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Relevant bibliographies by topics / Film dielectric systems / Dissertations / Theses

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Dissertations / Theses on the topic 'Film dielectric systems'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Lee, Sangjin. "Structure-Property Relationships in Composite Layers Polymeric Film/Foam Systems." Case Western Reserve University School of Graduate Studies / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=case1473444646138984.

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2

Малюшевська, А. П. "Вплив підвищеної температури на експлуатаційні властивості просочуючої рідини плівкових діелектричних систем високовольтних електротехнічних пристроїв". Thesis, Сумський державний університет, 2016. http://essuir.sumdu.edu.ua/handle/123456789/46234.

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Мета дослідження - вивчення термостабільності експлуатаційних властивостей трансформаторного масла Т-1500, яке використовується для просочення поліпропіленово-поліетилентерефталатних діелектричних системах високовольтних імпульсних конденсаторів.

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3

Rajgadkar, Ajay. "Characterization of Dielectric Films for Electrowetting on Dielectric Systems." Scholar Commons, 2010. http://scholarcommons.usf.edu/etd/3607.

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Electrowetting is a phenomenon that controls the wettability of liquids on solid surfaces by the application of electric potential. It is an interesting method to handle tiny amounts of liquid on solid surfaces. In recent times, researchers have been investigating this phenomenon and have reported some unexplained behavior and degradation in the Electrowetting system performance. Electrowetting systems include the presence of electric field and different materials from metals to dielectrics and electrolytes that create an environment in which corrosion processes play a very important role. Wit

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4

Dhanapala, Hembathanthirige Yasas. "Dielectric Constant Measurements Using Atomic Force Microscopy System." Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1347907325.

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5

Reddy, Raj. "A study of high-K dielectric materials in conjunction with a multilayer thick-film system." Thesis, Virginia Tech, 1988. http://hdl.handle.net/10919/43280.

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A new family of dielectric materials has been studied, individually as thick-film capacitors and as buried components incorporated in second-order lowpass and bandpass RC active filter circuits. The materials were electrically characterized in terms of the variation of dielectric constant and dissipation factor with frequency. The performance of the filter circuit is related to the characteristics of the dielectric materials. An analysis of the circuit is developed which accounts for the capacitor losses.<br>Master of Science

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6

Carr, Joel Matthew. "CONFINED LAYERED POLYMERIC SYSTEMS FOR PACKAGING ANDCAPACITOR APPLICATIONS." Case Western Reserve University School of Graduate Studies / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=case1363104386.

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7

Li, Zhenpeng. "Information Programming by Scaling of Polymeric Layered Systems." Case Western Reserve University School of Graduate Studies / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=case154834158541737.

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8

Yao, Junpin. "Control of Molecular Contaminants in Porous Low-k Dielectric Films and in UHP Gas Delivery Systems." Diss., The University of Arizona, 2008. http://hdl.handle.net/10150/195243.

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As compared to silicon oxide, porous low-k dielectric materials are more susceptible to molecular contaminants. As the device feature size decreases, control of molecular contaminants in porous low-k dielectric films and in UHP gas delivery systems becomes increasingly more challenging. Moisture was selected as the principal model contaminant in this research because the moisture impurity retained in the dielectric films not only increases the effective dielectric constant (k) value of the films but also degrades the reliability of the device. Dry-down of moisture contaminated UHP systems t

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9

Dusatko, Tomas A. "Silicon carbide RF-MEM resonators." Thesis, McGill University, 2006. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=100250.

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A low-temperature (<300°C) method to fabricate electrostatically actuated microelectromechanical (MEM) clamped-clamped beam resonators has been developed. It utilizes an amorphous silicon carbide (SiC) structural layer and a thin polyimide spacer. The resonator beam is constructed by DC sputtering a tri-layer composite of low-stress SiC and aluminum over the thin polyimide sacrificial layer, and is then released using a microwave O 2 plasma etch. Deposition parameters have been optimized to yield low-stress films (<50MPa), in order to minimize the chance of stress-induced buckling or fracture

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10

Berkner, Joachim Ernst. "Synthesis and characterization of new organic electrically conducting polymers : part II: Direct carboxylation of sulfolene : part III: Effect of water on PTC systems : part IV: Mechanism of Phase transfer catalytic N-alkylation reactions." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/30715.

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11

Young, Chadwin Delin. "Charge trapping characterization methodology for the evaluation of hafnium-based gate dielectric film systems." 2003. http://www.lib.ncsu.edu/theses/available/etd-12222003-014217/unrestricted/etd.pdf.

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12

Chen, Sung-Te, and 陳松德. "Applications of plasma and electrochemical integrated deposition processes to copper/low-dielectric-constant thin-film interconnection systems." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/53894801511287258997.

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博士<br>逢甲大學<br>材料科學所<br>92<br>Abstract This dissertation describes the development and important findings of the following two plasma-related electrochemical deposition techniques: (I) using plasma surface treatments to modify low-dielectric-constant (k) thin films and thus to grow in-situ “intrinsic” dielectric barriers; (II) presenting a “self-aligned”, all electrochemical plating process to grow electrolessly plated copper and metal barriers. Part I, described in chapter 4, illustrates the response of spin-coated hybrid organic siloxane polymer (HOSP) films, in terms of dielectric, physical

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13

"study of wave propagation in nonlinear dielectric multilayer system =: 電磁波於多層非線性電介質系統內傳播之硏究". 1999. http://library.cuhk.edu.hk/record=b5890076.

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by Leung, Kwok Kong.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 1999.<br>Includes bibliographical references (leaves 67).<br>Text in English; abstracts in English and Chinese.<br>by Leung, Kwok Kong.<br>Abstract --- p.ii<br>Acknowledgement --- p.iii<br>Contents --- p.iv<br>List of Figures --- p.vi<br>Chapter Chapter 1. --- Introduction --- p.1<br>Chapter Chapter 2. --- Transmittance in Metal-Dielectric Multilayers --- p.4<br>Chapter 2.1 --- Introduction --- p.4<br>Chapter 2.2 --- Transfer matrix approach --- p.5<br>Chapter 2.3 --- Transfer matrix simulation --- p.7<br>Chapt

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14

潘易民. "characterization and synthesis of low-dielectric nitrogen doped fluorinated amophous carbon films by electron cyclotron resonance chemical deposition system." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/12414885586226134025.

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15

Nai-ChaoSu and 蘇迺超. "A Study on Oxide-Semiconductor-Based Thin-Film Transistors and Memories with High-k Gate Dielectrics for System-on-Panel Applications." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/50945142610067672523.

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博士<br>國立成功大學<br>微電子工程研究所碩博士班<br>98<br>Oxide-semiconductor-based thin-film transistors have advanced remarkably in recent years, providing an attractive alternative to silicon-based thin film transistors (TFTs). However, in order to operate these oxide TFTs at low bias voltage and high driving current, high-k gate dielectrics are needed to increase the capacitive coupling between the gate electrode and the channel active layer. In this thesis, firstly of all, we applied novel ternary high-k gate dielectric materials to enhance the performance of sputtered ZnO and InGaZnO thin-film transistors.

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16

Lin, Yu-Hsuan, and 林鈺軒. "The Study of InGaZnO Thin Film Transistors with Dual Treatment of Pre-oxidation ZrO2 High-ĸ Dielectric and Post-oxidation InGaZnO Channel by Neutral Beam System." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/wyh9jx.

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碩士<br>國立交通大學<br>工學院加速器光源科技與應用碩士學位學程<br>104<br>Amorphous InGaZnO (a-IGZO) Thin Film Transistor (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility, smaller subthreshold swing (SS) and better electrical characteristics. In this investigation, we used atmospheric-pressure PECVD (AP-PECVD) to deposit our IGZO active layer. With AP-PECVD, we could deposit IGZO thin film without vacuum system, thus, it could lower our cost, improved the throug

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