Relevant bibliographies by topics / Germanium poreux

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  2. Dissertations / Theses
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Academic literature on the topic 'Germanium poreux'

Author: Grafiati
Published: 21 December 2024
Last updated: 31 July 2025

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Journal articles on the topic "Germanium poreux"

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Chubenko, E. B., N. L. Grevtsov, V. P. Bondarenko та ін. "RAMAN SPECTRА OF SILICON/GERMANIUM ALLOY THIN FILMS BASED ON POROUS SILICON". Journal of Applied Spectroscopy 89, № 5 (2022): 614–20. http://dx.doi.org/10.47612/0514-7506-2022-89-5-614-620.

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The regularities of composition changes of silicon/germanium alloy thin films formed on a monocrystalline silicon substrate by electrochemical deposition of germanium into a porous silicon matrix with subsequent rapid thermal annealing (RTA) at a temperature of 750–950°C are studied. An analysis of the samples by Raman spectroscopy showed that an increase of RTA temperature leads to a decrease in the germanium concentration in the formed film. A decrease of the RTA duration at a given temperature makes it possible to obtain films with a higher concentration of germanium and to control the comp
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Garralaga Rojas, Enrique, Jan Hensen, Jürgen Carstensen, Helmut Föll, and Rolf Brendel. "Porous germanium multilayers." physica status solidi (c) 8, no. 6 (2011): 1731–33. http://dx.doi.org/10.1002/pssc.201000130.

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Grevtsov, Nikita, Eugene Chubenko, Vitaly Bondarenko, Ilya Gavrilin, Alexey Dronov, and Sergey Gavrilov. "Germanium electrodeposition into porous silicon for silicon-germanium alloying." Materialia 26 (December 2022): 101558. http://dx.doi.org/10.1016/j.mtla.2022.101558.

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Amato, G., A. M. Rossi, L. Boarino, and N. Brunetto. "On the role of germanium in porous silicon-germanium luminescence." Philosophical Magazine B 76, no. 3 (1997): 395–403. http://dx.doi.org/10.1080/01418639708241102.

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Li, Xiu, Wei Guo, Qian Wan, and Jianmin Ma. "Porous amorphous Ge/C composites with excellent electrochemical properties." RSC Advances 5, no. 36 (2015): 28111–14. http://dx.doi.org/10.1039/c5ra02459e.

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Xu, Jing, Thanh-Dinh Nguyen, Kai Xie, Wadood Y. Hamad, and Mark J. MacLachlan. "Chiral nematic porous germania and germanium/carbon films." Nanoscale 7, no. 31 (2015): 13215–23. http://dx.doi.org/10.1039/c5nr02520f.

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Co-assembly of cellulose nanocrystals (CNCs) with germanium(iv) alkoxide in a mixed solvent system produces chiral nematic photonic GeO<sub>2</sub>/CNC composites, which were converted to semiconducting, mesoporous GeO<sub>2</sub>/C and Ge/C replicas.
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Yin, Huayi, Wei Xiao, Xuhui Mao, Hua Zhu, and Dihua Wang. "Preparation of a porous nanostructured germanium from GeO2via a “reduction–alloying–dealloying” approach." Journal of Materials Chemistry A 3, no. 4 (2015): 1427–30. http://dx.doi.org/10.1039/c4ta05244g.

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Rojas, E. Garralaga, J. Hensen, J. Carstensen, H. Föll, and R. Brendel. "Lift-off of Porous Germanium Layers." Journal of The Electrochemical Society 158, no. 6 (2011): D408. http://dx.doi.org/10.1149/1.3583645.

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Isaiev, M., S. Tutashkonko, V. Jean, et al. "Thermal conductivity of meso-porous germanium." Applied Physics Letters 105, no. 3 (2014): 031912. http://dx.doi.org/10.1063/1.4891196.

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Platonov, Nikolay, Nail Suleimanov, and Valery Bazarov. "Study of the electrophysical properties of nanostructured porous germanium as a promising material for electrodes of electrochemical capacitors." E3S Web of Conferences 288 (2021): 01073. http://dx.doi.org/10.1051/e3sconf/202128801073.

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Electrochemical capacitors (ECC) are a fast charging devices, with high power density, capacity and increased life time. Nanostructured semiconductors are now considered as the promising materials for electrodes of such devices due to its conductive properties and effective surface. One of such materials is the porous germanium which can be used as an electrode in electrochemical capacitors. In this article the novel approach based on the method of ion implantation was developed to grow these structures. This method allows to obtain a structures up to 1 μm thick. The object of this work was th
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Dissertations / Theses on the topic "Germanium poreux"

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Mathiaud, Romain. "Synthèse et structuration de disulfure de germanium en présence de liquides ioniques et de tensioactifs." Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20088/document.

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L'obtention de manière contrôlée de matériaux chalcogénures nanostructurés et possédant une surface spécifique importante ou fonctionnalisée est un défi très intéressant. En alliant une surface spécifique élevée à la polarisabilité des surfaces chalcogénures ou en élaborant des matériaux fonctionnalisés, on peut espérer une percée dans de nombreux domaines comme la catalyse, la séparation gazeuse, l'électrochimie, le photovoltaïque ou l'optique... L'objectif de cette thèse était de développer des voies de synthèse du disulfure de germanium (GeS2) par chimie douce à température et pression ambi
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Jaafar, Abdallah. "Développement de matériaux poreux pour des applications de détection en optique intégrée dans le moyen infrarouge." Electronic Thesis or Diss., Université de Rennes (2023-....), 2024. http://www.theses.fr/2024URENS043.

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Les capteurs optiques intégrés basés sur des dispositifs optiques guidés en matériaux poreux peuvent détecter efficacement et sélectivement des molécules polluantes présentes dans l’eau, l’air et l’environnement. La structure poreuse permet aux molécules à détecter de s’infiltrer dans les pores, ce qui permet une détection volumique. Cette caractéristique exalte la sensibilité d’un capteur optique intégré et offre aussi la possibilité de détecter une très faible quantité de molécules. Dans ce travail, deux matériaux transparents dans le moyen infrarouge (MIR) ont été étudiés pour le développem
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Wang, Xu-xu. "Modification de solides micro - et méso - poreux par chimie organométallique de surface." Lyon 1, 1999. http://www.theses.fr/1999LYO10327.

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L'objectif de ce travail de these etait de modifier les proprietes de tamis moleculaires par reaction avec des complexes organometalliques. Des etudes preliminaires avaient ete realisees sur mordenite et sur cloverite. Nous avons etendu ces etudes a toute une serie de composes micro- et mesoporeux, telle la zsm-5, la faujasite y et mcm-41. Par reaction avec le tetrabutyl germanium il est possible de modifier toutes les entrees de pores de la zsm-5 sans toucher a la surface interne, ce qui entraine des modifications des proprietes d'adsorption des hydrocarbures. Cependant, la reaction est moins
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Buttard, Denis. "Étude structurale du silicium poreux de type p par diffraction haute résolution des rayons X." Université Joseph Fourier (Grenoble ; 1971-2015), 1997. http://www.theses.fr/1997GRE10141.

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La premiere partie de ce travail a ete consacree a l'etude, par diffraction des rayons x, des deformations engendrees par des effets de surface. Nous avons notamment mis en evidence, grace a des mesures in situ sous ultra vide, que la dilatation qui existe pour un echantillon fraichement prepare est due aux liaisons si-h#x presentes a la surface des cristallites de silicium. Nous avons d'autre part etudie la passivation du silicium poreux par oxydation des cristallites de silicium qui se traduit par une dilatation supplementaire a la dilatation originelle du parametre de maille cristallin. Le
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Tutashkonko, Sergii. "Élaboration du Ge mésoporeux et étude de ses propriétés physico-chimiques en vue d'applications photovoltaïques." Thèse, Université de Sherbrooke, 2013. http://hdl.handle.net/11143/6145.

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Le sujet de cette thèse porte sur l'élaboration du nouveau nanomatériau par la gravure électrochimique bipolaire (BEE) -- le Ge mésoporeux et sur l'analyse de ses propriétés physico-chimiques en vue de son utilisation dans des applications photovoltaïques. La formation du Ge mésoporeux par gravure électrochimique a été précédemment rapportée dans la littérature. Cependant, le verrou technologique important des procédés de fabrication existants consistait à obtenir des couches épaisses (supérieure à 500 nm ) du Ge mésoporeux à la morphologie parfaitement contrôlée. En effet, la caractérisation
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Garchery, Laurent. "Fabrication et étude des propriétés physiques des nanostructures Si/SiGe : application aux nouveaux dispositifs." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10232.

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La technologie de la microelectronique silicium beneficie aujourd'hui d'investissements massifs et continus. Tout porte a croire que les excellentes proprietes du systeme si/sio#2 assureront la perennite du si pendant encore de nombreuses annees. Le developpement de nouveaux materiaux pouvant ameliorer les performances des dispositifs a base de si est donc encourage. En particulier, l'heterosysteme si/sige apparait comme le meilleur candidat pour le developpement d'une technologie a heterojonction a base de si. De tels materiaux doivent cependant etre compatibles avec les temperatures de recui
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FUGATTINI, Silvio. "Binder-free porous germanium anode for Li-ion batteries." Doctoral thesis, Università degli studi di Ferrara, 2019. http://hdl.handle.net/11392/2488081.

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To develop high energy density lithium ion batteries, the use of new electrode materials is required. Germanium is among the possible alternatives to the most commonly used anode, graphite (372 mAh/g), thanks to its four-times higher theoretical gravimetric capacity (1600 mAh/g). Here is presented a two-step method to produce a binder-free porous germanium anode, depositing the semiconductor on metallic substrates by means of Plasma Enhanced Chemical Vapour Deposition (PECVD) and subsequently performing an electrochemical etching with hydrofluoric acid to create a porous structure. The Ge-base
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Huang, Xuezhen. "Fabrication and optical properties of (I) erbium-doped nanowires containing germanium and/or zinc oxide and (II) porous germanium nanowires." [Fort Worth, Tex.] : Texas Christian University, 2010. http://etd.tcu.edu/etdfiles/available/etd-04282010-134727/unrestricted/Huang.pdf.

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Kitschke, Philipp, Marc Walter, Tobias Rüffer, et al. "Porous Ge@C materials via twin polymerization of germanium(II) salicyl alcoholates for Li-ion batteries." Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-197302.

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The germylenes, germanium(II) 2-(oxidomethyl)phenolate (1), germanium(II) 4-methyl-2-(oxidomethyl)phenolate (2) and germanium(II) 4-bromo-2-(oxidomethyl)phenolate (3) were synthesized and their thermally induced twin polymerization to give organic–inorganic hybrid materials was studied. The compounds 1–3 form oligomers including dimers, trimers and tetramers as a result of intermolecular coordination of the benzylic oxygen atom to germanium. The structural motifs were studied by single crystal X-ray diffraction analysis and DFT-D calculations. Thermally induced twin polymerization of these ger
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CALABRESE, Gabriele. "Relaxed germanium epilayers on porous silicon buffers for low dislocation content Ge on Si virtual substrates." Doctoral thesis, Università degli studi di Ferrara, 2015. http://hdl.handle.net/11392/2389093.

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While silicon represents the dominant material in the semiconductor industry, the continuous improvement in the performance of Si based devices is reaching its upper bound due to the approaching of insuperable physical limitations intrinsic to Si, which requires the introduction of new semiconductor materials and the development of new assembly techniques to guarantee the future performance improvement and reduction in fabrication costs. The integration of high-quality germanium epilayers on Si substrates has received great attention from the semiconductor community due to the chance to extend
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Book chapters on the topic "Germanium poreux"

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Armatas, Gerasimos S., and Mercouri G. Kanatzidis. "Germanium-Based Porous Semiconductors from Molecular Zintl Anions." In Zintl Ions. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/430_2010_22.

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Niwa, Miki, and Yuichi Murakami. "Function and characterization of CVD zeolites with controlled pore-opening sizes." In Chemistry and Technology of Silicon and Tin. Oxford University PressOxford, 1992. http://dx.doi.org/10.1093/oso/9780198555803.003.0014.

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Abstract Chemical vapour deposition (CVD) zeolites with precisely-controlled pore-opening sizes have been synthesized which show enhanced shapeselectivity and hence, increased efficiency in applications which include catalytic reactions and separations. The method involves the deposition of a silicon alkoxide on the external surface of the zeolites; the resulting layer of silica thus formed exerts a fine control on the pore-opening sizes. As examples of application, the selective cracking of octane isomers on mordenite, and the separation of oxygen and nitrogen on zeolite A, are described. The
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Rogov, Alexey M., Viacheslav V. Vorobev, Vladimir I. Nuzhdin, Valery F. Valeev, and Andrey L. Stepanov. "Porous silicon and germanium thin layers with silver nanoparticles." In Nanocomposites for Photonic and Electronic Applications. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-818396-0.00007-8.

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Paillaud, J. L., Y. Lorgouilloux, B. Harbuzaru, P. Caullet, J. Patarin, and N. Bats. "Structure orienting role of germanium in zeolite synthesis." In From Zeolites to Porous MOF Materials - The 40th Anniversary of International Zeolite Conference, Proceedings of the 15th International Zeolite Conference. Elsevier, 2007. http://dx.doi.org/10.1016/s0167-2991(07)80865-2.

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Niwa, Miki, Carmela V. Hidalgo, Tadashi Hattori, and Yuichi Murakami. "Germanium Methoxide: New Reagent for Controlling the Pore-Opening Size of Zeolite by CVD." In Studies in Surface Science and Catalysis. Elsevier, 1986. http://dx.doi.org/10.1016/s0167-2991(09)60886-7.

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Conference papers on the topic "Germanium poreux"

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Wietler, Tobias F., Eddy P. Rugeramigabo, Eberhard Bugiel, and Enrique Garralaga Rojas. "Relaxed Germanium on Porous Silicon Substrates." In 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2012. http://dx.doi.org/10.1109/istdm.2012.6222502.

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Schreiber, Waldemar, Jens Ohlmann, Patrick Schygulla, Stefan Janz, Jinyoun Cho, and Kristof Dessein. "III-V Epitaxy on Detachable Porous Germanium 4” Substrates." In 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC). IEEE, 2023. http://dx.doi.org/10.1109/pvsc48320.2023.10359546.

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Kabashin, Andrei V., Vincent-Gabriel Pilon Marien, D. Q. Yang, F. Magny, and Michel Meunier. "Porous nanostructured layers on germanium produced by laser optical breakdown processing." In High-Power Lasers and Applications, edited by Alberto Pique, Koji Sugioka, Peter R. Herman, et al. SPIE, 2003. http://dx.doi.org/10.1117/12.478574.

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Daniel, Valentin, Thomas Bidaud, Jeremie Chretien, et al. "Characteristics of Detachable III-V Solar Cells Grown on Porous Germanium." In 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC). IEEE, 2023. http://dx.doi.org/10.1109/pvsc48320.2023.10359809.

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Tsybeskov, L., K. L. Moore, S. P. Duttagupta, K. D. Hirschman, D. G. Hall, and P. M. Fauchet. "Fabrication and Luminescence of Large Si Nanocrystals." In Chemistry and Physics of Small-Scale Structures. Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.ctub.6.

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The photoluminescence (PL) in crystalline silicon (c-Si) has been investigated during the last decades. Recent interest has focused on the visible PL that is observed in Si nanoclusters and in porous Si (PSi), the infrared PL in silicon-germanium superlattices, and the subgap PL due to impurities in c-Si [1]. Band edge PL in bulk Si is inefficient and usually observed only at low temperatures because c-Si has an indirect bandgap. The electroluminescence (EL) is as inefficient as the photoluminescence (PL) and, in addition, the EL is quenched by an electric field E ≥ 104 V/cm due to field-induc
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Daniel, Valentin, Jeremie Chretien, Gwenaelle Hamon, et al. "Micro-fabrication and transfer of a detachable Ge epitaxial layer grown on porous germanium." In 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC). IEEE, 2022. http://dx.doi.org/10.1109/pvsc48317.2022.9938777.

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Tsybeskov, L., K. D. Hirschman, S. P. Duttagupta, D. G. Hall, and P. M. Fauchet. "Fabrication and Characterization of Si Dots Prepared by Self-Organized Recrystallization." In Quantum Optoelectronics. Optica Publishing Group, 1997. http://dx.doi.org/10.1364/qo.1997.qfc.4.

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The photoluminescence (PL) in crystalline silicon (c-Si) has been investigated during the last decades. Interest has focused on the visible PL that is observed in Si nanoclusters and in porous Si (PSi), the infrared PL in silicon-germanium superlattices, and the subgap PL due to impurities in c-Si [1]. Whereas strong room-temperature PL has been demonstrated in the visible with porous silicon, band edge PL in bulk Si is inefficient and usually observed only at low temperatures. The electroluminescence (EL) is as inefficient as the PL, and, in addition, the EL is quenched by an electric field E
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Rivera, Johan, and Ongi Englander. "Mechanical and Thermal Properties of Highly Organized Nanowire-Alumina Nanocomposites." In ASME 2010 International Mechanical Engineering Congress and Exposition. ASMEDC, 2010. http://dx.doi.org/10.1115/imece2010-38186.

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The use of porous anodic alumina allows for the fabrication of highly ordered unidirectional nanowire composites. Sol gel deposition was used in the successful fabrication of zirconia-alumina and zinc oxide-alumina nanocomposites. Silicon-alumina and germanium-alumina nanocomposites were fabricated via catalyst-assisted chemical vapor deposition. The mechanical and thermal properties of these alumina nanocomposites were investigated. The Vickers hardness of the different nanocomposites was established by means of microindentation. Vickers testing was performed at room temperature and after spe
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Kallel, A., G. Roux, T. Derycke, C. L. Martin, M. Marinova, and C. Cayron. "Microstructure and thermoelectric properties of bulk and porous n-type silicon-germanium alloy prepared by HUP." In 9TH EUROPEAN CONFERENCE ON THERMOELECTRICS: ECT2011. AIP, 2012. http://dx.doi.org/10.1063/1.4731583.

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Arvinte, Roxana, Samuel Cailleaux, Alex Brice Poungoue Mbeunmi, Alexandre Heintz, Richard Ares, and Abderraouf Boucherif. "Epitaxial lift-off process for III-V solar cells by using porous germanium for substrate re-use." In 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC). IEEE, 2020. http://dx.doi.org/10.1109/pvsc45281.2020.9301028.

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