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Journal articles on the topic 'III-V technology'

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Published: 15 June 2024

Last updated: 31 July 2025

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1

Lile, D. L. "Advanced III–V semiconductor materials technology assessment." Thin Solid Films 141, no. 2 (1986): L93—L94. http://dx.doi.org/10.1016/0040-6090(86)90363-9.

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2

PEARTON, S. J. "ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY." International Journal of Modern Physics B 07, no. 28 (1993): 4687–761. http://dx.doi.org/10.1142/s0217979293003814.

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A review is given of the applications of ion implantation in III–V compound semiconductor device technology, beginning with the fundamentals of ion stopping in these materials and describing the use of implantation for both doping and isolation. There is increasing interest in the use of MeV implantation to create unique doping profiles or for the isolation of thick device structures such as heterojunction bipolar transistors or multi quantum well lasers, and we give details of these areas and the metal masking layers necessary for selective area processing. Finally, examples are given of the

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3

Zhang, John H., Stan Tsai, Charan Surisetty, et al. "CMP Challenges for Advanced Technology Nodes beyond Si." MRS Advances 2, no. 51 (2017): 2891–902. http://dx.doi.org/10.1557/adv.2017.339.

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ABSTRACTAs the scaling of the device dimensions in CMOS devices runs into physical limitations, new materials beyond Si with high electron and hole mobilities such as Ge, SiGe, and III-V materials are introduced. Challenges of CMP for these materials are reviewed in this paper. First we discussed the challenge of the new integration schemes to CMP. Loading effects can result in different growth rates for varying feature sizes, which results in a critical dimension dependent overburden. This makes it more difficult to meet the targets of the CMP process with respect to oxide loss and Ge/SiGe/II

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4

Liliental-Weber, Z., M. Li, G. S. Li, C. Chang-Hasnain, and E. R. Weber. "Structure of III-V oxides." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 942–43. http://dx.doi.org/10.1017/s0424820100167172.

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The lack of high-quality native oxides on the III-V compounds has hindered the development of III-V integrated circuits and optoelectronic technology. Recently it was shown that stable oxides can be formed in the III-V compounds rich in Al, such as AlxGa1-x As similarly as it was done in Si technology by the reaction of AlxGa1-x As with H2O vapor (in N2 carrier gas) at elevated temperatures (∼400−450°C). The high quality of these oxides was attributed to the formation of stable AlO(OH) and Al2O3 compounds. However, this conclusion was not definitive, since several Al rich compounds were propos

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5

Huber, A. M., and C. Grattepain. "Crystal Defect Study in III-V Compound Technology." Materials Science Forum 38-41 (January 1991): 1345–50. http://dx.doi.org/10.4028/www.scientific.net/msf.38-41.1345.

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6

Beneking, Heinz. "III–V Technology: The Key for Advanced Devices." Journal of The Electrochemical Society 136, no. 9 (1989): 2680–86. http://dx.doi.org/10.1149/1.2097549.

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7

Hasegawa, Hideki, and Masamichi Akazawa. "Surface passivation technology for III–V semiconductor nanoelectronics." Applied Surface Science 255, no. 3 (2008): 628–32. http://dx.doi.org/10.1016/j.apsusc.2008.07.002.

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8

Thakur, R. P. S., R. Singh, A. J. Nelson, and A. B. Swartzlander. "Role ofinsiturapid isothermal processing in advanced III‐V technology." Journal of Applied Physics 70, no. 7 (1991): 3857–61. http://dx.doi.org/10.1063/1.349191.

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9

Pearton, S. J., F. Ren, S. N. G. Chu, et al. "Applications of ion implantation in III–V device technology." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 79, no. 1-4 (1993): 648–50. http://dx.doi.org/10.1016/0168-583x(93)95434-7.

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10

Dutta, P. S. "III–V Ternary bulk substrate growth technology: a review." Journal of Crystal Growth 275, no. 1-2 (2005): 106–12. http://dx.doi.org/10.1016/j.jcrysgro.2004.10.073.

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11

Miyauchi, Eizo, and Hisao Hashimoto. "Maskless ion implantation technology for III–V compound semiconductors." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 7-8 (March 1985): 851–57. http://dx.doi.org/10.1016/0168-583x(85)90482-3.

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12

Hirano, Koki. "AWPP 2011 Report Injection Molding & Mold Technology III～V." Seikei-Kakou 24, no. 3 (2012): 148. http://dx.doi.org/10.4325/seikeikakou.24.148.

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13

Shahrjerdi, D., S. W. Bedell, B. Hekmatshoar, C. Bayram, and D. Sadana. "(Invited) New Paradigms for Cost-Effective III-V Photovoltaic Technology." ECS Transactions 50, no. 40 (2013): 15–22. http://dx.doi.org/10.1149/05040.0015ecst.

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14

Vitanov, P., M. Milanova, E. Goranova, Ch Dikov, Pl Ivanov, and V. Bakardjieva. "Solar cell technology on the base of III–V heterostructures." Journal of Physics: Conference Series 253 (November 1, 2010): 012044. http://dx.doi.org/10.1088/1742-6596/253/1/012044.

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15

Hashimoto, H., and E. Miyauchi. "Finely focused ion beam technology in III-V compound semiconductors." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 19-20 (January 1987): 381–87. http://dx.doi.org/10.1016/s0168-583x(87)80075-7.

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16

Alles, David S., and Kevin J. Brady. "Packaging Technology for III-V Photonic Devices and Integrated Circuits." AT&T Technical Journal 68, no. 1 (1989): 83–92. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00648.x.

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17

Thadathil, George. "Editorial: Technology and Evolving Social Spaces." SALESIAN JOURNAL OF HUMANITIES & SOCIAL SCIENCES 4, no. 1 (2013): v—iii. http://dx.doi.org/10.51818/sjhss.04.2013.v-iii.

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18

Ji, Chunnuan, Rongjun Qu, Qinghua Tang, et al. "Removal of trace As(V) from aqueous solution by Fe(III)-loaded porous amidoximated polyacrylonitrile." Water Supply 16, no. 6 (2016): 1603–13. http://dx.doi.org/10.2166/ws.2016.085.

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A Fe(III)-loaded chelating resin named Fe(III) AO PAN was prepared by immobilizing Fe(III) onto porous amidoximated polyacrylonitrile (AO PAN) obtained by modification of hydroxylamine with polyacrylonitrile (PAN), which was synthesized by suspended emulsion polymerization. The structures of PAN, AO PAN, and Fe(III)-AO PAN were characterized by infrared spectrometry and scanning electron microscopy. The performance of Fe(III)-AO PAN as the ligand exchange adsorbent to remove As(V) from aqueous solution was investigated using static equilibrium and dynamic adsorption experiments. The adsorption

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19

Xi, Jianhong, and Mengchang He. "Removal of Sb(III) and Sb(V) from aqueous media by goethite." Water Quality Research Journal 48, no. 3 (2013): 223–31. http://dx.doi.org/10.2166/wqrjc.2013.030.

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This study investigated the removal of Sb(III) and Sb(V) from aqueous media through their adsorption onto oxide minerals (goethite) under a set of conditions (initial Sb concentration, pH, reaction time, and interaction temperature). The kinetic studies suggested that the adsorption equilibriums for both Sb(III) and Sb(V) were achieved within 24 h. The adsorption data collected at three different temperatures were successfully modeled using both the Langmuir and Freundlich isotherms. The adsorption of Sb(III) onto goethite was greater than that of Sb(V) at the three investigated temperatures.

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20

Nayak, Bishwajit, Md Amir Hossain, Mrinal Kumar Sengupta, et al. "Adsorption Studies with Arsenic onto Ferric Hydroxide Gel in a Non-oxidizing Environment: the Effect of Co-occurring Solutes and Speciation." Water Quality Research Journal 41, no. 3 (2006): 333–40. http://dx.doi.org/10.2166/wqrj.2006.037.

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Abstract Groundwater arsenic contamination has emerged as a major health threat to millions of people around the world. Studying the sorption process of As(III) and As(V) onto ferric hydroxide gel is important to understand the mobilization of arsenic under nonoxidizing conditions. Most of the previous adsorption studies were limited to single element or multi-element equilibrium in synthetic water. To investigate the effect of matrix and speciation in real groundwater systems, adsorption tests with added As(III) and As(V) separately and in mixture were conducted in both double-distilled deion

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21

Barnett, Joel, Richard Hill, and Prashant Majhi. "Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique." Solid State Phenomena 187 (April 2012): 33–36. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.33.

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The continued scaling of CMOS devices to the sub-16 nm technology node will likely be achieved with new architectures, such as FinFETs and high mobility substrates, including compound semiconductors (III-V). At these technology nodes, abrupt channel doping profiles with high dopant activation will be needed under low thermal budget environments for III-V materials. Ion implantation into III-V materials presents a problem as it induces crystal damage, which can alter the stoichiometry in a manner that is difficult to recover. The residual damage can lead to higher junction leakage and lower dop

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22

McMORROW, DALE, JOSEPH S. MELINGER, and ALVIN R. KNUDSON. "SINGLE-EVENT EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS." International Journal of High Speed Electronics and Systems 14, no. 02 (2004): 311–25. http://dx.doi.org/10.1142/s0129156404002375.

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Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are discussed.

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23

Singh, Jay, C. L. Maurya, Rishabh Gupta, et al. "Genetic Divergence Analysis of Wheat (Triticum aestivum L.) Genotypes." Journal of Experimental Agriculture International 46, no. 5 (2024): 287–92. http://dx.doi.org/10.9734/jeai/2024/v46i52377.

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A laboratory experiment was carried out with 30 indigenous genotypes of bread wheat along with three checks in a complete randomized design for divergence analysis. The trial was conducted at Seed Technology laboratory of Acharya Narendra Deva University of Agriculture and Technology Kumarganj, Ayodhya during 2020-21. The observations were recorded on thirteen-character Test weight (1000-grain weight), seed width (mm), seed length (mm), shoot length, root length, seedling length, seedling dry weight, germination (%), first count, final count, vigour index-I, vigour index-II. The 30 genotypes g

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24

Yan, Zhao, and Qiang Li. "Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon." Journal of Physics D: Applied Physics 57, no. 21 (2024): 213001. http://dx.doi.org/10.1088/1361-6463/ad26cd.

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Abstract Epitaxial integration of III–V optical functionalities on silicon (Si) is the key to complement current Si photonics, facilitating the development of scalable, compact photonic integrated circuits. Here we aim to outline this field, focusing on the III–V semiconductor materials and the III–V lasers grown on Si. This paper is divided into two main parts: in the first part, we discuss III–V materials grown on Si, including the low-index {hhl} facets, (001) Si surface and anti-phase boundary, and dislocation engineering. The second part centres at III–V lasers grown on Si: we will first

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25

PEARTON, S. J. "REACTIVE ION ETCHING OF III–V SEMICONDUCTORS." International Journal of Modern Physics B 08, no. 14 (1994): 1781–876. http://dx.doi.org/10.1142/s0217979294000762.

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Anisotropic dry etching by a number of different techniques is widely employed in III–V compound semiconductor technology for pattern transfer, device isolation, mesa formation, grating fabrication and via hole etching. In this paper we review the different dry etching techniques, the plasma chemistries employed for III–V materials and electrical and optical changes to the near-surface of the etched sample. We give examples of the use of dry etching in fabrication of heterojunction bipolar transistors, field effect transistors and various types of semiconductor lasers. Particular attention is

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26

Pacella, Nan Y., Kunal Mukherjee, Mayank T. Bulsara, and Eugene A. Fitzgerald. "Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials." ECS Journal of Solid State Science and Technology 2, no. 7 (2013): P324—P331. http://dx.doi.org/10.1149/2.015307jss.

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27

NISHIYAMA, Nobuhiko. "Low-Temperature Direct Bonding Technology for III-V/Si Heterogeneous Integration." Review of Laser Engineering 48, no. 10 (2020): 520. http://dx.doi.org/10.2184/lsj.48.10_520.

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28

Cross, T. A., and C. R. Huggins. "Advanced single crystal III-V solar cell technology and its applications." Renewable Energy 6, no. 3 (1995): 283–90. http://dx.doi.org/10.1016/0960-1481(95)00021-b.

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29

Long, A. P., and I. G. Eddison. "Advanced III–V HEMT technology for microwave and millimetre-wave applications." Microelectronic Engineering 19, no. 1-4 (1992): 389–95. http://dx.doi.org/10.1016/0167-9317(92)90460-9.

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30

Quay, Ruediger, Arnulf Leuther, Sebastien Chartier, Laurenz John, and Axel Tessmann. "(Invited) III-V Integration on Silicon for Resource-Efficient Sensor-Technology." ECS Meeting Abstracts MA2023-01, no. 33 (2023): 1853. http://dx.doi.org/10.1149/ma2023-01331853mtgabs.

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This work deals with the wafer-level integration of advanced group III-V devices and integrated circuits on silicon substrate for RF-sensor integration, such as radar functions a very high frequencies beyond 300 GHz [1]. The aim is to achieve both performance improvements on device level, co-integration with digital functions, and advanced integration to achieve a greener usage of material critical to the environment. Submillimeter-Wave frequency bands beyond 300 GHz allow for broadband transmit and receive windows, serviceable to both communications and radar-based applications—increasing dat

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31

Quay, Ruediger, Arnulf Leuther, Sebastien Chartier, Laurenz John, and Axel Tessmann. "(Invited) III-V Integration on Silicon for Resource-Efficient Sensor-Technology." ECS Transactions 111, no. 1 (2023): 117–22. http://dx.doi.org/10.1149/11101.0117ecst.

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This work covers integration of advanced III-V semiconductors on silicon substrate for RF-sensor integration up to very high frequencies of 300 GHz and 670 GHz, respectively, including improved active device performance through intelligent engineering of the co-integrated buffer layers. Several Terahertz Monolithically-Integrated Circuits are presented, which demonstrate good gain performance, low-noise, and improve large-signal behavior through the application of the back-gate.

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32

Ji, Chunnuan, Suwen Sun, Shenghua Chi, Rongjun Qu, Changmei Sun, and Peng Yin. "Arsenic adsorption using Fe(III)-loaded porous amidoximated acrylonitrile/itaconic copolymers." Water Supply 17, no. 3 (2016): 698–706. http://dx.doi.org/10.2166/ws.2016.148.

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A highly selective polymeric ligand exchanger was developed for the removal of trace As(V) from aqueous solution. This adsorbent was prepared by loading Fe(III) onto porous amidoximated polyacrynitrile (AN)/itaconic acid (IA) copolymers (Fe(III)-AO AN/IA). Negligible ferric ion dissolution was observed from Fe(III)-AO AN/IA in solution of acidic pHs up to 2. As(V) adsorption by Fe(III)-AO AN/IA is a pH-dependent process with maximum capacity of 1.32 mg/g at pH 2–3. The adsorption process was found to be governed by pseudo-second-order kinetics, and could be described by the Freundlich model. F

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33

Gao, Luyao, Mengna Hao, Fanling Bu, et al. "As(III) removal by Fe(III)-amidoximated PAN in the presence of H2O2 through simultaneous oxidation and adsorption." Water Supply 20, no. 2 (2019): 565–73. http://dx.doi.org/10.2166/ws.2019.201.

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Abstract This study explored the efficient removal of As(III) by Fe(III)-amidoximated PAN (Fe(III) AO PAN) in the presence of H2O2 through simultaneous oxidation and adsorption. It presented that As(III) could be oxidized to As(V) efficiently in the pH range 3–9 within a short time. At the same time, the oxidized As(V) was adsorbed by Fe(III)-AO PAN. The effect of pH value, H2O2 concentration, Fe(III)-AO PAN amount, and coexisting anions on the As(III) oxidation and removal were investigated in detail. Dynamic adsorption on fixed column was also studied. Arsenic removal efficiency including As

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34

Liu, G. J., X. R. Zhang, J. Jain, J. W. Talley, and C. R. Neal. "Stability of inorganic arsenic species in simulated raw waters with the presence of NOM." Water Supply 6, no. 6 (2006): 175–82. http://dx.doi.org/10.2166/ws.2006.954.

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Effect of natural organic matter (NOM) on the stability of inorganic arsenic species in simulated raw water was examined at circumneutral pH. An ion chromatography–inductively coupled plasma mass spectrometry system was used for simultaneous determination of As(III) and As(V). A reduction of arsenate (As(V)) to arsenite (As(III)) was observed in the unfiltered simulated raw waters (USW). The As(V) reduction to As(III) did not occur in the simulated waters that passed through a 0.2 μm membrane (FSW). Microorganism activities is probably the major reason causing As(V) reduction in the USW. In th

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35

WEAVER, B. D., DALE McMORROW, and L. M. COHN. "RADIATION EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS." International Journal of High Speed Electronics and Systems 13, no. 01 (2003): 293–326. http://dx.doi.org/10.1142/s0129156403001624.

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Particle irradiation effects in III-V semiconductor devices and selected circuits are reviewed. Radiation effects concerns in III-V devices are associated primarily with displacement damage and single-event upset. In conventional transistors, displacement damage decreases the gain, increases leakage and shifts the collector-emitter offset voltage. In reduced dimensional devices. such as high electron mobility transistors and resonant tunneling diodes, the main displacement damage effect is to reduce current by increasing scattering out of the two-dimensional transport state. The current unders

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36

Biswanath, Das, N. S. Srinivas K.V., Ravindranath N., Ramesh C., Venkataiah B., and Das Ratna. "Acid catalyzed conversions of taxoids." Journal of Indian Chemistry Society Vol. 78, October-December 2001 (2001): 667–70. https://doi.org/10.5281/zenodo.5897371.

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Organic Chemistry Division-1, Indian Institute of Chemical Technology, Hyderabad-500 007, India <em>E-mail</em> : biswanathdas@yahoo.com Department of Chemistry, Gurudas College, Narkeldanga Main Road, Kolkata-700 054, India <em>Manuscript received 11 May 2001</em> Treatment of 10-deacetylbaccatin-III and baccatin-III with dilute HCI affords 10-deacetylbaccatin-V and baccatin-V, respectively. 10-Deacetylbaccatin-V is also obtained when 10-deacetylbaccatin-III is treated with ZnCI<sub>2</sub> or ZnBr<sub>2</sub> in MeOH. These two Lewis acids convert baccatin-III to 10-deacetylbaccatin-III as w

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37

Biswanath, Das, N. S. Srinivas K.V., Ravindranath N., Ramesh C., Venkataiah B., and Das Ratna. "Acid catalyzed conversions of taxoids." Journal of Indian Chemical Society Vol. 78, Oct-Dec 2001 (2001): 667–70. https://doi.org/10.5281/zenodo.5912451.

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Organic Chemistry Division-!, Indian Institute of Chemical Technology, Hyderabad-500 007, India <em>E-mail</em> : biswanathdas@yahoo.com Department of Chemistry, Gurudas College, Narkeldanga Main Road, Kolkata-700 054, India <em>Manuscript received 11 May 2001</em> Treatment of 10-deacetylbaccatin-III and baccatin-III with dilute HCI affords 10deacetylbaccatin-V and baccatin-V, respectively. 10-Deacetylbaccatin-V is also obtained when 10-deacetylbaccatin-III is treated with ZnCI<sub>2</sub> or ZnBr<sub>2</sub> in MeOH. These two Lewis acids convert baccatin-III to 10-deacetylbaccatin-III as we

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38

Ghosh, Uday Chand, Durjoy Bandyopadhyay, Biswaranjan Manna, and Manik Mandal. "Hydrous Iron(III)-Tin(IV) Binary Mixed Oxide: Arsenic Adsorption Behaviour from Aqueous Solution." Water Quality Research Journal 41, no. 2 (2006): 198–209. http://dx.doi.org/10.2166/wqrj.2006.023.

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Abstract Groundwater in the Bengal delta plain is primarily in an anoxic environment and As(III)/As(total) ratios reported are in the range of 0.60 to 0.90. Most of the studied adsorbents showed greater adsorption affinity for less toxic As(V) than for more toxic As(III). The synthesis and physicochemical characterizations of iron(III)-tin(IV) binary mixed oxide composite with systematic arsenic adsorption behaviour are reported here. The parameters studied are the effect of pH, adsorption capacity with varying arsenic loads, contact time for kinetics and isotherm modelling by batch method. In

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39

Yamaguchi, Masafumi, Frank Dimroth, Nicholas J. Ekins-Daukes, Nobuaki Kojima, and Yoshio Ohshita. "Overview and loss analysis of III–V single-junction and multi-junction solar cells." EPJ Photovoltaics 13 (2022): 22. http://dx.doi.org/10.1051/epjpv/2022020.

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The development of high-performance solar cells offers a promising pathway toward achieving high power per unit cost for many applications. Because state-of-the-art efficiencies of single-junction solar cells are approaching the Shockley-Queisser limit, the multi-junction (MJ) solar cells are very attractive for high-efficiency solar cells. This paper reviews progress in III–V compound single-junction and MJ solar cells. In addition, analytical results for efficiency potential and non-radiative recombination and resistance losses in III–V compound single-junction and MJ solar cells are present

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40

Horng, Ray-Hua, Ming-Chun Tseng, and Shui-Yang Lien. "Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate." International Journal of Photoenergy 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/108696.

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This study involved analyzing the reliability of two types of III-V solar cells: (1) III-V solar cells grown on new and recycled gallium arsenide (GaAs) substrates and (2) the III-V solar cells transferred onto an electroplated nickel (Ni) substrate as III-V thin-film solar cells by using a cross-shaped pattern epitaxial lift-off (CPELO) process. The III-V solar cells were grown on new and recycled GaAs substrates to evaluate the reliability of the substrate. The recycled GaAs substrate was fabricated by using the CPELO process. The performance of the solar cells grown on the recycled GaAs sub

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41

Singh, Tony Sarvinder, and Kamal K. Pant. "Kinetics and Mass Transfer Studies on the Adsorption of Arsenic onto Activated Alumina and Iron Oxide Impregnated Activated Alumina." Water Quality Research Journal 41, no. 2 (2006): 147–56. http://dx.doi.org/10.2166/wqrj.2006.017.

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Abstract The present investigation deals with the uptake of As(III) and As(V) ions from aqueous solution by activated alumina and a new laboratory-prepared sorbent—iron oxide impregnated activated alumina. Iron oxide impregnation onto activated alumina significantly increased the percent arsenic removal and adsorption capacity for As(III) and As(V) ions. The maximum As(III) and As(V) removals were 96.8% and 98.4%, respectively, by iron oxide impregnated activated alumina (IOIAA). Maximum As(III) and As(V) removal of 94.2% and 96.1% was observed over activated alumina. Kinetic studies were perf

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42

Sri sukmawati, Ni made, I. made Citra wibawa, and Putu Aditya antara. "Pengaruh Model Pembelajaran Science Environment Technology Society Terhadap Hasil Belajar Ilmu Pengetahuan Alam." Jurnal Ilmiah Sekolah Dasar 2, no. 3 (2018): 329. http://dx.doi.org/10.23887/jisd.v2i3.16149.

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The research was purpose to find out the differences on learning result of natural science between group of students who have been taught using learning model science environment technology society and groups of students who have been taught using conventional learning model. This research was study quasi-experiment, with non-equivalent postttest only control group design.Population of this research is all of class V SD in Gugus III Mendoyo Sub-district amounts to 129 person. The sample of this research were class V SDN 8 Penyaringan amounts to 21 personand SDN 1 Penyaringan amounts to 23 pers

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43

Chang, Y. Y., K. S. Kim, J. H. Jung, J. K. Yang, and S. M. Lee. "Application of iron-coated sand and manganese-coated sand on the treatment of both As(III) and As(V)." Water Science and Technology 55, no. 1-2 (2007): 69–75. http://dx.doi.org/10.2166/wst.2007.029.

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In this study, manganese-coated sand (MCS) and iron-coated sand (ICS) were applied in the oxidation of As(III) and adsorption of As(V), respectively. ICS and MCS were prepared by mixing FeCl3 and Mn(NO3)2, respectively, with Joomoonjin sand at 150°C. In the batch adsorption isotherms, adsorption of As(III) and As(V) onto ICS followed a Langmuir type. ICS showed a greater capacity in the removal of As(V) than As(III) and also in the removal of As(V) compared with MCS. Three different configurations of ICS and MCS were used to investigate the oxidation of As(III) and adsorption of As(V) in a col

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44

Ike, M., T. Miyazaki, N. Yamamoto, K. Sei, and S. Soda. "Removal of arsenic from groundwater by arsenite-oxidizing bacteria." Water Science and Technology 58, no. 5 (2008): 1095–100. http://dx.doi.org/10.2166/wst.2008.462.

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The presence of arsenic in groundwater has been of great public concern because of its high toxicity. For purification of arsenic-contaminated groundwater, bacterial oxidation of arsenite, As(III), with a chemical adsorption process was examined in this study. After As(III) oxidation to arsenate, As(V), arsenic is easily removable from contaminated groundwater because As(V) is more adsorptive to absorbents than As(III). By acclimation to As(III) of high concentrations, a mixed culture of heterotrophic bacteria with high As(III)-oxidizing activity was obtained from a soil sample that was free f

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Takenaka, Mitsuru, and Shinichi Takagi. "III-V/Ge Device Engineering for CMOS Photonics." Materials Science Forum 783-786 (May 2014): 2028–33. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.2028.

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Heterogeneous integration of III-V compound semiconductors and Ge on the Si platform is one of the promising technologies for enhancing the performance of metal-oxide-semiconductor field effect transistors (MOSFETs) beyond the 10-nm technology node because of their high carrier mobilities. In addition, the III-Vs and Ge are also promising materials for photonic devices. Thus, we have investigated III-V/Ge device engineering for CMOS photonics, enabling monolithic integration of high-performance III-V/Ge CMOS transistors and III-V/Ge photonics on Si. The direct wafer bonding of III-V on Si has

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Ai, L. Nguyen, A. Sato, D. Inoue, K. Sei, S. Soda, and M. Ike. "Enrichment of arsenite oxidizing bacteria under autotrophic conditions and the isolation and characterization of facultative chemolithoautotrophic arsenite oxidizing bacteria for removal of arsenic from groundwater." Water Supply 12, no. 5 (2012): 707–14. http://dx.doi.org/10.2166/ws.2012.045.

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Arsenic contamination in groundwater has caused severe health problems throughout the world. Developing cost-effective processes for arsenic removal is an emerging issue. Because As(III) is predominant in groundwater and is more difficult to remove than As(V) is, oxidation of As(III) to As(V) is necessary to improve overall arsenic removal. This study was undertaken to enrich arsenite oxidizing bacteria under autotrophic conditions and to isolate and characterize facultative chemolithoautotrophic arsenite oxidizing bacteria (CAOs) that can oxidize As(III) effectively to As(V). An enrichment cu

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Du, Yong, Buqing Xu, Guilei Wang, et al. "Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon." Nanomaterials 12, no. 5 (2022): 741. http://dx.doi.org/10.3390/nano12050741.

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Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology. To achieve high performance OEICs, the crystal quality of the group III-V epitaxial layer plays an extremely vital role. However, there are several challenges for high quality group III-V material growth on Si, such as a large lattice mismatch, highly thermal expansion coefficient difference, and huge dissimilarity between group III-V material a

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Hiraki, Tatsurou, Takuma Aihara, Koji Takeda, et al. "III–V/Si integration technology for laser diodes and Mach–Zehnder modulators." Japanese Journal of Applied Physics 58, SB (2019): SB0803. http://dx.doi.org/10.7567/1347-4065/ab0741.

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Lee, R. T. P., W. Y. Loh, R. Tieckelmann, et al. "(Invited) Technology Options to Reduce Contact Resistance in Nanoscale III-V MOSFETs." ECS Transactions 66, no. 4 (2015): 125–34. http://dx.doi.org/10.1149/06604.0125ecst.

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Deshpande, V. V., V. Djara, D. Caimi, et al. "(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology." ECS Transactions 69, no. 10 (2015): 131–42. http://dx.doi.org/10.1149/06910.0131ecst.

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