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Journal articles on the topic 'Ge/GaAs'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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1

Jones, K. M., M. M. Al-Jassim, and J. M. Olson. "Tem Observations of Interfacial Defects in Mocvd GaAs on Single Crystal Ge Substrates." Microscopy and Microanalysis 4, S2 (1998): 626–27. http://dx.doi.org/10.1017/s1431927600023254.

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The growth of high quality GaAs layers on single crystal Ge substrates has attracted a great deal of interest in recent years. Currently under development at NREL is the GaAs/GalnP-on-Ge high efficiency multi-junction solar cell. Unlike other heteroepitaxial systems such as GaAs-on-Si, physical properties such as the lattice parameter and thermal expansion coefficient of the Ge and GaAs are much closer. Further, Ge has a bandgap of 0.7 eV that makes it a suitable bottom cell in a multi-junction stack. However, the growth of GaAs on Ge is not a straightforward process, and little is known about

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2

Lalande, G., N. Guelton, D. Cossement, R. G. Saint-Jacques, and J. P. Dodelet. "Optimum growth conditions for the epitaxy of GaAs on Ge by close-spaced vapor transport." Canadian Journal of Physics 72, no. 5-6 (1994): 225–32. http://dx.doi.org/10.1139/p94-034.

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GaAs epitaxial layers are grown by close-spaced vapor transport (CSVT) on (100)Ge substrates and (100)Ge substrates misoriented 1.5° and 3° toward (011). Water vapor is used as the transport agent. When the temperatures of the GaAs source (T1) and of the Ge substrate (T2) are 800 and 750 °C, respectively, the growth rate is about 3 μm h−1. When an optimum source–substrate temperature evolution is followed, it is possible to grow specular layers of GaAs/Ge that contain only a small number (< 105 cm−2) of threading dislocations. All antiphase boundaries (APBs) annihilate close to the interfac

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3

Kavanagh, L., and Charles W. Magee. "Diffusion of Ge in GaAs at SiO2-encapsulated Ge–GaAs interfaces." Canadian Journal of Physics 65, no. 8 (1987): 987–90. http://dx.doi.org/10.1139/p87-157.

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The diffusion of Ge in semi-insulating GaAs was investigated for annealing temperatures in the range 650–800 °C. The samples consisted of electron-beam or metalorganic chemical-vapour deposition deposited Ge–GaAs interfaces encapsulated with SiO2. Ge diffusion profiles, measured with secondary-ion mass spectroscopy (SIMS), had a characteristic plateau and steep slope at the diffusion front, similar to those obtained for Si and Sn diffusion at SiO2-encapsulated GaAs. A saturated-surface concentration of 2 × 1019 atoms∙cm−3 was observed for anneals above 750 °C, likely the solid solubility of Ge

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4

Kuo, Wei-Cheng, Hung-Chi Hsieh, Wu Chih-Hung, Huang Wen-Hsiang, Chien-Chieh Lee, and Jenq-Yang Chang. "High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer." International Journal of Photoenergy 2016 (2016): 1–5. http://dx.doi.org/10.1155/2016/7218310.

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We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low growth temperature (180°C). The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD) and spectroscopy ellipsometry (SE). The full width at half maximum (FWHM) of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmi

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5

Dalapati, Goutam Kumar, Avishek Kumar, Andrew See Weng Wong, et al. "Sputter-Deposited ZrO₂ Gate Dielectric on High Mobility Epitaxial-GaAs/Ge Channel Material for Advanced CMOS Applications." Key Engineering Materials 443 (June 2010): 504–9. http://dx.doi.org/10.4028/www.scientific.net/kem.443.504.

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Sputtered-deposited ZrO2 gate dielectric on epitaxial-GaAs/Ge substrates have been studied for complementary-metal-oxide-semiconductor (CMOS) applications. The epitaxial-GaAs (epi-GaAs) on Ge susbstrates with AlGaAs interlayer was grown by metal-organic chemical vapor deposition at 650oC. High resolution transmission electron microscopy ((HRTEM) shows that the epilayers are free from arsenic anti-phase defects (APD). From secondary ion mass spectrometry, it was confirmed that the Ge diffusion is completely blocked by the AlGaAs layer and no Ge atoms are able to penetrate into the GaAs layer. T

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6

GASPARYAN, FERDINAND, and SVETLANA VITUSEVICH. "MILLIMETER WAVE DETECTORS DEVELOPED ON THE BASIS OF DOPED SEMICONDUCTORS." Modern Physics Letters B 28, no. 01 (2013): 1450001. http://dx.doi.org/10.1142/s0217984914500018.

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Semiconductor p-i-n structure with long i-base region doped with shallow donors/acceptors can be successfully used and have significant advantages in millimeter wave range as cooling THz receivers. It is shown that such detectors working in double current injection mode can have high current photosensitivity and detectivity, linear dependencies of sensitivity versus wavelength and applied voltage. Simulation results can be successfully used for detectors fabricated on the basis of several semiconductors: Si : Li , Si : O , Ge : B , Ge : Al , Ge : Ti , Ge : Be , Ge : P , Ge : As , Ge : Sb , GaA

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7

Aboelfotoh, M. O., S. Oktyabrsky, J. Narayan, and J. M. Woodall. "Electrical and microstructural characteristics of Ge/Cu ohmic contacts to n-type GaAs." Journal of Materials Research 12, no. 9 (1997): 2325–31. http://dx.doi.org/10.1557/jmr.1997.0308.

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It is shown that Cu–Ge alloys prepared by depositing sequentially Cu and Ge layers onto GaAs substrates at room temperature followed by annealing at 400 °C form a low-resistance ohmic contact to n-type GaAs over a wide range of Ge concentration that extends from 15 to 40 at. %. The contacts exhibit a specific contact resistivity of 7 × 10−7 Ω cm2 on n-type GaAs with doping concentrations of 1 × 1017 cm−3. The contact resistivity is unaffected by varying the Ge concentration in the range studied and is not influenced by the deposition sequence of the Cu and Ge layers. Cross-sectional high-resol

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8

Wangila, Emmanuel, Calbi Gunder, Petro M. Lytvyn, et al. "The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire." Crystals 14, no. 5 (2024): 414. http://dx.doi.org/10.3390/cryst14050414.

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Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were investigated by in situ and ex situ characterization techniques to ascertain the surface morphology, crystal structure, and quality. The growth mode of Ge on GaAs was predominantly two-dimensional (2D), which signifies a layer-by-layer deposition, contributing to enhanced crystal quality in the Ge/GaAs system. The growth of Ge1−xSnx with 10% Sn on a graded

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9

Moore, W. T., R. L. S. Devine, P. Maigné, et al. "The growth of gallium arsenide on Si(100) by molecular-beam epitaxy." Canadian Journal of Physics 65, no. 8 (1987): 904–8. http://dx.doi.org/10.1139/p87-141.

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The growth of GaAs on Si(100) directly and with Ge buffer layers has been carried out sequentially under ultra high vacuum conditions in a double-ended III–V and group IV molecular beam epitaxy system. These heterostructures were examined by cross-section transverse emission microscopy, Rutherford backscattering, X-ray diffraction, and photoluminescence spectroscopy.Dislocation densities were observed to be high [Formula: see text] near both the GaAs–Si and the Ge–Si interfaces and to decrease to ~5 × 108 cm−2 a few micrometres from these interfaces. No dislocations were observed to originate

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10

Strite, S., D. Biswas, N. S. Kumar, M. Fradkin, and H. Morkoç. "Antiphase domain free growth of GaAs on Ge in GaAs/Ge/GaAs heterostructures." Applied Physics Letters 56, no. 3 (1990): 244–46. http://dx.doi.org/10.1063/1.102818.

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11

Минтаиров, С. А., В. М. Емельянов, Н. А. Калюжный та В. М. Андреев. "Просветление поверхности субэлемента на основе германия в каскадных GaInP/GaAs/Ge-солнечных элементах". Письма в журнал технической физики 44, № 22 (2018): 95. http://dx.doi.org/10.21883/pjtf.2018.22.46927.17464.

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AbstractSpectral characteristics of the Ge subcell of triple-junction GaInP/GaAs/Ge solar cells have been simulated. It was shown that using a GaInP nucleation layer that creates a shallow diffusion p – n junction in Ge can raise the photogeneration current of the Ge subcell by ~4.5 mA/cm^2 as compared with the value in the case of a GaAs nucleation layer. The optimal thickness of the GaInP layer (170–180 nm) makes it possible to additionally raise the photocurrent by ~1.5 mA/cm^2. It was experimentally demonstrated that the photogenerated current of the Ge subcell of GaInP/GaAs/Ge solar cells

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12

Wang, L. C., B. Zhang, F. Fang, et al. "An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system." Journal of Materials Research 3, no. 5 (1988): 922–30. http://dx.doi.org/10.1557/jmr.1988.0922.

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A low-resistance nonspiking Ohmic contact to n-GaAs is formed via solid-state reactions utilizing the Si/Pd/GaAs system. Samples with Si to Pd atomic ratios greater than 0.65 result in specific contact resistivity of the order of 10−6 Ω cm2, whereas samples with atomic ratios less than 0.65 yield higher specific contact resistivities or rectifying contacts. Rutherford backscattering spectrometry, cross-sectional transmission electron microscopy, and electron diffraction patterns show that a Pd, Si layer is in contact with GaAs with excess Si on the surface after the Ohmic formation annealing.

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13

Liu, Hongfei, Yunjiang Jin, Ming Lin, et al. "Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures." Journal of Materials Chemistry C 6, no. 47 (2018): 13059–68. http://dx.doi.org/10.1039/c8tc04799e.

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14

Rajesh, R., J. Liu, H. Fathollahnejad, R. W. Carpenter, and G. N. Maracas. "Structural and chemical analysis of Pd-Ge ohmic contacts to epitaxially lifted-off GaAs." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 842–43. http://dx.doi.org/10.1017/s0424820100171948.

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For the past decade, there has been considerable focus on low resistance Pd-Ge ohmic contacts to GaAs. One approach toward achieving thermodynamically stable ohmic contacts is to consider solid-phasereactions for contacts, rather than the liquid phase interactions that occur upon ohmic alloying of Au-Ge-based systems. The two classifications to this approach are: low temperature annealing (<500°C), mainly using Pd, and high temperature annealing (<500°C), mainly using In. The low temperature annealing class is more compatible with existing GaAs technology, hence the attention to Pd-based

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15

Сушков, А. А., Д. А. Павлов, В. Г. Шенгуров та ін. "Исследования поперечного среза и фотолюминесценции слоя GaAs, выращенного на подложке Si/Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-". Физика и техника полупроводников 53, № 9 (2019): 1271. http://dx.doi.org/10.21883/ftp.2019.09.48137.20.

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AbstractA GaAs/AlAs/GaAs/AlAs/Ge heterostructure grown on a Si/Al_2O_3(1 $$\bar {1}$$ 02) substrate is formed and studied. The Ge buffer layer is produced by the “hot wire” technique, whereas the III–V layers are grown by metal–organic vapor-phase epitaxy. The optical quality of the III–V layers is determined by photoluminescence spectroscopy. Structural studies are performed by high-resolution transmission electron microscopy. The elemental composition is determined by energy-dispersive X-ray spectroscopy. In the study, the possibility of growing a single-crystal GaAs layer on a Si/Al_2O_3 su

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16

Posthill, J. B., D. J. Vitkavage, R. A. Rudder, et al. "TEM characterization of Ge films grown On GaAs (111) and Ge (111) by RPECVD." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 894–95. http://dx.doi.org/10.1017/s0424820100106533.

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The fabrication of a Ge/GaAs heterostructure presents several attractive possibilities for device applications. The formation of a 2-D electron gas due to the difference in bandgaps between the two materials, and the increased hole mobility in Ge may allow a practical HMT-CMOS technology to be developed. Before this structure can be realized; however, it is essential to have a clean, low temperature growth process for the formation of electronic-quality Ge epitaxy. Remote plasma-enhanced chemical vapor deposition (RPECVD) in an ultrahigh vacuum compatible growth chamber is currently being inve

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17

Zaynabidinov, S. Z., A. S. Saidov, A. Y. Boboev та D. P. Abdurahimov. "Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure". Herald of the Bauman Moscow State Technical University. Series Natural Sciences, № 1 (100) (лютий 2022): 72–87. http://dx.doi.org/10.18698/1812-3368-2022-1-72-87.

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The paper studies the structural properties of the thin-film (GaAs)1--х(Ge2)x solid solutions grown by liquid-phase epitaxy on single crystal GaAs substrates. The obtained epitaxial layers were 10 μm thick, had a 0.17 Ω · cm resistivity of p-type conductivity. X-ray diffraction analysis showed that the obtained films are monocrystalline with nanoinclusions with block sizes up to 49 nm, with a crystallographic orientation (100), and have a sphalerite structure of the ZnS type. Morphological studies using AFM showed that the nanocones on the surface of the epitaxial (GaAs)1--х(Ge2)x layers are d

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18

XU, SHIHONG, XIANMING LIU, MAOSHENG MA, et al. "HETEROJUNCTION BAND DISCONTINUITY CHANGE BY ULTRATHIN INTRALAYER: Na." Modern Physics Letters B 07, no. 07 (1993): 459–64. http://dx.doi.org/10.1142/s021798499300045x.

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The changes of band offset of Ge-GaAs(100) heterojunction are observed by means of an ultrathin Na intralayer with the photoemission spectroscopy. 1 ML Na intralayer increases the valence-band discontinuity of Ge-GaAs by 0.19 eV on the average.

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19

HITCHCOCK, A. P., T. TYLISZCZAK, P. BRODERSEN, Z. H. LU, and M. W. C. DHARMA-WARDANA. "STRUCTURE OF CHEMICALLY PREPARED PASSIVATION LAYERS ON SINGLE CRYSTAL SEMICONDUCTOR SURFACES." Surface Review and Letters 06, no. 06 (1999): 1109–20. http://dx.doi.org/10.1142/s0218625x99001232.

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Monolayers of S and Cl have useful passivation properties for group IV and III–V semiconductor surfaces. The structures of Ge(111)–Cl; GaAs(111)–Cl; GaAs(111)A–S, GaAs(111)B–S and GaAs(001)–S monolayer-passivated single crystal semiconductor surfaces have been studied using synchrotron radiation X-ray absorption fine structure spectroscopy (XAFS). The near edge and extended fine structure signals are interpreted using comparisons to multiple scattering XAFS calculations and, in the cases of Ge(111)–Cl and GaAs(111)–Cl, comparison to first-principles calculations. Relationships between the surf

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20

Lumpkin, Nancy E., Gregory R. Lumpkin, and Mark G. Blackford. "The Role of Ni in the Formation of Low Resistance Ni–Ge–Au Ohmic Contacts to n+ GaAs Heterostructures." Journal of Materials Research 14, no. 4 (1999): 1261–71. http://dx.doi.org/10.1557/jmr.1999.0172.

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Nickel is a commonly used wetting agent in alloyed Au–Ge ohmic contacts to n-GaAs, resulting in uniformity improvements to the morphology and contact resistance. In order to study the role of Ni in Ni–Ge–Au alloys, we have fabricated samples with varying Ni content and characterized them using electron microbeam techniques. Our data indicate the amount of Ni in the alloy affects the microstructure and composition, the morphology of the metal/GaAs interface, and the amount of GaAs consumed during the alloy reaction. Also, the dopant distribution into the GaAs is heterogeneous depending on the a

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21

Baidus, Nikolay, Vladimir Aleshkin, Alexander Dubinov, et al. "MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates." Crystals 8, no. 8 (2018): 311. http://dx.doi.org/10.3390/cryst8080311.

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The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes were of micro-striped type designed for the operation under the electrical pumping. Influence of the Si substrate offcut from the [001] direction, thickness of a Ge buffer and insertion of the AlAs/GaAs superlattice between Ge and GaAs on the structural and optical properties of fabricated samples was studied. The measured threshold current densities at room temperatures were

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22

Koltin, E., and M. Eizenberg. "Ge‐rich Co‐Ge contacts ton‐type GaAs." Journal of Applied Physics 71, no. 9 (1992): 4604–11. http://dx.doi.org/10.1063/1.350760.

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23

Bosi, Matteo, Giovanni Attolini, Claudio Ferrari, et al. "Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge." Journal of Crystal Growth 318, no. 1 (2011): 367–71. http://dx.doi.org/10.1016/j.jcrysgro.2010.10.101.

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24

Rai, A. K., A. K. Petford-Long, A. Ezis, and D. W. Langer. "Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 326–27. http://dx.doi.org/10.1017/s0424820100126433.

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Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, e

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25

Strite, S. "GaAs/Ge/GaAs heterostructures by molecular beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, no. 5 (1990): 1131. http://dx.doi.org/10.1116/1.584931.

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26

Taboada, A. G., T. Kreiliger, C. V. Falub, et al. "Integration of GaAs on Ge/Si towers by MOVPE." MRS Proceedings 1538 (2013): 283–89. http://dx.doi.org/10.1557/opl.2013.842.

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ABSTRACTWe report on the maskless integration of micron-sized GaAs crystals on patterned Si substrates by metal organic vapor phase epitaxy. In order to adapt the mismatch between the lattice parameter and thermal expansion coefficient of GaAs and Si, 2 μm tall Ge crystals were first grown as virtual substrate by low energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs structures grown on top of the Ge crystals at the transition towards full pyramids with energetically stable {111} facets. A substantial release of strain is shown in GaAs crys

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27

Brammertz, G., M. Caymax, M. Meuris, et al. "GaAs on Ge for CMOS." Thin Solid Films 517, no. 1 (2008): 148–51. http://dx.doi.org/10.1016/j.tsf.2008.08.049.

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28

Kostamo, P., A. Säynätjoki, L. Knuuttila, et al. "Ge/GaAs heterostructure matrix detector." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 563, no. 1 (2006): 17–20. http://dx.doi.org/10.1016/j.nima.2006.01.058.

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29

Luo, Guang-Li, Zong-You Han, Chao-Hsin Chien, et al. "Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs." Journal of The Electrochemical Society 157, no. 1 (2010): H27. http://dx.doi.org/10.1149/1.3246000.

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30

Lumpkin, Nancy E., Gregory R. Lumpkin, and K. S. A. Butcher. "Investigation of low- and high-resistance Ni–Ge–Au ohmic contacts to n+ GaAs using electron microbeam and surface analytical techniques." Journal of Materials Research 11, no. 5 (1996): 1244–54. http://dx.doi.org/10.1557/jmr.1996.0159.

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A process for the formation of low-resistance Ni–Ge–Au ohmic contacts to n+ GaAs has been refined using multivariable screening and response surface experiments. Samples from the refined, low-resistance process (which measure 0.05 ± 0.02 Ω · mm) and the unrefined, higher resistance process (0.17 ± 0.02 Ω · mm) were characterized using analytical electron microscopy (AEM), transmission electron microscopy (TEM), scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), and x-ray photoemission spectroscopy (XPS) depth profiling methods. This approach was used to identify microstruct

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31

Guelton, N., R. G. Saint-Jacques, G. Lalande, and J.-P. Dodelet. "Microstructural study of GaAs epitaxial layers on Ge(100) substrates." Journal of Materials Research 10, no. 4 (1995): 843–52. http://dx.doi.org/10.1557/jmr.1995.0843.

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GaAs layers grown by close-spaced vapor transport on (100) Ge substrates have been investigated as a function of the experimental growth conditions. The effects on the microstructure of the surface preparation, substrate misorientation, and annealing were studied using optical microscopy and transmission electron microscopy. Microtwins and threading dislocations are suppressed by oxide desorption before deposition. Single domain GaAs layers have been obtained using a 50 nm thick double domain buffer layer on an annealed Ge substrate misoriented 3°toward [011]. The mismatch strain is mainly acc

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32

Kazakov, I. P., S. A. Zinov’ev, A. V. Klekovkin, V. A. Sazonov, V. N. Kukin, and N. I. Borgardt. "EXTENDED DEFECTS IN GaAs/Ge/GaAs HETEROSTRUCTURES WITH TURNING GaAs LAYERS." Bulletin of the Lebedev Physics Institute 47, no. 12 (2020): 365–70. http://dx.doi.org/10.3103/s106833562012012x.

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33

Ebert, Christopher B., Loren A. Eyres, Martin M. Fejer, and James S. Harris. "MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy." Journal of Crystal Growth 201-202 (May 1999): 187–93. http://dx.doi.org/10.1016/s0022-0248(98)01317-7.

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34

Posthill, J. B., D. P. Malta, R. Pickett, M. L. Timmons, T. P. Humphreys, and R. J. Markunas. "Recent advances in heteroepitaxial Ge/Si(100) and Ge/Si(l 11)." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 838–39. http://dx.doi.org/10.1017/s0424820100171924.

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Heteroepitaxial Ge-on-Si could have many applications which include: high mobility p-channel fieldeffect transistors (FETs), large area Ge-based IR or X-ray detectors, or as a substrate for the growth of other epitaxial semiconductors. In particular, the close lattice match between Ge and GaAs and Ge and ZnSe offers a potential for Ge to be used as an interlayer for a GaAs/Si or ZnSe/Si technology.Additionally, with the Si substrate as the "foundation" for further epitaxial semiconductors, thereisa built-in thermal match for any device that must be intimately bonded to Si-based circuitry. This

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35

Abouzaid, Oumaima, Hussein Mehdi, Mickael Martin, et al. "O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate." Nanomaterials 10, no. 12 (2020): 2450. http://dx.doi.org/10.3390/nano10122450.

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The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at r

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Radulescu, F., and J. M. McCarthy. "Microstructural Characterization Of The Pd-Ge Ohmic Contact On Gaas By Cross-Sectional Transmission Electron Microscopy (Tem)." Microscopy and Microanalysis 5, S2 (1999): 158–59. http://dx.doi.org/10.1017/s1431927600014112.

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In the last decade, Pd-Ge contact system emerged as the most promising replacement of the Au-Ni-Ge alloy, still used by most of today's GaAs technology. Its better electrical properties stem from the fact that contact formation is based on a series of solid state reactions without any melting of the metal thin films and the GaAs substrate taking place during annealing. Research studies by E.D. Marshall et al. (1) demonstrated that thermally stable contacts with low resistivities could be achieved by low temperature annealing of Pd and Ge thin films. Their studies also revealed that the excess

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37

Abdul Awai, M., El Hang Lee, Eric Y. Chan, et al. "Comparative Studies of the Structural, Electrical and Opto-Electronic Properties of Epitaxial GaAs Layers Grown On Either Si, Ge Or Ge Coated Si Substrates By Mocvd." MRS Proceedings 91 (1987). http://dx.doi.org/10.1557/proc-91-241.

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ABSTRACTWe report the epitaxial growth of GaAs films on bulk Si, Ge and Ge coated Si substrates by MOCVD. This work is directed at comparing the structural, electrical, optical and optoelectronic properties of the GaAs films grown on these substrates. The quality of the GaAs films was evaluated by a number of techniques including X-ray, TEM, RBS, I-V and C-V. We have also obtained good photoresponse for Au-GaAs/Si, Au-GaAs/Ge and Au-GaAs/Ge/Si Schottky diodes at 0.87μm. We have observed significant differences in defect density, strain, crystalline quality, structural order, doping density dep

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Kirillov, D., and Y. Chung. "Raman Scattering Study of the Au-Ge-Gaas Ohmic Contact Structure Formed by Rapid Thermal Processing." MRS Proceedings 92 (1987). http://dx.doi.org/10.1557/proc-92-387.

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ABSTRACTRaman Scattering Was Used To Obtain New Information on the formation of Au-Ge-GaAs alloyed ohmic contacts. During alloying, we observe that amorphous Ge is transfoplmed into polycrystalline material. When Ge diffuses into the GaAs, no n+-GaAs layer is formed. Due to the intermixing of layers, both GaAs and Ge had a large number of impurities which formed deep electronic states in the forbidden gap. Electronic light scattering involving these states was observed. While several models for the Au-Ge-GaAs ohmic contact have been proposed, the model consistent with our Raman data includes r

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CARTER, C. B., B. C. DE COOMAN, N. H. CHO, R. M. FLETCHER, D. K. WAGNER, and J. BALLANTYNE. "DEFECTS IN GaAs GROWN ON Ge SUBSTRATES." MRS Proceedings 56 (1985). http://dx.doi.org/10.1557/proc-56-73.

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AbstractThe growth of polar semiconducting materials on non-polar semiconducting substrates is illustrated by experimental observations of GaAs grown on Ge substrates and on Ge epilayers which had been grown on Si substrates. The GaAs epilayers are grown in each case by metal-organic, vapor-phase deposition. The GaAs/Ge heterophase junction, the grain boundaries in GaAs grown on {110} Ge and on {001} Ge/Si composit substrates and the anti-phase boundaries in GaAs grown on {001} Ge substrates are eat.h illustated. The interfaces have been studied by transmission electron microscopy and reveal t

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Venkatasubramanian, R., M. L. Timmons, S. Bothra, and J. M. Borrego. "Optimisation Of The Heteroepitaxy Of Ge On GaAs For Minority-Carrier Lifetime." MRS Proceedings 198 (1990). http://dx.doi.org/10.1557/proc-198-253.

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ABSTRACTGrowth of Ge on GaAs at reasonably high temperatures, which produce better crystallinity in the Ge, presents serious difficulties due to the dissociation of the GaAs substrate. In this paper, we describe the growth of a lowtemperature buffer layer of Ge on GaAs that prevents decomposition of the GaAs during high-temperature growth of Ge. Using this approach, we present the first report of highly specular, mass-transport-limited high-temperature growth of Ge on GaAs that is comparable to the homoepitaxy of Ge. The factors affecting the minority-carrier lifetime of Ge on GaAs, using such

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Kolawa, E., C. W. Nieh, W. Flick, J. Molarius, and M.-A. Nicolet. "Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers." MRS Proceedings 126 (1988). http://dx.doi.org/10.1557/proc-126-289.

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ABSTRACTContacts to GaAs substrates with n-type epilayers formed by GaAs/Ni/Ge/WN/Au, GaAs/Ni/Ge/Ni/WN/Au and GaAs/Ge/ Ni/WN/Au systems were investigated. Ohmic contacts in these systems were formed by a solid-phase reaction between Ni/Ge and GaAs. Interfacial reaction and electrical properties of these contacts are characterized by backscattering spectrometry, transmission electron microscopy and contact resistivity measurements. Resistivities in the 10−δ Ω cm range are achieved.

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Kumar, A., G. K. Dalapati, Terence Kin Shun Wong, et al. "Interfacial Properties, Surface Morphology and Thermal Stability of Epitaxial GaAs on Ge Substrates with High-k Dielectric for Advanced CMOS Applications." MRS Proceedings 1252 (2010). http://dx.doi.org/10.1557/proc-1252-i07-05.

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AbstractEpitaxial GaAs layers had been grown by metal organic chemical vapor deposition at 620°C on Ge(100) susbtrates. The surface roughness of the GaAs is greater than that of GaAs bulk wafers and epilayer morphology is influenced by miscut of the Ge substrate. The GaAs/Ge interface is of good quality and devoid of misfit dislocations and antisite defects. However, Ge diffusion into GaAs occurred during epitaxy and resulted in auto-doping. ZrO2 was deposited by magnetron sputtering onto the epi-GaAs. Capacitance voltage measurements show that the TaN/ZrO2/epi-GaAs capacitor has an interfacic

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Ohmachi, Yoshiro, Yukinobu Shinoda, and Satoshi Oku. "GaAs/Ge Crystal Growth on Si and SiO2/Si Substrates." MRS Proceedings 67 (1986). http://dx.doi.org/10.1557/proc-67-65.

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ABSTRACTAn approach to the composite layer growth of GaAs/Ge on Si(100) and insulator–coated Si(100) has been investigated. To overcome a problem of antiphase disorder of GaAs occurring along with epitaxial growth on Ge, thermal etching on Ge surfaces in hydrogen was introduced just prior to the growth. Antiphase–domain–free GaAs grown on a Ge(100) wafer exhibited mirror surfaces, photoluminescence characteristics comparable to those of homoepitaxial layers, and low etch–pit densities. The autodoping of Ge into GaAs induced a highly doped interfacial layer several thousand angstroms thick. The

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Wuyts, K., J. Watté, R. E. Silverans, et al. "Doping and beyond: towards a common model for the ohmic contact formation mechanism in the Au/Te/Au/-, AuGe/-, and Ge/Pd/n-GaAs systems." MRS Proceedings 260 (1992). http://dx.doi.org/10.1557/proc-260-355.

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ABSTRACTThe results of our recent research on the ohmic contact formation mechanism in furnace alloyed Au/Te/Au/GaAs contacts are summarized, and preliminary Raman measurements on annealed Ge/Pd/GaAs structures are presented. The data and those reported in literature on the AuGe- and Ge/Pd- GaAs systems are argued to be more in agreement with the graded crystalline heterojunction concept (the formation of n+-Ge/GaAs, n+Ga2Te3/GaAs junctions) than with the doping model (the formation of n+-GaAs).

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Watté, J., R. E. Silverans, H. Miinder, et al. "The Ge/Pd/n-GaAs Ohmic Contact Interface Studied by Backside Raman Spectroscopy." MRS Proceedings 337 (1994). http://dx.doi.org/10.1557/proc-337-331.

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ABSTRACTThe Ge/Pd/n-GaAs ohmic contact structure constitutes a near-ideal model system to test the applicability of the different metal/GaAs ohmic contact models. After annealing, an atomically flat interface between the GaAs substrate and a regrown Ge layer is obtained. A main point of discussion is whether the ohmic conduction across this junction either occurs by an enhanced Ge-doping of the GaAs (regrown) substrate surface layers (the doping model), and/or by a degenerate As-doping ot the Ge overlayer (the heterojunction hypothesis). In order to examine the applicability of both models, a

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Genut, M., and M. Eizenberg. "Modifications in the Course of Reaction Between Co and GaAs Due To The Presence of a Ge Film." MRS Proceedings 102 (1987). http://dx.doi.org/10.1557/proc-102-237.

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ABSTRACTModifications in the course of reaction between Co thin films and single crystal GaAs substrate due to the addition of a Ge film either on top or below the metal layer have been studied. The microstructure and phase formation for the systems: Co/GaAs, Co/Ge/GaAs, and Ge/Co/GaAs have been studied by Auger electron spectroscopy, transmission electron microscopy and X-ray diffraction.

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Takai, M., Y. Kodama, T. Tanigawa, K. Kobayashi, K. Gamo, and S. Namba. "Gallium Arsenide Layers Grown By Mbe on Germanium Islands on Insulator." MRS Proceedings 53 (1985). http://dx.doi.org/10.1557/proc-53-181.

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ABSTRACTLocal variation of photoluminescence (PL) spectra for MBE GaAs grown on an insulating substrate with Ge-islands interface layers, prepared by zone melting recrystallization, has been investigated. The GaAs layers on the single crystalline Ge islands emit PL, the intensity of which was almost comparable to that of the GaAs layers on bulk Ge, while by a factor of 50 lower PL intensity was observed for the GaAs layers on Si02. PL spectra were found to show peak shifts due to the band-gap variation near the interface layer of GaAs, which was in good agreement with the residual strain obtai

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Kim, Taeil, D. D. L. Chung, and S. Mahajan. "Cross-Section Transmission Electron Microscope Study of Ni/Au/Ge/Au Ohmic Contact to Gallium Arsenide." MRS Proceedings 77 (1986). http://dx.doi.org/10.1557/proc-77-749.

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ABSTRACTThe interfacial structures resulting from the metallurgical reactions between a Ni/Au/Ge/Au film and (100) GaAs substrate were studied by cross-section TEM. Annealing at 300 – 350°C causes a complicated solid-solid phase reaction, resulting in the multilayer structure of Ni2Ge/Au7Ga2/NiAs/Au7Ga,/GaAs. The contact shows non-ohmic character, since most of the doping element Ge is trapped in the surface Ni2Ge layer When the contact is annealed at above 400°C. the layered structure is destroyed because one of the phases (Au-Ga) becomes liquid but other phases (Ni-Ge, Ni-As) remain solid Ge

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Palmstrom, C. J., G. J. Galvin, S. A. Schwarz, B. C. De Cooman, and J. W. Mayer. "SOLID PHASE EPITAXIAL GROWTH OF Ge ON GaAs." MRS Proceedings 56 (1985). http://dx.doi.org/10.1557/proc-56-67.

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AbstractSolid phase epitaxial growth of electron beam evaporated Ge layers on unheated GaAs has been demonstrated. The amorphous Ge layers grow epitaxially on the GaAs surface during anneals at 400°C. A technique for growing these epitaxial layers without the need for in-situ heat treatment of the GaAs prior to Ge deposition is described.

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Зайнабидинов, С. З., А. Й. Бобоев та Д. П. Абдурахимов. "Получение, морфология и фотоэлектрические свойства эпитаксиальных пленок (GaAs)1-x(Ge2)х на основе GaAs". «Узбекский физический журнал» 23, № 4 (2021). http://dx.doi.org/10.52304/.v23i4.288.

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Изучены структурные свойства тонкопленочных твердых растворов (GaAs)1-х(Ge2)x, выращенных методом жидкофазной эпитаксии на подложках монокристаллов GaAs. Полученные эпитаксиальные слои имели толщину 10 мкм, p-тип проводимости, удельное сопротивление 0.17 Омсм. Морфологические исследования с помощью атомно-силовой микроскопии (АСМ) показали, что наблюдаемые на поверхности эпитаксиальных слоев (GaAs)1-х(Ge2)x наноконусы обусловлены присутствием в них атомов Ge. Спектры фоточуствительности этих твердых растворов имеют своеобразные флуктуации, обусловленные образованием в них различных комплексов

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