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Relevant bibliographies by topics / Graphene Schottky Diode

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Academic literature on the topic 'Graphene Schottky Diode'

Author: Grafiati

Published: 14 March 2023

Last updated: 31 July 2025

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Journal articles on the topic "Graphene Schottky Diode"

1

Rahmani, Meisam, Razali Ismail, Mohammad Taghi Ahmadi, et al. "The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance." Journal of Nanomaterials 2013 (2013): 1–8. http://dx.doi.org/10.1155/2013/636239.

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Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentrati

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Labed, Madani, Nouredine Sengouga та You Seung Rim. "Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer". Nanomaterials 12, № 5 (2022): 827. http://dx.doi.org/10.3390/nano12050827.

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Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (ϕB), from 1.32 to 0.43 eV, an

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Mohd Saman, Rahimah, Sharaifah Kamariah Wan Sabli, Mohd Rofei Mat Hussin, Muhammad Hilmi Othman, Muhammad Aniq Shazni Mohammad Haniff, and Mohd Ismahadi Syono. "High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications." Applied Sciences 9, no. 8 (2019): 1587. http://dx.doi.org/10.3390/app9081587.

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Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CN

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Ashour, A., M. Saqr, M. AbdelKarim, A. Gamal, A. Sharaf, and M. Serry. "Schottky Diode Graphene Based Sensors." International Journal on Smart Sensing and Intelligent Systems 7, no. 5 (2020): 1–4. http://dx.doi.org/10.21307/ijssis-2019-097.

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Shtepliuk, Ivan, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, and Rositsa Yakimova. "Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals." Beilstein Journal of Nanotechnology 7 (November 22, 2016): 1800–1814. http://dx.doi.org/10.3762/bjnano.7.173.

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A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of t

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Dub, Maksym, Pavlo Sai, Aleksandra Przewłoka, et al. "Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures." Materials 13, no. 18 (2020): 4140. http://dx.doi.org/10.3390/ma13184140.

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Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0–1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold curren

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Seven, Elanur, Elif Öz Orhan, and Sema Bilge Ocak. "Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation." Physica Scripta 96, no. 12 (2021): 125852. http://dx.doi.org/10.1088/1402-4896/ac369f.

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Abstract The present work intends to discover the influences of 60Co gamma (γ) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical vapor deposition (CVD) to build a Gr-based p-type Si Schottky diode. The diode was irradiated at 30 kGy and 60 kGy doses. The study has been performed at 300 K in the voltage range −6 V to +6 V at dark conditions both at 400 kHz low-frequency and 900 kHz high-frequency. The experimental results showed that dielectric features of the structur

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Luo, Lin-Bao, Shun-Hang Zhang, Rui Lu, et al. "p-type ZnTe:Ga nanowires: controlled doping and optoelectronic device application." RSC Advances 5, no. 18 (2015): 13324–30. http://dx.doi.org/10.1039/c4ra14096f.

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Maccagnani, Piera, and Marco Pieruccini. "Impact of Surface States in Graphene/p-Si Schottky Diodes." Materials 17, no. 9 (2024): 1997. http://dx.doi.org/10.3390/ma17091997.

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Graphene–silicon Schottky diodes are intriguing devices that straddle the border between classical models and two-dimensional ones. Many papers have been published in recent years studying their operation based on the classical model developed for metal–silicon Schottky diodes. However, the results obtained for diode parameters vary widely in some cases showing very large deviations with respect to the expected range. This indicates that our understanding of their operation remains incomplete. When modeling these devices, certain aspects strictly connected with the quantum mechanical features

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Selvi, Hakan, Nawapong Unsuree, Eric Whittaker, et al. "Towards substrate engineering of graphene–silicon Schottky diode photodetectors." Nanoscale 10, no. 7 (2018): 3399–409. http://dx.doi.org/10.1039/c7nr09591k.

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We present a systematic study of the performance of graphene–silicon Schottky diode photodetectors under varying operating conditions, demonstrating the influence of the substrate and interfacial oxide layer.

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Dissertations / Theses on the topic "Graphene Schottky Diode"

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BALLESIO, ALBERTO. "Graphene as an active material for sensors and other devices." Doctoral thesis, Politecnico di Torino, 2021. http://hdl.handle.net/11583/2898042.

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Yu, Hui-Chen, and 游輝震. "Si-doped Graphene Based Schottky Diode for Ammonia Gas Sensing." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/mpy7nr.

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碩士<br>國立臺灣科技大學<br>材料科學與工程系<br>106<br>This study is divided into three parts. The first part is to grow silicon-doped graphene by chemical vapor deposition using polydimethylsilane precursor by the heating belt melted. Graphene films were analyzed by Raman spectroscopy, UV-vis spectroscopy, and X-ray phototeletron spectroscopy. In the Raman spectrum, it can be found that there are differences between pure graphene (PG) and Si-doped graphene (SiG). The D band intensity for SiG is higher than for PG and the G band for SiG has a G' branch side. These differences in Raman spectra can be attributed

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Fu, Chuen-Yen, and 傅傳岩. "Graphene/silicon Schottky diode gas sensors decorated with noble metal nanoparticles." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/18395090222743579250.

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碩士<br>國立臺灣大學<br>物理研究所<br>102<br>In this thesis, we utilize the special electrical properties and high surface of graphene for the gas sensing application. Graphene prepared by chemical vapor deposition(CVD) was transferred on the patterned silicon substrate in order to form Schottky barrier diode. The thermionic theory was implemented to discuss the gas sensing mechanism. It is found that the work function of graphene is changed when the molecules of target gas were adsorbed on graphene surface. This behavior changes the Schottky barrier height between the interface of graphene and silicon as

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CHEN, KUAN YU, and 陳冠宇. "To study on graphene-like schottky diode device made from soybean oil or waste oil." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/u98je5.

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碩士<br>東海大學<br>電機工程學系<br>106<br>In this research, soybean oil and wasted engine oil are made into graphene-like materials by high-temperature rapid annealing system, and nickel and nickel films are used as catalysts. Moreover, this research uses different oil quantities as carbon sources. The samples with semiconductor behavior in the above conditions are made into the research of the Schottky diode. In the first research, different amount of used engine oil are heated at 800 degree C in a high temperature rapid thermal annealing system, with a nickel plate. Some region of samples in 0.1g and

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林建煌. "Fabrication and characterization of graphene/n-type Si Schottky diodes." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/x7c326.

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碩士<br>國立彰化師範大學<br>光電科技研究所<br>102<br>Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diodes were treated by annealing. The current–voltage characteristics in the temperature range of -120 oC ~ 30 oC were analyzed on the basis of thermionic emission theory. Through the analysis, it can be suspected that a SiOX layer at the graphene/n-type Si interfaces influences the electronic conduction through the devi

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Book chapters on the topic "Graphene Schottky Diode"

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Bandyopadhyay, Dipan, and Subir Kumar Sarkar. "Graphene Nano-Ribbon Based Schottky Barrier Diode as an Electric Field Sensor." In Computational Intelligence in Data Mining - Volume 2. Springer India, 2014. http://dx.doi.org/10.1007/978-81-322-2208-8_44.

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Mahala, Pramila, Ankita Dixit, and Navneet Gupta. "Analysis of Graphene/SiO2/p-Si Schottky Diode by Current–Voltage and Impedance Measurements." In Lecture Notes in Electrical Engineering. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-2553-3_57.

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Wang, Y., M. K. Mikhov, and B. J. Skromme. "Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.915.

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Crisci, Teresa, Luigi Moretti, Mariano Gioffrè, and Maurizio Casalino. "Near-Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials." In Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.99625.

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Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D material

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Conference papers on the topic "Graphene Schottky Diode"

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Kiat, Wong King, Razali Ismail, and M. Taghi Ahmadi. "Schottky barrier lowering effect on graphene nanoribbon based schottky diode." In 2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2013. http://dx.doi.org/10.1109/rsm.2013.6706543.

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Shi-Jun Liang and Lay Kee Ang. "Discovery of fundamental Graphene/Semiconductor Schottky diode equation." In 2015 IEEE International Vacuum Electronics Conference (IVEC). IEEE, 2015. http://dx.doi.org/10.1109/ivec.2015.7223737.

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Rahmani, Meisam, Mohammad Taghi Ahmadi, Nahid Shayesteh, Noraliah Aziziah Amin, Komeil Rahmani, and Razali Ismail. "Current-voltage modeling of Bilayer Graphene Nanoribbon Schottky Diode." In 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2011. http://dx.doi.org/10.1109/rsm.2011.6088337.

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Uddin, M. A., A. K. Singh, K. M. Daniels, M. V. S. Chandrashekhar, and G. Koley. "Impedance spectroscopic analysis of Functionalized Graphene/silicon Schottky Diode sensor." In TRANSDUCERS 2015 - 2015 18th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2015. http://dx.doi.org/10.1109/transducers.2015.7181190.

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Mirsadeghi, Seyed Mohammad, Shayan Valijam, and Alireza Salehi. "Electrical Simulation of SiC/Ge Schottky Diode with Graphene Contact." In 2019 27th Iranian Conference on Electrical Engineering (ICEE). IEEE, 2019. http://dx.doi.org/10.1109/iraniancee.2019.8786471.

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Polichetti, Tiziana, Filiberto Ricciardella, Filippo Fedi, et al. "Graphene-Si Schottky diode in environmental conditions at low NH3 ppm level." In 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2014. http://dx.doi.org/10.1109/nmdc.2014.6997412.

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Smulko, Janusz, Andrzej Kwiatkowski, Katarzyna Drozdowska, et al. "Probability distribution of flicker noise in AuNPdecorated graphene–Si Schottky barrier diode." In 2023 International Conference on Noise and Fluctuations (ICNF). IEEE, 2023. http://dx.doi.org/10.1109/icnf57520.2023.10472774.

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Kaur, Amanpreet, Xianbo Yang, Kyoung Youl Park, and Premjeet Chahal. "Reduced graphene oxide based Schottky diode on flex substrate for microwave circuit applications." In 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC). IEEE, 2013. http://dx.doi.org/10.1109/ectc.2013.6575700.

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Nigro, Maria Arcangela, Giuliana Faggio, Filippo Fedi, et al. "Cross interference effects between water and NH3 on a sensor based on graphene/silicon Schottky diode." In 2015 XVIII AISEM Annual Conference. IEEE, 2015. http://dx.doi.org/10.1109/aisem.2015.7066854.

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He, Piaopiao, Zhangfu Chen, Lianqiao Yang, Jianhua Zhang, Luqiao Yin, and Tingting Nan. "Performance enhancement of merge pin schottky diode with graphene films as heat sink by ANSYS simulation." In 2016 13th China International Forum on Solid State Lighting (SSLChina). IEEE, 2016. http://dx.doi.org/10.1109/sslchina.2016.7804354.

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