Relevant bibliographies by topics / Films of Cubic-GaN

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  3. Conference papers

Academic literature on the topic 'Films of Cubic-GaN'

Author: Grafiati
Published: 28 May 2022
Last updated: 31 July 2025

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Journal articles on the topic "Films of Cubic-GaN"

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SUWANNAHARN, Nattamon, Sakuntam SANORPIM, Suphakan KIJAMNAJSUK, Visittapong YORDSRI, Noppadon NUNTAWONG, and Kentaro ONABE. "Effect of Al Addition on Crystal Structure of AlGaN/GaN on GaAs (001) Substrate Grown by Metalorganic Vapor Phase Epitaxy." Journal of Metals, Materials and Minerals 32, no. 1 (2022): 41–47. http://dx.doi.org/10.55713/jmmm.v32i1.1240.

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Effects of Al addition on a structural phase modification in AlGaN/GaN films on GaAs substrate grown by MOVPE have been investigated. To examine the effect of Al addition, AlGaN/GaN films were grown with varied a molar flow ratio of TMAl to the total group-III elements of 0, 0.15, and 0.30. Quantity of hexagonal phase incorporation was evaluated by the ratios of integrated XRD intensity of hexagonal plane to cubic plane from reciprocal space mappings. The diffraction geometry factor was considered in the calculation. The results suggest that GaN primarily contains a hexagonal phase with a smal
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Oktyabrsky, S., K. Dovidenko, A. K. Sharma, V. Joshkin, and J. Narayan. "CRYSTAL STRUCTURE AND DEFECTS IN NITROGEN-DEFICIENT GaN." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 709–14. http://dx.doi.org/10.1557/s109257830000329x.

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We have studied crystal structure and associated defects in GaN films grown on sapphire under nitrogen-deficient conditions by metalorganic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD). The structural quality of the PLD films grown at 750 °C was comparable with those grown by MOCVD at 1050 °C having threading dislocations density of about 1010 cm−2 at a film thickness 150-200 nm. Microstructure of the PLD films grown at temperatures above 780°C was found to be similar to that of nitrogen-deficient MOCVD films indicating the loss of nitrogen due to thermal decomposition o
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Goswami, Ramasis, Syed Qadri, Neeraj Nepal, and Charles Eddy. "Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures." Coatings 11, no. 4 (2021): 482. http://dx.doi.org/10.3390/coatings11040482.

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We demonstrate the growth of ultra-thin AlN films on Si (111) and on a GaN/sapphire (0001) substrate using atomic layer epitaxy in the temperature range of 360 to 420 °C. Transmission electron microscopy and X-ray diffraction were used to characterize the interfaces, fine scale microstructure, and the crystalline quality of thin films. Films were deposited epitaxily on Si (111) with a hexagonal structure, while on the GaN/sapphire (0001) substrate, the AlN film is epitaxial and has been deposited in a metastable zinc-blende cubic phase. Transmission electron microscopy reveals that the interfa
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Li, J. B., Hui Yang, L. X. Zheng, D. P. Xu, and Y. T. Wang. "Cubic InGaN Grown by MOCVD." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 239–43. http://dx.doi.org/10.1557/s1092578300002520.

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We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL pea
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Kim, Chong Cook, Jung Ho Je, Min-Su Yi, and Do Young Noh. "Structural evolution of GaN during initial stage MOCVD growth." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 252–58. http://dx.doi.org/10.1557/s109257830000435x.

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The structural evolution of GaN films during the initial growth process of metalorganic chemical vapor deposition (MOCVD) - low temperature nucleation layer growth, annealing, and high temperature epitaxial growth - was investigated in a synchrotron x-ray scattering experiment. The nucleation layer grown at 560°C that was predominantly cubic GaN consisted of tensile-strained aligned domains and relaxed misaligned domains. The hexagonal GaN, transformed from the cubic GaN during annealing to 1100 °C, showed disordered stacking. The atomic layer spacing decreased as the fraction of the hexagonal
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Binks, D. J., P. Dawson, R. A. Oliver, and D. J. Wallis. "Cubic GaN and InGaN/GaN quantum wells." Applied Physics Reviews 9, no. 4 (2022): 041309. http://dx.doi.org/10.1063/5.0097558.

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LEDs based on hexagonal InGaN/GaN quantum wells are dominant technology for many lighting applications. However, their luminous efficacy for green and amber emission and at high drive currents remains limited. Growing quantum wells instead in the cubic phase is a promising alternative because, compared to hexagonal GaN, it benefits from a reduced bandgap and is free of the strong polarization fields that can reduce the radiative recombination rate. Initial attempts to grow cubic GaN in the 1990s employed molecular beam epitaxy, but now, metal-organic chemical vapor deposition can also be used.
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Bentoumi, G., A. Deneuville, E. Bustarret, B. Daudin, and G. Feuillet. "Strain in cubic GaN films versus residual hexagonal GaN content." Thin Solid Films 364, no. 1-2 (2000): 114–18. http://dx.doi.org/10.1016/s0040-6090(99)00954-2.

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Zhang, Chun Guang. "Substrates Effect on the Phase Transition of GaN Thin Films by Sputter Deposition." Materials Science Forum 971 (September 2019): 79–84. http://dx.doi.org/10.4028/www.scientific.net/msf.971.79.

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As a promising third generation semiconductor material, gallium nitride (GaN) has become a research hotspot in optoelectronic field nowadays. In this paper, GaN thin films were grown by radio frequency (RF) planar magnetron sputtering of a powder GaN target in a pure nitrogen atmosphere at (0.2 – 2.0) Pa, (10 - 100) W onto various substrates such as GaAs (100), Si (100), Si (111), Al2O3(0001) and glass without any buffer layer. A clear phase transition from the metastable cubic zinc-blende (c - ZB) to the stable hexagonal wurtzite (h - WZ) dependence on substrates has been found in the GaN thi
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Fathy, Marwa, Sara Gad, Badawi Anis, and Abd El-Hady B. Kashyout. "Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films." Micromachines 12, no. 10 (2021): 1240. http://dx.doi.org/10.3390/mi12101240.

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In this study, we investigate a novel simple methodology to synthesize gallium nitride nanoparticles (GaN) that could be used as an active layer in light-emitting diode (LED) devices by combining the crystal growth technique with thermal vacuum evaporation. The characterizations of structural and optical properties are carried out with different techniques to investigate the main featured properties of GaN bulk alloys and their thin films. Field emission scanning electron microscopy (FESEM) delivered images in bulk structures that show micro rods with an average diameter of 0.98 µm, while thei
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Cordier, Yvon, Marc Portail, Sébastien Chenot, Olivier Tottereau, Marcin Zielinski, and Thierry Chassagne. "Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates." Materials Science Forum 600-603 (September 2008): 1277–80. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1277.

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Cubic SiC/Si (111) template is an interesting alternative for growing GaN on silicon. As compared with silicon, this substrate allows reducing the stress in GaN films due to both lower lattice and thermal expansion coefficient mismatch, and can provide better heat dissipation. In this work, we first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these films. Both the structural quality and the electrical behavior of these structures show the feasibili
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Dissertations / Theses on the topic "Films of Cubic-GaN"

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Zbyryn, E. M. "Properties of GaN Films Obtained by Nitridation of Porous GaP (001)." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/34882.

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With the help of nitridation of porous GaP (001) in nitrogen plasma thin films of cubic-GaN were obtained. The conclusion was made that the quality of the GaN films is dependent on the degree of porosity of the GaP substrate. XPS spectra were used to investigate the chemical composition of porous GaP substrates, obtained by electrochemical etching. From XPS measurement we determined that the annealing in atomic nitrogen leads to the formation of GaN films. X-ray diffraction measurements show that cubic GaN on porous GaP substrate has no tensile strain When you are citing the document, use
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Sung, Li-Wei, and 宋立偉. "The Study on Cubic GaN Film and InGaAsN Lasers Grown by Gas Source Molecular Beam Epitaxy and Simulation of Carrier Recombination Processes in Laser Diode." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/78088799091894979154.

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博士<br>國立臺灣大學<br>電機工程學研究所<br>92<br>In this dissertation, we report the plasma-assisted gas-source molecular-beam epitaxial growth of cubic GaN film and InGaAsN quantum-well (QW) lasers. We firstly present the study on the growth and characterization of cubic GaN films on GaAs substrate. It was found that the V/III ratio during the epitaxial growth must be kept at the lowest possible level that still can prevent the formation of Ga droplet on the surface. The condition can enhance the surface migration of Ga atoms and thus greatly improve the optical quality. After further optimizing the growth
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Conference papers on the topic "Films of Cubic-GaN"

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Vilchis, H., V. M. Sanchez-R, and A. Escobosa. "Structural studies of cubic GaN films grown by MOCVD." In 2012 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS). IEEE, 2012. http://dx.doi.org/10.1109/iccdcs.2012.6188897.

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CHICHIBU, Shigefusa, Hajime OKUMURA, Guy FEUILLET, Shuji NAKAMURA, and Sadafumi YOSHIDA. "Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films." In 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.c-2-3.

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Ploog, Klaus H., Oliver Brandt, B. Yang, H. Yang, and Achim Trampert. "Growth and doping of cubic GaN films for optoelectronic devices." In Optoelectronics and High-Power Lasers & Applications, edited by Marek Osinski, Peter Blood, and Akira Ishibashi. SPIE, 1998. http://dx.doi.org/10.1117/12.316639.

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Ohsato, Hitoshi, and Manijeh Razeghi. "Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates." In Photonics West '97, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1997. http://dx.doi.org/10.1117/12.271199.

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Gao, C., C. Dong, J. Herfort, O. Brandt, C. Jia, and D. Xue. "Measurement of the cubic anisotropy constant K3 of Fe films on GaN{0001}." In 2015 IEEE International Magnetics Conference (INTERMAG). IEEE, 2015. http://dx.doi.org/10.1109/intmag.2015.7157635.

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Journal articles
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