Relevant bibliographies by topics / Forte permittivité

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Forte permittivité'

Author: Grafiati
Published: 4 June 2021
Last updated: 12 February 2022

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Journal articles on the topic "Forte permittivité"

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Давлеткильдеев, Н. А., Д. В. Соколов, Е. Ю. Мосур, А. А. Лопандина та В. В. Болотов. "Применение электростатической силовой микроскопии для определения статической диэлектрической проницаемости индивидуальных молекул гемоглобина". Письма в журнал технической физики 45, № 19 (2019): 25. http://dx.doi.org/10.21883/pjtf.2019.19.48313.17827.

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The technique for determination the dielectric permittivity of individual hemoglobin molecules based on modeling the profiles of their images obtained by electrostatic force microscopy is presented. The obtained values of static dielectric permittivity are in agreement with the literature data. The proposed technique can be adapted to determination the dielectric characteristics of individual molecules of various proteins.
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Yazawa, Aki, Takuya Hoshina, Hirofumi Kakemoto, Takaaki Tsurumi, and Satoshi Wada. "Preparation and Dielectric Properties of 3D Barium Titanate Colloidal Sphere Array." Key Engineering Materials 320 (September 2006): 127–30. http://dx.doi.org/10.4028/www.scientific.net/kem.320.127.

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Barium titanate (BaTiO3) colloidal sphere array was prepared by meniscus method using capillary force between particles from slurry. To pack particles closely, well-dispersed slurry was obtained using electric double layer. From SEM observation, it was confirmed that the colloidal sphere array had point contact or plane contact. Dielectric permittivity of prepared colloidal sphere array was measured at 1 MHz by impedance analyzer. An obtained sample with point contact showed about the same dielectric permittivity as that of simulation by finite element method (FEM) using closed packed model. H
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Bo, TONG, ZHAO Minji, TOKU Yuhki, MORITA Yasuyuki, and JU Yang. "Local Permittivity Evaluation Based on the Force Variation of Microwave Atomic Force Microscopy." Proceedings of The Computational Mechanics Conference 2017.30 (2017): 340. http://dx.doi.org/10.1299/jsmecmd.2017.30.340.

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Luo, Tianhuan, Bo Li, Qian Zhao, and Ji Zhou. "Dielectric Behavior of Low Microwave Loss Unit Cell for All Dielectric Metamaterial." International Journal of Antennas and Propagation 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/291234.

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With a deep study of the metamaterial, its unit cells have been widely extended from metals to dielectrics. The dielectric based unit cells attract much attention because of the advantage of easy preparation, tunability, and higher frequency response, and so forth. Using the conventional solid state method, we prepared a kind of incipient ferroelectrics (calcium titanate, CaTiO3) with higher microwave permittivity and lower loss, which can be successfully used to construct metamaterials. The temperature and frequency dependence of dielectric constant are also measured under different sintering
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Chen, Jun, Kaikai Li, and Xiao Li. "Influence of permittivity on gradient force exerted on Mie spheres." Journal of the Optical Society of America A 35, no. 4 (2018): 553. http://dx.doi.org/10.1364/josaa.35.000553.

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Biagi, Maria Chiara, Giorgio Badino, Rene Fabregas, Georg Gramse, Laura Fumagalli, and Gabriel Gomila. "Direct mapping of the electric permittivity of heterogeneous non-planar thin films at gigahertz frequencies by scanning microwave microscopy." Physical Chemistry Chemical Physics 19, no. 5 (2017): 3884–93. http://dx.doi.org/10.1039/c6cp08215g.

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Bajac, Branimir, Jelena Vukmirovic, Djordjije Tripkovic, et al. "Structural characterization and dielectric properties of BaTiO3 thin films obtained by spin coating." Processing and Application of Ceramics 8, no. 4 (2014): 219–24. http://dx.doi.org/10.2298/pac1404219b.

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Barium titanate thin films were prepared by spin coating deposition technique of an acetic precursor sol and sintered at 750, 900 and 1050?C. Phase composition of the obtained thin films was characterized by X-ray diffraction and Raman spectroscopy. Their morphology was analysed by scanning electron microscopy and atomic force microscopy. Dielectric properties of thin films sintered at 750 and 900 ?C were characterized by LCD device, where the influence of sintering temperature on dielectric permittivity and loss tangent was inspected. It was concluded that higher sintering temperature increas
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Geyer, B., G. L. Klimchitskaya, and V. M. Mostepanenko. "Generalized plasma-like permittivity and thermal Casimir force between real metals." Journal of Physics A: Mathematical and Theoretical 40, no. 44 (2007): 13485–99. http://dx.doi.org/10.1088/1751-8113/40/44/025.

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BANISHEV, A. A., C. C. CHANG, R. CASTILLO-GARZA, G. L. KLIMCHITSKAYA, V. M. MOSTEPANENKO, and U. MOHIDEEN. "OBSERVATION OF REDUCTION IN CASIMIR FORCE WITHOUT CHANGE OF DIELECTRIC PERMITTIVITY." International Journal of Modern Physics A 27, no. 15 (2012): 1260001. http://dx.doi.org/10.1142/s0217751x12600019.

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Additional information is provided on the effect of the significant (up to 35%) reduction in the magnitude of the Casimir force between an Au -coated sphere and an indium tin oxide film which was observed after UV treatment of the latter. A striking feature of this effect is that the reduction is not accompanied with a corresponding variation of the dielectric permittivity, as confirmed by direct ellipsometry measurements. The measurement data are compared with computations using the Lifshitz theory. It is shown that the data for the untreated sample are in a very good agreement with theory ta
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BANISHEV, A. A., C. C. CHANG, R. CASTILLO-GARZA, G. L. KLIMCHITSKAYA, V. M. MOSTEPANENKO, and U. MOHIDEEN. "OBSERVATION OF REDUCTION IN CASIMIR FORCE WITHOUT CHANGE OF DIELECTRIC PERMITTIVITY." International Journal of Modern Physics: Conference Series 14 (January 2012): 1–15. http://dx.doi.org/10.1142/s2010194512007192.

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Additional information is provided on the effect of the significant (up to 35%) reduction in the magnitude of the Casimir force between an Au-coated sphere and an indium tin oxide film which was observed after UV treatment of the latter. A striking feature of this effect is that the reduction is not accompanied with a corresponding variation of the dielectric permittivity, as confirmed by direct ellipsometry measurements. The measurement data are compared with computations using the Lifshitz theory. It is shown that the data for the untreated sample are in a very good agreement with theory tak
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Dissertations / Theses on the topic "Forte permittivité"

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Garello, Kevin. "Matériaux magnéto-diélectriques en couches minces à forte perméabilité et à forte permittivité pour les applications microondes." Limoges, 2009. https://aurore.unilim.fr/theses/nxfile/default/40362767-dd75-4724-8290-dda5087628e2/blobholder:0/2009LIMO4054.pdf.

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Le travail a porté sur l'élaboration d'hétérostructures magnéto-diélectriques polycristallines en couches minces pour les applications radiofréquences. Le résultat marquant est l'obtention d'une compatibilité en température de procédé de la phase pérovskite du SrTiO3 des électrodes magnétiques du type FeCo/NiMn. Un tel matériau associe artificiellement une très forte permittivité (εr=100) et une très forte perméabilité( µr=200) qui permet de comprimer la longueur d'onde d'un signal radioélectrique, avec ici un caractère faiblement dissipatif jusqu'à 10 GHz environ. Ceci constitue une première
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Busani, Tito. "Elaboration et caractérisation de quelques diélectriques à forte permittivité avec application en microélectronique." Université Joseph Fourier (Grenoble), 2006. http://www.theses.fr/2006GRE10093.

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Durant les dernières décades, les activités de l'industrie de la microélectronique, et ainsi la recherche en microélectronique, ont été guidées par la loi de Moore. Cela a conduit à une réduction importante des dimensions fondamentales des transistors. Pour certains procédés, la dimension des matériaux a rejoint l'échelle atomique, avec les problèmes de fabrication et de fiabilité que cela entraîne. Ainsi l'oxyde de grille est-il prévu d'être constitué de 0. 6 nm de SiO2 en 2013. A de telles épaisseurs l'oxyde fuit considérablement lorsqu'un champ électrique est appliqué sur la grille, avec po
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Guiraud, Alexandre. "Intégration de matériaux à forte permittivité diélectrique dans les mémoires non volatile avancées." Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4763/document.

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Ce travail de thèse porte sur l'intégration de matériaux de haute constante diélectrique (High-k) en tant que diélectrique interpoly dans les mémoires non volatiles de type Flash. L'objectif est de déterminer quel matériaux High-k seraient des candidats probables au remplacement de l'empilement ONO utilisé en tant que diélectrique interpoly. Une gamme de matériaux high-k ont été étudiés via des caractérisations électriques (I-V, C-V, statistique de claquage…) et physiques (TEM, EDX, XPS…) afin d'éliminer les matériaux ne répondant pas au cahier des charges d'un diélectrique interpoly. Les diff
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Chang, Youjean. "Etude de caractérisation de matériaux diélectriques de grille à forte permittivité pour les technologies CMOS ultimes." Lyon, INSA, 2003. http://theses.insa-lyon.fr/publication/2003ISAL0035/these.pdf.

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Le travail présenté dans ce manuscrit concerne l'étude de nouveaux matériaux diélectriques à forte permittivité ("high-k") en vue de leur intégration comme isolant de grille dans les technologies CMOS ultimes. En effet, la miniaturisation agressive des dispositifs microélectroniques se heurte aujourd'hui aux limites du SiO2 et imposera à échéance de 2 ou 3 ans, son remplacement par un isolant à constante diélectrique plus élevée, ce qui constitue une véritable rupture technologique. Parmi les matériaux candidats les plus prometteurs, Al2O3 ("modeste-k"), HfO2 ("high-k") et SrTiO3 ("very high-k
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Gaillard, Sébastien. "Elaboration d'oxydes à forte constante diélectrique sur silicium par épitaxie par jets moléculaires." Ecully, Ecole centrale de Lyon, 2005. http://bibli.ec-lyon.fr/exl-doc/sgaillard.pdf.

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Le remplacement des oxydes de grille en SiO2 par des oxydes à plus forte constante diélectrique (high k) est inéluctable pour les technologies CMOS sub 50 nm, notamment pour les circuits à basse consommation d'énergie. Il s'agit dans ce projet de développer une technologie de fabrication de films minces d'oxydes monocristallins, à forte constante diélectrique, épitaxiés sur silicium, qui pourrait prendre le relais des technologies à base de films amorphes comme HfO2, dans les futures filières 45 nm ou 32 nm. La technique d'épitaxie choisie est l'épitaxie par jets moléculaires qui présente l'in
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Boujamaa, Rachid. "Caractérisations physico-chimiques et électriques d’empilements de couches d’oxyde à forte permittivité (high-k) / grille métallique pour l’ajustement du travail effectif de la grille : application aux nouvelles générations de transistors." Thesis, Grenoble, 2013. http://www.theses.fr/2013GRENT100.

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Cette thèse s'inscrit dans le cadre du développement des technologies CMOS 32/28nm chez STMicroelectronics. Elle porte sur l'étude d'empilements de grille métal/diélectrique high-k élaborés selon une stratégie d'intégration Gate First, où le couple TiN/HfSiON est introduit avec une couche interfaciale SiON et une encapsulation de la grille TiN par du polysilicium. Cette étude s'est principalement focalisée sur l'analyse des interactions entre les différentes couches constituant les empilements, en particulier des additifs lanthane et aluminium, employés pour moduler la tension de seuil Vth des
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Delhaye, Gabriel. "Oxydes cristallins à haute permittivité diélectrique épitaxiés sur silicium : SrO et SrTiO3." Ecully, Ecole centrale de Lyon, 2006. http://bibli.ec-lyon.fr/exl-doc/gdelhaye.pdf.

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L’étude de la croissance épitaxiale d’oxydes cristallins sur silicium présente un grand intérêt pour les technologies CMOS du futur ou l’intégration monolithique sur Si : la miniaturisation continue des composants de la microélectronique devrait conduire, pour les nœuds technologiques sub-22 nm, au remplacement de la silice comme oxyde de grille par des oxydes cristallins à haute permittivité diélectrique afin de limiter les fuites par effet tunnel. La maîtrise de la croissance d'oxydes cristallins doit aussi permettre l'intégration sur silicium d’oxydes fonctionnels à propriétés ferroélectriq
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Devoivre, Thierry. "Impact des diélectriques à forte permittivité sur les performances des transistors MOS 0. 13 µm avancés." Grenoble INPG, 2000. http://www.theses.fr/2000INPG0039.

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Le courant tunnel des oxydes hyperfins est un des problemes les plus preoccupants pour la microelectronique d'aujourd'hui car il limite fondamentalement la reduction des dimensions du transistor, aux frontieres des generations 0. 1m. Une rupture technologique et l'adoption d'un dielectrique alternatif a forte permittivite comme le ta 2o 5 semblent donc necessaire. Cependant, les specifications des filieres cmos pour une telle integration sont severes (densite d'etats d'interface, mobilite interfaciale, niveau de courant de fuite, etc. ). Dans ce memoire, nous nous sommes attaches a etudier le
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Barbier, Bertrand. "Elaboration et caractérisation de condensateurs à base de CaCu3Ti4O12 à forte permittivité relative pour l'électronique de puissance." Toulouse 3, 2009. http://thesesups.ups-tlse.fr/547/.

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Les céramiques massives issues de poudres de CaCu3Ti4O12 (CCTO) élaborées par co-précipitation suivie d'un traitement de calcination présentent des permittivités relatives colossales (150 000 à 1 kHz, Tamb), qui dépendent du taux de phase additionnelle CuO. L'étude confirme que le modèle de barrière interne est à l'origine de ces permittivités relatives. Par ailleurs, les caractérisations en tension et en impédance ont permis d'établir un modèle comportemental grâce à un circuit électrique équivalent facilement utilisable lors de simulations. Une étude originale a été menée sur des couches de
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Mastail, Cedric. "Modélisation et simulation du dépôt des oxydes à forte permittivité par la technique du Monte-Carlo cinétique." Phd thesis, Université Paul Sabatier - Toulouse III, 2009. http://tel.archives-ouvertes.fr/tel-00541993.

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Miniaturiser les composants impose des changements radicaux pour l'élaboration des dispositifs micro électroniques du futur. Dans ce cadre, les oxydes de grille MOS atteignent des épaisseurs limites qui les rendent perméables aux courants de fuite. Une solution est de remplacer le SiO2 par un matériau de permittivité plus élevée permettant l'utilisation de couches plus épaisses pour des performances comparables. Dans ce travail nous présentons une modélisation multi-échelle de la croissance par couche atomique (ALD) d'HfO2 sur Si permettant de relier la nano-structuration d'une interface au pr
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Book chapters on the topic "Forte permittivité"

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Newnham, Robert E. "Magnetic phenomena." In Properties of Materials. Oxford University Press, 2004. http://dx.doi.org/10.1093/oso/9780198520757.003.0016.

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In this chapter we deal with a number of magnetic properties and their directional dependence: pyromagnetism, magnetic susceptibility, magnetoelectricity, and piezomagnetism. In the course of dealing with these properties, two new ideas are introduced: magnetic symmetry and axial tensors. Moving electric charge generates magnetic fields and magnetization. Macroscopically, an electric current i flowing in a coil of n turns per meter produces a magnetic field H = ni amperes/meter [A/m]. On the atomic scale, magnetization arises from unpaired electron spins and unbalanced electronic orbital motion. The weber [Wb] is the basic unit of magnetic charge m. The force between two magnetic charges m1 and m2 is where r is the separation distance and μ0 (=4π×10−7 H/m) is the permeability of vacuum. In a magnetic field H, magnetic charge experiences a force F = mH [N]. North and south poles (magnetic charges) separated by a distance r create magnetic dipole moments mr [Wb m]. Magnetic dipole moments provide a convenient way of picturing the atomistic origins arising from moving electric charge. Magnetization (I) is the magnetic dipole moment per unit volume and is expressed in units of Wb m/m3 = Wb/m2. The magnetic flux density (B = I + μ0H) is also in Wb/m2 and is analogous to the electric displacement D. All materials respond to magnetic fields, producing a magnetization I = χH, and a magnetic flux density B = μH where χ is the magnetic susceptibility and μ is the magnetic permeability. Both χ and μ are in henries/m (H/m). The permeability μ = χ + μ0 and is analogous to electric permittivity. χ and μ are sometimes expressed as dimensionless quantities (x ̅ and μ ̅ and ) like the dielectric constant, where = x ̅/μ0 and = μ ̅/μ0. Other magnetic properties will be defined later in the chapter. A schematic view of the submicroscopic origins of magnetic phenomena is presented in Fig. 14.1. Most materials are diamagnetic with only a weak magnetic response induced by an applied magnetic field.
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Conference papers on the topic "Forte permittivité"

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Wasa, Kiyotaka, Tomoaki Matsushima, Hideaki Adachi, et al. "PZT-based high coupling with low permittivity thin films." In 2013 Joint IEEE Int'l Symp on Applications of Ferroelectrics & Workshop on Piezoresponse Force Microscopy (ISAF/PFM). IEEE, 2013. http://dx.doi.org/10.1109/isaf.2013.6748700.

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Bashir, Asad, Abigail R. Clarke-Sather, Tyler M. Poggogiale, and Christopher L. Meehan. "Material Properties of Discarded Textiles for Manufacturing Feedstocks." In ASME 2021 16th International Manufacturing Science and Engineering Conference. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/msec2021-63645.

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Abstract Presently, many textiles are discarded, in a condition that would allow a significant percentage of them to be able to be completely reused or recycled. Recent consumption practices embodied by “fast fashion”, fast purchasing, and fast disposal of out of style clothing has increased the volume of discarded clothing, as the repurposing and/or recycling of discarded textile materials has not increased at a proportional rate. Consequently, discarded clothing may have nearly no wear and tear or extensive use before consumers choose to dispose of these textiles. Increasing the recovery of
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Huang, Deng, Fang Qian, Wenyao Zhang, Cunlu Zhao, Wenbo Li, and Qiuwang Wang. "An Electromechanical Model for Electrowetting." In ASME 2019 6th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/mnhmt2019-4130.

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Abstract We present an electromechanical model for analysis of electrowetting by considering the balance between an electric force and a surface tension force acting on the contact line of three phases, namely the droplet (D) phase the substrate (S) phase and the ambiance (A) phase. We show that the electric force acting on the three-phase contact line generally is contributed by the Maxwell stresses at the ambiance-substrate (A-S) interface, the droplet-substrate (D-S) interface, and the droplet-ambiance (D-A) interface. It was identified that the change of contact angle in electrowetting is
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Mokry, Pavel, Tomas Sluka, and Alexander K. Tagantsev. "Nonlinear extrinsic permittivity and piezoelectricity in lead titanate due to 90° domain walls pinning." In 2013 Joint IEEE Int'l Symp on Applications of Ferroelectrics & Workshop on Piezoresponse Force Microscopy (ISAF/PFM). IEEE, 2013. http://dx.doi.org/10.1109/isaf.2013.6748747.

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Wang, J. H., and C. Q. Chen. "Asymptotic Effective Piezoelectric Coefficient Solution of Piezoresponse Force Microscopy for a Transversely Isotropic Piezoelectric Film." In ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-51276.

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Based on the coupled theory, a simple explicit solution of piezoresponse force microscopy (PFM) in determining the effective piezoelectric coefficient for an ultra-thin transversely isotropic piezoelectric film bonded to a rigid conducting substrate is obtained, using the Taylor expansion and homogeneous assumption. And it is found to be exactly the same as the well-known result for the case of piezoelectric thin film clamped between flat rigid electrodes for homogeneous external electric field. The electric charge and the distance from the image charge model are also derived and the influence
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Sharma, Asha, Sumit Basu, and Nandini Gupta. "Estimation of Interphase Permittivity and Interphase Thickness in Epoxy based Nanocomposites using Electrostatic Force Microscopy." In 2019 IEEE Electrical Insulation Conference (EIC). IEEE, 2019. http://dx.doi.org/10.1109/eic43217.2019.9046552.

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Friedman, Stuart, Oskar Amster, Yongliang Yang, and Fred Stanke. "Nanoscale Capacitance and Capacitance-Voltage Curves for Advanced Characterization of Electrical Properties of Si and GaN Structures Using Scanning Microwave Impedance Microscopy." In ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0449.

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Abstract The use of Atomic Force Microscopy (AFM) electrical measurement modes is a critical tool for the study of semiconductor devices and process development. A relatively new electrical mode, scanning microwave impedance microscopy (sMIM), measures a material’s change in permittivity and conductivity at the scale of an AFM probe tip [1]. sMIM provides the real and imaginary impedance (Re(Z) and Im(Z)) of the probe-sample interface. By measuring the reflected microwave signal as a sample of interest is imaged with an AFM, we can in parallel capture the variations in permittivity and conduct
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Zichen He, Minghe Cao, Nana Wang, et al. "Electron-pinned defect-dipoles for SrTiO3-based ceramics with high permittivity and low dielectric loss." In 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop (ISAF/ECAPD/PFM). IEEE, 2016. http://dx.doi.org/10.1109/isaf.2016.7578071.

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Lai, Maobai, Shuhui Yu, Wenhu Yang, and Rong Sun. "Preparation and evaluation of embedded capacitors with high permittivity BT/ER composites by graft modified method." In 2014 Joint IEEE International Symposium on the Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy (ISAF/IWATMD/PFM). IEEE, 2014. http://dx.doi.org/10.1109/isaf.2014.6917888.

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Li, Xianfei, Ping Wu, Hui Wang, Yili Pei, Sen Chen, and Shiping Zhang. "Dielectric Properties of Er-Doped HfTiO Films for High-K Gate Stacks." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-65098.

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HfTiErO and HfTiO thin films (∼50nm), as potential replacements for traditional SiO2 gate dielectric materials, were prepared on n-Si (100) substrates by radio frequency magnetron sputtering. The dielectric characteristics of HfTiErO were compared with those of HfTiO. The structure of HfTiErO was analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The growth of HfTiErO and HfTiO were observed by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). Experimental results indicate that as the Er content increases, the dielectric constan
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