Relevant bibliographies by topics / Epitaxial emitters

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Academic literature on the topic 'Epitaxial emitters'

Author: Grafiati
Published: 3 June 2025
Last updated: 31 July 2025

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Journal articles on the topic "Epitaxial emitters"

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Smith, Logan, K. Elena Harbison, Benjamin T. Diroll, and Igor Fedin. "Acceleration of Near-IR Emission through Efficient Surface Passivation in Cd3P2 Quantum Dots." Materials 16, no. 19 (2023): 6346. http://dx.doi.org/10.3390/ma16196346.

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Fast near-IR (NIR) emitters are highly valuable in telecommunications and biological imaging. The most established NIR emitters are epitaxially grown InxGa1−xAs quantum dots (QDs), but epitaxial growth has several disadvantages. Colloidal synthesis is a viable alternative that produces a few NIR-emitting materials, but they suffer from long photoluminescence (PL) times. These long PL times are intrinsic in some NIR materials (PbS, PbSe) but are attributed to emission from bright trapped carrier states in others. We show that Cd3P2 QDs possess substantial trap emission with radiative times >
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Slyotov, M. M., O. M. Slyotov, H. V. Potsіluiko-Hryhoriak, M. P. Mazur, and Т. М. Mazur. "GaN based light emitters." Physics and Chemistry of Solid State 25, no. 2 (2024): 297–302. http://dx.doi.org/10.15330/pcss.25.2.297-302.

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The article discusses the preparation of epitaxial layers and GaN crystals, as well as the results of studies of their optical and luminescent properties. The parameters of the band structure of the resulting hexagonal modification materials ΔCR ≈ 10 meV and ΔSO ≈ 48 meV were determined. The mechanisms of the main recombination processes that determine the formation of radiation from undoped and Zn-doped materials have been established. The role of interband recombination and annihilation of excitons in the formation of radiation in the high-energy region and transitions of carriers through en
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Seifner, Michael S., Alain Dijkstra, Johannes Bernardi, et al. "Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters." ACS Nano 13, no. 7 (2019): 8047–54. http://dx.doi.org/10.1021/acsnano.9b02843.

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Rachow, T., N. Milenkovic, S. Janz, and S. Reber. "Formation of High Efficiency Epitaxial Emitters by APCVD." Energy Procedia 27 (2012): 438–43. http://dx.doi.org/10.1016/j.egypro.2012.07.090.

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Sasani Ghamsari, Morteza. "Chip-Scale Quantum Emitters." Quantum Reports 3, no. 4 (2021): 615–42. http://dx.doi.org/10.3390/quantum3040039.

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Integration of chip-scale quantum technology was the main aim of this study. First, the recent progress on silicon-based photonic integrated circuits is surveyed, and then it is shown that silicon integrated quantum photonics can be considered a compelling platform for the future of quantum technologies. Among subsections of quantum technology, quantum emitters were selected as the object, and different quantum emitters such as quantum dots, 2D materials, and carbon nanotubes are introduced. Later on, the most recent progress is highlighted to provide an extensive overview of the development o
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Chen, Chengzhao, Cheng Li, Shihao Huang, Yuanyu Zheng, Hongkai Lai, and Songyan Chen. "Epitaxial Growth of Germanium on Silicon for Light Emitters." International Journal of Photoenergy 2012 (2012): 1–8. http://dx.doi.org/10.1155/2012/768605.

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This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.
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Skipper, Alec M., Priyanka Petluru, Daniel J. Ironside, et al. "All-epitaxial, laterally structured plasmonic materials." Applied Physics Letters 120, no. 16 (2022): 161103. http://dx.doi.org/10.1063/5.0094677.

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Optoelectronic devices in the mid-infrared have attracted significant interest due to numerous potential applications in communications and sensing. Molecular beam epitaxial (MBE) growth of highly doped InAs has emerged as a promising “designer metal” platform for the plasmonic enhancement of mid-infrared devices. However, while typical plasmonic materials can be patterned to engineer strong localized resonances, the lack of lateral control in conventional MBE growth makes it challenging to create similar structures compatible with monolithically grown plasmonic InAs. To this end, we report th
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Shlepr, M. G., G. A. Schrantz, A. L. Rivoli, and G. Bajor. "The Influence of Dopant Type on Polysilicon Grain Growth and Solid Phase Epitaxial Regrowth." Microscopy and Microanalysis 3, S2 (1997): 477–78. http://dx.doi.org/10.1017/s1431927600009272.

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A recent process technology to manufacture bipolar junction transistors utilizes polysilicon emitters. Polysilicon is deposited, appropriately doped to form both NPN and PNP transistors, and exposed to temperatures that result in grain growth. Since polysilicon is in contact with Si( 100) at the emitter, base, and collector (Fig. 1), solid phase epitaxial regrowth might also occur. Production runs with this structure occasionally produce transistors with low current gain. High and low gain NPN and PNP transistors were characterized by transmission electron microscopy.Vertical sections through
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Muller, Andreas, Chih-Kang Shih, Jaemin Ahn, Dingyuan Lu, and Dennis G. Deppe. "Isolated single quantum dot emitters in all-epitaxial microcavities." Optics Letters 31, no. 4 (2006): 528. http://dx.doi.org/10.1364/ol.31.000528.

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Spindlberger, Lukas, Johannes Aberl, Felipe Murphy Armando, Thomas Fromherz, and Moritz Brehm. "Epitaxial Group-IV Quantum Dots as Room-Temperature Light Emitters." ECS Meeting Abstracts MA2024-01, no. 22 (2024): 1311. http://dx.doi.org/10.1149/ma2024-01221311mtgabs.

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Next-generation Si-based applications ranging from short-range (quantum) data transfer to sensing could highly benefit from potential progress in group-IV-based telecom light emitters that can be readily implemented with Si Photonics components [1]. However, since Si is known to be an indirect band gap semiconductor, light emission is limited and inhibits the integration of efficient emitters, such as, e.g. light-emitting diodes and lasers on Si Photonic platforms. In this presentation, we stress that a particular type of epitaxial Ge on Si quantum dots allows for overcoming the indirect bandg
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Dissertations / Theses on the topic "Epitaxial emitters"

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Pantha, Bed Nidhi. "Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation." Diss., Kansas State University, 2009. http://hdl.handle.net/2097/2199.

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Doctor of Philosophy<br>Department of Physics<br>Jingyu Lin<br>III-nitride nanostructures and devices were synthesized by metal organic chemical vapor deposition (MOCVD) for their applications in various photonic, optoelectronic, and energy devices such as deep ultraviolet (DUV) photodetectors, solar cells, visible emitters, thermometric (TE) power generators, etc. Structural and optical properties in thicker AlN epilayers were found to be better than those in thinner AlN epilayers. Full-width at half maxima (FWHM) of x-ray diffraction (XRD) rocking curves as small as 63 and 437 arcsec were m
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Girgel, Ionut. "Development of InGaN/GaN core-shell light emitters." Thesis, University of Bath, 2017. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.720648.

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Gallium nitride (GaN) and its related semiconductor alloys are attracting tremendous interest for their wide range of applications in blue and green LEDs, diode lasers, high-temperature and high-power electronics. Nanomaterials such as InGaN/GaN core-shell three-dimensional nanostructures are seen as a breakthrough technology for future solid-state lighting and nano-electronics devices. In a core-shell LED, the active semiconductor layers grown around a GaN core enable control over a wide range of wavelengths and applications. In this thesis the capability for the heteroepitaxial growth of a p
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Koerperick, Edwin John. "High power mid-wave and long-wave infrared light emitting diodes: device growth and applications." Diss., University of Iowa, 2009. https://ir.uiowa.edu/etd/304.

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High brightness light emitting diodes based on the InAs/GaSb superlattice material system have been developed for use in mid-wave and long-wave infrared optoelectronic systems. By employing a multiple active region device configuration, high optical output has been demonstrated from devices in the 3-5μm and 7-12μm spectral bands. Mid-wave infrared optical output in excess of 0.95mW/sr has been observed from 120×120μm2 devices with peak emission at 3.8μm, and nearly 160μW/sr has been measured from devices of the same size operating at 8μm. Larger devices (1×1mm^2) with output as high as 8.5mW/s
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Wiesner, Michael [Verfasser]. "InP-Quantenpunkte auf Si – Epitaxie und Charakterisierung nulldimensionaler III-V-Emitter auf Si(100)-basierten Substraten / Michael Wiesner." München : Verlag Dr. Hut, 2013. http://d-nb.info/1031844643/34.

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Leal, Ronan. "Epitaxial growth of silicon by PECVD from SiF4/H2/Ar gas mixtures for photovoltaics." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLX038.

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Cette thèse de doctorat évalue le potentiel de la croissance épitaxiale à basse température (200-300°C) par dépôt chimique en phase vapeur assisté par plasma à partir de SiF4/H2/Ar pour la formation de l’émetteur dans des cellules solaires de type nPERT. La première partie concerne l’identification et l’optimisation des conditions de dépôt pour réaliser des couches épitaxiées faiblement contraintes avec une interface epi/wafer de bonne qualité. La perte d’épitaxie a également été étudiée et nous avons mis en évidence que la formation de macles au cours de la croissance était responsable de la
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Gravier, Thierry. "Etude de l'architecture émetteur/base de transistors bipolaires simple polysilicium pour filières BICMOS 0. 5-0. 35 µm." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10262.

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Ce travail concerne les architectures de transistors bipolaires npn a un niveau de polysilicium (emetteur), compatibles avec les technologies cmos. Nous proposons des concepts novateurs dans le but de repousser l'utilisation de ce type d'architecture pour des technologies bicmos 0,35 microns. Dans un premier temps, nous nous sommes interesses a la formation de la base du transistor et avons etudie deux approches nouvelles dans ce domaine. Tout d'abord, des bases minces ont ete obtenues par diffusion du dopant de base (bore) depuis le polysicilium formant l'emetteur. Ce dopant est au prealable
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Akra, Ahiram el. "Croissance de boîtes quantiques In(Ga)As sur substrats de silicium et de SOI pour la réalisation d'émetteurs de lumière." Phd thesis, Ecole Centrale de Lyon, 2012. http://tel.archives-ouvertes.fr/tel-00952829.

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Cette thèse porte sur l'étude de la croissance auto-organisée de boîtes quantiques d'In(Ga)As sur substrat de silicium visant à l'intégration monolithique d'un émetteur de lumière sur silicium à base d'un matériau semiconducteur III-V. Le développement d'un tel système se heurte à deux verrous majeurs : le premier provient d'un très fort désaccord de maille qui rend difficile l'élaboration de boîtes quantiques d'In(Ga)As sur Si présentant de bonnes qualités structurales et optiques, et le second provient de la nature électronique de l'interface entre In(Ga)As et le Si dont il est prédit qu'ell
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Tasselli, Josiane. "Etude et realisation de structures bipolaires particulieres a heterojonction gaas-gaaias : application aux circuits integres de type ecl." Toulouse 3, 1986. http://www.theses.fr/1986TOU30019.

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Ce memoire presente l'etude et la realisation d'un circuit integre bipolaire de type ecl sur arseniure de gallium. Une etude theorique de transistors bipolaires a double heterojonction a montre l'influence determinante de la jonction collecteur-base, notamment de sa gradualite, sur leur comportement electrique. Ces resultats ont pu etre confirmes par une analyse experimentale a partir de structures realisees par epitaxie en phase liquide. La simulation et l'optimisation d'un oscillateur en anneau a base de simples heterotransistors et mettant en oeuvre le logiciel astec iii, ont permis de calc
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Books on the topic "Epitaxial emitters"

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L, Gunshor Robert, and Nurmikko Arto V, eds. II-VI blue/green light emitters: Device physics and epitaxial growth. Academic Press, 1997.

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Book chapters on the topic "Epitaxial emitters"

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Sugii, T., T. Yamazaki, Y. Arimoto, et al. "SiCχ:F Hetero-Emitter and Epitaxial-Base Bipolar Transistors." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84804-9_45.

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Balachandran, S., T. P. Chow, and Anant Agarwal. "Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs." In Materials Science Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.909.

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Kishino, Katsumi, and Hiroto Sekiguchi. "Molecular Beam Epitaxial Growth of GaN Nanocolumns and Related Nanocolumn Emitters." In Novel Compound Semiconductor Nanowires. Jenny Stanford Publishing, 2017. http://dx.doi.org/10.1201/9781315364407-2.

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Harris, J. J., and C. T. Foxon. "Growth And Fabrication Of Semiconductor Devices For Hot-Electron Research." In Hot Electrons in Semiconductors. Oxford University PressOxford, 1997. http://dx.doi.org/10.1093/oso/9780198500582.003.0003.

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Abstract The performance of many electronic devices is influenced by, and in some cases dependent on, hot-electron effects. With the advent of highly controlled epitaxial deposition systems such as molecular beam epitaxy (MBE) and metallorganic vapour phase epitaxy (MOVPE), coupled with the development of lithographic processes capable of submicron definition, not only has the realization of many novel device structures become possible, but the topic of hot-electron behaviour has been opened up to a wide variety of investigative techniques. Electronic devices can be thought of as being compose
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Conference papers on the topic "Epitaxial emitters"

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Takeuchi, Hideo, Kai Matsunaga, Yusuke Sengi, Jared Mitchell, and Rachel Goldman. "Nitridation Effects of a GaAs Epitaxial Layer on Extending of the Decay Time of Terahertz Electromagnetic Waves Emitted from Coherent Longitudinal Optical Phonons Observed with the Use of Terahertz Time-Domain Spectroscopy." In 2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, 2024. http://dx.doi.org/10.1109/irmmw-thz60956.2024.10697725.

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Hakkarainen, Teemu, Joonas Hilska, Abhiroop Chellu, et al. "Properties of GaSb-based 1.5 µm Quantum Dot Emitters." In CLEO: Fundamental Science. Optica Publishing Group, 2023. http://dx.doi.org/10.1364/cleo_fs.2023.ff3g.3.

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Epitaxial fabrication, energy structure, and emission properties of GaSb quantum dots formed by filling droplet-etched nanoholes are presented. These quantum-photonics building blocks emit at 1.5 µm enabling wavelength compatibility with fiber optics and Si-photonics.
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Tamura, Koichi, Chao Tang, Daichi Ogiura, et al. "Fast and sensitive THz detection by an asymmetric-dual-grating-gate epitaxial-graphene-channel FET based on plasmonic and photothermoelectric rectification effects." In Terahertz Emitters, Receivers, and Applications XIV, edited by Manijeh Razeghi and Mona Jarrahi. SPIE, 2023. http://dx.doi.org/10.1117/12.2676102.

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Nurnus, J., U. Vetter, J. Koenig, et al. "Optically pumped mid infrared emitters built using surface structured PbSe epitaxial layers." In Microtechnologies for the New Millennium 2005, edited by Goncal Badenes, Derek Abbott, and Ali Serpenguzel. SPIE, 2005. http://dx.doi.org/10.1117/12.608779.

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Beigang, René, Garik Torosyan, Sascha Keller, Laura Scheuer, and Evangelos T. Papaioannou. "Spintronic terahertz emitters based on epitaxial-grown Fe/Pt Bilayers (Conference Presentation)." In Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI, edited by Laurence P. Sadwick and Tianxin Yang. SPIE, 2018. http://dx.doi.org/10.1117/12.2289489.

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Christensen, D. H., and F. S. Barnes. "Vertical cavity surface emitting laser structure in molecular beam epitaxial GaAs - AlGaAs using multilayer dielectric mirror." In Semiconductor Lasers. Optica Publishing Group, 1987. http://dx.doi.org/10.1364/sla.1987.wa7.

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Several types of surface emitting laser diodes have been fabricated by various groups: the etched mirror device; the vertical cavity device2, and the second order distributed Bragg reflector device3. Operating characteristics of vertical cavity devices have been poor in comparison to the other surface emitter types, however, some characteristics still make it very attractive in potential applications. With the development of high quality epitaxial multilayers of GaAs and AlGaAs for use as mirrors4 and simultaneously as conducting layers, it should be possible to realize vertical cavity devices
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Baba, Razvan, Kristof J. P. Jacobs, Benjamin J. Stevens, Brett A. Harrison, Toshikazu Mukai, and Richard A. Hogg. "Fabrication, characterisation, and epitaxial optimisation of MOVPE-grown resonant tunnelling diode THz emitters." In SPIE OPTO, edited by Manijeh Razeghi. SPIE, 2017. http://dx.doi.org/10.1117/12.2252377.

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Van Nieuwenhuysen, K., M. Recaman Payo, I. Kuzma-Filipek, J. Van Hoeymissen, E. Van Kerschaever, and J. Poortmans. "Epitaxial thin film silicon solar cells with CVD grown emitters exceeding 16% efficiency." In 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411137.

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Baba, Razvan, Benjamin J. Stevens, Toshikazu Mukai, and Richard A. Hogg. "Epitaxial design for maximising wall plug efficiency in resonant tunnelling diode terahertz emitters." In 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2016. http://dx.doi.org/10.1109/irmmw-thz.2016.7758959.

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Asbeck, P. M. "Heterojunction Bipolar Transistor Technology for High Speed Integrated Circuits." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/peo.1985.fb1.

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A bipolar structure provides many potential benefits for picosecond electronic circuits: (a) current flow is vertical, through epitaxial layers whose total thickness is only a few tenths of a micron, decreasing carrier transit times; (b) large amounts of current can be carried by modest size transistors, enabling rapid charging of interconnect capacitances; and (c) threshold voltages are tied to built-in potentials of p-n junctions, which are easy to reproduce device-to-device, enabling accurate logic voltages to be established. Added advantages result from using III-V heterojunctions rather t
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