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Journal articles on the topic 'Dopant diffusion'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Bracht, Hartmut, S. Brotzmann, and Alexander Chroneos. "Impact of Carbon on the Diffusion of Donor Atoms in Germanium." Defect and Diffusion Forum 289-292 (April 2009): 689–96. http://dx.doi.org/10.4028/www.scientific.net/ddf.289-292.689.

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We report experiments on the diffusion of n-type dopants in isotopically controlled Ge multilayer structures doped with carbon. The diffusion profiles reveal a strong aggregation of the dopants within the carbon-doped layers and a retarded penetration depth compared to dopant diffusion in high purity natural Ge. Dopant aggregation and diffusion retardation is strongest for Sb and similar for P and As. Successful modeling of the simultaneous self- and dopant diffusion is performed on the basis of the vacancy mechanism and additional reactions that take into account the formation of carbon-vacan

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2

Khina, Boris B. "Extended 'Five-Stream' Model for Diffusion of Implanted Dopants in Silicon during Ultra-Shallow Junction Formation in VLSI Circuits." Defect and Diffusion Forum 277 (April 2008): 107–12. http://dx.doi.org/10.4028/www.scientific.net/ddf.277.107.

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Ion implantation of different dopants (donors and acceptors) into crystalline silicon with subsequent thermal annealing is used for the formation of ultra-shallow p-n junctions in VLSI technology. The experimentally observed phenomenon of transient enhanced diffusion (TED) during annealing hinders further downscaling of advanced VLSI circuits. However, modern mathematical models of dopant diffusion, which are based on the so-called “five-stream” approach, and software packages such as SUPREM4 encounter difficulties in describing TED. In this work, an extended five-stream model for diffusion in

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3

Drabczyk, Kazimierz, Edyta Wróbel, Grazyna Kulesza-Matlak, Wojciech Filipowski, Krzysztof Waczynski, and Marek Lipinski. "Comparison of diffused layer prepared using liquid dopant solutions and pastes for solar cell with screen printed electrodes." Microelectronics International 33, no. 3 (2016): 167–71. http://dx.doi.org/10.1108/mi-03-2016-0031.

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Purpose The purpose of this study is comparison of the diffusion processes performed using the commercial available dopant paste made by Filmtronics and the original prepared liquid dopant solution. To decrease prices of industrially produced silicon-based solar cells, the new low-cost production processes are necessary. The main components of most popular silicon solar cells are with diffused emitter layer, passivation, anti-reflective layers and metal electrodes. This type of cells is prepared usually using phosphorus oxychloride diffusion source and metal pastes for screen printing. The dif

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4

Watanabe, Go, Akane Yamazaki, and Jun Yoshida. "The Missing Relationship between the Miscibility of Chiral Dopants and the Microscopic Dynamics of Solvent Liquid Crystals: A Molecular Dynamics Study." Symmetry 15, no. 5 (2023): 1092. http://dx.doi.org/10.3390/sym15051092.

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Nematic liquid crystals (LCs) are known to undergo a phase transition to chiral nematic LCs possessing helices upon doping with enantiomeric molecules known as chiral dopants. The relationship between the helical pitch (p), the molar fraction (x), and the power of the chiral dopant to induce a helix in a nematic solvent (βM) is expressed as p=1/(x·βM). The helical pitch is easily controlled by the concentration of the chiral dopant when the dopant molecule is miscible with the host nematic LC. However, it has not yet been clarified what the miscibility of the chiral dopant molecules with the n

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5

Pennycook, S. J., R. J. Culbertson, and J. Narayan. "Formation of stable dopant interstitials during ion implantation of silicon." Journal of Materials Research 1, no. 3 (1986): 476–92. http://dx.doi.org/10.1557/jmr.1986.0476.

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High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transientenhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second

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6

Pawlik, Grzegorz, and Antoni C. Mitus. "Anomalous Diffusion and Decay of Clusters of Dopants in Lanthanide-Doped Nanocrystals." Materials 18, no. 4 (2025): 815. https://doi.org/10.3390/ma18040815.

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Upconversion (UC) luminescence in doped lanthanide nanocrystals is associated with the energy migration (EM) process within clusters of dopant ions. The process of the synthesis of core–shell nanocrystals occurs at elevated temperatures, promoting the diffusion of the dopants into the shell accompanied by the decay of dopant clusters. The details of this unwanted effect are poorly understood. In this paper, we theoretically study a model of the diffusion of dopant ions in a nanocrystal using Monte Carlo (MC) simulations. We characterize the diffusion, spatial neighboring relations and clusteri

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7

PANKRATOV, E. L. "INFLUENCE OF MECHANICAL STRESS IN A MULTILAYER STRUCTURE ON SPATIAL DISTRIBUTION OF DOPANTS IN IMPLANTED-JUNCTION AND DIFFUSION-JUNCTION RECTIFIERS." Modern Physics Letters B 24, no. 09 (2010): 867–95. http://dx.doi.org/10.1142/s0217984910022925.

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The influence of mechanical stress in a multilayer structure on spatial distribution of dopants in implanted-junction and diffusion-junction rectifiers, which was produced in the structure has been analyzed. It is shown that the stress leads to additional reduction of spatial dimensions of the p–n junction in comparison with the reduction — a result of inhomogeneity — of the diffusion coefficient of dopant and other parameters of dopant redistribution (see, for example, Refs. 1–3).

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8

Pankratov, Evgeny L., and Elena A. Bulaeva. "Optimization of spatial dependence of diffusion coefficient for acceleration of dopant diffusion." Multidiscipline Modeling in Materials and Structures 12, no. 4 (2016): 672–77. http://dx.doi.org/10.1108/mmms-06-2016-0026.

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Purpose It has been recently shown that diffusion of dopant during doping of inhomogeneous structure could be accelerated or decelerated in comparison with diffusion of dopant in structure with averaged diffusion coefficient. As a continuation of previous work, the purpose of this paper is to introduce an approach of estimating the limited value of acceleration of the dopant diffusion by choosing the dependence of the dopant diffusion coefficient on the coordinates. Design/methodology/approach The authors analyzed relaxation of concentration of dopant during diffusion in inhomogeneous material

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9

Sueoka, Koji, Ken Kamimura, and Seiji Shiba. "Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms." Advances in Materials Science and Engineering 2009 (2009): 1–3. http://dx.doi.org/10.1155/2009/309209.

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The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy. The dopant atoms considered include p-type dopants (B), n-type dopants (P, As, Sb), or light elements (C, O). It was found that (1) the diffusion barrier of impurity atoms decreases with an increase in their atomic number up to Ni, (2) B atom becomes an efficient gettering center for metals except for Ni, (3) most of the metals except for Fe and Co cann

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10

An, Dao Khac. "Important Features of Anomalous Single-Dopant Diffusion and Simultaneous Diffusion of Multi-Dopants and Point Defects in Semiconductors." Defect and Diffusion Forum 268 (November 2007): 15–36. http://dx.doi.org/10.4028/www.scientific.net/ddf.268.15.

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This paper summarizes some of the main results obtained concerning aspects of anomalous single-dopant diffusion and the simultaneous diffusion of multi-diffusion species in semiconductors. Some important explanations of theoretical/practical aspects have been investigated, such as anomalous phenomena, general diffusivity expressions, general non-linear diffusion equations, modified Arrhenius equations and lowered activation energy have been offered in the case of the anomalous fast diffusion for single-dopant diffusion process. Indeed, a single diffusion process is always a complex system invo

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11

Kim, Jongseob, and Ki-Ha Hong. "Retarded dopant diffusion by moderated dopant–dopant interactions in Si nanowires." Physical Chemistry Chemical Physics 17, no. 3 (2015): 1575–79. http://dx.doi.org/10.1039/c4cp04513k.

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12

Tian, Tang Yi, and Khatijah Aisha Yaacob. "Investigation of Phosphorus Spin on Dopant on SOI Wafer." Applied Mechanics and Materials 918 (January 9, 2024): 75–81. http://dx.doi.org/10.4028/p-3siuhr.

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Silicon on insulator (SOI) wafer has allowed the integrated circuit (IC) industry to create superior, high-performance solutions. In addition, doping techniques are vital in the silicon sector due to the need to regulate the material electrical properties. The spin on dopant (SOD) approach is an alternative method that involves spinning a solution containing dopant onto SOI wafers. This research aims to determine the impact of thermal diffusion temperature and soaking time on sheet resistance of doped SOI wafer using SOD approach. Additionally, the homogeneity of doping was studied by utilizin

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13

Cowern, Nicholas, and Conor Rafferty. "Enhanced Diffusion in Silicon Processing." MRS Bulletin 25, no. 6 (2000): 39–44. http://dx.doi.org/10.1557/mrs2000.97.

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Semiconductor-grade silicon is one of the most perfect crystalline materials that can be fabricated. It contains less than 1 ppb of unintended impurities and negligible twins or dislocations. Dopants can diffuse in this near-ideal crystal only by interacting with atomic-scale point defects: interstitial atoms or vacancies. These defects migrate through the silicon lattice, occasionally binding with a dopant atom and displacing it by one or more lattice positions.

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14

Kuganathan, Navaratnarajah, Sashikesh Ganeshalingam, and Alexander Chroneos. "Defects, Diffusion, and Dopants in Li2Ti6O13: Atomistic Simulation Study." Materials 12, no. 18 (2019): 2851. http://dx.doi.org/10.3390/ma12182851.

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In this study, force field-based simulations are employed to examine the defects in Li-ion diffusion pathways together with activation energies and a solution of dopants in Li2Ti6O13. The lowest defect energy process is found to be the Li Frenkel (0.66 eV/defect), inferring that this defect process is most likely to occur. This study further identifies that cation exchange (Li–Ti) disorder is the second lowest defect energy process. Long-range diffusion of Li-ion is observed in the bc-plane with activation energy of 0.25 eV, inferring that Li ions move fast in this material. The most promising

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15

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associat

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16

An, Dao Khac, Phan Ahn Tuan, Vu Ba Dung, and Nguyen Van Truong. "On the Atomistic Dynamic Modelling of Simultaneous Diffusion of Dopant and Point Defect (B, V, I) in Silicon Material." Defect and Diffusion Forum 258-260 (October 2006): 32–38. http://dx.doi.org/10.4028/www.scientific.net/ddf.258-260.32.

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Understanding the atomic movements of simultanous diffusion of dopant (B) and point defects (V, I) in silicon is of great importance for both experimental and theoretical diffusion studies. This paper presents the atomistic dynamic diffusion modelling of boron (B), self-interstitial (I) and vacancy (V) process in silicon based on simultaneous diffusion of boron dopant and point defects based on a previous developed theory. The simulation is based on the random walk theory with three main diffusion mechanisms: namely vacancy, interstitial and interstitialcy mechanism. The migration frequencies

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17

Pankratov, Evgeniy. "Relaxation time of dopant concentration in inhomogeneous medium with time-varying diffusion coefficient." Izvestiya VUZ. Applied Nonlinear Dynamics 12, no. 3 (2004): 35–44. http://dx.doi.org/10.18500/0869-6632-2004-12-3-35-44.

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In this paper the dynamics of dopant diffusion in an inhomogeneous medium with time-varying diffusion coefficient is analyzed. The conditions on spatial and temporal varying of diffusion coefficient, which correspond to maximal acceleration and deceleration of dopant diffusion time, have been determined.

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18

Richter, Grant, Allen Knepper, Paul J. Molino, and Timothy W. Hanks. "Chemically Triggered Dopant Release from Surface-Modified Polypyrrole Films." Surfaces 8, no. 2 (2025): 23. https://doi.org/10.3390/surfaces8020023.

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Polypyrrole (PPy) is cationic in its conducting form, requiring a charge-balancing counterion, or dopant. The release of bioactive dopants, driven by the reduction of PPy films, offers a route to controlled drug delivery. Thiol-terminated long chain poly (ethylene glycol) (PEG) reacts with a dodecylbenzene sulfonate (DBSA)-doped PPy, forming a dense overlayer and partially liberating DBSA via the chemical reduction of the film. The resulting PEG brush acts as a barrier to dopant diffusion from the film, but proteins have been shown to disrupt this layer, releasing the DBSA. The mechanism by wh

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19

Haberfehlner, Georg, Matthew J. Smith, Juan-Carlos Idrobo, et al. "Selenium Segregation in Femtosecond-Laser Hyperdoped Silicon Revealed by Electron Tomography." Microscopy and Microanalysis 19, no. 3 (2013): 716–25. http://dx.doi.org/10.1017/s1431927613000342.

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AbstractDoping of silicon with chalcogens (S, Se, Te) by femtosecond laser irradiation to concentrations well above the solubility limit leads to near-unity optical absorptance in the visible and infrared (IR) range and is a promising route toward silicon-based IR optoelectronics. However, open questions remain about the nature of the IR absorptance and in particular about the impact of the dopant distribution and possible role of dopant diffusion. Here we use electron tomography using a high-angle annular dark-field (HAADF) detector in a scanning transmission electron microscope (STEM) to ext

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20

Rucker, Holger, Bernd Heinemann, Rainer Kurps, and Yuji Yamamoto. "Dopant Diffusion in SiGeC Alloys." ECS Transactions 3, no. 7 (2019): 1069–75. http://dx.doi.org/10.1149/1.2355901.

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21

Filipowski, Wojciech. "Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer." Microelectronics International 36, no. 3 (2019): 104–8. http://dx.doi.org/10.1108/mi-12-2018-0079.

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Purpose The purpose of this paper was the development of a model enabling precise determination of phosphorus concentration profile in the emitter layer of a silicon solar cell on the basis of diffusion doping process duration and temperature. Fick’s second law, which is fundamental for describing the diffusion process, was assumed as the basis for the model. Design/methodology/approach To establish a theoretical model of the process of phosphorus diffusion in silicon, real concentration profiles measured using the secondary ion mass spectrometry (SIMS) method were used. Samples with the phosp

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22

Stanis, C., O. Thomas, J. Cotte, A. Charai, F. K. LeGoues, and F. M. d’Heurle. "Dopant diffusion in silicides: Effect of diffusion paths." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, no. 4 (1992): 907–11. http://dx.doi.org/10.1116/1.577693.

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23

Wolf, Herbert, F. Wagner, J. Kronenberg, and Th Wichert. "On the Formation of Unusual Diffusion Profiles in Cd_xZn_1-xTe Crystals after Implantation of Different Elements." Defect and Diffusion Forum 289-292 (April 2009): 587–92. http://dx.doi.org/10.4028/www.scientific.net/ddf.289-292.587.

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It is known that the diffusion of Ag and Cu in Cd1 xZnxTe crystals exhibits unusual concentration profiles depending strongly on the external vapor pressure of Cd during diffusion. Recent experiments show that the dopant Na forms qualitatively the same diffusion profiles including the phenomenon of uphill diffusion. Also the transition elements Ni and Co show a strong dependence of the diffusion behavior on the external Cd pressure, but the shapes of the concentration profiles differ significantly from those known for Ag and Cu. The different behavior of Ag, Cu, and Na, on the one hand, and Ni

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24

Chumakova, Natalia A., Elena N. Golubeva, Sergei V. Kuzin, et al. "New Insight into the Mechanism of Drug Release from Poly(d,l-lactide) Film by Electron Paramagnetic Resonance." Polymers 12, no. 12 (2020): 3046. http://dx.doi.org/10.3390/polym12123046.

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A novel approach based on convolution of the electron paramagnetic resonance (EPR) spectra was used for quantitative study of the release kinetics of paramagnetic dopants from poly(d,l-lactide) films. A non-monotonic dependence of the release rate on time was reliably recorded. The release regularities were compared with the dynamics of polymer structure changes determined by EPR, SEM, and optic microscopy. The data obtained allow for the conclusion that the main factor governing dopant release is the formation of pores connected with the surface. In contrast, the contribution of the dopant di

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Filipowski, Wojciech, Kazimierz Drabczyk, Edyta Wróbel, Piotr Sobik, Krzysztof Waczynski, and Natalia Waczynska-Niemiec. "Borosilicate spray-on glass solutions for fabrication silicon solar cell back surface field." Microelectronics International 35, no. 3 (2018): 172–76. http://dx.doi.org/10.1108/mi-12-2017-0075.

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Purpose The purpose of this paper is to develop a method of preparing spray-on dopant solutions that enable obtaining a p+ region forming a back-surface field (BSF) during the diffusion doping process. The spray-on method used allows to decrease the costs of dopant solution application, which is particularly significant for new low-cost production processes. Design/methodology/approach This paper presents steps of production of high concentration boron dopant solutions enabling diffusion doping of crystalline p-type silicon surfaces. To check the fabricated dopant solutions for stability and s

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26

Taiwo, Rasheed Ayinde, Yeongil Son, Joonghan Shin, and Yusuff Adeyemi Salawu. "Enhanced Activation in Phosphorous-Doped Silicon via Dual-Beam Laser Annealing." Materials 17, no. 17 (2024): 4316. http://dx.doi.org/10.3390/ma17174316.

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In this study, we conduct a comparative analysis of single-beam laser annealing (SBLA) and dual-beam laser annealing (DBLA) techniques for semiconductor manufacturing. In the DBLA approach, two laser beams were precisely aligned to simultaneously heat a phosphorus-doped silicon (Si) wafer. The main objective was to investigate the impact of the two annealing techniques on the electrical properties, crystalline structure, and diffusion profile of the treated phosphorus-doped Si at equivalent laser powers. Both SBLA and DBLA improved the electrical properties of the phosphorus-doped Si, evidence

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27

Portavoce, Alain, Isabelle Berbezier, Antoine Ronda, et al. "Dopant Diffusion in Si_1-xGe_x Thin Films: Effect of Epitaxial Stress." Defect and Diffusion Forum 249 (January 2006): 135–42. http://dx.doi.org/10.4028/www.scientific.net/ddf.249.135.

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We have investigated the lattice diffusion of B and Sb by means of molecular beam epitaxy in Si1−xGex (x < 0.2) layers grown on Si(001) substrate. Using Si1−xGex relaxed buffers we were able to differentiate the chemical effect (change in the Ge composition) as opposite to the biaxial stress effect (due to the epitaxy on Si) on dopant diffusion. B diffusion follows a behavior opposite to Sb diffusion versus Ge composition and biaxial stress. These results are explained in view of the difference of diffusion mechanism between B (interstitials) and Sb (vacancies). We also show that dopant dif

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28

Ma, N., and J. S. Walker. "A Model of Dopant Transport During Bridgman Crystal Growth With Magnetically Damped Buoyant Convection." Journal of Heat Transfer 122, no. 1 (1999): 159–64. http://dx.doi.org/10.1115/1.521446.

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This paper presents a model for the unsteady transport of a dopant during the vertical Bridgman crystal growth process with a planar crystal-melt interface and with an externally applied axial magnetic field. This dilute mass transport depends on the convective and diffusive mass transport of the dopant. The convective mass transport is driven by buoyant convection in the melt, which produces nonuniformities in the concentration in both the melt and the crystal. This convective transport is significant even for a strong magnetic field Bo=2 T. However, the electromagnetic damping of the melt mo

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Nilsson, Johan O., Mikael Leetmaa, Olga Yu Vekilova, Sergei I. Simak, and Natalia V. Skorodumova. "Oxygen diffusion in ceria doped with rare-earth elements." Physical Chemistry Chemical Physics 19, no. 21 (2017): 13723–30. http://dx.doi.org/10.1039/c6cp06460d.

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30

Law, M. E., H. Park, and P. Novell. "Theory of dopant diffusion assuming nondilute concentrations of dopant‐defect pairs." Applied Physics Letters 59, no. 26 (1991): 3488–89. http://dx.doi.org/10.1063/1.105662.

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Dissanayake, Sashini Senali, Nicole O. Pallat, Philippe K. Chow, et al. "Carrier lifetimes in gold–hyperdoped silicon—Influence of dopant incorporation methods and concentration profiles." APL Materials 10, no. 11 (2022): 111106. http://dx.doi.org/10.1063/5.0126461.

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Incorporating ultrahigh concentrations of deep-level dopants in silicon drastically alters silicon’s optoelectronic properties. Photodiodes built from silicon hyperdoped with gold extend light sensitivity into the shortwave infrared region, far beyond the absorption edge of a pristine silicon sample. Deep-level dopants, however, also enhance carrier recombination; even though hyperdoped silicon has great light absorption properties, short charge carrier lifetime limits its applications. In this work, using terahertz spectroscopy, we investigate the charge carrier lifetime of gold–hyperdoped si

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32

Jäger, Wolfgang. "Diffusion and Defect Phenomena in III-V Semiconductors and their Investigation by Transmission Electron Microscopy." Diffusion Foundations 17 (July 2018): 29–68. http://dx.doi.org/10.4028/www.scientific.net/df.17.29.

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This article reviews the studies of diffusion and defect phenomena induced by high-concentration zinc diffusion in the single-crystal III-V compound semiconductors GaAs, GaP, GaSb and InP by methods of transmission electron microscopy and their consequences for numerical modelling of Zn (and Cd) diffusion concentration profiles. Zinc diffusion from the vapour phase into single-crystal wafers has been chosen as a model case for interstitial-substitutional dopant diffusion in these studies. The characteristics of the formation of diffusion-induced extended defects and of the temporal evolution o

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Portavoce, Alain, Roberto Simola, Dominique Mangelinck, Jean Bernardini, and Pascal Fornara. "Dopant Diffusion during Amorphous Silicon Crystallization." Defect and Diffusion Forum 264 (April 2007): 33–38. http://dx.doi.org/10.4028/www.scientific.net/ddf.264.33.

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We have investigated the redistribution of B during the crystallization of an amorphous Si layer homogeneously doped with P. The redistribution of B only occurs for concentrations lower than 2 × 1020 at cm−3. Crystallization leads to a non “Fickian” redistribution, allowing an abrupt interface between the regions doped and undoped with B. Once the crystallization is ended, B diffuses through the layer in the type B regime with a coefficient which is in agreement with the literature data for diffusion in polycrystalline Si. Although the P distribution is homogeneous in the entire layer, for a t

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Stadler, A., T. Sulima, J. Schulze, et al. "Dopant diffusion during rapid thermal oxidation." Solid-State Electronics 44, no. 5 (2000): 831–35. http://dx.doi.org/10.1016/s0038-1101(99)00287-7.

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Lyytik�inen, K., S. T. Huntington, A. L. G. Carter, et al. "Dopant diffusion during optical fibre drawing." Optics Express 12, no. 6 (2004): 972. http://dx.doi.org/10.1364/opex.12.000972.

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Glitzky, A., and W. Merz. "Single dopant diffusion in semiconductor technology." Mathematical Methods in the Applied Sciences 27, no. 2 (2003): 133–54. http://dx.doi.org/10.1002/mma.447.

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Gribelyuk, Michael A., Sanjay Mehta, Jeffrey B. Johnson, and Lee Kimball. "Two-dimensional dopant potential mapping in a fin field effect transistor by off-axis electron holography." Journal of Applied Physics 132, no. 4 (2022): 045702. http://dx.doi.org/10.1063/5.0091586.

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Progress in the development of nanometer scaled Fin Field Effect Transistor (FinFET) devices is affected by a lack of understanding of relevant dopant diffusion phenomena due to limited experimental data. In particular, 2D dopant potential mapping by electron holography in 3D FinFET devices has been challenged by the overlap of electrically active fins, metal films, and dielectric films in the electron beam direction. This paper presents methodology on how to map dopant potential in modern FinFET devices. A custom-device structure was developed, which preserved all essential features of the de

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Duggan, Shane P., Hua Yang, Niall P. Kelly та ін. "P‐substrate InP‐based 1.5 μm lasers using an internal carbon‐doped layer to block p‐dopant diffusion". Microwave and Optical Technology Letters 60, № 10 (2018): 2363–67. http://dx.doi.org/10.1002/mop.31364.

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AbstractP‐substrate AlGaInAs/InP lasers are enabled using an internal carbon‐doped layer to block Zn‐diffusion. These inverted lasers are developed for the aim of further monolithic vertical integration with passive or active material, which would allow full system on‐chip integration. The lasers emit at 1.5 μm making them ideal for telecommunication applications. Different p‐substrate laser designs were grown to quantify the effect the carbon doped layer had on blocking Zn p‐dopants diffusion, which permits the long growths necessary for vertical integration. Current, voltage, and capacitance

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Chevallier, Jacques, François Jomard, Cecile Saguy, R. Kalish, and A. Deneuville. "Hydrogen Diffusion Mechanisms and Hydrogen-Dopant Interactions in Diamond." Advances in Science and Technology 46 (October 2006): 63–72. http://dx.doi.org/10.4028/www.scientific.net/ast.46.63.

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Electronic grade diamond is usually grown by Microwave Plasma assisted CVD from a hydrogen rich CH4/H2 mixture, hence hydrogen is likely to be incorporated during growth. It may thus affect the properties of the material. In this work, we present the state of the art on the understanding of the diffusion properties of hydrogen and of the hydrogen-dopant interactions in diamond. First, we show the existence of strong interactions between H and boron dopants in diamond. The formation of H-acceptor pairs results in the passivation of the acceptors. Further, we show that an excess of hydrogen in s

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Bracht, Hartmut. "Diffusion and defect reactions in isotopically controlled semiconductors." Diffusion Fundamentals 8 (July 1, 2008). http://dx.doi.org/10.62721/diffusion-fundamentals.8.161.

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Point defects in semiconductors play a decisive role for the functionality of semiconductors. A detailed, quantitative understanding of diffusion and defect reactions of dopants is required for advanced modelling of modern nanometer size electronic devices. With isotope heterostructures which consist of epitaxial layers of isotopically pure and deliberately mixed stable isotopes, we have studied the simultaneous self- and dopant diffusion in several major semiconductors such as silicon and germanium. Detailed analysis of the simultaneous diffusion of self- and dopant atoms in Si and Ge yields

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41

Liu, Chun-Li. "Screening Beneficial Dopants to Cu Interconnect by Modeling." MRS Proceedings 677 (2001). http://dx.doi.org/10.1557/proc-677-aa7.13.

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Cu is currently being used as the new generation of advanced interconnects. Beneficial additives or dopants to Cu have been sought to improve the electromigration performance of the Cu interconnects primarily through experimental approaches [1]. As a vital alternative, we have established a virtual simulation procedure to screen the potential dopants to Cu by modeling. There are many factors such as film density, stress, stress- voiding, grain boundary defect / diffusion, interface adhesion / defect / diffusion, grain structures (texture, grain size and size distribution) and so on that can af

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42

Ural, Ant, Serene Koh, P. B. Griffin, and J. D. Plummer. "What Does Self-Diffusion Tell Us about Ultra Shallow Junctions?" MRS Proceedings 610 (2000). http://dx.doi.org/10.1557/proc-610-b4.11.

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AbstractUnderstanding the coupling between native point defects and dopants at high concentrations in silicon will be key to ultra shallow junction formation in silicon technology. Other effects, such as transient enhanced diffusion (TED) will become less important. In this paper, we first describe how thermodynamic properties of the two native point defects in silicon, namely vacancies and self-interstitials, have been obtained by studying self-diffusion in isotopically enriched structures. We then discuss what this tells us about dopant diffusion. In particular, we show that the diffusion of

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43

Ohdomari, I., K. Konuma, M. Takano, et al. "Dopant Redistribution During Silicide Formation." MRS Proceedings 54 (1985). http://dx.doi.org/10.1557/proc-54-63.

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ABSTRACTAfter the review of dopant redistribution phenomena observed during formation of near noble metal suicides, we describe the results of our recent experiments to get a better understanding of a mechanism of the dopant redistribution phenomenon in Si substrates. The key factors to understand the dopant redistribution are dopant segregation at the suicide/ Si interface due to lower solubility limit of dopants in suicides, enhanced diffusion of dopants into the Si substrate at much lower temperatures than the ordinary thermal diffusion, and electrical activation of the redistributed dopant

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44

Tischler, M. A., and T. F. Kuech. "Incorporation and Diffusion of P-Type Dopants for Metal Organic Vapor Phase Epitaxy." MRS Proceedings 144 (1988). http://dx.doi.org/10.1557/proc-144-91.

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ABSTRACTThe control of p-type dopants is very important in producing high performance minority carrier devices such as heterojunction bipolar transistors (HBT) and lasers. In this study, an electrical characterization technique is described which is very sensitive to the p-type dopant profile in a heterojunction. Both the placement of the dopant, i.e. the as-grown profile, and thermal diffusion effects have been investigated. The factors which control the initial placement and subsequent diffusion of the dopant species have been determined and used to produce device-quality GaAs/Al0.30Ga0.70As

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45

Deal, M. D., C. J. Hu, C. C. Lee, and H. G. Robinson. "Modeling Dopant Diffusion in Gallium Arsenide." MRS Proceedings 300 (1993). http://dx.doi.org/10.1557/proc-300-365.

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ABSTRACTWe have been developing models for our process simulators, SUPREM 3.5 and SUPREM-IV, for processes used in the fabrication of GaAs devices. Our initial experiments led to relatively simple models for diffusion of common dopants in GaAs, usually dependent only on temperature and the local dopant or carrier concentration. These models were incorporated into our first GaAs simulator, SUPREM 3.5. While these simple models were adequate for some process conditions, there are many cases where anomalous diffusion occurs and these models break down. The generally accepted diffusion mechanisms

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Bunea, Marius M., and Scott T. Dunham. "Lattice Monte Carlo Simulations of Vacancy-Mediated Diffusion and Aggregation using Ab-Initio Parameters." MRS Proceedings 469 (1997). http://dx.doi.org/10.1557/proc-469-353.

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The lattice Monte Carlo method with parameters from recent first-principle calculations1,2 are used to investigate dopant diffusion in silicon. In the simulations, vacancy hopping on a silicon lattice is biased by changes in system energy, including interactions up to the sixth-nearest neighbor. We find that vacancy-mediated diffusivity increases dramatically above 1020 cm−3, in agreement with experimental observations3 and previous calculations.4 However, for very long simulation times, arsenic diffusivity is reduced due to formation of AsxV complexes, with clustering more pronounced at high

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Li, Hong-Jyh, Robin Tichy, Jonathon Ross, Jeff Gelpey, Ben Stotts, and Heather Galloway. "Dopant Diffusion Simulation in Thin-SOI." MRS Proceedings 765 (2003). http://dx.doi.org/10.1557/proc-765-d5.8.

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AbstractAs the top Si layer is thinned, the dopants' diffusion in the confined Si layer in SOI wafer with respect to different thermal treatments needs to be better understood. Boron, BF2 with/without Ge pre-amorphization were implanted into bulk Si and SOI wafers with 530 Å Si and 1475A BOX. Samples were annealed using both spike (Impulse) anneal and Flash anneal. Simulations of dopant diffusion is used to resolve apparent differences in dopant profiles that resulted for SOI in contrast with bulk Si samples. Result suggests that the implantation damage difference between SOI and bulk Si makes

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Yang, Yunqi, Dongdong Chen, Di Li, et al. "Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO₂ Interface." Advanced Materials Interfaces, October 23, 2024. http://dx.doi.org/10.1002/admi.202400751.

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AbstractSi/SiO2 interfaces, important parts of Si‐based devices, significantly influence the performance of Si‐based devices. However, owing to the impact of the external environment, related defects are generated, and the dopant can diffuse and redistribute, causing a series of parasitic effects that reduce the lifespan of the devices. In this paper, recent investigations on the mechanisms of interface defect initiation and dopant diffusion are systematically reviewed. At the Si/SiO2 interface, Pb‐type center defects are identified, including Pb, Pb0, and Pb1 center defects. Near the interfac

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d'Heurle, F. M., A. E. Michel, F. K. LeGoues, G. Scilla, J. T. Wetzel, and P. Gas. "Dopant Diffusion in TiSi2." MRS Proceedings 77 (1986). http://dx.doi.org/10.1557/proc-77-333.

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ABSTRACTDopant elements, B and Ga, P, As and Sb, and Ge as well, have been implanted into thick (350–400 nm) layers of TiSi2 prepared by Ti-Si reaction. Both B and Sb appear to be immobile, this behavior is thought to result from very small solid solubilities, rather than from very small diffusion coefficients. The other elements display about the same behavior, with detectable grain boundary diffusion at temperatures as low as 600°C, and lattice diffusion becoming considerable at 750°C, so that with the cooperation of both phenomena almost complete homogenisation of these relatively thick lay

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Sawada, Ryohto, Kosuke Nakago, Chikashi Shinagawa, and So Takamoto. "High-throughput investigation of stability and Li diffusion of doped solid electrolytes via neural network potential without configurational knowledge." Scientific Reports 14, no. 1 (2024). http://dx.doi.org/10.1038/s41598-024-62054-7.

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AbstractSolid electrolytes hold substantial promise as vital components of all-solid-state batteries. Enhancing their performance necessitates simultaneous improvements in their stability and lithium conductivity. These properties can be calculated using first-principles simulations, provided that the crystal structure of the material and the diffusion pathway through the material are known. However, solid electrolytes typically incorporate dopants to enhance their properties, necessitating the optimization of the dopant configuration for the simulations. Yet, performing such calculations via

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