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Journal articles on the topic 'Film dielectric systems'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Wang, Wei Qiang, Jia Qi Niu, and Yan Su. "BaTiO₃/ Teflon Nanocomposite Ferroelectric Thin Films for Low Voltage Electrowetting Systems." Solid State Phenomena 281 (August 2018): 616–21. http://dx.doi.org/10.4028/www.scientific.net/ssp.281.616.

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We present a simple and cost effective method for the design and fabrication of electrowetting devices using a nanocomposite thin film of BaTiO3 and Teflon-AF as the dielectric layer to achieve low voltage operation. The nanocomposite film is prepared by using Teflon-AF as matrix and BaTiO3 nanoparticles as the filler material. The solution is spin coated to deposit thin film on metal electrodes. The characterization results show that the nanocomposite thin film can serve as the dielectric for EWOD with a high dielectric constant and a crack free hydrophobic film. To test the electrowetting ef

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2

Tan, Fei Hu, Hong Bin Zhao, Qing Meng Zhang, Feng Wei, and Jun Du. "Dielectric Performance of (Pb_1-xSr_x)Nb₂O₆-NaNbO₃ Thin Film Materials System: Substitution Effects." Materials Science Forum 898 (June 2017): 1699–704. http://dx.doi.org/10.4028/www.scientific.net/msf.898.1699.

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(Pb1-xSrx)Nb2O6-NaNbO3 (PSNN) dielectric thin films, x changed from 0.4 to 0.6, were deposited by pulsed laser deposition (PLD) technology on p+-Si substrate. Post-annealing was performed on the dielectric thin films at 800oC in oxygen atmosphere for 10 minutes. The Sr-composition dependence of the dielectric performance in this thin film materials system was investigated. The results indicated that dielectric constant changing with Sr-composition in the PSNN thin films showed the shape of a parabola, resulting from the morphotropic phase boundary (MPB) effect caused by the existence of both o

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3

Bagchi, A., and A. G. Evans. "Reply to the comments of O. Jørgensen et al." Journal of Materials Research 11, no. 8 (1996): 2111–12. http://dx.doi.org/10.1557/jmr.1996.0267.

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Large scale yielding (LSY), in general, has a profound influence on the fracture toughness of metal/dielectric interfaces. For thin metal film/dielectric systems exhibiting “weak” bonding, small-scale yielding (SSY) prevails due to local plastic dissipation intrinsic to crack growth and the high yield strength of metal thin films. For systems involving low yield strength materials and strong interfaces, a more detailed LSY methodology needs to be developed.

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4

Morris, Dylan J., and Robert F. Cook. "Indentation fracture of low-dielectric constant films: Part I. Experiments and observations." Journal of Materials Research 23, no. 9 (2008): 2429–42. http://dx.doi.org/10.1557/jmr.2008.0294.

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Advanced microelectronic interconnection structures will need dielectrics of low permittivity to reduce capacitive delays and crosstalk, but this reduction in permittivity typically necessitates an increase in the porosity of the material, which is frequently accompanied by reduced mechanical reliability. Failure by brittle fracture remains a typical manufacturing and reliability hurdle for this class of materials. Part I of this two-part work explores the instrumented indentation and indentation fracture responses of a variety of organosilicate low-dielectric constant (low-κ) films. Three dif

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5

Wang, Wei Qiang, Jia Qi Niu, Zhen Kun Xie, and Zhen Xing Yue. "Dielectric Breakdown and Failure of Ferroelectric Films as the Dielectric for Electrowetting Systems." Key Engineering Materials 697 (July 2016): 231–34. http://dx.doi.org/10.4028/www.scientific.net/kem.697.231.

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In this paper, we study the electrical properties and breakdown phenomena of PZT ferroelectric thin film in electrowetting systems. The experimental results indicate that irreversible charge trapping occurred with repeated voltage actuation, resulting in contact angle relaxation and reduction of the ferroelectric film breakdown strength. The breakdown voltage depends on DC voltage polarity, and this polarity dependence was found to be related to the thickness of the ferroelectric layer. When AC voltage was applied, the breakdown voltage increased directly with voltage frequency. These phenomen

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6

SKVORTSOV, A. A., S. M. ZUEV, M. V. KORYACHKO, and A. A. SKVORTSOVA. "THE EFFECT OF THIN DIELECTRIC LAYERS AT SILICON ON INTERCONNECTION HEATING DYNAMICS AT THERMAL SHOCKS." Periódico Tchê Química 16, no. 33 (2019): 448–56. http://dx.doi.org/10.52571/ptq.v16.n33.2019.463_periodico33_pgs_448_456.pdf.

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The relevance of the study is due to the fact that in the conditions of development of micro-and nanoelectronics, it is necessary to pay attention to resistive switching systems, which are the basis in the structures of these areas of electronics. The work deals with the investigation of the role of thin dielectric layers of silicon oxide and nitride on interconnection heating dynamics at monocrystalline silicon plates. The leading method to the study of this problem is the method of experiment, which allows identifying the features of the influence of the dielectric sublayer on the thermal re

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7

Chen, Fujia, Yu Shi, Jianfeng Li, Yuetao Zhao, Yajie Yang, and Jianhua Xu. "Fabrication of high energy storage density all-organic dielectric films by melt extrusion-melt stretching." Advances in Computer and Engineering Technology Research 1, no. 3 (2024): 404. http://dx.doi.org/10.61935/acetr.3.1.2024.p404.

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Organic polymer has great advantages and prospects in the field of electrostatic film capacitors and pulsed power systems. In this paper, composite films of Poly(vinylidene fluoride) (PVDF) and Poly(methyl methacrylate) (PMMA) were fabricated by twin-screw extrusion and melt stretching. PMMA with specific volume fractions was added as a composite phase into the PVDF matrix. As an all-organic dielectric film, the composite film (F/A) shows great performance in energy storage test. The composite film was highly compatible and combined the properties of both polymers. The dielectric constants of

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8

Zhang, Xuan, and Sung-Woon Cho. "Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability." Micromachines 15, no. 2 (2024): 193. http://dx.doi.org/10.3390/mi15020193.

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To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is composed of the same semiconductor film, gate dielectric/channel interface, and back channel, its electrical performance and operational stability are significantly affected by the thickness of the oxide semiconductor. In this study, solution process-based nanometer-scale thicknes

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9

Skettrup, Torben. "Three-layer approximation of dielectric thin film systems." Applied Optics 28, no. 14 (1989): 2860. http://dx.doi.org/10.1364/ao.28.002860.

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10

Wang, Wei Qiang, and Yan Su. "Polarity Effect and Dielectric Breakdown of Composite Ferroelectric Films as the Dielectric for Electrowetting Systems." Solid State Phenomena 281 (August 2018): 598–603. http://dx.doi.org/10.4028/www.scientific.net/ssp.281.598.

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In this paper, we study the electrical properties and breakdown phenomena of BaTiO3/Teflon composite ferroelectric thin film in electrowetting systems. The experimental results showed that the electrowetting effect and the breakdown voltage depend on DC voltage polarity, and this polarity dependence is closely related to the thickness of the ferroelectric film. Under AC voltages, the breakdown voltage increased directly with voltage frequency. These results are useful for designing reliable EWOD devices with low operation voltages and high robustness.

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11

Fang, Xuecong, Honglong Ning, Zihan Zhang, et al. "Preparation of High-Performance Transparent Al2O3 Dielectric Films via Self-Exothermic Reaction Based on Solution Method and Applications." Micromachines 15, no. 9 (2024): 1140. http://dx.doi.org/10.3390/mi15091140.

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As the competition intensifies in enhancing the integration and performance of integrated circuits, in accordance with the famous Moore’s Law, higher performance and smaller size requirements are imposed on the dielectric layers in electronic devices. Compared to vacuum methods, the production cost of preparing dielectric layers via solution methods is lower, and the preparation cycle is shorter. This paper utilizes a low-temperature self-exothermic reaction based on the solution method to prepare high-performance Al2O3 dielectric thin films that are compatible with flexible substrates. In thi

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12

Bhavsar, Vaishali, and Deepti Tripathi. "Tuning low frequency dielectric properties of flexible ternary polymer blend film reinforced with bio- ionic liquid for the application in green electronics." Zastita Materijala 65, no. 1 (2024): 158–68. http://dx.doi.org/10.62638/zasmat1001.

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Biofriendly conducting polymeric blends and composites exhibiting high dielectric constant and dielectric loss are promising for applications as sensors, actuators, microwave absorbing materials, fuel cells and biomedical applications. A great deal of work is reported on using fillers such as conductive nanomaterials, bio ceramics, carbon nanotubes, graphene etc in blends of Polyvinylchloride, Polyvinylpyrrolidone, Polymethylmethacrylate, Polyvinyl alcohol with conducting polymer Polypyrrole, Polyaniline for enhancing their conductivities, tailoring dielectric and electrical, thermal and surfa

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13

Dahl-Hansen, Runar Plünnecke, Marit Synnøve Sæverud Stange, Tor Olav Sunde, Johan Henrik Ræder, and Per Martin Rørvik. "On the Evolution of Stress and Microstructure in Radio Frequency-Sputtered Lead-Free (Ba,Ca)(Zr,Ti)O3 Thin Films." Actuators 13, no. 3 (2024): 115. http://dx.doi.org/10.3390/act13030115.

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Thin-film piezoelectrics are widely investigated for actuators and energy harvesters, but there are few alternatives to toxic lead zirconate titanate. Biocompatible Ca- and Zr-modified BaTiO3 (BCZT) is one of the most promising lead-free alternatives due to its high piezoelectric response. However, the dielectric/piezoelectric properties and structural integrity of BCZT films, which are crucial for their applications, are strongly influenced by the substrate upon which the film is grown and the related processing methods. Here, the in-plane stress, microstructure, dielectric, and piezoelectric

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14

Piao, Yu Hao, and Wei Qiang Wang. "Using Superhydrophobic SU-8 Film as the Dielectric for Electrowetting-on-Dielectric." Solid State Phenomena 281 (August 2018): 604–9. http://dx.doi.org/10.4028/www.scientific.net/ssp.281.604.

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In this paper, we study the electrowetting effect of superhydrophobic SU-8 film as the dielectric for Electrowetting-on-Dielectric (EWOD). The change of apparent contact angle (APCA) on superhydrophobic surface in electrowetting systems was measured and analyzed using a modified Lippmann-Yong equation. The variation of APCA between droplet and device surface under various DC voltage and AC voltage of different frequencies was fully experimented. The experimental results were in good agreement with the theoretical predictions. This study shows the potential of using superhydrophobic SU-8 film a

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15

Shadrin A. M., Noskova D. D., Pudonin F. A., Sherstnev I. A., and Boltaev A. P. "The effect of optical non-reciprocity in multilayer nanostructure systems based on Bi." Physics of the Solid State 65, no. 4 (2023): 623. http://dx.doi.org/10.21883/pss.2023.04.56005.550.

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In multilayer non-magnetic structures with island layers Bi ([Bi-Al2O3]N --- at room temperature, an abnormally large optical non-reciprocity effect was detected. It is shown that this effect can be closely related to the behavior of dielectric permittivity in Bi nanostructured layers. It is found that in these multilayer island systems, the metallic nature of the optical response of the dielectric constant (Re(ε)&lt;0) is observed &lt;0) in the optical range when the thickness of the dielectric layer of Al2O3 is less than 1.6 nm. It is assumed that the island systems [Bi-Al2O3]N exhib

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16

Tian, Wenchao, Fei Yan, Cailing Cai, et al. "Freeze-drying and hot-pressing strategy to embed two-dimensional Ti0.87O2 monolayers in commercial polypropylene films with enhanced dielectric properties." Journal of Advanced Ceramics 10, no. 2 (2021): 368–76. http://dx.doi.org/10.1007/s40145-020-0443-0.

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AbstractThe dielectric capacitor has been widely used in advanced electronic and electrical power systems due to its capability of ultrafast charging-discharging and ultrahigh power density. Nevertheless, its energy density is still limited by the low dielectric constant(≈ 2.2) of the commercial dielectric polypropylene (PP). The conventional enhancement strategy by embedding inorganic fillers in PP matrix is still difficult and challenging due to that PP hardly dissolves in any inorganic/organic solvent. In this work, we develop a new strategy including freeze-drying, surface functionalizatio

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17

Harooni, Mahsa, and Abbas Sadeghzadeh-Attar. "Enhanced dielectric properties and energy storage density of Mg-doped SrTiO3 nanowire films." Processing and Application of Ceramics 16, no. 1 (2022): 55–63. http://dx.doi.org/10.2298/pac2201055h.

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To improve dielectric properties of SrTiO3-based materials and meet their development requirements in various scientific and technology fields, Mg-doped SrTiO3 nanowire films (with 0, 0.5, 1, 1.5 and 2mol% Mg) were fabricated by liquid phase deposition (LPD) process. The results showed that structural and dielectric properties of the prepared samples can be effectively affected by Mg doping. Thus, the SrTiO3 nanowire film doped with 1.5mol% Mg has high dielectric constant of 594.2, a low dielectric loss of 0.0167 and the highest breakdown strength of 463.1 kV/cm at 1 kHz, therefore resulting i

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18

Faza, R. A., S. Chalimah, S. Sudarsono, and G. Yudoyono. "Preliminary Study of Resonance Systems States in Surface Plasmon Resonance Systems." Journal of Physics: Conference Series 2780, no. 1 (2024): 012037. http://dx.doi.org/10.1088/1742-6596/2780/1/012037.

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Abstract Resonance between light and collective electrons is known as Surface Plasmon Resonance or SPR. The development of SPR-based sensors can generate the use of a Kretschmann configuration prism. Otto configuration dielectric medium between prism and gold thin film. For the Kretschmann configuration, a gold thin film between the prism and dielectric medium. So, this research focuses on the use of the Kretschmann configuration in the SPR system because the setup of the half-cylindrical prism is less complicated than using the Otto configuration. In this research, we compare the reflectance

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19

Aryal, Anil, Adelaide Bradicich, Ethan T. Iverson, et al. "Thermal conductivity of multilayer polymer-nanocomposite thin films." Journal of Applied Physics 132, no. 19 (2022): 195104. http://dx.doi.org/10.1063/5.0102203.

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The development of electrical insulators that are thermally conducting is critical for thermal management applications in many advanced electronics and electrical devices. Here, we synthesized polymer nanocomposite (PNC) films composed of polymers [polyethylenimine, poly(vinylamine), poly(acrylic acid), and poly(ethylene oxide)] and dielectric fillers (montmorillonite clay and hexagonal boron nitride) by layer-by-layer technique. The cross-plane thermal conductivity [Formula: see text] of the film was measured by the 3ω method. The effect of various factors such as film growth, filler type, fi

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20

Shan, Feng, Yanyan Zhu, and Jingyi Huang. "Polarization-Dependent Plasmon Coupling in Gold Nanoparticles and Gold Thin-Film Systems." Coatings 14, no. 6 (2024): 746. http://dx.doi.org/10.3390/coatings14060746.

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The characteristics of gap plasmon formed by nanoparticle-on-mirror (NPOM) structures composed of metal nanoparticles (MNPs) and metal thin films have aroused interest for use in various optoelectronic devices. The resonance enhancement characteristics in the gap region of an NPOM structure composed of gold nanoparticles and gold thin films are simulated theoretically by the finite element method (FEM). The resonant spectrum obtained by the internal coupling effect of the gap can be flexibly controlled by the polarization of incident light and the thickness of the dielectric layer between the

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21

Chen, Zixuan, Ye Tian, Jingguo Zhu, et al. "Laser Damage Performance Study of Fundamental Frequency Dielectric Film Optical Elements." Crystals 13, no. 4 (2023): 571. http://dx.doi.org/10.3390/cryst13040571.

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In laser application systems, the optical film is one of the most important parts of the system, as well as its weakest link. Its damage performance determines the output characteristics and safety performance of the laser system. This paper focuses on the fundamental frequency reflection of dielectric films used in large high-powered laser devices. The study of the dielectric film’s initial laser damage performance and laser damage growth performance is carried out through laser damage testing and microscopic morphology testing of the damage. The results show two different damage morphologies

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22

Liu, Dapeng, Yiwei Zhao, Qianqian Shi, et al. "Organic synaptic devices based on ionic gel with reduced leakage current." Chemical Communications 57, no. 15 (2021): 1907–10. http://dx.doi.org/10.1039/d0cc07488h.

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23

Rahman, Md Mamunur, Jun-Gyu Kim, Dae-Hyun Kim, and Tae-Woo Kim. "Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition." Micromachines 10, no. 6 (2019): 361. http://dx.doi.org/10.3390/mi10060361.

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This study presents the characteristics of HfAlO films for a series of Al incorporation ratios into a HfO2 dielectric by atomic layer deposition on a Si substrate. A small amount of Al doping into the HfO2 film can stabilize the tetragonal phase of the HfO2, which helps to achieve a higher dielectric constant (k) and lower leakage current density, as well as a higher breakdown voltage than HfO2 film on its own. Moreover, assimilation of Al2O3 into HfO2 can reduce the hysteresis width and frequency dispersion. These are indications of border trap reduction, which was also verified by the border

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24

Smolko, Vitaly, and Elizaveta Antoshkina. "Measurement of Complex Dielectric Permittivity of Quartz Systems." Materials Science Forum 946 (February 2019): 129–33. http://dx.doi.org/10.4028/www.scientific.net/msf.946.129.

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The article describes the problem of the experimental determination of complex dielectric permittivity for natural, activated, and modified quartz systems. The results of determination of specific surface, complex dielectric permittivity, sands porosity are presented in this article. The authors obtained the empirical equation of complex dielectric permittivity calculation for natural, activated, and modified quartz sands, taking into account the effect of moisture, specific surface, porosity, impurities content into consideration. The modification of the sand surface by means of mechanical be

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25

Zyoud, Samer H., Wissal Jilani, Abdelfatteh Bouzidi, et al. "The Impact of Ammonium Fluoride on Structural, Absorbance Edge, and the Dielectric Properties of Polyvinyl Alcohol Films: Towards a Novel Analysis of the Optical Refractive Index, and CUT-OFF Laser Filters." Crystals 13, no. 3 (2023): 376. http://dx.doi.org/10.3390/cryst13030376.

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The new proton-conducting composite electrolyte films (PCCEFs) consisting of polyvinyl alcohol (PVA) with varying ammonium fluoride salt concentrations were created using an expanded liquid casting process. The X-ray diffraction (XRD) study confirms the composite electrolyte films (CEFs) formation. The improvement in AMF02 salt doping compared to the PVA matrix film approach resulted in decreased variation in the crystalline size values, thus explaining how [NH4+] and polymer PVA matrix films interact. The band gaps decrease when the AMF02 salt filler concentration increases due to increased c

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26

Zaghloul, Usama, George J. Papaioannou, Bharat Bhushan, Fabio Coccetti, Patrick Pons, and Robert Plana. "New insights into reliability of electrostatic capacitive RF MEMS switches." International Journal of Microwave and Wireless Technologies 3, no. 5 (2011): 571–86. http://dx.doi.org/10.1017/s1759078711000766.

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Among other reliability concerns, the dielectric charging is considered the major failure mechanism which hinders the commercialization of electrostatic capacitive radio frequency micro-electro-mechanical systems (RF MEMS) switches. In this study, Kelvin probe force microscopy (KPFM) surface potential measurements have been employed to study this phenomenon. Several novel KPFM-based characterization methods have been proposed to investigate the charging in bare dielectric films, metal–insulator–metal (MIM) capacitors, and MEMS switches, and the results from these methods have been correlated.

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27

Krüger, Tim Simon, Ozan Çabuk, and Jürgen Maas. "Manufacturing Process for Multilayer Dielectric Elastomer Transducers Based on Sheet-to-Sheet Lamination and Contactless Electrode Application." Actuators 12, no. 3 (2023): 95. http://dx.doi.org/10.3390/act12030095.

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Dielectric elastomer transducers (DETs) consist of thin elastomer films and compliant conductive electrodes on each side. Several DE-based systems, e.g., DE actuators, loudspeakers or sensors, have great potential in industrial applications. Different manufacturing processes for DE-based transducers have been realized so far. An alternative manufacturing process, based on sheet-to-sheet lamination of pre-fabricated elastomer films, appears promising for the manufacturing of large numbers of DETs, as, on the one hand, the commercially available elastomer films produced are characterized by homo

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28

Starostenko, Vladimir V., Evgeniy V. Grigoriev, Alim S. Mazinov, et al. "Heating dynamics of metal-dielectric structures with nanometer-thin conductive films under the influence of microwave fields." Radioelectronics. Nanosystems. Information Technologies. 14, no. 3 (2022): 243–48. http://dx.doi.org/10.17725/rensit.2022.14.243.

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The paper presents the results of experimental studies of the heating dynamics of metal-dielectric structures (MDS) with aluminum conductive nanoscale films deposited by magnetron sputtering on low-cost substrates (glass, sitall, PET and PTFE) under exposure to monochromatic ultrahigh frequency (UHF) fields in a waveguide. At film thicknesses less than 2 nm, the experimental samples had mostly dielectric properties. Noticeable interaction of the films with microwave, causing thermal phenomena, was observed at thicknesses greater than 2 nm and reached a maximum at 5 nm. Thermal degradation proc

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29

Du, Guoqiang, and Jie Zhang. "Capacitance Evaluation of Metallized Polypropylene Film Capacitors Considering Cumulative Self-Healing Damage." Electronics 13, no. 14 (2024): 2886. http://dx.doi.org/10.3390/electronics13142886.

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Self-healing (SH) in metallized polypropylene film capacitors (MPPFCs) can lead to irreversible damage to electrode and dielectric structures, resulting in capacitance loss and significant stability degradation, especially under cumulative SH conditions. To enhance the reliability assessment of MPPFCs post-SH, this study conducted SH experiments on MPPFCs, examined the damage patterns of the electrodes and dielectric films, and proposed a novel capacitance evaluation method for MPPFCs under cumulative SH conditions. The results reveal that with increasing SH voltage, the number of dielectric l

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WANG, J. T., F. TANG, W. D. BROWN, J. D. FAN, and K. LIAN. "STUDY OF PMN-PT THICK FILMS FABRICATED BY SPIN-COATING." International Journal of Modern Physics B 13, no. 29n31 (1999): 3774–77. http://dx.doi.org/10.1142/s0217979299003908.

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Having high dielectric constants and large mechanical strain, relaxor materials are attractive to the application of actuators in electromechanical systems and elements for large and bright display of optical image where the lower operation voltage and larger deformation are required. In this paper, we study the dielectric properties of 0.9PMN-0.1PT thick films fabricated by a spin coating method. The thick film is prepared for the application of large and bright display elements of an optical-image. In this application a layer of PMN-PT is filled in a mold. The thickness of the layer in the d

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Li, Ziwei, Hongmei Qin, Jinhui Song, et al. "Polyimide Nanodielectrics Doped with Ultralow Content of MgO Nanoparticles for High-Temperature Energy Storage." Polymers 14, no. 14 (2022): 2918. http://dx.doi.org/10.3390/polym14142918.

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Advanced polymer dielectrics with high energy density at elevated temperatures are highly desired to meet the requirements of modern electronic and electrical systems under harsh conditions. Herein, we report a novel polyimide/magnesium oxide (PI/MgO) nanodielectric that exhibits high energy storage density (Ue) and charge–discharge efficiency (η) along with excellent cycling stability at elevated temperatures. Benefiting from the large bandgap of MgO and the extended interchain spacing of PI, the composite films can simultaneously achieve high dielectric constant and high breakdown strength,

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Takeuchi, Ichiro, Robert Bruce van Dover, and Hideomi Koinuma. "Combinatorial Synthesis and Evaluation of Functional Inorganic Materials Using Thin-Film Techniques." MRS Bulletin 27, no. 4 (2002): 301–8. http://dx.doi.org/10.1557/mrs2002.97.

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AbstractNovel phases of functional inorganic chemical systems can be efficiently explored using high-throughput thin-film fabrication techniques coupled with rapid characterization schemes. High-throughput investigation of thin-film materials has already led to the discovery of new dielectric and magnetic materials. In this article, we review various high-throughput thin-film synthesis/evaluation techniques and discuss examples of exciting discoveries and new applications of combinatorial techniques.

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Osman, Zurina, Khairul Bahiyah Md Isa, Lisani Othman, and Norlida Kamarulzaman. "Studies of Ionic Conductivity and Dielectric Behavior in Polyacrylonitrile Based Solid Polymer Electrolytes." Defect and Diffusion Forum 312-315 (April 2011): 116–21. http://dx.doi.org/10.4028/www.scientific.net/ddf.312-315.116.

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The solid polymer electrolyte films consisting of polyacrylonitrile (PAN) as the host polymer, lithium triflate (LiCF3SO3) and sodium triflate (NaCF3SO3) as dopant salts were prepared by the solution cast technique. The pure PAN film was prepared as a reference. The films were characterized using a.c. impedance spectroscopy. At room temperature, the highest conductivity for the sample from the (PAN+LiCF3SO3) system and the (PAN+NaCF3SO3) system is 3.04 x 10-4 Scm-1 and 7.13 x 10-4 Scm-1, respectively. The temperature dependence of ionic conductivity for the highest conducting film from both sy

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Deka, Bipul, and Kyung-Hoon Cho. "BiFeO3-Based Relaxor Ferroelectrics for Energy Storage: Progress and Prospects." Materials 14, no. 23 (2021): 7188. http://dx.doi.org/10.3390/ma14237188.

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Dielectric capacitors have been widely studied because their electrostatic storage capacity is enormous, and they can deliver the stored energy in a very short time. Relaxor ferroelectrics-based dielectric capacitors have gained tremendous importance for the efficient storage of electrical energy. Relaxor ferroelectrics possess low dielectric loss, low remanent polarization, high saturation polarization, and high breakdown strength, which are the main parameters for energy storage. This article focuses on a timely review of the energy storage performance of BiFeO3-based relaxor ferroelectrics

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Ngoc Thao, Pham, Shinya Yoshida, and Shuji Tanaka. "Fabrication and Characterization of PZT Fibered-Epitaxial Thin Film on Si for Piezoelectric Micromachined Ultrasound Transducer." Micromachines 9, no. 9 (2018): 455. http://dx.doi.org/10.3390/mi9090455.

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This paper presents a fibered-epitaxial lead zirconate titanate (PZT) thin film with intermediate features between the monocrystalline and polycrystalline thin films for piezoelectric micromachined ultrasound transducer (pMUT). The grain boundaries confirmed by scanning electron microscopy, but it still maintained the in-plane epitaxial relationship found by X-ray diffraction analyses. The dielectric constant (εr33 = 500) was relatively high compared to those of the monocrystalline thin films, but was lower than those of conventional polycrystalline thin films near the morphotropic phase bound

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El-Molla, Sara, Andreas Albrecht, Engin Cagatay, et al. "Integration of a Thin Film PDMS-Based Capacitive Sensor for Tactile Sensing in an Electronic Skin." Journal of Sensors 2016 (2016): 1–7. http://dx.doi.org/10.1155/2016/1736169.

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We present a capacitive force sensor based on a polydimethylsiloxane (PDMS) film integrated into a printed circuit board (PCB) on a flexible substrate whose layout is defined by inkjet printing. The influence of the dielectric thickness on the sensor behavior is presented. The thinner PDMS film of about 45 μm shows a sensitivity of up to 3 pF/N but poorer dynamic response. The dielectrics with thicknesses above 200 μm show a significantly reduced sensitivity. The best compromise between sensitivity and dynamic response is found for PDMS film of about 100 μm, showing about 1.1 pF/N and less tha

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37

Lee, J. L., C. A. Weiss, R. A. Buhrman, and J. Silcox. "Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 796–97. http://dx.doi.org/10.1017/s0424820100171717.

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BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO fil

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38

Hay, Jennifer. "Measuring substrate-independent modulus of dielectric films by instrumented indentation." Journal of Materials Research 24, no. 3 (2009): 667–77. http://dx.doi.org/10.1557/jmr.2009.0132.

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Substrate influence is a common problem when using instrumented indentation (also known as nanoindentation) to evaluate the mechanical properties of thin films. In this work, finite element analysis was used to develop an ad hoc model that predicts the substrate influence when testing thin dielectric films on silicon. The model was evaluated experimentally using three sets of films that were nominally the same except for thickness. Using the model significantly reduced the measurement error for the thinnest films (<250 nm) by accurately accounting for the influence of the substrate. The mod

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39

Banshchikov A. G., Vexler M. I., Ivanov I.A., Illarionov Yu. Yu., Sokolov N. S., and Suturin S. M. "Calcium fluoride films with 2-10 nm thickness on Silicon-(111): growth, diagnostics, study of the through current transport." Semiconductors 56, no. 9 (2022): 670. http://dx.doi.org/10.21883/sc.2022.09.54133.9885.

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Epitaxial calcium fluoride (CaF2) layers with a nominal thickness up to 10 nm on the (111)-oriented Silicon (Si) are obtained. Surface topographies of the fluoride films are recorded and the current-voltage characteristics of the Au/CaF2/Si structures are studied. On a qualitative level, these structures exhibited all the features usual for metal-insulator-semiconductor systems. The current-voltage curves of the samples were reproduced by modeling considering a finite (0.1-1 nm) value of the standard thickness deviation of the dielectric CaF2 film. Keywords: calcium fluoride, thin films, MIS s

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40

MARKOSKI, BRANKO, JOVAN P. ŠETRAJČIĆ, MIROSLAVA PETREVSKA, and SINIŠA VUČENOVIĆ. "PERMITTIVITY IN PERTURBED MOLECULAR NANOFILMS." International Journal of Modern Physics B 26, no. 15 (2012): 1250078. http://dx.doi.org/10.1142/s0217979212500786.

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A microscopic theory of dielectric properties of thin molecular films, i.e., quasi 2D systems bounded by two surfaces parallel to XY planes was formulated. Harmonic exciton states were calculated using the method of two-time, retarded, temperature dependent Green's functions. It has been shown that two types of excitations can occur: bulk and surface exciton states. Analysis of the optical properties of these crystalline systems for low exciton concentration shows that the permittivity strongly depends on boundary parameters and the thickness of the film. Conditions for the appearance of local

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Wang, Wenwen, Jin Qian, Chaohui Geng, et al. "Flexible Lead-Free Ba0.5Sr0.5TiO3/0.4BiFeO3-0.6SrTiO3 Dielectric Film Capacitor with High Energy Storage Performance." Nanomaterials 11, no. 11 (2021): 3065. http://dx.doi.org/10.3390/nano11113065.

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Ferroelectric thin film capacitors have triggered great interest in pulsed power systems because of their high-power density and ultrafast charge–discharge speed, but less attention has been paid to the realization of flexible capacitors for wearable electronics and power systems. In this work, a flexible Ba0.5Sr0.5TiO3/0.4BiFeO3-0.6SrTiO3 thin film capacitor is synthesized on mica substrate. It possesses an energy storage density of Wrec ~ 62 J cm−3, combined with an efficiency of η ~ 74% due to the moderate breakdown strength (3000 kV cm−1) and the strong relaxor behavior. The energy storage

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42

Kisara, Katsuto, Kazuyuki Suzuki, Toichiro Ishikawa, Kazuhisa Fujita, and Hiroshi Masumoto. "Prototype Design and Evaluation of Lightweight Mirror and Wavelength Selective Filter for Space Solar Power Systems." Materials Science Forum 631-632 (October 2009): 519–24. http://dx.doi.org/10.4028/www.scientific.net/msf.631-632.519.

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The large scale SSPS (Space Solar Power System) needs large reflection mirrors for sunlight concentration. To use film mirror in space, the mirror must have lightweight structures and resistive to harsh space environment. The wavelength selective filter to avoid heat is a dielectric multilayer film which has FGM structure. In this article, we will report the development of a lightweight wavelength selective mirror and wavelength selection on the solar light excitation laser.

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43

Cho, Mun K., K. S. Kim, and Hyun M. Jang. "Preferential orientation and dielectric/pyroelectric properties of sol-gel-derived Pb(Mg, Zn)1/3Nb2/3O3 thin films." Journal of Materials Research 10, no. 10 (1995): 2631–41. http://dx.doi.org/10.1557/jmr.1995.2631.

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Thin films of Pb(Mg,Zn)1/3Nb2/3O3 (PMZN) were fabricated by spin casting the partially hydrolyzed Pb-Mg-Zn-Nb-O complex alkoxide sols on (111) Pt-coated MgO(100) planes. Analysis of the isothermal transformation data indicated that the growth of perovskite grains from the pyrochlore matrix is a diffusion-controlled process with an initial fast nucleation. The effect of water concentration in the sol on the preferential orientation of perovskite grains in the corresponding thin film was examined. A strong preferential orientation of (100) perovskite was obtained in the PMZN thin film derived fr

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Zhu, Wenfu, Wei Zhao, Jiaqian Kang, et al. "Ultralow contents of AgNbO₃ fibers induced high energy storage density in ferroelectric polymer nanocomposites." Applied Physics Letters 120, no. 22 (2022): 223904. http://dx.doi.org/10.1063/5.0094131.

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Polymer dielectric films have been widely used in electronic and power systems due to their unique dielectric properties, processing properties, and excellent cost performance. Although the dielectric constant of dielectric polymers can be improved by adding high contents of ceramic fillers, this approach comes at the expense of the breakdown strength ( Eb). This work is inspired by the idea that high-aspect-ratio fibers can induce a larger electric dipole moment without sacrificing too much Eb compared to zero-dimensional nanoparticles, thereby effectively improving the energy storage perform

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Hasegawa, Masatoshi, Taro Fukuda, and Junichi Ishii. "Poly(ester imide)s with Low Linear Coefficients of Thermal Expansion and Low Water Uptake (VII): A Strategy to Achieve Ultra-Low Dissipation Factors at 10 GHz." Polymers 16, no. 5 (2024): 653. http://dx.doi.org/10.3390/polym16050653.

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In this study, a series of ester-linked tetracarboxylic dianhydrides (TCDAs) with 2,6-naphthalene-containing longitudinally extended structures consisting of different numbers of aromatic rings (NAr = 6–8) was synthesized to obtain novel modified polyimides, poly(ester imide)s (PEsIs). These TCDAs were fully compatible with the conventional manufacturing processes of conventional polyimide (PI) systems. As an example, the PEsI film obtained from the ester-linked TCDA (NAr = 8) and an ester-linked diamine achieved unprecedented outstanding dielectric properties without the support of fluorinate

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46

Barman, Jitesh, Wan Shao, Biao Tang, Dong Yuan, Jan Groenewold, and Guofu Zhou. "Wettability Manipulation by Interface-Localized Liquid Dielectrophoresis: Fundamentals and Applications." Micromachines 10, no. 5 (2019): 329. http://dx.doi.org/10.3390/mi10050329.

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Electric field-based smart wetting manipulation is one of the extensively used techniques in modern surface science and engineering, especially in microfluidics and optofluidics applications. Liquid dielectrophoresis (LDEP) is a technique involving the manipulation of dielectric liquid motion via the polarization effect using a non-homogeneous electric field. The LDEP technique was mainly dedicated to the actuation of dielectric and aqueous liquids in microfluidics systems. Recently, a new concept called dielectrowetting was demonstrated by which the wettability of a dielectric liquid droplet

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47

SUGAHANA, MASANORI, and NIKOLAI N. BOGOLUBOV. "QUANTUM INTERFERENCE OF ELECTRON SYSTEM IN 2D NETWORK OF CIRCULAR MOLECULAR ORBITS." Modern Physics Letters B 16, no. 10n11 (2002): 363–73. http://dx.doi.org/10.1142/s0217984902003877.

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Our theoretical study reports on the quantum interference effect expected to be found in the correlated state of the hole-doped electron system in 2D networks of circular molecular orbits, where the ground state of the system is described by a FQHE-like state. When the phase-correlation length λΘ is larger than the incompressibility length λQ, the system of tunneling-coupled 2 FQHE-like states shows the interference of the Josephson effect. On the other hand, when λQ > λΘ, the system shows a dielectric interference effect analogous to the superconductor junction. In the film crystal of a mu

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Банщиков, А. Г., М. И. Векслер, И. А. Иванов, Ю. Ю. Илларионов, Н. С. Соколов та С. М. Сутурин. "Пленки фторида кальция толщиной 2-10 нм на кремнии-(111): выращивание, диагностика, изучение сквозного токопереноса". Физика и техника полупроводников 56, № 9 (2022): 888. http://dx.doi.org/10.21883/ftp.2022.09.53410.9885.

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Epitaxial calcium fluoride (CaF2) layers with a nominal thickness up to 10 nm on the (111)-oriented Silicon (Si) are obtained. Surface topographies of the fluoride films are recorded and the current-voltage characteristics of the Au/CaF2/Si structures are studied. On a qualitative level, these structures exhibited all the features usual for metal-insulator-semiconductor systems. The current-voltage curves of the samples were reproduced by modeling considering a finite (0.1–1 nm) value of the standard thickness deviation of the dielectric CaF2 film.

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49

Shamparov E. Yu. "Fully absorbing one-dimensional photonic crystal." Optics and Spectroscopy 130, no. 8 (2022): 935. http://dx.doi.org/10.21883/eos.2022.08.54765.2907-22.

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We investigated the resonant absorption capacity of a one-dimensional photonic crystal, the relationship between the resonant frequency and the width of its absorption band, and the composition and thickness of the layers forming it. Frequency oscillations of radiation reflection from 2.5-layer semimetal-dielectric-metal film structures caused by interference on the film thickness were studied. We measured the infrared reflection spectra of Bi87Sb13 film samples on mirror-smooth substrates with a reflective metal (Al, Ti) layer and a dielectric layer MgF2+LiF or SiO2+Si3N4). We have developed

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50

Chupis, I. E. "Linear magnetoelectric effect in a two-layer ferroelectric–ferromagnetic system." Soviet Journal of Low Temperature Physics 18, no. 10 (1992): 785–87. https://doi.org/10.1063/10.0033293.

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Surface linear magnetoelectic effect (LMEE) is studied in semi-infinite ferroelectric-ferromagnet and semi-infinite ferroelectric-ferromagnetic film contact systems. It is shown that the value of LMEE increases on the contact surface in direct proportion to the dielectric susceptibility of the ferroelectric.

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