Relevant bibliographies by topics / Hetrojunction

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Hetrojunction'

Author: Grafiati
Published: 28 May 2022
Last updated: 31 July 2025

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Journal articles on the topic "Hetrojunction"

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Hamid, Kaysar, Muhammad Zobayer Bin Mukhlish, and Md Tamez Uddin. "Sunlight-activated heterostructure MoS2/CdS nanocomposite photocatalyst with enhanced photocatalytic activity: band alignment and mechanism study." RSC Advances 14, no. 52 (2024): 38908–23. https://doi.org/10.1039/d4ra06857b.

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Eck, Michael, Chuyen Van Pham, Simon Züfle, et al. "Improved efficiency of bulk heterojunction hybrid solar cells by utilizing CdSe quantum dot–graphene nanocomposites." Phys. Chem. Chem. Phys. 16, no. 24 (2014): 12251–60. http://dx.doi.org/10.1039/c4cp01566e.

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Adem, Kadhim A. "Electronic Properties of PbTe \ Si Hetrojunction." Journal of Al-Nahrain University Science 15, no. 4 (2012): 129–33. http://dx.doi.org/10.22401/jnus.15.4.16.

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Sharma, Bhupendra K., Neeraj Khare, and Shahzada Ahmad. "A ZnO/PEDOT:PSS based inorganic/organic hetrojunction." Solid State Communications 149, no. 19-20 (2009): 771–74. http://dx.doi.org/10.1016/j.ssc.2009.02.035.

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H. Shallal, Ikhlas, and Balqees A. Ahmed. "Characterization of (CIGS)/(CdS) Hetrojunction for Solar Cell." Journal of Engineering and Applied Sciences 14, no. 6 (2019): 9449–54. http://dx.doi.org/10.36478/jeasci.2019.9449.9454.

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Rani, Sanju, Manoj Kumar, Yogesh Singh, et al. "NO2 Gas Sensor Based on SnSe/SnSe2p-n Hetrojunction." Journal of Nanoscience and Nanotechnology 21, no. 9 (2021): 4779–85. http://dx.doi.org/10.1166/jnn.2021.19278.

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Air pollution is a big concern as it causes harm to human health as well as environment. NO2 can cause several respiratory diseases even in low concentration and therefore an efficient sensor for detecting NO2 at room temperature has become one of the priorities of the scientific community. Although two dimensional (2D) materials (MoS2 etc.) have shown potential for NO2 sensing at lower temperatures, but these have poor desorption kinetics. However, these limitations posed by slow desorption can be overcome, if a material in the form of a p-n junction can be suitably employed. In this work, ~1
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Nayef, Uday Muhsin, Kadhim A. Hubeatir, and Zahraa J. Abdulkareem. "Ultraviolet photodetector based on TiO2 nanoparticles/porous silicon hetrojunction." Optik 127, no. 5 (2016): 2806–10. http://dx.doi.org/10.1016/j.ijleo.2015.12.002.

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Ahssan humyan saber, Zaydon Tariq Mohammed Noori, and Kadhim A. Adem. "Electron transport mechanism of SnIn/c-Si Solar cell." Journal of Wasit for Science and Medicine 4, no. 2 (2022): 29–34. http://dx.doi.org/10.31185/jwsm.139.

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In this research was fabricated SnIn/c-Si Hetrojunction Solar Cell, where SnIn/c-Si heterojunction Solar Cell fabricated by deposition of SnIn film with thickness 500 nm on c-Si by using thermal evaporation. Electrical properties of SnIn thin film include d.c conductivity and Hall effect at different annealing temperature. From d.c conductivity found the electrical activation energies Ea1 and Ea2 increase with increasing of annealing temperature from 323K to 348K. From I-V characteristics, measurements efficiency of the found increasing from (1.5 to 4.67)% with increasing of annealing temperat
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El-Nahass, M. M., Mossad EL- Metwally, A. A. M. Farag, Shokry Menshawy, F. S. H. Abu-Samaha, and Eman Elesh. "Electrical and photovoltaic properties of CuTPP/p-Si organicinorganic hybrid hetrojunction." IOSR Journal of Applied Physics 6, no. 3 (2014): 22–29. http://dx.doi.org/10.9790/4861-06312229.

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Kumar, Neeraj, Shailendra Kumar Dwivedi, Dinesh Chandra Tiwari, and Radha Tomar. "Study of rGO-CNF/Ce-TiO2 based hetrojunction for optoelectronic devices." Materials Letters 315 (May 2022): 131945. http://dx.doi.org/10.1016/j.matlet.2022.131945.

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Dissertations / Theses on the topic "Hetrojunction"

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Mousa, A. M., and K. H. Jawad. "Performance of a Nano PbS/Si Hetrojunction Deposited by Chemical Spray Pyrolysis." Thesis, Sumy State University, 2015. http://essuir.sumdu.edu.ua/handle/123456789/42518.

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Deposition of polycrystalline Lead sulfide nano thin films onto Si and glass substrates at temperatures (200- 300 °C) was carried out by chemical spraying route using optimized preparative conditions. The XRD pattern confirmed the formation of PbS semiconducting films with orthorhombic structure. The electrical and optical properties of the nano crystalline thin films were studied aiming to better understanding for the electrical and opto-electrical properties of a hetrojunction with p-type Si. It was found that, the average grain size of PbS in the films was between 4 nm and 7 nm. The band ga
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Poh, Chung Hang. "Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31662.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Cressler, John; Committee Member: Laskar, Joy; Committee Member: Papapolymerou, John. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Manda, Malleswar. "Modeling of self heating effects in hetrojunction bipolar transistors and implementation in spice software." Ohio : Ohio University, 1996. http://www.ohiolink.edu/etd/view.cgi?ohiou1178213156.

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Thrivikraman, Tushar. "Analysis and Design of Low-Noise Amplifiers in Silicon-Germanium Hetrojunction Bipolar Technology for Radar and Communication Systems." Thesis, Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/19755.

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This thesis presents an overview of the simulation, design, and measurement of state-of-the-art Silicon-Germanium Hetro-Junction Bipolar Transistor (SiGe HBT) low-noise amplifiers (LNAs). The LNA design trade-off space is presented and methods for achieving an optimized design are discussed. In Chapter 1, we review the importance of LNAs and the benefits of SiGe HBT technology in high frequency amplifier design. Chapter 2 introduces LNA design and basic noise theory. A graphical LNA design approach is presented to aid in understanding of the high-frequency LNA design process. Chapter 3
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Wang, Zixin. "TOWARDS HIGH-PERFORMANCE PEROVSKITE SOLAR CELLS BY CATHODE INTERFACIAL ENGINEERING WITH TERNARY METAL OXIDE AND DEVICE ENGINEERING WITH BULK HETROJUNCTION." University of Akron / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=akron149520580193777.

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Huang, Chih-Shu, and 黃知澍. "Design and Fabrication of Collector-up Hetrojunction Bipolar Transistor." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/52561567733583527798.

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碩士<br>國立中央大學<br>電機工程研究所<br>90<br>In this work, there will be a detail discussion on fabrication and characteristics of collector-up hetrojunction bipolar transistor. In order to obtain a better device performance, an appropriate handle between the base-emitter junction is necessary, because the base-emitter junction in collector-up HBT is usually bigger than the base-collector junction. In this work, ion implantation method is used to reduce the base-emitter junction in order to achieve a current gain larger than 1. The base resistance (RB) and the base-collector junction capacitance (CBC) had
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Tseng, Chi-Ping, and 曾祈賓. "Fabrication of SiGe/Si Hetrojunction Dynamic Threshold Voltage MOSFETs." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/72177903971648740407.

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碩士<br>國立中央大學<br>電機工程研究所<br>92<br>Abstract In this thesis, we have demonstrated a high performance Si1-xGex（x = 0、0.3）DTMOS for low voltage、low power and high speed device applications. Measured the DC performance and compared the temperature effect between DTMOS and standard MOS at 77K、150K、300K、320K and 350K, respectively。 In our measurement, we had found that the SiGe DTMOS has higher drive current、greater transconductance、lower leakage current and ideal subthreshold slope than standard MOS. Beside, the threshold voltage and subthreshold slope of SiGe DTMOS have less sensitive for temperatu
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Hsu, Pei-Yuan, and 徐培淵. "Effect of Metal-Induced Crystallization on Porous Silicon/n-Si Hetrojunction." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/69909575253605753166.

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碩士<br>大葉大學<br>電機工程學系<br>97<br>In this experiment, porous silicon (PS)/n-Si structure has been prepared by using electrochemical anodization method at room temperature; then, the solution-based metal induced crystallization (SMIC) of porous silicon thin film was processed with various concentration of Nickel Nitrate at 550 ℃. Au/PS/n-Si and Al/PS/n-Si structures were fabricated to investigate the influences of SMIC on PS. The process can reduce leakage current, because during the etching PS by HF, many dangling bonds existed on the surface of PS as a result of trap centers, leading to large lea
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SIE, YI-DA, and 謝易達. "Hetrojunction of ZnO Nanowires and Perovskite Quantum Dots on Flexible Mica Substrate and applied in Photodetectors." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/368952.

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碩士<br>國立臺南大學<br>電機工程學系碩博士班<br>107<br>In this study, isopropyl alcohol was used as a solvent, and a sol-gel method was applied to a natural mica substrate to prepare a thin film layer of zinc oxide (ZnO), and then a hydrothermally grown zinc oxide nanowire was used. ZnO: NWs), finally coated with perovskite quantum dot solution on the surface for illuminance measurement and humidity measurement, and using SEM, EDS, TEM, XRD, XPS, PL, UV-Vis, various crystal structures analysis. Due to the interfacial charge transfer from perovskite to ZnO, the photocurrent after introduction of the ZnO layer is
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Bhardwaj, Asha. "Investigation of nanocrvstalline PbSe, Pb1-xFexSe semiconductor thin films and PbSe/Si, Pb1-xFexSe/Si hetrojunctions." Thesis, 2009. http://localhost:8080/iit/handle/2074/4345.

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Conference papers on the topic "Hetrojunction"

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Meera, A., Nisha Kuruvilla, and T. E. Ayoob Khan. "An Optimized Hetrojunction Dopingless TFET." In 2018 International Conference on Emerging Trends and Innovations In Engineering And Technological Research (ICETIETR). IEEE, 2018. http://dx.doi.org/10.1109/icetietr.2018.8529068.

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Rathore, Priyanka, Chandra Mohan SinghNegi, Ajay Singh Verma, and Saral Kumar Gupta. "Photo response of P3HT: PCBM/SWCNT bulk hetrojunction device." In 2018 3rd International Conference on Microwave and Photonics (ICMAP). IEEE, 2018. http://dx.doi.org/10.1109/icmap.2018.8354489.

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Juyal, Ruchi, and Sudakar Singh Chauhan. "TCAD simulation of Ge-GaAs hetrojunction dopingless tunnel field effect transistor." In 2016 International Conference on Communication and Signal Processing (ICCSP). IEEE, 2016. http://dx.doi.org/10.1109/iccsp.2016.7754393.

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Kavi, Kavindra Kumar, Abhishek Devedi, and R. A. Mishra. "Performace Improvement of TFET using Gate drain overlap structure with hetrojunction." In 2022 IEEE 9th Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON). IEEE, 2022. http://dx.doi.org/10.1109/upcon56432.2022.9986389.

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Uma Reddy, N. V., Rajesh Babu C, and M. V. Chaitanyakumar. "A 4 bit 5GHz R-2R Digital to Analog Converter using hetrojunction HEMT." In 2013 International Conference on Emerging Trends in Communication, Control, Signal Processing and Computing Applications (C2SPCA). IEEE, 2013. http://dx.doi.org/10.1109/c2spca.2013.6749415.

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Kumar, Pankaj, Hemant Kumar, Ramil Bhardwaj, et al. "Effect of thermal treatment on the performance of organic bulk-hetrojunction photovoltaic devices." In 2007 International Workshop on Physics of Semiconductor Devices (IWPSD '07). IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472596.

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Dixit, Khushboo, and Gufran Ahmad. "Performance Optimization of CdS/CdTe Thin Film Hetrojunction solar cell by SCAPS-1D Simulation." In 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON). IEEE, 2022. http://dx.doi.org/10.1109/edkcon56221.2022.10032893.

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Shiang Lan, Shang-Hong Lin, Chun-Wei Ku, Chia-Yu Kao, and Ching-Fuh Lin. "Enhancing morphology and charge extraction of low-bandgap bulk-hetrojunction on zno nanorod by ultrasonic treated hydrothermal growth." In 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2012. http://dx.doi.org/10.1109/nano.2012.6322203.

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Chang, C. Y., K. C. Chang, Y. K. Fang, and S. C. Jwo. "The hetrojunction amorphous n+(a-Si)/n-i-p(a-SiC)/i-n+(a-Si) phototransistor with high gain (&#8764;40) and high speed (&#8764;10&#181;s)." In 1986 International Electron Devices Meeting. IRE, 1986. http://dx.doi.org/10.1109/iedm.1986.191149.

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"Microbeam Analysis of ZnO Thin Films and ZnO-CdS Hetrojunctions." In Microscience Microscopy Congress 2023 incorporating EMAG 2023. Royal Microscopical Society, 2023. http://dx.doi.org/10.22443/rms.mmc2023.547.

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Journal articles
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