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Journal articles on the topic 'Low Thermal Budget'

Author: Grafiati

Published: 9 March 2023

Last updated: 31 July 2025

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1

Sharangpani, R., K. C. Cherukuri, and R. Singh. "Low thermal budget processing of organic dielectrics." IEEE Transactions on Electron Devices 43, no. 7 (1996): 1168–70. http://dx.doi.org/10.1109/16.502430.

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2

Pradeepkumar, Maurya Sandeep, Harsh Vardhan Singh, Sooraj Kumar, Joysurya Basu, and Md Imteyaz Ahmad. "Low thermal budget processing of CdS thin films." Materials Letters 280 (December 2020): 128560. http://dx.doi.org/10.1016/j.matlet.2020.128560.

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3

Bhat, N., A. W. Wang, and K. C. Saraswat. "Rapid thermal anneal of gate oxides for low thermal budget TFT's." IEEE Transactions on Electron Devices 46, no. 1 (1999): 63–69. http://dx.doi.org/10.1109/16.737442.

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4

Michael, Aron, and Chee Yee Kwok. "Evaporated Thick Polysilicon Film With Low Stress and Low Thermal Budget." Journal of Microelectromechanical Systems 22, no. 4 (2013): 825–27. http://dx.doi.org/10.1109/jmems.2013.2248129.

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5

Kuo, Yue. "Pulsed Rapid Thermal Annealing as a Low Thermal Budget Semiconductor Fabrication Process." ECS Meeting Abstracts MA2023-01, no. 29 (2023): 1776. http://dx.doi.org/10.1149/ma2023-01291776mtgabs.

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Thermal annealing is required in the fabrication of many semiconductor devices. A proper annealing condition, e.g., temperature, atmosphere, and time, can improve the device performance, e.g., by reducing defect densities in bulk films and at interfaces. In addition, the annealing step can generate new structures in previously deposited thin films for various new functions. However, when the annealing condition is improper, e.g., the temperature is too high or the annealing time is too long, the device performance can deteriorate or dysfunction due to damage to the composing material, structur

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6

Mazzamuto, Fulvio, Sebastien Halty, Hideaki Tanimura, and Yoshihiro Mori. "Low Thermal Budget Ohmic Contact Formation by Laser Anneal." Materials Science Forum 858 (May 2016): 565–68. http://dx.doi.org/10.4028/www.scientific.net/msf.858.565.

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In this work, we demonstrate the possibility to achieve an ohmic contact using a low thermal budget applicable to backside processing after wafer thinning. The process window for laser annealing as a function of the thinning process is investigated. By laser melt annealing, we demonstrate the possibility for different silicide phases from pure nickel deposition on thinned 4H-SiC, formation of uniform carbon nanoclusters at the metal/SiC interface and recovery of thinning-induced defects. This has been demonstrated as a function of different thinning process and surface conditions.

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7

König, U., and J. Hersener. "Needs of Low Thermal Budget Processing in SiGe Technology." Solid State Phenomena 47-48 (July 1995): 17–32. http://dx.doi.org/10.4028/www.scientific.net/ssp.47-48.17.

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8

Kang, Il-Suk, Sung-Hun Yu, Hyun-Sang Seo, et al. "Low Thermal Budget Crystallization of Amorphous Silicon by Nanoclusters." Electrochemical and Solid-State Letters 12, no. 9 (2009): H319. http://dx.doi.org/10.1149/1.3152594.

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9

Abbadie, A., J. M. Hartmann, P. Holliger, M. N. Séméria, P. Besson, and P. Gentile. "Low thermal budget surface preparation of Si and SiGe." Applied Surface Science 225, no. 1-4 (2004): 256–66. http://dx.doi.org/10.1016/j.apsusc.2003.10.018.

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10

Simon, Daniel K., Thomas Henke, Paul M. Jordan, et al. "Low-thermal budget flash light annealing for Al2O3surface passivation." physica status solidi (RRL) - Rapid Research Letters 9, no. 11 (2015): 631–35. http://dx.doi.org/10.1002/pssr.201510306.

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11

Noh, Joo Hyon, Pooran C. Joshi, Teja Kuruganti, and Philip D. Rack. "Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors." IEEE Journal of the Electron Devices Society 3, no. 3 (2015): 297–301. http://dx.doi.org/10.1109/jeds.2014.2376411.

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12

Testard, O. A. "Thermal contacts through mechanical moving parts in low thermal budget optical cryogenic assemblies." Cryogenics 27, no. 1 (1987): 20–22. http://dx.doi.org/10.1016/0011-2275(87)90100-7.

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13

Soubane, Driss, and Nathaniel J. Quitoriano. "Photoluminescence from low thermal budget silicon nano-crystals in silica." Nanotechnology 26, no. 29 (2015): 295201. http://dx.doi.org/10.1088/0957-4484/26/29/295201.

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14

Liu, Gang, and S. J. Fonash. "Low Thermal Budget Poly-Si Thin Film Transistors on Glass." Japanese Journal of Applied Physics 30, Part 2, No. 2B (1991): L269—L271. http://dx.doi.org/10.1143/jjap.30.l269.

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15

Fair, R. B. "Low-thermal-budget process modeling with the PREDICT computer program." IEEE Transactions on Electron Devices 35, no. 3 (1988): 285–93. http://dx.doi.org/10.1109/16.2452.

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16

Rajendran, Bipin, Rohit S. Shenoy, Daniel J. Witte, et al. "Low Thermal Budget Processing for Sequential 3-D IC Fabrication." IEEE Transactions on Electron Devices 54, no. 4 (2007): 707–14. http://dx.doi.org/10.1109/ted.2007.891300.

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17

Hsiao-Yi Lin, Chun-Yen Chang, Tan Fu Lei, et al. "Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors." IEEE Electron Device Letters 17, no. 11 (1996): 503–5. http://dx.doi.org/10.1109/55.541762.

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18

Song, Kay, Zia Karim, Xinxuan Tan, et al. "(Invited) Improvements in Thermal Budget and Film Properties Using Low Pressure Cure Technology for Advanced 3D Integration Packaging." ECS Meeting Abstracts MA2023-01, no. 29 (2023): 1788. http://dx.doi.org/10.1149/ma2023-01291788mtgabs.

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3D advanced integration with Fan-Out Wafer-Level Packaging (FOWLP) and Fan-Out Panel Level Packaging (FOPLP) offers multiple benefits: heterogenous chip design and stacking, increased interconnect density, and improved performance. However, it also brings new requirements for more compact form factors, low thermal budget materials and processing, and lower cost. The materials, process, and fabrication of heterogenous integration on redistribution layers (RDLs) consisting of metal and polymer dielectrics have become important enablers of the move to advanced packaging applications. To achieve t

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19

Mazzamuto, Fulvio, Zeinab Chehadi, Fabien Roze, et al. "Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing." Solid State Phenomena 359 (August 22, 2024): 21–28. http://dx.doi.org/10.4028/p-7t0wv7.

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This paper demonstrates for the first time a new annealing scheme to form p-type junctions in SiC by high temperature ion implantation followed by laser annealing without the use of a protective carbon capping layer. This novel approach leverages higher substrate temperatures during implant to minimize implant-induced defects during ion implantation, which enables the use of reduced thermal budget laser annealing for dopant activation. Laser annealing enables higher surface temperatures in the implanted layer than conventional annealing using a high temperature furnace. The shorter thermal bud

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20

Jurichich, Steve, Tsu-Jae King, Krishna Saraswat, and John Mehlhaff. "Low Thermal Budget Polycrystalline Silicon-Germanium Thin-Film Transistors Fabricated by Rapid Thermal Annealing." Japanese Journal of Applied Physics 33, Part 2, No. 8B (1994): L1139—L1141. http://dx.doi.org/10.1143/jjap.33.l1139.

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21

Lackner, Georg, Florent Domine, Daniel F. Nadeau, et al. "On the energy budget of a low-Arctic snowpack." Cryosphere 16, no. 1 (2022): 127–42. http://dx.doi.org/10.5194/tc-16-127-2022.

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Abstract. Arctic landscapes are covered in snow for at least 6 months of the year. The energy balance of the snow cover plays a key role in these environments, influencing the surface albedo, the thermal regime of the permafrost, and other factors. Our goal is to quantify all major heat fluxes above, within, and below a low-Arctic snowpack at a shrub tundra site on the east coast of Hudson Bay in eastern Canada. The study is based on observations from a flux tower that uses the eddy covariance approach and from profiles of temperature and thermal conductivity in the snow and soil. Additionally

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22

Serrazina, Ricardo, Alexander Tkach, Luis Pereira, Ana M. O. R. Senos, and Paula M. Vilarinho. "Flash Sintered Potassium Sodium Niobate: High-Performance Piezoelectric Ceramics at Low Thermal Budget Processing." Materials 15, no. 19 (2022): 6603. http://dx.doi.org/10.3390/ma15196603.

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Alternative sintering technologies promise to overcome issues associated with conventional ceramic sintering such as high thermal budgets and CO2 footprint. The sintering process becomes even more relevant for alkali-based piezoelectric ceramics such as K0.5Na0.5NbO3 (KNN) typically fired above 1100 °C for several hours that induces secondary phase formation and, thereby, degrades their electrical characteristics. Here, an ability of KNN ceramics to be of high performance is successfully demonstrated, using an electric field- and current-assisted Flash sintering technique at 900 °C only. Repor

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23

Kim, Hyo Jeong, Yonghwan An, Yong Chan Jung, et al. "Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications." physica status solidi (RRL) – Rapid Research Letters 15, no. 5 (2021): 2100028. http://dx.doi.org/10.1002/pssr.202100028.

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24

Kim, Hyo Jeong, Yonghwan An, Yong Chan Jung, et al. "Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications." physica status solidi (RRL) – Rapid Research Letters 15, no. 5 (2021): 2170020. http://dx.doi.org/10.1002/pssr.202170020.

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25

Celik, S. Muhsin, and Mehmet C. Öztürk. "Low Thermal Budget In Situ Surface Cleaning for Selective Silicon Epitaxy." Journal of The Electrochemical Society 145, no. 10 (1998): 3602–9. http://dx.doi.org/10.1149/1.1838849.

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26

Osmond, J., G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Känel. "Ultralow dark current Ge/Si(100) photodiodes with low thermal budget." Applied Physics Letters 94, no. 20 (2009): 201106. http://dx.doi.org/10.1063/1.3125252.

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27

P, Ashok, Yogesh Singh Chauhan, and Amit Verma. "Vanadium dioxide thin films synthesized using low thermal budget atmospheric oxidation." Thin Solid Films 706 (July 2020): 138003. http://dx.doi.org/10.1016/j.tsf.2020.138003.

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28

Osburn, C. M. "Formation of silicided, ultra-shallow junctions using low thermal budget processing." Journal of Electronic Materials 19, no. 1 (1990): 67–88. http://dx.doi.org/10.1007/bf02655553.

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29

Inoue, N., T. Nakura, and Y. Hayashi. "Low thermal-budget process of sputtered-PZT capacitor over multilevel metallization." IEEE Transactions on Electron Devices 50, no. 10 (2003): 2081–87. http://dx.doi.org/10.1109/ted.2003.816548.

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30

Chang, Wen Hsin, Hsien-Wen Wan, Yi-Ting Cheng, et al. "Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure." Japanese Journal of Applied Physics 61, SC (2022): SC1024. http://dx.doi.org/10.35848/1347-4065/ac3fca.

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Abstract Germanium-on-insulator (GeOI) structures with a surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material characteristics and transport properties of the Ge(111)OI structure have been systematically investigated through secondary-ion mass spectrometry, Raman spectroscopy, X-ray diffraction, high-resolution transmission electron microscope, and Hall measurement. The transferred Ge (111) layer remained almost intact from the as-grown epitaxial layers, indicating th

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31

Hieronymus, Magnus, and Jeffrey R. Carpenter. "Energy and Variance Budgets of a Diffusive Staircase with Implications for Heat Flux Scaling." Journal of Physical Oceanography 46, no. 8 (2016): 2553–69. http://dx.doi.org/10.1175/jpo-d-15-0155.1.

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AbstractThe steady-state energy and thermal variance budgets form the basis for most current methods for evaluating turbulent fluxes of buoyancy, heat, and salinity. This study derives these budgets for a double-diffusive staircase and quantifies them using direct numerical simulations; 10 runs with different Rayleigh numbers are considered. The energy budget is found to be well approximated by a simple three-term balance, while the thermal variance budget consists of only two terms. The two budgets are also combined to give an expression for the ratio of the heat and salt fluxes. The heat flu

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32

Huet, Karim, Toshiyuki Tabata, Joris Aubin, et al. "(Invited) Laser Thermal Annealing for Low Thermal Budget Applications: From Contact Formation to Material Modification." ECS Transactions 89, no. 3 (2019): 137–53. http://dx.doi.org/10.1149/08903.0137ecst.

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33

Ding, Dong, Yunya Zhang, Wei Wu, Dongchang Chen, Meilin Liu, and Ting He. "A novel low-thermal-budget approach for the co-production of ethylene and hydrogen via the electrochemical non-oxidative deprotonation of ethane." Energy & Environmental Science 11, no. 7 (2018): 1710–16. http://dx.doi.org/10.1039/c8ee00645h.

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34

Cha, Jun‐Hwe, Dong‐Ha Kim, Cheolmin Park, et al. "Low‐Thermal‐Budget Doping: Low‐Thermal‐Budget Doping of 2D Materials in Ambient Air Exemplified by Synthesis of Boron‐Doped Reduced Graphene Oxide (Adv. Sci. 7/2020)." Advanced Science 7, no. 7 (2020): 2070039. http://dx.doi.org/10.1002/advs.202070039.

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35

Jao, Meng-Huan, Chien-Chen Cheng, Chun-Fu Lu, Kai-Chi Hsiao, and Wei-Fang Su. "Low temperature and rapid formation of high quality metal oxide thin film via a hydroxide-assisted energy conservation strategy." Journal of Materials Chemistry C 6, no. 37 (2018): 9941–49. http://dx.doi.org/10.1039/c8tc03544j.

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36

Lucovsky, Gerald, David R. Lee, Sunil V. Hattangady, et al. "Monolayer Nitrogen-Atom Distributions in Ultrathin Gate Dielectrics by Low-Temperature Low-Thermal-Budget Processing." Japanese Journal of Applied Physics 34, Part 1, No. 12B (1995): 6827–37. http://dx.doi.org/10.1143/jjap.34.6827.

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37

Prowse, T. D., and P. Marsh. "Thermal budget of river ice covers during breakup." Canadian Journal of Civil Engineering 16, no. 1 (1989): 62–71. http://dx.doi.org/10.1139/l89-008.

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The magnitude and relative importance of atmosheric (air–ice) and hydrothermal (water–ice) heat fluxes to intact and fragmented river ice covers are studied for the case of a thermal breakup. Based on field measurements obtained from the Liard River, the atmospheric sources are shown to be dominant during the period of intact ice cover. Radiation was the primary heat source, but its effect was reduced by a granulation of the decaying columnar ice which increased the cover albedo to that comparable for melting snow. The hydrothermal heat input, even with frazil ice entrained within the flow, wa

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38

Saha, S. K., R. S. Howell, and M. K. Hatalis. "Silicidation reactions with Co–Ni bilayers for low thermal budget microelectronic applications." Thin Solid Films 347, no. 1-2 (1999): 278–83. http://dx.doi.org/10.1016/s0040-6090(99)00013-9.

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39

Lim, D. G., B. S. Jang, S. I. Moon, C. Y. Won, and J. Yi. "Characteristics of LiNbO3 memory capacitors fabricated using a low thermal budget process." Solid-State Electronics 45, no. 7 (2001): 1159–63. http://dx.doi.org/10.1016/s0038-1101(01)00042-9.

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40

Rappich, J. "Anodic oxidation as a low thermal budget process for passivation of SiGe." Solid-State Electronics 45, no. 8 (2001): 1465–70. http://dx.doi.org/10.1016/s0038-1101(01)00056-9.

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41

Chou, Tzu-Ting, Rui-Wen Song, Hao Chen, and Jenq-Gong Duh. "Low thermal budget bonding for 3D-package by collapse-free hybrid solder." Materials Chemistry and Physics 238 (December 2019): 121887. http://dx.doi.org/10.1016/j.matchemphys.2019.121887.

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42

Brabant, Paul, Jianqing Wen, Joe Italiano, Trevan Landin, Nyles Cody, and Lee Haen. "Achieving a SiGe HBT epitaxial emitter with novel low thermal budget technique." Applied Surface Science 224, no. 1-4 (2004): 347–49. http://dx.doi.org/10.1016/j.apsusc.2003.08.105.

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43

Bietti, S., C. Somaschini, S. Sanguinetti, et al. "Low Thermal Budget Fabrication of III-V Quantum Nanostructures on Si Substrates." Journal of Physics: Conference Series 245 (September 1, 2010): 012078. http://dx.doi.org/10.1088/1742-6596/245/1/012078.

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44

Park, Jeewon, Wansu Jang, and Changhwan Shin. "Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate Device." Micromachines 12, no. 8 (2021): 886. http://dx.doi.org/10.3390/mi12080886.

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In this study, a gate-stack engineering technique is proposed as a means of improving the performance of a 28 nm low-power (LP) high-k/metal-gate (HK/MG) device. In detail, it was experimentally verified that HfSiO thin films can replace HfSiON congeners, where the latter are known to have a good thermal budget and/or electrical characteristics, to boost the device performance under a limited thermal budget. TiN engineering for the gate-stack in the 28 nm LP HK/MG device was used to suppress the gate leakage current. Using the proposed fabrication method, the on/off current ratio (Ion/Ioff) wa

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45

Qin, Shu. "High quality low thermal budget low cost SiO2 film fabricated by O2 plasma immersion ion implantation." Thin Solid Films 756 (August 2022): 139385. http://dx.doi.org/10.1016/j.tsf.2022.139385.

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46

KUUSK, Kalle, Targo KALAMEES, Siim LINK, Simo ILOMETS, and Alo MIKOLA. "CASE-STUDY ANALYSIS OF CONCRETE LARGE-PANEL APARTMENT BUILDING AT PRE- AND POST LOW-BUDGET ENERGY-RENOVATION." JOURNAL OF CIVIL ENGINEERING AND MANAGEMENT 23, no. 1 (2016): 67–75. http://dx.doi.org/10.3846/13923730.2014.975741.

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The paper presents a case study analysis of low-budget renovation of a typical concrete large-panel apartment building. Focus is on the measurements and analyses of energy consumption, indoor climate, CO2 concentration, air leakage rate, thermal transmittance of thermal bridges, and thermal transmittance of the building envelope before and after the renovation. Results indicate that the renovation project was generally successful, with delivered energy need decreasing by 40% and heating energy need decreasing by 50%. However, some key problems need to be solved to achieve full energy efficien

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47

Loo, Roger, Andriy Hikavyy, Frederik E. Leys, et al. "Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination." Solid State Phenomena 145-146 (January 2009): 177–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.177.

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Several device concepts have been further evaluated after the successful implementation of epitaxial Si, SiGe and/or Si:C layers. Most of the next device generations will put limitations on the thermal budget of the deposition processes without making concessions on the epitaxial layer quality. In this work we address the impact of ex-situ wet chemical cleans and in-situ pre-epi bake steps, which are required to obtain oxide free Si surfaces for epitaxial growth. The combination of defect measurements, Secondary Ion Mass Spectroscopy, photoluminescence, lifetime measurements, and electrical di

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48

Glück, M., J. Hersener, H. G. Umbach, J. Rappich, and J. Stein. "Implementation of Low Thermal Budget Techniques to Si and SiGe MOSFET Device Processing." Solid State Phenomena 57-58 (July 1997): 413–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.57-58.413.

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49

Liu, Y., L. M. Kyaw, M. K. Bera, et al. "Low Thermal Budget Au-Free Hf-Based Ohmic Contacts on InAlN/GaN Heterostructures." ECS Transactions 61, no. 4 (2014): 319–27. http://dx.doi.org/10.1149/06104.0319ecst.

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50

Anderson, Evan M., DeAnna M. Campbell, Leon N. Maurer, et al. "Low thermal budget high-k/metal surface gate for buried donor-based devices." Journal of Physics: Materials 3, no. 3 (2020): 035002. http://dx.doi.org/10.1088/2515-7639/ab953b.

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