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Dissertations / Theses on the topic 'Gd203'

Author: Grafiati
Published: 4 June 2021
Last updated: 17 February 2022

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1

Becerra, Loic. "Hétérostructures et disponibles microélectriques à base d'oxydes High-k : Préparés sur silicium par EJM." Ecully, Ecole centrale de Lyon, 2008. http://www.theses.fr/2008ECDL0036.

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Depuis 40 ans, l’industrie microélectronique s’est développée en exploitant la technologie CMOS silicium et en se livrant à une course effrénée vers la miniaturisation des dispositifs. Cette miniaturisation est de plus en plus limitée par l’apparition de phénomènes quantiques. Ainsi, désormais beaucoup trop fine pour autoriser des densités de courants de fuite acceptables au bon fonctionnement des transistors MOSFET, la traditionnelle couche isolante de grille SiO2-SiOxNy s’est vue détrônée au profit des oxydes high-κ qui, à structure capacitive équivalente, présentent une épaisseur physique p
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2

Klasson, Anna. "MRI Contrast Enhancement using Gd2O3 Nanoparticles." Licentiate thesis, Linköpings universitet, Medicinsk radiologi, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11041.

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There is an increasing interest for nanomaterials in biomedical applications and in this work, nanoparticles of gadolinium oxide (Gd2O3) have been investigated as a novel contrast agent for Magnetic Resonance Imaging (MRI). Relaxation properties have been studied in aqueous solutions as well as in cell culture medium and the nanoparticles have been explored as cell labeling agents. The fluorescent properties of the particles were used to visualize the internalization in cells and doped particles were also investigated as a multimodal agent that could work as a fluorescent marker for microscopy
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3

Yang, Qigui. "Theoretical study of Gd2O3-CeO2 (111) interface." Thesis, KTH, Materialvetenskap, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-234848.

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Atomistic modelling has widely been applied for studying structures and properties of materials. There are various methods to perform atomistic modelling. This master thesis presents a combined density functional theory (DFT) and cluster expansion (CE) study of Gd2O3 and Gd2O3-CeO2 interface (GCI) relevant for solid oxide fuel cells (SOFCs).    The energy differences (ΔE) of Va-O exchanges in C-type Gd2O3 and at GCI are calculated using both DFT and CE methods. We also calculated the migration energy (Emig) of Va jumps in Gd2O3 and at GCI by DFT. The comparison between the CE and DFT results d
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4

Backman, Fredrik. "Gd2O3 nanoparticles fabricated by aerosol technique : “A promising approach for future applications”." Thesis, Linköpings universitet, Institutionen för fysik, kemi och biologi, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-66441.

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The purpose of this work was to study the possibility of creating Gd2O3-nanoparticles by spark generation. For this, the Palas GFG 1000 aerosol generator was used with much positive results. The potential possibilities to tune the physical properties of the nanoparticles by varying a set of experimental parameters during the fabrication process have been studied. This was investigated by comparing particles made by two different types of methods: wet chemistry (colloids), which was used in an earlier study, and an aerosol technique (aerosols), that was explored in this study. In this work, the
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5

Hedlund, Anna. "MRI Contrast Enhancement and Cell Labeling using Gd2O3 Nanoparticles." Doctoral thesis, Linköpings universitet, Centrum för medicinsk bildvetenskap och visualisering, CMIV, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-68802.

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There is an increasing interest for nanomaterials in bio-medical applications and in this work, nanoparticles of gadolinium oxide (Gd2O3 ) have been investigated as a novel contrast agent for magnetic resonance imaging (MRI). Relaxation properties have been studied in aqueous solutions as well as in cell culture medium and the nanoparticles have been explored as cell labeling agents. The fluorescent properties of the particles were used to visualize the internalization in cells and doped particles were investigated as a multimodal agent that could work as a fluorescent marker for microscopy an
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6

SERAFIM, ANTONIO da C. "Estudo da densificação do combustível urânio - 7% gadolínio (Gd2O3) nanoestruturado." reponame:Repositório Institucional do IPEN, 2016. http://repositorio.ipen.br:8080/xmlui/handle/123456789/27502.

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Submitted by Marco Antonio Oliveira da Silva (maosilva@ipen.br) on 2017-05-25T13:33:55Z No. of bitstreams: 0<br>Made available in DSpace on 2017-05-25T13:33:55Z (GMT). No. of bitstreams: 0<br>O processo de sinterização de pastilhas de UO2-Gd2O3 tem sido investigado devido à sua importância na indústria nuclear e ao comportamento complexo durante a sinterização. A sinterização é bloqueada a partir de 1300°C, quando a densificação é deslocada na direção de maiores temperaturas e a densidade final obtida é diminuída. Esta pesquisa contempla o desenvolvimento de combustíveis nucleares para reator
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Pagano, Junior Luciano. "Efeitos de aditivos na sinterização do combustivel nuclear UO2.Gd2O3." [s.n.], 2009. http://repositorio.unicamp.br/jspui/handle/REPOSIP/267165.

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Orientador: Gustavo Paim Valença<br>Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Quimica<br>Made available in DSpace on 2018-08-14T01:43:35Z (GMT). No. of bitstreams: 1 PaganoJunior_Luciano_D.pdf: 3596308 bytes, checksum: 5144d304934b8f4fef833acb8200cddf (MD5) Previous issue date: 2009<br>Resumo : O efeito dos aditivos TiO2, Nb2O5, SiO2, Fe2O3 e Al(OH)3, em concentração de 0,5% em massa, na cinética sinterização do combustível nuclear UO2·7%Gd2O3 em atmosfera de H2 a 99,999% foi investigada por stepwise isothermal dilatometry. Este combustível, usado como ven
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8

Serafim, Antonio da Costa. "Estudo da densificação do combustível urânio - 7% gadolínio (Gd2O3) nanoestruturado." Universidade de São Paulo, 2016. http://www.teses.usp.br/teses/disponiveis/85/85134/tde-27012017-094202/.

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O processo de sinterização de pastilhas de UO2-Gd2O3 tem sido investigado devido à sua importância na indústria nuclear e ao comportamento complexo durante a sinterização. A sinterização é bloqueada a partir de 1300°C, quando a densificação é deslocada na direção de maiores temperaturas e a densidade final obtida é diminuída. Esta pesquisa contempla o desenvolvimento de combustíveis nucleares para reatores de potência visando aumentar a sua eficiência no núcleo do reator através da elevação da taxa de queima. Foi estudado o uso do Gd2O3 de tamanho nanométrico, na faixa de 10 a 30nm, o qual foi
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9

Durazzo, Michelangelo. "Estudo do mecanismo de bloqueio da sinterização no sistema UO2-Gd2O3." Universidade de São Paulo, 2001. http://www.teses.usp.br/teses/disponiveis/85/85134/tde-18062012-091401/.

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A incorporação do gadolínio diretamente no combustível de reatores nucleares para geração de eletricidade é importante para compensação da reatividade e para o ajuste da distribuição da densidade de potência, permitindo ciclos de queima mais longos, com intervalo de recarga de 18 meses, otimizando-se a utilização do combustível. A incorporação do Gd2O3 sob a forma de pó homogeneizado a seco diretamente com o pó de UO2 é o método comercialmente mais atraente devido à sua simplicidade . Contudo, este método de incorporação conduz a dificuldades na obtenção de corpos sinterizados com a densidade
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10

Carvalho, Ryana. "Encapsulation of SiO2 coated Gd2O3+: Eu3+ nanoparticles using PAA macroRAFT agents." Master's thesis, Universidade de Aveiro, 2010. http://hdl.handle.net/10773/7572.

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Mestrado em Ciência e Engenharia dos Materiais<br>O desenvolvimento de novos materiais com propriedades funcionais é uma constante necessidade para a maturação e sustentabilidade da sociedade como um todo. No que diz respeito aos nanocompósitos de matriz polimérica, uma das maiores restrições ao seu uso é a preservação e o controlo das propriedades físicas únicas das cargas de dimensões nanométricas, sendo portanto essencial manter a sua integridade e conseguir dispersões uniformes. Tal é particularmente difícil no caso de nanopartículas anisotrópicas, tais como as fibras de Gd2O3:Eu 3+
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11

Radenbach, Hannes N. "Radiative Behaviour of Gd2O3:Er/Yb nanoparticles under near infrared illumination." Master's thesis, Universidade de Aveiro, 2015. http://hdl.handle.net/10773/16116.

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Mestrado em Ciência e Engenharia de Materiais<br>Upconverting nanoparticles have attracted much attention in science recently, specifically in view of medical and biological applications such as live imaging of cell temperatures or cancer treatment. The previously studied system of gadolinium oxide nanorods co-doped with erbium and ytterbium and decorated with different number densities of gold nanoparticles has been studied. So far, these particles have been proven as efficient nanothermometers in a temperature range from 300 up to 2000 K. In this work, a more detailed study on the morphological
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12

Balestrieri, Didier. "Etude et optimisation du combustible à poison consommable de structure composite UO2/Gd2O3." Lyon, INSA, 1995. http://www.theses.fr/1995ISAL0061.

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La céramique composite étudiée concerne un combustible nucléaire constitué d'une matrice de dioxyde d'uranium au sein de laquelle sont dispersés de gros grains (ou "macromasses") d'oxyde de gadolinium de 300 ± 100 μm de diamètre (fraction massique de 12%). Utilisé comme poison consommable, l'oxyde de gadolinium a fait l'objet d'une attention particulière puisque certaines de ses propriétés comme la structure cristalline, l'aptitude au frittage et le comportement thermomécanique, ont été étudiées. L'objectif de cette étude a consisté à mettre au point et à optimiser le procédé de fabrication du
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13

Merckling, Clément. "Croissance épitaxiale d'oxydes "high-κ" sur silicium pour CMOS avancé : LaAlO3, Gd2O3, γ-Al2O3". Phd thesis, Ecole Centrale de Lyon, 2007. http://tel.archives-ouvertes.fr/tel-00201791.

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La miniaturisation depuis 50 ans des composants, transistors MOSFET à base de silicium, dans les technologies CMOS est de plus en plus limité par l'apparition de phénomènes quantiques dans les dispositifs de taille sub-0,1 µm. L'épaisseur requise pour l'isolant de grille devenant trop faible, cela induit une très forte augmentation des courants de fuites à travers le diélectrique. Une solution pour résoudre ce problème est de remplacer la silice (SiO2), qui est l'isolant naturel du substrat de Si, par un autre matériau qui a une constante diélectrique plus élevée que celle de la silice. Avec c
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14

Corrêa, Eduardo de Lima. "Produção, caracterização e aplicação de nanopartículas de Gd2O3 e Er2O3 como radiossensibilizadores em feixes de Radioterapia." Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/85/85131/tde-24072017-144641/.

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Nesse trabalho foram produzidas nanopartículas (NPs) de Gd2O3 e Er2O3 para aplicação como radiossensibilizadores em feixes de radioterapia. Elas foram sintetizadas no Laboratório de Interações Hiperfinas do IPEN pelo método da decomposição térmica e caracterizadas utilizando difração de raios-X, para verificar a estrutura cristalina, microscopia eletrônica de transmissão, para obter informações sobre forma, tamanho e distribuição de tamanho, análise por ativação neutrônica, por meio da qual foi possível determinar a pureza das amostras e calcular a concentração de gadolínio e érbio. Medições d
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15

CORREA, EDUARDO DE L. "Produção, caracterização e aplicação de nanopartículas de Gd2O3 e Er2O3 como radiossensibilizadores em feixes de Radioterapia." reponame:Repositório Institucional do IPEN, 2017. http://repositorio.ipen.br:8080/xmlui/handle/123456789/27968.

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Submitted by Marco Antonio Oliveira da Silva (maosilva@ipen.br) on 2017-11-08T16:29:11Z No. of bitstreams: 0<br>Made available in DSpace on 2017-11-08T16:29:11Z (GMT). No. of bitstreams: 0<br>Nesse trabalho foram produzidas nanopartículas (NPs) de Gd2O3 e Er2O3 para aplicação como radiossensibilizadores em feixes de radioterapia. Elas foram sintetizadas no Laboratório de Interações Hiperfinas do IPEN pelo método da decomposição térmica e caracterizadas utilizando difração de raios-X, para verificar a estrutura cristalina, microscopia eletrônica de transmissão, para obter informações sobre form
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16

Garcia-Murillo, Antonieta. "Élaboration, propriétés structurales, optiques et spectroscopiques de films sol-gel scintillants de Gd2O3 et Lu2O3 dopés Eu3+." Lyon 1, 2002. http://www.theses.fr/2002LYO10050.

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L'étude de nouveaux matériaux scintillateurs dans divers domaines d'application, et plus particulièrement dans l'imagerie X, connaît un intérêt grandissant. De tels systèmes d'imagerie nécessitent des matériaux denses et lourds, capables d'absorber fortement des photons de hautes énergies. Les oxydes de gadolinium (d=7. 6 gcm-3) et de lutécium (d=9. 4 gcm-3) dopés avec l'ion europium sont utilisés sous la forme de poudres pour la scintillation car ils présentent un haut coefficient d'absorption des rayonnements X. L'ion europium trivalent a une fluorescence très efficace dans le domaine visibl
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17

Mercier, Bruno. "Propriétés de luminescence et effets de confinement dans Gd2O3 : eu3+ : études de nanocristaux issus de différentes voies de synthèse." Lyon 1, 2005. http://www.theses.fr/2005LYO10111.

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Les propriétés structurales et de luminescence des sesquioxydes dopés par les ions terres rares sont connues depuis longtemps. Elles ont été étudiées en tant que matériaux modèles et en tant que matériaux luminophores pour les applications telles que l'éclairage et les techniques d'affichages. En particulier l'ion Eu3+, en tant qu'activateur émet en général une luminescence intense autour de 611nm. Il assure ainsi la couleur rouge dans les applications précédemment citées. D'autre part, l'ion Eu3+ est également connu en tant que sonde structurale. Ses propriétés spectroscopiques dépendent sens
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18

Gribisch, Philipp [Verfasser]. "Einfluss der Präparationsbedingungen auf die strukturellen und dielektrischen Eigenschaften von Gd2O3-Schichten gewachsen mit Molekularstrahlepitaxie auf Si(001) / Philipp Gribisch." Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2020. http://d-nb.info/1224608801/34.

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Araújo, Huyrá Estevão de. "CeO2 - 10% MOL Gd2O3: efeito da codopagem com X% MOL Sm2O3 (0≤ X ≤2) na microestrutura e na condutividade elétrica." Universidade Federal de São Carlos, 2011. https://repositorio.ufscar.br/handle/ufscar/858.

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Made available in DSpace on 2016-06-02T19:12:17Z (GMT). No. of bitstreams: 1 4097.pdf: 3472650 bytes, checksum: dd1c4172f8e886f52e4082cca307ccde (MD5) Previous issue date: 2011-09-16<br>Financiadora de Estudos e Projetos<br>Fuel cells are the most promising technology for producing clean energy. In particular, the Solid Oxide Fuel Cell (SOFC) stands out among the various types due to high efficiency at high temperatures (800 ~ 1000°C) resulting in high cost for power generation. The operating temperature decreasing allows the use of non expensive materials and increases cell life time. One o
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Santos, Lauro Roberto dos. "Estudo do processamento do combustível UO2-7%Gd2O3 via mistura mecânica com reutilização de rejeitos do processo de fabricação e aditivo de densificação." Universidade de São Paulo, 2009. http://www.teses.usp.br/teses/disponiveis/85/85134/tde-23062009-165408/.

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No ciclo do combustível nuclear as etapas de reprocessamento e estocagem do combustível queimado, seja ela de modo provisório ou definitivo, demandam um alto custo além de problemas ambientais. Uma estratégia para minorar estes problemas é adoção de medidas que diminuam a quantidade de rejeitos. A utilização de veneno queimável integrado a base de gadolínia é uma medida que contribui para esse objetivo. A função do veneno queimável é controlar a população de nêutrons no início da vida do reator ou no início do ciclo de queima de cada recarga do combustível, podendo prolongar o tempo de recarga
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Flores-González, Marco Antonio. "Poudres luminescentes nanostructurées : élaboration et caractérisation de sesquioxydes sub-microniques YéO3, Gd2O3 purs et dopés Eu, Tb par précipitation en milieu poly alcoolique." Lyon 1, 2005. http://www.theses.fr/2005LYO10069.

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En utilisant une synthèse de chimie douce, nous avons synthétisé par précipitation directe à basse température (<200°C) des sesquioxydes de lanthanides purs et dopés dans un milieu polyalcoolique. L'utilisation d'un nitrate de terre rare a été proposée pour synthétiser des particules de 6 nm lesquelles ont été agrégées entre elles pour former des poudres sphériques de ~500 nm qui ont été facilement précipitées. Les caractérisations des nanoparticules ainsi que des poudres ont été effectuées par granulométrie laser, DRX, MEB, TEM et thermogravimétrie. Des poudres sub-microniques nanostructurées
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Seve, Aymeric. "Optimisation de nanoparticules multifonctionnelles pour une amélioration de l'efficacité photodynamique, de la sélectivité tumorale et de la détection par IRM." Thesis, Université de Lorraine, 2013. http://www.theses.fr/2013LORR0174/document.

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La thérapie photodynamique (PDT pour Photodynamic Therapy) met en jeu des molécules nommées photosensibilisateurs (PS), de l'oxygène et de la lumière. Les PS, non cytotoxiques à l'obscurité, produisent des espèces réactives de l'oxygène (ROS) lorsqu'ils sont excités avec une longueur d'onde appropriée en présence d'oxygène. Les ROS regroupent les radicaux de l'oxygène et l'oxygène singulet (1O2), qui est la principale forme de ROS formés lors du processus de PDT. En présence de tissus vivants, l'1O2 va conduire à la mort cellulaire par apoptose ou par nécrose. Pour améliorer l'efficacité photo
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23

El, Kazzi Mario. "ETUDE PAR PHOTOEMISSION (XPS & XPD) D'HETEROSTRUCTURES D'OXYDES FONCTIONNELS EPITAXIES SUR SILICIUM." Phd thesis, Ecole Centrale de Lyon, 2007. http://tel.archives-ouvertes.fr/tel-00321458.

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Cette thèse se situe dans un des axes principaux de l'INL qui a pour objectif de développer des procédés de fabrication de films minces d'oxydes monocristallins, épitaxiés sur silicium. Ces oxydes pourraient remplacer les oxydes de grille amorphes de type SiOxNy ou HfSixOyNz et répondre au cahier des charges de la « Road Map » de l'ITRS dans les futures filières CMOS sub 22nm. L'intérêt de maîtriser l'épitaxie d'oxydes sur silicium va bien au-delà de l'application au CMOS. Un tel savoir faire serait une brique technologique essentielle pour pouvoir développer des filières d'intégration monolit
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Huang, Yi-Lin, and 黃怡霖. "Thermodynamic stability of Ga2O3(Gd2O3)/GaAs interface." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/61289981479148544948.

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碩士<br>國立清華大學<br>材料科學工程學系<br>93<br>Ga2O3(Gd2O3)/GaAs heterostructures have been annealed up to ~780�aC. Studies using x-ray reflectivity and high-resolution transmission electron microscopy have shown that the samples annealed under ultra high vacuum(UHV) have maintained smooth and abrupt interfaces with the interfacial roughness being less than 0.2 nm. The oxide remains as amorphous, an important parameter for device consideration. Current-voltage and capacitance-voltage measurements have shown low leakage currents (10-8 to 10-9 A/cm2), a high dielectric constant of 15, and a low interfacial d
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Jana, Debanjan, and 迦納. "Nanoscale resistive switching memory using Gd2O3/Al2O3 materials." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/rzsn5p.

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Lin, Chung-Hsin, and 林忠信. "Ab-initio Study of Gd2O3 Heteroepitaxy on Si." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/08022731309531219355.

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碩士<br>國立中興大學<br>精密工程學系所<br>102<br>This thesis calculates the interface energy of the bixbite Gd2O3 heterogeneous epitaxial growth on the diamond-structure silicon by utilizing first-principles within density-functional theory. Moreover, the atomic arrangement at the interface of Gd2O3(111)/Si(111) is studied through analyzing the interface models. The results show that the most stable atomic bonding at the interface is O－Si; meanwhile, the lowest surface energy at 0.037 eV/A2 is obtained for the Gd-terminated Gd2O3 epitaxially grown on the Si in the Gd-rich atmosphere, which possesses of the e
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Huang, Chuan Yu, and 黃詮祐. "The Study of Ti-Doped Gd2O3 Dielectric as Sensing." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/87616001215410314626.

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碩士<br>長庚大學<br>電子工程學系<br>99<br>Various high dielectric constant (high-k) materials replacing the gate SiO2 oxide layer have been widely investigated owing to their high dielectric constant and large conduction band offset. In this work, the comparison between the high-k Gd2O3 and Ti-doped Gd2O3 dielectrics by reactive radio frequency (RF) sputtering on single crystalline and polycrystalline silicon were investigated and exploited to characterize the dielectric performance so that we can find the optimal condition to obtain the dielectrics with superior dielectric strength and lower leakage curr
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Huang, Chien Shiang, and 黃建翔. "The fabrication of SiC based pH sensor with Gd2O3 Gates." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/35272265517510364665.

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碩士<br>長庚大學<br>電子工程學系<br>100<br>In this thesis two different group of Ion-Sensitive Field Effect Transistors (ISFET) with respect conventional Si substrate and high band gap SiC substrate are fabricated. Each of them are coupled with Gd2O3 and Si3N4 thin gate films, and their properties are studied. The information gained in this work can be used to construct an optimal structure and be extended to the further Light Addressable Potentiometric Sensors ( LAPS) fabrications. Also in this thesis, we have studied the basic I-V characteristics of MIS structure, the C-V sensitivity and linearity of EI
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Huang, Po Wei, and 黃柏瑋. "The Study of Gold and Gd2O3 Double- Nanocrystal Nonvolatile Memory." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/74998191728219540276.

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碩士<br>長庚大學<br>電子工程學系<br>100<br>In the last few years, floating gate memory devices have been widely used in non-volatile memory (NVM) data storage application. Nowadays, floating gate has been applied on commercial digital products such as USB and SSD. However, for conventional floating gate memory, it faces several significant shortcomings such as high operation voltage, poor data storage time and the size limits. In order to improve these problems, the separated nanocrystal charge storage node memory has been proposed. The good ability of carrier storage not only improve device scaling limit
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Lai, Te-Yang, and 賴德洋. "High quality nano thick Gd2O3 and Y2O3 films on GaN." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/81726905344217756014.

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碩士<br>國立清華大學<br>材料科學工程學系<br>97<br>High-quality nano-thick Gd2O3 and Y2O3 epitaxial films have been grown on GaN(0001)h substrate by molecular beam epitaxy (MBE). The epi-layer of R2O3 (where R denotes Gd and Y) still exhibit remarkably uniform thickness and highly structural perfection despite a large lattice mismatch of 15-17% with the substrate. Structural and morphological investigation were carried out by in-situ reflection high energy electron diffraction (RHEED)、synchrotron x-ray diffraction (XRD) and x-ray reflectivity (XRR). The electric properties were studied by measuring their C-V
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Hsu, Hui-Hsin, and 許惠欣. "Characteristics of Gd2O3 Gate Dielectric Deposited by Reactive RF-sputterin." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/31592765566424389472.

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碩士<br>長庚大學<br>電子工程研究所<br>93<br>According to the ITRS (International Technology Roadmap for Semiconductor), the dimension of devices were scaling down focus on the channel and gate silicon dioxide thickness to be decreased decrease rapidly. It would face several problems. As the oxide thickness less than 3nm, the gate leakage current and boron penetration through oxide are more seriously to influence the properties of devices. In order to resolve these questions, that the replacement of SiO2 was required by High-k dielectric materials and I researched extensively, such as Ta2O5, Al2O3, HfO2, Gd
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32

Chuang, Cho-Ying, and 莊卓穎. "Transport and optical properties of Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As/GaAs multilayer." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/85508334472954376490.

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碩士<br>國立清華大學<br>物理學系<br>97<br>隨著尺寸的微小化，二氧化矽/矽的半導體元件已逐漸逼近其量子穿隧極限，因此，高介電係數的閘極氧化層及高電子遷移率的基板(三五族半導體及鍺)即成為取代二氧化矽/矽系統的最佳候選人。然而，如何定義高介電閘極氧化層與半導體間的介面特性仍是個重大課題。本實驗結合傳輸與光學方法，探討分子束磊晶成長的氧化鋁/氧化鎵(氧化釓)/砷化銦鎵/砷化鎵之介面性質。 傳輸性質方面，不同氧化鎵(氧化釓)厚度條件(20, 10, 7, 3.6 nm)，經過氫氣下的850oC快速高溫熱退火，此異質結構呈現極佳的電性。電容-電壓量測結果顯示，介電常數均維持在12-15、10到500千赫茲間的積聚電容值頻率分散皆在5%以下，且最小等效電容厚度(Capacitive effective thickness, CET)可達1 nm。電流-電壓量測結果顯示，平帶電壓加1V處之漏電流密度低至10-9A/cm2。而在擬穩態電容-電壓量測下，電容-電壓曲線中的少數載子反轉行為與理想曲線的吻合度達80%，顯示氧化鎵(氧化釓)可有效鈍化砷化銦鎵表面，讓費米能階在外加電壓下可近乎自由活動。 光學性質方面，我們使用新穎的時間解析二倍頻技術來探討介面性質。二倍頻的優點在於不只量到表面訊號，還可量測到埋在下層的介面訊號。但分析實驗所得的同調聲子光譜後發現，由於砷化銦鎵/砷化鎵基板為
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33

Huang, Jing Wen, and 黃靖文. "Gd2O3/La2O3 of High Breakdown Voltage GaN HEMT with Field-Plate Technology." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/10577731565006749369.

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碩士<br>長庚大學<br>電子工程學系<br>99<br>Gallium nitride is a binary III / V direct bandgap semiconductor. It’s wide band gap of 3.4 eV, high-power and high-frequency devices. GaN can work at much hotter temperatures and run at much higher voltages than gallium arsenide transistors. They are perfect materials for power amplifiers at microwave frequencies. The high breakdown is 140V of La2O3. On the other hand, Gmax is 132mS/mm of La2O3. The paper consists of several parts : introduction, analysis materials and current characteristic for oxide layers (Gd2O3/La2O3), electrostatic discharge test, and so on.
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Mor, Wang Jam, and 王智謀. "Preparation and application of rare earth (Nd2O3, Gd2O3) / titanium dioxide thin films." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/75766185243217593833.

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碩士<br>明新科技大學<br>化學工程與材料科技系碩士班<br>101<br>Industrial wastewater discharge in dyeing and finishing industry, The large amount of wastewater is not readily biodegradable and color removal, The textile processes after scouring, bleaching, mercerizing, printing and other processes of wastewater generated after dying, cause severe pollution to the environment. Therefore, this research was to simulate plant dye wastewater and to apply advanced oxidation process (Advanced Oxidation Processes; AOPs) by using two rare-earth oxides, for direct dye wastewater treatment. The first part of this study was TiO
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Tsai, P. J., and 蔡佩君. "Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/53131640837334294119.

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碩士<br>國立清華大學<br>材料科學工程學系<br>93<br>In this thesis, using Ga2O3(Gd2O3) as a gate dielectric, we have designed two different structures of depletion-mode(D-mode) GaAs MOSFET's, with GaAs and InGaAs/GaAs as channels. By changing the thickness of oxide, but retaining the same doping concentration, the effects of different channel design on device performance were investigated. Future work is being planned to to improve it. We have sucessfully fabricated D-mode Ga2O3(Gd2O3)/GaAs and Ga2O3(Gd2O3)/ In0.15Ga0.85As /GaAs MOSFET's. In addition, we have found out that a great improvement on device charac
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Mong-Chi, Hang. "Structure and Composition Analysis of MBE Grown Ga2O3(Gd2O3) thin films on Si." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0016-1303200709302967.

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37

Tseng, Chih-Kuo, and 曾治國. "The Electrical and Material Characteristics of Gd2O3 Gate Dielectric on Sulfided GaAs Substrate." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/77276161211926601611.

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38

Po-chuan, CHEN, and 陳柏全. "On The Fabrication Of GaAs-Gd2O3 MOS Capacitor And Its EIS Divice Application." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/76795088064898703726.

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碩士<br>長庚大學<br>光電工程研究所<br>95<br>The semiconductor GaAs device fabrication become critical due to the requirement for global communication industrial growth. Enhancement mode-GaAs MOSFETs have a lot advantages over other GaAs based depletion mode FETs such as MESFET. However, the issue of GaAs MOSFET is lack of reliable gate oxide layer. In this thesis, we fabricate GaAs Metal Oxide Semiconductor (MOS) capacitor and Extension Ion Sensitive Field Effective Transistor (EISFET) by using of rear-earth oxide as the gate dielectric. The correspondent device characteristics are analyzied. On the Gd2O3
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39

Lee, Chih-Hsun, and 李志勛. "Structural Investigation of Monoclinic Phase Gd2O3 Epitaxially grown on GaN (0001) by MBE." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/22028412484302897261.

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碩士<br>國立清華大學<br>材料科學工程學系<br>96<br>High-quality single-crystal Gd2O3 nano films have been grown epitaxially on GaN (0001). The films were electron beam evaporated from powder-packed and sintered Gd2O3 target at a substrate temperature of 700°C by molecular beam epitaxy (MBE). Structural studies were carried out by x-ray diffraction using a synchrotron radiation source, and cross sectional high-resolution transmission electron microscopy (HRTEM). The growth was in-situ monitored by reflection high energy electron diffraction. Electrical measurements of I-V and C-V characteristics were also carri
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40

Yu, Je-Yan. "Synthesis and Characterization of Gd2O3 doped CeO2 Fibers and (La, Sr)MnO3 Powders." 2008. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2507200815013700.

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溫延展. "Studies of Gd2O3：Eu-AP Nanoparticles for Trimodal MRI/CT/Fluorescence Molecular Imaging." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/94500413295674727734.

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碩士<br>國立臺灣師範大學<br>化學系<br>100<br>Recent nano-biomedicine have devote to research the topics for the development of single nano-materials possessing multifunctional properties. In this thesis, we synthesized the multifunctional europiumdoped gadolinium oxide ( Gd2O3:Eu ) nanoparticles which equipped with fluorescence, magnetic resonance signal and X-ray absorption. Then we applied the specific targeting aptamer encapsulated outside the nanoparticles for molecular imaging. First, Gd2O3:Eu nanoparticles were synthesized via the polyol method and were characterized based on TEM, XRD, UV-PL, SQ
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42

Yu, Je-Yan, and 游哲彥. "Synthesis and Characterization of Gd2O3 doped CeO2 Fibers and (La, Sr)MnO3 Powders." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/62348660328386116228.

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碩士<br>國立臺灣大學<br>材料科學與工程學研究所<br>96<br>This study, two components in solid oxide fuel cell (SOFC) and one cell were fabricated and analyzed. First, fibrous Gd2O3 doped ceria (GDC), which is the alternative material for electrolyte, was synthesized by chemical co-precipitate method. The chemical, growth and microstructural properties of the GDC fibers were characterized by scanning and transmission electron microscopies (SEM and TEM), differential thermogravimetry (DTA/TG), X-ray diffraction (XRD), and inductive coupling plasma-atomic emission spectroscopy (ICP-AES) technologies. The results of f
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43

Chiu, Yu-Sheng, and 邱昱盛. "The Gd2O3 thin films of high dielectric constant was sputtering and research characteristic." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/45808837706469354852.

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碩士<br>國防大學中正理工學院<br>電子工程研究所<br>96<br>The purposes of this thesis are to study the physical and electrical characteristics of MOS-Capacitor with high-κ gate oxide (Gd2O3). The Rare Earth metal–oxide (Gd2O3), that has high dielectric constant, was deposited by reactive RF-sputtering system. Gd2O3 thin films were also conferred by electro property and similar material property. Gd2O3 samples were analyzed and discussed by the following measurements : (1) C-V and I-V curves : extract dielectric constant, equivalent oxide thickness, leakage current, and breakdown voltage. (2) SEM : measure fil
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44

Liao, Kuo-Cheng, and 廖國成. "Ab-initio Study of GaN(0001)/Gd2O3(0001) and GaN(0001)/Sc2O3(111) Heterostructures." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/wf4vs6.

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碩士<br>國立中興大學<br>精密工程學系所<br>101<br>In this work, the heteroepitaxial growths of wurtzite GaN(0001) on hcp Gd2O3(0001) and cubic Sc2O3(111) substrates were studied by doing the first-principles calculations. For Ga-polar GaN grown on O-terminated Gd2O3 under Ga-rich and O-rich ambients, the interface energy of GaN(0001)/Gd2O3(0001) heterojunction would have a minimal value of −0.063 eV/A2 while N−Gd and Ga−O bonds are present in the interface structure. The strain relaxation on heteroepitaxial interface is induced by turning GaN into graphitic-like structure. The other half of this work indicate
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45

Tsai, Shang Yu, and 蔡尚育. "Fabrication ZnO transparent thin film transistor using high dielectric constant Gd2O3 as gate insulator." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/16333640452274744504.

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碩士<br>長庚大學<br>光電工程研究所<br>97<br>Abstract Developments of the transparent electronic circuits have been interested in most of researches to create new optoelectronic devices and applications. Among them the transparent field-effect transistor (FET) is a key device for realizing transparent circuits. Recently, transparent oxide semiconductors have emerged as promising materials for next generation thin film transistors (TFTs). ZnO, especially, has attracted much more attention with its advantages than other semiconductor materials because of its wide direct band gap of 3.4 eV, high transparency i
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Liu, Jian Hung, and 劉建宏. "Physical and Electrical Characteristics of High-k Gd2O3 and Ho2O3 for Amorphous-InGaZnO TFTs Applications." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/46954259843920792476.

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碩士<br>長庚大學<br>電子工程學系<br>101<br>With the development of display industry, there are tremendous requirements of thin-film transistors (TFTs) with good electrical stability and reliability. New materials are investigated to fulfill our demand in display industry. Among them oxide semiconductor materials, especially amorphous-InGaZnO (α-IGZO) is very promising due to its high mobility, good transparency, and wideband gap. In this thesis the physical and electrical characteristics of high-k Gd2O3 and Ho2O3 for α-IGZO TFTs are investigated. A detail fabrication process of high-k embedded amorphous-I
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47

Hsu, Ming-Kai, and 徐銘鍇. "Investigation of Ga2O3(Gd2O3)/GaAs/ In0.2Ga0.8As/GaAs Quantum Well with Different Annealing Temperatures Using Photoluminescence." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/35222265441990198486.

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碩士<br>國立中山大學<br>物理學系研究所<br>90<br>Abstract We discuss the PL spectra of Ga2O3(Gd2O3)/GaAs/In0.2Ga0.8As/GaAs quantum well with different annealing temperatures. First, we discuss the peak position of PL spectra. The peaks shift with different annealing temperatures, and it is due to the quantum well intermixing. Second, the excitation density dependence of In0.2Ga0.8As/GaAs quantum well is performed. We discuss the difference of 2D transition for quantum well and 3D transition for bulk GaAs.
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Lo, Ko-Ying, and 羅可瑩. "Structural and Optical Characterization of GaN deposited on (111) Si using Er2O3/Gd2O3 buffer layer." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/67795984819949776895.

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碩士<br>國立中興大學<br>物理學系所<br>102<br>The structural and optical characteristics of GaN film deposited on Er2O3/Gd2O3-coated (111) Si were studied using double-crystal x-ray rocking curve (DCXRC), high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) spectroscopy in this thesis. By comparing the DCXRC signals of (11 ¯02)GaN and (12 ¯12)GaN asymmetric planes and (0002) GaN symmetric plane, respectively, it was found that, most of the TDs in GaN of the GaN/ Er2O3/Gd2O3/(111)Si sample are type a TDs in nature. Based on the results of DCXRC studies, it is believed that the
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49

Huang, Tz An, and 黃子恩. "Characterization of Fluorine-Ion Implant Effects on LTPS TFTs with SiON and Gd2O3 Gate Dielectrics." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/38314715930227495749.

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碩士<br>長庚大學<br>光電工程研究所<br>96<br>For enhance of the driving current of LTPS TFTs, scaling down of the gate dielectric thickness is an effective method. Recently, several high-k materials have been investigated instead of conventional SiO2 gate dielectric to improve electrical characteristics. In this thesis, we proposed the high performance low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) integrated high-K SiON and Gd2O3 gate dielectric. However, poly-Si TFTs with high-k gate dielectric would suffer from a more undesirable gate-induced drain leakage (GIDL) issue. We
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50

Jian, De Yuan, and 簡德淵. "The Effect of Pt-Al Top Electrode and Al2O3 Interfacial Layer on Gd2O3 Resistive Switching Memory." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/00788299933479718301.

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碩士<br>長庚大學<br>電子工程學系<br>100<br>Recently, gadolinium oxide has been proposed to be applied in the resistive switching random-access memory (RRAM). It exhibits different resistive switching properties depending on the properties of electrodes. In this work, the characteristics of gadolinium oxide resistive switching memory with different component of Pt-Al alloy electrode and post-metallization annealing (PMA) were investigated. The current-voltage (I-V) characteristics demonstrate the bipolar resistance switching behavior of all samples. This can be responsible for the oxygen vacancies induced
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