of 0.9 eV compared to the 0.67 eV of W/Si. This increased barrier height is evident in the band diagram analysis, which further elucidates the underlying physics of Schottky barrier formation in the Au/MoS2 junction. This research provides insights into the electronic properties of Schottky contacts based on two-dimensional MoS2, particularly the relationship between electronic barriers, system dimensions, and current flow. The demonstration of high-ideality-factor Au/MoS2 diodes contributes to the design and optimization of future electronic and optoelectronic devices based on 2D materials. These findings have implications for advancements in semiconductor technology, potentially enabling the development of smaller, more efficient, and flexible devices.
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Lee, Sung-Hoon, and Ho-Young Cha. "Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode." Micromachines 14, no. 11 (2023): 2005. http://dx.doi.org/10.3390/mi14112005.
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In this study, we developed an analytic model to design a trench metal–insulator–semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN diode. The key parameters considered in the trench MIS FP structure include trench depth, MIS dielectric material and thickness, and interface charge density of MIS. The boundary conditions are defined based on the maximum allowed electric field strengths at the dielectric and semiconductor regions. The developed model was validated using TCAD simulations. As an example, a 1 kV GaN vertical PN diode was designed using the optimized FP structure, which exhibited the same breakdown voltage characteristics as an ideal one-dimensional PN diode structure without edge effects. This proposed simple analytic model offers a design guideline for the trench MIS FP for the edge termination of vertical PN diodes, enabling efficient design without the need for extensive TCAD simulations, thus saving significant time and effort.
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Bercha, Artem, Mikołaj Chlipała, Mateusz Hajdel, et al. "Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities." Nanomaterials 15, no. 2 (2025): 112. https://doi.org/10.3390/nano15020112.
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We compare the optical properties of four pin diode samples differing by built-in field direction and width of the In0.17Ga0.83N quantum well in the active layer: two diodes with standard nip layer sequences and 2.6 and 15 nm well widths and two diodes with inverted pin layer ordering (due to the tunnel junction grown before the pin structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected carriers. Out of the four types of diodes, the highest photocurrent efficiency was obtained (at reverse voltage) for the wide-well, inverted polarity diode. This diode also showed the highest PL intensity (at positive voltages) of our four samples. Diodes with wide wells have stable emission wavelengths (almost independent of bias and excitation power).
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Swoboda, T., K. Klinar, A. Kitanovski, and M. Muñoz Rojo. "Thermal diode based on a multilayer structure of phase change materials." Journal of Physics: Conference Series 2116, no. 1 (2021): 012115. http://dx.doi.org/10.1088/1742-6596/2116/1/012115.
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Abstract Thermal diodes are devices that allow heat to flow preferentially in one direction. This unique thermal management capability has attracted attention in various applications, like electronics, sensors, energy conversion or space applications, among others. Despite their interest, the development of efficient thermal diodes remains still a challenge. In this paper, we report a scalable and adjustable thermal diode based on a multilayer structure that consists of a combination of phase change and phase invariant materials. We applied a parametric sweep in order to find the optimum conditions to maximize the thermal rectification ratio. Our simulations predicted a maximum thermal rectification ratio of ~20%. To evaluate the impact of these devices in real applications, we theoretically analysed the performance of a magnetocaloric refrigerating device that integrates this thermal diode. The results showed a 0.18 K temperature span between the heat source and the heat sink at an operating frequency of 25 Hz.
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Ruder, Steven, Tom Earles, Christian Galstad, Michael Klaus, Don Olson, and Luke J. Mawst. "High-Power, High-Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices." Photonics 9, no. 7 (2022): 436. http://dx.doi.org/10.3390/photonics9070436.
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Three types of GaAsP metamorphic buffer layers, including linearly graded, step graded, and metamorphic superlattices, were compared for the purposes of virtual substrates for red laser diode heterostructures. Laser diodes were fabricated on GaAs substrates and relaxed GaAsP metamorphic superlattice virtual substrates. A laser diode structure with a tensile-strained quantum well on a standard miscut GaAs substrate achieved TM-polarized emission at a 638 nm wavelength with 45% peak power conversion efficiency (PCE) at a 880 mW continuous wave (CW) output power with T0 = 77 K and T1 = 266 K. An analogous laser diode structure with a compressively strained quantum well on the metamorphic superlattice emitted TE-polarized 639 nm light with 35.5% peak PCE at 880 mW CW with T0 = 90 K and T1 = 300 K.
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Zozulia, V., O. Botsula, and K. Prykhodko. "A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN." Radio physics and radio astronomy 29, no. 4 (2024): 317–26. https://doi.org/10.15407/rpra29.04.317.
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Subject and Purpose. The generation of millimeter-wave oscillations by a planar GaAs diode with active side boundary (ASB) is considered. The diode structure is placed on a semiconductor semi-insulating substrate and represents a GaAs channel approximately 1μm long. Its lateral surface carries a semiconductor element based on a graded-gap GaInAs layer electrically connected to the anode. The work seeks to assess the oscillation efficiency and the maximum output power of the diode oscillator loaded with a single-circuit resonator, determine the oscillation frequency cut-off, and estimate how the energy and frequency characteristics of the diode are influenced by the impact ionization and GaInAs spatial distribution in the graded-gap layer. Methods and Methodology. The carrier transport processes in the diode are simulated using a two-dimensional model, the particle ensemble Monte Carlo method, and the full geometric multigrid method to determine the electric fi eld distribution in the diode. Results. The characteristics of direct-current diodes have been obtained, along with frequency dependences of the oscillation efficiency and output power of based on them oscillators in a range of ASB parameters. The effect that the impact ionization and the GaInAs spatial distribution in the graded-gap layer exert on the maximum power of the alternating current at frequencies above 180 GHz has been analyzed. A possibility has been shown to generate alternating electric currents at frequencies up to 300 GHz, with the efficiency of the oscillators upon the examined ASB-diodes being two to three times higher than the efficiency of oscillators upon conventional GaAs-based planar diodes. Conclusions. It has been confirmed that ASB-diodes hold much promise for the alternating current generation at frequencies up to 300 GHz. The ASB application increases the output power of the device and extends the frequency range compared to the ordinary planar diode. Th e impact ionization in the graded-gap layer improves the diode characteristics but is not the decisive factor. The efficiency and the output power of the diode oscillator are most exerted by the ASB position relative to the diode electrodes. Diodes with the ASB located closer the cathode provide a larger oscillation power. The ASB position closer to the anode yields higher frequencies.
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Li, Zai Jin, Yi Qu, Te Li, et al. "The Characteristics of Facet Coatings on Diode Lasers." Advanced Materials Research 1089 (January 2015): 202–5. http://dx.doi.org/10.4028/www.scientific.net/amr.1089.202.
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The effect of the output power with different facet passivation methods on 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with Si passivation, and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method. The laser diode with the Si passivation film is failure when current is 5.1 A, the laser diode with the ZnSe passivation film is not failure until current is 5.6 A And we analyzed the failure reasons for each method. In conclusion, the method of coated ZnSe passivation on the laser diode facet can effectively increase the output power of semiconductor lasers.
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Wang, Heng, Gaurav Jayaswal, Geetanjali Deokar, et al. "CVD-Grown Monolayer Graphene-Based Geometric Diode for THz Rectennas." Nanomaterials 11, no. 8 (2021): 1986. http://dx.doi.org/10.3390/nano11081986.
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For THz rectennas, ultra-fast diodes are required. While the metal–insulator–metal (MIM) diode has been investigated in recent years, it suffers from large resistance and capacitance, as well as a low cut-off frequency. Alternatively, a geometric diode can be used, which is more suitable due to its planar structure. However, there is only one report of a THz geometric diode based on a monolayer graphene. It is based on exfoliated graphene, and thus, it is not suitable for mass production. In this work, we demonstrate chemical vapor deposition (CVD)-grown monolayer graphene based geometric diodes, which are mass-producible. The diode’s performance has been studied experimentally by varying the neck widths from 250–50 nm, the latter being the smallest reported neck width for a graphene geometric diode. It was observed that by decreasing the neck widths, the diode parameters such as asymmetry, nonlinearity, zero-bias resistance, and responsivity increased within the range studied. For the 50 nm neck width diode, the asymmetry ratio was 1.40 for an applied voltage ranging from −2 V to 2 V, and the zero-bias responsivity was 0.0628 A/W. The performance of the diode was also verified through particle-in-cell Monte Carlo simulations, which showed that the simulated current-voltage characteristics were consistent with our experimental results.
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Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.012.
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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.
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Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.18083.
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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.
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Zhang, Linyu, Xuan Li, Wei Luo та ін. "Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers". Photonics 10, № 11 (2023): 1287. http://dx.doi.org/10.3390/photonics10111287.
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The 1.55 μm waveband integrated external cavity tunable diode lasers have excellent merits such as their small volume, low cost, low power consumption, wide tuning range, narrow linewidth, large side mode suppression ratio, and high output power. These merits have attracted many applications for the lasers, such as in wavelength division multiplexing, passive optical networks, mobile backhaul, and spectral sensing technology. In this paper, firstly, the basic structure and principle of integrated external cavity tunable diode lasers are introduced, and then two main integrated structures of 1.55 μm waveband external cavity tunable diode lasers are reviewed and compared in detail, namely the hybrid integrated structure and monolithic integrated structure of 1.55 μm waveband integrated external cavity tunable diode lasers. Finally, the research progress in 1.55 μm waveband integrated external cavity tunable diode lasers in the last decade are summarised, and the advantages and disadvantages of 1.55 μm waveband integrated external cavity tunable diode lasers are analysed. The results show that, with the transformation of optical communication into more complex modulation formats, it is necessary to integrate miniature 1.55 μm waveband external cavity tunable diode lasers. Low-cost integrated 1.55 μm waveband external cavity tunable diode lasers are expected to be used in the next generation of optical transceivers in small-factor modules.
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Storozhenko, I., та S. Sanin. "TERAHERTZ OSCILLATIONS IN InN GUNN DIODES WITH AN ACTIVE REGION LENGTH OF 1 μm AND WITH A GRADED GaInN LAYER". RADIO PHYSICS AND RADIO ASTRONOMY 27, № 4 (2022): 289–98. http://dx.doi.org/10.15407/rpra27.04.289.
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Subject and Purpose. The InN Gunn diode is known as the device capable of generating powerful oscillations atfrequencies above 300 GHz. A possible way for increasing both the microwave power and the cutoff frequency of the Gunn diode is to employ graded-gap semiconductors. The subject of this research is the process for generating electrical oscillations in InN and graded-gap GaInN Gunn diodes that involve resistive contacts at the cathode and the anode, and possess a 1-μm long active region. The research is aimed at suggesting an optimized structure for the graded-gap GaInN diode to obtain a maximum microwave power and maximum frequency of the oscillations, while consuming the lowest possible amount of DC power. Methods and Methodology. А hydrodynamic simulation has been performed of transport of electrons in graded-gap semiconductors, and an integro-differential equation analyzed concerning voltage drop across elements of the related RLC circuit. Results.The power spectra of oscillations have been analyzed for a variety of parameters of both the Gunn diode and the RLC circuit. The frequency dependences of the oscillatory power, characteristic of different electron concentrations, provide evidence for the possibility of obtaining considerable microwave powers at frequencies above 300 GHz through the use of graded-gap GaInN diodes. Conclusion. The results that have been obtained clearly confirm the expected practicality of using a graded GaInN layer in the InN diode for increasing the power of microwave oscillations, reducing the necessary level of the DC power, and restraining the dependence of the output characteristics on the electron density. The highest power of oscillations has been demonstrated by the InN diode with a 0.1 µm long graded-gap layer of GaInN. Meanwhile, the oscillation frequency generated in that diode is somewhat lower than in the InN diode. A compromise between the values of generated power and the oscillation frequency has been reached in the diode with a graded-gap GaInN layer of 0.9 µm in length. In addition, the latter structure requires the lowest level of DC power for effectuating microwave generation at the higher feasible frequencies.
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Shackery, Iman, Atiye Pezeshki, Jae Young Park та ін. "Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor". Journal of Materials Chemistry C 6, № 40 (2018): 10714–22. http://dx.doi.org/10.1039/c8tc02635a.
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For the first time, we connect in series two α-MoTe<sub>2</sub>-based Schottky diodes (SDs) to form a back-to-back diode using the micromechanical exfoliation method. Such structure shows excellent performance toward chemical vapor sensing.
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M., K. Abdulhameed, Mohamad Isa M.S., Zakaria Z., and Mohsin M.K. "Controlling the Radiation Pattern of Patch Antenna Using Switchable EBG." TELKOMNIKA Telecommunication, Computing, Electronics and Control 16, no. 5 (2018): 2014–22. https://doi.org/10.12928/TELKOMNIKA.v16i5.10443.
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The advantages of the beam steering technique are the reduction of interference, save power and to maximize connectivity for point to multi points. Antenna gain degradation is a big problem in the beam steering technique. A new antenna structure is formed by combining the concept of mushroom-like EBG structure with the switching diode to produce the radation pattern control. All sides of the patch antenna are surrounded by several cells for EBG structure. In both of the the left and right sides, through a switching pin diode, the ground plane is attached to vias. The band-stop and band-pass properties of the EBG sector can be changed with the help of switching the diode between ON and OFF state, thus yielding the beam steering into that particular sector. At 6 GHz operational frequency, this structure has the ability to steer 40º (from -20º to +20º) while minimal diodes are utilized, directivity of 10 dBi, gain 9.86 dB and the efficiency is 96.5%. This approach is robust to gain degradation and the main lobe gain is approximately constant for all steering angles.
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Xu, Yili, and Xin Li. "Comparative Study of the Hexagonal Structure of the SiC JBS Source Region." Journal of Electronic Research and Application 9, no. 1 (2025): 61–66. https://doi.org/10.26689/jera.v9i1.9057.
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Silicon carbide (SiC) junction barrier Schottky (JBS) diode has been widely used in power electronic systems due to its excellent physical characteristics and electrical performance, and the structural design of its source area has a particularly significant impact on the performance. This study provides a comparative analysis of the SiC JBS diode performance of different hexagonal structures, aiming to provide theoretical support and practical guidance for the optimization of JBS diode performance. Through theoretical derivation, experimental verification and data processing, the paper deeply analyzes the influence of hexagonal structure on JBS diode current distribution and breakdown voltage, and proposes a targeted optimization strategy.
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Hino, Shiro, Hideyuki Hatta, Koji Sadamatsu, et al. "Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode." Materials Science Forum 897 (May 2017): 477–82. http://dx.doi.org/10.4028/www.scientific.net/msf.897.477.
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External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD should be kept smaller than the built-in potential of the body diode. Embedding SBD into MOSFET with short cycle length increases maximum source-drain voltage where body diode remains inactive, resulting in high current density of SBD current. We propose a MOSFET structure where an SBD is embedded into each unit cell and an additional doping is applied, which allows high current density in reverse operation without any activation of body diode. The proposed MOSFET was successfully fabricated and much higher reverse current density was demonstrated compared to the external SBD. We can expect to reduce total chip size of high voltage modules using the proposed MOSFET embedding SBD.
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Bliznyuk, Vladimir, Olga Koval, Vasiliy Parshin, Alexey Rzhanov, Alexander Tarasov, and Vladislav Grigoriev. "Spectral-spatial structure of the high-power laser diodes radiation during their operation." EPJ Web of Conferences 220 (2019): 02016. http://dx.doi.org/10.1051/epjconf/201922002016.
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The emission spectra of high-power laser diodes in the process of exploitation at different pump currents and the relationship of these spectra with the spatial structure of the field are considered. The field in laser diodes with a wide contact splits into several independent channels corresponding to the components of the radiation frequency spectrum. It is established that the number of channels and the corresponding number of spectral components of laser diode radiation increases during operation.
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Anutgan, Mustafa, Tamila Anutgan, and Ismail Atilgan. "SEM, EDX spectroscopy and real-time optical microscopy of electroformed silicon nitride-based light emitting memory device." European Physical Journal Applied Physics 89, no. 1 (2020): 10303. http://dx.doi.org/10.1051/epjap/2020190300.
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An ordinary amorphous silicon nitride-based p-i-n diode was electroformed under optimized process conditions, which led to its instant transformation to a semiconductor device with two-in-one properties: a bright visible light emitting diode and a resistive memory switching device; i.e. light emitting memory (LEM). In the present work, for a thorough understanding of the changes that occur during electroforming, SEM images and EDX analyses were performed on both top-view and cross-section of both as-deposited and electroformed diodes. It was seen from the top-view images that while the diode surface of the as-deposited diode had a smooth and homogeneous ITO top electrode, the electroformed diode exhibited a rough ITO surface. EDX analyses showed that ITO was completely removed from many point-like regions on the diode surface. Cross-sectional SEM images showed no clue of any material diffusion through the diode structure during electroforming, which was one of the suspected situations about our model. EDX results also showed no considerable increase of any of the ingredients of the ITO alloy (In, Sn or O) across the semiconductor (p-i-n) layers of the electroformed diode. In contrast to the roughened surface of the electroformed diode, the silicon-based layers of the diode below the ITO electrode seemed to be well-preserved. Real-time optical microscopy showed that the light is emitted through the regions of the diode surface where the residual ITO top electrode is present.
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Mutlu, Adem, Cem Tozlu, and Mustafa Can. "The Role of Self-Assembly Monolayers (SAM) on Schottky Diode Performance." Düzce Üniversitesi Bilim ve Teknoloji Dergisi 13, no. 1 (2025): 357–71. https://doi.org/10.29130/dubited.1530876.
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This study investigates the electrical and charge transport properties of Schottky diodes with a p-Si/TiO2/SAM/Al structure, incorporating the self-assembly monolayers (SAMs) 4", 4""-[biphenyl-4,4" diylbis(phenylimino)]dibiphenyl-4-carboxylic acid (MZ187) onto a titanium dioxide (TiO2) layer synthesized via the sol-gel method. The impact of the MZ187 molecule on diode performance was evaluated based on parameters such as the barrier height (∅b), ideality factor (n), and series resistance (Rs). Experimental results reveal that the MZ187 monolayers on TiO2 substantially enhanced diode performance, reducing the n from 3.7 for the control diode to 2.7 for the MZ187-modified diode. The Rs was also significantly reduced, while the ∅b increased. The rectification ratio increased from 1.3x102 for the control diode to 2.2x103 for the MZ187 modified diode. These improvements are attributed to the ability of MZ187 molecules to minimize interface states (Nss) and improve surface quality. These findings underscore the critical role of SAMs in optimizing Schottky diode performance and demonstrate how the MZ187 molecule enhances diode efficiency by altering interface properties. The effectiveness of SAM coatings in enhancing Schottky diode performance makes a significant contribution to the field of nanoelectronics. This research paves the way for future studies on the use of SAMs in various nano electronic applications and offers promising potential for improving the performance and reliability of these technologies.
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Dostálová, T., J. Kratochvíl, H. Jelínková, A. Nocar, and L. Vavříčková. "Blue (0.44 µm) and red (1.7 µm) diode laser activated bleaching—dental shade changes determination." Laser Physics Letters 20, no. 3 (2023): 035601. http://dx.doi.org/10.1088/1612-202x/acb3c9.
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Abstract Tooth whitening or bleaching is one of the most common dental procedures that optimize the white color of the teeth and minimize the simultaneous damage to the tooth structure. Light can speed up the whitening process with halogen lamps, light-emitting diodes, plasma arc lamps, and lasers. Our results show that combinations of a teeth whitening agent with laser light irradiation with a 0.44 µm blue laser diode or a 1.7 µm near-IR laser diode accelerate the whitening process not only during tooth irradiation but also within two weeks after the procedure.
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Parisini, A., P. Mazzolini, O. Bierwagen та ін. "Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry". Journal of Vacuum Science & Technology A 40, № 4 (2022): 042701. http://dx.doi.org/10.1116/6.0001857.
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SnO/[Formula: see text]-Ga2O3 vertical p–n diodes with planar geometry have been fabricated on c-plane Al2O3 and investigated by current–voltage measurements. The effects of the in-plane conduction through the Si-doped [Formula: see text]-Ga2O3 layer on the diode performance and their relevance have been evaluated. A significant series resistance is observed, which shows typical features of the variable range hopping transport observed in Si-doped [Formula: see text]-Ga2O3; this in-plane transport mechanism is probably induced by the columnar domain structure of this polymorph. The dependence of the series resistance on the geometry of the diode supports the interpretation. A simple equivalent model is presented to describe the experimental behavior of the diode, supported by preliminary impedance spectroscopy investigation.
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Kim, Yoonsok, Taeyoung Kim, and Eun Kyu Kim. "Photoelectric Characteristics of a Large-Area n-MoS2/p-Si Heterojunction Structure Formed through Sulfurization Process." Sensors 20, no. 24 (2020): 7340. http://dx.doi.org/10.3390/s20247340.
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Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties. However, not much of the 2D materials research completed to date has covered large-area structures comprised of high-quality heterojunction diodes. We fabricated a large-area n-MoS2/p-Si heterojunction structure by sulfurization of MoOx film, which is thermally evaporated on p-type silicon substrate. The n-MoS2/p-Si structure possessed excellent diode characteristics such as ideality factor of 1.53 and rectification ratio in excess of 104. Photoresponsivity and detectivity of the diode showed up to 475 mA/W and 6.5 × 1011 Jones, respectively, in wavelength ranges from visible to near-infrared. The device appeared also the maximum external quantum efficiency of 72%. The rise and decay times of optical transient response were measured about 19.78 ms and 0.99 ms, respectively. These results suggest that the sulfurization process for large-area 2D heterojunction with MoS2 can be applicable to next-generation electronic and optoelectronic devices.
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Draghici, Mihai, Roland Rupp, Rolf Gerlach, and Bernd Zippelius. "A New 1200V SiC MPS Diode with Improved Performance and Ruggedness." Materials Science Forum 821-823 (June 2015): 608–11. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.608.
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Infineon’s 5th Generation of 1200V SiC diodes uses a new compact chip design, realized by an optimized hexagonal merged-pn cell structure in the active area. This allows a higher n-doping in the epi layer due to improved E-field shielding resulting in a smaller differential resistance per chip area. Thanks to the merged-pn cell structure, depending on the diode ampere rating, a surge current capability now rated up to 14 times the nominal current ensures robust diode operation during surge current events in the application. The previous generations of 1200V SiC diodes could not make full use of the high breakdown field strength of the SiC material due to the instable avalanche which occurs at the edge termination only, and therefore, requiring a significant safety margin between rated voltage and breakdown voltage. Now the 5th Generation is designed in a way that each cell contributes to the avalanche, enabling a much more avalanche rugged device.
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Gao, Rongyu, Hongyu Cheng, Wenmao Li, et al. "A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars." Crystals 12, no. 7 (2022): 916. http://dx.doi.org/10.3390/cryst12070916.
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In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance. However, SJ MOSFET will turn on the parasitic diodes due to fast reverse recovery, further inducing severe oscillation in the reverse recovery of the device and the corresponding adverse effect on the circuit. In this study, a fast recovery vertical superjunction (SJ) MOSFET with n-Si and p-3C-SiC pillars was studied. Unlike other structures, such as the 4H-SiC superjunction UMOSFET with a heterojunction diode or the ultra-low recovery charge cell-distributed Schottky contacts SJ-MOSFET with integrated isolated NMOS, we introduce a Schottky barrier diode (SBD) on the source contact at the top of the n-Si pillar in the SJ-MOSFET to improve the device reverse recovery. The simulation software TCAD Silvaco was utilized to simulate the device properties. Compared with the conventional Si SJ, the proposed Si/SiC SJ with the Schottky barrier diode (SBD) connected demonstrated a lower reverse recovery charge, which was reduced by 90.5%, respectively. The waveform of the reverse recovery current demonstrates that the electrons in the device are withdrawn from SBD during reverse recovery, preventing the opening of the parasitic diode in the SJ MOSFET. Finally, another structure is illustrated to decrease the gate capacitance by introducing a thin p-base layer between the gate metal and N-Si pillar so that it can improve the switching characteristics of devices. The open-loss and off-loss of the improved device were reduced by 33% and 42.3%, respectively.
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Shmagin, V. B., K. E. Kudryavtsev, A. V. Novikov, D. V. Shengurov, D. V. Yurasov, and Z. F. Krasilnik. "Hodographs in diode-structure diagnostics." Semiconductors 49, no. 11 (2015): 1443–47. http://dx.doi.org/10.1134/s1063782615110196.
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Sang, Ling, Li Xin Tian, Fei Yang, et al. "Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes." Materials Science Forum 1014 (November 2020): 120–25. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.120.
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Designed for 6500V 4H-SiC JBS diodes, a highly-efficient termination structure of a non-uniform multiple floating field limiting rings (MFFLR) featuring with a non-uniform ring spacing and a multiple region division is studied and purposed. For each region, ring spacing is modulated independently by a multiplication factor and a linear increment factor. The non-uniform MFFLR structure is simulated and optimized for a better electric field distribution and a higher breakdown voltage. Based on the simulation results, 4H-SiC JBS diodes with the optimized non-uniform termination designs are fabricated. Experimental results show that the SiC JBS diode with optimized non-uniform MFFLR termination structure can achieve a breakdown voltage of up to 7800 V, and its termination efficiency is about 94% of an ideal parallel-plane junction’s. Our results demonstrate that the optimized non-uniform MFFLR termination structure is capable for SiC JBS diodes with breakdown voltage of 6500V and above. Our results can provide a valuable design methodology of edge termination structures for other high-voltage SiC devices.
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Chu, Shucheng, and Hirofumi Kan. "Efficient Silicon Light-Emitting-Diodes with a p-Si/Ultrathin SiO2/n-Si Structure." International Journal of Optics 2011 (2011): 1–4. http://dx.doi.org/10.1155/2011/364594.
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We report the efficient enhancement of light emission from silicon crystal by covering the silicon surface with an ultrathin (several nm) SiO2layer. The photoluminescence of Si band edge emission (1.14 μm band) at room temperature is enhanced by two orders of magnitude. Compared with a p-Si/n-Si diode, light emission from a p-Si/SiO2/n-Si diode by current injection via direct tunneling is enhanced by more than 3 orders of magnitude. The light-emission enhancement is attributed to the diminishment of nonradiation recombination at the surface/interface and to the space confinement of the carrier recombination. The simple structure and low operating bias (approximately 1 volt) of our light emitting diodes supply a new choice for realizing efficient current injection light source in silicon compatible with conventional ULSI technology.
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Yamamoto, Takeo, Jun Kojima, Takeshi Endo, Eiichi Okuno, Toshio Sakakibara, and Shoichi Onda. "1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current." Materials Science Forum 600-603 (September 2008): 939–42. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.939.
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4H-SiC SBDs have been developed by many researchers and commercialized for power application devices in recent years. At present time, the issues of an SiC-SBD are lower on-state current and a relatively larger-leakage current at the reverse bias than Si-PN diodes. A JBS (Junction Barrier Schottky) diode was proposed as a structure to realize a lower leakage current. We simulated the electrical characteristics of JBS diodes, where the Schottky electrode was made of molybdenum in order to optimize its performance. We fabricated JBS diodes based on the simulation with a diameter of 3.9mm (11.9 mm2). The JBS diode has a lower threshold voltage of 0.45 V, a large forward current of 40 A at Vf = 2.5V and a high breakdown voltage of 1660 V. Furthermore, the leakage current at 1200 V was remarkably low (Ir = 20 nA).
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Torkhov, Nikolay, Valeriy Vertegel, Mikhail Tkachenko, and Aleksandr Manko. "Optimization of the Planar Schottky Diode Structure in THz Range." Infocommunications and Radio Technologies 6, no. 2 (2023): 194–200. http://dx.doi.org/10.29039/2587-9936.2023.06.2.16.
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Optimization of the structure of a planar Schottky diode with a whisker and an air anode lead allowed to obtain 198 GHz bandwidth (fractional bandwidth of 16.5 %) at a central frequency of ~1200 GHz and reduce insertion losses of 3.4 dB at a noise temperature of ~3300 K.
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Zhang, Yong, Chengkai Wu, Xiaoyu Liu, et al. "The Development of Frequency Multipliers for Terahertz Remote Sensing System." Remote Sensing 14, no. 10 (2022): 2486. http://dx.doi.org/10.3390/rs14102486.
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This paper summarizes the development of novel Schottky-diode-based terahertz frequency multipliers. The basic structure and manufacturing process of planar Schottky barrier diodes (SBDs) are reviewed, along with other diode structures that have been proposed in the literature. A numerical modeling method for the novel diodes in the context of terahertz frequency multipliers is presented, which includes 3D electromagnetic (EM) modeling, electro-thermal modeling and modeling of physical non-ideal effects. Furthermore, a general design methodology for developing terahertz frequency multipliers is introduced, involving a sub-division design method (SDM), a global design method (GDM) and a half-sub-division and half-global design method (HS-HGDM). These methods are summarized and compared for 110 GHz and 220 GHz frequency multipliers in the context of communication and imaging applications. Laboratory measurements of these multipliers show good agreement with numerical simulations. Finally, several classic terahertz remote sensing systems are reviewed, and a 220 GHz remote sensing system established using novel frequency multipliers for security inspection purposes is presented along with associated imaging results.
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Lee, Hyung-Joo, Jin-Young Park, Lee-Ku Kwac, and Jongsu Lee. "Improved Optical Efficiency of 850-nm Infrared Light-Emitting Diode with Reflective Transparent Structure." Micromachines 14, no. 8 (2023): 1586. http://dx.doi.org/10.3390/mi14081586.
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This study investigated a reflective transparent structure to improve the optical efficiency of 850 nm infrared light-emitting diodes (IR-LEDs), by effectively enhancing the number of extracted photons emitted from the active region. The reflective transparent structure was fabricated by combining transparent epitaxial and reflective bonding structures. The transparent epitaxial structure was grown by the liquid-phase epitaxy method, which efficiently extracted photons emitted from the active area in IR-LEDs, both in the vertical and horizontal directions. Furthermore, a reflective bonding structure was fabricated using an omnidirectional reflector and a eutectic metal, which efficiently reflected the photons emitted downwards from the active area in an upward direction. To evaluate reflective transparent IR-LED efficiency, a conventional absorbing substrate infrared light-emitting diode (AS IR-LED) and a transparent substrate infrared light-emitting diode (TS IR-LED) were fabricated, and their characteristics were analyzed. Based on the power–current (L-I) evaluation results, the output power (212 mW) of the 850 nm IR-LED with the reflective transparent structure increased by 76% and 26%, relative to those of the AS IR-LED (121 mW) and TS IR-LED (169 mW), respectively. Furthermore, the reflective transparent structure possesses both transparent and reflective properties, as confirmed by photometric and radial theta measurements. Therefore, light photons emitted from the active area of the 850 nm IR-LED were efficiently extracted upward and sideways, because of the reflective transparent structure.
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Schemerov, I. V., A. Ya Polyakov, P. B. Lagov, et al. "The effect of trapping sites introduced by 1 MeV proton irradiation on the reverse current recovery time in Ga2O3-based Schottky diodes." Industrial laboratory. Diagnostics of materials 89, no. 7 (2023): 25–33. http://dx.doi.org/10.26896/1028-6861-2023-89-7-25-33.
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The reverse current recovery time is an important parameter of diodes, fast rectifiers and transistors which determined their high-frequency properties and area of application. Defects in the structure may sufficiency reduce the cutoff frequency and lead to overheating. The reverse recovery of the low currents in the α- and β-Ga2O3 Schottky diodes was measured and analyzed in this study. The reverse recovery time in the β-Ga2O3-based Schottky diode is limited mainly by the relaxation of the RC-circuit formed by the equivalent diode circuit and can be very low (20 nsec in this case). Irradiation can introduce some defects in the structure, which may act as deep levels and prolong the relaxation. We have demonstrated experimentally that increasing serial resistance of the circuit lead to an increase in the reverse recovery time. But we can point an additional part of relaxation that can be attributed to the emission from deep levels in the forbidden gap of the semiconductor. It is shown that prolongation increases with the reverse recovery time but saturates. In the α-Ga2O3-based structures the reverse recovery time measured after proton irradiation was 6 μsec, twice as high than it can be expected from RC-circuit relaxation time. These deep levels can be associated with interstitial oxygen atoms. The results obtained can be used to improve the technology of crystal growth to produce Schottky diodes with a high boundary frequency.
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Graffeuil, J., L. Bary, J. Rayssac, J. G. Tartarin, and L. Lopez. "Assessing Zener-Diode-Structure Reliability From Zener Diodes' Low-Frequency Noise." IEEE Transactions on Device and Materials Reliability 7, no. 3 (2007): 468–72. http://dx.doi.org/10.1109/tdmr.2007.907407.
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Cai, Guangshuo, Caoyuan Mu, Jiaosheng Li, et al. "Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation." Micromachines 14, no. 9 (2023): 1667. http://dx.doi.org/10.3390/mi14091667.
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In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows weak influences on the forward characteristics and helps to suppress the electric field crowding. However, the breakdown voltage of the diode with simple step edge termination is still lower than that of the ideal parallel-plane one. To further enhance the breakdown voltage, we combine a p-n junction-based junction termination extension on the step edge termination. After optimizing the structure parameters of the device, the depletion regions formed by the junction termination extension overlap with that of the p-n junction on the top mesa, resulting in a more uniform electric field distribution and higher device performance.
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Shen, Zhihua, Qiaoning Li, Xiao Wang, Jinshou Tian, and Shengli Wu. "Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation." Micromachines 12, no. 7 (2021): 729. http://dx.doi.org/10.3390/mi12070729.
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Vacuum diodes, based on field emission mechanisms, demonstrate a superior performance in high-temperature operations compared to solid-state devices. However, when considering low operating voltage and continuous miniaturization, the cathode is usually made into a tip structure and the gap between cathode and anode is reduced to a nanoscale. This greatly increases the difficulty of preparation and makes it difficult to ensure fabrication consistency. Here, a metal-insulator-semiconductor (MIS) structural nanoscale vacuum diode, based on thermionic emission, was numerically studied. The results indicate that this device can operate at a stable level in a wide range of temperatures, at around 600 degrees Kelvin above 260 K at 0.2 V voltage bias. Moreover, unlike the conventional vacuum diodes working in field emission regime where the emission current is extremely sensitive to the gap-width between the cathode and the anode, the emission current of the proposed diode shows a weak correlation to the gap-width. These features make this diode a promising alternative to vacuum electronics for large-scale production and harsh environmental applications.
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Danilenko, Alexander A., Anton V. Strygin, Nikolay I. Mikhailov, et al. "PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD." Journal of the Russian Universities. Radioelectronics, no. 5 (December 6, 2018): 51–59. http://dx.doi.org/10.32603/1993-8985-2018-21-5-51-59.
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The article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered. The addition of electrodes to the surface of the i-region makes it possible to regulate the concentration of electrons and holes within the larger limits in compare with the single-gate structure creating enriched and depleted are-as in the structure. Programming is carried out by applying the appropriate voltage to the control electrodes of the floating gates. It is shown that the charge generated on the floating gate changes characteristics of the i-region of the pin diode.The key elements of complex simulation of the two-gate pin diode are simulation of charge accumulation mechanism on the floating gate, simulation of pin-diode opening time and calibration of numerical model. Simulation is performed in Synopsys Sentaurus TCAD. Physical models describing traps and their parameters, particle tunneling, transport phenomena in dielectrics and amorphous films are used in simulation. As a result of modeling, the opening time dependences on size, floating gate location and floating gate charge magnitude are obtained.It is shown that the pin-diode 2-gate structures allow to change the opening time in a wider range than the single-gate ones. To program a large range of pin-diode opening times, it is 2 gate structure that is advisable to use. The obtained results indicate that it is possible to implement a two-bit programming pin-diode and expand its functionality.
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ALAHYARIZADEH, GH, M. AMIRHOSEINY, and Z. HASSAN. "INFLUENCE OF WAVEGUIDE LAYERS ON DEEP VIOLET InGaN DQW LASERS PERFORMANCE." Surface Review and Letters 22, no. 04 (2015): 1550051. http://dx.doi.org/10.1142/s0218625x15500511.
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This paper focuses on the performance characteristics of laser diodes (LDs) to improve output light emission properties. The optical and electrical properties such as threshold current, output power, slope efficiency, differential quantum efficiency, optical intensity and optical confinement factor has been compared for diode lasers with different waveguide structures. The waveguide structures which were analyzed in this research were a basic GaN waveguide structure, an InGaN waveguide structure, and AlInGaN waveguide structure. In addition the effects of Indium concentration and the thickness of the top and down waveguide layers have been studied. The InGaN waveguide layer, which has a higher concentration of Indium, appears to increase the OCF. The increased thickness of the GaN layer improves light emission. However, laser performance deteriorates with increasing thickness of waveguide layers more than 100 nm. Over all, LD with AlInGaN waveguide structure has highest OCF, slope efficiency and DQE.
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Aya Baquero, H. "Didactic model of the diode with Finite Element Method." Journal of Physics: Conference Series 2307, no. 1 (2022): 012031. http://dx.doi.org/10.1088/1742-6596/2307/1/012031.
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Abstract The union of two extrinsic semiconductors, one of them doped with donor impurities and the other with acceptor impurities, constitutes what is called the diode. In this paper we present a didactic model of diode, from which its electrical characteristics can be extracted, such as the structure of energy bands, the characteristic curve of current voltage, etc. To achieve this purpose the Finite Element Method (FEM) was used. In essence, the MEF is a method that allows numerically approximate the solution of partial differential equations. It is well known that, except in very particular cases, obtain analytical solutions of such equations is impossible, and the only possibility is to find approximate solutions. This model is implemented in the search for new strategies and methods of teaching concepts related to electronic devices, such as diodes, transistors, light-emitting diodes, quantum devices, etc.
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Honarfar, Omid, and Abbas Ketabi. "A High-Efficiency Integrated Converter for LED Driver." Jordan Journal of Electrical Engineering 10, no. 1 (2024): 149. http://dx.doi.org/10.5455/jjee.204-1671392081.
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Enhancing the efficiency in the light-emitting-diode (LED) drivers is a noteworthy issue as it not only helps saving energy but also causes the long life span of the drivers. In this paper, a new LED driver with improved efficiency is proposed. Efficiency improvement is achieved without using any active or passive component to perform soft switching conditions. In the proposed driver, buck and buck-boost converters are integrated. The freewheeling diodes and inductors - of the two converters - are replaced by one diode and one inductor. So, the proposed driver constitutes a single-stage driver with a simple structure that uses only one controlled switch, one freewheeling diode, and one inductor. Besides its simple structure, the driver works with a constant frequency, which leads to using a simple controller. Efficiency improvement is obtained by changing the inductor size and LEDs arrangement rather than using the active clamp or snubber circuits. To decrease the switching losses in the proposed driver, the average of the input current is kept constant while the peak of the pulsating input current - which passes from the switch and freewheeling diode - is decreased. Moreover, power losses of the semiconductor components in the proposed driver are investigated, and consequently decreased, leading to improvement in the system's overall efficiency. Finally, a 10 W experimental driver is built and tested. The experimental results are consistent with theoretical analysis.