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Relevant bibliographies by topics / Frontal semiconductor

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Academic literature on the topic 'Frontal semiconductor'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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Journal articles on the topic "Frontal semiconductor"

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Gómez B., Javier, Mariano Vela M., and Melchor Llosa D. "EVALUACIÓN DE LA DIMENSIÓN DE LA ZONA SENSIBLE DE UN DETECTOR SEMICONDUCTOR COAXIAL DE GeHP." Revista de Investigación de Física 7, no. 01-02 (2004): 76–78. http://dx.doi.org/10.15381/rif.v7i01-02.8820.

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En este trabajo se presenta el comportamiento de la sensibilidad de un detector coaxial de GeHP respecto de la llegada del haz de radiación colimado en la dirección frontal como lateral. Los resultados muestran que, para una configuración horizontal o vertical del criostato, existe una dirección preferencial de detección. A partir de los perfiles de sensibilidad se obtuvo un estimado de la dimensión sensible del cristal semiconductor del detector.

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Зегря, Г. Г., В. П. Улин, А. Г. Зегря, Н. В. Улин та Ю. М. Михайлов. "Влияние типа проводимости и уровня легирования кристаллов кремния на размеры каналов пор, формирующихся в них при анодном травлении в растворах плавиковой кислоты". Журнал технической физики 89, № 10 (2019): 1575. http://dx.doi.org/10.21883/jtf.2019.10.48175.91-19.

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AbstractIn this paper, we discuss causes of the multidirectional effect of changes in the concentrations of free charge carriers in silicon crystals of p - and n -type conductivity on the transverse dimensions of pores formed as a result of anodic etching in hydrofluoric acid solutions, as well as the effect of anodic current density on pore size. The observed dependences are explained based on the concepts of electrochemical pore formation in semiconductor crystals as self-organizing cooperative processes accompanied by the injection of electrons from the chemical reaction region at the pore

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Chiarelli, Antonio Maria, David Perpetuini, Pierpaolo Croce, et al. "Fiberless, Multi-Channel fNIRS-EEG System Based on Silicon Photomultipliers: Towards Sensitive and Ecological Mapping of Brain Activity and Neurovascular Coupling." Sensors 20, no. 10 (2020): 2831. http://dx.doi.org/10.3390/s20102831.

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Portable neuroimaging technologies can be employed for long-term monitoring of neurophysiological and neuropathological states. Functional Near-Infrared Spectroscopy (fNIRS) and Electroencephalography (EEG) are highly suited for such a purpose. Their multimodal integration allows the evaluation of hemodynamic and electrical brain activity together with neurovascular coupling. An innovative fNIRS-EEG system is here presented. The system integrated a novel continuous-wave fNIRS component and a modified commercial EEG device. fNIRS probing relied on fiberless technology based on light emitting di

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Parkhomenko, Hryhorii, Mykhailo Solovan, Andrii Mostovyi, Ivan Orletskyi, and Viktor Brus. "Electrical and Photoelectric Properties of Organic-Inorganic Heterojunctions PEDOT:PSS/n-CdTe." 4, no. 4 (December 10, 2021): 43–48. http://dx.doi.org/10.26565/2312-4334-2021-4-04.

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PEDOT: PSS thin films are widely used as transparent coatings in flexible semiconductor devices including solar cells. However, they are not widely used as transparent coatings in combination with crystal substrates. This work shows the possibility of using PEDOT:PSS thin films as a frontal transparent conducting layer in hybrid organic-inorganic Schottky type heterojunctions of the PEDOT:PSS/n‑CdTe, which were prepared by deposition of PEDOT:PSS thin films (using the spin-coating method) on crystalline cadmium telluride substrates. The current-voltage (in a wide temperature range) and capacit

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Islam, T. Almalkawi, H. Al-Bqerat Ashraf, Itradat Awni, and N. Al-Karaki Jamal. "An efficient design of 45-nm CMOS low-noise charge sensitive amplifier for wireless receivers." International Journal of Electrical and Computer Engineering (IJECE) 12, no. 2 (2022): 1274–85. https://doi.org/10.11591/ijece.v12i2.pp1274-1285.

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Amplifiers are widely used in signal receiving circuits, such as antennas, medical imaging, wireless devices and many other applications. However, one of the most challenging problems when building an amplifier circuit is the noise, since it affects the quality of the intended received signal in most wireless applications. Therefore, a preamplifier is usually placed close to the main sensor to reduce the effects of interferences and to amplify the received signal without degrading the signal-to-noise ratio. Although different designs have been optimized and tested in the literature, all of the

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Katoozian, Danial, Hossein Hosseini-Nejad, Mohammad-Reza Abolghasemi Dehaqani, Afshin Shoeibi, and Juan Manuel Gorriz. "A hardware efficient intra-cortical neural decoding approach based on spike train temporal information." Integrated Computer-Aided Engineering, July 7, 2022, 1–15. http://dx.doi.org/10.3233/ica-220687.

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Motor intention decoding is one of the most challenging issues in brain machine interface (BMI). Despite several important studies on accurate algorithms, the decoding stage is still processed on a computer, which makes the solution impractical for implantable applications due to its size and power consumption. This study aimed to provide an appropriate real-time decoding approach for implantable BMIs by proposing an agile decoding algorithm with a new input model and implementing efficient hardware. This method, unlike common ones employed firing rate as input, used a new input space based on

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Johann, Ong. "Salicide Residues Defects Characterization and Reduction in Front-End Pre-Metal Cleaning Process Wafer Fabrication." Engineering and Technology Journal 07, no. 08 (2022). http://dx.doi.org/10.47191/etj/v7i8.03.

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Wafer fabrication for integrated circuit is one of the most complicated process in semiconductor manufacturing industry. High yield is always the ultimate goal to achieve hence a good defect management is the key to ensure the goal is met. Salicide residue is a major defect wet etching process. The defect is contributing a total of 1% loss in overall wafer fab sort yield, that is an equivalent to USD$ 5 million loss per year. The objective for this research is to identify the root cause and determine the element of the residue defect in the wafer substrate at Salicide Pre-Clean wafer fabricati

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Dissertations / Theses on the topic "Frontal semiconductor"

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Кушнір, Б. В., та І. Г. Ткачук. "Гетеропереходи на основі шаруватих кристалів FeIn[2]Se[4] та In[4]Se[3]". Thesis, Сумський державний університет, 2017. http://essuir.sumdu.edu.ua/handle/123456789/64729.

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Шаруваті кристали FeIn2Se4 і In4Se3 – перспективні матеріали для створення фоточутливих гетеропереходів на їх основі , які можуть бути як n-, так і p- типу провідності. Ці матеріали з різною симетрією і періодами кристалічної градки дозволяють методом Ван-дерваальсового контакту поверхонь створювати якісні гетеропереходи. Методом механічного контакту був сформований новий гетероперехід p-FeIn2Se4 – n-In4Se3. Монокристали In4Se3 вирощувалися методом Чохральського і володіли яскраво вираженою шаруватою структурою. В якості фронтального напівпровідника гетеропереходу були обрані кристали FeIn2Se4

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Amann, Andreas. "Nonlinear and chaotic front dynamics in semiconductor superlattices." [S.l.] : [s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=970075081.

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Modestov, Mikhail. "Fronts and instabilities in laser ablation, organic semiconductors and quantum media." Doctoral thesis, Umeå universitet, Institutionen för fysik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-49728.

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The concept of a front plays a decisive role in various elds in physics and beyond. In the present thesis we study key aspects of front dynamics and stability in the context of laser plasmas, organic semiconductors and quantum media. In laser plasmas, we investigate the hydrodynamic instabilities developing at the fronts of laser deagration (ablation). Using direct numerical simulations, we nd noticeable velocity increase of the Rayleigh-Taylor bubble at a deagration front in comparison with that arising at an inert interface. We study the Darrieus-Landau instability of laser deagration accoun

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Tsui, Hau Yiu. "A 5 GHz integrated low-power CMOS RF front-end IC design /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202004%20TSUI.

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Cha, Jeongwon. "A CMOS radio-frequency front-end for multi-standard wireless communications." Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37250.

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The explosive growth of wireless communication market has led the development of low-cost, highly-integrated wireless communication systems. Even though most blocks in the front-end have successfully been integrated by using the CMOS technology, it is still a formidable challenge to integrate the entire front-end. Thus, the objective of this research is to demonstrate the feasibility of the integrated front-end by using improved circuit techniques as well as the improved process technologies. This dissertation proposes an improved control scheme to enhance the high-power handling capability of

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Perumana, Bevin George. "Low-power CMOS front-ends for wireless personal area networks." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/26712.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.<br>Committee Chair: Laskar, Joy; Committee Member: Chakraborty, Sudipto; Committee Member: Chang, Jae Joon; Committee Member: Divan, Deepakraj; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanouil. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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Chen, Chih-Hung. "CMOS RF front-end design of a very narrowband transceiver with 0.18[micrometers]." To access this resource online via ProQuest Dissertations and Theses @ UTEP, 2008. http://0-proquest.umi.com.lib.utep.edu/login?COPT=REJTPTU0YmImSU5UPTAmVkVSPTI=&clientId=2515.

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Kim, Hyun-Woong. "CMOS RF transmitter front-end module for high-power mobile applications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/47592.

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With the explosive growth of the wireless market, the demand for low-cost and highly-integrated radio frequency (RF) transceiver has been increased. Keeping up with this trend, complimentary metal-oxide-semiconductor (CMOS) has been spotlighted by virtue of its superior characteristics. However, there are challenges in achieving this goal, especially designing the transmitter portion. The objective of this research is to demonstrate the feasibility of fully integrated CMOS transmitter module which includes power amplifier (PA) and transmit/receive (T/R) switch by compensating for the intrinsic

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Poh, Chung Hang. "SiGe HBT BiCMOS RF front-ends for radar systems." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/45874.

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The objective of this research is to explore the possibilities of developing transmit/receive (T/R) modules using silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology to integrate with organic liquid crystal polymer (LCP) packages for the next-generation phased-array radar system. The T/R module requirements are low power, compact, lightweight, low cost, high performance, and high reliability. All these requirements have provided a very strong motivation for developing fully monolithic T/R modules. SiGe HBT BiCMOS technology is an excellent candidate to integrate

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Park, Jinsung. "A highly linear and low flicker-noise CMOS direct conversion receiver front-end for multiband applications." Diss., Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-07092007-054701/.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.<br>Dr. Chang-Ho Lee, Committee Member ; Dr . Kevin T Kornegay, Committee Member ; Dr. Emmanouil M Tentzeris, Committee Member ; Dr. Joy Laskar, Committee Chair ; Dr. Oliver Brand, Committee Member.

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Books on the topic "Frontal semiconductor"

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Bli͡um, I. S. Vdali ot fronta. Mariĭskoe knizhnoe izd-vo, 1985.

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Chang, Oliver T. Frontal Semiconductor Research. Nova Science Publishers, 2006.

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Book chapters on the topic "Frontal semiconductor"

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Ryu, Yongwook. "Chips on the Deck: US-China Rivalry and Reorganizing the Supply Chains of Semiconductors." In The South China Sea: The Geo-political Epicenter of the Indo-Pacific? Springer Nature Singapore, 2025. https://doi.org/10.1007/978-981-97-8209-3_8.

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Abstract The semiconductor sector is critical for ensuring tech superiority, which will in turn shape the contest for global hegemony and order. Therefore, it is no wonder why the US and China are locked in a contest for chip dominance, for it is the most critical aspect of tech superiority. The US is determined to maintain its tech superiority over China through export controls and the reorganization of the current supply chains of chip production, to curtail China’s tech rise. The US under the Biden administration is utilizing its control over the front end of the supply chains such as softw

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Mele, Filippo. "Application Specific Integrated Circuits for High Resolution X and Gamma Ray Semiconductor Detectors." In Special Topics in Information Technology. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-85918-3_3.

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AbstractThe increasing demand for performance improvements in radiation detectors, driven by cutting-edge research in nuclear physics, astrophysics and medical imaging, is causing not only a proliferation in the variety of the radiation sensors, but also a growing necessity of tailored solutions for the front-end readout electronics. Within this work, novel solutions for application specific integrated circuits (ASICs) adopted in high-resolution X and $$\upgamma $$ γ ray spectroscopy applications are studied. In the first part of this work, an ultra-low noise charge sensitive amplifier (CSA) i

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Alexandrov, D. V., V. V. Mansurov, and P. K. Galenko. "Dynamic Instability of Rapid Solidification Fronts." In Mathematics of Heat Transfer. Oxford University PressOxford, 1998. http://dx.doi.org/10.1093/oso/9780198503583.003.0005.

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Abstract Planar front dynamic instability in the presence of rapid solidification is considered. Directional solidification of multi-component liquids often produces material with a laminated periodic ordered structure, especially under reduced gravity conditions when convection is hindered or prohibited. This structure has layers of abnormally high or low solute concentrations, roughly parallel to the crystallization front. This was detected by Stewart et al. [1] and is extensively discussed in [2)-[6). Different layered segregation patterns are characteristic of semiconductor crystals [7]-[1

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"Introduction to the History of Semiconductors." In ULSI Front-End Technology. WORLD SCIENTIFIC, 2017. http://dx.doi.org/10.1142/9789813222168_0001.

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Kelly, M. J. "III-V Semiconductor Homojunctions And Heterojunctions." In Low-Dimensional Semiconductors. Oxford University PressOxford, 1995. http://dx.doi.org/10.1093/oso/9780198517818.003.0002.

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Abstract In the Introduction, we referred to the hundredfold reduction in the lateral feature size of transistors in integrated circuits over the period from the late 1960s to the present day. This reduction has been accompanied by a similar scaling down of vertical dimensions of the devices, i.e. in the thicknesses of the individual layers (see Dennard et al. (1974) and Chapter 21 below). Indeed, if one takes the p-n-p bipolar transistor from its earliest fabrication to the present day, new technologies that have allowed the ever sharper internal interfaces of devices to be achieved have appe

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Morko, Hadis, Aldo Di Carlo,, and Roberto Cingolani. "GaN-based modulation doped FETs." In Low-Dimensional Nitride Semiconductors. Oxford University PressOxford, 2002. http://dx.doi.org/10.1093/oso/9780198509745.003.0014.

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Abstract Because of their large bandgap, large high-field electron velocity, large breakdown field, large thermal conductivity, and robustness, GaN and its hetero structures with InGaN and AlGaN have recently attracted a good deal of attention for high power/high temperature electronics applications, and for use in optoelectronic devices operative in the UV and visible wavelengths. Specifically, the hetero structures based on GaN have paved the way to AlGaN/GaN MODFETs with CW power levels of about 6 W at 10 GHz in devices with 1 mm gate periphery which are comparable to power densities extrap

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Cole, Robert E. "Quality Outcomes." In Managing Quality Fads. Oxford University PressNew York, NY, 1999. http://dx.doi.org/10.1093/oso/9780195122602.003.0010.

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Abstract In the early and mid-1980s, American manufacturing managers in internationally competitive markets such as auto and semiconductors/electronics were wringing their hands, despairing of competing with the Japanese. The overall attitude among executives was that quality was a Japanese possession that would be hard, if not impossible, for Americans to acquire. What a difference a decade and a half makes! The Japanese quality advantage has disappeared from the front and even back pages of the business media. Indeed, quality as an internationally competitive issue has greatly receded from p

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E. Abd El-Samad, Alaa, Radwa S. Mostafa, Hager H. Zeenelabden, et al. "Mixed 2D-3D Halide Perovskite Solar Cells." In Solar Cells [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97684.

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The 3D-perovskite halides have gained a considerable reputation versus their counterpart semiconductor materials since they achieved a remarkable high-power conversion efficiency of 25.2% within a decade. Perovskite solar cells also have some problems as lattice degradation and sensitivity against moisture, oxygen, and strong irradiation. The perovskite instability is the drawback in front of this emerging technology towards mass production and commercialization. 2D-perovskites, with the general formula A2Bn − 1MnX3n + 1, have been recently introduced to overcome some of the drawbacks of the s

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"In situ dose measurements in brachytherapy and teleradiotherapy using scintillation detectors based on the tissue-equivalent Al2O3:C, Al2O3:C,Mg and heavy GAGG:Ce crystals." In Book of Abstracts - RAD 2025 Conference. RAD Centre, Niš, Serbia, 2025. https://doi.org/10.21175/rad.abstr.book.2025.27.1.

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Conventional detectors based on ionization chambers, semiconductors or thermoluminescent materials, in principle, cannot be used to verify in vivo the radiation dose delivered during brachytherapy treatments with γ-ray sources. Analysis of existing alternatives to accurate in vivo dosimeters for brachytherapy suggests that the future of such detectors will be connected with monitor radiation dose in real time. The best approach to use for this purpose of the dosimetric materials based on scintillation crystals. The delivered radiation dose was registered using the radioluminescence response of

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Pool, Robert. "Business." In Beyond Engineering. Oxford University Press, 1997. http://dx.doi.org/10.1093/oso/9780195107722.003.0008.

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In January 1975, the magazine Popular Electronics trumpeted the beginnings of a revolution. “Project Breakthrough,” the cover said: “World’s First Minicomputer Kit to Rival Commercial Models.” Inside, a six-page article described the Altair, an unassembled computer that could be ordered from MITS, a company in Albuquerque originally founded to sell radio transmitters for controlling model airplanes. To the uninitiated, it didn’t look like much of a revolution. For $397 plus shipping, a hobbyist or computer buff could get a power supply, a metal case with lights and switches on the front panel,

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Conference papers on the topic "Frontal semiconductor"

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"[Front cover]." In 2014 International Semiconductor Conference (CAS). IEEE, 2014. http://dx.doi.org/10.1109/smicnd.2014.6966365.

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"[Front cover]." In 2014 International Semiconductor Conference (CAS). IEEE, 2014. http://dx.doi.org/10.1109/smicnd.2014.6966366.

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"[Front cover]." In 2015 International Semiconductor Conference (CAS). IEEE, 2015. http://dx.doi.org/10.1109/smicnd.2015.7355134.

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"[Front cover]." In 2015 International Semiconductor Conference (CAS). IEEE, 2015. http://dx.doi.org/10.1109/smicnd.2015.7355135.

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"[Front cover]." In 2017 International Semiconductor Conference (CAS). IEEE, 2017. http://dx.doi.org/10.1109/smicnd.2017.8101130.

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"Front Matter." In 2022 Compound Semiconductor Week (CSW). IEEE, 2022. http://dx.doi.org/10.1109/csw55288.2022.9930393.

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"Front Matter: Volume 10321." In Single Frequency Semiconductor Lasers, edited by Jens Buus. SPIE, 2017. http://dx.doi.org/10.1117/12.2284080.

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"2000 International Semiconductor Conference [front matter]." In 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings. IEEE, 2000. http://dx.doi.org/10.1109/smicnd.2000.889112.

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"2003 International Semiconductor Conference [front matter]." In 2003 International Semiconductor Conference. CAS 2003 Proceedings. IEEE, 2003. http://dx.doi.org/10.1109/smicnd.2003.1252419.

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"[Front cover]." In 2007 International Semiconductor Conference, CAS 2007. IEEE, 2007. http://dx.doi.org/10.1109/smicnd.2007.4519625.

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