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Journal articles on the topic 'Ion-plasma deposition'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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1

Rossnagel, S. M., and J. J. Cuomo. "Ion-Beam-Assisted Deposition and Synthesis." MRS Bulletin 12, no. 2 (1987): 40–51. http://dx.doi.org/10.1557/s0883769400068391.

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Concurrent energetic particle bombardment during film deposition can strongly modify the structural and chemical properties of the resulting thin film. The interest in this technique, ion-assisted deposition, comes about because it can be used to produce thin films with properties not achievable by conventional deposition. Bombardment by low energy ions occurs during almost all plasma-based thin film deposition techniques. Bombardment of a growing film, particularly by accelerated ions, can also be combined with non-plasma-based deposition techniques, such as evaporation, to simulate some of t
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2

JangJian, Shiu-Ko, and Ying-Lang Wang. "Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System." Active and Passive Electronic Components 2007 (2007): 1–5. http://dx.doi.org/10.1155/2007/15754.

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The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD) system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR) of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS), respectively. The experimental results show that the PCR drastically decreases with Cu substrate com
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3

Petrikowski, Kerstin, Martin Fenker, and Holger Kaßner. "Influence of process parameters including the confining magnetic field of a plasma beam source on the deposition of N‐doped hydrogenated carbon films." Journal of Technological and Space Plasmas 4, no. 1 (2023): 140–50. http://dx.doi.org/10.31281/jtsp.v4i1.29.

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Electrically conductive nitrogen‐doped hydrogenated carbon films (a‐C:H:N) were deposited using a nitrogenacetylene gas mixture by plasma‐assisted chemical vapor deposition (PACVD). A capacitively coupled plasma beam source was used for the depositions. The plasma is excited by a radio‐frequency (RF) discharge and confined by Helmholtz magnetic coils, resulting in an increase in plasma density. The ion energy, as well as the deposition rate, can be controlled by the choice of the size of the coupling electrode, i.e. the ratio of cathode-to‐anode area, the electric current at the Helmholtz magn
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4

Ryabchikov, Alexander, Denis Sivin, and Igor Stepanov. "Development of New Ion and Plasma Surface Modification Methods." Advanced Materials Research 1084 (January 2015): 221–24. http://dx.doi.org/10.4028/www.scientific.net/amr.1084.221.

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The review is devoted to the analysis of the present state-of-the-art and development trends of the new methods and equipment being developed in Tomsk Polytechnic University (TPU), for DC vacuum arc-based ion and plasma materials processing. The features and advantages are demonstrated for the method of high-concentration implantation with compensation of surface ion sputtering by metal plasma deposition, the method of metal plasma deposition under repetitively – pulsed ion mixing with ion beams and plasma flow formed in the «Raduga-5» source, and the method of coating deposition and ion impla
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5

Rossnagel, S. M., and J. J. Cuomo. "Ion Beam Deposition, Film Modification and Synthesis." MRS Bulletin 13, no. 12 (1988): 40–45. http://dx.doi.org/10.1557/s0883769400063685.

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Ion beam processing for thin film deposition is rapidly overtaking some of the more conventional plasma-based thin film processing techniques. This is due to strong improvements in the types and reliabilities of the sources available as well as a growing understanding of the advantages and capabilities of using ion beams.An ion beam process can be differentiated from a plasma-based process in that the plasma in an ion beam is generated away from the sample and a beam of ions is directed at the sample. In a plasma-based process, the sample is usually immersed in the plasma. This highlights the
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6

Kim, Kwang Pyo, Wan Soo Song, Min Kyu Park, and Sang Jeen Hong. "Surface Analysis of Amorphous Carbon Thin Film for Etch Hard Mask." Journal of Nanoscience and Nanotechnology 21, no. 3 (2021): 2032–38. http://dx.doi.org/10.1166/jnn.2021.18919.

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When the aspect ratio of a high aspect ratio (HAR) etching process is greatly increased, an amorphous carbon layer (ACL) hard mask is required for dynamic random-access memory (DRAM). To improve the durability of an etch hard mask, an understanding of the plasma deposition mechanisms and the deposited film properties associated with the plasma conditions and atomic structure, respectively, is required. We performed a series of plasma depositions, material characterizations and dry-etching to investigate the effect of the deposition process condition on the surface characteristics of an ACL fil
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7

Shiono, T., T. Shibuya, Y. Harano, E. Yabe, and K. Takayama. "Ion source with plasma cathode for ion assisted deposition." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 37-38 (February 1989): 166–68. http://dx.doi.org/10.1016/0168-583x(89)90160-2.

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8

Gosar, Žiga, Janez Kovač, Miran Mozetič, Gregor Primc, Alenka Vesel, and Rok Zaplotnik. "Deposition of SiOxCyHz Protective Coatings on Polymer Substrates in an Industrial-Scale PECVD Reactor." Coatings 9, no. 4 (2019): 234. http://dx.doi.org/10.3390/coatings9040234.

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The deposition of protective coatings on aluminised polymer substrates by a plasma enhanced chemical vapour deposition PECVD technique in a plasma reactor with a volume of 5 m3 was studied. HMDSO was used as a precursor. Plasma was sustained in a capacitively coupled radiofrequency (RF) discharge powered by an RF generator operating at 40 kHz and having an adjustable output power up to 8 kW. Gaseous plasma was characterised by residual gas mass spectrometry and optical emission spectroscopy. Polymer samples with an average roughness of approximately 5 nm were mounted into the plasma reactor an
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9

Xiaojun Yin, Shuaifeng Zhao, Shuguo Fei, et al. "Plasma ion-assisted deposition in UV filters." Chinese Optics Letters 8, S1 (2010): 59–61. http://dx.doi.org/10.3788/col201008s1.0059.

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10

Li, Guoqing, Cui Liu, Jianfeng Li, Chengwu Zhang, Zongxin Mu, and Zhenhu Long. "Plasma-ion beam source enhanced deposition system." Surface and Coatings Technology 193, no. 1-3 (2005): 112–16. http://dx.doi.org/10.1016/j.surfcoat.2004.07.040.

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11

Siambis, John. "Large-scale industrial plasma-ion deposition processes." Journal of Fusion Energy 12, no. 4 (1993): 401. http://dx.doi.org/10.1007/bf01054827.

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12

Dostanko, A. P., S. I. Madveyko, E. V. Telesh, S. N. Melnikov, S. M. Zavadski, and D. A. Golosov. "Plasma Systems in Thin Film Technology." Doklady BGUIR 22, no. 2 (2024): 20–31. http://dx.doi.org/10.35596/1729-7648-2024-22-2-20-31.

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The article discusses the current trends in the development of ion-plasma systems for ion processing and thin film deposition. Application of pulsed reactive magnetron sputtering for deposition of vanadium oxide films and dependence of process parameters on power supply frequency characteristics, peculiarities and application of direct ion-beam deposition for formation of coatings based on SiO2 for optical coatings, SiO2, CH, CN, CHF for orientation coatings of LCD displays, wear-resistant coatings of diamond-like carbon (α-C) and carbon nitride (CNx) are considered. The advantages of continuo
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13

Meyyappan, M., and T. R. Govindan. "Plasma Process Modeling for Integrated Circuits Manufacturing." VLSI Design 6, no. 1-4 (1998): 409–12. http://dx.doi.org/10.1155/1998/27636.

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A reactor model for plasma-based deposition and etching is presented. Two-dimensional results are discussed in terms of plasma density, ion flux, and ion energy. Approaches to develop rapid CAD-type models are discussed.
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14

Kozyrev A. B., Volpyas V. A., Tumarkin A. V., et al. "Ion-plasma deposition of multicomponent films with a given law of composition distribution by thickness." Technical Physics Letters 49, no. 2 (2023): 58. http://dx.doi.org/10.21883/tpl.2023.02.55374.19429.

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A method is proposed for ion-plasma deposition of thin multicomponent films with the ability to control the component composition in thickness (graded film) with a change in the pressure of the working gas according to a given law. Using the BaxSr1-xTiO3 (BSTO)perovskite-type structure as an example, the calculated (Monte Carlo simulation) and experimental dependences of the component composition of films and their deposition rate on the pressure of the working gas were obtained. As an example, the possibility of deposition of BSTO films with a linear distribution of composition by their thick
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15

Masyanov, A. A. "Application of plasma methods for the synthesis of nanostructures." Journal of Physics: Conference Series 2270, no. 1 (2022): 012051. http://dx.doi.org/10.1088/1742-6596/2270/1/012051.

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Abstract There are many plasma methods for the synthesis of nanostructures, for example, the plasma-chemical vapor deposition method, the cathode-arc deposition method, the plasma jet method, the ion sputtering method, etc. Each of the listed methods can be organized in various ways, and each method is suitable for creating certain nanostructure.
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16

Chun, S. Y. "Metal Plasma Source Ion Implantation Using a Pulsed Cathodic Arc." Materials Science Forum 534-536 (January 2007): 1397–400. http://dx.doi.org/10.4028/www.scientific.net/msf.534-536.1397.

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Combining nano-designed plasma source ion implantation and deposition (PSII&D) method has been developed with the pulsed cathodic arc plasma to make a processing system suitable for surface modification of materials such as metals, plastics and ceramics. By controlling the arc plasma pulse and the target pulse, the surface modification can be changed from plasma deposition to ion implantation. Various versions of applying high-voltage pulse bias are described and compared with other methods. Microstructural changes of the nanometered gold films with/without a high voltage bias, concentrati
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17

Pongratz, S., and A. Zoller. "Plasma ION-Assisted Evaporative Deposition of Surface Layers." Annual Review of Materials Science 22, no. 1 (1992): 279–94. http://dx.doi.org/10.1146/annurev.ms.22.080192.001431.

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18

Profijt, H. B., and W. M. M. Kessels. "Ion Bombardment during Plasma-Assisted Atomic Layer Deposition." ECS Transactions 50, no. 13 (2013): 23–34. http://dx.doi.org/10.1149/05013.0023ecst.

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19

Pongratz, S., and A. Zöller. "Ion assisted deposition with an advanced plasma source." Radiation Effects and Defects in Solids 127, no. 3-4 (1994): 327–39. http://dx.doi.org/10.1080/10420159408221041.

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20

Hu, Ke, and R. S. Houk. "Ion deposition by inductively coupled plasma mass spectrometry." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14, no. 2 (1996): 370–73. http://dx.doi.org/10.1116/1.579903.

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21

Oechsner, H. "Ion and plasma beam assisted thin film deposition." Thin Solid Films 175 (August 1989): 119–27. http://dx.doi.org/10.1016/0040-6090(89)90818-3.

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22

Il’ichev, L. L., and V. I. Rudakov. "Deposition of ion-plasma coatings on tool steels." Russian Engineering Research 30, no. 3 (2010): 311–14. http://dx.doi.org/10.3103/s1068798x10030275.

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23

Matl, K., W. Klug, and A. Zöller. "Ion-assisted deposition with a new plasma source." Materials Science and Engineering: A 140 (July 1991): 523–27. http://dx.doi.org/10.1016/0921-5093(91)90473-z.

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24

Hui, Bing, Xiuhua Fu, Des Gibson, et al. "Automated Control of Plasma Ion-Assisted Electron Beam-Deposited TiO2 Optical Thin Films." Coatings 8, no. 8 (2018): 272. http://dx.doi.org/10.3390/coatings8080272.

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A hollow cathode plasma source has been operated automatically, demonstrating independent control of plasma ion energy and ion current density for plasma ion-assisted electron beam-deposited titania (TiO2). The lanthanum hexaboride hollow cathode design described in this work utilizes both the interior and exterior cathode surfaces, with the additional electrons generated removing the need for a separate neutralizing source. Automatic feedback control of plasma source cathode-to-anode accelerator voltage (AV—via argon gas flow to the anode and/or cathode plasma source areas) and accelerator cu
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25

Kralkina, Elena A., Polina A. Nekludova, Alexander M. Nikonov, Alexandr A. Airapetov, Vadim A. Sologub, and Nikolay A. Dyuzhev. "Formation of Nanosized Coatings in Hybrid Plasma Reactor Combining Magnetron or Arc Deposition with RF Plasma Assistance." Materials Science Forum 900 (July 2017): 137–40. http://dx.doi.org/10.4028/www.scientific.net/msf.900.137.

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The hybrid plasma reactor is based on the combined magnetron or arc discharge and radio-frequency inductive discharge located in the external magnetic field. Magnetron or arc discharge provides the generation of atoms and ions of the target materials while the flow of accelerated ions used for the ion assistance is provided by the RF inductive discharge. An external magnetic field is used to optimize the power input to the discharge, to increase the ion current density in the realm of substrate and to enhance the area of uniform plasma. The high value of the ion flow bombarding the substrate g
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26

Aleksandrov, D. A., S. A. Muboyadzhyan, and D. S. Gorlov. "INCREASING REINFORCING PROPERTIES OF ION-PLASMA COATINGS USING PLASMA ASSISTED DEPOSITION." Proceedings of VIAM, no. 7 (2015): 7. http://dx.doi.org/10.18577/2307-6046-2015-0-7-7-7.

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27

Mandl, S., and B. Rauschenbach. "Plasma stream homogeneity in metal plasma immersion ion implantation and deposition." IEEE Transactions on Plasma Science 31, no. 5 (2003): 968–72. http://dx.doi.org/10.1109/tps.2003.818417.

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28

Ikehata, T., R. Sasaki, T. Tanaka, and K. Yukimura. "Positive-plasma-bias method for plasma-based ion implantation and deposition." Surface and Coatings Technology 204, no. 18-19 (2010): 2881–91. http://dx.doi.org/10.1016/j.surfcoat.2010.03.004.

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29

Zhao, Yongtao, Zhanghu Hu, Rui Cheng, et al. "Trends in heavy ion interaction with plasma." Laser and Particle Beams 30, no. 4 (2012): 679–706. http://dx.doi.org/10.1017/s0263034612000626.

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AbstractIn this work, we review current trends in China to investigate beam plasma interaction phenomena. Recent progresses in China on low energy heavy ions and plasma interaction, ion beam-plasma interactions under the influences of magnetic fields, high energy heavy ion radiography through marginal range method, energy deposition of highly charged ions on surfaces and Raman spectroscopy of surfaces after irradiation of highly charged ions are presented.
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30

FUJIMAKI, S., T. OHNO, Y. KOKAKU, and Y. HONDA. "PREPARATION OF ULTRA THIN CARBON OVERCOAT FOR MAGNETIC RECORDING MEDIUM BY HOT FILAMENT PLASMA CVD." International Journal of Modern Physics B 16, no. 06n07 (2002): 973–77. http://dx.doi.org/10.1142/s0217979202010701.

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The deposition process of carbon coating by plasma CVD was studied for the development of a high-density magnetic disk with an ultra thin overcoat of about 4nm thickness. A hot filament discharge system was installed to disk production equipment for the simultaneous deposition of a carbon thin coating on both sides of the disk. The hot filament high-density plasma, in a low-pressure atmosphere of 0.5Pa, was found to be more advantageous, compared with other CVD sources, such as radio frequency plasma, in deposition of the hard carbon thin coating on a negatively biased substrate with ion incid
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31

Béchu, S., O. Maulat, Y. Arnal, D. Vempaire, A. Lacoste, and J. Pelletier. "Multi-dipolar plasmas for plasma-based ion implantation and plasma-based ion implantation and deposition." Surface and Coatings Technology 186, no. 1-2 (2004): 170–76. http://dx.doi.org/10.1016/j.surfcoat.2004.04.036.

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32

Yukimura, Ken, Xinxin Ma, and Takashi Ikehata. "TiN deposition and ion current distribution for trench target by plasma-based ion implantation and deposition." Surface and Coatings Technology 193, no. 1-3 (2005): 17–21. http://dx.doi.org/10.1016/j.surfcoat.2004.08.133.

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33

Кобяков, А. В., И. А. Турпанов, Г. С. Патрин, Р. Ю. Руденко, В. И. Юшков та Н. Н. Косырев. "Структурные и магнитные свойства систем Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Ge-p/Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Co". Журнал технической физики 89, № 2 (2019): 268. http://dx.doi.org/10.21883/jtf.2019.02.47082.198-18.

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AbstractThe Al_2O_3/Ge- p /Al_2O_3/Co system with an Al_2O_3 buffer layer deposited by ion-plasma sputtering has been experimentally investigated. The dependences of the magnetic properties of cobalt on the rate of its deposition by ion-plasma sputtering and rate of deposition of preceding layers have been established. It is shown that the technique used to obtain buffer layers can significantly reduce the surface roughness of the next layers. The obtained buffer layers can be used as artificial substrates for growing heterostructures with tunnel junctions.
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34

Boulard, François, Valentin Bacquié, Aurélien Tavernier, and Nicolas Possémé. "Role of SiCl4 addition in CH3F/O2 based chemistry for Si3N4 etching selectively to SiO2, SiCO, and Si." Journal of Vacuum Science & Technology A 41, no. 3 (2023): 033002. http://dx.doi.org/10.1116/6.0002434.

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Dry etching of amorphous silicon nitride (Si3N4) selectively toward silicon dioxide (SiO2), silicon oxicarbide (SiCO), and crystalline silicon (c-Si) in an inductive coupled plasma reactor using CHF3/O2/He chemistry with SiCl4 addition is studied. Plasma exposure of c-Si, SiO2, and SiCO leads to an oxifluoride deposition. The deposition rate is the same for all these materials and increases linearly with the amount of SiCl4 added. On the other hand, Si3N4 etching is observed at very small amount of SiCl4 added (2 SCCM), while oxide deposition takes place at higher SiCl4 flow (10 SCCM). Quasi-
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35

Yamashita, Yu, Shinya Sakuma, and Yoko Yamanishi. "On-Demand Metallization System Using Micro-Plasma Bubbles." Micromachines 13, no. 8 (2022): 1312. http://dx.doi.org/10.3390/mi13081312.

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3D wiring technology is required for the integration of micro–nano devices on various 3D surfaces. However, current wiring technologies cannot be adapted to a variety of materials and surfaces. Here, we propose a new metal deposition method using only a micro-plasma bubble injector and a metal ion solution. Micro-plasma bubbles were generated on demand using pulses, and the localized reaction field enables metal deposition independent of the substrate. Three different modes of micro-plasma bubble generation were created depending on the power supply conditions and mode suitable for metal depos
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36

Stepanov, Igor, Alexander Ryabchikov, and Denis Sivin. "Very Broad Metal Ion Beam Source for Ion Implantation and Coating Deposition Technologies." Advanced Materials Research 880 (January 2014): 288–91. http://dx.doi.org/10.4028/www.scientific.net/amr.880.288.

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The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc driven vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the a
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37

Shao-ping Zhu. "A unified derivation of the laser energy deposition coefficient, electron thermal conduction coefficient and resistivity in the plasma." Acta Physica Sinica 74, no. 11 (2025): 0. https://doi.org/10.7498/aps.74.20250340.

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The laser energy deposition coefficient, the electron thermal conduction coefficient, and the resistivity are three important physical quantities in plasma physics. For a multi-ion-component plasma, considering only the collisional interaction between electrons and ions, starting from the kinetic equation under the Fokker-Planck approximation and using multi-timescale method, a unified derivation of the laser energy deposition coefficient, electron thermal conduction coefficient and resistivity in the plasma is presented.
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38

Hubička, Zdenek, Martin Zlámal, Jiri Olejníček, Drahoslav Tvarog, Martin Čada, and Josef Krýsa. "Semiconducting p-Type Copper Iron Oxide Thin Films Deposited by Hybrid Reactive-HiPIMS + ECWR and Reactive-HiPIMS Magnetron Plasma System." Coatings 10, no. 3 (2020): 232. http://dx.doi.org/10.3390/coatings10030232.

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A reactive high-power impulse magnetron sputtering (r-HiPIMS) and a reactive high-power impulse magnetron sputtering combined with electron cyclotron wave resonance plasma source (r-HiPIMS + ECWR) were used for the deposition of p-type CuFexOy thin films on glass with SnO2F conductive layer (FTO). The aim of this work was to deposit CuFexOy films with different atomic ratio of Cu and Fe atoms contained in the films by these two reactive sputtering methods and find deposition conditions that lead to growth of films with maximum amount of delafossite phase CuFeO2. Deposited copper iron oxide fil
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39

Mantese, Joseph V., Ian G. Brown, Nathan W. Cheung, and George A. Collins. "Plasma-Immersion Ion Implantation." MRS Bulletin 21, no. 8 (1996): 52–56. http://dx.doi.org/10.1557/s0883769400035727.

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Plasma-immersion ion implantation (PIII) is an emerging technology for the surface engineering of semiconductors, metals, and dielectrics. It is inherently a batch-processable technique that lends itself to the implantation of large numbers of parts simultaneously. It thus offers the possibility of introducing ion implantation into manufacturing processes that have not traditionally been feasible using conventional implantation.In PIII the part to be treated is placed in a vacuum chamber in which is generated a plasma containing the ions of the species to be implanted. The plasma based implant
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40

Misiruk, Ivan O., Oleksandr I. Timoshenko, Valeriy S. Taran, and Igor E. Garkusha. "Non-self-sustained discharge with hollow anode for plasma-based surface treatment." Nukleonika 61, no. 2 (2016): 195–99. http://dx.doi.org/10.1515/nuka-2016-0033.

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Abstract The paper discusses plasma methods for surface modification using the non-self-sustained glow discharge with a hollow anode. This discharge is characterised by low voltage and high values of electron and ion currents. It can be easily excited in vacuum-arc installations that are widely used for coatings deposition. It is shown that such type of discharge may be effectively used for ion pumping, film deposition, ion etching, diffusion saturation of metallic materials, fusion and brazing of metals, and for combined application of above mentioned technologies in a single vacuum cycle.
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41

Lee, Chao-Yu, Fa-Hsing Yeh, and Ing-Song Yu. "A Commercial Carbonaceous Anode with a-Si Layers by Plasma Enhanced Chemical Vapor Deposition for Lithium Ion Batteries." Journal of Composites Science 4, no. 2 (2020): 72. http://dx.doi.org/10.3390/jcs4020072.

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In this study, we propose a mass production-able and low-cost method to fabricate the anodes of Li-ion battery. Carbonaceous anodes, integrated with thin amorphous silicon layers by plasma enhanced chemical vapor deposition, can improve the performance of specific capacity and coulombic efficiency for Li-ion battery. Three different thicknesses of a-Si layers (320, 640, and 960 nm), less than 0.1 wt% of anode electrode, were deposited on carbonaceous electrodes at low temperature 200 °C. Around 30 mg of a-Si by plasma enhanced chemical vapor deposition (PECVD) can improve the specific capacity
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42

Nadtoka, V., M. Kraiev, A. Borisenko, and V. Kraieva. "Multi-component nitrated ion-plasma Ni-Cr coating." Journal of Physics and Electronics 29, no. 1 (2021): 61–64. http://dx.doi.org/10.15421/332108.

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Method for ion-plasma deposition is applied for covering of heat-resistant Ni-Cr alloy XH78T. Coating deposition is performed under nitrogen gas atmosphere at the pressure from 3×10-5 to 1×10-2 Torr. The nitrogen content in the coating is reached up to 2,7 %. Nitrated coatings with a thickness of 184-222 μm is obtained without embrittlement and with a uniform distribution of microhardness. The effect of the nitrogen pressure in a vacuum chamber on the structure of the coatings, which changes from homogeneous to columnar with conical crystallites, is presented. Nitration increases microhardness
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43

Zeng, Z. M., X. B. Tian, and P. K. Chu. "Ion enhanced deposition by dual titanium and acetylene plasma immersion ion implantation." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 21, no. 1 (2003): 175–79. http://dx.doi.org/10.1116/1.1531136.

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44

Dietrich, K. G., K. Mahrt-Olt, J. Jacoby, et al. "Beam–plasma interaction experiments with heavy-ion beams." Laser and Particle Beams 8, no. 4 (1990): 583–93. http://dx.doi.org/10.1017/s0263034600009010.

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The progress of the experimental research program at GSI for studying beam-plasma interaction phenomena is reported. Heavy-ion beams from the new accelerator facility SIS/ESR at GSI-Darmstadt are now available for experiments, and will soon deliver ≥ 109 particles per pulse in 100 ns. Focused on a small sample of matter, the beams will be able to produce a high-density plasma and to permit investigation of interaction processes of heavy ions with hot ionized matter.For the intense beam from the new heavy-ion synchrotron (SIS), a fine-focus system has been designed to produce a high specific de
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45

Anders, André. "Metal plasma immersion ion implantation and deposition using vacuum arc plasma sources." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12, no. 2 (1994): 815. http://dx.doi.org/10.1116/1.587351.

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Kim, Young, Nina Baule, Maheshwar Shrestha, Bocong Zheng, Thomas Schuelke, and Qi Hua Fan. "Single-beam plasma source deposition of carbon thin films." Review of Scientific Instruments 93, no. 11 (2022): 113908. http://dx.doi.org/10.1063/5.0102605.

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A single-beam plasma source was developed and used to deposit hydrogenated amorphous carbon ( a-C:H) thin films at room temperature. The plasma source was excited by a combined radio frequency and direct current power, which resulted in tunable ion energy over a wide range. The plasma source could effectively dissociate the source hydrocarbon gas and simultaneously emit an ion beam to interact with the deposited film. Using this plasma source and a mixture of argon and C2H2 gas, a-C:H films were deposited at a rate of ∼26 nm/min. The resulting a-C:H film of 1.2 µm thick was still highly transp
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HIROTA, Satoshi, Rainer CREMER, and Tetsuya TAKAHASHI. "Comparison of Plasma Ion Deposition Processes at Industrial Scale." Journal of the Vacuum Society of Japan 60, no. 9 (2017): 362–64. http://dx.doi.org/10.3131/jvsj2.60.362.

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Miyagawa, Yoshiko, Masaaki Tanaka, Hiroshi Nakadate, Setsuo Nakao, and Soji Miyagawa. "Computer Simulation of Plasma Immersion Ion Implantation and Deposition." IEEJ Transactions on Fundamentals and Materials 123, no. 8 (2003): 724–30. http://dx.doi.org/10.1541/ieejfms.123.724.

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Ziegelbauer, Joseph Michael, Lu Liu, Chunmei Ban, Zhiming Liang, and Shawn Gayden. "Reimagining Li-Ion Electrode Fabrication Via Cold Plasma Deposition." ECS Meeting Abstracts MA2021-01, no. 2 (2021): 176. http://dx.doi.org/10.1149/ma2021-012176mtgabs.

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Lee, D. H., K. C. Walter, and M. Nastasi. "Processing of diamondlike carbon using plasma immersion ion deposition." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 2 (1999): 818. http://dx.doi.org/10.1116/1.590645.

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