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Dissertations / Theses on the topic 'Ge/GaAs'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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1

Hardingham, Christopher Mark. "GaAs and GaAs/Ge solar cells : a device and materials study using SEM-EBIC." Thesis, Imperial College London, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267028.

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2

North, Stephen Michael. "Electronic structure of GaSb/GaAs and Si/Ge quantum dots." Thesis, University of Newcastle Upon Tyne, 2001. http://hdl.handle.net/10443/551.

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There are significant differences between experiment and theoretical calculations of the electronic structure of GaSb/GaAs self-assembled quantum dots. Using a multi-band effective mass approximation it is shown that the influence of size and geometry of quantum dots has little or no effect in determining the hydrostatic strain. Furthermore, the valenceband ground state energies of the quantum dots studied are surprisingly consistent. This apparent paradox attributed to the influence of biaxial strain in shaping the heavy-hole and light-hole potentials. Consequently, it is shown that a simple,

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3

LEE, MAN GEUN. "Cellule tandem gaas-ge par depot epitaxial en phase vapeur." Nice, 1993. http://www.theses.fr/1993NICE4631.

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Parmi les tandems photovoltaiques solaires monolithiques a deux terminaux possibles, le tandem gaas-ge est interessant du point de vue de son rendement potentiel, mais aussi du point de vue des problemes de croissance qu'il pose. Il s'agit principalement de diminuer la diffusion d'as et de ga vers ge. Pour cela nous avons propose de tirer parti du fait que ge peut etre epitaxie a plus basse temperature que gaas. Un banc d'epitaxie en phase vapeur a ete construit avec, comme precurseurs, geh4 pour ge, ash3 (11 ppm dans he) pour le dopage n, b2h6 (50 ppm dans he) pour le dopage p. Le reacteur ve

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4

Ma, Penghui. "The growth of ultrathin ferromagnetic structures on Ge(100) and sulphur passivated Ge(100) and GaAs(100) surfaces." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape15/PQDD_0014/NQ32319.pdf.

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5

Radulescu, Fabian. "Pd-Ge ohmic contact on to GaAs formed by the solid phase epitaxy of Ge : a microstructure study /." Full text open access at:, 2000. http://content.ohsu.edu/u?/etd,226.

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6

Kholevchuk, V. V., V. P. Kladko, A. V. Kuchuk, P. M. Lytvyn, L. A. Matveeva, and V. F. Mitin. "Study of Structure and Intrinsic Stresses of Ge Thin Films on GaAs." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35310.

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The effect of film growth rate on the structure and intrinsic stresses of thin (100 nm) Ge films grown on GaAs(100) substrates was investigate by High Resolution X-Ray Diffraction (HRXRD). The Ge films were deposited onto GaAs using thermal evaporation of Ge in the vacuum. It was shown that pseudomor-phic films with good structural quality can be obtained by this growth technique. We found out that the films have biaxial deformations due to coherent interface and Poisson ratio. The films are elastically com-pressed in the interface and stretched in the perpendicular [001] direction. The intrin

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7

Bélanger, Simon. "Croissance épitaxiale de GaAs sur substrats de Ge par épitaxie par faisceaux chimiques." Mémoire, Université de Sherbrooke, 2010. http://savoirs.usherbrooke.ca/handle/11143/1561.

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La situation énergétique et les enjeux environnementaux auxquels la société est confrontée entraînent un intérêt grandissant pour la production d'électricité à partir de l'énergie solaire. Parmi les technologies actuellement disponibles, la filière du photovoltaïque à concentrateur solaire (CPV pour concentrator photovoltaics) possède un rendement supérieur et un potentiel intéressant à condition que ses coûts de production soient compétitifs.La méthode d'épitaxie par faisceaux chimiques (CBE pour chemical beam epitaxy) possède plusieurs caractéristiques qui la rendent intéressante pour la pro

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8

Mitin, V. F., P. M. Lytvyn, V. V. Kholevchuk, et al. "Ge/GaAs(100) Thin Films: Large Effect of Film Growth Rate and Thicknesses on Surface Morphology, Intrinsic Stresses and Electrical Properties." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35066.

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We found out and studied a profound effect of film growth rate on the electrical properties, intrinsic stresses and surface morphology of thin Ge films grown on GaAs(100). This effect is essential and has to be accounted for when developing and producing devices based on the Ge/GaAs heterostructure. All the Ge films under investigation were single-crystalline and epitaxially-grown on the GaAs(100) substrates. However, the transport phenomena in Ge films grown at low and high deposition rate differed drastically. Those obtained at low deposition rate were p-type and high resistant. They ha

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9

Lin, Liang. "Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609643.

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10

GUITA, SADREDDINE. "Etude des distributions electroniques des semiconducteurs amorphes et cristallises gaas et ge#1##*se#*." Paris 6, 1989. http://www.theses.fr/1989PA066220.

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Nos resultats experimentaux ont ete obtenus par spectroscopie de photoabsorption x ce qui a permis d'analyser les distributions electroniques inoccupees a caracteres de ga, as, ge et se dans les alliages amorphes gaas et ge#1##xse#x. Dans le semiconducteur gaas amorphe ou cristallise, nous avons montre que les etats de bord de bande de conduction sont des etats du gallium. Ces etats sont a caractere hybride sp. L'hybridation est moins forte dans a-gaas que dans le compose cristallise par suite d'une delocalisation des etats electroniques autour de ga dans l'amorphe. Nous avons montre que le de

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11

Miwa, Roberto Hiroki. "Adsorção de moléculas de As2 sobre as superfícies de GaAs (001): {Te, Se e S} e a formação das interfaces GaAs/Te/InAs e GaAs/Si(Ge) /AlAs." Universidade de São Paulo, 1997. http://www.teses.usp.br/teses/disponiveis/43/43133/tde-02072013-151151/.

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Neste trabalho apresentamos um estudo teórico da ação surfactante do Te no crescimento epitaxial do InAs sobre o GaAs (001). Os cálculos foram feitos dentro da teoria do funcional densidade com a aproximação de densidade local, e utilizando-se pseudopotenciais ab initio com conservação da norma. Os resultados indicam que a interdifusão do Te, para a superfície de crescimento, reduz a energia livre do sistema, o que está de acordo com a ação surfactante do Te. Porém verificamos, baseado num processo de troca As <-> Te entre primeiros vizinhos, que parte do Te fica preso na interface GaAs/In-As,

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12

J, Boeckl John. "Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates." Connect to this title online, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1116498970.

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Thesis (Ph. D.)--Ohio State University, 2005.<br>Title from first page of PDF file. Document formatted into pages; contains xxii, 212 p.; also includes graphics. Includes bibliographical references (p. 203-212). Available online via OhioLINK's ETD Center

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Boeckl, John J. "Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates." The Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970.

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14

Coste, Marie. "Intégration hétérogène de GaAs sur Si à partir de nano-germes : étude de la nucléation et de la croissance de micro-cristaux sur substrats Si (001) et (111)." Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS578/document.

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L’intégration du GaAs sur Si est un des défis majeurs des 40 dernières années puisqu’elle permettrait de combiner les nombreux avantages du Si, dont notamment son bas coût, avec les propriétés de haute mobilité et de gap direct du GaAs. Les cellules photovoltaïques multi-jonctions à base de matériau III-V permettent d’obtenir les plus hauts rendements de conversion photovoltaïque. Cependant, leur coût de fabrication élevé est un aspect limitatif de leur utilisation. Nous nous sommes intéressés ici à une étude préliminaire visant à réaliser leur intégration sur substrat Si. In fine, l’objectif

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15

Nigam, Mohit. "The Stopping of Energetic Si, P and S Ions in Ni, Cu, Ge and GaAs Targets." Thesis, University of North Texas, 2001. https://digital.library.unt.edu/ark:/67531/metadc3004/.

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Accurate knowledge of stopping powers is essential for these for quantitative analysis and surface characterization of thin films using ion beam analysis (IBA). These values are also of interest in radiobiology and radiotherapy, and in ion- implantation technology where shrinking feature sizes puts high demands on the accuracy of range calculations. A theory that predicts stopping powers and ranges for all projectile-target combinations is needed. The most important database used to report the stopping powers is the SRIM/TRIM program developed by Ziegler and coworkers. However, other researche

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16

Yu, Ing-Song. "Étude des propriétés des magnétotransport de (Ge, Mn) : semiconducteur ferromagnétique sur GaAs (001) pour l'électronique de spin." Grenoble, 2010. http://www.theses.fr/2010GRENY027.

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"En utilisant l'épitaxie par jets moléculaires à basse température. DOUS avons élaboré des couches de (Ge,Mn), contenant des nanœstructure ferromagnétiques, sur deux types de substrats GaAs d'orienlation (001): des substrats GaAs" epiready,. (échantillons" Ga-GeMn "), et des substral1; encapsulés par de l'arsenic amorpbe(échantillons " As--GeMn »). Dans les échantillons Ga-OeMn. Nous obtenons la formation de nanocolonnes riches en Mn: celles-ci sont parallèles entre elles, ou enchevétrées, suivant la morphologie de surface initiale. Les mesures de magnétométrie tévèlentdeux phases magnétiques:

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17

Cariou, Romain. "Epitaxial growth of Si(Ge) materials on Si and GaAs by low temperature PECVD: towards tandem devices." Palaiseau, Ecole polytechnique, 2014. https://theses.hal.science/tel-01113794/document.

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Cette thèse s'intéresse à la croissance épitaxiale de Si et SiGe à basse température (200°C) par dépôt chimique en phase vapeur assistée par plasma (PECVD), et à l'utilisation de ces matériaux cristallins dans les cellules solaires en couches minces. L'objectif était de mieux comprendre cette croissance inattendue et d'étudier le potentiel de ces matériaux pour les cellules simples et multijonctions. Nous avons d'abord démontré qu'il est possible d'effectuer, avec un réacteur PECVD standard, un nettoyage efficace de la surface du c-Si et de poursuivre par une croissance épitaxiale de couches d

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18

Melhem, Hassan. "Epitaxial Growth of Hexagonal Ge Planar Layers on Non-Polar Wurtzite Substrates." Electronic Thesis or Diss., université Paris-Saclay, 2025. http://www.theses.fr/2025UPAST011.

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Le silicium et le germanium, qui cristallisent dans la structure cubique du diamant (notée 3C), ont été les piliers de l'industrie électronique grâce à leurs propriétés intrinsèques. Néanmoins, l'ingénierie des phases cristallines métastables a émergé comme une méthode puissante pour ajuster les structures de bande électronique, ouvrant la voie à de nouvelles fonctionnalités tout en maintenant une compatibilité chimique. Notamment, le Ge dans la phase hexagonale 2H présente un gap direct de 0,38 eV. L'alliage SixGe(1-x)-2H présente une émission lumineuse intense avec une longueur d'onde modula

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19

Gao, Kun. "Highly Mismatched GaAs(1-x)N(x) and Ge(1-x)Sn(x) Alloys Prepared by Ion Implantation and Ultrashort Annealing." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-158921.

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Doping allows us to modify semiconductor materials for desired properties such as conductivity, bandgap, and / or lattice parameter. A small portion replacement of the highly mismatched isoelectronic dopants with the host atoms of a semiconductor can result in drastic variation of its structural, optical, and / or electronic properties. Here, the term "mismatch" describes the properties of atom size, ionicity, and / or electronegativity. This thesis presents the fabrication of two kinds of highly mismatched semiconductor alloys, i.e., Ge(1-x)Sn(x) and GaAs(1-x)N(x). The structural and optical

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20

Chriqui, Yves. "Intégration monolithique sur silicium d'émetteurs de lumière à base de GaAs par épitaxie en phase vapeur aux organométalliques sur pseudo-substrat de Ge/Si." Phd thesis, Université Pierre et Marie Curie - Paris VI, 2004. http://tel.archives-ouvertes.fr/tel-00008758.

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L'intégration monolithique de GaAs sur Si permettrait la réalisation de sources de lumière sur Si pour des applications notamment dans les interconnexions optiques ou les cellules solaires à haut rendement et faible coût. Toutefois, les différences intrinsèques entre les deux matériaux conduisent à l'apparition de défauts dans la couche de GaAs (dislocations, fissures, parois d'inversion). Nous démontrons que l'utilisation de pseudo-substrats, constitués d'une couche tampon de Ge sur un substrat de Si, combinée à l'insertion d'un super-réseau par épitaxie par couche atomique (ALE) en début de

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21

Woods, Michael D. "A comparative analysis of radiation effects on silicon, gallium arsenide, and GaInP2/GaAs/Ge triple junction solar cells using a 30 MeV electron linear accelerator." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion/02Sep%5FWoods.pdf.

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22

Pelati, Daniel. "Elaboration of GaAs solar cells based on textured substrates on glass." Electronic Thesis or Diss., Sorbonne université, 2019. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2019SORUS456.pdf.

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Les cellules solaires à base de GaAs détiennent le record d’efficacité pour les architectures à simple jonction, mais le coût des substrats GaAs monocristallins restreint fortement leur utilisation. Dans ce travail, nous avons fabriqué des substrats alternatifs pour la croissance de GaAs, basés sur la combinaison d’un support en silice et d’un film mince (20 nm) de Germanium. Ce dernier est presque à l’accord de maille avec le GaAs et on peut obtenir une texture (111) prononcée en utilisant le procédé de cristallisation induite par un métal (MIC). La texture cristalline est très dépendante des

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23

Jain, Nikhil. "Heterogeneous Integration of III-V Multijunction Solar Cells on Si Substrate: Cell Design and Modeling, Epitaxial Growth and Fabrication." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/52045.

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Achieving high efficiency solar cells and concurrently driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at approximately 1% (absolute) increase per year, with a recent record efficiency of 46%. However, the expensive cost has made it challenging for the high efficiency III-V solar cells to compete with the mains

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24

Gao, Kun [Verfasser], Manfred [Akademischer Betreuer] Helm, and Georgeta [Akademischer Betreuer] Salvan. "Highly Mismatched GaAs(1-x)N(x) and Ge(1-x)Sn(x) Alloys Prepared by Ion Implantation and Ultrashort Annealing / Kun Gao. Gutachter: Manfred Helm ; Georgeta Salvan. Betreuer: Manfred Helm." Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://d-nb.info/1069092568/34.

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25

James, Daniel. "Fabrication and electrical characterisation of quantum dots : uniform size distributions and the observation of unusual electrical characteristics and metastability." Thesis, University of Manchester, 2010. https://www.research.manchester.ac.uk/portal/en/theses/fabrication-and-electrical-characterisation-of-quantum-dots-uniform-size-distributions-and-the-observation-of-unusual-electrical-characteristics-and-metastability(01bb9182-5290-4ad1-b6a4-3aed3970dbcf).html.

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Quantum dots (QDs) are a semiconductor nanostructure in which a small island of one type of semiconductor material is contained within a larger bulk of a different one. These structure are interesting for a wide range of applications, including highly efficient LASERs, high-density novel memory devices, quantum computing and more. In order to understand the nature of QDs, electrical characterisation techniques such as capacitance-voltage (CV) profiling and deep-level transient spectroscopy (DLTS) are used to probe the nature of the carrier capture and emission processes. This is limited, howev

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26

Cheng, Jun. "Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins." Phd thesis, Ecole Centrale de Lyon, 2010. http://tel.archives-ouvertes.fr/tel-00565337.

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L'intégration monolithique de matériaux III-V ou Ge sur Si est un enjeu majeur de l'hétéroépitaxie qui a donné lieu à de nombreuses recherches depuis plus de vingt ans. Car premièrement, il permet de combiner des fonctionnalités optoélectroniques au standard industriel CMOS, cela peut remplacer des interconnexions métalliques par des interconnexions optiques dans lescircuits intégrés. De plus, le procédé d'intégration de semiconducteurs III-V ou de Ge sur Si permettrait de réduire sensiblement le coût de fabrication des cellules solaire pour le marché de niche du spatial.L'hétéroépitaxie direc

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27

Chang, Sheng-Chieh, and 張勝傑. "Interface morphology and electrical properties of bonded GaAs/GaAs and GaAs/Ge wafers." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/40430460375237600540.

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碩士<br>國立交通大學<br>材料科學與工程系所<br>98<br>The study of III-V materials has played an important role in semiconductor industry recrntly. GaAs material has varies outstanding advantages such as direct bandgap, high efficiency, radiation resistant, high temperature resistant and so on. Different types of semiconductor materials such as P or N-type gallium arsenide have their own energy gaps, electron and hole mobilities, resistivities and other physical properties of materials. These properties of GaAs material have attracted much interest for optoelectronic semiconductor device, high speed electronics

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We, Yu-Rue, and 吳育儒. "The Study of GaAs/Ge Solar Cell --Using the Atomic Layer Epitaxy Method to Grow Passive GaAs/Ge interface." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/84574982231403218576.

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碩士<br>國立交通大學<br>電子物理學系<br>82<br>For spacecraft power generation, GaAs solar cells have the advantage of high conversion efficiency and high radiation and temperature tolerance. But GaAs solar cells have several drawbacks such as material cost ,fragility and weight. Germanium has been proposed as an alternative, robust and cheap substrate for MOVPE. In fact , Ge provides a good lattice match with GaAs and large-area slices are available. Extra photovoltage can be generated at the GaAs/Ge int

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Ko, Yu-Chun, and 柯宇駿. "Diffusion Analysis of Vapor-Phase Ge in GaAs." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/3k3rs8.

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Chang, Hung, and 張弘. "Studies on Photovoltaic Properties of Ge-Subcell in InGaP-GaAs-Ge Multijunction Solar Cells." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/93agq4.

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碩士<br>國立臺灣海洋大學<br>電機工程學系<br>102<br>The purpose of this thesis, we study compound semiconductor based of the triple-junction solar cell. First, we fabricated the Ge-subcell and we have successfully fabricated single-, double-, triple-junction solar cells. We use the origin overall InGaP-InGaAs-Ge structure to fabricate all junction-type solar cells. The main feature in fabrication of the Ge-subcell is to reserve semiconductor layers of forming the InGaP-subcell and the InGaAs-subcell. Finally we used the solar simulator to perform the temperature dependences of various photovoltaic parameters o

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WU, SHENG-YUAN, and 吳勝源. "Au-Ge-Pt and Au-Ge-Cr Ohmic contact on GaAs/AlGaAs MODFET structure." Thesis, 1990. http://ndltd.ncl.edu.tw/handle/91685077741698749957.

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Schricker, April Dawn. "Electrical properties of single GaAs, Bi₂S₃ and Ge nanowires." Thesis, 2005. http://hdl.handle.net/2152/2301.

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Kuo, Chun-Yu, and 郭俊佑. "Study of High Quality Ge Epitaxial Film on GaAs Substrate." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/38559496896797153941.

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碩士<br>國立交通大學<br>材料科學與工程學系<br>100<br>The practice of scaling in microelectronics has allowed constant improvements in the cost, performance, and functionality of Si-based integrated circuits. However, as feature size is below 100nm, the performance improvement attribute to scaling is diminished. At first, the gate leakage current increases through ultra-thin SiO2. Secondly, channel mobility is degraded in the high electrical field. III-V compounds have attracted lots of attention because of their high electron mobility. However, III-V materials still suffer from low hole mobility, and it is ver

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Sheng, Jhih-Syuan, and 盛致璿. "Study of Solar Cells Based on Ge and GaAs Materials." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/46845895572262126050.

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碩士<br>高雄師範大學<br>物理學系<br>98<br>Study of Solar Cells Based on Ge and GaAs Materials Jhih-Syuan Sheng* Jung-Hui Tsai** Department of Physics, National Kaohsiung Normal University, Kaohsiung, Taiwan, R.O.C Abstract In this thesis, we simulated and analyze two kinds of homojunction solar cells based on Ge and GaAs materials by the SILVACO simulation program. First, we consider the characteristics of Ge homojunction solar cells with different emitter concentrations. η increases from 5.48 % to 8.64 % when the concentration is increased from 2 x 1016 to 2 x 1019 cm-3 and become saturated at 9.2

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Shie, Sheng-Li, and 謝勝禮. "Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/53515001260697704178.

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碩士<br>國立交通大學<br>材料科學與工程系所<br>97<br>The Pd/Ge/Cu ohmic contacts to n-type InGaAs is investigated. The Au-free fully Cu-metallized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type InGaAs also has been successfully fabricated for the first time. Low specific contact resistivity of 1x10-6 Ω-cm2 was achieved at a low annealing temperature (250 °C). The ohmic contact formation mechanisms and microstructure evolution were investigated using x-ray diffraction (XRD), Auger electron spectroscopy (AES) depth profiles, transmission electron microscopy (TEM) and energy dispersive spectrometer (ED

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畢無量. "Numerical Studies on In0.49Ga0.51P/GaAs/Ge Triple-junction Tandem Solar Cell." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/78827551651457774333.

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碩士<br>國立彰化師範大學<br>光電科技研究所<br>97<br>The energy crisis causes the development of renewable energy to replace the rock oil energy. The solar energy is a distinguished renewable energy because it is in great demand at present. The multi-junction tandem solar cell has the highest energy onversion efficiency among all kinds of solar cells. Therefore, it is an appropriate topic for research. A tandem solar cell is composed of several single-junction solar cells with materials of different band-gaps. The open circuit voltage of a tandem solar cell is approximately the sum of the open circuit voltages

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Yu, Ing-Song, and 余英松. "Magnetotransport properties of (Ge,Mn) ferromagnetic semiconductor grown on GaAs(001)." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/22205939422743764778.

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博士<br>國立臺灣大學<br>電子工程學研究所<br>98<br>By low temperature Molecular Beam Epitaxy (MBE), (Ge,Mn) thin films with ferromagnetic nanostructures are grown on two kind of GaAs substrates: epiready GaAs(001) (Ga-GeMn) and GaAs(001) with amorphous As capping layer (As-GeMn). In the Ga-GeMn samples, we observe self-organized Mn-rich nanocolumns which, depending on the initial surface morphology, are either parallel or entangled. Magnetic measurements evidence two magnetic phases: ferromagnetic nanocolumns with Curie temperature around 150K, and the Ge matrix made paramagnetic by diluted Mn. From measuremen

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Hung, Wei-Cheng, and 洪偉誠. "Epitaxy of GaAs on Rapid-Melt-Growth Ge on Silicon Substrate." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/28185945952480569478.

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碩士<br>國立清華大學<br>光電工程研究所<br>101<br>GaAs/Si integration receives a lot of attention for both electronic and photonic devices. For example, GaAs/Si-based III-V QWFET and III-V lasers have been demonstrated with superior performances. However, pure GaAs grown on Si is critical due to the lattice mismatch (4%) between these two semiconductors as well as different thermal expansion coefficients. Direct wafer or die bonding of GaAs onto Si wafers is the way that can integrate GaAs on Si. However, removing the bonded substrates could be a waste of material. Furthermore, surface topography between the

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Han, Tsung-Yu, and 韓宗佑. "Fabrication of GaAs channel MOSFETs with Hetero-Epitaxial Ge Source/Drain." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/c9sd59.

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碩士<br>國立交通大學<br>電子研究所<br>106<br>In this thesis, we had optimized the hetero-epitaxy of Ge on GaAs surface by systematically investigated the effects of substrate orientation and surface preparation. Hence, we proposed a new structure of GaAs MOSFET having Ge source/drain (S/D) to tackle the intrinsic issues of the low solid solubility of dopants and low density of states (DOS) in GaAs material and also possess high electron mobility and thermal velocity to boost the current drive capability, compared to conventional Si MOSFETs. To achieve high quality Ge epitaxy of recessed S/D region, the eff

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Lin, Chia-Ching, and 林家慶. "Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/27606966960858836731.

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碩士<br>國立交通大學<br>材料科學與工程系所<br>94<br>In this study, a low contact resistivity Pd/Ge/Cu ohmic contact to n-type GaAs has been successfully developed. The Au-free fully Cu-metallized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs also has been successfully fabricated for the first time. The Pd (150 Å)/Ge (1500 Å)/Cu (1500 Å) ohmic contact exhibits a very low contact resistivity of 5.73 x 10-7 Ω-cm2 at a low annealing temperature (250 °C). The ohmic contact formation mechanisms and microstructure evolution were investigated using x-ray diffraction (XRD), secondary ion mass spectrom

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Chang, Yu-Chi, and 張聿騏. "Studies on the Optical Properties of Ordered InGaP/Ge and InGaP/GaAs." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/54602766772291131532.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>101<br>This thesis investigate the optical characteristics of ordered InGaP/Ge and InGaP/GaAs grown by metal-organic chemical vapor epitaxy.In the first part we discuss the origins of dual PL peak in the InGaP/Ge by etching the half of the sample and measuring PL spectroscopy and Raman scattering. We indicate that the different energy PL peaks are attributed to different degree of order in the upper and lower epilayer. The difference of degree of order in epilayer is due to Ge diffusion from the substrate into the InGaP at the heterointerface between the two materia

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Cheng, Yung-Chao, and 鄭勇釗. "Optimization and fabrication of triple junction InGaP/GaAs/Ge tandem solar cell." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/46700377099448305636.

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碩士<br>元智大學<br>光電工程研究所<br>99<br>This study is about the important field of energy development-solar cell. Solar cell is varied, among them the multi-junction tandem solar cell is the most efficient. This thesis investigates the research and fabrication of triple-junction tandem Ⅲ-Ⅴ compounds solar cells. The main topic is substitute of current single or multi-junction anti-reflection layer, and reduces the cost of fabrication. The surface of device adopts novel nano-imprint approach for Sub-wavelength Structure. And we simulate the best depth of etching with APSYS, software for optical properti

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Chung, Hung-Chin, and 鍾鴻欽. "Microstructure and physical properties of Ge/Si and InAs/GaAs quantum dots." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/24030155364497721047.

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博士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>96<br>This dissertation explores the microstructure and physical properties of Ge/Si and InAs/GaAs quantum dots. We have investigated the microstructures and growth mechanism of the self-assembled Ge quantum dots by high resolution transmission electron microscopy (HRTEM) and atomic force microscopy (AFM). The electrical properties of the samples were investigated by conductive-AFM. In addition, we have investigated the chemical composition and optical properties of InAs/GaAs quantum dots. The main focus of this dissertation can be divided into four parts. Firs

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Chung, Chen-Chen, and 鍾珍珍. "Investigations of Efficiency Improvement on InGaP/GaAs/Ge Triple-Junction Solar Cell." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/31551369230813256892.

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博士<br>國立交通大學<br>材料科學與工程學系所<br>103<br>Solar cell is a photovoltaic device designed to convert sunlight into electrical power, solar energy benefits have been constaulty discussed, such as inexhaustibility, safety, convenience, non-polluting, and high practicality, etc. Due to these characteristics, solar energy plays an important role on the recycled research. III-V solar cell is known to hance super-high efficiency and radiation damage resistant is now used for space application. The production cost of III-V materials is higher than that of Si solar cells. We study the novel materials, news pr

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Yang, Chih-Chao, and 楊智超. "Study of Pd/Au Ohmic Contact on P-Type Ge and Its Application to GaAs/Ge Dual-Junction Solar Cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/30881542969581694603.

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碩士<br>中原大學<br>電子工程研究所<br>99<br>Abstract In this dissertation, we discussed the effects of thickness Pd on the Pd / Au and Pd / Ag / Au ohmic contact metallurgical structure deposited on P-Ge material. At first ,we studied the optimum thickness of the Pd layer and the suitable annealing temperature and time for obtaining the lowest specific contact resistance ρc on P-Ge by transmission line model method (TLM).We found out that the optimum metallurgical structure is Pd (30 nm) / Au (60 nm) after annealed at 350 ℃ for 2 minutes. The lowest value ρc=6×10-6 Ω-cm2 of specific contact resistance

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Jung-Ting, Chang, and 張榮庭. "Study of Atomic-Layer-Epitaxy Controlled MOCVD GaAs Epi-layer on Ge Substrate." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/19240612958150924137.

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碩士<br>國立交通大學<br>工學院半導體材料與製程設備學程<br>100<br>GaAs epitaxy, as nucleation layer, is grown on Ge substrate using ALE technique (Atomic Layer Epitaxy). According our study, triangle defects are formed on the surface of (In)GaAs/Ge due to lower decomposition rate of TMGa at low growth temperature (415°C). For ALE technique, the multilayer consisted of 10 pairs of Ga and As layers can improve epitaxial quality (15 arcsec) and surface morphology (1.22nm) of (In)GaAs/Ge heterostructure at 420°C. The growth temperature of 420°C is also adopted to suppress unwanted interdiffusion during (In)GaAs/Ge hetero

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Wu, Chung-Hsien, and 吳崇賢. "Performance Investigation of Sub-Cells in InGaP/GaAs/Ge Triple-Junction Solar Cells." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/23276504555536741375.

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碩士<br>國立臺灣海洋大學<br>電機工程學系<br>96<br>In this thesis, we demonstrate that a novel triple-junction solar cell structure, using the materials of Ge, GaAs and InGaP from bottom to top, simultaneously obtains three sets of pn junction to form the three sub-solar-cell with series shunt. In addition, the model of energy conversion efficiency has also been presented. According to tune the open circuit voltage and short circuit current every sub-solar-cell to find out the influence of output characteristics and the suitable operation point, we successfully solved the current mismatch owing to three sub-so

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SHI, XUE-HAO, and 施學浩. "The Au/Ni(Pd)/Ge/n-GaAs ohmic contact behavior at low temperature." Thesis, 1991. http://ndltd.ncl.edu.tw/handle/31481933563670028003.

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Yang, Yuan-Cheng, and 楊元成. "Micro-Patterned Low Temperature Ge on Si substrate for High Quality GaAs Growth." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/77221754298868157845.

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碩士<br>國立交通大學<br>照明與能源光電研究所<br>101<br>Moore’s law predicts when the device is scaling down below 100 nm, the performance of Si device reaches its limitation. In the same time, the outstanding features of III-V materials higher electron mobility will play a major role along with Si in future high speed devices. In order to reduce the manufacturing costs, a heterogeneous integration of III/V compound materials (ex: GaAs) with Si platform is necessary. In literature, the high quality GeAs epilayers can be grown on Si substrate by using Ge as the buffer layer. The reason of using Ge as the buffer l

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Fang, Ching-Chih, and 方勁智. "Investigation on optoelectronic characteristics of GaAs/SiO2/Ge heterostructure prepared by RF magnetron sputtering." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/m427f6.

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碩士<br>國立臺北科技大學<br>光電工程系研究所<br>102<br>In this work, a SiO2 buffer layer was first grown on Ge substrate, and then GaAs thin films were deposited on SiO2 buffer layer and Ge substrate by RF magnetron Sputter. Next, the sample is examined by Transsmittance Spectrum、Scanning Electron Microscope（SEM）、X-ray Diffractometer（XRD）、Raman Spectrum. The analysis of X-ray diffraction showed that all the GaAs thin films with and without SiO2 had a zinc blende structure. The optoelectronic characteristics of GaAs/SiO2/Ge heterostructure were investigated. The experiment focuses on three parts, one through th

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